CN1703758A - 用减少的相邻场误差编程非易失性存储器及方法 - Google Patents
用减少的相邻场误差编程非易失性存储器及方法 Download PDFInfo
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- CN1703758A CN1703758A CNA038250993A CN03825099A CN1703758A CN 1703758 A CN1703758 A CN 1703758A CN A038250993 A CNA038250993 A CN A038250993A CN 03825099 A CN03825099 A CN 03825099A CN 1703758 A CN1703758 A CN 1703758A
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Images
Classifications
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- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,290 | 2002-09-24 | ||
US10/254,290 US6987693B2 (en) | 2002-09-24 | 2002-09-24 | Non-volatile memory and method with reduced neighboring field errors |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1703758A true CN1703758A (zh) | 2005-11-30 |
CN100590741C CN100590741C (zh) | 2010-02-17 |
Family
ID=31993320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03825099A Expired - Fee Related CN100590741C (zh) | 2002-09-24 | 2003-09-18 | 用减少的相邻场误差编程非易失性存储器及方法 |
Country Status (8)
Country | Link |
---|---|
US (5) | US6987693B2 (zh) |
EP (1) | EP1543527B1 (zh) |
JP (1) | JP4988156B2 (zh) |
KR (2) | KR101180644B1 (zh) |
CN (1) | CN100590741C (zh) |
AU (1) | AU2003267237A1 (zh) |
TW (1) | TWI318405B (zh) |
WO (1) | WO2004029983A2 (zh) |
Cited By (5)
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CN101868829A (zh) * | 2007-11-21 | 2010-10-20 | 美光科技公司 | 用于m位存储器单元的m+n位编程和m+l位读取 |
CN102203878A (zh) * | 2008-10-30 | 2011-09-28 | 桑迪士克公司 | 用于改进升压箝位的对位线编程 |
CN101627440B (zh) * | 2006-12-29 | 2012-11-14 | 桑迪士克股份有限公司 | 通过使用不同的预充电启用电压而以减少的编程干扰对非易失性存储器进行编程 |
CN101796590B (zh) * | 2007-06-29 | 2013-01-30 | 桑迪士克科技股份有限公司 | 具有源极偏压全位线感测的非易失性存储器 |
CN103035292A (zh) * | 2011-09-29 | 2013-04-10 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
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US7443757B2 (en) * | 2002-09-24 | 2008-10-28 | Sandisk Corporation | Non-volatile memory and method with reduced bit line crosstalk errors |
US6987693B2 (en) | 2002-09-24 | 2006-01-17 | Sandisk Corporation | Non-volatile memory and method with reduced neighboring field errors |
US7196931B2 (en) * | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
US7327619B2 (en) * | 2002-09-24 | 2008-02-05 | Sandisk Corporation | Reference sense amplifier for non-volatile memory |
US6880144B2 (en) * | 2003-02-04 | 2005-04-12 | Sun Microsystems, Inc. | High speed low power bitline |
US6956770B2 (en) | 2003-09-17 | 2005-10-18 | Sandisk Corporation | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
US7064980B2 (en) * | 2003-09-17 | 2006-06-20 | Sandisk Corporation | Non-volatile memory and method with bit line coupled compensation |
US7020017B2 (en) * | 2004-04-06 | 2006-03-28 | Sandisk Corporation | Variable programming of non-volatile memory |
US7490283B2 (en) | 2004-05-13 | 2009-02-10 | Sandisk Corporation | Pipelined data relocation and improved chip architectures |
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US7173854B2 (en) * | 2005-04-01 | 2007-02-06 | Sandisk Corporation | Non-volatile memory and method with compensation for source line bias errors |
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CN101627440B (zh) * | 2006-12-29 | 2012-11-14 | 桑迪士克股份有限公司 | 通过使用不同的预充电启用电压而以减少的编程干扰对非易失性存储器进行编程 |
CN101796590B (zh) * | 2007-06-29 | 2013-01-30 | 桑迪士克科技股份有限公司 | 具有源极偏压全位线感测的非易失性存储器 |
CN101868829A (zh) * | 2007-11-21 | 2010-10-20 | 美光科技公司 | 用于m位存储器单元的m+n位编程和m+l位读取 |
CN101868829B (zh) * | 2007-11-21 | 2014-01-29 | 美光科技公司 | 用于m位存储器单元的m+n位编程和m+l位读取 |
CN102203878A (zh) * | 2008-10-30 | 2011-09-28 | 桑迪士克公司 | 用于改进升压箝位的对位线编程 |
US8520448B1 (en) | 2008-10-30 | 2013-08-27 | Sandisk Technologies Inc. | Sequential programming of sets of non-volatile elements to improve boost voltage clamping |
CN102203878B (zh) * | 2008-10-30 | 2014-03-19 | 桑迪士克科技股份有限公司 | 用于改进升压箝位的对位线编程 |
CN103035292A (zh) * | 2011-09-29 | 2013-04-10 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
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WO2004029983A2 (en) | 2004-04-08 |
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US8023322B2 (en) | 2011-09-20 |
AU2003267237A1 (en) | 2004-04-19 |
KR101180644B1 (ko) | 2012-09-18 |
US20120002483A1 (en) | 2012-01-05 |
JP4988156B2 (ja) | 2012-08-01 |
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WO2004029983A3 (en) | 2004-11-04 |
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US20040057285A1 (en) | 2004-03-25 |
TW200409127A (en) | 2004-06-01 |
US20100182831A1 (en) | 2010-07-22 |
US7239551B2 (en) | 2007-07-03 |
US8300457B2 (en) | 2012-10-30 |
JP2006500729A (ja) | 2006-01-05 |
US20060023502A1 (en) | 2006-02-02 |
EP1543527A2 (en) | 2005-06-22 |
KR20050084586A (ko) | 2005-08-26 |
KR20120087901A (ko) | 2012-08-07 |
KR101169344B1 (ko) | 2012-08-02 |
CN100590741C (zh) | 2010-02-17 |
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