WO2014176822A1 - 曝光***、曝光方法和掩模支撑结构 - Google Patents
曝光***、曝光方法和掩模支撑结构 Download PDFInfo
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- WO2014176822A1 WO2014176822A1 PCT/CN2013/078230 CN2013078230W WO2014176822A1 WO 2014176822 A1 WO2014176822 A1 WO 2014176822A1 CN 2013078230 W CN2013078230 W CN 2013078230W WO 2014176822 A1 WO2014176822 A1 WO 2014176822A1
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- WIPO (PCT)
- Prior art keywords
- mask
- exposure
- substrate
- support structure
- reticle
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
Definitions
- Exposure system Exposure system, exposure method and mask support structure
- the present invention relates to an exposure system, an exposure method, and a mask support structure. Background technique
- . 1 is a schematic view of the middle portion of the mask when the mask is horizontally placed.
- the support structure 5 supports the edge of the mask 1.
- the middle portion of the mask 1 is bent downward to generate a sag amount.
- the problem of solving the downward sag of the reticle to produce a sag amount is mainly as follows.
- FIG. 2 is a schematic view showing the increase of the surface negative pressure on the mask plate in the prior art.
- a vacuum device is disposed above the mask plate 1.
- the negative pressure device includes a negative pressure structure 2 and an adsorption hole 3, and the adsorption hole 3 Located above the two edges of the mask 1 , when the vacuum device is activated, the adsorption hole 3 is sucked into a portion of the air above the mask 1 to reduce the pressure above the mask 1 , and the air below the mask 1 is generated.
- An upward force reduces or eliminates the effect of the gravity of the reticle 1 on itself, thereby reducing or eliminating the degree of curvature and sag in the middle of the reticle 1.
- FIG. 3 is a schematic view showing the two edges of the reticle mask in the prior art.
- a pressing device 4 is disposed at both edges of the reticle 1, and the squeezing device 4 produces a slanting device 4 from the two edges to the middle direction.
- the force of the mask 1 is tilted up, thereby reducing the degree of bending and the amount of sag in the middle of the mask 1.
- an exposure system including: a support structure for supporting the mask and a base for setting a substrate, wherein the support structure supports the mask such that the mask The stencil is angled with respect to a horizontal plane and the pedestal supports the substrate such that the substrate is parallel to the reticle.
- an exposure method comprising: disposing the mask plate on a support structure such that the mask plate is disposed at an angle with respect to a horizontal plane to set a substrate on the base; The base is disposed in parallel with the mask; the substrate is exposed through the mask.
- a mask support structure including: a support frame on which a mask plate is disposed; and an inclination adjusting device for adjusting the support frame to Tilt the preset angle relative to the horizontal plane ⁇
- the irradiation direction of the light for exposure is perpendicular to the surface of the mask.
- Figure 1 is a schematic view of the middle portion of the mask placed horizontally
- FIG. 2 is a schematic view showing an increase in surface negative pressure on a mask plate in the prior art
- FIG. 3 is a schematic view showing two edges of a squeeze mask in the prior art
- FIG. 4 illustrates an arrangement of a support structure for supporting a reticle and a base for supporting a substrate in an exposure system according to an embodiment of the present invention
- Figure 5 is a schematic view showing the relationship between the inclination angle of the mask and the force.
- Figure 6 shows the relationship between the set angle S and the sag amount H.
- the exposure system includes: a support structure 5 for supporting the mask 1 and a base 6 for arranging the substrate 7.
- the support structure 5 supports the mask 1 such that the mask 1 is inclined at a predetermined angle with respect to the horizontal plane.
- the base 6 supports the substrate 7 such that the substrate 7 is parallel to the mask 1.
- the abutment 6 is at a set angle with the horizontal plane ⁇
- the mask plate 1 and the horizontal plane are set at a specific angle: the surface of the mask 1 is at a set angle with the horizontal plane.
- the base 6 is at a set angle with the horizontal plane. Specifically, the surface of the base 6 is horizontal and horizontal. Setting angle
- the setting angle ⁇ arccos (0 - 05 ) is the maximum amount of sag when the mask 1 is horizontally placed.
- the support structure supports the edge of the reticle and there is no sag when the reticle is placed horizontally.
- the mask is subjected to its own gravity, and a certain amount of sag is generated in a direction perpendicular to the surface thereof.
- the maximum sag amount is a dish, and the force of the reticle in a direction perpendicular to the surface thereof is G. Since the reticle is elastically changed, there is a modulus of elasticity in the direction perpendicular to the reticle and the modulus of elasticity is constant if the reticle is not broken.
- Fig. 5 schematically shows the inclination angle of the mask 1, i.e., the relationship between the angle ⁇ and the force of the mask 1.
- the ideal mask 10 has no sag in the direction perpendicular to its surface, but is still affected by gravity.
- H ⁇ 0.05 mm, arccosd / 5 ) ⁇ ⁇ ⁇ 9 0 ° can be calculated, that is, all The set angle that satisfies this condition can be.
- the mask is at a set angle to the horizontal plane such that the amount of sag of the mask is less than the maximum amount of sag, which greatly reduces the amount of sag of the mask, thereby overcoming the problem of sag of the mask.
- the mask is supported at a set angle to the horizontal plane, and the base is parallel to the mask to overcome the sagging problem of the mask.
- the mask plate, the substrate, and the base are tilted to reduce the probability of particles falling on the mask, the substrate, and the base during exposure.
- the irradiation direction of the light for exposure 8 is perpendicular to the mask 1.
- the irradiation direction of the exposure light line 8 is perpendicular to the mask 1, the light intensity transmitted through the mask is the largest.
- an exposure method comprising the following steps S201-S204:
- Step S201 disposing the mask on the support structure so that the mask is inclined with respect to the horizontal plane.
- the mask is placed on the support structure, the support structure is supported on the edge of the mask, and the support structure is adjusted such that the mask is disposed at a set angle S to the horizontal.
- Step S202 The substrate is placed on the base.
- the substrate is placed on the base and the substrate and the base are kept relatively fixed.
- Step S203 The base is arranged in parallel with the mask.
- the position of the base is adjusted such that the base is placed in parallel with the mask, and the substrate is also disposed in parallel with the mask.
- Step S204 Exposing the substrate through the mask.
- the substrate is exposed through the mask using light for exposure.
- the direction of illumination of the exposure light is perpendicular to the mask.
- the illumination direction of the exposure light is perpendicular to the mask, the light intensity transmitted through the mask is maximized.
- the set angle satisfies ⁇ arcc ° s ( ( ) 5 / U , where the leg is the maximum amount of sag when the reticle 1 is placed horizontally.
- the order of the foregoing steps S201, S202, S203, and S204 may be adjusted. For example, step S202 and step S203 may be performed first, then step S101 is performed, and finally step S204 is performed.
- the exposure method provided by this embodiment can be implemented by using the exposure system provided in the previous embodiment.
- the mask is at a set angle to the horizontal plane such that the amount of sag of the mask is less than the maximum amount of sag, which greatly reduces the amount of sag of the mask, thereby overcoming the problem of sag of the mask.
- the mask, the substrate, and the abutment obliquely, the probability of particles falling on the mask, the substrate, and the pedestal during exposure can be reduced.
- a mask supporting structure comprising: a support frame on which a mask plate is disposed; and an inclination adjusting device for adjusting the support frame, Tilt the preset angle relative to the horizontal plane
- the set angle ⁇ arca ⁇ Q5 / U wherein the dish is the maximum amount of sag when the reticle is placed horizontally.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
一种曝光***、曝光方法和掩模板支撑结构。曝光***包括:用于支撑掩模板(1)的支撑结构(5)和用于设置基板(7)的基台(6),其中,支撑结构(5)支撑掩模板(1),使得掩模板(1)相对于水平面倾斜设定角度θ,并且基台(6)支撑基板(7),使得基板(7)与掩模板(1)平行。这种结构可以有效地减小掩模板的下垂量。
Description
曝光***、 曝光方法和掩模支撑结构 技术领域
本发明涉及曝光***、 曝光方法和掩模支撑结构。 背景技术
目前, 对基板进行曝光工艺时, 基台、 掩模板、 基板会水平放置, 其中 掩模板水平放置于支撑结构上,支撑结构支撑掩模板的边缘, 由于重力影响, 掩模板中部会产生一个下垂量。图 1为掩模板水平放置时中部下垂的示意图, 如图 1所示, 支撑结构 5支撑掩模板 1的边缘, 在重力的作用下, 掩模板 1 的中部会向下弯曲产生一个下垂量,在进行曝光时, 由于掩模板 1中部弯曲, 则会导致曝光偏移。
在现有技术中, 解决掩模板中部向下弯曲产生下垂量的问题主要采取如 下方式。
图 2为现有技术中增加掩模板上表面负压的示意图, 如图 2所示, 在掩 模板 1的上方设置负压装置, 负压装置包括负压结构 2和吸附孔 3,吸附孔 3 位于掩模板 1的两边缘的上方, 当负压装置启动时, 吸附孔 3会吸入掩模板 1上方的部分空气, 使掩模板 1上方的压强减小, 此时掩模板 1下方的空气 会产生一个向上的力, 从而减小或消除了掩模板 1重力对自身的影响, 进而 减小或消除了掩模板 1中部弯曲程度和下垂量。
图 3为现有技术中挤压掩模板两边缘的示意图, 如图 3所示, 在掩模板 1的两边缘设置挤压装置 4,挤压装置 4对掩模板 1产生由两边缘至中部方向 的力, 从而使掩模板 1中部翘起, 进而减小了掩模板 1中部的弯曲程度和下 垂量。
采用增加掩模板上表面负压的方式, 需要在掩模板上方设置负压装置, 采用此方式会产生负压装置的成本, 减小了经济效益。 采用挤压掩模板两边 缘的方式, 需要在掩模板两边缘设置挤压装置, 采用此方式在挤压掩模板两 边缘过程中有可能损坏掩模板, 造成不必要的损坏。
发明内容
根据本发明实施例, 提供一种曝光***, 其包括: 用于支撑所述掩模板 的支撑结构和用于设置基板的基台, 其中, 所述支撑结构支撑所述掩模板, 使得所述掩模板相对于水平面倾斜设定角度 并且所述基台支撑所述基板, 使得基板与所述掩模板平行。
根据本发明实施例, 还提供一种曝光方法, 其包括: 将所述掩模板设置 于支撑结构上, 使得所述掩模板相对于水平面倾斜设定角度 将基板设置 于所述基台上; 将所述基台与所述掩模板平行设置; 通过所述掩模板对所述 基板进行曝光。
根据本发明实施例, 进一步提供一种掩模板支撑结构, 其包括: 供掩模 板安置于其上的支撑架; 和倾斜度调节装置, 该倾斜度调节装置用于调节所 述支撑架, 使之相对于水平面倾斜预设角度^
优选, 曝光用光线的照射方向与所述掩模板的表面垂直。
优选, 所述设定角度0≥ arCCOS(0-05 其中 为所述掩模板水平放 置时的最大下垂量。 附图说明
为了更清楚地说明本发明实施例的技术方案, 下面将对实施例的附图作 筒单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例, 而非对本发明的限制。
图 1为掩模板水平放置其中部下垂示意图;
图 2为现有技术中增加掩模板上表面负压示意图;
图 3为现有技术中挤压掩模板两边缘示意图;
图 4示出根据本发明实施例提供的曝光***中的用于支撑掩模板的支撑 结构和用于支撑基板的基台的布置;
图 5为掩模板的倾斜角度与受力之间关系的示意图; 以及
图 6为 时设定角度 S与下垂量 H的关系曲线。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚, 下面将结合本发
明实施例的附图,对本发明实施例的技术方案进行清楚、 完整地描述。显然, 所描述的实施例是本发明的一部分实施例, 而不是全部的实施例。 基于所描 述的本发明的实施例, 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例, 都属于本发明保护的范围。
根据本发明实施例提供一种曝光***。 如图 4所示, 该曝光***包括: 用于支撑掩模板 1的支撑结构 5和用于设置基板 7的基台 6。所述支撑结构 5 支撑掩模板 1 , 使得掩模板 1相对于水平面倾斜一预设角度 所述基台 6 支撑基板 7 , 使得基板 7与掩模板 1平行。
由于掩模板 1与水平面呈设定角度 且基台 6与掩模板 1平行, 则基 台 6与水平面呈设定角度^
本实施例中, 掩模板 1与水平面呈设定角度 具体为: 掩模板 1的表面 与水平面呈设定角度^基台 6与水平面呈设定角度 S具体为:基台 6的表面 与水平面呈设定角度
较优地, 设定角度 ≥ arccos(0-05 其中 皿为掩模板 1水平放置时 的最大下垂量。
在理想状态下, 支撑结构支撑掩模板边缘, 掩模板水平放置时没有下垂 量。 但实际中, 掩模板受到自身重力的作用, 会在垂直于其表面的方向上产 生一定量的下垂量, 最大下垂量为 ^皿 , 且掩模板在垂直于其表面的方向上 受到的力为 G。 由于掩模板处于弹性变化, 则会在垂直于掩模板方向会有一 个弹性模量 且在掩模板未断裂的情况下, 弹性模量 为定值。
图 5示意地示出掩模板 1的倾斜角度, 即角度^ 与掩模板 1的受力之 间的关系。 如图 5所示, 在当掩模板 1与水平面呈设定角度 后, 理想掩模 板 10在垂直于其表面的方向上没有产生下垂量,但是仍受重力影响的掩模板
1会在垂直于其表面的方向上产生下垂量 ( h < h^ ), 且掩模板 1在垂直于 其表面的方向上受到的力为 G cos 由于在掩模板 1未断裂的情况下, 弹性 模量 为定值, 因此可建立等式关系 = G 皿 = G c。s , 由此等式关系可 得出 ^ 皿 。 按照目前曝光的要求规格, 掩模板 1 的下垂量不大于 0.05mm , 贝 'J = 005 θ χ ίιΜΑχ≤ 0.05 , 因此即可推算出 ≥ arccos(0.05 / )且 0 < ^ < 90°。
综上所述, 满足 ≥arccos( 05/U且 0 < < 90。的设定角度^ 能使掩模
板 1符合曝光的要求规格。
图 6为 ^ = 25"^时设定角度 与下垂 ¾ 的关系曲线, 如图 6所示, 通过上述分析过程可知设定角度 与下垂量 的关系 式为 H = cos ^x ^ = 0.25 cos ^ , 当掩模板 1 水平放置时 ^ 0 , 下垂量 H = hMAX = 0.25mm ? 此时的下垂量最大。 当 H≤ 0.05mm时, 可以算出 arccosd / 5) < ^ < 90° ,即所有的满足此条件的设定角度 均可。
本实施例中掩模板与水平面呈设定角度 使得掩模板的下垂量小于最 大下垂量, 极大的减小了掩模板的下垂量, 从而克服了掩模板的下垂问题。
本实施例提供的一种曝光***中,将掩模板支撑为与水平面呈设定角度, 并且基台与掩模板平行, 克服了掩模板的下垂问题。 另外, 将掩模板、基板、 基台倾斜设置, 减小了曝光过程中微粒落到掩模板、 基板、 基台的机率。
此外, 较优地, 曝光用光线 8的照射方向与掩模板 1垂直。 当曝光用光 线 8的照射方向与掩模板 1垂直时, 透过掩模板的光照强度最大。
根据本发明实施例, 还提供一种曝光方法, 该曝光方法包括以下步骤 S201-S204:
步骤 S201: 将掩模板设置于支撑结构上, 使得掩模板相对于水平面倾斜 设定角度
例如, 将掩模板设置于支撑结构上, 支撑结构支撑于掩模板的边缘, 调 整支撑结构, 使得掩模板以与水平面呈设定角度 S设置。
步骤 S202: 将基板设置于基台上。
例如, 将基板设置于基台上, 且保证基板与基台保持相对固定。
步骤 S203: 将基台与掩模板平行设置。
例如, 基于掩模板的位置, 调整基台的位置, 使得基台与掩模板平行设 置, 此时基板也与掩模板平行设置。
步骤 S204: 通过掩模板对基板进行曝光。
利用曝光用光线通过掩模板对基板进行曝光。
较优地, 曝光用光线的照射方向与掩模板垂直。 当曝光用光线的照射方 向与掩模板垂直时, 透过掩模板的光照强度最大。
较优地, 设定角度 满足 ≥arcc°s( ()5 /U , 其中 腿为掩模板 1 水平 放置时的最大下垂量。
可选地, 在实际应用中, 可对上述步骤 S201、 步骤 S202、 步骤 S203、 步骤 S204的顺序进行调整。 例如, 可先执行步骤 S202和步骤 S203, 而后再 执行步骤 S101 , 最后执行步骤 S204。
本实施例提供的曝光方法可采用之前的实施例中提供的曝光***来实 现。
本实施例中掩模板与水平面呈设定角度 使得掩模板的下垂量小于最 大下垂量, 极大的减小了掩模板的下垂量, 从而克服了掩模板的下垂问题。
另外, 将掩模板、 基板、 基台倾斜设置, 可以减小曝光过程中微粒落到 掩模板、 基板、 基台的机率。
此外, 根据本发明实施例, 还提供一种掩模板支撑结构, 其包括: 供掩 模板安置于其上的支撑架; 和倾斜度调节装置, 该倾斜度调节装置用于调节 所述支撑架, 使之相对于水平面倾斜预设角度
如前所讨论的, 优选, 所述设定角度 ≥arca^ Q5 /U , 其中 皿为所 述掩模板水平放置时的最大下垂量。
以上实施例仅用以说明本发明实施例的技术方案, 而非对其限制; 尽管 参照前述实施例对本发明实施例进行了详细的说明, 本领域的普通技术人员 应当理解: 其依然可以对前述各实施例所记载的技术方案进行修改, 或者对 其中部分技术特征进行等同替换; 而这些修改或者替换, 并不使相应技术方 案的本质脱离本发明实施例各实施例技术方案的精神和范围。
Claims
1.一种曝光***, 包括: 用于支撑所述掩模板的支撑结构和用于设置基 板的基台, 其中, 所述支撑结构支撑所述掩模板, 使得所述掩模板相对于水 平面倾斜设定角度 并且所述基台支撑所述基板, 使得基板与所述掩模板 平行。
2.如权利要求 1所述的曝光***, 其中, 曝光用光线的照射方向与所述 掩模板的表面垂直。
3.如权利要求 1 或 2 所述的曝光***, 其中, 所述设定角度 ^≥ rccos(0.05/^) ? 其中 ¾M 为所述掩模板水平放置时的最大下垂量。
4.一种曝光方法, 包括:
将所述掩模板设置于支撑结构上, 使得所述掩模板相对于水平面倾斜设 定角度^
将基板设置于所述基台上;
将所述基台与所述掩模板平行设置;
通过所述掩模板对所述基板进行曝光。
5.如权利要求 4所述的曝光方法, 其中, 曝光用光线的照射方向与所述 掩模板的表面垂直。
6.如权利要求 4 或 5 所述的曝光方法, 其中, 所述设定角度 ^≥ rccos(0.05/^) ? 其中 ^皿为所述掩模板水平放置时的最大下垂量。
7.一种掩模板支撑结构, 包括: 供掩模板安置于其上的支撑架; 和倾斜 度调节装置, 该倾斜度调节装置用于调节所述支撑架, 使之相对于水平面倾 斜预设角度
8.如权利要求 7 所述的掩模板支撑结构, 其中, 所述设定角度 ^≥ rccos(0.05/^) ? 其中 ¾M 为所述掩模板水平放置时的最大下垂量。
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US5530516A (en) * | 1994-10-04 | 1996-06-25 | Tamarack Scientific Co., Inc. | Large-area projection exposure system |
JPH11352698A (ja) * | 1998-05-19 | 1999-12-24 | Orc Technol Inc | 基板を露光させるための装置及び方法 |
CN101364051A (zh) * | 2007-08-08 | 2009-02-11 | 恩益禧电子股份有限公司 | 曝光装置、曝光方法以及半导体器件的制造方法 |
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US7239376B2 (en) * | 2005-07-27 | 2007-07-03 | International Business Machines Corporation | Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices |
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US5530516A (en) * | 1994-10-04 | 1996-06-25 | Tamarack Scientific Co., Inc. | Large-area projection exposure system |
JPH11352698A (ja) * | 1998-05-19 | 1999-12-24 | Orc Technol Inc | 基板を露光させるための装置及び方法 |
CN101364051A (zh) * | 2007-08-08 | 2009-02-11 | 恩益禧电子股份有限公司 | 曝光装置、曝光方法以及半导体器件的制造方法 |
CN102629078A (zh) * | 2011-08-18 | 2012-08-08 | 京东方科技集团股份有限公司 | 曝光工艺及装置 |
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