CN100570738C - 具有多个层叠的存储芯片的半导体存储器件 - Google Patents
具有多个层叠的存储芯片的半导体存储器件 Download PDFInfo
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- CN100570738C CN100570738C CN200610071011.4A CN200610071011A CN100570738C CN 100570738 C CN100570738 C CN 100570738C CN 200610071011 A CN200610071011 A CN 200610071011A CN 100570738 C CN100570738 C CN 100570738C
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005098027A JP4309368B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体記憶装置 |
JP2005098027 | 2005-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841551A CN1841551A (zh) | 2006-10-04 |
CN100570738C true CN100570738C (zh) | 2009-12-16 |
Family
ID=37030522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610071011.4A Expired - Fee Related CN100570738C (zh) | 2005-03-30 | 2006-03-30 | 具有多个层叠的存储芯片的半导体存储器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7466577B2 (zh) |
JP (1) | JP4309368B2 (zh) |
CN (1) | CN100570738C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105405458A (zh) * | 2014-09-05 | 2016-03-16 | 爱思开海力士有限公司 | 层叠型半导体装置 |
CN108573727A (zh) * | 2017-03-10 | 2018-09-25 | 东芝存储器株式会社 | 半导体存储装置及其控制方法 |
CN108630668A (zh) * | 2017-03-22 | 2018-10-09 | 东芝存储器株式会社 | 半导体装置 |
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CN108573727A (zh) * | 2017-03-10 | 2018-09-25 | 东芝存储器株式会社 | 半导体存储装置及其控制方法 |
CN108573727B (zh) * | 2017-03-10 | 2022-03-22 | 铠侠股份有限公司 | 半导体存储装置及其控制方法 |
CN108630668A (zh) * | 2017-03-22 | 2018-10-09 | 东芝存储器株式会社 | 半导体装置 |
CN108630668B (zh) * | 2017-03-22 | 2021-12-07 | 东芝存储器株式会社 | 半导体装置 |
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US7466577B2 (en) | 2008-12-16 |
US20060233012A1 (en) | 2006-10-19 |
JP4309368B2 (ja) | 2009-08-05 |
CN1841551A (zh) | 2006-10-04 |
JP2006277870A (ja) | 2006-10-12 |
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