WO2015093216A1 - Dispositif d'incinération et procédé d'incinération - Google Patents

Dispositif d'incinération et procédé d'incinération Download PDF

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Publication number
WO2015093216A1
WO2015093216A1 PCT/JP2014/080503 JP2014080503W WO2015093216A1 WO 2015093216 A1 WO2015093216 A1 WO 2015093216A1 JP 2014080503 W JP2014080503 W JP 2014080503W WO 2015093216 A1 WO2015093216 A1 WO 2015093216A1
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WIPO (PCT)
Prior art keywords
processing
flow rate
processing gas
gas
ashing
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PCT/JP2014/080503
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English (en)
Japanese (ja)
Inventor
広瀬　賢一
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ウシオ電機株式会社
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Publication of WO2015093216A1 publication Critical patent/WO2015093216A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom

Definitions

  • the present invention relates to an ashing apparatus and an ashing method for removing smears (residues) on a substrate using an ultraviolet lamp, and in particular, treating smears made of organic matter remaining on a substrate in a wiring board manufacturing process or the like.
  • the present invention relates to an ashing apparatus and an ashing method suitable for the above.
  • a multilayer wiring board in which insulating layers and wiring conductors are alternately stacked is known.
  • a build-up method is known, and a lower wiring conductor formed on a lower insulating layer, and an upper insulating layer laminated on the lower insulating layer and the lower wiring conductor.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2010-205801
  • FIG. 8 shows a part of the manufacturing method of the multilayer wiring board disclosed in Patent Document 1.
  • A An upper insulating layer 23 including the wiring conductor 22 is formed on the lower insulating layer 21.
  • the via hole 24 is formed by removing a part of the upper insulating layer 23 by, for example, a laser or a drill. At this time, smear (residue) S resulting from the material of the upper insulating layer 23 inevitably remains.
  • C In order to remove the smear S, for example, a desmear (smear removal) treatment is performed by dissolving with an alkaline solution to expose the upper surface of the wiring conductor 22.
  • the entire substrate needs to be processed in a wet manner irrespective of the original substrate manufacturing process of dissolving in an alkaline solution. There is a problem of being bad. There is also a problem that the processing cost of the used high-concentration alkaline waste liquid and the processing cost of the low-concentration alkaline waste liquid used for rinsing thereafter are high.
  • an ashing processing apparatus that includes a lamp that radiates light and irradiates light (vacuum ultraviolet light) to a workpiece through a quartz glass window.
  • the ashing processing apparatus disclosed in Patent Document 2 accommodates an ultraviolet lamp in a protective tube, arranges a work in a chamber, and performs an ashing process for each sheet.
  • the ashing apparatus described in this document is a mechanism for performing ashing by exhausting while introducing an inert gas into the chamber or by exhausting only the interior of the chamber.
  • JP 2010-205801 A Japanese Patent Laid-Open No. 2007-22796 JP 2011-181535 A
  • the ozone treatment (ashing) ability with ultraviolet rays increases when the irradiation distance between the light source (lamp) and the object to be treated is shortened. And when the irradiation distance is close (specifically, 3 mm or less), for example, when oxygen is used as a processing gas, it is also found that if the oxygen concentration is increased (50% or more), the processing capacity further increases. ing.
  • the present invention is an ultraviolet transmission that contains a processing chamber in which an object to be processed is disposed, and an ultraviolet lamp that irradiates the object to be processed with ultraviolet rays, and partitions the processing chamber.
  • an ashing apparatus and an ashing method comprising: a lamp chamber having a conductive window member; and a processing gas supply means for supplying a processing gas to a processing space formed between the processing object and the window member. It is an object of the present invention to provide a configuration in which processing unevenness does not occur when the smear is removed.
  • the processing gas supply means can supply a processing gas having an appropriate flow rate for performing processing, and a processing gas having a large flow rate exceeding the appropriate flow rate.
  • a control unit capable of supplying gas, intermittently supplying the processing gas at a large flow rate, and cleaning the exhaust gas (carbon dioxide gas) generated in the processing space at regular intervals to replace the processing gas. It is characterized by.
  • the ratio (substitution rate A / V) of the total flow rate (A) of the large flow rate processing gas supplied intermittently to the volume (V) of the processing space is 0.64 or more.
  • the processing gas supply means supplies the processing gas flow rate supplied during the high flow processing gas supply period at least twice as much as the appropriate flow rate supply.
  • the processing gas supply means supplies the large flow rate of processing gas to replace the processing space with the processing gas before irradiating the object to be processed with ultraviolet rays, and then switches to an appropriate flow rate. It is characterized by irradiating with ultraviolet rays.
  • the ashing method according to the present invention includes an appropriate flow rate supplying step of supplying the process gas into the process space by an appropriate flow rate, and intermittently supplying a large flow of process gas exceeding the appropriate flow rate, And a large flow rate supplying step of replacing the processing space with the processing gas.
  • the ashing apparatus and the ashing method of the present invention by intermittently supplying a large flow rate of processing gas with respect to an appropriate flow rate of processing gas for performing normal processing, it is generated at the time of smear removal and accumulated in the processing space.
  • the exhaust gas carbon dioxide gas
  • the processing gas oxygen
  • the processing in the processing space is performed accurately and promptly. Therefore, accurate smear removal can be achieved without causing unevenness.
  • a large flow rate of processing gas can be supplied, by supplying the large flow rate processing gas before the processing process, that is, before the irradiation with the ultraviolet lamp, the replacement of the processing space with the processing gas is quickly performed. There is also an effect that the preparation time before the irradiation treatment can be performed in a short time.
  • FIG. 3 is a timing chart illustrating an embodiment of the present invention. Explanatory drawing of an effect
  • FIG. 1 is a sectional view showing the structure of the ashing device of the present invention.
  • the ashing apparatus 1 includes a processing chamber 2 in which an object to be processed W is disposed, and a lamp chamber 3 in which a plurality of ultraviolet lamps 4 and 4 for irradiating the object to be processed W with ultraviolet rays are accommodated.
  • a processing chamber 2 in which an object to be processed W is disposed
  • a lamp chamber 3 in which a plurality of ultraviolet lamps 4 and 4 for irradiating the object to be processed W with ultraviolet rays are accommodated.
  • an ultraviolet transmissive window member 5 such as quartz glass is provided so as to face the processing chamber 2.
  • a reflecting mirror 6 is provided above the ultraviolet lamp 4 in the lamp chamber 3, and the inside of the lamp chamber 3 is maintained in an inert gas atmosphere such as nitrogen gas.
  • the ultraviolet lamp 4 emits vacuum ultraviolet light (ultraviolet light having a wavelength of 200 nm or less), and various known lamps can be used.
  • a xenon excimer lamp (wavelength 172 nm) enclosing xenon gas, a low-pressure mercury lamp.
  • a xenon excimer lamp is suitable for use in this type of ashing apparatus.
  • the processing chamber 2 is provided with a stage 8 for placing the workpiece W in the housing 7, and the lamp chamber 3 and the housing 7 of the processing chamber 2 are assembled in an airtight manner, and the window member A sealed processing space 10 for accommodating the workpiece W is formed by the stage 5 and the stage 8.
  • the workpiece W is, for example, a flat multilayer wiring board, the surface of which is formed of an insulating layer 23, and an opening 24 including a via hole formed in the insulating layer 23, and an opening 24.
  • smear (residue) S composed of the same material as that of the insulating layer 23.
  • the processed product W is disposed on the stage 8 disposed to face the window member 5 of the lamp chamber 3.
  • the wiring substrate as the object to be processed W is disposed in a manner (in the upper side in the figure) in which the smear is exposed to the processing space 10 so that the smear is exposed to the processing gas and is irradiated with the light from the ultraviolet lamp 4.
  • the One side edge portion of the stage 8 is provided with a supply port 11 for supplying a processing gas, and the other side edge portion is provided with an exhaust port 12, so that the processing gas flowing in the processing space 10 is irradiated with ultraviolet rays.
  • the generated ozone gas, carbon dioxide gas generated by the decomposition of smear, and the like are collected from the exhaust port 12.
  • a processing gas supply means 13 is connected to the air supply port 11 to supply a predetermined processing gas.
  • the processing gas supply means 13 includes a processing gas supply unit 14 such as a gas tank, a control unit 15, a flow rate adjustment valve 16, and the like
  • the shape of the openings of the air supply port 11 and the exhaust port 12 is, for example, an elongated slit shape along the tube axis direction of the lamp 4, and when the size of the workpiece W is 500 mm ⁇ 500 mm, the air supply port
  • the size of 11 is, for example, 3 mm ⁇ 600 mm
  • the size of the exhaust port 12 is, for example, 10 mm ⁇ 600 mm.
  • the total opening area of the exhaust port 12 is preferably larger than the total opening area of the air supply port 11.
  • the large opening on the discharge side makes it possible to form a uniform flow in one direction from the air supply port 11 side to the exhaust port 12 side without causing the gas flow to stagnate in the processing space, thereby stabilizing the flow. Can be maintained.
  • the processing gas is supplied from one side edge portion of the partitioned processing space 10 and exhausted from the other side edge portion, whereby the gas is directed to the surface of the workpiece W from one side to the other. Flows and the processing gas is spread over the entire workpiece W, so that the occurrence of processing unevenness is reduced.
  • the processing gas is specifically oxygen gas. Moreover, it is good also as mixed gas which mixed inert gas with this oxygen gas.
  • the preferred oxygen concentration is 50% or more, more preferably 70% or more, and most preferably 90% or more.
  • the control unit 15 of the processing gas supply means 13 supplies a processing gas (oxygen gas) into the processing space 10 at a predetermined appropriate flow rate during normal processing, and intermittently supplies a processing gas having a flow rate larger than the appropriate flow rate. It is controlled to supply.
  • the proper flow rate is a flow rate capable of properly removing smear remaining on the object to be processed in a certain time, and includes the volume of the processing space 10, the material and size of the object W, the surface of the object W to be processed, and the like. It is determined by the distance from the window member 5, the output illuminance of the ultraviolet lamp 4, and the processing gas concentration.
  • the significance of the appropriate flow rate is as follows. If the processing gas is excessively supplied beyond the upper limit of the appropriate flow rate, the gas flow rate becomes too fast, and the active species (active oxygen and ozone gas) generated from the processing gas are immediately flown to the exhaust port, and the surface of the object to be processed The probability of contributing to the smear removal reaction is reduced. As a result, the processing efficiency (processing efficiency compared with the lamp energy and the total gas amount) deteriorates. On the other hand, when the supply amount of the processing gas is lower than the lower limit of the appropriate flow rate, immediately after the start of the ashing process, active species (active oxygen and ozone gas) generated by the reaction of the processing gas and ultraviolet rays act on smear and are removed.
  • the concentration of carbon dioxide gas generated due to the smear composition gradually becomes higher, the ultraviolet transmittance is deteriorated. As a result, generation of active species and irradiation of ultraviolet rays to the object to be processed become incomplete, leading to a decrease in efficiency. Therefore, the flow rate of the gas is in an appropriate range so that the processing efficiency is maintained above a certain level because the processing efficiency varies depending on the flow rate of the processing gas (active species) and the residual gas (carbon dioxide gas) after the reaction. (Upper limit value and lower limit value) are determined.
  • the ashing device supplies the processing gas at a constant appropriate flow rate while the workpiece is irradiated with ultraviolet rays during the ashing period, and intermittently (periodically) the constant appropriate flow rate.
  • the processing gas is supplied at a large flow rate exceeding. That is, a large flow rate of processing gas is intermittently supplied while an appropriate flow rate of gas is supplied. In this way, the flow rate of the processing gas is changed and the gas flow rate is increased within the processing process time by removing the carbon dioxide gas staying on the object to be processed from the exhaust port and removing the atmosphere in the processing space. Is replaced with the processing gas to refresh the processing gas concentration on the object to be processed to a constant high concentration. By repeating this process at an appropriate frequency, the processing capability can be improved and the occurrence of processing unevenness can be suppressed.
  • the large flow rate is, for example, a flow rate that is twice or more the appropriate flow rate.
  • FIG. 2 shows a timing chart for supplying an intermittent large flow rate of processing gas in relation to lamp lighting.
  • the horizontal axis represents time, and the vertical axis represents the supply amount of processing gas (liter / minute).
  • Times T1 to T4 are respectively T1: proper flow gas supply time (seconds), T2: large flow gas supply time (seconds), T3: initial replacement time (seconds), and T4: process time (seconds).
  • the processing gas is supplied in a state where the lamp is turned off, and the gas in the processing space is replaced to form a processing gas atmosphere.
  • This initial replacement time T3 can be shortened by setting the flow rate adjustment valve 16 to the large flow rate Q2 and supplying the processing gas.
  • the gas atmosphere in the processing space reaches the processing gas concentration, for example, 90% (or higher)
  • the replacement is completed and the ashing process is started.
  • the lamp is turned on while supplying a gas at an appropriate flow rate (constant amount) Q1 (the gas is supplied at an appropriate flow rate to turn on the lamp).
  • the appropriate gas flow rate supply time T1 elapses, the supply amount of the gas is changed and the supply of the gas with the large flow rate Q2 is started.
  • the gas After the passage of the large flow rate gas supply time T2, the gas is supplied again by returning to the proper flow rate Q1. In this way, the period of T1 and T2 is alternately repeated by supplying the processing gas at the high flow rate Q2 intermittently while supplying the processing gas at the appropriate flow rate Q1 while the object to be processed is irradiated with ultraviolet rays. After the entire process is completed, the gas supply is stopped by turning off the lamp.
  • FIG. 3 is a diagram schematically showing the state of the processing space at each time point indicated by arrows A, B, and C in the timing chart.
  • T3 Immediately after the passage of the initial replacement time (T3), the lamp is in an initial lighting state, and the processing gas occupies most of the atmosphere in the processing space 10, and the ultraviolet rays that have passed through the window member 5 are processed gas and the workpiece W. Is efficiently decomposed.
  • the processing gas occupies most of the atmosphere and smear is efficiently decomposed throughout the entire processing object, the processing of the processing object is performed periodically.
  • the processing gas is uniformly processed on the upstream side (air supply port side) and the downstream side (exhaust port side), and unevenness is less likely to occur on the entire processing surface.
  • T2 the period during which the gas having the large flow rate Q2 is supplied, since the gas is supplied in excess of the appropriate flow rate Q1, it is difficult to disassemble the smear temporarily. As a result, the processing efficiency can be improved.
  • Processing stage 650 ⁇ 650 mm, thickness 20 mm.
  • a processing gas supply port and an exhaust port are provided, and the width of the gas flow path is 510 mm.
  • the gap (separation distance) between the workpiece and the window member is 0.5 mm.
  • the stage is heated to 120 ° C by an attached heater.
  • the processing gas is 100% oxygen gas.
  • the appropriate flow rate Q1 is 0.3 liter / min.
  • the lamp chamber was purged with about 100 Nl / min of N 2 gas. As a result, the attenuation of ultraviolet rays in the lamp chamber was reduced as much as possible.
  • the process gas was processed at an appropriate flow rate Q1 of 0.3 liter / min and kept flowing at a constant flow rate for 200 seconds.
  • the large flow rate Q2 was changed with respect to the appropriate flow rate Q1 (0.3 liter / min), and the supply time T2 and the number of repetitions were also changed.
  • the uniformity of the treatment was determined by comparing the remaining amount of carbon (C) at the bottom of the via hole.
  • EDX analysis was performed.
  • ⁇ Device Scanning electron microscope (SU-70, manufactured by Hitachi High-Technologies Corporation)
  • Acceleration voltage 10kV An area of about ⁇ 4.5 ⁇ m was measured near the center of the via hole.
  • the observation positions were three points upstream (30 mm from the end), center, and downstream (30 mm from the end) of the processing gas flow.
  • the Cu strength of the Cu wiring 22 underlying the insulating layer and the C strength of the smear component at the bottom of the via hole 24 were measured. After the strength was converted into mass, the mass concentration ratio of C / Cu was compared.
  • the C / Cu ratio in the unsmeared state was 0.80.
  • the irradiation time that cannot be completely removed is set to about 200 s, the entire process time in each experimental example and the comparative example is made constant, the processing ability and uniformity within the same time are measured, and evaluation and determination are performed. I decided to do it.
  • a large flow rate of processing gas exceeding the proper flow rate is intermittently supplied during a treatment period in which an ultraviolet ray is irradiated by flowing a treatment gas of an appropriate flow rate for performing the treatment.
  • the exhaust gas (carbon dioxide) generated in the processing space at regular intervals is wiped out and replaced with the processing gas, so that the uniformity of processing of the object to be processed is improved and the processing time is shortened. Can be achieved. Further, by using the large flow rate processing gas for the replacement work of the atmosphere in the processing space in the previous stage of the processing process, the initial replacement time can be shortened.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'objectif de l'invention est de résoudre le problème lié à la réalisation d'une constitution telle qu'aucun défaut d'uniformité de traitement ne se produit quand un objet à traiter est traité pour le retrait de maculage dans un dispositif d'incinération et à un procédé d'incinération comportant : une chambre de traitement dans laquelle est disposé l'objet à traiter ; une chambre de lampe comprenant un organe de fenêtre perméable aux UV permettant de séparer une lampe UV logée dans la chambre, laquelle projette de la lumière UV sur l'objet à traiter, de la chambre de traitement ; et un moyen d'injection de gaz de traitement permettant d'injecter un gaz de traitement dans un espace de traitement formé entre l'objet à traiter et l'organe de fenêtre. La solution selon l'invention est caractérisée en ce que le moyen d'injection de gaz de traitement : comprend une unité de commande qui peut injecter un volume d'écoulement approprié de gaz de traitement permettant d'effectuer le traitement et qui peut injecter un important volume d'écoulement de gaz de traitement qui dépasse ledit volume d'écoulement approprié ; injecte par intermittence l'important volume d'écoulement de gaz de traitement ; et, à un intervalle de temps régulier, purge et substitue le gaz de traitement à un gaz d'échappement (dioxyde de carbone) généré à l'intérieur de l'espace de traitement.
PCT/JP2014/080503 2013-12-18 2014-11-18 Dispositif d'incinération et procédé d'incinération WO2015093216A1 (fr)

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JP2013260842A JP6183202B2 (ja) 2013-12-18 2013-12-18 アッシング装置およびアッシング方法
JP2013-260842 2013-12-18

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017123413A (ja) * 2016-01-08 2017-07-13 ウシオ電機株式会社 紫外線処理装置および紫外線処理方法
JP2017157758A (ja) * 2016-03-03 2017-09-07 ウシオ電機株式会社 配線基板の製造方法および配線基板
JP2019197931A (ja) * 2019-08-21 2019-11-14 ウシオ電機株式会社 紫外線処理装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH10280151A (ja) * 1997-04-08 1998-10-20 Fujitsu Ltd Ｃｖｄ装置のクリーニング方法
JP2007208194A (ja) * 2006-02-06 2007-08-16 Tokyo Electron Ltd ガス供給装置，基板処理装置，ガス供給方法
JP2007227496A (ja) * 2006-02-22 2007-09-06 Pre-Tech Co Ltd アッシング処理装置およびアッシング処理方法
JP2010027702A (ja) * 2008-07-16 2010-02-04 Hitachi Kokusai Electric Inc 基板処理装置及び薄膜生成方法

Family Cites Families (1)

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Publication number Priority date Publication date Assignee Title
JP5461148B2 (ja) * 2009-11-05 2014-04-02 株式会社日立ハイテクノロジーズ プラズマエッチング方法及び装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10280151A (ja) * 1997-04-08 1998-10-20 Fujitsu Ltd Ｃｖｄ装置のクリーニング方法
JP2007208194A (ja) * 2006-02-06 2007-08-16 Tokyo Electron Ltd ガス供給装置，基板処理装置，ガス供給方法
JP2007227496A (ja) * 2006-02-22 2007-09-06 Pre-Tech Co Ltd アッシング処理装置およびアッシング処理方法
JP2010027702A (ja) * 2008-07-16 2010-02-04 Hitachi Kokusai Electric Inc 基板処理装置及び薄膜生成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017123413A (ja) * 2016-01-08 2017-07-13 ウシオ電機株式会社 紫外線処理装置および紫外線処理方法
JP2017157758A (ja) * 2016-03-03 2017-09-07 ウシオ電機株式会社 配線基板の製造方法および配線基板
WO2017150435A1 (fr) * 2016-03-03 2017-09-08 ウシオ電機株式会社 Procédé de fabrication de tableau de connexions et tableau de connexions
US10905012B2 (en) 2016-03-03 2021-01-26 Ushio Denki Kabushiki Kaisha Method for producing wiring board, and wiring board
JP2019197931A (ja) * 2019-08-21 2019-11-14 ウシオ電機株式会社 紫外線処理装置

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