CN201523329U - Direct-plug type double diode small current rectification module - Google Patents
Direct-plug type double diode small current rectification module Download PDFInfo
- Publication number
- CN201523329U CN201523329U CN2009201986192U CN200920198619U CN201523329U CN 201523329 U CN201523329 U CN 201523329U CN 2009201986192 U CN2009201986192 U CN 2009201986192U CN 200920198619 U CN200920198619 U CN 200920198619U CN 201523329 U CN201523329 U CN 201523329U
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- chip
- diode chip
- semiconductor diode
- metal lead
- electrode terminal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The utility model discloses a direct-plug type double diode small current rectification module which comprises a plastic packaging body made of insulating materials, a metal lead-wire framework and a semi-conductor diode chip, wherein the semi-conductor diode chip is arranged in the plastic packaging body, and is arranged in the same plane, one portion of the metal lead-wire framework is arranged in the plastic packaging body, and one portion is arranged outside the plastic packaging body, the metal lead-wire framework comprises a plurality of units, each unit comprises 3 plane welding discs and corresponding 3 electrode terminals, one pole of the semi-conductor diode chip is paved and is connected on one or two welding discs in the metal lead-wire framework, the other pole and the other welding disc are connected, three electrode terminals are flatly extended out from the middle portion of the plastic packaging body, and are not bent, and meanwhile, the bottom ends of the three electrode terminals are arranged on the same plane. The direct-plug type double diode small current rectification module is not only suitable for the design of small electric current rectification circuit, but also is suitable for high-intensity and flexible installation.
Description
Technical field
The utility model relates to the little current commutates module of a kind of direct insertion double diode.
Background technology
The little electric current of present realization (≤1A) method of rectification generally is full-wave rectification and halfwave rectifier.Full-wave rectification is the highest to the utilance of power supply, so for first choice of using.The method that realizes full-wave rectification has: utilize four rectifier diodes to form full rectification circuit on pcb board and realize rectifying conversion.Because solder joint is many, circuit is complicated, is unfavorable for microminiaturization; Another kind method is to use a miniature single-phases full bridge rectifier directly to realize full-wave rectification.This method cost is higher, and lacks the flexibility of circuit design.The little current commutates module of the direct insertion double diode of the utility model is with the chip series aiding connection of two rectifier diodes, cloudy or sun connection altogether altogether, and adopts the packing forms of existing similar low-power transistor to draw three terminals, realize rectification function with this.Because two modules can realize full-wave rectification, so be also referred to as half-bridge.
Summary of the invention
The purpose of this utility model is to provide a kind of and is applicable to little current commutates circuit design and is suitable for the little current commutates module of direct insertion double diode that high density is installed flexibly.
For achieving the above object, the technical solution of the utility model is:
The little current commutates module of a kind of direct insertion double diode comprises plastic-sealed body, metal lead wire frame and the semiconductor diode chip made with insulating material, it is characterized in that described semiconductor diode chip is arranged at plastic-sealed body inside, and is in the same plane; A described metal lead wire frame part is arranged at plastic-sealed body inside, and a part is located at the plastic-sealed body outside, and this die-attach area comprises several unit, and each unit comprises 3 planar pads and corresponding 3 electrode terminals; The tiling of one utmost point of described semiconductor diode chip is provided with and is connected on the metal lead wire frame one of them or two pads, the setting that links to each other with the another one pad of another utmost point; Described three electrode terminals are straight from the middle part of described plastic-sealed body to be stretched out and not to do any bending, and the bottom of three electrode terminals is in the same plane simultaneously.
Further, the shape of planar pad can be any one in round platform, Fang Tai, rectangle, the rhombus.
Further, the semiconductor diode chip can be any one in the common rectification chip of glassivation, glassivation fast-recovery commutation chip, the inhibition of glassivation transient voltage diode chip for backlight unit, glassivation voltage stabilizing didoe chip or the Schottky rectification chip.
Further, the connected mode of semiconductor diode chip and described die-attach area can be one of following form:
A) cloudy altogether the connection: the negative electrode of two semiconductor diode chips is connected with same electrode terminal, and anode is connected with two other electrode terminal respectively;
B) sun connects altogether: the anode of two semiconductor diode chips is connected with same electrode terminal, and negative electrode is connected with two other electrode terminal respectively;
C) negative and positive connect: the negative electrode of the anode of a semiconductor diode chip and another semiconductor diode chip is connected with same electrode terminal, and another utmost point of semiconductor diode chip is connected with two other electrode terminal respectively.
The beneficial effects of the utility model are not to be only applicable to little current commutates circuit design, and are suitable for high density and install flexibly.
Description of drawings
Fig. 1 is the circuit diagram of the little current commutates module of a kind of direct insertion double diode of the utility model;
Fig. 2 is several profile schematic diagrames of the utility model embodiment;
Fig. 3 is several internal structure schematic diagrames of the utility model embodiment.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
With reference to figures 1 through accompanying drawing 3, a kind of preferred embodiment that this enforcement is novel, comprise the plastic-sealed body 1, metal lead wire frame 2,3 and semiconductor diode chip 5a, the 5b that make with insulating material, the part of metal lead wire frame 2,3 is arranged at plastic-sealed body 1 inside, a part is located at plastic-sealed body 1 outside, metal lead wire frame 2,3 comprises several unit, and each unit comprises 3 planar pads and corresponding 3 electrode terminals; These three electrode terminals are straight from the middle part of described plastic-sealed body 1 to be stretched out and not to do any bending, and the bottom of three electrode terminals is in the same plane simultaneously, and the shape of this planar pad can be any one in round platform, Fang Tai, rectangle, the rhombus.
In addition, semiconductor diode chip 5a, 5b are arranged among the described plastic-sealed body 1, and be in the same plane, the tiling of the utmost point of semiconductor diode chip 5a, 5b is provided with and is connected on the metal lead wire frame 2,3 one of them or two pads, the setting that links to each other with the another one pad of another utmost point; Semiconductor diode chip 5a, 5b can be any one in the common rectification chip of glassivation, glassivation fast-recovery commutation chip, the inhibition of glassivation transient voltage diode chip for backlight unit, glassivation voltage stabilizing didoe chip or the Schottky rectification chip.
The connected mode of semiconductor diode 5a, 5b chip and die- attach area 2,3 can be one of following form:
A) cloudy altogether the connection: the negative electrode of two semiconductor diode chip 5a, 5b is connected with same electrode terminal, and anode is connected with two other electrode terminal respectively;
B) sun connects altogether: the anode of two semiconductor diode chip 5a, 5b is connected with same electrode terminal, and negative electrode is connected with two other electrode terminal respectively;
C) negative and positive connect: the anode of semiconductor diode chip 5a, a 5b is connected with same electrode terminal with the negative electrode of another semiconductor diode chip 5a, 5b, and another utmost point of semiconductor diode chip 5a, 5b is connected with two other electrode terminal respectively.
Shown in Fig. 2, Fig. 3 (a), the little current commutates module of a kind of direct insertion double diode of the present utility model is by eutectic weldering or some glue soldering tech, the face of semiconductor chip 5a, 5b is connected with the pad of metal lead wire frame 3, utilize Wire Bonding Technology again, be connected with the pad of metal lead wire frame 2 by metal lead wire 4 another face semiconductor chip 5a, 5b, semiconductor chip 5a, 5b tiling is arranged on the pad of metal lead wire frame 3, links to each other with the pad of metal lead wire frame 2 by metal lead wire 4 again.
Claims (4)
1. the little current commutates module of direct insertion double diode comprises plastic-sealed body, metal lead wire frame and the semiconductor diode chip made with insulating material, it is characterized in that described semiconductor diode chip is arranged at plastic-sealed body inside, and is in the same plane; A described metal lead wire frame part is arranged at plastic-sealed body inside, and a part is located at the plastic-sealed body outside, and this die-attach area comprises several unit, and each unit comprises 3 planar pads and corresponding 3 electrode terminals; The tiling of one utmost point of described semiconductor diode chip is provided with and is connected on the metal lead wire frame one of them or two pads, the setting that links to each other with the another one pad of another utmost point; Described three electrode terminals are straight from the middle part of described plastic-sealed body to be stretched out and not to do any bending, and the bottom of three electrode terminals is in the same plane simultaneously.
2. according to the little current commutates module of the described direct insertion double diode of claim 1, the shape that it is characterized in that described planar pad can be any one in round platform, Fang Tai, rectangle, the rhombus.
3. according to the little current commutates module of the described direct insertion double diode of claim 1, it is characterized in that described semiconductor diode chip can be any one in the common rectification chip of glassivation, glassivation fast-recovery commutation chip, the inhibition of glassivation transient voltage diode chip for backlight unit, glassivation voltage stabilizing didoe chip or the Schottky rectification chip.
4. according to the little current commutates module of any described direct insertion double diode in the claim 1 to 3, it is characterized in that the connected mode of described semiconductor diode chip and described die-attach area can be one of following form:
A) cloudy altogether the connection: the negative electrode of two semiconductor diode chips is connected with same electrode terminal, and anode is connected with two other electrode terminal respectively;
B) sun connects altogether: the anode of two semiconductor diode chips is connected with same electrode terminal, and negative electrode is connected with two other electrode terminal respectively;
C) negative and positive connect: the negative electrode of the anode of a semiconductor diode chip and another semiconductor diode chip is connected with same electrode terminal, and another utmost point of semiconductor diode chip is connected with two other electrode terminal respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201986192U CN201523329U (en) | 2009-11-02 | 2009-11-02 | Direct-plug type double diode small current rectification module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201986192U CN201523329U (en) | 2009-11-02 | 2009-11-02 | Direct-plug type double diode small current rectification module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201523329U true CN201523329U (en) | 2010-07-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201986192U Expired - Fee Related CN201523329U (en) | 2009-11-02 | 2009-11-02 | Direct-plug type double diode small current rectification module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201523329U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101815395A (en) * | 2010-01-01 | 2010-08-25 | 绍兴科盛电子有限公司 | Trigger module applied to electronic ballast |
| CN102832205A (en) * | 2011-06-15 | 2012-12-19 | 上海金克半导体设备有限公司 | In-line small bridge rectifier |
| CN106252321A (en) * | 2016-09-12 | 2016-12-21 | 陈文彬 | Series diode integrating device |
| CN106298725A (en) * | 2016-09-23 | 2017-01-04 | 陈文彬 | The encapsulating structure of series diode |
| CN108278171A (en) * | 2018-03-26 | 2018-07-13 | 山东元齐新动力科技有限公司 | Motor start-up control device based on threephase generator |
-
2009
- 2009-11-02 CN CN2009201986192U patent/CN201523329U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101815395A (en) * | 2010-01-01 | 2010-08-25 | 绍兴科盛电子有限公司 | Trigger module applied to electronic ballast |
| CN102832205A (en) * | 2011-06-15 | 2012-12-19 | 上海金克半导体设备有限公司 | In-line small bridge rectifier |
| CN102832205B (en) * | 2011-06-15 | 2015-07-08 | 上海金克半导体设备有限公司 | In-line small bridge rectifier |
| CN106252321A (en) * | 2016-09-12 | 2016-12-21 | 陈文彬 | Series diode integrating device |
| CN106298725A (en) * | 2016-09-23 | 2017-01-04 | 陈文彬 | The encapsulating structure of series diode |
| CN108278171A (en) * | 2018-03-26 | 2018-07-13 | 山东元齐新动力科技有限公司 | Motor start-up control device based on threephase generator |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100707 Termination date: 20161102 |
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| CF01 | Termination of patent right due to non-payment of annual fee |