CN101916809A - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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CN101916809A
CN101916809A CN2010102267733A CN201010226773A CN101916809A CN 101916809 A CN101916809 A CN 101916809A CN 2010102267733 A CN2010102267733 A CN 2010102267733A CN 201010226773 A CN201010226773 A CN 201010226773A CN 101916809 A CN101916809 A CN 101916809A
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小早川正彦
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Rohm Co Ltd
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Abstract

一种半导体发光装置，包括：导线架、安装在焊接区的顶表面上的半导体发光元件，和覆盖导线架的一部分的壳体。焊接区的底表面露出到壳体的外部。导线架包括薄延伸部分，薄延伸部分从焊接区延伸，并且该薄延伸部分的顶表面与焊接区的顶表面齐平。薄延伸部分的底表面从焊接区的底表面向焊接区的顶表面偏移。

Description

半导体发光装置
本申请是2008年3月28日提交的标题为《半导体发光装置》的申请号为200810086912.X的申请的分案申请。
技术领域
本发明涉及一种设有半导体发光元件的半导体发光装置。
背景技术
图6和7示出了常规半导体发光装置的一个例子(例如，参见JP-A-2005-353914)。该示出的半导体发光装置X包括导线架91、LED芯片92、壳体93和透明树脂94。导线架91包括两个条状部分，即相对较长的部分91a和相对较短的部分91b，如图6所示。从图7可以看出，这两个部分具有相同的宽度，并以导线架91的底表面露出壳体93之外的方式装配到壳体93的下部空间中。LED芯片92作为半导体发光装置X的光源，并被焊接到导线架91的较长条状部分91a上。LED芯片92通过导线95连接到导线架91的较短条状部分91b。发光装置X例如可以安装到印刷电路板上。
为了从半导体发光装置X获得更强的光发射，需要对LED芯片92施加更大的电功率。不可避免地，由LED芯片92产生的热量增加，为了维持适当的光发射，应当将该热量从较长条状部分91a传导到电路板。一种促进热传导的方法是加宽与LED芯片92连接的条状部分91a(从而加宽导线架91)。
虽然较长条状部分91a的宽度被加大，但是壳体93的整个尺寸可以不变，以使发光装置X保持小型化。在此情况下，壳体93的侧壁需要被制得更薄，以允许较长条状部分91a的尺寸加大。然而，这种结构将削弱壳体93的框架夹持力，这可能使导线架91从壳体93脱落。
发明内容
本发明是鉴于上述情况而提出的，其目的在于提供一种小型的并能够发射亮光的半导体发光装置。
根据本发明，提供一种半导体发光装置，包括：导线架，其包括具有顶表面和底表面的焊接区；半导体发光元件，其安装在焊接区的顶表面上；以及壳体，其覆盖导线架的一部分。焊接区的底表面露出到壳体的外部。导线架包括从焊接区延伸并具有顶表面和底表面的薄延伸部分，薄延伸部分的顶表面与焊接区的顶表面齐平，而薄延伸部分的底表面从焊接区的底表面向焊接区的顶表面偏移。
优选地，本发明的半导体发光装置可以进一步包括：从焊接区延伸并具有顶表面和底表面的厚延伸部分。厚延伸部分被布置成靠近薄延伸部分且厚度与焊接区的厚度相同。厚延伸部分的底表面露出到壳体的外部。
参照附图阅读以下说明，将会清楚本发明的其它特征和优势。
附图说明
图1是表示根据本发明的半导体发光装置的主要部分的平面图。
图2是表示图1所示的半导体发光装置的底视图。
图3是沿图1中的III-III线的截面图。
图4是沿图1中的IV-IV线的截面图。
图5是沿图1中的V-V线的截面图。
图6是表示常规半导体发光装置的截面图。
图7是沿图6中的VII-VII线的截面图。
具体实施方式
下面参照附图对本发明的优选实施例进行描述。
图1-5示出了根据本发明的半导体发光装置。半导体发光装置A包括导线架1、发光二极管(LED)芯片2、壳体3和允许从LED芯片2发出的光通过的保护树脂4。发光装置A为长约4毫米、宽约1毫米、高约0.6毫米的小长方体。在图1中，为了方便说明，未示出保护树脂4。
导线架1由铜、镍或者包含铜和/或镍的合金制成。如图2所示，导线架1的底表面露出到壳体3之外，并且导线架1被分成较长的主要部分和较短的次要部分。该主要部分包括焊接区11、多个薄延伸部分12和多个厚延伸部分13。在图1中，焊接区11和延伸部分12、13之间的边界用双点虚线表示。
焊接区11为条状区域，LED芯片2安装到它的一部分上。每个薄延伸部分12从焊接区11中伸出，其厚度例如约为焊接区11厚度的一半。如图4所示，薄延伸部分12的顶表面与焊接区11的顶表面齐平。薄延伸部分12的底表面被设置成高于焊接区11的底表面，如图4中纵向所示(换句话说，薄延伸部分12的底表面从焊接区11的底表面向焊接区11的顶表面偏移)。薄延伸部分12的底表面被壳体3覆盖。
如图5所示，每个厚延伸部分13从焊接区11伸出，其厚度基本与焊接区11的厚度相同。厚延伸部分13的顶表面与焊接区11的顶表面齐平，厚延伸部分13的底表面(其与焊接区11的底表面齐平)露出到壳体3的外部。如图1和2所示，薄延伸部分12和厚延伸部分13在导线架1的横向交替地布置。
作为发光装置A的光源的LED芯片2被配置成发出预定波长的光。LED芯片2由诸如氮化镓(GaN)等的半导体材料制成，并通过电子和空穴在夹于n型半导体层和p型半导体层之间的活性层处的再结合而发出蓝光、绿光或红光。LED芯片2通过导线5连接到导线架1的较短部分。
壳体3例如由白树脂制成，并且通常为矩形框架。如图3-5所示，壳体3的内表面作为向下斜削的反射体3a。反射体3a向上反射从LED芯片2侧方发出的光。如图4所示，壳体3保持与薄延伸部分12以不易松开的方式啮合在一起。而且，如图2所示，壳体3与薄延伸部分12和厚延伸部分13相啮合。
保护树脂4由填充于由壳体3限定的空间中的例如透明树脂或透明环氧树脂制成。保护树脂4覆盖LED芯片2，同时保护LED芯片2。
接下来，下面将描述半导体发光装置A的功能。
如上所述，壳体3被保持为与薄延伸部分12以不易松开的方式接合。因此，导线架1被壳体3可靠地保持，以防止导线架1从壳体3中脱落。结果，尽管发光装置A具有非常小的宽度(约1毫米)，但是导线架1露出壳体3之外的面积较大，如图2所示。因此，热量能够有效地从LED芯片2传导到例如印刷电路板等，这有助于获得预期强度的光发射。
如上所述，薄延伸部分12和厚延伸部分13彼此交替地布置，厚延伸部分13的底表面露出到壳体3的外部，如图2所示。以这种方式，能够增加导线架1的露出面积。有利地，这便于将LED芯片2的热量散逸出去。

Claims (21)

1.一种半导体发光装置，包括：
导线架，其包括焊接区；
半导体发光元件，其安装在所述焊接区；以及
壳体，其覆盖所述导线架的一部分，
其中所述焊接区露出到所述壳体的外部；
其中所述导线架包括从所述焊接区延伸的第一延伸部分，该第一延伸部分在厚度上小于所述焊接区；并且
其中所述导线架还包括从所述焊接区延伸的第二延伸部分，该第二延伸部分在厚度上大于所述第一延伸部分；
其中所述第二延伸部分露出到所述壳体的外部。
2.如权利要求1所述的半导体发光装置，其中所述导线架包括从所述焊接区延伸的多个第一延伸部分和从所述焊接区延伸的多个第二延伸部分，所述多个第一延伸部分与所述多个第二延伸部分交替地布置，所述壳体具有位于各第一延伸部分与相邻的一个第二延伸部分之间的部分。
3.如权利要求1所述的半导体发光装置，其中所述导线架还包括导线连接区，该导线连接区具有面对所述焊接区的边缘，所述导线连接区的所述边缘形成有附加的延伸部分，该附加的延伸部分在厚度上小于所述焊接区。
4.如权利要求1所述的半导体发光装置，其中所述导线架的所述焊接区为长形并且具有纵向边缘，多个第一延伸部分和多个第二延伸部分从所述纵向边缘突出。
5.如权利要求1所述的半导体发光装置，其中所述第二延伸部分具有与所述焊接区相同的厚度。
6.如权利要求1所述的半导体发光装置，其中所述导线架还包括经由导线连接到所述发光元件的导线连接区，该导线连接区比所述焊接区短。
7.如权利要求1所述的半导体发光装置，其中所述发光元件是LED。
8.如权利要求1所述的半导体发光装置，其中所述发光元件包括n型半导体层和p型半导体层。
9.如权利要求1所述的半导体发光装置，其中所述发光元件包括n型半导体层，p型半导体层，以及夹于所述n型半导体层和所述p型半导体层之间的活性层。
10.如权利要求1所述的半导体发光装置，其中所述发光元件发红光。
11.如权利要求1所述的半导体发光装置，其中所述发光元件发绿光。
12.如权利要求1所述的半导体发光装置，其中所述发光元件发蓝光。
13.如权利要求1所述的半导体发光装置，其中所述壳体具有斜削的内表面。
14.如权利要求1所述的半导体发光装置，其中所述壳体由白树脂制成。
15.如权利要求1所述的半导体发光装置，其中所述壳体填充有透明树脂。
16.如权利要求1所述的半导体发光装置，其中所述导线架具有形成有切口的外端。
17.如权利要求1所述的半导体发光装置，其中所述导线架为长形，所述发光元件基本上安装在所述导线架的纵向的中央。
18.如权利要求1所述的半导体发光装置，其中所述导线架为长形，所述发光元件基本上安装在所述导线架的宽度方向的中央。
19.如权利要求1所述的半导体发光装置，其中所述发光元件连接到导线，该导线具有与所述导线架的顶表面基本上平行地延伸的部分。
20.如权利要求1所述的半导体发光装置，其中所述壳体具有较宽的上部和较窄的下部。
21.如权利要求1所述的半导体发光装置，具有4mm的长度、1mm的宽度和0.6mm的高度。
CN2010102267733A 2007-03-30 2008-03-28 半导体发光装置 Active CN101916809B (zh)

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JP2007-092879 2007-03-30
JP2007092879A JP5122172B2 (ja) 2007-03-30 2007-03-30 半導体発光装置

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US8154045B2 (en) 2012-04-10
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US10008650B2 (en) 2018-06-26
US11784295B2 (en) 2023-10-10
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US11088307B2 (en) 2021-08-10
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US20210336113A1 (en) 2021-10-28
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US8680568B2 (en) 2014-03-25
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US20110042710A1 (en) 2011-02-24
US7825426B2 (en) 2010-11-02
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US9059387B2 (en) 2015-06-16
US20230420629A1 (en) 2023-12-28

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