CN101194322B - 一种非易失性存储器***及其读取方法 - Google Patents
一种非易失性存储器***及其读取方法 Download PDFInfo
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- CN101194322B CN101194322B CN2006800166941A CN200680016694A CN101194322B CN 101194322 B CN101194322 B CN 101194322B CN 2006800166941 A CN2006800166941 A CN 2006800166941A CN 200680016694 A CN200680016694 A CN 200680016694A CN 101194322 B CN101194322 B CN 101194322B
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- G—PHYSICS
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- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/099,133 US7196928B2 (en) | 2005-04-05 | 2005-04-05 | Compensating for coupling during read operations of non-volatile memory |
US11/099,133 | 2005-04-05 | ||
PCT/US2006/011810 WO2006107729A1 (en) | 2005-04-05 | 2006-03-31 | Compensating for coupling during read operations of non-volatile-memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101194322A CN101194322A (zh) | 2008-06-04 |
CN101194322B true CN101194322B (zh) | 2012-05-23 |
Family
ID=36648658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800166941A Expired - Fee Related CN101194322B (zh) | 2005-04-05 | 2006-03-31 | 一种非易失性存储器***及其读取方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7196928B2 (zh) |
EP (1) | EP1866929B1 (zh) |
JP (1) | JP4665029B2 (zh) |
KR (1) | KR100934495B1 (zh) |
CN (1) | CN101194322B (zh) |
TW (1) | TWI300929B (zh) |
WO (1) | WO2006107729A1 (zh) |
Families Citing this family (516)
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JP2008536251A (ja) | 2008-09-04 |
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US20070109849A1 (en) | 2007-05-17 |
US7301810B2 (en) | 2007-11-27 |
KR20080016543A (ko) | 2008-02-21 |
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