WO2015151285A1 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
WO2015151285A1
WO2015151285A1 PCT/JP2014/060009 JP2014060009W WO2015151285A1 WO 2015151285 A1 WO2015151285 A1 WO 2015151285A1 JP 2014060009 W JP2014060009 W JP 2014060009W WO 2015151285 A1 WO2015151285 A1 WO 2015151285A1
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WIPO (PCT)
Prior art keywords
conductive member
semiconductor element
semiconductor module
semiconductor
bonding
Prior art date
Application number
PCT/JP2014/060009
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English (en)
French (fr)
Inventor
昌和 谷
善行 出口
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2016511296A priority Critical patent/JP6272459B2/ja
Priority to PCT/JP2014/060009 priority patent/WO2015151285A1/ja
Priority to US15/126,609 priority patent/US9853009B2/en
Priority to CN201480077596.3A priority patent/CN106133896B/zh
Priority to EP18208036.6A priority patent/EP3477690B1/en
Priority to EP14888393.7A priority patent/EP3128541A4/en
Publication of WO2015151285A1 publication Critical patent/WO2015151285A1/ja

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Definitions

  • the present invention relates to a semiconductor module using a conductive member which is an electric wiring part, and more particularly to a semiconductor module for realizing both increase in current capacity and improvement in reliability.
  • the semiconductor module composed of IGBT or MOS-FET that controls the switching of current is the main component of power conversion devices such as inverters and chargers. With the progress of electrification of vehicles, there is a demand for higher output of the power converter, and the current capacity of the semiconductor module tends to increase.
  • an electrode of a semiconductor element and a bus bar constituting a main terminal are directly joined (for example, see Patent Document 1).
  • the conventional bus bar disclosed in Patent Document 1 uses a metal plate (for example, a copper plate) having high conductivity.
  • a metal plate for example, a copper plate
  • a copper material corresponding to the current capacity is used for the bus bar.
  • the cross-sectional area increases and the rigidity is often increased.
  • the dimensional tolerances of the components in the semiconductor module cannot be absorbed, and residual stress is generated on the joint surface between the semiconductor element and the bus bar. This residual stress also causes problems such as peeling and chip cracks as described above, resulting in problems related to reliability.
  • the bus bar has a high electric resistance value of high frequency components, and there is a limit to increasing the current capacity.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor module capable of achieving both an increase in current capacity of a semiconductor device and an improvement in reliability of the semiconductor module. To do.
  • a conductive member used for electrically connecting a semiconductor element disposed on a substrate or a bus bar to another electronic component is formed of a conductive member and a semiconductor element at a junction with the semiconductor element.
  • the thermal stress due to the difference in linear expansion coefficient is reduced, and a structure having flexibility that can absorb the dimensional tolerance of the connection target is provided.
  • a conductive member made of a fine metal wire, a conductive member made of a braided wire, or a conductive member laminated with sheet metal is used for the wiring of the semiconductor element.
  • the resistance value of the high-frequency component is reduced to increase the current capacity of the electrical wiring, while preventing problems caused by thermal stress due to the difference in linear expansion coefficient between the conductive member and the semiconductor element. Residual stresses caused by dimensional tolerances can be reduced. As a result, it is possible to obtain a semiconductor module capable of achieving both an increase in the current capacity of the semiconductor device and an improvement in the reliability of the semiconductor module.
  • FIG. 1 is a cross-sectional view of a semiconductor module according to Embodiment 1 of the present invention.
  • the semiconductor module 9 according to the first embodiment includes a semiconductor element 3 disposed on a substrate 1 (or a bus bar), a conductive member 2 constituting a main terminal, and a heat sink 7.
  • the conductive member 2 is bonded to the upper electrode 5-1 of the semiconductor element 3 and the terminal 8 of the electronic component that constitutes the switching circuit.
  • the conductive member 2 has a structure in which fine metal wires such as copper and aluminum having high conductivity are stranded. By adjusting the diameter and number of the stranded wires, it is possible to increase the current capacity of the electric wiring portion.
  • a joining method ultrasonic joining, solder joining, Ag sintering joining, joining with a conductive adhesive, diffusion joining, brazing, and other joining methods can be used.
  • the conductive member 2 having a stranded metal wire has flexibility, the conductive member 2 deforms following the thermal expansion of the semiconductor element 3. For this reason, no distortion occurs at the joint surface 4 between the conductive member 2 and the semiconductor element 3, and no thermal stress due to a difference in linear expansion coefficient between the conductive member 2 and the semiconductor element 3 occurs.
  • the conductive member 2 has flexibility. It is possible to absorb the dimensional tolerances. As a result, the residual stress in the joint surface 4 and the joint surface 10 can be eliminated.
  • the high frequency current flows near the surface of the conductive member 2 due to the skin effect. For this reason, the electrical resistance of the high frequency component tends to increase.
  • the electrically-conductive member 2 is comprised with the aggregate
  • a conductive member having a structure in which a thin metal wire having high conductivity is used is adopted.
  • a conductive member having flexibility and an increased surface area it is possible to apply a conductive member having flexibility and an increased surface area, to increase the current capacity in the electrical wiring portion, and to prevent separation of the joint portion due to thermal stress. Reliability can be improved.
  • Embodiment 2 FIG. In the first embodiment, the case where a structure in which a thin metal wire having high conductivity is used as the conductive member 2 for achieving the purpose of having flexibility and increasing the surface area has been described. On the other hand, in this Embodiment 2, the case where the electroconductive member of a structure different from Embodiment 1 is employ
  • the conductive member 2 according to the second embodiment employs a structure in which fine metal wires are knitted in a mesh shape (hereinafter, braided wire).
  • the cross-sectional shape of the conductive member 2 having such a structure is a plate shape, an elliptical shape, or a circular shape.
  • a conductive member having a structure in which fine metal wires are knitted in a mesh shape is employed.
  • a conductive member having flexibility and an increased surface area it is possible to apply a conductive member having flexibility and an increased surface area, to increase the current capacity in the electrical wiring portion, and to prevent separation of the joint portion due to thermal stress. Reliability can be improved.
  • Embodiment 3 In the first embodiment, the case where a structure in which a thin metal wire having high conductivity is used as the conductive member 2 for achieving the purpose of having flexibility and increasing the surface area has been described. Moreover, in previous Embodiment 2, the case where a braided wire was employ
  • the conductive member 2 according to the third embodiment is configured by laminating sheet metal, and employs a structure in which the conductive member 2 is bonded to the semiconductor element 3 together with the sheet metal layer.
  • the interlayer of the sheet metal is not fixed except for the joint surfaces 4 and 10. And the current capacity in electrical wiring can be increased by increasing the number of laminated sheet metals.
  • the sheet metal constituting the conductive member 2 has flexibility and can be deformed following the thermal expansion of the electrode 5-1 of the semiconductor element 3. For this reason, there is no distortion in the joint surface 4 and no thermal stress is generated. Therefore, even with such a structure, as in the first and second embodiments, it is possible to achieve both a large current capacity in the electrical wiring portion and prevention of peeling due to thermal stress.
  • a conductive member having a structure in which sheet metal is laminated is employed.
  • a conductive member having flexibility and an increased surface area it is possible to apply a conductive member having flexibility and an increased surface area, to increase the current capacity in the electrical wiring portion, and to prevent separation of the joint portion due to thermal stress. Reliability can be improved.
  • FIG. 2 is a cross-sectional view of the semiconductor module according to Embodiment 4 of the present invention.
  • the configuration of FIG. 2 is different in that it includes a cooling surface 6 (corresponding to a cooling surface structure). Therefore, this different configuration will be mainly described below.
  • the conductive member 2 in the fourth embodiment is connected to the upper electrode 5-1 of the semiconductor element 3, the cooling surface 6 of the conductive member 2, and the terminal 8 of the electronic component.
  • a conductive member in which the fine metal wire described in the first embodiment is a stranded wire
  • a conductive member in which the fine metal wire described in the second embodiment is knitted in a mesh shape
  • Any of the conductive members in which the described sheet metals are laminated can be applied.
  • the cooling surface 6 newly added in the fourth embodiment is insulated from the upper electrode 5-1 of the semiconductor element, and is joined to the substrate 1 or the heat sink 7 that is actively cooled. Yes.
  • the conductive member 2 can absorb the dimensional tolerance in the height direction of the semiconductor element 3 and the cooling surface 6. For this reason, no residual stress is generated during bonding.
  • the semiconductor element 3 can be cooled via the conductive member 2. Therefore, the heat dissipation area is increased, and the heat dissipation can be improved while suppressing the peeling of the conductive member 2 due to the residual stress.
  • the same effects as those of the first to third embodiments can be obtained. Furthermore, by adopting a configuration including a cooling surface, it is possible to realize a semiconductor module that can suppress the occurrence of residual stress and improve heat dissipation.
  • FIG. 3 is a cross-sectional view of the semiconductor module according to Embodiment 5 of the present invention.
  • the configuration of FIG. 3 includes two semiconductor elements 3 mounted on the substrate 1, and these two semiconductor elements 3 are each composed of one conductive member 2. Are different in that they are connected in common. Therefore, this different configuration will be mainly described below.
  • two or more semiconductor elements 3 are arranged on the substrate 1 (however, in FIG. 3, the case where there are two semiconductor elements 3 is illustrated), and the same conductive member 2 is used. Are used to electrically connect two or more semiconductor elements 3.
  • the bonding surface 4 between the conductive member 2 and the upper electrode 5-1 of each semiconductor element 3 is ultrasonically bonded.
  • the ultrasonic bonding apparatus generates frictional heat on the bonding surface by applying ultrasonic vibration to the conductive member 2 to bond the conductive member 2 and each semiconductor element 3.
  • the conductive member 2 includes a conductive member in which the fine metal wires described in the first embodiment are stranded, a conductive member in which the fine metal wires described in the second embodiment are knitted in a mesh shape, and the sheet metal described in the third embodiment. Any of the conductive members laminated can be applied. Further, although not shown in FIG. 3, the heat radiation property of the semiconductor element 3 is improved by providing the cooling surface 6 as described in FIG. Is also possible.
  • the same effects as in the first to fourth embodiments can be obtained by connecting a plurality of semiconductor elements using the conductive member of the present invention. .
  • the merit of the conductive member 2 according to the present invention in the case where ultrasonic bonding is employed for bonding the conductive member 2 and the bonding surface 4 (11) will be described based on comparison with the prior art.
  • a bus bar which is a metal plate is ultrasonically bonded to the electrode 5-1 of the semiconductor element 3
  • ultrasonic vibration in the in-plane direction of the bus bar is caused when the other semiconductor element is bonded. 3 is propagated to the bonding surface 11 between the electrode 5-3 and the bus bar, and peeling at the bonding surface 11 is a problem.
  • the conductive member 2 that swings the flexibility is used instead of the bus bar. Therefore, when the conductive member 2 is ultrasonically bonded to the electrode 5-1 of the semiconductor element 3, the ultrasonic vibration can be absorbed by the flexible conductive member 2. For this reason, peeling at the joint surface 11 between the electrode 5-3 of the semiconductor element 3 and the conductive member 2 can be prevented.

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Abstract

　本発明に係る半導体モジュールは、基板もしくはバスバに配置された半導体素子を他の電子部品と電気的に接続させるために用いられる導電部材が、半導体素子との接合部における、導電部材と半導体素子との線膨張係数差による冷熱ストレスを低減し、接続対象の寸法公差を吸収できる柔軟性を有する構造を備えており、この結果、半導体装置の電流容量の増大と、半導体モジュールの信頼性向上の両立を図ることを実現している。

Description

半導体モジュール
　本発明は、電気配線部である導電部材を用いた半導体モジュールに関し、特に、電流容量の増大と信頼性向上の両立を実現するための半導体モジュールに関する。
　電流をスイッチング制御するＩＧＢＴあるいはＭＯＳ－ＦＥＴから構成される半導体モジュールは、インバータ、充電器などの電力変換装置の主要構成部品である。車両の電動化が進む中で、電力変換装置の高出力化が求められており、半導体モジュールの電流容量は、増大する傾向にある。
　さらに、ＳｉＣ等の半導体素子の進化に伴い、半導体素子は、２００℃付近の高温環境下でも動作可能になってきている。しかしながら、その一方で、冷熱サイクル等における構造信頼性については、従来と比べて非常に厳しくなっている。したがって、半導体モジュールは、高出力化による電流容量増大と、高温環境で長期間に渡り正常動作できる信頼性確保の両立が求められる。
　大電流容量化のためには、通電部材の電気抵抗値の低減が必須である。さらに、低温から高温の環境において信頼性を確保するためには、半導体モジュール内部の構成部材の接合部における冷熱ストレスの低減、およびこの接合部における残留応力の低減、が必要不可欠である。
　そして、従来の半導体モジュールでは、電流容量を増大させるために、半導体素子の電極と主端子を構成するバスバを、直接接合しているものがある（例えば、特許文献１参照）。
特開２００５－５５９３号公報
　しかしながら、従来技術には、以下のような課題がある。
　この特許文献１に開示された従来のバスバは、導電率が高い金属製のプレート（例えば、銅プレート）が使用されている。一般的に、バスバは、電流容量に応じた銅材を用いることになるが、大出力用となると、断面積が増大し、剛性となる場合が多い。
　しかしながら、この特許文献１における配線構造では、半導体素子とバスバとの熱膨張差が大きいため、それらの接合面において歪みが発生し、冷熱ストレスが発生する。その結果、半導体素子とバスバの接合面において、剥離やチップクラック等が発生するといった問題が生じる。
　また、半導体モジュールにおける構成部材の寸法公差を吸収できず、半導体素子とバスバの接合面に残留応力が発生する。この残留応力も、上述した剥離やチップクラック等の不具合の原因となり、信頼性に関する問題が生じる。また、バスバは、高周波成分の電気抵抗値が高く、大電流容量化には限界がある。
　本発明は、前記のような課題を解決するためになされたものであり、半導体装置の電流容量の増大と、半導体モジュールの信頼性向上の両立を図ることのできる半導体モジュールを得ることを目的とする。
　本発明に係る半導体モジュールは、基板もしくはバスバに配置された半導体素子を他の電子部品と電気的に接続させるために用いられる導電部材が、半導体素子との接合部における、導電部材と半導体素子との線膨張係数差による冷熱ストレスを低減し、接続対象の寸法公差を吸収できる柔軟性を有する構造を備えるものである。
　本発明によれば、半導体素子の配線に、金属細線をより線にした導電部材、編組線からなる導電部材、あるいは板金を積層した導電部材を使用している。この構成により、高周波成分の抵抗値を低減させて、電気配線の大電流容量化を図りつつ、導電部材と半導体素子との線膨張係数差による冷熱ストレスに起因した不具合を防止し、半導体モジュールの寸法公差が原因で発生する残留応力を低減することができる。この結果、半導体装置の電流容量の増大と、半導体モジュールの信頼性向上の両立を図ることのできる半導体モジュールを得ることができる。
本発明の実施の形態１における半導体モジュールの断面図である。 本発明の実施の形態４における半導体モジュールの断面図である。 本発明の実施の形態５における半導体モジュールの断面図である。
　以下、本発明の半導体モジュールの好適な実施の形態につき、図面を用いて説明する。なお、各図において同一または相当する部分に付いては、同一符号を付して説明する。
　実施の形態１．
　図１は、本発明の実施の形態１における半導体モジュールの断面図である。本実施の形態１における半導体モジュール９は、基板１（あるいはバスバ）に配置されている半導体素子３、主端子を構成する導電部材２、放熱板７から構成されている。導電部材２は、半導体素子３の上側電極５－１と、スイッチング回路を構成する電子部品の端子８とに接合されている。
　ここで、導電部材２は、導電率が高い銅、アルミニウム等の金属細線をより線にした構造となっている。そして、より線の直径、本数を調節することで、電気配線部の大電流容量化が可能となる。接合方法は、超音波接合、はんだ接合、Ａｇシンター接合、導電接着剤による接合、拡散接合、ろう付けはもちろんのこと、その他の接合方法でも問題ない。
　本実施の形態１では、金属細線をより線とした導電部材２が柔軟性を有しているため、半導体素子３の熱膨張に追従して導電部材２が変形する。このため、導電部材２と半導体素子３との接合面４で歪みが発生せず、導電部材２と半導体素子３との線膨張係数差による冷熱ストレスが発生しない。
　さらに、図１に例示しているように、半導体素子３の上側電極５－１と電子部品の端子８の高さ方向に段差がある場合にも、導電部材２が柔軟性を有するため、段差の寸法公差を吸収することが可能となる。この結果、接合面４および接合面１０における残留応力をなくすことができる。
　また、高周波電流は、表皮効果によって導電部材２の表面近くを流れる。このため、高周波成分の電気抵抗は、高くなる傾向にある。これに対して、本実施の形態１では、導電部材２が細線あるいは板金の集合体で構成されているため、従来のバスバと比べて表面積を増大させることが可能となる。この結果、高周波成分の電気抵抗を低減させることができ、大電流容量化が可能となる。
　以上のように、実施の形態１によれば、導電率が高い金属細線をより線にした構造の導電部材を採用している。この結果、柔軟性を有し、かつ表面積を増大させた導電部材を適用することができ、電気配線部における大電流容量化を図るとともに、冷熱ストレスによる接合部の剥離を防止し、半導体モジュールの信頼性向上を実現できる。
　実施の形態２．
　先の実施の形態１では、柔軟性を有し、かつ表面積を増大させる目的を達成するための導電部材２として、導電率が高い金属細線をより線にした構造を採用する場合について説明した。これに対して、本実施の形態２では、同様の目的を達成するために、実施の形態１とは異なる構造の導電性部材を採用する場合について説明する。
　本実施の形態２に係る導電部材２は、金属細線を網目状に編み込んだ構造（以下、編組線）を採用している。このような構造の導電部材２の断面形状は、板形状、楕円形状、円形状である。
　このような構造によっても、先の実施の形態１と同様に、柔軟性を有し、かつ表面積を増大させる目的を達成することができる。その結果、電気配線部における大電流容量化と、冷熱ストレスによる剥離の防止の両立を図ることが可能となる。
　以上のように、実施の形態２によれば、金属細線を網目状に編み込んだ構造の導電部材を採用している。この結果、柔軟性を有し、かつ表面積を増大させた導電部材を適用することができ、電気配線部における大電流容量化を図るとともに、冷熱ストレスによる接合部の剥離を防止し、半導体モジュールの信頼性向上を実現できる。
　実施の形態３．
　先の実施の形態１では、柔軟性を有し、かつ表面積を増大させる目的を達成するための導電部材２として、導電率が高い金属細線をより線にした構造を採用する場合について説明した。また、先の実施の形態２では、同様の目的を達成するための導電部材２として、編組線を採用する場合について説明した。これに対して、本実施の形態３では、同様の目的を達成するために、実施の形態１、２とは異なる構造の導電性部材を採用する場合について説明する。
　本実施の形態３に係る導電部材２は、板金を積層して構成されており、導電部材２が半導体素子３に対して板金の層間と併せて接合する構造を採用している。このような構造の導電部材２の板金同士は、接合面４、１０を除いて、板金の層間が固定されていない。そして、板金の積層数を増やすことで、電気配線における電流容量を増大することができる。
　このような構造によって、導電部材２を構成する板金は、柔軟性を有し、半導体素子３の電極５－１の熱膨張に追従して変形することができる。このため、接合面４において歪みがなく、冷熱ストレスが発生しない。したがって、このような構造によっても、先の実施の形態１、２と同様に、電気配線部における大電流容量化と、冷熱ストレスによる剥離の防止の両立を図ること可能となる。
　以上のように、実施の形態３によれば、板金を積層した構造の導電部材を採用している。この結果、柔軟性を有し、かつ表面積を増大させた導電部材を適用することができ、電気配線部における大電流容量化を図るとともに、冷熱ストレスによる接合部の剥離を防止し、半導体モジュールの信頼性向上を実現できる。
　実施の形態４．
　本実施の形態４では、先の図１の構成に対して、残留応力の発生を抑制するとともに、放熱性を向上させることのできる構成をさらに備えている半導体モジュールについて説明する。図２は、本発明の実施の形態４における半導体モジュールの断面図である。先の実施の形態１における図１の構成と比較すると、図２の構成は、冷却面６（冷却面構造部に相当）を備えている点が異なっている。そこで、この異なる構成を中心に、以下に説明する。
　本実施の形態４における導電部材２は、半導体素子３の上側電極５－１と、導電部材２の冷却面６と、電子部品の端子８とに接続されている。ここで、導電部材２としては、実施の形態１で説明した金属細線をより線とした導電部材、実施の形態２で説明した金属細線を網目状に編み込んだ導電部材、そして実施の形態３で説明した板金を積層した導電部材のいずれも適用可能である。
　本実施の形態４で新たに追加された冷却面６は、半導体素子の上側電極５－１に対して絶縁されており、積極的に冷却されている基板１、または放熱板７に接合されている。このような構造を有することにより、導電部材２は、半導体素子３と冷却面６の高さ方向の寸法公差を吸収することができる。このため、接合時に残留応力が発生しない。
　さらに、冷却面６を備えることで、導電部材２を介して半導体素子３を冷却することができる。したがって、放熱面積が増大することとなり、残留応力による導電部材２の剥離を抑制したうえで、放熱性を向上させることができる。
　以上のように、実施の形態４によれば、先の実施の形態１～３と同様の効果を得ることができる。さらに、冷却面を備えた構成とすることで、残留応力の発生を抑制できるとともに、放熱性を向上させた半導体モジュールを実現できる。
　実施の形態５．
　本実施の形態５では、基板１上に半導体素子３が複数配置されている際に、同一の導電部材２を用いて接続する構成について説明する。図３は、本発明の実施の形態５における半導体モジュールの断面図である。先の実施の形態１における図１の構成と比較すると、図３の構成は、基板１上に２つの半導体素子３が搭載されており、それら２つの半導体素子３が、１本の導電部材２により、共通して接続されている点が異なっている。そこで、この異なる構成を中心に、以下に説明する。
　本実施の形態５における半導体モジュール９は、基板１に２個以上の半導体素子３が配置されており（ただし、図３では、半導体素子３が２個の場合を例示）、同一の導電部材２を用いて、２個以上の半導体素子３を電気的に接続している。
　また、導電部材２と、それぞれの半導体素子３の上側電極５－１との接合面４は、超音波接合されている。超音波接合装置は、導電部材２に対して超音波振動を与えることで、接合面において摩擦熱を発生させ、導電部材２とそれぞれの半導体素子３を接合する。
　導電部材２としては、実施の形態１で説明した金属細線をより線とした導電部材、実施の形態２で説明した金属細線を網目状に編み込んだ導電部材、そして実施の形態３で説明した板金を積層した導電部材のいずれも適用可能である。また、図３では図示されていないが、先の実施の形態４における図２で説明したような冷却面６を設けて導電部材２を接合させることで、半導体素子３の放熱性を向上させることも可能である。
　以上のように、実施の形態５によれば、本発明の導電部材を用いて、複数の半導体素子を接続することによっても、先の実施の形態１～４と同様の効果を得ることができる。
　なお、導電部材２と接合面４（１１）との接合に、超音波接合を採用する場合における、本願発明に係る導電部材２のメリットについて、従来技術との比較に基づいて説明する。半導体素子３の電極５－１に対して、金属のプレートであるバスバを超音波接合する従来の半導体モジュールでは、接合する際に、バスバの面内方向における超音波振動が、もう一方の半導体素子３の電極５－３と、バスバとの接合面１１に伝播し、接合面１１における剥離が問題となっていた。
　これに対して、上述した実施の形態１～５に係る半導体モジュール９では、バスバの代わりに、柔軟性を揺する導電部材２が用いられている。従って、半導体素子３の電極５－１に対して導電部材２を超音波接合する際に、柔軟性を有する導電部材２によって超音波振動を吸収することができる。このため、半導体素子３の電極５－３と導電部材２との接合面１１における剥離を防止することができる。

Claims (6)

  1. 　基板もしくはバスバに配置された半導体素子を他の電子部品と電気的に接続させるために用いられる導電部材が、半導体素子との接合部における、導電部材と半導体素子との線膨張係数差による冷熱ストレスを低減し、接続対象の寸法公差を吸収できる柔軟性を有する構造を備える
    　半導体モジュール。
  2. 　請求項１に記載の半導体モジュールにおいて、
    　前記導電部材は、金属線をより線にした構造を備える
    　半導体モジュール。
  3. 　請求項１に記載の半導体モジュールにおいて、
    　前記導電部材は、金属細線を網目状に編み込んだ構造を備える
    　半導体モジュール。
  4. 　請求項１に記載の半導体モジュールにおいて、
    　前記導電部材は、板金を積層した構造を備える
    　半導体モジュール。
  5. 　請求項１から４のいずれか１項に記載の半導体モジュールにおいて、
    　前記基板もしくは前記バスバに配置されるとともに、前記半導体素子と絶縁されている冷却面構造部を有し、
    　前記導電部材は、前記冷却面構造部を経由して前記半導体素子と他の電子部品とに電気的に接続されている
    　半導体モジュール。
  6. 　請求項１から５のいずれか１項に記載の半導体モジュールにおいて、
    　前記導電部材は、前記半導体素子に対する接合方法として、超音波接合、はんだ接合、Ａｇシンター接合、導電接着剤による接合、拡散接合、ろう付けによる接合のいずれかが用いられている
    　半導体モジュール。
PCT/JP2014/060009 2014-04-04 2014-04-04 半導体モジュール WO2015151285A1 (ja)

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US15/126,609 US9853009B2 (en) 2014-04-04 2014-04-04 Semiconductor module having a conductor member for reducing thermal stress
CN201480077596.3A CN106133896B (zh) 2014-04-04 2014-04-04 半导体模块
EP18208036.6A EP3477690B1 (en) 2014-04-04 2014-04-04 Semiconductor module
EP14888393.7A EP3128541A4 (en) 2014-04-04 2014-04-04 Semiconductor module

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EP3477690B1 (en) 2024-01-24
US20170084568A1 (en) 2017-03-23
CN106133896A (zh) 2016-11-16
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EP3477690A1 (en) 2019-05-01
JPWO2015151285A1 (ja) 2017-04-13

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