CN101627440B - 通过使用不同的预充电启用电压而以减少的编程干扰对非易失性存储器进行编程 - Google Patents
通过使用不同的预充电启用电压而以减少的编程干扰对非易失性存储器进行编程 Download PDFInfo
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- CN101627440B CN101627440B CN2007800513231A CN200780051323A CN101627440B CN 101627440 B CN101627440 B CN 101627440B CN 2007800513231 A CN2007800513231 A CN 2007800513231A CN 200780051323 A CN200780051323 A CN 200780051323A CN 101627440 B CN101627440 B CN 101627440B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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Abstract
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Claims (19)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/618,600 US7450430B2 (en) | 2006-12-29 | 2006-12-29 | Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages |
US11/618,606 | 2006-12-29 | ||
US11/618,606 US7463531B2 (en) | 2006-12-29 | 2006-12-29 | Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages |
US11/618,600 | 2006-12-29 | ||
PCT/US2007/088947 WO2008083221A2 (en) | 2006-12-29 | 2007-12-27 | Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101627440A CN101627440A (zh) | 2010-01-13 |
CN101627440B true CN101627440B (zh) | 2012-11-14 |
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Application Number | Title | Priority Date | Filing Date |
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CN2007800513231A Active CN101627440B (zh) | 2006-12-29 | 2007-12-27 | 通过使用不同的预充电启用电压而以减少的编程干扰对非易失性存储器进行编程 |
Country Status (2)
Country | Link |
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US (1) | US7450430B2 (zh) |
CN (1) | CN101627440B (zh) |
Families Citing this family (47)
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US20080046630A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US20080046641A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
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KR100988121B1 (ko) * | 2007-11-21 | 2010-10-18 | 주식회사 하이닉스반도체 | 불휘발성 메모리소자의 프로그램 방법 |
JP4640658B2 (ja) * | 2008-02-15 | 2011-03-02 | マイクロン テクノロジー, インク. | マルチレベル抑制スキーム |
US7719902B2 (en) * | 2008-05-23 | 2010-05-18 | Sandisk Corporation | Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage |
US8316201B2 (en) | 2008-12-18 | 2012-11-20 | Sandisk Il Ltd. | Methods for executing a command to write data from a source location to a destination location in a memory device |
US7848146B2 (en) * | 2009-03-19 | 2010-12-07 | Spansion Llc | Partial local self-boosting of a memory cell channel |
US8169822B2 (en) | 2009-11-11 | 2012-05-01 | Sandisk Technologies Inc. | Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory |
US8595411B2 (en) * | 2009-12-30 | 2013-11-26 | Sandisk Technologies Inc. | Method and controller for performing a sequence of commands |
US8443263B2 (en) | 2009-12-30 | 2013-05-14 | Sandisk Technologies Inc. | Method and controller for performing a copy-back operation |
KR101691088B1 (ko) | 2010-02-17 | 2016-12-29 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
KR101691092B1 (ko) | 2010-08-26 | 2016-12-30 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US9378831B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
KR101658479B1 (ko) | 2010-02-09 | 2016-09-21 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US9324440B2 (en) | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US8908431B2 (en) | 2010-02-17 | 2014-12-09 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US20120236649A1 (en) * | 2011-03-17 | 2012-09-20 | Macronix International Co., Ltd. | Hot carrier programming of nand flash memory |
US20140198576A1 (en) * | 2013-01-16 | 2014-07-17 | Macronix International Co, Ltd. | Programming technique for reducing program disturb in stacked memory structures |
JP6179206B2 (ja) * | 2013-06-11 | 2017-08-16 | 株式会社リコー | メモリ制御装置 |
JP2015026406A (ja) * | 2013-07-24 | 2015-02-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR102242022B1 (ko) | 2013-09-16 | 2021-04-21 | 삼성전자주식회사 | 불휘발성 메모리 및 그것의 프로그램 방법 |
US8988945B1 (en) * | 2013-10-10 | 2015-03-24 | Sandisk Technologies Inc. | Programming time improvement for non-volatile memory |
KR102128825B1 (ko) | 2013-12-11 | 2020-07-01 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 동작 방법 |
KR20150073487A (ko) * | 2013-12-23 | 2015-07-01 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
KR20150091687A (ko) * | 2014-02-03 | 2015-08-12 | 에스케이하이닉스 주식회사 | 반도체 장치 |
KR102272238B1 (ko) * | 2014-09-02 | 2021-07-06 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US9640273B1 (en) * | 2016-08-25 | 2017-05-02 | Sandisk Technologies Llc | Mitigating hot electron program disturb |
US10381094B2 (en) | 2016-10-11 | 2019-08-13 | Macronix International Co., Ltd. | 3D memory with staged-level multibit programming |
US10229740B2 (en) * | 2016-10-17 | 2019-03-12 | SK Hynix Inc. | Memory system of 3D NAND flash and operating method thereof |
US9779820B1 (en) * | 2017-02-23 | 2017-10-03 | Macronix International Co., Ltd. | Non-volatile memory and programming method thereof |
US10297323B2 (en) * | 2017-10-06 | 2019-05-21 | Sandisk Technologies Llc | Reducing disturbs with delayed ramp up of dummy word line after pre-charge during programming |
US10283202B1 (en) * | 2017-11-16 | 2019-05-07 | Sandisk Technologies Llc | Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming |
US10276248B1 (en) | 2017-12-20 | 2019-04-30 | Sandisk Technologies Llc | Early ramp down of dummy word line voltage during read to suppress select gate transistor downshift |
CN110021309B (zh) * | 2019-03-26 | 2020-10-09 | 上海华力集成电路制造有限公司 | Nand型rom |
US10839915B1 (en) * | 2019-06-27 | 2020-11-17 | Sandisk Technologies Llc | Bitline boost for nonvolatile memory |
US10790003B1 (en) | 2019-07-31 | 2020-09-29 | Sandisk Technologies Llc | Maintaining channel pre-charge in program operation |
CN110718252A (zh) * | 2019-09-04 | 2020-01-21 | 合肥格易集成电路有限公司 | 一种控制编程噪声的方法和装置 |
EP3899949B1 (en) * | 2020-02-26 | 2023-08-16 | Yangtze Memory Technologies Co., Ltd. | Method of programming a memory device and related memory device |
JP6966587B2 (ja) * | 2020-03-02 | 2021-11-17 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置および読出し方法 |
US11062759B1 (en) * | 2020-04-01 | 2021-07-13 | Macronix International Co., Ltd. | Memory device and programming method thereof |
CN112700811A (zh) * | 2021-01-07 | 2021-04-23 | 长江存储科技有限责任公司 | 3d存储器件的编程方法 |
CN112820330A (zh) * | 2021-01-25 | 2021-05-18 | 长江存储科技有限责任公司 | 3d存储器件的编程方法 |
TWI750026B (zh) * | 2021-02-04 | 2021-12-11 | 力晶積成電子製造股份有限公司 | 快閃記憶體儲存裝置及其偏壓方法 |
US20230145681A1 (en) * | 2021-11-10 | 2023-05-11 | Samsung Electronics Co., Ltd. | Method of programming non-volatile memory device |
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2006
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US7450430B2 (en) | 2008-11-11 |
US20080159004A1 (en) | 2008-07-03 |
CN101627440A (zh) | 2010-01-13 |
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