WO2016042667A1 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- WO2016042667A1 WO2016042667A1 PCT/JP2014/074881 JP2014074881W WO2016042667A1 WO 2016042667 A1 WO2016042667 A1 WO 2016042667A1 JP 2014074881 W JP2014074881 W JP 2014074881W WO 2016042667 A1 WO2016042667 A1 WO 2016042667A1
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- etching
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- titanium
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 79
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000010936 titanium Substances 0.000 claims abstract description 39
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 59
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 42
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 31
- 229910021529 ammonia Inorganic materials 0.000 description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000000354 decomposition reaction Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007790 scraping Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010280 TiOH Inorganic materials 0.000 description 1
- 229910010275 TiOOH Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Definitions
- the present invention relates to a method for manufacturing a semiconductor device.
- Patent Documents 1 and 2 Conventionally, as shown in Patent Documents 1 and 2 below, various techniques for suppressing a change in etching rate are known for wet etching of a metal film.
- wet etching of titanium film is carried out using ammonia perwater solution. Further, there is a technique for achieving a uniform concentration or a constant temperature by circulating an etching solution.
- the ammonia perwater solution is circulated, the decomposition of hydrogen peroxide is promoted, so that the concentration of hydrogen peroxide decreases with time.
- the etching rate strongly affects the concentration of hydrogen peroxide. For this reason, if the elapsed time after the preparation of the ammonia-hydrogen peroxide solution increases, the etching rate decreases, and there is a problem that the etching rate cannot be kept uniform.
- the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device capable of maintaining a uniform etching rate over a long period of time.
- the method for manufacturing a semiconductor device includes a preparation step of preparing a liquid in which titanium is preliminarily dissolved in an ammonia perwater solution before use as an etching solution, and the etching in a treatment tank after the preparation step.
- a preparation step of preparing a liquid in which titanium is preliminarily dissolved in an ammonia perwater solution before use as an etching solution and the etching in a treatment tank after the preparation step.
- the flow step of flowing the etching solution, and after starting the flow step by placing a semiconductor wafer provided with a resist film and a metal film in the processing tank, And a processing step of etching the metal film with an etching solution.
- the etching rate can be kept uniform over a long period of time by suppressing the decomposition of hydrogen peroxide in the ammonia-aqueous solution.
- FIG. 3 is a flowchart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. It is a figure which shows the etching apparatus concerning embodiment of this invention. It is a figure which shows the etching apparatus concerning embodiment of this invention. It is a figure which shows the preparation process of the etching liquid concerning embodiment of this invention. It is a figure which shows the preparation process of the etching liquid concerning embodiment of this invention. It is a figure which shows the etching process concerning embodiment of this invention. It is a figure which shows the experimental result concerning the comparative example with respect to embodiment. It is a figure which shows the experimental result concerning embodiment of this invention. It is a figure which shows the experimental result concerning embodiment of this invention.
- FIG. 1 is a flowchart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- 2 and 3 are views showing a wet etching apparatus 50 according to the embodiment of the present invention.
- the etching process shown in the flowchart in FIG. 1 is performed using the wet etching apparatus 50, and the titanium film 14 on the silicon carbide (SiC) wafer 10 shown in FIG. 6 is etched.
- the wet etching apparatus 50 includes a processing tank 20, a first pipe 30, a circulation pump 32, a temperature controller 34, a second pipe 36, and a densitometer 38. .
- An etching solution 29 is stored in the processing tank 20.
- the first pipe 30 has one end and the other end connected to the processing tank 20, and is used for circulating the etching solution 29 therein.
- the circulation pump 32 and the temperature controller 34 are provided in the middle of the first pipe 30.
- the etchant 29 can be circulated through the first pipe 30 by driving the circulation pump 32.
- the temperature controller 34 is provided in the middle of the first pipe 30. By flowing the etching solution 29 via the temperature controller 34, the temperature of the etching solution 29 can be adjusted.
- One end of the second pipe 36 is connected to the outlet of the circulation pump 32, and the other end of the second pipe 36 is located above the processing tank 20.
- the etchant 29 can be supplied as droplets 39 from the other end of the second pipe 36.
- a densitometer 38 is provided in the middle of the second pipe 36.
- the concentration of the circulating etching solution 29 can be known from the measured value of the densitometer 38.
- the flow rate of the first pipe 30 may be several liters / minute
- the flow rate of the second pipe 36 may be several cm 3 / minute.
- FIG. 3 shows a cross section of the processing tank 20.
- the processing tank 20 includes an inner tank 201 into which the SiC wafer 10 is to be placed, and an outer tank 202 provided so as to surround the inner tank 201.
- the etching solution 29 overflowing from the inner tank 201 flows into the outer tank 202.
- the circulation pump 32 sucks out the etching solution 29 in the outer tank 202 from one end of the first pipe 30 connected to the bottom surface of the outer tank 202.
- the circulation pump 32 feeds the etching solution 29 into the inner tank 201 via the other end of the first pipe 30 connected to the bottom surface of the inner tank 201.
- the etching solution 29 circulates in the treatment tank 20.
- this invention is not restricted to the processing tank 20 of the 2 tank structure of FIG. 3, A 1 tank structure may be sufficient.
- the etching solution 29 in the processing tank may be stirred using a known means for stirring the liquid.
- an etching solution 29 is prepared in steps S100 and S102. Specifically, titanium is dissolved in advance in an ammonia perwater solution 22 before use for etching to prepare an etching solution 29.
- step S100 the ammonia perwater solution 22 is prepared.
- FIG. 4 is a diagram showing a preparation process of the etching solution 29 according to the embodiment of the present invention.
- An ammonia aqueous solution 22 is produced by sequentially introducing the ammonia water 24, the hydrogen peroxide solution 26, and the pure water 28 in which titanium is not dissolved into the treatment tank 20. Since the concentration changes if prepared in advance, it is preferably added at the time of liquid preparation. Since the ammonia perwater solution 22 is used before etching, that is, unused, it does not contain a metal such as titanium.
- FIG. 5 is a diagram showing a preparation process of the etching solution 29 according to the embodiment of the present invention.
- a semiconductor wafer 44 in which a titanium film 42 is formed on a semiconductor substrate 40 such as silicon (Si) is introduced into the treatment tank 20, thereby dissolving the titanium film 42 in the ammonia overwater solution 22.
- the semiconductor wafer 44 is for dissolving titanium in advance in the ammonia perwater solution 22. Therefore, unlike the wafer to be etched, the semiconductor wafer 44 is not provided with a resist for patterning the titanium film 42.
- the present invention is not limited to the embodiment using the semiconductor wafer 44, and for example, titanium fine particles or the like may be introduced into the processing tank 20.
- Etching solution 29 is completed by step S102.
- step S104 the etching liquid 29 is circulated by driving the circulation pump 32 in the apparatus configuration shown in FIG.
- the etching solution 29 in the processing bath 20 is circulated using the circulation pump 32 in order to make the concentration and temperature of the etching solution 29 in the processing bath 20 constant.
- the etching uniformity is improved by circulating the etching solution 29. That is, by circulating the etching solution 29 in the processing bath 20 with the circulation pump 32, the concentration of the etching solution 29 in the processing bath 20 can be kept uniform.
- the temperature controller 34 is attached to the processing tank 20 and the etching solution 29 is circulated so that the temperature of the etching solution 29 becomes constant, changes in the etching rate due to temperature changes can be suppressed.
- the circulation of the hydrogen peroxide solution 22 facilitates the decomposition of hydrogen peroxide.
- the first reason is that when a two-tank processing tank 20 is used as shown in FIG. 3, the ammonia superwater solution 22 overflows from the inner tank 201 to the outer tank 202 when the ammonia superwater solution 22 is circulated. As a result, the contact area between the ammonia overwater liquid 22 and the atmosphere increases.
- the second reason is that oxygen dissolved in the ammonia superwater solution 22 escapes due to a cavitation effect caused by pressure fluctuation in the circulation pump 32.
- the inventor of the present application has conducted intensive research and found that the decomposition of hydrogen peroxide in the ammonia-hydrogen peroxide solution can be suppressed by dissolving titanium in advance. This makes it possible to keep the etching rate constant over a long period of time.
- the reason why the decomposition of hydrogen peroxide is suppressed when titanium is dissolved immediately after the preparation of the ammonia perwater solution is shown below.
- hydrogen peroxide undergoes a reaction of the following formula 1 to generate hydroperoxyl radicals, that is, OOH. H 2 O 2 + OH ⁇ H 2 O + OOH (Formula 1)
- the hydroperoxyl radical is considered to function to react with hydrogen peroxide and accelerate decomposition in an alkaline solution. It is considered that the reaction of the following formula 2 occurs and the decomposition of H 2 O 2 proceeds at an accelerated rate.
- H 2 O 2 + OOH ⁇ O 2 + H 2 O + OH (Formula 2)
- FIG. 6 is a diagram showing an etching process according to the embodiment of the present invention.
- the SiC wafer 10 to be etched is obtained by laminating a titanium film 14 on a SiC substrate 12, laminating a resist film 16 on the titanium film 14, and patterning the resist film 16 into a desired shape.
- FIG. 6 shows a state where the etching groove 15 is formed in the titanium film 14.
- the titanium film 14 on the SiC wafer 10 is etched in step S106.
- a metal film other than titanium may be etched using the etching solution 29.
- a nickel film may be laminated on the SiC wafer 10 instead of the titanium film 14, and this nickel film may be etched in step S106.
- the manufacturing method according to this embodiment is suitable for etching the titanium film 14. Since titanium and nickel are Schottky bonded to silicon carbide, the etching method according to this embodiment is preferably applied to form a Schottky barrier electrode layer on the SiC substrate 12.
- FIG. 7 is a diagram illustrating an experimental result according to a comparative example with respect to the embodiment.
- 8 and 9 are diagrams showing experimental results according to the embodiment of the present invention.
- the NH 3 concentration is plotted with diamonds
- the H 2 O 2 concentration is plotted with squares
- the amount of titanium scraping when the SiC wafer 10 is immersed in the etching solution 29 for 4 minutes is plotted with triangles.
- the scale on the left indicates the concentration [%]
- the scale on the right indicates the amount of shaving [nm] of the titanium film.
- FIG. 7 is a result of an experiment using an ammonia perwater solution that does not dissolve titanium as a comparative example, and is a diagram showing a change in concentration and a titanium scraping amount according to elapsed time.
- Elapsed time is the elapsed time from the preparation of the ammonia overwater solution. In the region where the elapsed time is about 0 to 10 hours immediately after the start of the experiment, the H 2 O 2 concentration rapidly decreases to 10% or less. When the elapsed time is around 100 hours, the H 2 O 2 concentration decreases to around 1% to 0%. When the amount of titanium scraping was measured at an elapsed time of 100 hours, it was substantially zero nm.
- FIG. 8 shows the relationship between the H 2 O 2 concentration and the etching rate of titanium. For each H 2 O 2 concentration, the amount of titanium scraping when the SiC wafer 10 is immersed in the etching solution 29 for 4 minutes is plotted. As shown in FIG. 8, the lower the H 2 O 2 concentration, the lower the titanium etching rate.
- FIG. 9 shows the experimental results using the etching solution 29 of the present embodiment.
- the etching rate can be kept uniform over a long period of time by suppressing the decomposition of hydrogen peroxide in the ammonia overwater solution.
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Abstract
Description
まず、ステップS100において、アンモニア過水液22を調合する。図4は、本発明の実施の形態にかかるエッチング液29の準備工程を示す図である。チタンが溶かされていないアンモニア水24、過酸化水素水26、および純水28を、順番に処理槽20に投入することで、アンモニア過水液22を作製する。事前に調合しておくと濃度が変化するため、液作製時にそれぞれ投入することが好ましい。アンモニア過水液22はエッチング使用前すなわち未使用のものなので、チタンなどの金属が含まれていない。
次に、ステップS102に進み、アンモニア過水液22にチタンと溶かす。図5は、本発明の実施の形態にかかるエッチング液29の準備工程を示す図である。図5では、一例として、シリコン(Si)などの半導体基板40上にチタン膜42を成膜した半導体ウェハ44を処理槽20内に投入することにより、アンモニア過水液22にチタン膜42を溶かす。半導体ウェハ44は、アンモニア過水液22に事前にチタンを溶かすためのものである。従って半導体ウェハ44には、エッチング処理対象のウェハとは異なりチタン膜42をパターニングするためのレジストが設けられていない。なお本発明は半導体ウェハ44を用いる実施形態に限られるものではなく、例えばチタン微粒子などを処理槽20に投入してもよい。ステップS102によりエッチング液29が完成する。
次に、ステップS104において、図2に示す装置構成において循環ポンプ32を駆動させてエッチング液29を循環する。本実施形態では、好ましい形態として、処理槽20のエッチング液29の濃度および温度を一定にするために、循環ポンプ32を用いて処理槽20内のエッチング液29を循環させるものとする。エッチング液29を循環させることで、エッチング均一性を向上させる。すなわち、処理槽20内のエッチング液29を循環ポンプ32で循環させることにより、処理槽20内のエッチング液29の濃度を均一に保つことができる。また、処理槽20に温度調節器34を取り付けてエッチング液29の温度が一定になるようにエッチング液29の循環を行っているので、温度変化によるエッチング速度の変化を抑制することもできる。
H2O2+OH ⇔ H2O+OOH ・・・(式1)
H2O2+OOH→O2+H2O+OH ・・・(式2)
TiOOH+NH3=NH2OH/TiOH ・・・(式3)
ヒドロペルオキシルラジカルは、ヒドロキシルアミンを生成するのに優先的に消費される。ヒドロキシルアミンすなわちNH2OHは、チタンの塩である。式3の反応があるため、式2に示すヒドロペルオキシルラジカルによる過酸化水素の分解反応を抑制することができる。アンモニア過水液22にチタンを溶かす量は、上記式2の反応を十分に抑制できるように実験的に定めればよい。
次に、ステップS106において、SiCウェハ10を処理槽20に入れてエッチング液29に浸す。図6は、本発明の実施の形態にかかるエッチング工程を示す図である。エッチングを行うSiCウェハ10は、SiC基板12にチタン膜14を積層し、チタン膜14上にレジスト膜16を積層し、レジスト膜16を所望の形状にパターニングしたものである。図6では、チタン膜14にエッチング溝15が形成されている様子を示している。
Claims (5)
- エッチング使用前のアンモニア過水液に予めチタンを溶かした液体をエッチング液として準備する準備工程と、
前記準備工程の後に、処理槽の中での前記エッチング液の濃度を均一にするように、前記エッチング液の流動を行う流動工程と、
前記流動工程を開始した後に、レジスト膜および金属膜を備えた半導体ウェハを前記処理槽内に入れることで、前記エッチング液で前記金属膜をエッチングする処理工程と、
を備える半導体装置の製造方法。 - 前記金属膜がチタンで形成された請求項1に記載の半導体装置の製造方法。
- 温度調節器を経由して流れるように前記エッチング液を流動させることで前記エッチング液の温度を調節する請求項1に記載の半導体装置の製造方法。
- 前記処理槽が、前記エッチング液が貯留される第1槽と、前記第1槽から溢れた前記エッチング液が流入する第2槽と、前記第1槽と前記第2槽とを接続する流路と、を備え、
前記流動工程は、前記流路を介して前記第2槽から前記第1槽へと前記エッチング液を循環させる請求項1に記載の半導体装置の製造方法。 - 前記半導体ウェハがSiCウェハであり、前記金属膜は前記SiCウェハにショットキー接合した請求項1に記載の半導体装置の製造方法。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07166373A (ja) * | 1993-12-15 | 1995-06-27 | Tanaka Kikinzoku Kogyo Kk | はんだバンプのバリヤメタル用エッチング液 |
JPH0942600A (ja) * | 1995-08-02 | 1997-02-14 | Hitachi Ltd | 薬液供給装置 |
JPH09275098A (ja) * | 1996-04-03 | 1997-10-21 | Casio Comput Co Ltd | エッチング方法 |
JP2004266207A (ja) * | 2003-03-04 | 2004-09-24 | Denso Corp | 抵抗体を備えた半導体装置の製造方法 |
JP2006210778A (ja) * | 2005-01-31 | 2006-08-10 | Nec Electronics Corp | 半導体装置の製造方法およびエッチング液 |
JP2014011342A (ja) * | 2012-06-29 | 2014-01-20 | Denso Corp | 炭化珪素半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10223595A (ja) * | 1997-02-03 | 1998-08-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6399517B2 (en) * | 1999-03-30 | 2002-06-04 | Tokyo Electron Limited | Etching method and etching apparatus |
KR100396695B1 (ko) | 2000-11-01 | 2003-09-02 | 엘지.필립스 엘시디 주식회사 | 에천트 및 이를 이용한 전자기기용 기판의 제조방법 |
JP3939630B2 (ja) * | 2002-10-31 | 2007-07-04 | エム・エフエスアイ株式会社 | 沸騰薬液の管理方法 |
JP2004214243A (ja) * | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体ウェーハのエッチング方法及びエッチング装置 |
JP4471094B2 (ja) * | 2004-05-11 | 2010-06-02 | 三菱瓦斯化学株式会社 | チタンまたはチタン合金のエッチング液 |
US20060247803A1 (en) * | 2005-03-29 | 2006-11-02 | Kazushi Mori | Control system, control method, process system, and computer readable storage medium and computer program |
JP4978548B2 (ja) | 2008-04-25 | 2012-07-18 | 三菱化学株式会社 | エッチング方法及び半導体デバイス用基板の製造方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07166373A (ja) * | 1993-12-15 | 1995-06-27 | Tanaka Kikinzoku Kogyo Kk | はんだバンプのバリヤメタル用エッチング液 |
JPH0942600A (ja) * | 1995-08-02 | 1997-02-14 | Hitachi Ltd | 薬液供給装置 |
JPH09275098A (ja) * | 1996-04-03 | 1997-10-21 | Casio Comput Co Ltd | エッチング方法 |
JP2004266207A (ja) * | 2003-03-04 | 2004-09-24 | Denso Corp | 抵抗体を備えた半導体装置の製造方法 |
JP2006210778A (ja) * | 2005-01-31 | 2006-08-10 | Nec Electronics Corp | 半導体装置の製造方法およびエッチング液 |
JP2014011342A (ja) * | 2012-06-29 | 2014-01-20 | Denso Corp | 炭化珪素半導体装置 |
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