WO2020211260A1 - Cmp工艺的晶圆装载支架、晶圆装载***及晶圆装片方法 - Google Patents

Cmp工艺的晶圆装载支架、晶圆装载***及晶圆装片方法 Download PDF

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Publication number
WO2020211260A1
WO2020211260A1 PCT/CN2019/104291 CN2019104291W WO2020211260A1 WO 2020211260 A1 WO2020211260 A1 WO 2020211260A1 CN 2019104291 W CN2019104291 W CN 2019104291W WO 2020211260 A1 WO2020211260 A1 WO 2020211260A1
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WO
WIPO (PCT)
Prior art keywords
wafer
polishing head
adsorption film
pressure
loading
Prior art date
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PCT/CN2019/104291
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English (en)
French (fr)
Inventor
徐辉
沈凌寒
Original Assignee
杭州众硅电子科技有限公司
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Filing date
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Application filed by 杭州众硅电子科技有限公司 filed Critical 杭州众硅电子科技有限公司
Priority to KR1020217029530A priority Critical patent/KR102605197B1/ko
Priority to SG11202111470XA priority patent/SG11202111470XA/en
Priority to US17/440,191 priority patent/US20220152777A1/en
Publication of WO2020211260A1 publication Critical patent/WO2020211260A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • B24B49/165—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load for grinding tyres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
    • B25B11/005—Vacuum work holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the invention relates to the field of semiconductor integrated circuit chip manufacturing, in particular to a wafer loading bracket, a wafer loading system and a wafer loading method for a CMP process.
  • CMP Chemical Mechanical Planarization
  • the CMP equipment mainly uses the polishing head to adsorb and load the wafer onto the polishing pad for polishing. After polishing, the polishing head returns to the wafer loading bracket to unload the wafer.
  • the wafer loading operation of the polishing head is a very critical technology. If this operation is not handled properly and the relevant process parameters are not adjusted correctly, the wafer may fail to load or fall off from the polishing head during the loading process, resulting in wafer drop. Falling wafers will not only damage the wafers, but also need to shut down the equipment for cleaning and maintenance, which will reduce the product yield and production efficiency. In addition, the stability of wafer loading will directly affect its performance in the chemical mechanical polishing process. Polishing effect.
  • the loading equipment is composed of a wafer holder and a polishing head.
  • the center cavity in contact with the wafer is under normal pressure, and the wafer is carried by the completely horizontal wafer holder on the wafer holder and rises to contact the adsorption film on the surface of the cavity and further rises to squeeze the cavity until it contacts the adsorption film Complete contact, and then the cavity near the edge of the wafer is pressurized to seal the contact area between the adsorption film and the wafer.
  • the cavity near the edge of the wafer is turned to a normal pressure state to complete the wafer Circular loading action.
  • the adsorption film of the central cavity produces small wrinkles under normal pressure, the wafer and the adsorption film cannot maintain close contact, which will reduce the success rate of wafer loading.
  • the wafer rises and squeezes the central cavity on the carrier the lower surface of the wafer is squeezed by the horizontal carrier, which may introduce defects such as scratches and particles.
  • the invention discloses a CMP process wafer loading bracket, a wafer loading system and a wafer loading method.
  • a liftable wafer loading bracket and a polishing head containing multiple pressure medium cavities are adopted.
  • the suction film of the polishing head produces arc-shaped deformation under pressure, and the wafer on the wafer loading bracket carrier is lifted to the loading position and contact with the suction film.
  • the carrier is composed of a basin-shaped bracket with a high edge and a low center.
  • the wafer holder further lifts the wafer, the wafer gradually adheres to the adsorption film from the center to the periphery under the pressure of the wafer holder and the adsorption film, and evacuates the air between the two.
  • the center area of the wafer is not Contact with the wafer holder to avoid scratches on the wafer during the loading process; at this time, vacuum is applied to the pressure medium cavity in contact with the adsorption film, and the wafer and the adsorption film are transferred to the polishing head under vacuum to complete the loading.
  • the pressure monitoring device in the wafer loading bracket and polishing head can effectively detect the wafer loading status.
  • a wafer loading support for CMP process comprising a base and a wafer seat on the base, the wafer support is used for placing wafers, and the wafer loading support is matched with a polishing head for loading wafers
  • the polishing head includes a first pressure medium cavity that controls the vertical movement of the polishing head, a second pressure medium cavity that keeps the cavity airtight by loading pressure, and a third pressure medium cavity connected to the second pressure medium cavity.
  • the wafer holder drives the wafer to rise, and when the wafer has been polished After the adsorption film deformed in an arc shape outside the head is in contact, the wafer holder can be further raised so that the wafer is attached to the adsorption film; the wafer holder is a basin-shaped holder with a high edge and a low center. Frame structure, so that when the wafer is in full contact with the adsorption film, the edge of the wafer is in contact with the carrier and the middle area of the wafer is not in contact with the carrier to avoid crystal The lower surface of the circle is squeezed by the bearing seat to introduce defects such as scratches and particles.
  • a lifting plate is connected to the lower part of the supporting plate, and the supporting plate continues to rise through the lifting plate to further raise the height of the wafer, and the supporting plate is squeezed to produce a circular arc during the continuous lifting process
  • the deformed adsorption film increases the contact area with the wafer on the carrier. At this time, the adsorption film deforms. The deformation first contacts the center of the wafer and gradually extends outward until it is completely contacted with the wafer. Contact to remove the air between the wafer and the wafer holder.
  • the lower part of the shoe seat is connected to the upper part of the lifting plate through a plurality of stop bolts to control the lifting action of the shoe seat.
  • the lifting height of the base is 5mm ⁇ Ha ⁇ 150mm, and the lifting height of the sheet holder is 0mm ⁇ Hb ⁇ 30mm.
  • the third pressure medium cavity of the polishing head is provided with one or more, so as to adjust the air pressure in different areas and control the adsorption film form of the polishing head.
  • the set pressure loaded by the second pressure medium cavity of the polishing head is 0.1 psi ⁇ P2 ⁇ 9.0 psi; the third pressure medium cavity of the polishing head is filled with gas to make the adsorption
  • the pressure value for the arc-shaped deformation of the membrane is 0.1psi ⁇ P3 ⁇ 8.0psi, and the pressure time is 200ms ⁇ t3 ⁇ 8000ms.
  • the third pressure medium cavity is changed from a pressurized state to a vacuum state, and the adsorption film and the The wafer is adsorbed to the polishing head; the vacuum value of the third pressure medium chamber changed to a vacuum state is -9.0psi ⁇ Vac ⁇ -0.1psi.
  • the present invention also provides a wafer loading method based on the wafer loading bracket as described above, and the method includes the following steps:
  • the wafer holder for loading the wafer rises to the loading position as the base rises, and the wafer is in contact with the adsorption film above it;
  • the wafer holder can be further raised on the basis of the wafer raised by the susceptor to continue to lift the wafer.
  • the upward lifting of the wafer holder generates upward pressure on the adsorption film, and the adsorption film is deformed, which first contacts the wafer The center position gradually extends outwards until it is in full contact with the wafer, exhausting the air between the wafer and the adsorption film;
  • the wafer mounting method further includes the following steps:
  • the present invention also provides a wafer loading system for CMP process, which includes a polishing head for loading wafers and the wafer loading bracket as described above.
  • the polishing head includes: a first pressure medium cavity, Adjust to control the vertical movement of the polishing head; the second pressure medium cavity is loaded with a set pressure and keep the cavity airtight; one or more third pressure medium cavities, and the second pressure medium cavity Connected by a conduction valve; an adsorption film for adsorbing wafers on a wafer seat with a high edge and a low center; the third pressure medium cavity is in contact with the adsorption film below, and the adsorption is controlled by pressure adjustment The state of the film; wherein, when gas is injected into the third pressure medium cavity, the adsorption film is deformed in a circular arc toward the outer direction of the polishing head, and the adsorption film and the crystal on the carrier seat Contact with each other and change the third pressure medium cavity from a pressurized state to a vacuum state, and
  • the bracket bearing seat of the present invention is designed as a basin-shaped bracket structure with a high edge and a low center, which avoids receiving the wafer on the lower surface of the wafer during the loading process.
  • the seat is squeezed to introduce defects such as scratches and particles, and it gradually adheres to the adsorption film from the center to the periphery, which can effectively drain the air between the wafer and the seat seat;
  • the wafer used in the present invention The loading process method is more concise, does not need to pressurize the edge of the wafer, the time is short, the efficiency is high, and the implementation effect is good, which ensures the success rate of the wafer in the loading process;
  • the support and polishing head of the present invention The pressure monitoring device can effectively detect the adsorption state of the wafer, and detect the state of the wafer during the loading process, that is, the judgment basis after the successful loading of the wafer is converted into the water pressure value and the air pressure value change of the airtight chamber.
  • the judgment method is simple, fast, and highly accurate.
  • Figure 1 is a cross-sectional view of the wafer loading bracket of the present invention
  • FIG. 2 is a top view of the wafer loading bracket of the present invention
  • 3A is a schematic diagram of the three-dimensional structure of the polishing head of the present invention.
  • 3B is a schematic diagram of the planar structure of the polishing head of the present invention.
  • FIG. 4 is a schematic diagram of the deformation of the adsorption film of the polishing head of the present invention.
  • Fig. 5 is a schematic diagram of the wafer holder lifting wafer according to the present invention.
  • Fig. 6 is a schematic diagram of the adsorption film adsorbing a wafer of the present invention.
  • FIG. 8 is a schematic diagram of the wafer loading process of the present invention.
  • the wafer loading bracket of the present invention includes a base 1, a lifting plate 2, a limit block 3 and a wafer seat 4.
  • the circular base 1 is used to carry the limiting block 3 and the bearing seat 4, the limiting block 3 and the bearing seat 4 are located above the base 1, and the limiting block 3 extends the bearing seat 4 along the edge of the bearing seat 4
  • the limit block 3 can ensure the accuracy of the position of the wafer 7 during the loading process, because the height of the carrier 4 at the position of the wafer 7 is slightly lower than the limit block 3, thus ensuring that the wafer 7 is accurately Placed in the bearing seat 4.
  • the bearing seat 4 is composed of a basin-shaped bracket structure with high edges and low center.
  • the lower end of the bearing seat 4 is connected with the upper end of the lifting plate 2 through a number of stop bolts 401 to control the lifting action of the bearing seat 4 Therefore, the wafer 7 is further lifted at the wafer loading position, but the present invention is not limited to the connection with the lifting plate 2 through the stop bolt 401.
  • a number of deionized water nozzles are evenly installed on the base 1 along the circumferential direction, and each deionized water nozzle is correspondingly connected to the water pressure detection sensor 5, and transmits the corresponding water pressure signal to the water.
  • the pressure detection sensor 5 can be used in the present invention to detect the existence state of the wafer 7 on the wafer holder 4 in real time through the water pressure change of the water pressure detection sensor 5.
  • the number of deionized water nozzles is not less than three.
  • the polishing head 6 of the present invention includes a first pressure medium cavity 61, a second pressure medium cavity 62, an adsorption film 64, and a pressure medium cavity 63 in contact with the adsorption film 64 (note As a third pressure medium chamber 63) and a pilot valve 65.
  • the first pressure medium cavity 61, the second pressure medium cavity 62, the third pressure medium cavity 63, and the adsorption film 64 are arranged in order from top to bottom. Part of the surface of the second pressure medium cavity 62 is exposed to the third pressure medium cavity.
  • the pressure medium cavity 63 is arranged in order from top to bottom.
  • the first pressure medium cavity 61 can control the vertical movement of the polishing head through pressure adjustment. Specifically, when a pressure medium (such as air) is injected into the cavity of the first pressure medium cavity 61, the first pressure medium cavity 61 expands and causes the polishing head to move downward; When the body 61 performs a vacuum operation, the volume of the first pressure medium cavity 61 shrinks, and the polishing head is lifted upward. Among them, after the polishing head is loaded on the wafer 7, the first pressure medium cavity 61 is compressed, the polishing head is rotated and translated to the top of the polishing unit, and then a pressure medium is injected into the cavity to lower the polishing head, and the wafer 7 is Polishing on the polishing unit. After the polishing is completed, the polishing head is lifted up and rotated and translated to the wafer loading bracket to complete the unloading action.
  • a pressure medium such as air
  • the second pressure medium cavity 62 and the third pressure medium cavity 63 are connected by a conduction valve 65.
  • the conduction valve 65 is composed of a lower partition and an upper telescopic spring.
  • the conduction valve 65 will be turned on after being physically touched (that is, the adsorption film 64 referred to below is deformed inward under the action of a vacuum).
  • the valve 65 is lifted upwards, the pressurized partition will compress the spring, and the conduction valve 65 opens inward so that the two chambers (the second pressure medium chamber 62 and the third pressure medium chamber 63) are connected.
  • the adsorption membrane 64 is a closed elastic membrane, and the third pressure medium cavity 63 can control the state of the adsorption membrane 64 below it through pressure adjustment.
  • the number of the third pressure medium cavities 63 of the present invention is not limited to one, but can be more than one. That is, the present invention can adjust the air pressure in different areas through one or more third pressure medium cavities 63, which can be more rapid and accurate.
  • the deformation range and state of the adsorption film 64 are controlled.
  • the adsorption film 64 will be polished under the action of the pressure medium A certain arc-shaped deformation occurs in the outer direction of the head 6 (as shown by the numeral 64a in Figure 4), because when a certain amount of gas is injected into the third pressure medium cavity 63, the air pressure of the third pressure medium cavity 63 increases, And higher than the outside atmospheric pressure, the elastic adsorption film 64 is squeezed outward to form a circular arc shape deformation, and then a certain pressure is applied to the second pressure medium cavity 62 and the cavity is kept in a closed state (for example, the pressure range is 0.1psi ⁇ P2 ⁇ 9.0psi).
  • the wafer 7 is placed in the carrier 4, and the susceptor 1 rises to drive the wafer 7 up (for example, the height of the susceptor is 5mm ⁇ Ha ⁇ 150mm), and the raised wafer 7
  • the adsorption film 64 makes contact.
  • the outlet of the deionized water nozzle on the susceptor 1 will be covered by the wafer 7, and the water pressure of the deionized water nozzle will increase, and the corresponding The water pressure rise signal is transmitted to the water pressure detection sensor 5. Therefore, when the water pressure signal of each water pressure detection sensor 5 is a rising water pressure signal, it indicates that the placement position of the wafer 7 on the carrier 4 is accurate, otherwise, it indicates that the wafer 7 is on the carrier 4 Is placed in the wrong location.
  • the carrier 4 continues to rise at the current height position through the lifting plate 2, that is, the height of the wafer 7 is continued to be raised (for example, the lifting height of the carrier 4 is 0mm ⁇ Hb ⁇ 30mm), because the carrier 4 continues to lift In the process, the adsorption film will be squeezed. Because the adsorption film 64 is pressed downward by the third pressure medium cavity 63, the carrier 4 rises upward to generate upward pressure on the adsorption film 64, resulting in the adsorption film 64 being squeezed and The contact area of the wafer 7 on the wafer holder 4 increases. At this time, the adsorption film 64 produces a certain deformation under the joint action of the wafer 7 and the pressure medium. The deformation first contacts the center of the wafer 7 and gradually extends outward until it is The wafer 7 is in complete contact, effectively removing the air between the wafer 7 and the carrier.
  • the center of the wafer 7 receives the largest pressure and the edge receives less pressure (because the center of the wafer 7 receives the largest downward pressure from the third pressure medium cavity 63 ), because the wafer holder 4 is designed as a basin-shaped bracket structure with a high edge and a low center, the edge position of the wafer 7 is in contact with the wafer holder 4 to play a supporting role, and the area with greater central pressure is not connected to the wafer holder 4 contact, thereby avoiding the scratches caused by the pressure on the lower surface of the wafer 7.
  • this method of exhausting air from the center to the periphery through the deformation of the adsorption film is reasonable in design, the loading process is simple, and there is no need to pressurize the edge of the wafer 7, the time is short, the efficiency is high, and the implementation effect is good, ensuring the wafer 7 The success rate during the loading process.
  • the third pressure medium cavity 63 is changed from the pressurized state to the vacuum state, because the adsorption film 64 is completely tightly attached to the wafer 7, Both are adsorbed on the surface of the polishing head 6 at the same time to complete the wafer loading action.
  • the second pressure medium cavity 62 is squeezed by the third pressure medium cavity 63 (because the third pressure medium cavity 63 changes from pressurization to a vacuum state, the inward deformation makes the second pressure medium cavity 62 suffer Extrusion), the volume of the second pressure medium cavity 62 becomes smaller and the air pressure value rises, indicating that the wafer is loaded to the polishing head.
  • the wafer 7 on the wafer holder 4 is smoothly transferred to the polishing head 6, which causes the water pressure of the water pressure detection sensor 5 to drop, confirming that the wafer has left the base. Therefore, the drop in the water pressure of the water pressure detection sensor 5 and the increase in the air pressure value of the second pressure medium cavity 62 are used as the basis for determining the success of the wafer loading, that is, the loading is successful only when these two conditions are met.
  • the adsorption film 64 and the wafer 7 are not closely attached, the wafer 7 is not adsorbed and lifted by the adsorption film 64, and the water pressure of the water pressure detection sensor 5 remains unchanged; or when The wafer 7 falls from the adsorption film 64 during the lifting process.
  • the cavity of the third pressure medium cavity 63 is transformed into a vacuum state and generates a pressure difference with the outside atmosphere, causing the adsorption film 64 to move toward the polishing head 6 Deformation occurs, and the deformed adsorption film 64 touches the diaphragm at the lower part of the pilot valve 65.
  • the pressurized diaphragm will compress the spring on the upper part of the pilot valve 65 to open the pilot valve 65 inward, making the second pressure medium cavity 62 It is connected to the third pressure medium chamber 63 (in order to ensure that the difference between the vacuum of the third pressure medium chamber and the atmospheric pressure produces a reasonable deformation to touch the pilot valve, the vacuum value can be set -9.0psi ⁇ Vac ⁇ -0.1psi), then The gas in the second pressure medium cavity 62 is evacuated to a vacuum state through the vacuum generator connected to the third pressure medium cavity 63. Therefore, whether the water pressure of the water pressure detection sensor 5 remains unchanged or the second pressure medium cavity 62 becomes a vacuum state can be used as a judgment basis for wafer loading failure, and the state of the wafer during the loading process can be detected.
  • the basis for determining the wafer loading status by reasonably designing the water pressure value of the water pressure detection sensor 5 and the state of the second pressure medium cavity 62 is simple and fast, with high safety and accuracy.
  • the inner surface of the adsorption film 64 in the present invention is close to the support frame with a plurality of circular holes, because if the support frame is not present, the adsorption film 64 will be oriented towards The internal deformation occurs and touches the conduction valve 65, that is, the function of the support frame is to prevent the adsorption film 64 from being absorbed into the cavity as a whole, and the circular hole is provided to allow a part of the area to deform inward to adsorb the wafer 7 It can make the inward deformation touch the conduction valve 65 when the wafer 7 falls.
  • the present invention provides a wafer mounting method for CMP process.
  • the method includes the following steps:
  • the wafer holder for loading the wafer rises to the loading position as the base rises, and the wafer is in contact with the adsorption film above it;
  • the wafer holder can further rise on the basis of the wafer raised by the base, and continue to lift the wafer.
  • the upward lift of the wafer holder generates upward pressure on the adsorption film, and the adsorption film deforms, which first contacts the center of the wafer and gradually Extend outwards until it is in full contact with the wafer, exhaust the air between the wafer and the adsorption film;
  • the third pressure medium cavity in contact with the adsorption film is converted from a pressurized state to a vacuum state, and the adsorption film and the wafer are adsorbed to the polishing head.
  • the present invention uses a liftable wafer loading bracket and a polishing head containing multiple pressure medium cavities.
  • the adsorption film of the polishing head is deformed in an arc under pressure, and the wafer
  • the wafer on the loading bracket carrier is lifted to the loading position and is in contact with the adsorption film.
  • the carrier is composed of a basin-shaped bracket with a high edge and a low center. The carrier further lifts the wafer, and the wafer is in the carrier and adsorbed Under the pressure of the film, it gradually adheres to the adsorption film from the center to the periphery, and evacuates the air between the two.
  • the center area of the wafer does not contact the wafer holder to avoid scratches during the loading process of the wafer;
  • a vacuum is applied to the pressure medium cavity in contact with the adsorption film, and the wafer and the adsorption film are transferred to the polishing head under vacuum to complete the loading.
  • the pressure monitoring device in the wafer loading bracket and the polishing head can effectively detect the wafer Loading status.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种晶圆装载支架、晶圆装载***及晶圆装片方法，采用可升降的晶圆装载支架和包含多个压力介质腔体（61,62,63）的抛光头（6），晶圆装载过程中，抛光头（6）的吸附膜（64）在压力下产生圆弧形形变，将晶圆装载支架承片座（4）上的晶圆（7）抬升至装载位置并与吸附膜（64）接触，承片座（4）由边缘高中心低的盆形托架构成，承片座（4）进一步抬升晶圆（7），晶圆（7）在承片座（4）和吸附膜（64）的压力下由中心向四周逐步与吸附膜（64）紧密贴合，排空两者间的空气，在此过程，晶圆（7）中心区域不与承片座（4）接触，避免晶圆（7）在装载过程中产生划痕；此时对接触吸附膜（64）的压力介质腔体施加真空，晶圆（7）与吸附膜（64）在真空下将晶圆（7）转移至抛光头（6），完成装载，晶圆装载支架和抛光头（6）内的压力监测装置可有效检测晶圆装载状态。

Description

CMP工艺的晶圆装载支架、晶圆装载***及晶圆装片方法 技术领域
本发明涉及半导体集成电路芯片制造领域，特别涉及一种CMP工艺的晶圆装载支架、晶圆装载***及晶圆装片方法。
背景技术
半导体集成电路芯片制造工艺中，平坦化技术已成为不可缺少的关键技术之一。化学机械平坦化(Chemical Mechanical Planarization，CMP)工艺是目前最有效、最成熟的平坦化技术。CMP设备是完全自动化的，保证晶圆在生产过程中每一模块每一环节的安全性，对于安全生产、降低损耗、提高生产效率具有重要的意义。CMP设备主要是通过抛光头将晶圆吸附装载到抛光垫上进行抛光，抛光结束后再由抛光头运回晶圆装载支架卸载放片。
在CMP的工艺过程中，抛光头装载晶圆操作是一项十分关键的技术。若未处理好此作业、未调节正确相关工艺参数，可能会出现在装载过程中晶圆装载失败或从抛光头脱落而发生掉片的情况。晶圆掉落不仅会对晶圆造成损伤，还需停机对设备进行清理检修，这将降低产品良率和生产效率，此外，晶圆装载的稳定性将直接影响其在化学机械抛光过程中的抛光效果。
关于晶圆的装载工艺，业界已有较为成熟的模式，如专利号为US7527271B2的美国专利文献披露的技术方案中，其装载设备由晶圆支架和抛光头组成。工作时，与晶圆接触的中心腔体处于常压状态，晶圆由晶圆支架上完全水平的承片座承载上升与腔体表面的吸附膜接触并进一步上升挤压腔体直至与吸附膜完全接触，而后晶圆边缘附近腔体加压密封吸附膜与晶圆的接触区域，中心腔体抽真空将晶圆转移至抛光头之后，晶圆边缘附近腔体转为常压状态，完成晶圆装载动作。当中心腔体的吸附膜在常压状态下产生微小褶皱时，晶圆与吸附膜不能保持紧密接触，将降低晶圆装载的成功率。另一方面，晶圆在承片座上升挤压中心腔体时，晶圆下表面受水平承片座挤压可能会引入划痕、颗粒等缺陷。
以上叙述，表明从工艺改进的角度来看，晶圆装载过程仍有优化的空间。
发明的公开
本发明公开一种CMP工艺的晶圆装载支架、晶圆装载***及晶圆装片方法，采用可升降的晶圆装载支架和包含多个压力介质腔体的抛光头，晶圆装载过程中，抛光头的吸附膜在压力下产生圆弧形形变，将晶圆装载支架承片座上的晶圆抬升至装载位置并与吸附膜接触，承片座由边缘高中心低的盆形托架构成，承片座进一步抬升晶圆，晶圆在承片座和吸附膜的压力下由中心向四周逐步与吸附膜紧密贴合，排空两者间的空气，在此过程，晶圆中心区域不与承片座接触，避免晶圆在装载过程中产生划痕；此时对接触吸附膜的压力介质腔体施加真空，晶圆与吸附膜在真空下将晶圆转移至抛光头，完成装载，晶圆装载支架和抛光头内的压力监测装置可有效检测晶圆装载状态。
为了达到上述目的，本发明通过以下技术方案实现：
一种CMP工艺的晶圆装载支架，包含基座及位于其上的承片座，所述承片座用于放置晶圆，所述晶圆装载支架与用于装载晶圆的抛光头相配合，所述抛光头包括控制所述抛光头垂直方向运动的第一压力介质腔体、通过加载压力保持腔体密闭的第二压力介质腔体、与所述第二压力介质腔体相连的第三压力介质腔体以及用于吸附晶圆并与所述第三压力介质腔体接触的吸附膜，所述承片座在所述基座上升时带动所述晶圆抬升，并在与已产生抛光头外方向圆弧形形变的所述吸附膜接触后，所述承片座可进一步抬升使所述晶圆与所述吸附膜贴合；所述承片座为边缘高中心低的盆形托架结构，使得所述晶圆与所述吸附膜完全接触过程中，所述晶圆的边缘与所述承片座接触且所述晶圆的中间区域不与所述承片座接触，避免晶圆下表面受承片座挤压而引入划痕、颗粒等缺陷。
优选地，所述承片座下部连接有升降板，所述承片座通过所述升降板继续上升以进一步抬升晶圆的高度，所述承片座在继续抬升过程中挤压已产生圆弧形形变的所述吸附膜且与所述承片座上的晶圆接触面积增大，此时所述吸附膜产生形变，该形变先接触晶圆中心位置并逐步向外延伸直至与晶圆完全接触，排除晶圆与承片座之间的空气。
优选地，所述承片座的下部通过若干个止动螺栓与所述升降板的上部连 接，用以控制所述承片座的升降动作。
优选地，所述基座的升降高度为5mm≤Ha≤150mm，所述承片座的升降高度0mm≤Hb≤30mm。
优选地，所述抛光头的所述第三压力介质腔体设置为一个或多个，用以调节不同区域的气压，控制所述抛光头的吸附膜形态。
优选地，所述抛光头的所述第二压力介质腔体加载的设定压力为0.1psi≤P2≤9.0psi；所述抛光头的所述第三压力介质腔体注入有气体使所述吸附膜产生圆弧形形变的压力值为0.1psi≤P3≤8.0psi，加压时间为200ms≤t3≤8000ms。
优选地，当所述抛光头的所述吸附膜与所述承片座上的晶圆接触后将所述第三压力介质腔体由加压状态改变为真空状态，所述吸附膜和所述晶圆被吸附至所述抛光头；所述第三压力介质腔体改变为真空状态的真空数值为-9.0psi≤Vac≤-0.1psi。
本发明还提供了一种基于如上文所述的晶圆装载支架的晶圆装片方法，该方法包含以下步骤：
S1、将晶圆置于晶圆装载支架的承片座上；
S2、对所述抛光头的第三压力介质腔体注入气体使得所述抛光头的吸附膜向抛光头外方向产生圆弧形形变；
S3、对抛光头的第二压力介质腔体加载设定压力并保持腔体密闭的状态；
S4、装载晶圆的承片座随着基座抬升而上升至装载位置，晶圆与其上方的所述吸附膜接触；
S5、所述承片座在基座抬升晶圆基础上可进一步上升，继续抬升晶圆，所述承片座向上抬升对吸附膜产生向上的压力，吸附膜产生形变，该形变先接触晶圆中心位置并逐步向外延伸直至与晶圆完全接触，排尽晶圆与吸附膜之间的空气；
S6、将与所述吸附膜接触的第三压力介质腔体由加压状态转为真空状态，所述吸附膜和所述晶圆被吸附至所述抛光头。
优选地，所述的晶圆装片方法进一步包含以下步骤：
S7、判定晶圆装载成功需满足两个必要条件：1)第二压力介质腔体的 气压值上升，表明晶圆被转移装载至抛光头上；且2)所述基座的水压检测传感器的水压降低，确认晶圆已离开基座，完成装载动作；若两个条件不能同时满足，则说明吸附膜与晶圆之间未紧密贴合或晶圆在被抬升过程中从吸附膜上掉落，即晶圆装载失败，则循环进行晶圆装载过程，直至晶圆装载成功。
本发明又提供了一种CMP工艺的晶圆装载***，包含用于装载晶圆的抛光头、如上文所述的晶圆装载支架，所述抛光头包含：第一压力介质腔体，通过压力调节来控制所述抛光头的垂直方向运动；第二压力介质腔体，加载有设定压力并保持腔体密闭；一个或多个第三压力介质腔体，与所述第二压力介质腔体通过导通阀相连；吸附膜，用于吸附边缘高中心低的承片座上的晶圆，所述第三压力介质腔体与其下方的所述吸附膜接触，通过压力调节来控制所述吸附膜的状态；其中，当向所述第三压力介质腔体注入气体，所述吸附膜向所述抛光头的外方向产生圆弧形形变，所述吸附膜与所述承片座上的晶圆接触，并将所述第三压力介质腔体由加压状态改变为真空状态，所述吸附膜和所述晶圆被吸附至所述抛光头。
与现有技术相比，本发明的有益效果为：(1)本发明的支架承片座设计为边缘高中心低的盆形托架结构，在装载过程中避免了晶圆下表面受承片座挤压而引入划痕、颗粒等缺陷，且是由中心向四周逐步与吸附膜紧密贴合，可有效排空晶圆与承片座之间的空气；(2)本发明采用的晶圆装载工艺方法更为简洁，无需对晶圆边缘加压，时间短，效率高，且实施效果佳，保证了晶圆在装载过程中的成功率；(3)本发明的支架和抛光头内部的压力监测装置可有效检测晶圆的吸附状态，检测晶圆在装载过程中的状态，即晶圆装载成功后的判定依据转化为水压数值和气密腔体的气压值变化，该晶圆状态的判定方法简易快速，准确度高。
附图的简要说明
图1为本发明的晶圆装载支架的剖视图；
图2为本发明的晶圆装载支架的俯视图；
图3A为本发明的抛光头立体结构示意图；
图3B为本发明的抛光头平面结构示意图；
图4为本发明的抛光头的吸附膜形变示意图；
图5为本发明的承片座抬升晶圆示意图；
图6为本发明的吸附膜吸附晶圆示意图；
图7为本发明的晶圆装载失败示意图；
图8为本发明的晶圆装载流程示意图。
实现本发明的最佳方式
通过阅读参照图1～图8所作的对非限制性实施例所作的详细描述，本发明的特征、目的和优点将会变得更明显。参见示出本发明实施例的图1～图8，下文将更详细的描述本发明。然而，本发明可以由许多不同形式实现，并且不应解释为受到在此提出的实施例的限制。
如图1-图2所示，本发明的晶圆装载支架包含基座1、升降板2、限位块3和承片座4。圆形基座1用于承载限位块3和承片座4，限位块3和承片座4位于基座1上方，且限位块3沿承片座4边缘将该承片座4包围，该限位块3可以在装载过程中保证晶圆7位置的精确度，因为承片座4在承接晶圆7位置的高度略低于限位块3，从而保证了晶圆7被准确放置于承片座4内。
承片座4由边缘高、中心低的盆形托架结构构成，该承片座4的下端通过若干个止动螺栓401与升降板2的上端连接，用以控制承片座4的升降动作，从而在晶圆装载位置进一步抬升晶圆7，但是本发明不局限于通过该止动螺栓401与升降板2连接。
如图2所示，基座1上沿着周向均匀地安装有若干个去离子水喷嘴，每个去离子水喷嘴对应地与水压检测传感器5连接，将对应的水压信号传入水压检测传感器5，本发明通过该水压检测传感器5的水压变化可以实时检测晶圆7在承片座4上的存在状态。一般地，去离子水喷嘴的数量不小于3个。
如图3A和图3B结合所示，本发明的抛光头6包含第一压力介质腔体61、第二压力介质腔体62、吸附膜64、与吸附膜64接触的压力介质腔体63(记作第三压力介质腔体63)和导通阀65。第一压力介质腔体61、第二压力介质腔体62、第三压力介质腔体63和吸附膜64由上至下依次布置，其中第二压力介质腔体62表面的部分区域暴露于第三压力介质腔体63中。
第一压力介质腔体61通过压力调节可控制抛光头的垂直方向运动。具体地，当向该第一压力介质腔体61的腔体内注入一压力介质(例如空气)时，则第一压力介质腔体61膨胀并使抛光头向下运动；当对第一压力介质腔体61执行抽真空操作时，第一压力介质腔体61体积收缩，则抛光头向上抬起。其中，抛光头在晶圆7装载完成后，第一压力介质腔体61被压缩，抛光头被旋转平移至抛光单元上方，而后向该腔体内注入一压力介质使抛光头下降，晶圆7在抛光单元上抛光，抛光完成后抛光头向上抬起并被旋转平移至晶圆装载支架上方完成卸载动作。
第二压力介质腔体62和第三压力介质腔体63通过一导通阀65相连。其中，导通阀65由下部的隔板和上部的伸缩弹簧组成，该导通阀65经物理触碰(即下文所指的吸附膜64在真空作用下向内发生形变)后，将导通阀65向上顶起，受压的隔板会压缩弹簧，则导通阀65向内开启使得两腔体(第二压力介质腔体62和第三压力介质腔体63)导通。
吸附膜64为密闭弹性膜，第三压力介质腔体63通过压力调节可控制其下方的吸附膜64的状态。
本发明的第三压力介质腔体63的数量不限于一个，还可以是多个，即本发明可通过一个或多个第三压力介质腔体63来调节不同区域的气压可更加快速、精确地控制吸附膜64形变范围和状态。
如图4所示，对第三压力介质腔体63注入一定量气体(压力值0.1psi≤P3≤8.0psi，加压时间200ms≤t3≤8000ms)，则吸附膜64在压力介质作用下向抛光头6外方向产生一定的圆弧形形变(如图4中数字标记64a所示)，因为当向第三压力介质腔体63注入一定量气体后，第三压力介质腔体63的气压增加，且高于外界大气压力，将弹性吸附膜64向外挤压形成圆弧形形变，随后，对第二压力介质腔体62加载一定压力并保持腔体密闭的状态(例如，压力范围0.1psi≤P2≤9.0psi)。
如图5所示，晶圆7被放置于承片座4内，基座1上升带动晶圆7抬升(例如，基座升降高度5mm≤Ha≤150mm)，抬升后的晶圆7会与其上方的吸附膜64进行接触。
其中，当将晶圆7置入承片座4后，正常情况下基座1上的去离子水喷嘴的出口会被晶圆7覆盖，则去离子水喷嘴的水管水压上升，将对应的水压 上升信号传入水压检测传感器5。所以，当每一个水压检测传感器5的水压信号为上升水压信号时，则表示晶圆7在承片座4上的放置位置准确，否则，则表明晶圆7在承片座4上的放置位置有误。
然后，承片座4通过升降板2在当前高度位置继续上升，即继续抬升晶圆7的高度(例如该承片座4的升降高度0mm≤Hb≤30mm)，由于承片座4在继续抬升过程中会挤压吸附膜，因为吸附膜64受到第三压力介质腔体63向下的压力，承片座4向上抬升对吸附膜64产生向上的压力，结果导致吸附膜64受到挤压并且与承片座4上的晶圆7接触面积增大，此时吸附膜64在晶圆7和压力介质的共同作用下产生一定形变，该形变首先接触晶圆7中心位置并逐步向外延伸直至与晶圆7完全接触，有效排除晶圆7与承片座之间的空气。
其中，在晶圆7与吸附膜64的完全接触过程中，晶圆7中心受到的压力最大而边缘受到的压力较小(因为晶圆7中心受到第三压力介质腔体63向下的压力最大)，由于承片座4设计为边缘高、中心低的盆形托架结构，使得晶圆7的边缘位置与承片座4接触起到支撑作用而中心压力较大的区域不与承片座4接触，从而避免了晶圆7下表面受压而产生划痕缺陷。所以，这种通过吸附膜形变由中心向四周延伸排空气的方法设计合理，装载工艺简单，且无需对晶圆7边缘加压，时间短，效率高，且实施效果佳，保证了晶圆7在装载过程中的成功率。
如图6所示，待吸附膜64将晶圆7完全覆盖后，将第三压力介质腔体63由加压状态改变为真空状态，因吸附膜64与晶圆7之间完全紧密贴合，两者同时被吸附在抛光头6的表面，完成装载晶圆动作。此时，第二压力介质腔体62受到第三压力介质腔体63的挤压(因为第三压力介质腔体63由加压变为真空状态，向内形变使第二压力介质腔体62受到挤压)，则第二压力介质腔体62腔体的容积变小导致气压数值上升，表明晶圆装载至抛光头。同时，承片座4上的晶圆7顺利被转移至抛光头6，则导致水压检测传感器5的水压下降，确认晶圆已离开基座。因此，水压检测传感器5的水压下降和第二压力介质腔体62的气压数值上升作为判定晶圆装载成功的依据，即这两个条件均满足才表示装载成功。
如图7所示，当吸附膜64与晶圆7之间未紧密贴合时，晶圆7未被吸附 膜64吸附抬升，此时水压检测传感器5的水压保持不变；或者，当晶圆7在被抬升过程中从吸附膜64上掉落，此时第三压力介质腔体63的腔体内转变为真空状态后与外界大气压产生压差，致使吸附膜64向抛光头6内方向发生形变，形变后的吸附膜64触碰导通阀65下部的隔板，受压隔板会压缩导通阀65上部的弹簧使导通阀65向内开启，使得第二压力介质腔体62和第三压力介质腔体63导通(为了保证第三压力介质腔体的真空与大气压差产生合理形变触碰导通阀，可设定真空数值-9.0psi≤Vac≤-0.1psi)，则第二压力介质腔体62内的气体通过第三压力介质腔体63连接的真空发生器被抽至真空状态。因此，水压检测传感器5的水压不变或第二压力介质腔体62变为真空状态均可作为晶圆装载失败的判定依据，并且晶圆在装载过程中的状态都可检测。
以上，通过合理设计检测水压检测传感器5水压数值及第二压力介质腔体62的状态来判定晶圆装载状态的设施判定依据简便快速，安全性及准确度高。
如图3A和图3B结合所示，本发明中的吸附膜64的内表面紧贴带有多个圆孔的支撑架，因为若没有该支撑架存在，吸附膜64在真空操作时会整体向内发生形变，触碰导通阀65，即该支撑架的作用是为了防止吸附膜64被整体往腔体内部吸附，圆孔的设置是为了让部分区域可以向内形变对晶圆7产生吸附作用，并使向内的形变在晶圆7掉落时可以触碰导通阀65。
如图8所示，本发明提供了一种CMP工艺的晶圆装片方法，该方法包含以下步骤：
S1、将晶圆置于晶圆装载支架的承片座上；
S2、对抛光头的第三压力介质腔体注入气体使得抛光头的吸附膜向抛光头外方向产生圆弧形形变；
S3、对抛光头的第二压力介质腔体加载设定压力并保持腔体密闭的状态；
S4、装载晶圆的承片座随着基座抬升而上升至装载位置，晶圆与其上方的所述吸附膜接触；
S5、承片座在基座抬升晶圆基础上可进一步上升，继续抬升晶圆，承片座向上抬升对吸附膜产生向上的压力，吸附膜产生形变，该形变先接触晶圆 中心位置并逐步向外延伸直至与晶圆完全接触，排尽晶圆与吸附膜之间的空气；
S6、将与吸附膜接触的第三压力介质腔体由加压状态转为真空状态，吸附膜和晶圆被吸附至抛光头。
S7、判定晶圆装载成功需满足两个必要条件：1)第二压力介质腔体的气压值上升，表明晶圆被转移装载至抛光头上；且2)基座的水压检测传感器的水压降低，确认晶圆已离开基座，完成装载动作。若这两个条件不能同时满足，则说明吸附膜与晶圆之间未紧密贴合或晶圆在被抬升过程中从吸附膜上掉落，即晶圆装载失败，则跳转至步骤S2，继续进行，直至晶圆装载成功。
综上所述，本发明采用可升降的晶圆装载支架和包含多个压力介质腔体的抛光头，晶圆装载过程中，抛光头的吸附膜在压力下产生圆弧形形变，将晶圆装载支架承片座上的晶圆抬升至装载位置并与吸附膜接触，承片座由边缘高中心低的盆形托架构成，承片座进一步抬升晶圆，晶圆在承片座和吸附膜的压力下由中心向四周逐步与吸附膜紧密贴合，排空两者间的空气，在此过程，晶圆中心区域不与承片座接触，避免晶圆在装载过程中产生划痕；此时对接触吸附膜的压力介质腔体施加真空，晶圆与吸附膜在真空下将晶圆转移至抛光头，完成装载，晶圆装载支架和抛光头内的压力监测装置可有效检测晶圆装载状态。
尽管本发明的内容已经通过上述优选实施例作了详细介绍，但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。

Claims (10)

  1. 一种CMP工艺的晶圆装载支架，包含基座(1)及位于其上的承片座(4)，所述承片座(4)用于放置晶圆，所述晶圆装载支架与用于装载晶圆的抛光头相配合，所述抛光头包括控制所述抛光头垂直方向运动的第一压力介质腔体(61)、通过加载压力保持腔体密闭的第二压力介质腔体(62)、与所述第二压力介质腔体(62)相连的第三压力介质腔体(63)以及用于吸附晶圆并与所述第三压力介质腔体(63)接触的吸附膜(64)，其特征在于，
    所述承片座(4)在所述基座(1)上升时带动所述晶圆抬升，并在与已产生抛光头外方向圆弧形形变的所述吸附膜(64)接触后，所述承片座(4)可进一步抬升使所述晶圆与所述吸附膜(64)贴合；
    所述承片座(4)为边缘高中心低的盆形托架结构，使得所述晶圆与所述吸附膜(64)完全接触过程中，所述晶圆的边缘与所述承片座(4)接触且所述晶圆的中间区域不与所述承片座(4)接触，避免晶圆下表面受承片座挤压而引入划痕、颗粒等缺陷。
  2. 如权利要求1所述的晶圆装载支架，其特征在于，
    所述承片座(4)下部连接有升降板(2)，所述承片座(4)通过所述升降板(2)继续上升以进一步抬升晶圆的高度，所述承片座(4)在继续抬升过程中挤压已产生圆弧形形变的所述吸附膜(64)且与所述承片座(4)上的晶圆接触面积增大，此时所述吸附膜(64)产生形变，该形变先接触晶圆中心位置并逐步向外延伸直至与晶圆完全接触，排除晶圆与承片座之间的空气。
  3. 如权利要求2所述的晶圆装载支架，其特征在于，
    所述承片座(4)的下部通过若干个止动螺栓与所述升降板(2)的上部连接，用以控制所述承片座(4)的升降动作。
  4. 如权利要求2或3所述的晶圆装载支架，其特征在于，
    所述基座的升降高度为5mm≤Ha≤150mm，所述承片座(4)的升降高度0mm≤Hb≤30mm。
  5. 如权利要求1所述的晶圆装载支架，其特征在于，
    所述抛光头的所述第三压力介质腔体(63)设置为一个或多个，用以调节不同区域的气压，控制所述抛光头的吸附膜(64)形态。
  6. 如权利要求1所述的晶圆装载支架，其特征在于，
    所述抛光头的所述第二压力介质腔体(62)加载的设定压力为0.1psi≤P2≤9.0psi；
    所述抛光头的所述第三压力介质腔体(63)注入有气体使所述吸附膜(64)产生圆弧形形变的压力值为0.1psi≤P3≤8.0psi，加压时间为200ms≤t3≤8000ms。
  7. 如权利要求1所述的晶圆装载支架，其特征在于，
    当所述抛光头的所述吸附膜(64)与所述承片座(4)上的晶圆接触后将所述第三压力介质腔体(63)由加压状态改变为真空状态，所述吸附膜和所述晶圆被吸附至所述抛光头；
    所述第三压力介质腔体(63)改变为真空状态的真空数值为-9.0psi≤Vac≤-0.1psi。
  8. 一种基于如权利要求1-7任意一项中所述的晶圆装载支架的晶圆装片方法，其特征在于，该方法包含以下步骤：
    S1、将晶圆置于晶圆装载支架的承片座上；
    S2、对所述抛光头的第三压力介质腔体注入气体使得所述抛光头的吸附膜向抛光头外方向产生圆弧形形变；
    S3、对抛光头的第二压力介质腔体加载设定压力并保持腔体密闭的状态；
    S4、装载晶圆的承片座随着基座抬升而上升至装载位置，晶圆与其上方的所述吸附膜接触；
    S5、所述承片座在基座抬升晶圆基础上可进一步上升，继续抬升晶圆，所述承片座向上抬升对吸附膜产生向上的压力，吸附膜产生形变，该形变先接触晶圆中心位置并逐步向外延伸直至与晶圆完全接触，排尽晶圆与吸附膜之间的空气；
    S6、将与所述吸附膜接触的第三压力介质腔体由加压状态转为真空状态，所述吸附膜和所述晶圆被吸附至所述抛光头。
  9. 如权利要求8所述的晶圆装片方法，其特征在于，进一步包含以下步骤：
    S7、判定晶圆装载成功需满足以下两个必要条件：1)所述第二压力介质腔体的气压值上升，表明晶圆被转移装载至抛光头上，且2)所述基座的水压检测传感器的水压降低，确认晶圆已离开基座，完成装载动作；若两个条件不能同时满足，则说明吸附膜与晶圆之间未紧密贴合或晶圆在被抬升过程中从吸附膜上掉落，即晶圆装载失败，则循环进行晶圆装载过程，直至晶圆装载成功。
  10. 一种CMP工艺的晶圆装载***，其特征在于，包含用于装载晶圆的抛光头、如权利要求1-7任意一项所述的晶圆装载支架，所述抛光头包含：第一压力介质腔体(61)，通过压力调节来控制所述抛光头的垂直方向运动；第二压力介质腔体(62)，加载有设定压力并保持腔体密闭；一个或多个第三压力介质腔体(63)，与所述第二压力介质腔体(62)通过导通阀(65)相连；吸附膜(64)，用于吸附边缘高中心低的承片座(4)上的晶圆，所述第三压力介质腔体(63)与其下方的所述吸附膜(64)接触，通过压力调节来控制所述吸附膜(64)的状态；其中，当向所述第三压力介质腔体(63)注入气体，所述吸附膜(64)向所述抛光头的外方向产生圆弧形形变，所述吸附膜(64)与所述承片座(4)上的晶圆接触，并将所述第三压力介质腔体(63)由加压状态改变为真空状态，所述吸附膜(64)和所述晶圆被吸附至所述抛光头。
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