TWI303536B - Apparatus for removing static charge from substrate and base thereof - Google Patents

Apparatus for removing static charge from substrate and base thereof Download PDF

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Publication number
TWI303536B
TWI303536B TW094147235A TW94147235A TWI303536B TW I303536 B TWI303536 B TW I303536B TW 094147235 A TW094147235 A TW 094147235A TW 94147235 A TW94147235 A TW 94147235A TW I303536 B TWI303536 B TW I303536B
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Taiwan
Prior art keywords
substrate
base
support columns
machine
disposed
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TW094147235A
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Chinese (zh)
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TW200726325A (en
Inventor
Chao Chin Hsu
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Au Optronics Corp
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Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW094147235A priority Critical patent/TWI303536B/en
Priority to KR1020060040286A priority patent/KR100737664B1/en
Priority to JP2006332742A priority patent/JP4804322B2/en
Publication of TW200726325A publication Critical patent/TW200726325A/en
Application granted granted Critical
Publication of TWI303536B publication Critical patent/TWI303536B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05FSTATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00Carrying-off electrostatic charges
    • H05F3/06Carrying-off electrostatic charges by means of ionising radiation

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  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Elimination Of Static Electricity (AREA)

Description

1303536 .九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種機台,特別係有關於一 _ 【先前技#f】 第la圖係顯示習知曝光機台1,其包括腔體2、夷 座6以及X光產生器4。基座6以及X光產生器$均执 籲於腔體2之中。玻璃基板3放置於基座6之上。當欲^ 除玻璃基板3表面上的靜電時,X光產生器4會璃 基板3射出X光5,以運用X光5消除靜電。然而,利 用X光照射的方式僅能去除玻璃基板3上表面的靜電/ 玻璃基板3下表面的靜電在經過上述步驟之後仍會繼續 存在,並與基座6表面產生靜電吸附。因此,如第lb ^ 所示’當基座6中的支撐結構(支撐柱)7上升而抵頂玻^ 基板3時,玻璃基板3下表面的靜電力會造成玻璃基板3 受力不均的情況,並使玻璃基板3容易發生彎曲 _ 的情形。 ^ 【發明内容】 為了解決上述習知技術之問題,本發明提供一種機 台,用以處理一基板,此種機台包括一基座、一支撐社 構以及一突出柱。支撐結構設置於該基座並支撐今夷 板。突出柱設置於該基座上,其中離子氣體選擇性地由 該支撐結構或該突出柱朝該基板喷出,或是該支撐結構 及該突出柱兩者同時朝該基板喷出,藉以去除該灵板上1303536. Nine, the invention relates to: [Technical field of the invention] The present invention relates to a machine, in particular to a prior art display system, which comprises a conventional exposure machine 1 including a cavity Body 2, seat 6 and X-ray generator 4. Both the susceptor 6 and the X-ray generator $ are in the cavity 2. The glass substrate 3 is placed on the susceptor 6. When it is desired to remove static electricity on the surface of the glass substrate 3, the X-ray generator 4 emits X-rays 5 from the glass substrate 3 to eliminate static electricity by using the X-rays 5. However, only the static electricity on the upper surface of the glass substrate 3/the static electricity on the lower surface of the glass substrate 3 can be removed by the X-ray irradiation, and the electrostatic deposition continues to occur on the surface of the susceptor 6 after the above steps. Therefore, as shown in the first lb ^, when the support structure (support column) 7 in the susceptor 6 rises and abuts against the top substrate 3, the electrostatic force on the lower surface of the glass substrate 3 causes the glass substrate 3 to be unevenly loaded. In this case, the glass substrate 3 is likely to be bent. SUMMARY OF THE INVENTION In order to solve the above problems of the prior art, the present invention provides a machine for processing a substrate including a base, a support structure, and a protruding column. A support structure is disposed on the base and supports the present plate. a protruding column is disposed on the base, wherein the ion gas is selectively ejected from the supporting structure or the protruding post toward the substrate, or both the supporting structure and the protruding post are simultaneously ejected toward the substrate, thereby removing the Spirit board

Client ?s Docket No.: AU0506086 TT’s Docket No: 0 632-A50573tw-f/Lemon 5 1303536 之靜電荷。 與基座之間it有效消除基板表面的靜電’降低基板 時的受力不均ίΓ及附力,進而防止支縣構推升基被 &象’避免基板發生破片的情形。 【實施方式】 第一實施例 第2a圖係一 座110。在此餘本發明之第一實施例的曝光機台的基 (支樓柱)ιη =例中,誠110上設有複數個支樓結構 排列的方式設晉硬數個開孔112。支撐結構111以矩陣 位置)以及第二並可以於第一位置(如第2a圖所顯示的 第3a圖所示了 ΐ置(第2b圖所顯示的位置)之間移動。如 基板3安置於等支撐結構111位料第二位置時, 如第3b圖所干μ基座U〇之上。待基板3經過曝光之後, 基板3升起。擇結構111上升至該第一位置,以將 其成1 ίο η n ’、、、第3c圖’曝光機台100包括腔體12〇、 Γ20之中。離子離子氣體產生器U4。基座110設於腔體 no中設有管:體產生器114設於基座11〇之中。基座 114即位於該管敗連通該等開孔112,離子氣體產生器 時,基板3置放t 13之中。當欲消除基板3表面的靜電 子氣體產生哭H該基座110之上。離子氣體115由離 :114產生,並通過管路113,接觸基板3 的下表面’藉以消除基板3下表面的靜電。 參照第3d圖,曝光機台1〇〇可另包括χ光產生器 130 ’設於该腔體120之中。離子氣體Π5可搭配X光產 生器130所產生的X光131,同時消除基板3之上表面Client ?s Docket No.: AU0506086 TT’s Docket No: 0 632-A50573tw-f/Lemon 5 1303536 Static charge. Between the pedestal and the susceptor, the static electricity on the surface of the substrate is effectively eliminated. The uneven force and the adhesion force when the substrate is lowered are prevented, and the erecting of the substrate is prevented from being smashed by the substrate. [Embodiment] First Embodiment Fig. 2a is a block 110. In the example of the base (support column) of the exposure machine of the first embodiment of the present invention, the plurality of branch structures are arranged in the manner of a plurality of branch structures. The support structure 111 is moved between the matrix position and the second position and can be moved between the first position (as shown in Fig. 3a shown in Fig. 2a) (the position shown in Fig. 2b). When the support structure 111 is in the second position of the material, as in the dry pedestal U 所 on the 3b, after the substrate 3 is exposed, the substrate 3 is raised. The structure 111 is raised to the first position to 1 ίο η n ',, 3c' exposure machine 100 includes a cavity 12 〇, Γ 20. Ion ion gas generator U4. The susceptor 110 is provided in the cavity no with a tube: body generator The substrate 114 is disposed in the pedestal 11 。. The susceptor 114 is located when the tube is connected to the openings 112 and the ion gas generator, and the substrate 3 is placed in the t 13 . When the electrostatic sub-gas on the surface of the substrate 3 is to be eliminated A crying H is generated on the susceptor 110. The ionic gas 115 is generated from: 114 and passes through the line 113 to contact the lower surface of the substrate 3 to eliminate static electricity on the lower surface of the substrate 3. Referring to Figure 3d, the exposure machine 1 The χ gas generator 130' may be further disposed in the cavity 120. The ion gas Π5 may be combined with X-ray generation. 131130 X-ray generated, while eliminating the surface on the substrate 3

Clienfs Docket No.: AU0506086 TT’s Docket No: 0632-A50573tw-f/Lemon 1303536 . 及下表面的靜電。 運用本發明可有效消除基板表面的靜電,降低基板 與基座之間的靜電吸附力,進而防止支撐結構推升i板 時的受力不均現象,避免基板發生破片的情形。" • 第'一貫施例 ^ 4a圖係顯示本發明第二實施例的曝光機台丨⑼,。 在此實施例中,曝光機台100,另包括複數個突出柱(噴 嘴)116,設於基座110的上表面。當吹送離子氣體115 時,離子氣體115可從該等突出柱116喷出,而從基板3 的上方接觸基板3的上表面,藉此消除基板3上表面的 靜電。在本發明的第二實施例中,毋須使用X光產生器 所產生的X光來消除基板上表面的靜電。 參照第4b圖,當基板3安置於基座11〇之上時,突 出柱116可設於基板3之外圍而環鐃基板3,以均勻充分 地對基板3提供離子氣體。 在上述第一及第二實施例中,開孔112另可連通一 # 真空管路(未繪示),用以當對基板3進行曝光時,以真空 作用吸附基板3,進而加強基板3於曝光時的穩定度。此 外,在完成曝光製程之後,曝光機台可先對該等開孔112 供應乾燥氣體,以破除真空,而後再對該等開孔丨12供 應離子氣體,以消除基板3下表面的靜電。 第三實施例 第5圖係顯示本發明之第三實施例的曝光機台200。 在此實施例中,支撐結構111的中央設有通氣口 117,通Clienfs Docket No.: AU0506086 TT’s Docket No: 0632-A50573tw-f/Lemon 1303536 . And static electricity on the lower surface. By using the invention, the static electricity on the surface of the substrate can be effectively eliminated, the electrostatic adsorption force between the substrate and the susceptor can be reduced, and the uneven force of the support structure when the i-plate is pushed up can be prevented, and the fragmentation of the substrate can be avoided. " • The 'consistent application' Fig. 4a shows the exposure machine (9) of the second embodiment of the present invention. In this embodiment, the exposure machine 100 further includes a plurality of protruding posts (nozzles) 116 disposed on the upper surface of the base 110. When the ion gas 115 is blown, the ion gas 115 can be ejected from the protruding columns 116, and the upper surface of the substrate 3 is contacted from above the substrate 3, thereby eliminating static electricity on the upper surface of the substrate 3. In the second embodiment of the present invention, it is not necessary to use X-rays generated by the X-ray generator to eliminate static electricity on the upper surface of the substrate. Referring to Fig. 4b, when the substrate 3 is placed on the susceptor 11A, the projecting post 116 may be provided on the periphery of the substrate 3 to surround the substrate 3 to uniformly and sufficiently supply the ionic gas to the substrate 3. In the first and second embodiments, the opening 112 is further connected to a vacuum line (not shown) for adsorbing the substrate 3 by vacuum when the substrate 3 is exposed, thereby reinforcing the substrate 3 for exposure. Time stability. Further, after the exposure process is completed, the exposure machine may first supply dry gas to the openings 112 to break the vacuum, and then supply the ion gas to the openings 12 to eliminate static electricity on the lower surface of the substrate 3. Third Embodiment Fig. 5 is a view showing an exposure machine 200 of a third embodiment of the present invention. In this embodiment, the center of the support structure 111 is provided with a vent 117, which is

Client’s Docket No.: AU05 060 8 6 7 TT’s Docket No: 0 632 -A5 0 5 7 31w-f /Lemon 1303536 氣口 117連通管路113。當欲消除基板3下表面的靜電荷 時,離子氣體產生器Π4會產生離子氣體115,並經過管 路113以及該等通氣口 117而接觸基板3的下表面。 第三實施例的曝光機台200可搭配第一實施例中的 複數個開孔,以增加離子氣體與基板下表面的接觸面 積,增進基板下表面的靜電荷消除效果。或者,第三實 施例的曝光機台200亦可搭配第一實施例中的X光產生 器,以消除基板上表面的靜電荷。 第三實施例的曝光機台200亦可搭配第二實施例中 的複數個突出柱,從該基板的上方對該基板的上表面提 供離子氣體,以消除基板上表面的靜電荷。 同樣地,通氣口 117另可連通一真空管路(未繪示), 用以當基板3進行曝光時,以真空作用吸附基板3,進而 加強基板3於曝光時的穩定度。在完成曝光製程之後, 曝光機台可先對該等通氣口 117供應乾燥氣體,以破除 真空,而後再對該等通氣口 117供應離子氣體,以消除 基板3下表面的靜電。 雖然本發明已以較佳實施例揭露如上,然其並非用 以限定本發明;任何熟習此項技藝者,在不脫離本發明 之精神和範圍内,仍可作些許的更動與潤飾。因此,本 發明之保護範圍當視後附之申請專利範圍所界定者為 準。Client’s Docket No.: AU05 060 8 6 7 TT’s Docket No: 0 632 -A5 0 5 7 31w-f /Lemon 1303536 Air port 117 is connected to line 113. When the electrostatic charge on the lower surface of the substrate 3 is to be eliminated, the ion gas generator Π4 generates the ion gas 115 and contacts the lower surface of the substrate 3 through the pipe 113 and the vents 117. The exposure machine 200 of the third embodiment can be combined with a plurality of openings in the first embodiment to increase the contact area of the ion gas with the lower surface of the substrate and to enhance the static charge eliminating effect on the lower surface of the substrate. Alternatively, the exposure machine 200 of the third embodiment may be combined with the X-ray generator of the first embodiment to eliminate the static charge on the upper surface of the substrate. The exposure stage 200 of the third embodiment can also be combined with a plurality of protruding columns in the second embodiment to supply an ion gas to the upper surface of the substrate from above the substrate to eliminate the static charge on the upper surface of the substrate. Similarly, the vent 117 can be connected to a vacuum line (not shown) for adsorbing the substrate 3 by vacuum when the substrate 3 is exposed, thereby enhancing the stability of the substrate 3 during exposure. After the exposure process is completed, the exposure machine may first supply dry gas to the vents 117 to break the vacuum, and then supply the ionic gas to the vents 117 to eliminate static electricity on the lower surface of the substrate 3. While the invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Clienfs Docket No.: AU0506086 TT5s Docket No: 0632-A5057 3tw-f/Lemon 8 1303536 . 【圖式簡單說明】 第la圖係顯示習知曝光機台。 第lb圖係顯示在習知技術中,支撐結構底頂玻璃基 板的情形。 第2a圖係顯示本發明第一實施例的曝光機台的基 座。 - 第2b圖係顯示本發明第一實施例中,支撐結構位於 第二位置的情形。 第3a圖係顯示基板置放於基座之上的情形。 第3b圖係顯示支撐結構升起基板的情形。 • 第3c圖係顯示本發明第一實施例之曝光機台的主要 結構。 第3d圖係顯示本發明第一實施例之曝光機台具有X 光產生器的情形。 第4a圖係顯示本發明第二實施例的曝光機台。 第4b圖係顯示本發明第二實施例中,突出柱環繞基 板的情形。 第5圖係顯示本發明第三實施例的曝光機台。 【主要元件符號說明】 1〜曝光機台; 3〜基板; 5〜X光; 7〜支撐結構; 110〜基座; 112〜開孔; 2〜腔體; 4〜X光產生器; 6〜基座; 100、100’、200〜曝先機台; 111〜支撐結構; 113〜管路; 114〜離子氣體產生器;115〜離子氣體; 116〜突出柱; 117〜通氣口; 120〜腔體; 130〜X光產生器; 131〜X光。Clienfs Docket No.: AU0506086 TT5s Docket No: 0632-A5057 3tw-f/Lemon 8 1303536 . [Simplified Schematic] The first drawing shows a conventional exposure machine. Figure lb shows the state of the underlying glass substrate supporting the structure in the prior art. Fig. 2a is a view showing the base of the exposure machine of the first embodiment of the present invention. - Fig. 2b shows the case where the support structure is in the second position in the first embodiment of the invention. Figure 3a shows the placement of the substrate on the pedestal. Figure 3b shows the situation in which the support structure raises the substrate. • Fig. 3c shows the main structure of the exposure machine of the first embodiment of the present invention. Fig. 3d shows a case where the exposure machine of the first embodiment of the present invention has an X-ray generator. Fig. 4a is a view showing the exposure machine of the second embodiment of the present invention. Fig. 4b is a view showing a state in which the projecting column surrounds the substrate in the second embodiment of the present invention. Fig. 5 is a view showing an exposure machine of a third embodiment of the present invention. [Main component symbol description] 1 ~ exposure machine; 3 ~ substrate; 5 ~ X light; 7 ~ support structure; 110 ~ pedestal; 112 ~ opening; 2 ~ cavity; 4 ~ X light generator; Base; 100, 100', 200~ exposure machine; 111~ support structure; 113~ pipeline; 114~ ion gas generator; 115~ ion gas; 116~ protruding column; 117~ vent; 120~ cavity Body; 130~X light generator; 131~X light.

Client’s Docket No.: AU050 60 8 6 TT5s Docket No: 0 632-A5057 3tw-f/LemonClient’s Docket No.: AU050 60 8 6 TT5s Docket No: 0 632-A5057 3tw-f/Lemon

Claims (1)

曰期:97年8月25曰 9革8月21修正替換頁j 1303536 -第94147235號申請專利範圍修正本 十、申請專利範圍: 1.一種機台,用以處理一基板,談機台包括: 一基座; 複數個支撐柱,設置於該基座,用以支撐該基板; 複數個突出柱,設置於該基座之外圍且環繞該基板; 以及 一離子氣體產生器,連接至該基座,並與該等支撐柱 及該等突出柱連通,其中離子氣體選擇性地由該等支撐柱 朝該基板喷出,或該等支撐柱及該等突出柱兩者同時朝該 # 基板喷出,藉以去除該基板表面上之靜電荷。 2. 如申請專利範圍第1項所述之機台,其中該等支撐 柱設有一通氣口,以供應乾燥氣體。 3. 如申請專利範圍第1項所述之機台,其中該等支撐 柱抵接該基板,該至少一突出柱與該基板之間相距一既 定距離。 4. 如申請專利範圍第1項所述之機台,其中該基座大 體呈矩形,且該等支撐柱設置於該基座之角落。 φ 5.如申請專利範圍第1項所述之機台,其中該等支撐 柱排列於該基座上,且該至少一突出柱突出於該基座表 面並設置於該基板之周圍。 6. 如申請專利範圍第1項所述之機台,其中該突出柱 係為一喷嘴。 7. —種基座,用以支樓一基板’該基座包括: 複數個支撐柱;以及 AU0506086/0632-A50573TW 10 130^^35 號申請專利範圍修正本 於年&虏%修正替換頁曰期:97年8月25曰 . 一離子氣體產生器,連接至該等支撐柱,其中離子氣 體由該等支撐柱朝該基板喷出,藉以去除該基板表面上之 靜電荷。 8. 如申請專利範圍第7項所述之基座,其中該等支撐 柱設有一通氣口,以供應乾燥氣體。 9. 如申請專利範圍第7項所述之基座,其另包括至少 一突出柱,朝該基板喷出離子氣體,藉以去除該基板上 之靜電荷。 10. 如申請專利範圍第9項所述之基座,其中該等支 # 撐柱抵接該基板,該至少一突出柱與該基板之間相距一 既定距離。 11 · 一種機台,用以處理一基板,該機台包括·· 一腔體; 一基座,設於該腔體之中,該基座包括複數個開孔以 及一管路,該等開孔設於該基座表面,該管路設於該基座 之中,該管路連通該等開孔; 複數個支撐柱,設置於該基座之上,用以支撐該基 Φ 板,且該管路連通該等支撐柱;以及 一離子氣體產生器,設於該管路之中,並產生一離子 氣體,其中該離子氣體經過該管路由該等支撐柱以及該等 開孔而朝該基板喷出,藉以去除該基板表面上之靜電荷。 12. 如申請專利範圍第11項所述之機台,其中該離子 氣體經過該管路以及該等開孔而朝該基板的下表面喷 出,藉以去除位於該基板下表面之靜電荷。 13. 如申請專利範圍第11項所述之機台,其更包括一 X光產生器,設於該腔體之中,該X光產生器朝該基板 AU0506086/0632-A50573TW 11 年邊正替換頁日期:97年8月25日 13 03 J#47235號申請專利範圍修正本 . 的上表面提供X光,藉以去除位於該基板上表面之靜電 荷。曰期:August 25th, 1997, August, August, August 21, Amendment, Replacement page, j 1303536 - No. 94147235, the scope of application for patent modification, the scope of application: 1. A machine for processing a substrate, the machine includes a susceptor; a plurality of support columns disposed on the pedestal for supporting the substrate; a plurality of protruding posts disposed on the periphery of the pedestal and surrounding the substrate; and an ion gas generator coupled to the base And communicating with the support columns and the protruding columns, wherein the ion gas is selectively ejected from the support columns toward the substrate, or both the support columns and the protruding posts are simultaneously sprayed toward the # substrate Out, to remove the static charge on the surface of the substrate. 2. The machine of claim 1, wherein the support columns are provided with a vent to supply dry gas. 3. The machine of claim 1, wherein the support posts abut the substrate, and the at least one protruding post is spaced apart from the substrate by a predetermined distance. 4. The machine of claim 1, wherein the base is substantially rectangular and the support posts are disposed at a corner of the base. 5. The machine of claim 1, wherein the support columns are arranged on the base, and the at least one protruding post protrudes from the surface of the base and is disposed around the substrate. 6. The machine of claim 1, wherein the protruding column is a nozzle. 7. A pedestal for supporting a base plate' the base includes: a plurality of support columns; and an AU0506086/0632-A50573TW 10 130^^35 patent application scope revision in the year &曰期: August 25, 1997. An ion gas generator is connected to the support columns, wherein ionic gas is ejected from the support columns toward the substrate, thereby removing static charges on the surface of the substrate. 8. The susceptor of claim 7, wherein the support columns are provided with a vent to supply dry gas. 9. The susceptor of claim 7, further comprising at least one protruding post that ejects ionic gas toward the substrate to remove static charge on the substrate. 10. The susceptor of claim 9, wherein the struts abut the substrate, and the at least one protruding post is spaced apart from the substrate by a predetermined distance. 11 . A machine for processing a substrate, the machine comprising: a cavity; a base disposed in the cavity, the base comprising a plurality of openings and a pipeline, the opening a hole is disposed on the surface of the base, the pipeline is disposed in the base, the pipeline is connected to the openings; a plurality of support columns are disposed on the base for supporting the base Φ plate, and The pipeline is connected to the support columns; and an ion gas generator is disposed in the pipeline and generates an ion gas, wherein the ion gas passes through the tube to route the support columns and the openings toward the The substrate is ejected to remove static charges on the surface of the substrate. 12. The machine of claim 11, wherein the ionic gas is ejected toward the lower surface of the substrate through the conduit and the openings to remove static charge on the lower surface of the substrate. 13. The machine of claim 11, further comprising an X-ray generator disposed in the cavity, the X-ray generator being replaced toward the substrate AU0506086/0632-A50573TW 11 years Page Date: August 25, 1997, 13 03 J#47235, the upper surface of the patent application scope provides X-rays to remove static charges on the upper surface of the substrate. 12 AU0506086/0632-A50573TW12 AU0506086/0632-A50573TW
TW094147235A 2005-12-29 2005-12-29 Apparatus for removing static charge from substrate and base thereof TWI303536B (en)

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KR1020060040286A KR100737664B1 (en) 2005-12-29 2006-05-04 Apparatus for processing substrate and base thereof
JP2006332742A JP4804322B2 (en) 2005-12-29 2006-12-11 Equipment for processing substrates and its base

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KR101735993B1 (en) * 2016-01-12 2017-05-15 주식회사 야스 Chucking method and system for substrte by charging
WO2020191715A1 (en) * 2019-03-28 2020-10-01 Esd Technology Consulting & Licensing Co., Ltd. Device and method for mitigating static charges
CN116489856A (en) * 2023-03-28 2023-07-25 菲迪斯智能装备(广东)有限公司 Air-float ion layering method for prepreg
KR102684289B1 (en) * 2023-06-26 2024-07-11 주식회사 에이치비테크놀러지 Substrate Support Apparatus with Incresed Static Electricity Elimination Range

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JPH06123924A (en) * 1992-10-12 1994-05-06 Nikon Corp Substrate holder
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JPH0927540A (en) * 1995-07-10 1997-01-28 Nikon Corp Substrate-retaining device
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