CN101982875A - Packaging structure of N substrate diode half bridges with common anodes in TO-220 - Google Patents
Packaging structure of N substrate diode half bridges with common anodes in TO-220 Download PDFInfo
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- CN101982875A CN101982875A CN2010102694663A CN201010269466A CN101982875A CN 101982875 A CN101982875 A CN 101982875A CN 2010102694663 A CN2010102694663 A CN 2010102694663A CN 201010269466 A CN201010269466 A CN 201010269466A CN 101982875 A CN101982875 A CN 101982875A
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- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000000919 ceramic Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 24
- 238000005245 sintering Methods 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000011084 recovery Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 238000012856 packing Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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Abstract
The invention provides a packaging structure of N substrate diode half bridges with common anodes in TO-220, which is characterized by comprising an insulating heat conductive aluminium oxide ceramic substrate, wherein the right side of the aluminium oxide ceramic substrate is provided with two mutually independent metal layers; the opposite side of the aluminium oxide ceramic substrate is provided with at least a metal layer; the metal layers at the opposite side of the aluminium oxide ceramic substrate are connected with heating panels; the two metal layers at the right side of the aluminium oxide ceramic substrate are respectively connected with left leads and right leads; the N poles of two diodes are respectively connected on the left leads and the right leads and are two cathodes; and the P poles of the two diodes are respectively connected on the middle leads by aluminium wires and are common anodes. The packaging structure has simple process, low manufacturing difficulty and stable yield and reliability, ensures the diodes to have high effective heat release and is suitable for using the N substrate diodes to assemble the half-bridge devices with common anodes.
Description
Technical field
The present invention relates to a kind of encapsulating structure of common positive half-bridge in TO-220 that constitutes by N base material Schottky diode or fast recovery diode, belong to the encapsulating structure technical field of diode component.
Background technology
Along with new forms of energy and Switching Power Supply are popularized and extensive use day by day, need a large amount of high performance high-frequency high-power rectifying devices that use.And in electronic circuitry design, the rectifying device of TO-220 packing forms is used more extensive.For making full-wave rectification and full bridge rectifier economic the simplification rationally in design is used, need be with common the moon of TO-220 packing forms, positive half bridge rectifier part is formed jointly altogether, and both performances need in full accord.As shown in Figure 1, full bridge rectifier is constituted common cloudy half-bridge A and is total to positive half-bridge B by four rectifier diodes, and wherein said diode is Schottky diode or fast recovery diode.
The diode of high-frequency rectification device is based on the N base material at present, being packaged into common cloudy half-bridge device is conventional encapsulation, as Fig. 2, Fig. 3, shown in Figure 4, the encapsulating structure of cloudy half-bridge in TO-220 is as follows altogether: the reverse side of middle leads 12 is connected with heating panel 2, the N utmost point of two diodes 3 is separately fixed on the front of middle leads 12, as common cathode, the P utmost point of two diodes 3 by aluminum steel 4 respectively with being connected of left side lead-in wire 11 and right side lead-in wire 13, as two anodes.
But during with N base material diode package Cheng Gongyang half-bridge device, because of polarity needs upside-down mounting on the contrary, but because the frame of the N region electrode of N base material and P region electrode are at grade, can cause short circuit when the upside-down mounting eutectic welds, upside-down mounting is brave in the P district connects so can only fill up with the copper packing 5 less than P district area.As Fig. 5, Fig. 6, shown in Figure 7, the encapsulating structure of positive half-bridge in TO-220 is as follows altogether for tradition: the reverse side of middle leads 12 is connected with heating panel 2, the P utmost point of two diodes 3 connects a copper packing 5 respectively, the area of copper packing 5 is long-pending less than the P pole-face, two copper packings 5 all are fixed on the front of middle leads 12, as being total to anode, the N utmost point of two diodes 3 is connected with left side lead-in wire 11 and right side lead-in wire 13 respectively by brace 6, as two negative electrodes.This kind encapsulating structure technology is complicated, manufacture difficulty is big, yields and reliability instability, wherein yields can only reach 60%～85%, and because copper packing 5 is less with the contact area of middle leads 12, so the efficiently radiates heat amount of diode reduces greatly, compare with the common cloudy half-bridge device of same specification diode package, use electric current to reduce by 20～30%, cause using common sun after the same specification diode package, cloudy half-bridge device altogether, can not mate use because performance is inconsistent.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, a kind of N base material diode encapsulating structure of positive half-bridge in TO-220 altogether is provided.
Purpose of the present invention is achieved through the following technical solutions:
N base material diode is the encapsulating structure of positive half-bridge in TO-220 altogether, characteristics are: the aluminium oxide ceramic substrate that comprises an insulating heat-conductive, the front of described aluminium oxide ceramic substrate is provided with two separate metal levels, the reverse side of aluminium oxide ceramic substrate is provided with at least one metal level, the metal level of aluminium oxide ceramic substrate reverse side is connected with heating panel, two metal levels in aluminium oxide ceramic substrate front are connected with the right side lead-in wire with the left side lead-in wire respectively, the N utmost point of two diodes is connected on left side lead-in wire and the right side lead-in wire, be two negative electrodes, the P utmost point of two diodes is connected on the middle leads by aluminum steel respectively, for being total to anode.
Further, above-mentioned N base material diode is the encapsulating structure of positive half-bridge in TO-220 altogether, and wherein, described diode is Schottky diode or fast recovery diode.
Further, above-mentioned N base material diode is the encapsulating structure of positive half-bridge in TO-220 altogether, wherein, be connected by Sb5Pb92.5Ag2.5 scolder sintering between the metal level of described aluminium oxide ceramic substrate reverse side and the heating panel, all be connected between two metal levels in described aluminium oxide ceramic substrate front and left side lead-in wire and the right side lead-in wire by Sb5Pb92.5Ag2.5 scolder sintering.
Substantive distinguishing features and obvious improvement that technical solution of the present invention is outstanding are mainly reflected in:
1. after the common positive half-bridge of N base material diode adopts above-mentioned encapsulating structure, compare with the common cloudy half-bridge of the N base material diode package of using same attribute, same specification, realized that electrical property, yields, reliability are in full accord, thus the difficult problem that device is selected for use when having solved the high frequency bridge rectifier design of back road;
2. simple, the enforcement easily of technology, yields is up to more than 99%;
3. after the common positive half-bridge of N base material diode adopts above-mentioned encapsulating structure, the diode specification that cloudy together half-bridge uses is identical, thereby make easy enforcement of diode manufacturing process and simple and reliable process, high conformity, product qualified rate height, cost low, the mixed economy cost can reduce about 50%.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1 is the schematic diagram of full bridge rectifier in the background technology;
Fig. 2 is the main TV structure schematic diagram that is total to the encapsulating structure of cloudy half-bridge in TO-220 in the background technology;
Fig. 3 is the left TV structure schematic diagram of Fig. 2;
Fig. 4 is the contour structures schematic diagram that is total to the encapsulating structure of cloudy half-bridge in TO-220 in the background technology;
Fig. 5 is the main TV structure schematic diagram that tradition is total to the encapsulating structure of positive half-bridge in TO-220 in the background technology;
Fig. 6 is the left TV structure schematic diagram of Fig. 5;
Fig. 7 is the contour structures schematic diagram that tradition is total to the encapsulating structure of positive half-bridge in TO-220 in the background technology;
Fig. 8 is the N base material diode of the present invention decomposition texture schematic diagram of the encapsulating structure of positive half-bridge in TO-220 altogether;
Fig. 9 is the N base material diode of the present invention package assembly schematic diagram of the encapsulating structure of positive half-bridge in TO-220 altogether;
Figure 10 is the left TV structure schematic diagram of Fig. 9;
Figure 11 is the N base material diode of the present invention contour structures schematic diagram of the encapsulating structure of positive half-bridge in TO-220 altogether.
The implication of each Reference numeral sees the following form among the figure:
Embodiment
As Fig. 8, Fig. 9, Figure 10, shown in Figure 11, N base material diode is the encapsulating structure of positive half-bridge in TO-220 altogether, the aluminium oxide ceramic substrate 1 that comprises an insulating heat-conductive, the obverse and reverse of aluminium oxide ceramic substrate 1 is provided with two separate metal levels, when using aluminium oxide ceramic substrate 1, do not need painstakingly to distinguish positive and negative thereby can make, aluminium oxide ceramic substrate 1 plays insulation, the effect of heat conduction, two metal levels of aluminium oxide ceramic substrate 1 reverse side are connected with heating panel 2 sintering by the Sb5Pb92.5Ag2.5 scolder, two metal levels in aluminium oxide ceramic substrate 1 front are connected by Sb5Pb92.5Ag2.5 scolder and left side lead-in wire 11 and right side 13 sintering that go between respectively, two Schottky diodes 3 are by conventional auto loading machine automatic bonding die on lead-in wire, wherein the N utmost point of two Schottky diodes 3 is connected on left side lead-in wire 11 and the right side lead-in wire 13, as two negative electrodes, the P utmost point of two Schottky diodes 3 is connected on the middle leads 12 by aluminum steel 4 respectively, as being total to anode, heating panel 2 and lead-in wire are the electrolysis copper material.
When concrete encapsulation was made, the packaging technology flow process was as follows:
1) on footing reverse side that goes between and heating panel 2, puts the Sb5Pb92.5Ag2.5 scolder;
2) respectively heating panel 2, aluminium oxide ceramic substrate 1, lead-in wire are assembled in the frock mould successively, wherein aluminium oxide ceramic substrate 1 is between heating panel 2 and lead-in wire;
3) the frock mould after assembling is finished is sent into the chain-type sintering furnace sintering that meets Sb5Pb92.5Ag2.5 solder temperature curve, takes out then;
4) the N utmost point with two diodes 3 passes through conventional auto loading machine automatic bonding die on the front of left side lead-in wire 11 and right side lead-in wire 13, the P utmost point with two diodes 3 is connected on the middle leads 12 by aluminum steel 4 respectively then, last plastic packaging, zinc-plated, gradation, test, check, packing, warehouse-in.
In sum, the invention provides that a kind of technology is simple, manufacture difficulty is low, yields and reliability be stable, and the efficiently radiates heat amount height of diode can mate the N base material diode that uses with the common cloudy half-bridge device of using the same specification diode package and be total to the encapsulating structure of positive half-bridge in TO-220.After the common positive half-bridge of N base material diode adopts above-mentioned encapsulating structure, compare with the common cloudy half-bridge of the N base material diode package of using same attribute, same specification, realized that electrical property, yields, reliability are in full accord, thus the difficult problem that device is selected for use when having solved the high frequency bridge rectifier design of back road.Simple, the easy enforcement of technology, yields are up to more than 99%.After the common positive half-bridge of N base material diode adopts above-mentioned encapsulating structure, the diode specification that cloudy together half-bridge uses is identical, thereby make easy enforcement of diode manufacturing process and simple and reliable process, high conformity, product qualified rate height, cost low, the mixed economy cost can reduce about 50%.
What need understand is: the above only is a preferred implementation of the present invention; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1.N the base material diode is the encapsulating structure of positive half-bridge in TO-220 altogether, it is characterized in that: the aluminium oxide ceramic substrate that comprises an insulating heat-conductive, the front of described aluminium oxide ceramic substrate is provided with two separate metal levels, the reverse side of aluminium oxide ceramic substrate is provided with at least one metal level, the metal level of aluminium oxide ceramic substrate reverse side is connected with heating panel, two metal levels in aluminium oxide ceramic substrate front are connected with the right side lead-in wire with the left side lead-in wire respectively, the N utmost point of two diodes is connected on left side lead-in wire and the right side lead-in wire, be two negative electrodes, the P utmost point of two diodes is connected on the middle leads by aluminum steel respectively, for being total to anode.
2. N base material diode according to claim 1 is the encapsulating structure of positive half-bridge in TO-220 altogether, and it is characterized in that: described diode is Schottky diode or fast recovery diode.
3. N base material diode according to claim 1 is the encapsulating structure of positive half-bridge in TO-220 altogether, it is characterized in that: be connected by Sb5Pb92.5Ag2.5 scolder sintering between the metal level of described aluminium oxide ceramic substrate reverse side and the heating panel, all be connected between two metal levels in described aluminium oxide ceramic substrate front and left side lead-in wire and the right side lead-in wire by Sb5Pb92.5Ag2.5 scolder sintering.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102694663A CN101982875B (en) | 2010-09-02 | 2010-09-02 | Packaging structure of N substrate diode half bridges with common anodes in TO-220 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102694663A CN101982875B (en) | 2010-09-02 | 2010-09-02 | Packaging structure of N substrate diode half bridges with common anodes in TO-220 |
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| Publication Number | Publication Date |
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| CN101982875A true CN101982875A (en) | 2011-03-02 |
| CN101982875B CN101982875B (en) | 2013-02-27 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609483A (en) * | 2016-01-04 | 2016-05-25 | 重庆平伟实业股份有限公司 | Package process of common-anode Schottky semiconductor |
| CN107425079A (en) * | 2017-09-15 | 2017-12-01 | 捷捷半导体有限公司 | A kind of common-anode rectifying half bridge chip and preparation method thereof |
| CN112713094A (en) * | 2020-12-30 | 2021-04-27 | 无锡格能微电子有限公司 | Common anode TO packaging process method |
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| US20020004251A1 (en) * | 1999-03-15 | 2002-01-10 | Roberts John K. | Method of making a semiconductor radiation emitter package |
| US7202557B2 (en) * | 2002-09-04 | 2007-04-10 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
| CN201392836Y (en) * | 2009-03-25 | 2010-01-27 | 沈富德 | Flatly packaged half-control bridge arm device |
| CN101815395A (en) * | 2010-01-01 | 2010-08-25 | 绍兴科盛电子有限公司 | Trigger module applied to electronic ballast |
| CN201845767U (en) * | 2010-09-02 | 2011-05-25 | 徐永才 | Novel encapsulating structure of N-base diode anode-connected half-bridge in TO-220 |
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2010
- 2010-09-02 CN CN2010102694663A patent/CN101982875B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020004251A1 (en) * | 1999-03-15 | 2002-01-10 | Roberts John K. | Method of making a semiconductor radiation emitter package |
| US7202557B2 (en) * | 2002-09-04 | 2007-04-10 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
| CN201392836Y (en) * | 2009-03-25 | 2010-01-27 | 沈富德 | Flatly packaged half-control bridge arm device |
| CN101815395A (en) * | 2010-01-01 | 2010-08-25 | 绍兴科盛电子有限公司 | Trigger module applied to electronic ballast |
| CN201845767U (en) * | 2010-09-02 | 2011-05-25 | 徐永才 | Novel encapsulating structure of N-base diode anode-connected half-bridge in TO-220 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609483A (en) * | 2016-01-04 | 2016-05-25 | 重庆平伟实业股份有限公司 | Package process of common-anode Schottky semiconductor |
| CN105609483B (en) * | 2016-01-04 | 2018-08-21 | 重庆平伟实业股份有限公司 | The packaging technology of common-anode Schottky semiconductor |
| CN107425079A (en) * | 2017-09-15 | 2017-12-01 | 捷捷半导体有限公司 | A kind of common-anode rectifying half bridge chip and preparation method thereof |
| CN107425079B (en) * | 2017-09-15 | 2023-04-28 | 捷捷半导体有限公司 | Common-anode rectifying half-bridge chip and preparation method thereof |
| CN112713094A (en) * | 2020-12-30 | 2021-04-27 | 无锡格能微电子有限公司 | Common anode TO packaging process method |
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| Publication number | Publication date |
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| CN101982875B (en) | 2013-02-27 |
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