JP2007012831A - パワー半導体装置 - Google Patents

パワー半導体装置 Download PDF

Info

Publication number
JP2007012831A
JP2007012831A JP2005190869A JP2005190869A JP2007012831A JP 2007012831 A JP2007012831 A JP 2007012831A JP 2005190869 A JP2005190869 A JP 2005190869A JP 2005190869 A JP2005190869 A JP 2005190869A JP 2007012831 A JP2007012831 A JP 2007012831A
Authority
JP
Japan
Prior art keywords
resin
power semiconductor
semiconductor device
semiconductor element
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005190869A
Other languages
English (en)
Inventor
Yoshihiko Koike
義彦 小池
Shinji Okubo
真司 大久保
Yasushi Toyoda
靖 豊田
Katsuaki Saito
克明 斉藤
Seiichi Hayakawa
誠一 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2005190869A priority Critical patent/JP2007012831A/ja
Priority to EP06013397A priority patent/EP1739740A3/en
Publication of JP2007012831A publication Critical patent/JP2007012831A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/404—Connecting portions
    • H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
    • H01L2224/40491—Connecting portions connected to auxiliary connecting means on the bonding areas being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4099—Auxiliary members for strap connectors, e.g. flow-barriers, spacers
    • H01L2224/40991—Auxiliary members for strap connectors, e.g. flow-barriers, spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/40992—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48991—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on the semiconductor or solid-state body to be connected
    • H01L2224/48992—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84201—Compression bonding
    • H01L2224/84205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

【課題】
金属ワイヤと半導体素子間の接合長寿命化と絶縁基板の絶縁耐量を向上したパワー半導体装置を提供すること。
【解決手段】
本発明のパワー半導体装置では、絶縁基板で金属回路を接合していない沿面部分と半導体素子と金属ワイヤとの接合界面部分にモジュール全体の絶縁を確保するために充填した樹脂とに比べ（１）膨張係数が小さく、（２）ヤング率が大きく、（３）絶縁耐量が高い電気絶縁性樹脂をコーティングし、コーティングした樹脂の厚さを、ワイヤの断面方向でコーティング樹脂の変曲点が、ワイヤの断面高さに対して１／４以下になる形状にした。
【選択図】図１

Description

本発明はパワー半導体装置に係り、特に大容量で高い信頼性を達成した高耐圧用半導体装置のモジュール構造に関する。
従来から、ＩＧＢＴ、ダイオード、ＧＴＯ等のパワー半導体素子を絶縁容器内に密封して構成したパワー半導体装置（パワー半導体モジュール）が知られている。これらの素子は、その耐圧や電流容量に応じて各種インバータ装置等に応用されている。中でもＩＧＢＴ素子は、電圧制御型の素子であり、制御が容易であること。大電流の高周波動作が可能であること等の利点を有している。また、多くの場合はモジュール底面金属基板と電流通電部がモジュール内部で電気的に絶縁された構造となっていて、インバータ装置への実装が容易なこともあり急速に応用範囲拡がってきている。
これらの半導体装置の基本構成はモジュール内部の絶縁基板に半導体素子を搭載し、電流容量に応じてモジュール内部で並列する半導体素子数を増やして対応させる。絶縁基板に搭載した素子は絶縁基板上の金属箔回路上にアルミワイヤにより接続される。モジュールの駆動時は半導体素子が発熱、冷却を繰り返す。この時、半導体素子上で接合したアルミワイヤとの界面が、温度変化による各部材の線膨張係数差 (Ｓｉ：３ppm／℃、Ａｌ：
２２ppm／℃)により応力が集中し、ワイヤ界面部分で亀裂が発生する。駆動期間が長くなると亀裂が進展し最終的には半導体素子とアルミワイヤの剥離が生じる。
これらの応力を低減させるために、特許文献１に示すように、アルミワイヤの接合位置を外周部、すなわち半導体素子内部で温度変化の小さい部分にすることで接合部の長寿命化を図ってきた。
一方、モジュール内部の絶縁は、絶縁基板の厚さと絶縁基板外周部の沿面距離とによって決まる。高い絶縁耐量が必要とされる用途で使用する場合には、絶縁基板の厚さを厚く、沿面距離を長くしていた。
特開平１０−３２２１８号公報（図１と、(００１３)段落の記載。）
上記従来技術においては以下のような問題点がある。アルミワイヤの長寿命化のためにアルミワイヤ接合部を半導体チップ外周部に配置するが、半導体素子の電流容量が大きくなると、アルミワイヤ１本当たりの電流密度に上限があるためにワイヤ本数を増やす必要があり、ＩＧＢＴチップ外周部だけの接合ではレイアウト上の限界が生じる。また還流ダイオードチップで同様に外周部だけにワイヤを配置させると、チップ上でのワイヤ接合部の間隔が大きくなり、異状動作時の最大許容電流（サージ電流）耐量が、半導体素子上の電極膜上で流れる電流がワイヤに達するまでに大きくなることで耐量が低下してしまう問題が生じる。
また、絶縁耐量の向上のために絶縁基板厚さを厚くすると、半導体素子の冷却効率が低下し、モジュールの熱抵抗を大きくし、駆動時の半導体素子温度が上昇し素子の寿命を低減させてしまう。また、絶縁耐量の向上のために沿面距離を広くすれば、モジュール内部で絶縁基板の占有する面積が増え、モジュール内部のレイアウトに制約が生じ、半導体素子を並列配置して大電流化する際の障害になる。
本発明の目的は、金属ワイヤと半導体素子間の接合長寿命化と絶縁基板の絶縁耐量を向上したパワー半導体装置を提供することである。
本発明のパワー半導体装置では前記問題を解決するため、絶縁基板で金属回路を接合していない沿面部分と半導体素子と金属ワイヤとの接合界面部分にモジュール全体の絶縁を確保するために充填した樹脂とに比べ（１）膨張係数が小さく、（２）ヤング率が大きく、（３）絶縁耐量が高い電気絶縁性樹脂をコーティングし、樹脂の厚さを、ワイヤの断面方向でコーティング樹脂の変曲点、すなわちコーティング樹脂の凹凸の向きが変化する点と半導体素子との間隔が、ワイヤの断面高さ（図４（ｃ）のｔ）に対して１／４以下になる形状にした。
本発明のパワー半導体装置では、半導体素子とアルミワイヤ接合部に電気絶縁性の第一の樹脂をコーティングして半導体素子の寿命を向上させた。また、絶縁基板沿面部分に第一の樹脂をコーティングすることで高い電気絶縁性を安定して得ることができ、同じ絶縁耐量であるならば絶縁基板の厚さを約１／２にすることができるので、熱抵抗を低くすることができる。
本発明パワー半導体装置では、半導体素子とアルミワイヤの界面に電気絶縁性の第一の樹脂をコートし、金属ワイヤの接合寿命を向上させて、モジュールの寿命を向上させることができる。また、絶縁基板の金属回路箔終端に第一の樹脂をコートすることにより、モジュールの絶縁耐量も向上させることができる。以下本発明の詳細を、図面を用いながら説明する。
図１は本実施例のパワー半導体モジュールであるＩＧＢＴモジュールの一部の断面図を示す。図１で、符号１０１はＩＧＢＴチップやダイオードチップなどの半導体素子、１０２はチップ下半田、１０３は絶縁基板、１０４と１０５は金属回路箔、１０６は絶縁回路基板、１０７は金属ワイヤであるアルミワイヤ、１０８は絶縁回路基板下半田、１０９は金属などの導電性のベース、１１０は端子、１１１は端子ブロック樹脂、１１２は端子ブロック、１１３は端子下半田、１１４は樹脂ケース、１１５は接着剤、１１６は第二の樹脂、１１７はモジュール内部の空間部、１１８は応力緩和ベンド部を示す。
図１に示すように、モジュール内部での絶縁性を確保するために、半導体素子１０１は、例えばＡｌＮやアルミナ、ＳｉＮなどのセラミックスからなる絶縁基板１０３の上下に金属回路箔１０４、１０５を接合した絶縁回路基板１０６に、チップ下半田１０２で接合した。ＩＧＢＴモジュールの電流容量を大きくするためには、この半導体素子１０１を同一の絶縁回路基板１０６に複数個搭載して、同一モジュール内部の並列動作素子数を増やす。
本実施例のＩＧＢＴモジュールでは、半導体素子１０１を絶縁回路基板１０６に接合した後、例えば第一の樹脂１２０であるポリアミドイミド系樹脂を、絶縁回路基板１０６の外周沿面部や、金属回路箔１０４の間に塗布し、硬化する。このポリアミドイミド系樹脂は電気絶縁性（以下絶縁性と略す。）樹脂であるので、このように絶縁回路基板１０６の外周沿面部や、金属回路箔１０４の間に配置しても絶縁耐量の劣化がない。
図２は絶縁回路基板１０６の沿面部分にポリアミドイミド系樹脂１２０−１を塗布した部分の平面図であり、図３はベース１０９などを含む断面図である。絶縁回路基板１０６上で絶縁耐量が必要な領域は、モジュールの外部端子１１０（図３では記載を省略）とモジュール裏面のベース１０９の間に試験電源３０１で電圧をかけた時に絶縁耐量が必要な、絶縁回路基板１０６の外周沿面部分（Ｅ）と、モジュールの駆動時に電圧差が生じるゲート回路１０４−１とエミッタ回路１０４−２間、エミッタ回路１０４−２とコレクタ回路１０４−３間（Ｆ）になる。金属回路箔間の絶縁耐量はモジュールの定格電圧によって決まる。しかし、絶縁基板１０３が薄い場合は、端子１１０とベース１０９間の絶縁特性検査時にも、半導体素子１０１搭載側の金属回路箔１０４と裏面側の金属回路箔１０５間にも絶縁基板１０３を介して発生する電界（Ｇ）によって、半導体素子搭載側の金属回路箔１０４に、例えばエッチングむらによる突起など電界が集中する部分が存在すると、絶縁基板１０３をコーティングする図３には示さない第二の樹脂１１６の劣化が発生して部分放電が発生する。部分放電の発生が直ちに絶縁破壊に至ることは無いが、破壊の前駆症状で、樹脂の劣化が進行すると絶縁破壊に至るため放電を防止する必要がある。このため金属回路箔１０４の間にも第一の樹脂であるポリアミドイミド系樹脂１２０−２をコーティングすることが有効になる。
ポリアミドイミド系樹脂１２０−１、１２０−２の塗布後に、例えばφ４００μｍのアルミワイヤ１０７を複数本数用いて半導体素子１０１と金属回路箔１０４との間を配線する。アルミワイヤ１０７で配線後、ポリアミドイミド系樹脂１２０−３を半導体素子１０１とアルミワイヤ１０７との接合部分に塗布、硬化する。図４にこの塗布部分の詳細を示す。ポリアミドイミド系樹脂１２０−３の塗布に必要な領域は接合部分の線膨張係数の差が大きい半導体素子１０１とアルミワイヤ１０７との接合部分になる。塗布した樹脂の厚さは２０〜２００μｍ程度で、Ｓｉである半導体素子１０１とアルミワイヤ１０７との線膨張係数差による応力を抑える充分な効果がある。ここで、塗布した樹脂の厚さとは、図４（ｃ）の断面図に示すように、半導体素子１０１とアルミワイヤ１０７との接合している角部Ｈから測った第一の樹脂であるポリアミドイミド系樹脂１２０−３表面の最も近い点（Ｉ）までの距離Ｌである。
なお、ポリアミドイミド系樹脂１２０−３を半導体素子１０１の表面に塗布しても素子特性に影響を与えることはないので、半導体素子１０１の全面、あるいは半導体素子１０１を搭載している絶縁回路基板１０６上の金属回路箔１０４の上に塗布されても問題ない。
本実施例のＩＧＢＴモジュールでは、半導体素子１０１とアルミワイヤ１０７の界面と、絶縁基板１０３の沿面部分に塗布する樹脂の材質を共通のポリアミドイミド系樹脂にしているので、例えば、アルミワイヤ１０７を半導体素子１０１に接合した後で、溶剤などを加えてポリアミドイミド系樹脂の粘度を下げて、半導体素子１０１とアルミワイヤ１０７界面及び絶縁基板１０３全面に塗布し、アルミワイヤ１０７下の金属回路箔１０４間の沿面部分に濡れ広げさせるといった、１回の塗布、硬化によっても構わない。
ポリアミドイミド系樹脂を塗布した絶縁回路基板１０６は絶縁回路基板下半田１０８により、例えば無酸素銅や銅合金、Ａｌ−ＳｉＣやＣｕ−Ｍｏからなる複合材のベース１０９上に接合される。モジュール内部の回路に接続した外部取出しの端子１１０と、フタを構成する端子ブロック樹脂１１１とが一体で形成された端子ブロック１１２をセットし、端子１１０と絶縁回路基板１０６とを端子下半田１１３で接合する。これらの構造の端子１１０には電気抵抗が小さく、熱伝導率が大きいＮｉメッキされた無酸素銅、銅合金などを使用する。
次に、ＩＧＢＴモジュールの外周を構成する樹脂ケース１１４を接着剤１１５によってベース１０９と接合し、モジュール内部の半導体素子１０１、アルミワイヤ１０７、端子１１０の絶縁を確保するために第二の樹脂１１６であるシリコーンゲルを注入する。この時、第二の樹脂１１６であるシリコーンゲルの樹脂ケース１１４内での熱膨張を吸収するためモジュール内部上面に空間部１１７を設ける。最後にモジュール内部の気密性を確保するために端子ブロック樹脂１１１と樹脂ケース１１４との間を接着剤１１９で密封させ半導体装置を完成させる。
表１に本実施例で使用した第一の樹脂と第二の樹脂の物性値を示す。
Figure 2007012831
第一の樹脂は、半導体素子１０１とアルミワイヤ１０７との線膨張係数差による歪を押さえ込むために、１５００ＭＰａ〜５０００ＭＰａのヤング率を必要とする。また、第一の樹脂の線膨張係数は４０ppm／℃〜６０ppm／℃の範囲が好ましい。第一の樹脂の線膨張係数がこの値より小さくても大きくても半導体素子１０１とアルミワイヤ１０７との歪が大きくなるので好ましくない。さらに、第一の樹脂は、電界が集中するエッチングむらによる突起などを直接被覆する場合もあるので絶縁耐量が１００ＫＶrms／mm以上であることが好ましい。また、本実施例では第二の樹脂のヤング率は第一の樹脂より小さな１ＭＰａ以下がよく、線膨張係数は２００ppm／℃〜５００ppm／℃の範囲が好ましい。第二の樹脂の線膨張係数がこの値より小さくても大きくても第一の樹脂との界面に歪が生じ、亀裂などが生じる場合があるので好ましくない。さらに、第二の樹脂は、電界が集中するエッチングむらによる突起などを直接被覆する場合が少なく第一の樹脂の上に配置するので絶縁耐量が１０〜３０ＫＶrms／mmの範囲であることが好ましく、第二の樹脂の絶縁耐量を第一の樹脂より上げてもモジュール全体の絶縁耐量の向上に寄与しない。
このように、本実施例に用いた第一の樹脂は絶縁耐量が高い樹脂であるので、絶縁基板沿面部分に塗布した時に高い絶縁耐量が得られる。上記の説明では第一の樹脂としてポリアミドイミド系樹脂を例にして説明したが、物性値が表１に示す範囲であれば、ポリアミド系樹脂や、エポキシ系樹脂等を使用しても同様な効果が得られる。
図５に半導体素子駆動時に半導体素子１０１とアルミワイヤ１０７との接合部をヤング率が異なる樹脂で覆った場合に、生じる歪を計算した結果を示す。アルミワイヤ１０７外周をヤング率の大きい（硬い）樹脂で覆った場合接合部の歪が低下し、接合部の長寿命化が達成できることが図５から分かる。
図６に樹脂コートを実施した本実施例のＩＧＢＴモジュールで駆動条件を模擬したパワーサイクル試験を実施した結果を示す。本実施例のＩＧＢＴモジュールでは、樹脂コートなしの従来技術のＩＧＢＴモジュールに比べ約５倍に破壊耐量が向上することが確認できた。
図７は本実施例のＩＧＢＴモジュールで第一の樹脂１２０−３の厚さを厚くした場合の断面図を示す。アルミワイヤ１０７に第一の樹脂を厚くコートすると第一の樹脂コート部と第二の樹脂コート部の界面７０１に応力が集中し、この部分で断線する可能性がある。このため、第一の樹脂１２０−３のコーティングは必要以上に厚くぬらないようにする必要がある。逆に第一の樹脂でアルミワイヤ全体をコートすることが出来ればワイヤ変形全体を抑えることができるので半導体素子の寿命を向上させることができる。但し、図１のように大容量であるために、主端子の応力を緩和するための応力緩和ベンド部１１８が必要な構造ではモジュール全体を線膨張係数が大きく、ヤング率が大きな樹脂で充填することはモジュール全体の反りが大きくなる。このため、絶縁基板の割れ、モジュール実装時のグリース厚さの増大による接触熱抵抗の増加などが生じる。これらの理由から、金属ワイヤの接合界面をコーティングする部分の樹脂の厚さがワイヤの断面方向でコーティング樹脂の変曲点、すなわちコーティング樹脂の凹凸の向きが変化する点と半導体素子との間隔が、ワイヤの断面高さ（図４（ｃ）のｔ）に対して１／４以下であることが望ましい。この変曲点の位置が１／４以上の高さにあると、図４（ｃ）に示す第一の樹脂が薄くなり、半導体素子とアルミワイヤ接合部との信頼性を高くできない。変曲点と半導体素子との間隔は、第一の樹脂のコーティング時の表面張力にも依存するが、ワイヤの断面高さ（図４（ｃ）のｔ）に対して１／４〜１／１０の範囲にあれば良く、好ましくは１／５〜１／１０の範囲にあれば十分である。
図８は本発明の樹脂コーティングを半導体パワーモジュールの金属ワイヤ以外に適用した実施例を示す。本実施例のＩＧＢＴモジュールでは、実施例１のアルミワイヤ１０７に代えて金属リボン８０１を備えた点が異なり、それ以外は実施例１と同様である。パワー半導体モジュールでは、金属ワイヤ以外にも例えばＡｌ材からなる金属リボン８０１を超音波で接合した場合にも、実施例１でアルミワイヤ１０７で接合した場合と同じメカニズムでＡｌ／Ｓｉの接合界面が熱応力歪で劣化することがあるので、第一の樹脂１２０を図８（ａ）に示すようにコーティングすることで実施例１と同様にモジュールを長寿命化できる。
また、図８（ｂ）に示すように、超音波接合以外に金属電極８０２を半田８０３、８０５、応力緩衝板８０４を介して接合する場合でも、半導体素子１０１を駆動する時の温度変化が大きいことと、半導体素子１０１との応力差が大きいことで電極の半田８０３部分が最も早く劣化する。この時も半田８０３の接合部分を第一の樹脂１２０でコーティングすることで、半田８０３の劣化を抑えてモジュールを長寿命化することができる。
図９は実施例１と同じポリアミドイミド系樹脂を第一の樹脂として絶縁基板１０３の沿面部に塗布した試料で絶縁試験を実施した結果を示す。第一の樹脂１２０でコートすることで同じ絶縁耐量を約１／２の絶縁基板１０３の厚さで得られる。これにより、半導体パワーモジュールの熱抵抗を低減できる。
実施例１のパワー半導体モジュールの断面図である。 実施例１のパワー半導体モジュールの絶縁基板上へのコーティングを説明する平面図。 実施例１のパワー半導体モジュールの絶縁基板上へのコーティングを説明する断面図。 実施例１のパワー半導体モジュールのアルミワイヤへのコーティングの説明図。 実施例１のパワー半導体モジュールのコーティング樹脂のヤング率と歪との関係の計算結果の説明図。 実施例１のパワー半導体モジュールの寿命試験の説明図。 実施例１のパワー半導体モジュールでアルミワイヤへのコーティングが厚い場合の説明図。 実施例２のパワー半導体モジュールの説明図。 実施例２の別のパワー半導体モジュールの説明図。
符号の説明
１０１…半導体素子、１０２…チップ下半田、１０３…絶縁基板、１０４、１０５…金属回路箔、１０４−１…ゲート回路、１０４−２…エミッタ回路、１０４−３…コレクタ回路、１０６…絶縁回路基板、１０７…アルミワイヤ、１０８…絶縁回路基板下半田、１０９…ベース、１１０…端子、１１１…端子ブロック樹脂、１１２…端子ブロック、１１３…端子下半田、１１４…樹脂ケース、１１５、１１９…接着剤、１１６…第二の樹脂、１１７…空間部、１１８…応力緩和ベンド部、１２０…第一の樹脂、１２０−１〜１２０−３…ポリアミドイミド系樹脂、３０１…試験電源、７０１…第一の樹脂コード部と第二の樹脂コード部の界面、８０１…金属リボン、８０２…金属電極、８０３、８０５…半田、８０４…応力緩衝板。

Claims (8)

  1. 底面に配置した金属基板と、側面部と上面部とを覆う有機樹脂部材と、前記金属基板に第一の金属回路箔を介して一方の面を接合した絶縁基板と、該絶縁基板の他方の面に第二の金属回路箔を介して接合した半導体素子とを備えたパワー半導体装置において、
    該パワー半導体装置が、前記絶縁基板の他方の面に第三の金属回路箔を配置してあり、
    該第三の金属回路箔と前記半導体素子とが金属ワイヤで接続されており、
    該半導体素子と金属ワイヤとの接続部が絶縁性の第一の樹脂で被覆され、
    該接続部を被覆する第一の樹脂の表面の変曲点が、前記接続部の金属ワイヤの断面高さの１／４より半導体素子に近い位置にあることを特徴とするパワー半導体装置。
  2. 請求項１に記載のパワー半導体装置において、前記第一の樹脂が第二の樹脂で被覆されていることを特徴とするパワー半導体装置。
  3. 請求項２に記載のパワー半導体装置において、前記第一の樹脂のヤング率が前記第二の樹脂のヤング率より大きいことを特徴とするパワー半導体装置。
  4. 請求項２に記載のパワー半導体装置において、前記第一の樹脂のヤング率が１５００〜５０００ＭＰａであることを特徴とするパワー半導体装置。
  5. 請求項２に記載のパワー半導体装置において、前記第一の樹脂がポリアミド系樹脂あるいはポリアミドイミド系樹脂であることを特徴とするパワー半導体装置。
  6. 請求項２に記載のパワー半導体装置において、前記第二の樹脂がシリコーンゲルであることを特徴とするパワー半導体装置。
  7. 請求項１に記載のパワー半導体装置において、前記縁基板の他方の面の周縁部が前記第一の樹脂で被覆されていることを特徴とするパワー半導体装置。
  8. 請求項１に記載のパワー半導体装置において、前記縁基板の他方の面に配置した前記第二の金属回路箔と前記第三に金属回路箔との間の絶縁基板面が前記第一の樹脂で被覆されていることを特徴とするパワー半導体装置。
JP2005190869A 2005-06-30 2005-06-30 パワー半導体装置 Pending JP2007012831A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005190869A JP2007012831A (ja) 2005-06-30 2005-06-30 パワー半導体装置
EP06013397A EP1739740A3 (en) 2005-06-30 2006-06-28 Power semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005190869A JP2007012831A (ja) 2005-06-30 2005-06-30 パワー半導体装置

Publications (1)

Publication Number Publication Date
JP2007012831A true JP2007012831A (ja) 2007-01-18

Family

ID=37057117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005190869A Pending JP2007012831A (ja) 2005-06-30 2005-06-30 パワー半導体装置

Country Status (2)

Country Link
EP (1) EP1739740A3 (ja)
JP (1) JP2007012831A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008005693A1 (de) 2007-01-23 2008-07-24 NGK Spark Plug Co., Ltd., Nagoya Vorrichtung und Verfahren zum Detektieren von brennbarem Gas in einer zu detektierenden Atmosphäre
JP2012015222A (ja) * 2010-06-30 2012-01-19 Hitachi Ltd 半導体装置
WO2013054408A1 (ja) 2011-10-12 2013-04-18 日本碍子株式会社 大容量モジュールの周辺回路用の回路基板、及び当該回路基板を用いる周辺回路を含む大容量モジュール
WO2013084334A1 (ja) 2011-12-08 2013-06-13 日本碍子株式会社 大容量モジュール用基板、及び当該基板の製造方法
DE112014006759B4 (de) 2014-07-30 2019-02-21 Hitachi, Ltd. Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung und Leistungsumsetzungsvorrichtung
JPWO2021111563A1 (ja) * 2019-12-04 2021-06-10
CN113206049A (zh) * 2020-01-31 2021-08-03 株式会社东芝 半导体装置
US11587861B2 (en) 2020-03-30 2023-02-21 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method thereof
DE112019007366B4 (de) 2019-05-30 2023-08-03 Mitsubishi Electric Corporation Leistungshalbleitermodul und leistungswandler

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5767921B2 (ja) * 2011-09-15 2015-08-26 新電元工業株式会社 半導体装置
WO2018141813A1 (en) 2017-02-03 2018-08-09 Abb Schweiz Ag Power semiconductor module
WO2021002132A1 (ja) * 2019-07-03 2021-01-07 富士電機株式会社 半導体モジュールの回路構造

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821850A (ja) * 1981-08-03 1983-02-08 Mitsubishi Electric Corp 樹脂封止型半導体装置
JPS5850759A (ja) * 1981-09-21 1983-03-25 Nec Corp 樹脂封止形半導体装置
JPH0244738A (ja) * 1988-08-05 1990-02-14 Semiconductor Energy Lab Co Ltd 電子装置作製方法
US5525839A (en) * 1994-12-30 1996-06-11 Vlsi Technology, Inc. Method of packing an IC die in a molded plastic employing an ultra-thin die coating process
JP3269745B2 (ja) * 1995-01-17 2002-04-02 株式会社日立製作所 モジュール型半導体装置
KR100202668B1 (ko) * 1996-07-30 1999-07-01 구본준 크랙 방지를 위한 반도체 패키지와 그 제조방법 및 제조장치

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008005693A1 (de) 2007-01-23 2008-07-24 NGK Spark Plug Co., Ltd., Nagoya Vorrichtung und Verfahren zum Detektieren von brennbarem Gas in einer zu detektierenden Atmosphäre
JP2012015222A (ja) * 2010-06-30 2012-01-19 Hitachi Ltd 半導体装置
WO2013054408A1 (ja) 2011-10-12 2013-04-18 日本碍子株式会社 大容量モジュールの周辺回路用の回路基板、及び当該回路基板を用いる周辺回路を含む大容量モジュール
US9064758B2 (en) 2011-10-12 2015-06-23 Ngk Insulators, Ltd. High-capacity module including the peripheral circuit using the circuit board and the circuit board concerned for peripheral circuits of a high-capacity module
WO2013084334A1 (ja) 2011-12-08 2013-06-13 日本碍子株式会社 大容量モジュール用基板、及び当該基板の製造方法
US9012786B2 (en) 2011-12-08 2015-04-21 Ngk Insulators, Ltd. Circuit board for high-capacity modules, and a production method of the circuit board
DE112014006759B4 (de) 2014-07-30 2019-02-21 Hitachi, Ltd. Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung und Leistungsumsetzungsvorrichtung
DE112019007366B4 (de) 2019-05-30 2023-08-03 Mitsubishi Electric Corporation Leistungshalbleitermodul und leistungswandler
US11855033B2 (en) 2019-05-30 2023-12-26 Mitsubishi Electric Corporation Power semiconductor module and power converter
WO2021111563A1 (ja) * 2019-12-04 2021-06-10 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP7270772B2 (ja) 2019-12-04 2023-05-10 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JPWO2021111563A1 (ja) * 2019-12-04 2021-06-10
JP2021125477A (ja) * 2020-01-31 2021-08-30 株式会社東芝 半導体装置
US11616024B2 (en) 2020-01-31 2023-03-28 Kabushiki Kaisha Toshiba Storage device including semiconductor chips sealed with resin on metal plate
CN113206049A (zh) * 2020-01-31 2021-08-03 株式会社东芝 半导体装置
US11587861B2 (en) 2020-03-30 2023-02-21 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
EP1739740A3 (en) 2008-04-09
EP1739740A2 (en) 2007-01-03

Similar Documents

Publication Publication Date Title
JP2007012831A (ja) パワー半導体装置
US9171773B2 (en) Semiconductor device
JP6233507B2 (ja) パワー半導体モジュールおよび複合モジュール
JP5212417B2 (ja) パワー半導体モジュール
US9129931B2 (en) Power semiconductor module and power unit device
JP6398270B2 (ja) 半導体装置
JP2006134990A (ja) 半導体装置
WO2018194153A1 (ja) 電力用半導体モジュール、電子部品および電力用半導体モジュールの製造方法
JP2012256746A (ja) 半導体装置
JP6885175B2 (ja) 半導体装置
JP6540326B2 (ja) 半導体装置およびその製造方法
US10959333B2 (en) Semiconductor device
JP2012253125A (ja) 半導体装置及び配線基板
JP2012015222A (ja) 半導体装置
JP6125089B2 (ja) パワー半導体モジュールおよびパワーユニット
JP6826665B2 (ja) 半導体装置、半導体装置の製造方法及び電力変換装置
US20220051960A1 (en) Power Semiconductor Module Arrangement and Method for Producing the Same
JP6248803B2 (ja) パワー半導体モジュール
JP2020174156A (ja) 半導体装置および半導体装置の製造方法
JP2007329387A (ja) 半導体装置
JP2018186220A (ja) 半導体装置
JP5840102B2 (ja) 電力用半導体装置
WO2015104808A1 (ja) パワー半導体装置および電力変換装置
JP7419781B2 (ja) 半導体モジュール
JP7170614B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070606

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090721

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090924

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091027

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100309