CN109727938A - Rectifying bridge type semiconductor devices - Google Patents
Rectifying bridge type semiconductor devices Download PDFInfo
- Publication number
- CN109727938A CN109727938A CN201711060290.9A CN201711060290A CN109727938A CN 109727938 A CN109727938 A CN 109727938A CN 201711060290 A CN201711060290 A CN 201711060290A CN 109727938 A CN109727938 A CN 109727938A
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- Prior art keywords
- shape
- input pin
- pin
- wafer support
- support area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000004593 Epoxy Substances 0.000 claims abstract description 19
- 238000005452 bending Methods 0.000 claims abstract description 18
- 238000005253 cladding Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 239000003292 glue Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 239000000047 product Substances 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8534—Bonding interfaces of the connector
- H01L2224/85345—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Rectifiers (AREA)
Abstract
The present invention discloses a kind of rectifying bridge type semiconductor devices, including the first, second, third, fourth diode chip for backlight unit and the first Z-shaped input pin, the second Z-shaped input pin, L shape anode input pin and the L shape cathode output pin that expose epoxy packages body；The L shape anode input pin and L shape cathode output pin are made of wafer support area, direct current output lead portion and the second bending part between wafer support area, direct current output lead portion, the L shape anode input pin and the shape cathode output pin respective wafer support area L intermediate region are provided with first through hole, and respectively wafer support area close to the side of direct current output lead portion is provided with the second through-hole for the L shape anode input pin and L shape cathode output pin；Two sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet.The present invention reduces structural stress and reduces effect of the epoxy injecting glue in the process to internal structural impact power, improves the reliability of device.
Description
Technical field
The present invention relates to a kind of rectified semiconductor device more particularly to a kind of rectifying bridge type semiconductor devices.
Background technique
The bridge architecture that rectifier bridge device is made of four rectifier diodes, it utilizes the unilateal conduction of diode
Characteristic rectifies alternating current, since bridge rectifier doubles to the utilization efficiency for inputting positive sine wave than wave rectification, is
One kind of diode halfwave rectifier is significantly improved, therefore is widely used in alternating current and is converted into the circuit of direct current.
Existing rectifier bridge device architecture is limited by space layout, cannot encapsulate the larger sized chip of 60mil or more, can not
Meets the needs of end product miniaturization, product structure stress is larger, is not suitable for encapsulation 60mil or more large size chip, product
Thickness is logical big, is not able to satisfy the demand of end product compact designed, the production technology precision determined by product structure is not high.
Summary of the invention
It is an object of the present invention to provide a kind of rectifying bridge type semiconductor devices, which reduces structure and answers
Power and the effect during epoxy injecting glue to internal structural impact power is reduced, improves the reliability of device.
In order to achieve the above objectives, the technical solution adopted by the present invention is that: a kind of rectifying bridge type semiconductor devices, comprising: by
First, second, third, fourth diode chip for backlight unit of epoxy packages body cladding and the first Z-shaped input for exposing epoxy packages body
Pin, the second Z-shaped input pin, L shape anode input pin and L shape cathode output pin；
The respective anode of first, second diode chip for backlight unit is electrically connected with L shape anode input pin upper surface, third, the four or two pole
The respective cathode of tube chip is electrically connected with L shape cathode output pin upper surface, the cathode of first diode chip, the 4th diode
The anode of chip is electrically connected by the first connection sheet with the first Z-shaped input pin, the cathode of the second diode chip for backlight unit, the three or two
The anode of pole pipe chip is electrically connected by the second connection sheet with the second Z-shaped input pin；
The L shape anode input pin and L shape cathode output pin by wafer support area, direct current output lead portion and are located at core
The second bending part composition between piece Support, direct current output lead portion；
Two sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet, and the L shape anode is defeated
Enter and is provided with one first notch section on the outside of pin and the respective wafer support area of L shape cathode output pin, the L shape anode input
Pin and the shape cathode output pin respective wafer support area L middle two sides are provided with one second notch section；
The L shape anode input pin and the shape cathode output pin respective wafer support area L intermediate region are provided with first through hole,
The L shape anode input pin and L shape cathode output pin are respectively opened in wafer support area close to the side of direct current output lead portion
There is the second through-hole.
Further improved scheme is as follows in above-mentioned technical proposal:
1. in above scheme, the first Z-shaped input pin, the second Z-shaped input pin are by horizontal connection portion, horizontal input
Lead portion and the first bending part composition between horizontal connection portion, horizontal input pin portion.
2. in above scheme, the angle degree of the direct current output lead portion and the second bending part is 110 ° ~ 150 °.
3. in above scheme, the angle degree of the horizontal connection portion and the first bending part is 110 ° ~ 150 °.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
1. rectifying bridge type semiconductor devices of the present invention, L shape anode input pin and the respective chip of L shape cathode output pin
Support intermediate region is provided with first through hole, the respective wafer support area of the L shape anode input pin and L shape cathode output pin
Side close to direct current output lead portion is provided with the second through-hole, reduces structural stress and reduces internal during epoxy injecting glue
The effect of portion's structural impact power, improves the reliability of device；Secondly, its first connection sheet, the respective center of the second connection sheet
Place two sides are provided with one first semicircle orifice, the L shape anode input pin and the respective wafer support area of L shape cathode output pin
Outside is provided with one first notch section, in the L shape anode input pin and the respective wafer support area of L shape cathode output pin
Between two sides be provided with one second notch section, increase external pin area and increase the effect of body edges epoxy intensity, increase
The intensity of edge epoxy and reduces structural stress and reduce the effect during epoxy injecting glue to internal structural impact power.
2. rectifying bridge type semiconductor devices of the present invention is realized outside smaller product by the product structure of optimization
The design requirement of more large chip size is encapsulated in shape size, maximum chip size increases to 88mil by 60mil, solves big ruler
Very little chip bring structural stress problem, realizes product thickness and is reduced in size to original 40% or so, process efficiency improves
1 times or more.
Detailed description of the invention
Attached drawing 1 is rectifying bridge type semiconductor device structure schematic diagram of the present invention；
Attached drawing 2 is the schematic diagram of the section structure of attached drawing 1.
In the figures above: 1, epoxy packages body；2, first diode chip；3, the second diode chip for backlight unit；4, the three or two pole
Tube chip；5, the 4th diode chip for backlight unit；6, the first Z-shaped input pin；7, the second Z-shaped input pin；8, L shape anode input is drawn
Foot；9, L shape cathode output pin；101, horizontal connection portion；102, horizontal input pin portion；103, the first bending part；111, core
Piece Support；112, direct current output lead portion；113, the second bending part；12, first through hole；13, the second through-hole；14, first connects
Contact pin；15, the second connection sheet；16, the first semicircle orifice；17, the first notch section；18, the second notch section.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and embodiments:
A kind of embodiment 1: rectifying bridge type semiconductor devices, comprising: first, second, third, coated by epoxy packages body 1
Four diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin 7, L shape for exposing epoxy packages body 1
Positive input pin 8 and L shape cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L shape anode input pin, third, the 4th
Diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L shape cathode output pin, the cathode of first diode chip 2,
The anode of 4th diode chip for backlight unit 5 is electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode core
The cathode of piece 2, the anode of third diode chip for backlight unit 5 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L shape anode input pin 8 and L shape cathode output pin 9 are by wafer support area 111, direct current output lead portion 112
And the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Two sides are provided with one first semicircle orifice 16, the L shape at first connection sheet 14, the respective center of the second connection sheet 15
Positive input pin 8 and respective 111 outside of wafer support area of L shape cathode output pin 9 are provided with one first notch section 17, institute
It states L shape anode input pin 8 and the respective 111 middle two sides of wafer support area of L shape cathode output pin 9 is provided with one second
Notch section 18；
The L shape anode input pin 8 and respective 111 intermediate region of wafer support area of L shape cathode output pin 9 are provided with first
Through-hole 12, the L shape anode input pin 8 and the respective wafer support area 111 of L shape cathode output pin 9 draw close to direct current output
The side of foot 112 is provided with the second through-hole 13.
Above-mentioned first Z-shaped input pin 6, the second Z-shaped input pin 7 are by horizontal connection portion 101, horizontal input pin portion
102 and between horizontal connection portion 101, horizontal input pin portion 102 the first bending part 103 composition.
The angle degree of above-mentioned direct current output lead portion 112 and the second bending part 113 is 130 °.
The angle degree of above-mentioned horizontal connection portion 101 and the first bending part 103 is 130 °.
A kind of embodiment 2: rectifying bridge type semiconductor devices, comprising: first, second, coated by epoxy packages body 1
Three, the 4th diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin of epoxy packages body 1 are exposed
7, L shape anode input pin 8 and L shape cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L shape anode input pin, third, the 4th
Diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L shape cathode output pin, the cathode of first diode chip 2,
The anode of 4th diode chip for backlight unit 5 is electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode core
The cathode of piece 2, the anode of third diode chip for backlight unit 5 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L shape anode input pin 8 and L shape cathode output pin 9 are by wafer support area 111, direct current output lead portion 112
And the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Two sides are provided with one first semicircle orifice 16, the L shape at first connection sheet 14, the respective center of the second connection sheet 15
Positive input pin 8 and respective 111 outside of wafer support area of L shape cathode output pin 9 are provided with one first notch section 17, institute
It states L shape anode input pin 8 and the respective 111 middle two sides of wafer support area of L shape cathode output pin 9 is provided with one second
Notch section 18；
The L shape anode input pin 8 and respective 111 intermediate region of wafer support area of L shape cathode output pin 9 are provided with first
Through-hole 12, the L shape anode input pin 8 and the respective wafer support area 111 of L shape cathode output pin 9 draw close to direct current output
The side of foot 112 is provided with the second through-hole 13.
The angle degree of above-mentioned direct current output lead portion 112 and the second bending part 113 is 115 °.
The angle degree of above-mentioned horizontal connection portion 101 and the first bending part 103 is 115 °.
When using above-mentioned rectifying bridge type semiconductor devices, reduces structural stress and reduce internal during epoxy injecting glue
The effect of portion's structural impact power, improves the reliability of device；Secondly, it increases external pin area and increases body edges ring
The effect of oxygen intensity increases the intensity of edge epoxy and reduces structural stress and reduce epoxy injecting glue in the process to internal structure
The effect of impact force；Again, it by the product structure of optimization, realizes and encapsulates bigger core in smaller product outline size
The design requirement of chip size, maximum chip size increase to 88mil by 60mil, solve large size chip bring structure and answer
Power problem realizes product thickness and is reduced in size to original 40% or so, and process efficiency improves 1 times or more.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (4)
1. a kind of rectifying bridge type semiconductor devices, it is characterised in that: include: by epoxy packages body (1) cladding first, second,
Third, the 4th diode chip for backlight unit (2,3,4,5) and expose the first Z-shaped input pin (6) of epoxy packages body (1), second Z-shaped
Input pin (7), L shape anode input pin (8) and L shape cathode output pin (9)；
The respective anode of first, second diode chip for backlight unit (2,3) is electrically connected with L shape anode input pin (8) upper surface, third,
4th diode chip for backlight unit (4,5) respective cathode is electrically connected with L shape cathode output pin (9) upper surface, first diode chip
(2) anode of cathode, the 4th diode chip for backlight unit (5) is electrically connected by the first connection sheet (14) with the first Z-shaped input pin (6)
It connects, the cathode of the second diode chip for backlight unit (2), the anode of third diode chip for backlight unit (5) pass through the second connection sheet (15) and the 2nd Z
Shape input pin (7) electrical connection；
The L shape anode input pin (8) and L shape cathode output pin (9) are drawn by wafer support area (111), direct current output
Foot (112) and the second bending part (113) composition between wafer support area (111), direct current output lead portion (112)；
Two sides are provided with one first semicircle orifice (16) at first connection sheet (14), the second connection sheet (15) respective center,
One the is provided on the outside of the L shape anode input pin (8) and the respective wafer support area (111) of L shape cathode output pin (9)
One notch section (17), the L shape anode input pin (8) and the respective wafer support area (111) of L shape cathode output pin (9)
Middle two sides are provided with one second notch section (18)；
The L shape anode input pin (8) and respective wafer support area (111) intermediate region of L shape cathode output pin (9) are opened
Have first through hole (12), the L shape anode input pin (8) and the respective wafer support area (111) of L shape cathode output pin (9)
Side close to direct current output lead portion (112) is provided with the second through-hole (13).
2. rectifying bridge type semiconductor devices according to claim 1, it is characterised in that: the first Z-shaped input pin
(6), the second Z-shaped input pin (7) by horizontal connection portion (101), horizontal input pin portion (102) and is located at horizontal connection portion
(101), the first bending part (103) composition between horizontal input pin portion (102).
3. rectifying bridge type semiconductor devices according to claim 1, it is characterised in that: the direct current output lead portion
It (112) is 110 ° ~ 150 ° with the angle degree of the second bending part (113).
4. rectifying bridge type semiconductor devices according to claim 2, it is characterised in that: the horizontal connection portion (101) with
The angle degree of first bending part (103) is 110 ° ~ 150 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711060290.9A CN109727938A (en) | 2017-10-31 | 2017-10-31 | Rectifying bridge type semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711060290.9A CN109727938A (en) | 2017-10-31 | 2017-10-31 | Rectifying bridge type semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109727938A true CN109727938A (en) | 2019-05-07 |
Family
ID=66294474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711060290.9A Pending CN109727938A (en) | 2017-10-31 | 2017-10-31 | Rectifying bridge type semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109727938A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050224925A1 (en) * | 2004-04-01 | 2005-10-13 | Peter Chou | Lead frame having a tilt flap for locking molding compound and semiconductor device having the same |
| US20080150102A1 (en) * | 2006-10-16 | 2008-06-26 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| CN102842572A (en) * | 2011-06-24 | 2012-12-26 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
| CN102931174A (en) * | 2012-10-30 | 2013-02-13 | 南通康比电子有限公司 | Miniature type surface mounting single-phase full-wave bridge rectifier and manufacturing method of rectifier |
| CN205140967U (en) * | 2015-12-04 | 2016-04-06 | 重庆平伟实业股份有限公司 | Rectifier bridge circuit pack body |
| CN207781590U (en) * | 2017-10-31 | 2018-08-28 | 苏州固锝电子股份有限公司 | High reliability compact rectifier bridge structure |
| CN207781586U (en) * | 2017-10-31 | 2018-08-28 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
-
2017
- 2017-10-31 CN CN201711060290.9A patent/CN109727938A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050224925A1 (en) * | 2004-04-01 | 2005-10-13 | Peter Chou | Lead frame having a tilt flap for locking molding compound and semiconductor device having the same |
| US20080150102A1 (en) * | 2006-10-16 | 2008-06-26 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| CN102842572A (en) * | 2011-06-24 | 2012-12-26 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
| CN102931174A (en) * | 2012-10-30 | 2013-02-13 | 南通康比电子有限公司 | Miniature type surface mounting single-phase full-wave bridge rectifier and manufacturing method of rectifier |
| CN205140967U (en) * | 2015-12-04 | 2016-04-06 | 重庆平伟实业股份有限公司 | Rectifier bridge circuit pack body |
| CN207781590U (en) * | 2017-10-31 | 2018-08-28 | 苏州固锝电子股份有限公司 | High reliability compact rectifier bridge structure |
| CN207781586U (en) * | 2017-10-31 | 2018-08-28 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
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