CN101218650B - 从非易失性存储设备中读取数据的非易失性存储***及方法 - Google Patents
从非易失性存储设备中读取数据的非易失性存储***及方法 Download PDFInfo
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- CN101218650B CN101218650B CN2006800170294A CN200680017029A CN101218650B CN 101218650 B CN101218650 B CN 101218650B CN 2006800170294 A CN2006800170294 A CN 2006800170294A CN 200680017029 A CN200680017029 A CN 200680017029A CN 101218650 B CN101218650 B CN 101218650B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/099,049 | 2005-04-05 | ||
US11/099,049 US7187585B2 (en) | 2005-04-05 | 2005-04-05 | Read operation for non-volatile storage that includes compensation for coupling |
PCT/US2006/011813 WO2006107731A1 (en) | 2005-04-05 | 2006-03-31 | Read operation for non-volatile storage that includes compensation for coupling |
Publications (2)
Publication Number | Publication Date |
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CN101218650A CN101218650A (zh) | 2008-07-09 |
CN101218650B true CN101218650B (zh) | 2012-08-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2006800170294A Active CN101218650B (zh) | 2005-04-05 | 2006-03-31 | 从非易失性存储设备中读取数据的非易失性存储***及方法 |
Country Status (7)
Country | Link |
---|---|
US (6) | US7187585B2 (zh) |
EP (1) | EP1866931A1 (zh) |
JP (1) | JP4778553B2 (zh) |
KR (1) | KR100934496B1 (zh) |
CN (1) | CN101218650B (zh) |
TW (4) | TWI370454B (zh) |
WO (1) | WO2006107731A1 (zh) |
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- 2006-03-31 CN CN2006800170294A patent/CN101218650B/zh active Active
- 2006-03-31 KR KR1020077025331A patent/KR100934496B1/ko not_active IP Right Cessation
- 2006-03-31 EP EP06748991A patent/EP1866931A1/en not_active Withdrawn
- 2006-03-31 JP JP2008505382A patent/JP4778553B2/ja not_active Expired - Fee Related
- 2006-04-04 TW TW097127483A patent/TWI370454B/zh not_active IP Right Cessation
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- 2006-04-04 TW TW097127485A patent/TWI380308B/zh not_active IP Right Cessation
- 2006-04-04 TW TW095112038A patent/TWI323465B/zh not_active IP Right Cessation
- 2006-12-27 US US11/616,769 patent/US7301839B2/en active Active
- 2006-12-27 US US11/616,764 patent/US7321510B2/en not_active Expired - Fee Related
- 2006-12-27 US US11/616,757 patent/US7301808B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
US20070103975A1 (en) | 2007-05-10 |
KR20080016544A (ko) | 2008-02-21 |
KR100934496B1 (ko) | 2009-12-30 |
TW200901202A (en) | 2009-01-01 |
US7321510B2 (en) | 2008-01-22 |
US20070109846A1 (en) | 2007-05-17 |
TWI380308B (en) | 2012-12-21 |
US7301816B2 (en) | 2007-11-27 |
TWI370454B (en) | 2012-08-11 |
US7301839B2 (en) | 2007-11-27 |
TW200703341A (en) | 2007-01-16 |
EP1866931A1 (en) | 2007-12-19 |
TW200901203A (en) | 2009-01-01 |
TWI370451B (en) | 2012-08-11 |
US7301808B2 (en) | 2007-11-27 |
US7187585B2 (en) | 2007-03-06 |
US7414886B2 (en) | 2008-08-19 |
US20060221714A1 (en) | 2006-10-05 |
CN101218650A (zh) | 2008-07-09 |
WO2006107731A1 (en) | 2006-10-12 |
JP2008535144A (ja) | 2008-08-28 |
JP4778553B2 (ja) | 2011-09-21 |
US20070103982A1 (en) | 2007-05-10 |
US20070103987A1 (en) | 2007-05-10 |
US20070109850A1 (en) | 2007-05-17 |
TW200845015A (en) | 2008-11-16 |
TWI323465B (en) | 2010-04-11 |
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