WO2019225319A1 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
WO2019225319A1
WO2019225319A1 PCT/JP2019/018443 JP2019018443W WO2019225319A1 WO 2019225319 A1 WO2019225319 A1 WO 2019225319A1 JP 2019018443 W JP2019018443 W JP 2019018443W WO 2019225319 A1 WO2019225319 A1 WO 2019225319A1
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WO
WIPO (PCT)
Prior art keywords
lid
cooling body
chamber
cooling
heat treatment
Prior art date
Application number
PCT/JP2019/018443
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
賢一 重冨
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2020521144A priority Critical patent/JP6937906B2/ja
Priority to KR1020207035452A priority patent/KR20210011395A/ko
Priority to CN201980031901.8A priority patent/CN112119482B/zh
Publication of WO2019225319A1 publication Critical patent/WO2019225319A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Definitions

  • the present disclosure relates to a substrate processing apparatus.
  • This disclosure has been made in view of the above circumstances, and aims to shorten the temperature lowering time of the lid with a simple configuration.
  • a substrate processing apparatus includes a heat plate that places and heats a substrate to be processed, a lid body that can be disposed so as to surround a placement surface of the substrate in the heat plate, and a lid body And an elevating mechanism configured to be able to move up and down, and a cooling body configured to be able to cool the lid when the lid approaches or contacts.
  • the lid surrounding the hot plate can be moved up and down by an elevating mechanism, and the lid can be cooled by approaching or contacting the cooling body.
  • the lid can be cooled by a simple configuration. It becomes possible.
  • the temperature lowering time of the lid can be shortened with a simple configuration.
  • the cooling body is provided above the lid body, and may be close to or in contact with the upper surface of the lid body moved upward by the lifting mechanism. Thereby, the lid can be appropriately cooled by the cooling body when the lid is opened (moved upward) after the heat treatment.
  • the cooling body includes a temperature adjustment plate that delivers the substrate between the hot plate and the external transfer arm and adjusts the temperature of the substrate to a predetermined temperature.
  • the temperature adjustment plate is formed at the lower end of the lid. It may be close to or in contact with the part. As a result, the lid can be cooled using a temperature adjustment plate already provided for transporting and cooling the substrate, and the lid can be cooled with a simpler configuration.
  • the heat treatment module further includes a bottom wall portion on which a support portion for supporting the heat plate is placed, and a heat treatment module having a heat plate, a lid, an elevating mechanism, and a bottom wall portion is arranged in a plurality of stages above and below, and the lower heat treatment module
  • the cooling body may include the bottom wall portion of the upper heat treatment module.
  • the upper bottom wall portion functions as a cooling body, so that the lid body can be cooled using the already provided bottom wall portion in a configuration in which the heat treatment modules are arranged in multiple stages in the vertical direction.
  • the cooling of the lid can be realized with a simpler configuration.
  • the cooling body raising / lowering part comprised so that raising / lowering of the cooling body may be further provided. Thereby, it becomes possible to move a cooling body and cooling of a cover body can be implement
  • An elastic body provided between at least one of the lid body and the cooling body and disposed between the lid body and the cooling body while contacting both the lid body and the cooling body when the lid body and the cooling body are close to each other. Furthermore, you may provide.
  • the elastic body when the lid body is close to the cooling body, the elastic body is interposed between the lid body and the cooling body, and the lid body is brought close to the cooling body substantially in parallel. It becomes easy. Thereby, the whole cover body can be cooled uniformly.
  • the control unit moves the lid close to or in contact with the cooling body, the control unit moves the lid to a cooling position different from the rising position when the lid is raised at the end of the heat treatment by the hot plate.
  • the lifting mechanism may be controlled.
  • a temperature sensor for measuring the temperature of the lid body and the control unit determines whether or not to end the cooling of the lid body by the cooling body based on the temperature of the lid body measured by the temperature sensor;
  • the temperature lowering time of the lid can be shortened with a simple configuration.
  • FIG. 1 is a perspective view showing a schematic configuration of a substrate processing system according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along line II-II in FIG.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 2.
  • It is a schematic longitudinal cross-sectional view which shows an example of the heat processing unit.
  • It is a figure which shows typically the cooling image by a cooling body. It is a figure explaining the cooling structure of a cooling body.
  • It is a hard wafer block diagram of a controller.
  • It is a flowchart of a chamber cooling process.
  • It is a figure which shows typically the heat processing unit which concerns on 2nd Embodiment.
  • It is a figure which shows typically the heat processing unit which concerns on 3rd Embodiment.
  • It is a figure explaining the cooling structure of a cooling body.
  • the substrate processing system 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on a substrate.
  • the substrate to be processed is, for example, a semiconductor wafer W.
  • the photosensitive film is, for example, a resist film.
  • the substrate processing system 1 includes a coating / developing device 2 and an exposure device 3.
  • the exposure apparatus 3 performs an exposure process on the resist film formed on the wafer W. Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as immersion exposure.
  • the coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.
  • the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.
  • the carrier block 4 introduces the wafer W into the coating / developing apparatus 2 and derives the wafer W from the coating / developing apparatus 2.
  • the carrier block 4 can support a plurality of carriers 11 for the wafer W and incorporates a delivery arm A1.
  • the carrier 11 accommodates a plurality of circular wafers W, for example.
  • the delivery arm A ⁇ b> 1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier 11.
  • the processing block 5 has a plurality of processing modules 14, 15, 16, and 17.
  • the processing modules 14, 15, 16, and 17 include a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm A3 that transfers the wafer W to these units.
  • the processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2.
  • the liquid processing unit U1 applies the processing liquid to the surface of the wafer W.
  • the heat treatment unit U2 includes, for example, a hot plate and a cooling plate, heats the wafer W with the hot plate, and cools the heated wafer W with the cooling plate to perform the heat treatment.
  • the processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2.
  • the liquid processing unit U1 of the processing module 14 applies a processing liquid for forming a lower layer film on the wafer W.
  • the heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the lower layer film.
  • the processing module 15 forms a resist film on the lower layer film by the liquid processing unit U1 and the heat treatment unit U2.
  • the liquid processing unit U1 of the processing module 15 applies a processing liquid (coating liquid) for forming a resist film on the lower layer film.
  • the heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film. Details of the liquid processing unit U1 of the processing module 15 will be described later.
  • the processing module 16 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat treatment unit U2.
  • the liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the resist film.
  • the heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.
  • the processing module 17 develops the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2.
  • the liquid processing unit U1 of the processing module 17 applies a developing processing liquid (developing liquid) on the exposed surface of the wafer W, and then rinses it with a cleaning processing liquid (rinsing liquid) to thereby remove the resist.
  • the film is developed.
  • the heat treatment unit U2 of the processing module 17 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), and the like.
  • a shelf unit U10 is provided on the carrier block 4 side in the processing block 5.
  • the shelf unit U10 is partitioned into a plurality of cells arranged in the vertical direction.
  • An elevating arm A7 is provided in the vicinity of the shelf unit U10.
  • the raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10.
  • a shelf unit U11 is provided on the interface block 6 side in the processing block 5.
  • the shelf unit U11 is partitioned into a plurality of cells arranged in the vertical direction.
  • the interface block 6 delivers the wafer W to and from the exposure apparatus 3.
  • the interface block 6 includes a delivery arm A8 and is connected to the exposure apparatus 3.
  • the delivery arm A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.
  • the controller 100 controls the coating / developing apparatus 2 so as to execute the coating / developing process in the following procedure, for example.
  • the controller 100 controls the transfer arm A1 so as to transfer the wafer W in the carrier 11 to the shelf unit U10, and controls the lift arm A7 so as to place this wafer W in the cell for the processing module 14.
  • the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14, and forms a lower layer film on the surface of the wafer W.
  • the liquid processing unit U1 and the heat treatment unit U2 are controlled.
  • the controller 100 controls the transfer arm A3 so as to return the wafer W on which the lower layer film is formed to the shelf unit U10, and controls the lifting arm A7 so as to place the wafer W in the cell for the processing module 15.
  • the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15, and forms a resist film on the lower layer film of the wafer W.
  • the liquid processing unit U1 and the heat treatment unit U2 are controlled.
  • the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the lift arm A7 so as to place the wafer W in the cell for the processing module 16.
  • the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and the liquid processing unit so as to form an upper layer film on the resist film of the wafer W.
  • U1 and heat treatment unit U2 are controlled.
  • the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the lifting arm A7 so as to place the wafer W in the cell for the processing module 17.
  • the controller 100 directly controls the transfer arm A6 so as to transfer the wafer W of the shelf unit U10 to the shelf unit U11, and controls the transfer arm A8 so as to send this wafer W to the exposure apparatus 3. Thereafter, the controller 100 controls the transfer arm A8 so that the wafer W subjected to the exposure process is received from the exposure apparatus 3 and returned to the shelf unit U11.
  • the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and the liquid processing unit U1 and the processing unit U1 and the resist film of the wafer W are subjected to development processing.
  • the heat treatment unit U2 is controlled.
  • the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 and the delivery arm A1 to return the wafer W into the carrier 11.
  • the coating / developing process is completed.
  • the specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 exemplified above. Any substrate processing apparatus may be used as long as it includes a liquid processing unit U1 for forming a film (liquid processing unit U1 of the processing modules 14, 15, and 16) and a controller 100 that can control the unit. Good.
  • the heat treatment unit U2 of the processing module 15 includes a housing 90, a temperature adjustment mechanism 50, a heating mechanism 30, a cooling body 70 (see FIG. 5), and an elastic body 72 (see FIG. 6). And a temperature sensor 80 and a controller 100 (control unit). 4 to 6 show only a part of the configuration of the heat treatment unit U2, and do not show the entire configuration of the heat treatment unit U2.
  • the housing 90 is a processing container that houses the heating mechanism 30 and the temperature adjustment mechanism 50.
  • An entrance 91 for the wafer W is opened on the side wall of the housing 90.
  • a floor plate 92 that divides the inside of the housing 90 into an upper region that is a movement region of the wafer W and a lower region is provided in the housing 90.
  • the temperature adjusting mechanism 50 is configured to deliver (carry) the wafer W between the hot plate 34 and the external transfer arm A3 (see FIG. 3) and adjust the temperature of the wafer W to a predetermined temperature.
  • the temperature adjustment mechanism 50 includes a temperature adjustment plate 51 and a connection bracket 52.
  • the temperature adjustment plate 51 is a plate that adjusts the temperature of the mounted wafer W. Specifically, the wafer W heated by the hot plate 34 of the heating mechanism 30 is mounted and the wafer W is cooled to a predetermined temperature. It is a cool plate to do.
  • the temperature adjustment plate 51 is formed in a substantially disk shape.
  • the temperature adjustment plate 51 is made of, for example, a metal having a high thermal conductivity, such as aluminum, silver, or copper, and may be made of the same material from the viewpoint of preventing deformation due to heat. Inside the temperature adjustment plate 51, a cooling flow path (not shown) for flowing cooling water and / or cooling gas is formed.
  • connection bracket 52 is connected to the temperature adjustment plate 51 and is driven by the drive mechanism 53 controlled by the controller 100 to move in the housing 90. More specifically, the connection bracket 52 is movable along a guide rail (not shown) extending from the carry-in port 91 of the housing 90 to the vicinity of the heating mechanism 30. The temperature adjustment plate 51 can be moved from the carry-in port 91 to the heating mechanism 30 by the connection bracket 52 moving along a guide rail (not shown).
  • the connection bracket 52 is made of, for example, a metal having a high thermal conductivity such as aluminum, silver, or copper.
  • the heating mechanism 30 is configured to heat the wafer W.
  • the heating mechanism 30 includes a support base 31, a heat plate 34, a chamber 32 (lid body), an elevating mechanism 33, a support pin 35, and an elevating mechanism 36.
  • the support base 31 is a member having a cylindrical shape in which a concave portion is formed in the central portion.
  • the support base 31 supports the heat plate 34.
  • the hot plate 34 is fitted in the concave portion of the support base 31 and is configured to be able to place the processing target wafer W, and heats the placed wafer W.
  • the hot plate 34 has a heater for heating the wafer W.
  • the heater is composed of a resistance heating element, for example.
  • the chamber 32 is a lid configured to be disposed so as to surround the mounting surface of the wafer W on the hot platen 34.
  • the chamber 32 has a top plate portion 32a and a foot portion 32b.
  • the top plate portion 32a is a disk-shaped portion having a diameter similar to that of the support base 31, and is disposed so as to face the mounting surface of the heat plate 34 in the vertical direction.
  • the foot portion 32b is a portion extending downward from the outer edge of the top plate portion 32a.
  • An exhaust duct 37 is connected to the top of the top plate portion 32a. The exhaust duct 37 exhausts the inside of the chamber.
  • the elevating mechanism 33 is configured to elevate and lower the chamber 32 according to the control of the controller 100.
  • the space for performing the heat treatment of the wafer W is opened, and when the chamber 32 is lowered, the space for performing the heat treatment is closed.
  • the support pins 35 are members that extend through the support base 31 and the hot plate 34 and support the wafer W from below.
  • the support pins 35 are moved up and down to place the wafer W at a predetermined position.
  • the support pins 35 are configured to deliver the wafer W to and from the temperature adjustment plate 51 that transports the wafer W.
  • three support pins 35 are provided at equal intervals in the circumferential direction.
  • the elevating mechanism 36 is configured to raise and lower the support pin 35 in accordance with the control of the controller 100.
  • the elevating mechanism 36 is configured to be able to raise and lower the wafer W (specifically, support pins 35 that support the wafer W) so that the wafer W is brought close to the hot plate 34 and the wafer W is placed on the hot plate 34. Has been.
  • the cooling body 70 is a member configured to be able to cool the chamber 32 when the chamber 32 approaches or comes into contact with the cooling body 70.
  • the cooling body 70 is a disk-shaped member having the same diameter as the top plate portion 32a of the chamber 32. It is a member.
  • a cooling flow path 71 for circulating a cooling medium (for example, cooling water and / or cooling gas) is formed inside the cooling body 70.
  • the cooling body 70 is provided above the chamber 32, and approaches or contacts the upper surface of the top plate portion 32 a of the chamber 32 moved upward by the elevating mechanism 33.
  • FIG. 5C shows a state in which the top surface of the top plate portion 32a of the chamber 32 moved upward is close to or in contact with the cooling body 70.
  • the position of the chamber 32 (cooling position) in this state is the position of the chamber 32 during the heat treatment (see FIG. 5A) and the position of the chamber 32 when the chamber 32 is opened when cooling is not performed ( This is different from any of FIG. That is, for example, the cooling body 70 is disposed above the position of the chamber 32 when the chamber 32 is opened when cooling is not performed (see FIG. 5B) (see FIG. 5C). Only when the chamber 32 is raised to the cooling position, it is arranged so as to be close to or in contact with the upper surface of the top plate portion 32a.
  • the elastic body 72 is provided on the lower surface of the cooling body 70, and the chamber 32 and the cooling body 70 are in contact with both the chamber 32 and the cooling body 70 when the chamber 32 and the cooling body 70 come close to each other.
  • a plurality of elastic bodies 72 are arranged at equal intervals on the lower surface of the cooling body 70.
  • the upper surface of the top plate portion 32a of the chamber 32 does not directly contact the cooling body 70 but approaches (closes to) the cooling body 70 via the elastic body 72. It becomes.
  • the separation distance between the chamber 32 and the cooling body 70 is, for example, about 0.1 mm to 10 mm.
  • a gas having a high thermal conductivity such as helium may be injected at the time of cooling.
  • the temperature sensor 80 is a sensor that is provided on the top 32 a of the chamber 32 and measures the temperature in the chamber 32.
  • a plurality of temperature sensors 80 may be provided on the top plate portion 32a, or only one temperature sensor 80 may be provided.
  • the temperature sensor 80 outputs the measured temperature of the chamber 32 to the controller 100.
  • the controller 100 includes a chamber open / close control unit 101, a support pin lifting / lowering control unit 102, and a plate movement control unit 103 as functional modules.
  • the chamber opening / closing control unit 101 controls the lifting mechanism 33 so that the chamber 32 opens and closes.
  • the chamber opening / closing control unit 101 determines, for example, whether the heat treatment temperature of the wafer W is higher than the heat treatment temperature of the next processing lot at the timing when the heat treatment of the wafer W is completed. When it is determined that the chamber opening / closing control unit 101 is high, the chamber opening / closing control unit 101 controls the elevating mechanism 33 so that the chamber 32 approaches or contacts the cooling body 70.
  • the chamber opening / closing control unit 101 When the chamber opening / closing control unit 101 is brought close to or in contact with the cooling body 70, the chamber opening / closing control unit 101 opens a normal position when the chamber 32 is opened (raised) at the end of the heat treatment by the hot plate 34 (FIG. 5B).
  • the elevating mechanism 33 is controlled so that the chamber 32 is moved to a cooling position (see FIG. 5C) different from that of (see FIG. 5).
  • the chamber opening / closing control unit 101 moves the raising / lowering mechanism 33 so as to move the chamber 32 to a cooling position above the normal ascent position. Control.
  • the chamber opening / closing control unit 101 acquires the temperature of the chamber 32 from the temperature sensor 80 and ends the cooling of the chamber 32 by the cooling body 70 based on the temperature. It is determined whether or not to do. For example, the chamber opening / closing control unit 101 may determine that the cooling is to be terminated when the temperature has reached a predetermined target temperature (or target temperature range). Note that such a target temperature can be easily set by acquiring in advance a relational expression of the temperature of the chamber 32 with respect to the temperature of the hot plate 34. When it is determined that the cooling is finished, the chamber opening / closing control unit 101 controls the elevating mechanism 33 so that the chamber 32 is separated from the cooling body 70.
  • a predetermined target temperature or target temperature range
  • the chamber opening / closing control unit 101 determines that the cooling is finished, for example, the chamber 32 is lowered from the cooling position (see FIG. 5C) to the normal ascending position (see FIG. 5B).
  • the lifting mechanism 33 is controlled.
  • the chamber opening / closing control unit 101 may cool the chamber 32 by the cooling body 70 for a predetermined time without using the measurement value of the temperature sensor 80.
  • the support pin elevating control unit 102 controls the elevating mechanism 36 so that the wafer W is transferred between the temperature adjustment plate 51 and the support pins 35 by elevating the support pins 35.
  • the support pin lifting / lowering control unit 102 controls the lifting / lowering mechanism 36 so that the support pins 35 that support the wafer W are lowered and the wafer W is placed on the hot plate 34 from the support pins 35.
  • the plate movement control unit 103 controls the drive mechanism 53 so that the temperature adjustment plate 51 moves in the housing 90.
  • the controller 100 includes one or a plurality of control computers.
  • the controller 100 includes a circuit 120 illustrated in FIG.
  • the circuit 120 includes one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125.
  • the input / output port 124 inputs and outputs electrical signals between the lifting mechanism 33, the lifting mechanism 36, the drive mechanism 53, and the temperature sensor 80.
  • the timer 125 measures the elapsed time by, for example, counting a reference pulse with a fixed period.
  • the storage 123 includes a computer-readable recording medium such as a hard disk.
  • the recording medium records a program for executing a substrate processing procedure described later.
  • the recording medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk.
  • the memory 122 temporarily records the program loaded from the recording medium of the storage 123 and the calculation result by the processor 121.
  • the processor 121 configures each functional module described above by executing the program in cooperation with the memory 122.
  • each functional module of the controller 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the functional modules are integrated.
  • ASIC Application Specific Integrated Circuit
  • the flowchart of FIG. 8 shows a chamber cooling processing procedure that is started, for example, when the heating processing of the wafer W is completed.
  • the controller 100 determines whether or not the heat treatment temperature of the wafer W is higher than the heat treatment temperature of the next processing lot (step S1). If it is determined in S1 that it is not high, the process ends. On the other hand, when it is determined that the temperature is high in S1, that is, when it is determined that the set temperature of the hot plate 34 needs to be lowered and the temperature of the chamber 32 needs to be lowered, the controller 100 sets the cooling position (the chamber 32 is a cooling body). The elevating mechanism 33 is controlled so as to raise the chamber to a position close to or in contact with 70 (step S2). Thereby, cooling of the chamber 32 by the cooling body 70 is started.
  • the controller 100 acquires the temperature of the chamber 32 from the temperature sensor 80, and whether or not the chamber 32 has reached the target temperature by cooling by the cooling body 70 (whether cooling of the chamber 32 by the cooling body 70 is finished) or not. Is determined (step S3). If it is determined in S3 that it has not reached, the determination in step S3 is performed again after a predetermined time has elapsed. On the other hand, when it determines with having reached
  • the heat treatment unit U2 includes a hot plate 34 that places and heats the wafer W to be processed, and a chamber 32 that can be disposed so as to surround the wafer W placement surface of the hot plate 34, An elevating mechanism 33 configured to be able to move up and down the chamber 32 and a cooling body 70 configured to be able to cool the chamber 32 when the chamber 32 approaches or comes into contact therewith.
  • the chamber 32 surrounding the hot plate 34 can be raised and lowered by the raising / lowering mechanism 33, and the chamber 32 can be cooled by approaching or contacting the cooling body 70.
  • the chamber 32 is cooled by a simple configuration by providing the configuration for moving the chamber 32 (elevating mechanism 33) and the configuration for cooling the chamber 32 by simply approaching or contacting (cooling body 70). It becomes possible.
  • the temperature lowering time of the chamber 32 can be shortened with a simple configuration.
  • the temperature lowering time of the chamber 32 can be shortened, and the time required for maintenance can be shortened.
  • the cooling body 70 is provided above the chamber 32, and approaches or comes into contact with the upper surface of the chamber 32 moved upward by the elevating mechanism 33. Thereby, the chamber 32 can be appropriately cooled by the cooling body 70 when the chamber 32 is opened (moved upward) after the heat treatment.
  • the heat treatment unit U2 described above is provided on the lower surface of the cooling body 70, and is disposed between the chamber 32 and the cooling body 70 while contacting both the chamber 32 and the cooling body 70 when the chamber 32 and the cooling body 70 are close to each other.
  • the elastic body 72 is further provided. By providing such an elastic body 72, when the chamber 32 is close to the cooling body 70, the elastic body 72 is interposed between the chamber 32 and the cooling body 70, and the chamber 32 is separated from the cooling body 70. It becomes easy to make them approach in parallel. Thereby, the whole chamber 32 can be cooled uniformly.
  • the heat treatment unit U2 described above determines whether or not the heat treatment temperature of the wafer W is higher than the heat treatment temperature of the processing lot to be processed next time. Or a controller 100 configured to perform control of the elevating mechanism 33 so as to come into contact. Thereby, when it is necessary to lower the set temperature of the hot plate 34 and it is desired to cool the chamber 32 accordingly, the chamber 32 can be appropriately cooled by the cooling body 70.
  • the controller 100 moves the chamber 32 to a cooling position different from the normal ascending position when raising the chamber 32 at the end of the heat treatment by the hot plate 34.
  • the elevating mechanism 33 is controlled so that Thus, by setting a cooling position different from the normal open position (ascending position) after the heat treatment, it is possible to switch between normal open and movement during cooling by simple control.
  • a temperature sensor 80 for measuring the temperature of the chamber 32 is further provided, and the controller 100 determines whether or not the cooling of the chamber 32 by the cooling body 70 is finished based on the temperature of the chamber 32 measured by the temperature sensor 80. And controlling the elevating mechanism 33 so that the chamber 32 is separated from the cooling body 70 when it is determined to end. By controlling in this way, the chamber 32 can surely reach the cooling target temperature, and the cooling process can be finished immediately after the cooling is completed.
  • a plurality of heat treatment modules 300 are arranged in multiple stages in the vertical direction.
  • the heat treatment module 300 is configured to include at least the heating mechanism 30 including the above-described hot plate 34, chamber 32, and elevating mechanism 33, and a bottom wall portion 270 that acts as a cooling body.
  • the bottom wall portion 270 is a portion on which the support base 31 (see FIG. 4) that supports the hot plate 34 is placed, and is disposed at the lowermost end in the heat treatment module 300.
  • the bottom wall portion 270 is used as a cooling body (specifically, a cooling body in the lower heat treatment module).
  • the bottom wall portion 270 may be any as long as it can always maintain a temperature lower than the temperature assumed as the set temperature of the heat plate 34. Since the bottom wall portion 270 is located below the hot plate 34 and is separated from the hot plate 34, it is easy to maintain a low temperature.
  • the bottom wall part 270 may have a cooling flow path for circulating the cooling medium, like the cooling body of the first embodiment.
  • the cooling body in the lower heat treatment module 300b is the same as that in the upper heat treatment module 300a.
  • the bottom wall 270 is included. Even in such a configuration, as in the first embodiment, the controller 100 controls the lifting mechanism 33 so that the chamber 32 moves upward, so that the chamber 32 of the lower heat treatment module 300b is moved to the upper stage.
  • the bottom wall portion 270 of the heat treatment module 300a (a cooling body for the lower heat treatment module 300b) can be brought close to or in contact with.
  • the bottom wall portion 270 of the upper heat treatment module 300a functions as a cooling body for the lower heat treatment module 300b, so that the heat treatment modules are conventionally provided in a multi-stage arrangement.
  • the chamber 32 can be cooled using the bottom wall portion 270, and the cooling of the chamber 32 can be realized with a simpler configuration because there is no need to provide a separate cooling body.
  • the uppermost heat treatment module (for example, the heat treatment module 300a) has no upper heat treatment module and there is no bottom wall portion 270 to be used as a cooling body.
  • a cooling body 170 may be provided above.
  • a temperature adjustment plate 351 (cool plate) that delivers the wafer W between the hot plate 34 and the external transfer arm A3 (see FIG. 3) and adjusts the temperature of the wafer W to a predetermined temperature. ) Also functions as a cooling body for cooling the chamber 32.
  • the temperature adjustment plate 351 cools the chamber 32 by approaching or coming into contact with the lower end of the foot 32b of the chamber 32 (see FIG. 10).
  • the temperature adjustment plate 351 is formed with a cooling flow path 352 for circulating the cooling medium.
  • the temperature adjustment plate 351 stands by at a position away from the hot plate 34 as shown in FIG.
  • the chamber 32 is opened as shown in FIG. 10B, and the temperature adjustment plate 351 is disposed on the hot plate 34 to transport the wafer W.
  • the temperature adjustment plate 351 normally only delivers the wafer W, but in this embodiment, as shown in FIG. 10C, the foot 32b of the chamber 32 is placed on the upper surface of the temperature adjustment plate 351. The lower ends of the chambers 32 are brought close to or in contact with each other, and the chamber 32 is cooled.
  • the elastic body 400 may be provided on the upper surface of the temperature adjustment plate 351.
  • the elastic body 400 is a spring-like member disposed between the chamber 32 and the temperature adjustment plate 351 while being in contact with both the chamber 32 and the temperature adjustment plate 351 when the chamber 32 and the temperature adjustment plate 351 are close to each other.
  • the chamber 32 is cooled by using the temperature adjustment plate 351 that has been conventionally provided in order to transport the wafer W and to cool the chamber W, thereby realizing the cooling of the chamber 32 with a simpler configuration. Can do.
  • this indication is not limited to the above-mentioned embodiment.
  • a cooling body elevating unit configured to be able to raise and lower the cooling body 70 may be further provided. Thereby, the cooling body 70 can be moved, and the cooling of the chamber 32 can be realized more easily.
  • the elastic body 72 provided in the cooling body 70 was demonstrated as one aspect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2019/018443 2018-05-21 2019-05-08 基板処理装置 WO2019225319A1 (ja)

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Citations (5)

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JP2004079677A (ja) * 2002-08-13 2004-03-11 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2008034739A (ja) * 2006-07-31 2008-02-14 Dainippon Screen Mfg Co Ltd ロードロック装置、それを備えた基板処理装置および基板処理システム
JP2008244224A (ja) * 2007-03-28 2008-10-09 Sumitomo Precision Prod Co Ltd プラズマ処理装置
JP2009176862A (ja) * 2008-01-23 2009-08-06 Sokudo Co Ltd 基板処理装置
JP2011044663A (ja) * 2009-08-24 2011-03-03 Tokyo Electron Ltd 加熱処理装置

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JP2002164333A (ja) * 2000-11-27 2002-06-07 Tokyo Electron Ltd 熱処理装置
JP3898895B2 (ja) 2001-01-26 2007-03-28 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
JP2010182906A (ja) * 2009-02-06 2010-08-19 Tokyo Electron Ltd 基板処理装置
JP5322847B2 (ja) * 2009-08-20 2013-10-23 東京エレクトロン株式会社 加熱処理装置及び熱処理装置
JP5501193B2 (ja) * 2010-10-26 2014-05-21 東京エレクトロン株式会社 基板処理装置
JP3180048U (ja) * 2012-09-20 2012-11-29 東京エレクトロン株式会社 熱処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079677A (ja) * 2002-08-13 2004-03-11 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2008034739A (ja) * 2006-07-31 2008-02-14 Dainippon Screen Mfg Co Ltd ロードロック装置、それを備えた基板処理装置および基板処理システム
JP2008244224A (ja) * 2007-03-28 2008-10-09 Sumitomo Precision Prod Co Ltd プラズマ処理装置
JP2009176862A (ja) * 2008-01-23 2009-08-06 Sokudo Co Ltd 基板処理装置
JP2011044663A (ja) * 2009-08-24 2011-03-03 Tokyo Electron Ltd 加熱処理装置

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JP6937906B2 (ja) 2021-09-22
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JPWO2019225319A1 (ja) 2021-05-27
KR20210011395A (ko) 2021-02-01

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