CN101512662B - 基于使用耦合感测邻近者来对非易失性存储器中的相邻存储元件之间的耦合进行补偿 - Google Patents
基于使用耦合感测邻近者来对非易失性存储器中的相邻存储元件之间的耦合进行补偿 Download PDFInfo
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- CN101512662B CN101512662B CN2007800275411A CN200780027541A CN101512662B CN 101512662 B CN101512662 B CN 101512662B CN 2007800275411 A CN2007800275411 A CN 2007800275411A CN 200780027541 A CN200780027541 A CN 200780027541A CN 101512662 B CN101512662 B CN 101512662B
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- memory device
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/459,000 | 2006-07-20 | ||
US11/459,000 US7443729B2 (en) | 2006-07-20 | 2006-07-20 | System that compensates for coupling based on sensing a neighbor using coupling |
US11/458,997 US7522454B2 (en) | 2006-07-20 | 2006-07-20 | Compensating for coupling based on sensing a neighbor using coupling |
US11/458,997 | 2006-07-20 | ||
PCT/US2007/073737 WO2008011439A2 (en) | 2006-07-20 | 2007-07-18 | Compensating for coupling between adjacent storage elements in a nonvolatile memory, based on sensing a neighbour using coupling |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101512662A CN101512662A (zh) | 2009-08-19 |
CN101512662B true CN101512662B (zh) | 2012-06-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800275411A Active CN101512662B (zh) | 2006-07-20 | 2007-07-18 | 基于使用耦合感测邻近者来对非易失性存储器中的相邻存储元件之间的耦合进行补偿 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7522454B2 (zh) |
CN (1) | CN101512662B (zh) |
Families Citing this family (24)
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US7894269B2 (en) * | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
US7400535B2 (en) | 2006-07-20 | 2008-07-15 | Sandisk Corporation | System that compensates for coupling during programming |
US7885119B2 (en) | 2006-07-20 | 2011-02-08 | Sandisk Corporation | Compensating for coupling during programming |
US7443729B2 (en) | 2006-07-20 | 2008-10-28 | Sandisk Corporation | System that compensates for coupling based on sensing a neighbor using coupling |
US7660166B2 (en) | 2007-01-31 | 2010-02-09 | Sandisk Il Ltd. | Method of improving programming precision in flash memory |
JP4564521B2 (ja) * | 2007-09-06 | 2010-10-20 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7652929B2 (en) * | 2007-09-17 | 2010-01-26 | Sandisk Corporation | Non-volatile memory and method for biasing adjacent word line for verify during programming |
US8130552B2 (en) * | 2008-09-11 | 2012-03-06 | Sandisk Technologies Inc. | Multi-pass programming for memory with reduced data storage requirement |
KR20100045739A (ko) * | 2008-10-24 | 2010-05-04 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템 |
KR101636248B1 (ko) * | 2009-12-10 | 2016-07-06 | 삼성전자주식회사 | 플래시 메모리 장치, 이를 포함하는 플래시 메모리 시스템 및 이의 프로그램 방법 |
KR101038998B1 (ko) * | 2010-01-08 | 2011-06-03 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 비트라인 프리차지 전압 생성 회로 |
US8395936B2 (en) | 2011-05-09 | 2013-03-12 | Sandisk Technologies Inc. | Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory |
JP2011204356A (ja) * | 2011-07-19 | 2011-10-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9183940B2 (en) | 2013-05-21 | 2015-11-10 | Aplus Flash Technology, Inc. | Low disturbance, power-consumption, and latency in NAND read and program-verify operations |
WO2014210424A2 (en) | 2013-06-27 | 2014-12-31 | Aplus Flash Technology, Inc. | Novel nand array architecture for multiple simultaneous program and read |
WO2015013689A2 (en) | 2013-07-25 | 2015-01-29 | Aplus Flash Technology, Inc. | Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations |
WO2015037088A1 (ja) * | 2013-09-11 | 2015-03-19 | 株式会社 東芝 | 半導体記憶装置およびメモリシステム |
US9293205B2 (en) | 2013-09-14 | 2016-03-22 | Aplus Flash Technology, Inc | Multi-task concurrent/pipeline NAND operations on all planes |
US9613704B2 (en) | 2013-12-25 | 2017-04-04 | Aplus Flash Technology, Inc | 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify |
US9336891B2 (en) * | 2014-07-02 | 2016-05-10 | Sandisk Technologies Inc. | Look ahead read method for non-volatile memory |
WO2016014731A1 (en) | 2014-07-22 | 2016-01-28 | Aplus Flash Technology, Inc. | Yukai vsl-based vt-compensation for nand memory |
US9721652B2 (en) | 2015-11-17 | 2017-08-01 | Sandisk Technologies Llc | State dependent sensing for wordline interference correction |
US10304550B1 (en) * | 2017-11-29 | 2019-05-28 | Sandisk Technologies Llc | Sense amplifier with negative threshold sensing for non-volatile memory |
CN112331688B (zh) * | 2020-11-04 | 2022-07-29 | 中国电子科技集团公司第四十四研究所 | 一种同时实现大信号处理和高频转移的ccd结构 |
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US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
US6859397B2 (en) * | 2003-03-05 | 2005-02-22 | Sandisk Corporation | Source side self boosting technique for non-volatile memory |
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2006
- 2006-07-20 US US11/458,997 patent/US7522454B2/en active Active
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2007
- 2007-07-18 CN CN2007800275411A patent/CN101512662B/zh active Active
Patent Citations (2)
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US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
US6859397B2 (en) * | 2003-03-05 | 2005-02-22 | Sandisk Corporation | Source side self boosting technique for non-volatile memory |
Also Published As
Publication number | Publication date |
---|---|
CN101512662A (zh) | 2009-08-19 |
US20080019193A1 (en) | 2008-01-24 |
US7522454B2 (en) | 2009-04-21 |
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Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |