WO2014176822A1 - Système d'exposition, procédé d'exposition et structure de support de masque - Google Patents

Système d'exposition, procédé d'exposition et structure de support de masque Download PDF

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Publication number
WO2014176822A1
WO2014176822A1 PCT/CN2013/078230 CN2013078230W WO2014176822A1 WO 2014176822 A1 WO2014176822 A1 WO 2014176822A1 CN 2013078230 W CN2013078230 W CN 2013078230W WO 2014176822 A1 WO2014176822 A1 WO 2014176822A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
exposure
substrate
support structure
reticle
Prior art date
Application number
PCT/CN2013/078230
Other languages
English (en)
Chinese (zh)
Inventor
张继凯
吴洪江
黎敏
万冀豫
杨同华
查长军
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2014176822A1 publication Critical patent/WO2014176822A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Definitions

  • Exposure system Exposure system, exposure method and mask support structure
  • the present invention relates to an exposure system, an exposure method, and a mask support structure. Background technique
  • . 1 is a schematic view of the middle portion of the mask when the mask is horizontally placed.
  • the support structure 5 supports the edge of the mask 1.
  • the middle portion of the mask 1 is bent downward to generate a sag amount.
  • the problem of solving the downward sag of the reticle to produce a sag amount is mainly as follows.
  • FIG. 2 is a schematic view showing the increase of the surface negative pressure on the mask plate in the prior art.
  • a vacuum device is disposed above the mask plate 1.
  • the negative pressure device includes a negative pressure structure 2 and an adsorption hole 3, and the adsorption hole 3 Located above the two edges of the mask 1 , when the vacuum device is activated, the adsorption hole 3 is sucked into a portion of the air above the mask 1 to reduce the pressure above the mask 1 , and the air below the mask 1 is generated.
  • An upward force reduces or eliminates the effect of the gravity of the reticle 1 on itself, thereby reducing or eliminating the degree of curvature and sag in the middle of the reticle 1.
  • FIG. 3 is a schematic view showing the two edges of the reticle mask in the prior art.
  • a pressing device 4 is disposed at both edges of the reticle 1, and the squeezing device 4 produces a slanting device 4 from the two edges to the middle direction.
  • the force of the mask 1 is tilted up, thereby reducing the degree of bending and the amount of sag in the middle of the mask 1.
  • an exposure system including: a support structure for supporting the mask and a base for setting a substrate, wherein the support structure supports the mask such that the mask The stencil is angled with respect to a horizontal plane and the pedestal supports the substrate such that the substrate is parallel to the reticle.
  • an exposure method comprising: disposing the mask plate on a support structure such that the mask plate is disposed at an angle with respect to a horizontal plane to set a substrate on the base; The base is disposed in parallel with the mask; the substrate is exposed through the mask.
  • a mask support structure including: a support frame on which a mask plate is disposed; and an inclination adjusting device for adjusting the support frame to Tilt the preset angle relative to the horizontal plane ⁇
  • the irradiation direction of the light for exposure is perpendicular to the surface of the mask.
  • Figure 1 is a schematic view of the middle portion of the mask placed horizontally
  • FIG. 2 is a schematic view showing an increase in surface negative pressure on a mask plate in the prior art
  • FIG. 3 is a schematic view showing two edges of a squeeze mask in the prior art
  • FIG. 4 illustrates an arrangement of a support structure for supporting a reticle and a base for supporting a substrate in an exposure system according to an embodiment of the present invention
  • Figure 5 is a schematic view showing the relationship between the inclination angle of the mask and the force.
  • Figure 6 shows the relationship between the set angle S and the sag amount H.
  • the exposure system includes: a support structure 5 for supporting the mask 1 and a base 6 for arranging the substrate 7.
  • the support structure 5 supports the mask 1 such that the mask 1 is inclined at a predetermined angle with respect to the horizontal plane.
  • the base 6 supports the substrate 7 such that the substrate 7 is parallel to the mask 1.
  • the abutment 6 is at a set angle with the horizontal plane ⁇
  • the mask plate 1 and the horizontal plane are set at a specific angle: the surface of the mask 1 is at a set angle with the horizontal plane.
  • the base 6 is at a set angle with the horizontal plane. Specifically, the surface of the base 6 is horizontal and horizontal. Setting angle
  • the setting angle ⁇ arccos (0 - 05 ) is the maximum amount of sag when the mask 1 is horizontally placed.
  • the support structure supports the edge of the reticle and there is no sag when the reticle is placed horizontally.
  • the mask is subjected to its own gravity, and a certain amount of sag is generated in a direction perpendicular to the surface thereof.
  • the maximum sag amount is a dish, and the force of the reticle in a direction perpendicular to the surface thereof is G. Since the reticle is elastically changed, there is a modulus of elasticity in the direction perpendicular to the reticle and the modulus of elasticity is constant if the reticle is not broken.
  • Fig. 5 schematically shows the inclination angle of the mask 1, i.e., the relationship between the angle ⁇ and the force of the mask 1.
  • the ideal mask 10 has no sag in the direction perpendicular to its surface, but is still affected by gravity.
  • H ⁇ 0.05 mm, arccosd / 5 ) ⁇ ⁇ ⁇ 9 0 ° can be calculated, that is, all The set angle that satisfies this condition can be.
  • the mask is at a set angle to the horizontal plane such that the amount of sag of the mask is less than the maximum amount of sag, which greatly reduces the amount of sag of the mask, thereby overcoming the problem of sag of the mask.
  • the mask is supported at a set angle to the horizontal plane, and the base is parallel to the mask to overcome the sagging problem of the mask.
  • the mask plate, the substrate, and the base are tilted to reduce the probability of particles falling on the mask, the substrate, and the base during exposure.
  • the irradiation direction of the light for exposure 8 is perpendicular to the mask 1.
  • the irradiation direction of the exposure light line 8 is perpendicular to the mask 1, the light intensity transmitted through the mask is the largest.
  • an exposure method comprising the following steps S201-S204:
  • Step S201 disposing the mask on the support structure so that the mask is inclined with respect to the horizontal plane.
  • the mask is placed on the support structure, the support structure is supported on the edge of the mask, and the support structure is adjusted such that the mask is disposed at a set angle S to the horizontal.
  • Step S202 The substrate is placed on the base.
  • the substrate is placed on the base and the substrate and the base are kept relatively fixed.
  • Step S203 The base is arranged in parallel with the mask.
  • the position of the base is adjusted such that the base is placed in parallel with the mask, and the substrate is also disposed in parallel with the mask.
  • Step S204 Exposing the substrate through the mask.
  • the substrate is exposed through the mask using light for exposure.
  • the direction of illumination of the exposure light is perpendicular to the mask.
  • the illumination direction of the exposure light is perpendicular to the mask, the light intensity transmitted through the mask is maximized.
  • the set angle satisfies ⁇ arcc ° s ( ( ) 5 / U , where the leg is the maximum amount of sag when the reticle 1 is placed horizontally.
  • the order of the foregoing steps S201, S202, S203, and S204 may be adjusted. For example, step S202 and step S203 may be performed first, then step S101 is performed, and finally step S204 is performed.
  • the exposure method provided by this embodiment can be implemented by using the exposure system provided in the previous embodiment.
  • the mask is at a set angle to the horizontal plane such that the amount of sag of the mask is less than the maximum amount of sag, which greatly reduces the amount of sag of the mask, thereby overcoming the problem of sag of the mask.
  • the mask, the substrate, and the abutment obliquely, the probability of particles falling on the mask, the substrate, and the pedestal during exposure can be reduced.
  • a mask supporting structure comprising: a support frame on which a mask plate is disposed; and an inclination adjusting device for adjusting the support frame, Tilt the preset angle relative to the horizontal plane
  • the set angle ⁇ arca ⁇ Q5 / U wherein the dish is the maximum amount of sag when the reticle is placed horizontally.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

L'invention porte sur un système d'exposition, un procédé d'exposition et une structure de support de plaque de masque. Le système d'exposition comprend : une structure de support (5) utilisée pour porter une plaque de masque (1), et un étage de base (6) utilisé pour agencer un substrat (7), la structure de support (5) supportant la plaque de masque (1), permettant à la plaque de masque (1) d'être réglée de manière oblique à un angle de θ par rapport à un plan horizontal, et l'étage de base (6) supportant le substrat (7), permettant au substrat (7) d'être parallèle à la plaque de masque (1). Cette structure peut réduire efficacement la quantité d'affaissement de la plaque de masque.
PCT/CN2013/078230 2013-04-28 2013-06-27 Système d'exposition, procédé d'exposition et structure de support de masque WO2014176822A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310156077.3 2013-04-28
CN201310156077.3A CN103268057B (zh) 2013-04-28 2013-04-28 掩模***、掩模方法、曝光***和曝光方法

Publications (1)

Publication Number Publication Date
WO2014176822A1 true WO2014176822A1 (fr) 2014-11-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/078230 WO2014176822A1 (fr) 2013-04-28 2013-06-27 Système d'exposition, procédé d'exposition et structure de support de masque

Country Status (2)

Country Link
CN (1) CN103268057B (fr)
WO (1) WO2014176822A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303154B2 (ja) * 2014-07-08 2018-04-04 株式会社ブイ・テクノロジー 成膜マスク、その製造方法及びタッチパネル

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5530516A (en) * 1994-10-04 1996-06-25 Tamarack Scientific Co., Inc. Large-area projection exposure system
JPH11352698A (ja) * 1998-05-19 1999-12-24 Orc Technol Inc 基板を露光させるための装置及び方法
CN101364051A (zh) * 2007-08-08 2009-02-11 恩益禧电子股份有限公司 曝光装置、曝光方法以及半导体器件的制造方法
CN102629078A (zh) * 2011-08-18 2012-08-08 京东方科技集团股份有限公司 曝光工艺及装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07219212A (ja) * 1994-02-01 1995-08-18 Orc Mfg Co Ltd フォトマスクの撓み矯正装置およびその方法
TW504605B (en) * 1999-12-03 2002-10-01 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the same, the device and mask
JP3652329B2 (ja) * 2002-06-28 2005-05-25 キヤノン株式会社 走査露光装置、走査露光方法、デバイス製造方法およびデバイス
US7239376B2 (en) * 2005-07-27 2007-07-03 International Business Machines Corporation Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices
CN1828423A (zh) * 2005-08-30 2006-09-06 上海海晶电子有限公司 一种曝光掩模板的固定方法
JP4692276B2 (ja) * 2005-12-28 2011-06-01 ウシオ電機株式会社 支持機構及び支持機構を使ったマスクステージ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5530516A (en) * 1994-10-04 1996-06-25 Tamarack Scientific Co., Inc. Large-area projection exposure system
JPH11352698A (ja) * 1998-05-19 1999-12-24 Orc Technol Inc 基板を露光させるための装置及び方法
CN101364051A (zh) * 2007-08-08 2009-02-11 恩益禧电子股份有限公司 曝光装置、曝光方法以及半导体器件的制造方法
CN102629078A (zh) * 2011-08-18 2012-08-08 京东方科技集团股份有限公司 曝光工艺及装置

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CN103268057B (zh) 2014-12-17
CN103268057A (zh) 2013-08-28

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