WO2013054702A1 - レジスト下層膜形成用組成物、その製造方法、パターン形成方法及びレジスト下層膜 - Google Patents
レジスト下層膜形成用組成物、その製造方法、パターン形成方法及びレジスト下層膜 Download PDFInfo
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- WO2013054702A1 WO2013054702A1 PCT/JP2012/075568 JP2012075568W WO2013054702A1 WO 2013054702 A1 WO2013054702 A1 WO 2013054702A1 JP 2012075568 W JP2012075568 W JP 2012075568W WO 2013054702 A1 WO2013054702 A1 WO 2013054702A1
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- underlayer film
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Definitions
- the present invention relates to a composition for forming a resist underlayer film, a manufacturing method thereof, a pattern forming method, and a resist underlayer film.
- a resist underlayer film forming composition is applied on a substrate to be processed, then the resist composition is further applied, and then the mask pattern is transferred by exposure and developed with a developer to form the resist pattern. obtain. Subsequently, this resist pattern is transferred to the resist underlayer film by dry etching, and finally the pattern of the resist underlayer film is transferred to the substrate to be processed by dry etching, whereby a substrate having a desired pattern is obtained.
- the substrate to be processed may be deeply etched depending on the use of the semiconductor.
- the semiconductor device is for 3D or the like, it is necessary to etch the substrate to be processed deeply to about 1 ⁇ m.
- a relatively thick film thickness of about 7 ⁇ m is required.
- the conventional pattern formation method using the resist underlayer film forming composition cannot satisfy sufficient etching resistance, and an inorganic film, for example, is formed on the resist underlayer film. In some cases, cracks are generated in the resist underlayer film. Further, the formation of the resist underlayer film causes warpage of the substrate to be processed, and there is a disadvantage that the pattern size is shifted at the time of mask pattern transfer by exposure.
- a resist underlayer capable of forming a resist underlayer film that suppresses deformation of the substrate to be processed and has excellent etching resistance and crack resistance, and can transfer a pattern having a deep processing depth in the dry etching process of the substrate to be processed.
- a film forming composition and a pattern forming method are desired.
- the present invention has been made based on the above circumstances, and its purpose is to suppress warpage of the substrate to be processed, and to form a resist underlayer film excellent in etching resistance and crack resistance.
- An object of the present invention is to provide a resist underlayer film forming composition and a pattern forming method suitable for transferring a pattern having a deep processing depth in an etching process.
- a resist underlayer film forming composition containing a polymer having a Tg of 0 ° C. or higher and 180 ° C. or lower (hereinafter also referred to as “[A1] polymer”).
- the glass transition temperature (Tg) of the [A1] polymer contained in the composition for forming a resist underlayer film of the present invention is 0 ° C. or more and 180 ° C. or less, and the residual stress of the resist underlayer film after heating is characterized by Can be small.
- Tg glass transition temperature
- the resist underlayer film formed from the resist underlayer film forming composition suppresses warpage of the substrate to be processed and is excellent in etching resistance and crack resistance even when the film thickness is relatively thick.
- a resist underlayer film can be formed.
- the resist underlayer film forming composition can transfer a pattern with a deep processing depth while suppressing the generation of cracks even in a dry etching process of a substrate to be processed including a step of forming an inorganic film on the resist underlayer film. It becomes possible.
- the multilayer resist process usually forms a resist underlayer film on a substrate to be processed, forms a resist pattern on the resist underlayer film, and then transfers the resist pattern to the resist underlayer film to form an underlayer film pattern.
- a multi-stage film having a process of transferring this lower layer film pattern as an etching mask to a substrate to be processed.
- the resist underlayer film forming composition is preferably used in a multilayer resist process including a step of forming a silicon oxide film on the resist underlayer film surface and dry etching the silicon oxide film. Since the resist underlayer film forming composition can suppress a warp of a substrate to be processed and can form a resist underlayer film having excellent etching resistance and crack resistance as described above, it can be suitably used for such applications. it can.
- the resist underlayer film forming composition is [B] It is preferable to further contain an acid generator.
- the acid generator is a component that generates an acid upon exposure or heating, and the composition for forming a resist underlayer film contains the [B] acid generator, whereby [A1] a crosslinking reaction of the polymer. Can be further promoted.
- the polymer is Structural unit (I) represented by the following formula (1), It is a polymer containing at least one structural unit selected from the group consisting of the structural unit (II) represented by the following formula (2) and the structural unit (IV) represented by the following formula (4). Is preferred.
- R 1 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 2 is a monovalent hydrocarbon group.
- R 3 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 4 is a single bond or a chain hydrocarbon group having 1 to 4 carbon atoms.
- R 5 Is a phenyl group, a naphthyl group or an anthranyl group, provided that part or all of the hydrogen atoms of the phenyl group, naphthyl group and anthranyl group may be substituted with an alkyl group.
- R 9 is a hydroxy group, mercapto group, amino group, halogen atom, hydrocarbon group having 1 to 20 carbon atoms, —OR 11 group or —COOR 12 group.
- R 11 is a hydrocarbon group having 1 to 20 carbon atoms, and part or all of the hydrogen atoms of the hydrocarbon group may be substituted with a hydroxy group or an epoxy group.
- R 12 is a hydrocarbon group having 1 to 20 carbon atoms.
- R 10 is an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- n1 is 0 or 1. When n1 is 0, n2 is an integer of 1 to 4. When n1 is 1, n2 is an integer of 1-6. n3 is an integer of 1 to 4. However, when n1 is 0, the condition of 1 ⁇ n2 + n3 ⁇ 4 is satisfied. When n1 is 1, the condition of 1 ⁇ n2 + n3 ⁇ 6 is satisfied. Also, in the case of multiple R 9 and R 10 are each, may be different in each of a plurality of R 9 and R 10 are the same. * Indicates a bond. )
- the Tg of the [A1] polymer can be relatively lowered.
- the resist underlayer film formed from the composition for forming a resist underlayer film containing the [A1] polymer is superior in etching resistance and crack resistance, and can further suppress warpage of the substrate to be processed.
- the polymer is preferably a polymer containing the structural unit (III) having a —CH 2 OH group and an aromatic group.
- the crosslinkability of the [A1] polymer is improved because the [A1] polymer contains the structural unit (III).
- the resist underlayer film forming composition is [A2] Polymer whose Tg exceeds 180 ° C. (hereinafter also referred to as “[A2] polymer”) It is preferable to further contain.
- the resist underlayer film forming composition further improves the etching resistance of the resist underlayer film to be formed by further containing the [A2] polymer having a Tg of over 180 ° C. in addition to the [A1] polymer. it can.
- the content of the [A] polymer is preferably 10 parts by mass or more and 40 parts by mass or less with respect to 100 parts by mass in total of the [A1] polymer and the [A2] polymer. According to the composition for forming a resist underlayer film, warping of the substrate to be processed can be further suppressed by setting the content of the [A1] polymer in the specific range.
- the Tg of the [A1] polymer is preferably 70 ° C or higher and 150 ° C or lower. According to the composition for forming a resist underlayer film, the warpage of the substrate to be processed can be further suppressed by setting the Tg of the [A1] polymer in the specific range.
- the Tg of the [A2] polymer is preferably 200 ° C. or higher. According to the resist underlayer film forming composition, the warpage of the substrate to be processed can be further suppressed by setting the Tg of the [A2] polymer within the specific range.
- the polymer is Structural unit (I) represented by the following formula (1), Structural unit (II) represented by the following formula (2), A structural unit (III) having a —CH 2 OH group and an aromatic group, and a structural unit (IV) represented by the following formula (4):
- R 1 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 2 is a monovalent hydrocarbon group.
- R 3 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 4 is a single bond or a chain hydrocarbon group having 1 to 4 carbon atoms.
- R 5 Is a phenyl group, a naphthyl group or an anthranyl group, provided that part or all of the hydrogen atoms of the phenyl group, naphthyl group and anthranyl group may be substituted with an alkyl group.
- R 9 is a hydroxy group, mercapto group, amino group, halogen atom, hydrocarbon group having 1 to 20 carbon atoms, —OR 11 group or —COOR 12 group.
- R 11 is a hydrocarbon group having 1 to 20 carbon atoms, and part or all of the hydrogen atoms of the hydrocarbon group may be substituted with a hydroxy group or an epoxy group.
- R 12 is a hydrocarbon group having 1 to 20 carbon atoms.
- R 10 is an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- n1 is 0 or 1. When n1 is 0, n2 is an integer of 1 to 4. When n1 is 1, n2 is an integer of 1-6.
- n3 is an integer of 1 to 4.
- the Tg of the [A1] polymer can be made relatively low.
- the resist underlayer film formed from the composition for forming a resist underlayer film containing the [A1] polymer can further suppress the warpage of the substrate to be processed.
- the polymer includes a structural unit (V) represented by the following formula (5), a structural unit (VI) represented by the following formula (6), and a structural unit (VII) represented by the following formula (7). And a polymer containing at least one structural unit selected from the group consisting of structural units (VIII) having a fullerene skeleton.
- the polymer can have a relatively high Tg by including the specific structural unit. As a result, the resist underlayer film formed from the composition for forming a resist underlayer film containing the [A2] polymer is more excellent in etching resistance.
- R 13 and R 14 each independently represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, or 6 carbon atoms. 14 to 14 aryl groups. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- R 15 is an alkyl group having 1 to 6 carbon atoms, an acyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 14 carbon atoms. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- n4 is 0 or 1.
- R 16 is a hydroxy group, mercapto group, amino group, halogen atom, hydrocarbon group having 1 to 20 carbon atoms, —OR 18 group or —COOR 19 group.
- R 18 is a hydrocarbon group having 1 to 20 carbon atoms, and part or all of the hydrogen atoms of the hydrocarbon group may be substituted with a hydroxy group or an epoxy group.
- R 19 is a monovalent hydrocarbon group having 1 to 20 carbon atoms.
- n5 is an integer of 0 to 6. If R 16 is plural, plural R 16 may be the same or different.
- R 17 is a single bond, an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- R 18 to R 20 are each independently a single bond or a divalent organic group, provided that R 18 to R 20 are not simultaneously a single bond.
- the resist underlayer film forming composition preferably further contains a [B] acid generator.
- the acid generator is a component that generates an acid upon exposure or heating, and the composition for forming a resist underlayer film contains the [B] acid generator, whereby the [A1] polymer and / or [A2] The crosslinking reaction of the polymer can be further promoted.
- the resist underlayer film forming composition preferably further contains a [C] crosslinking agent.
- the composition for forming a resist underlayer film can further promote the crosslinking reaction of the [A1] polymer and / or the [A2] polymer by further containing a [C] crosslinking agent.
- the method for producing the resist underlayer film forming composition of the present invention comprises: [A1] It has a step of mixing a polymer having Tg of 0 ° C. or higher and 180 ° C. or lower and a polymer having [A2] Tg of higher than 180 ° C. According to the method for producing a composition for forming a resist underlayer film, a composition for forming a resist underlayer film capable of suppressing warpage of a substrate to be processed can be easily produced.
- the pattern forming method of the present invention comprises: (1) forming a resist underlayer film on the substrate to be processed using the resist underlayer film forming composition; (2) forming a silicon-based oxide film on the resist underlayer film surface; (3) applying a resist composition to the surface of the silicon-based oxide film, exposing, heating and developing to form a resist pattern; (4) A step of sequentially dry-etching the silicon oxide film and the resist underlayer film using the resist pattern as a mask, and (5) a dry etching of the substrate to be processed using the resist underlayer film dry-etched in the step (4) as a mask. The process of carrying out.
- a resist underlayer film that can suppress warpage of the substrate to be processed can be formed, so that a pattern having a deep processing depth can be transferred.
- the present invention also includes a resist underlayer film formed from the resist underlayer film forming composition. Since the resist underlayer film is formed from the resist underlayer film forming composition, warpage of the substrate to be processed is suppressed, and etching resistance and crack resistance are excellent.
- the “glass transition temperature (Tg)” in this specification is a temperature at which a glass transition occurs in an amorphous solid material, and is a value measured by a differential scanning calorimetry method at a heating rate of 20 ° C./min.
- the “static contact angle” refers to an angle formed when a liquid droplet drops on the resist underlayer film and a stationary droplet forms with the substrate surface.
- the “static contact angle” can be measured by various conventionally known means.
- the prepared resist underlayer film forming composition is applied by spin coating onto a silicon wafer having a diameter of 8 inches. Thereafter, heating was performed at 180 ° C. for 60 seconds in a hot plate having an oxygen concentration of 20% by volume, followed by heating at 300 ° C.
- the composition for forming a resist underlayer film of the present invention can suppress a warp of a substrate to be processed and can form a resist underlayer film excellent in etching resistance and crack resistance, so that the processing depth is deep in the dry etching process of the substrate to be processed. This is suitable for transferring a pattern. Therefore, the resist underlayer film forming composition can be suitably used in the production of semiconductor devices and the like that are expected to be further diversified in the future.
- composition for forming a resist underlayer film of the present invention contains a polymer having [A1] Tg of 0 ° C. or higher and 180 ° C. or lower. Therefore, even when the film thickness of the resist underlayer film formed from the resist underlayer film forming composition is relatively thick, the residual stress of the resist underlayer film caused by heating can be reduced. It is possible to form a resist underlayer film that suppresses warpage of the substrate to be processed and is excellent in etching resistance and crack resistance.
- the resist underlayer film forming composition can transfer a pattern with a deep processing depth while suppressing the generation of cracks even in a dry etching process of a substrate to be processed including a step of forming an inorganic film on the resist underlayer film. It becomes possible.
- the resist underlayer film forming composition examples include a resist underlayer film forming composition (I) and a resist underlayer film forming composition (II).
- the resist underlayer film forming composition (I) can be suitably used particularly for a multilayer resist process including a step of forming a silicon oxide film on the resist underlayer film surface and dry etching the silicon oxide film.
- the etching resistance of the resist underlayer film to be formed can be improved.
- Resist underlayer film forming composition (II) has [A2] polymer in addition to [A1] polymer.
- the resist underlayer film forming composition may contain a [B] acid generator and a [C] cross-linking agent as suitable components.
- the composition for forming a resist underlayer film may contain other optional components as long as the effects of the present invention are not impaired. Hereinafter, each component will be described in detail.
- the polymer is not particularly limited as long as the Tg is a polymer having a Tg of 0 ° C. or higher and 180 ° C. or lower.
- a polymer containing at least one structural unit selected from the group consisting of the unit (II) and the structural unit (IV) represented by the formula (4) is preferable.
- the [A1] polymer contains the specific structural unit, the Tg of the [A1] polymer can be made relatively low.
- the resist underlayer film formed from the resist underlayer film forming composition containing the [A1] polymer further suppresses the warpage of the substrate to be processed, and is more excellent in etching resistance and crack resistance.
- the polymer is preferably a polymer containing the structural unit (III) having a —CH 2 OH group and an aromatic group.
- the crosslinkability of the [A1] polymer improves because the [A1] polymer contains the structural unit (IV).
- the polymer may contain a structural unit (V) described later as a structural unit other than the structural units (I) to (IV) as long as the effects of the present invention are not impaired.
- the polymer may contain two or more of each structural unit. Hereinafter, each structural unit will be described in detail.
- the structural unit (I) is represented by the above formula (1).
- R ⁇ 1 > is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
- R 2 is a monovalent hydrocarbon group.
- Examples of the monovalent hydrocarbon group represented by R 2 include a monovalent aromatic hydrocarbon group and a monovalent chain hydrocarbon group.
- Examples of the monovalent aromatic hydrocarbon group include an aromatic hydrocarbon group having 6 to 12 carbon atoms, and specific examples include a phenyl group and a naphthyl group.
- Examples of the monovalent chain hydrocarbon group include a methyl group, an ethyl group, a propyl group, and a butyl group.
- Examples of the structural unit (I) include a structural unit represented by the following formula.
- R 1 is as defined in the above formula (1).
- the content of the structural unit (I) in the polymer is preferably 1 mol% to 50 mol%, and preferably 5 mol% to 40 mol%, based on all structural units constituting the [A1] polymer. More preferred. By making the content rate of structural unit (I) into the said specific range, Tg of a [A1] polymer can be made comparatively low.
- the structural unit (II) is represented by the above formula (2).
- R 3 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 4 is a single bond or a chain hydrocarbon group having 1 to 4 carbon atoms.
- R 5 is a phenyl group, a naphthyl group, or an anthranyl group.
- one part or all part of the hydrogen atom which the said phenyl group, naphthyl group, and anthranyl group have may be substituted by the alkyl group.
- Examples of the chain hydrocarbon group having 1 to 4 carbon atoms represented by R 4 include a methanediyl group, an ethanediyl group, a propanediyl group, and a butanediyl group.
- Examples of the structural unit (II) include a structural unit represented by the following formula.
- R ⁇ 3 > is synonymous with the said Formula (2).
- the content of the structural unit (II) in the polymer is preferably 30 mol% to 80 mol%, and preferably 40 mol% to 70 mol%, based on all structural units constituting the [A1] polymer. More preferred. By making the content rate of structural unit (II) into the said specific range, the etching tolerance of the said resist underlayer film can be improved, keeping Tg of a [A1] polymer comparatively low.
- the structural unit (III) is a structural unit having a —CH 2 OH group and an aromatic group.
- Examples of the structural unit (III) include a structural unit represented by the following formula (3).
- R 6 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 7 is a single bond or a chain hydrocarbon group having 1 to 4 carbon atoms.
- R 8 is a phenyl group, a naphthyl group, or an anthranyl group. However, some or all of the hydrogen atoms of the phenyl group, naphthyl group, and anthranyl group are substituted with —CH 2 OH groups.
- the content of the structural unit (III) in the polymer is preferably 1 mol% to 50 mol%, preferably 5 mol% to 40 mol%, based on all the structural units constituting the [A1] polymer. More preferred. By making the content rate of structural unit (III) into the said specific range, the crosslinkability of a [A1] polymer can be made more suitable.
- the structural unit (IV) is represented by the above formula (4).
- R 9 is a hydroxy group, a mercapto group, an amino group, a halogen atom, a hydrocarbon group having 1 to 20 carbon atoms, an —OR 11 group or a —COOR 12 group.
- R 11 is a hydrocarbon group having 1 to 20 carbon atoms, and part or all of the hydrogen atoms of the hydrocarbon group may be substituted with a hydroxy group or an epoxy group.
- R 12 is a hydrocarbon group having 1 to 20 carbon atoms.
- R 10 is an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- n1 is 0 or 1. When n1 is 0, n2 is an integer of 1 to 4. When n1 is 1, n2 is an integer of 1-6. n3 is an integer of 1 to 4. However, when n1 is 0, the condition of 1 ⁇ n2 + n3 ⁇ 4 is satisfied. When n1 is 1, the condition of 1 ⁇ n2 + n3 ⁇ 6 is satisfied. Also, in the case of multiple R 9 and R 10 are each, may be different in each of a plurality of R 9 and R 10 are the same. * Indicates a bond.
- Examples of the monovalent hydrocarbon group having 1 to 20 carbon atoms represented by R 9 , R 11 and R 12 include, for example, a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, and 3 to 20 carbon atoms. And a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms.
- Examples of the monovalent chain hydrocarbon group having 1 to 20 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a sec-butyl group, monovalent saturated hydrocarbon groups such as a tert-butyl group, an n-pentyl group, an iso-pentyl group, a sec-pentyl group, and a tert-pentyl group; And monovalent unsaturated chain hydrocarbon groups such as an ethenyl group, a propenyl group, a butenyl group, a pentenyl group, an ethynyl group, and a propynyl group.
- Examples of the monovalent cyclic hydrocarbon group having 3 to 20 carbon atoms include monocyclic saturated cyclic hydrocarbon groups such as a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group; a cyclobutenyl group and a cyclopentenyl group And monovalent monocyclic unsaturated cyclic hydrocarbon groups such as a cyclohexenyl group; monovalent polycyclic cyclic hydrocarbon groups such as a norbornyl group, an adamantyl group, a tricyclodecyl group, a tetracyclododecyl group, and the like. It is done.
- aromatic hydrocarbon group having 6 to 20 carbon atoms examples include phenyl group, methylphenyl group, naphthyl group, methylnaphthyl group, anthryl group, and methylanthryl group.
- Examples of the epoxy group for R 11 include an oxetanyl group and an oxiranyl group.
- examples of the hydrocarbon group in which part or all of the hydrogen atoms are substituted with an epoxy group include a glycidyl group.
- examples of the hydrocarbon group in which part or all of the hydrogen atoms in R 11 are substituted with a hydroxy group include methylol, 2-hydroxyethyl, 3-hydroxypropyl, and the like.
- Examples of the —OR 11 group represented by R 9 include a methoxy group, an ethoxy group, a propoxy group, and a butoxy group.
- Examples of the —COOR 12 group represented by R 9 include a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, and a butoxycarbonyl group.
- Examples of the alkanediyl group having 1 to 10 carbon atoms represented by R 10 include a methanediyl group and an ethanediyl group.
- Examples of the arylene group having 6 to 14 carbon atoms represented by R 10 include a phenylene group, a naphthylene group, and an anthrylene group.
- Examples of the alkylene ether group represented by R 10 include an ethylene ether group and a propylene ether group. The number of carbon atoms in the alkylene moiety of the alkylene ether group is preferably 2-20.
- Examples of the structural unit (IV) include a structural unit represented by the following formula.
- the content of the structural unit (IV) in the [A1] polymer is preferably 10 mol% to 100 mol% with respect to all the structural units constituting the [A1] polymer.
- the polymer may contain structural units other than the structural units (I) to (IV) as long as the effects of the present invention are not impaired.
- the Tg of the [A1] polymer contained in the resist underlayer film forming composition is 0 ° C. or higher and 180 ° C. or lower, preferably 40 ° C. or higher and 160 ° C. or lower, more preferably 70 ° C. or higher and 150 ° C. or lower. is there.
- the polymer can be synthesized, for example, by polymerizing a monomer that gives each predetermined structural unit in a suitable solvent using a radical polymerization initiator. Or it can synthesize
- aldehydes such as predetermined phenols or the compound or the polymer obtained by the said superposition
- a solution containing a monomer and a radical initiator is dropped into a reaction solvent or a solution containing a monomer to cause a polymerization reaction; a solution containing the monomer and a radical initiator A solution containing each of the monomers separately added to a reaction solvent or a solution containing a monomer to cause a polymerization reaction; a plurality of types of solutions containing each monomer; and a solution containing a radical initiator
- a method in which a polymerization reaction is performed by dropping the solution into a reaction solvent or a solution containing a monomer is preferable.
- the reaction temperature in these synthesis methods is appropriately determined depending on the type of initiator used, but is usually 30 ° C. to 180 ° C., preferably 40 ° C. to 160 ° C., and more preferably 50 ° C. to 140 ° C.
- the total reaction time including the dropping time is appropriately determined depending on the reaction temperature, the type of initiator used, the monomer to be reacted, etc., but is usually from 30 minutes to 12 hours, usually from 1 hour to 8 hours. Is preferred.
- radical initiator used in the polymerization examples include 2,2′-azobisisobutyronitrile, 2,2′-azobis (4-methoxy-2,4-dimethylvaleronitrile), and 2,2′-. Azobis (2-cyclopropylpropionitrile), 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis (2-methylpropionitrile), 2,2-azobis (isobutyric acid) ) Dimethyl and the like. These initiators may be used alone or in combination of two or more.
- a solvent other than a solvent that inhibits polymerization nitrobenzene having a polymerization inhibiting effect, mercapto compound having a chain transfer effect, etc.
- the solvent is not particularly limited as long as it is a soluble solvent.
- the polymerization solvent include ketone solvents, amide solvents, ester / lactone solvents, nitrile solvents, and mixed solvents thereof. These solvents may be used alone or in combination of two or more.
- aldehyde used in the crosslinking reaction examples include saturated aliphatic aldehydes such as formaldehyde, paraformaldehyde, acetaldehyde, and propyl aldehyde; unsaturated aliphatic aldehydes such as acrolein and methacrolein; and heterocycles such as furfural.
- aldehydes aromatic aldehydes such as benzaldehyde, naphthylaldehyde, anthraldehyde, and the like. Of these, formaldehyde and paraformaldehyde are preferable.
- These aldehydes can be used individually by 1 type or in mixture of 2 or more types.
- the amount of the aldehyde used is preferably 10 parts by mass to 100 parts by mass with respect to 100 parts by mass of the compound such as phenols.
- Examples of the acid catalyst used in the crosslinking reaction include mineral acids such as sulfuric acid, phosphoric acid and perchloric acid; organic sulfonic acids such as p-toluenesulfonic acid; carboxylic acids such as formic acid and oxalic acid.
- the amount of the acid catalyst to be used is variously selected depending on the type of acids to be used. For example, the amount is usually 0.001 parts by mass to 10,000 parts by mass with respect to 100 parts by mass of a compound such as phenols. 0.01 parts by weight to 1,000 parts by weight is preferable, and 0.1 to 10 parts by weight is more preferable.
- the reaction temperature for the crosslinking reaction is preferably 40 ° C to 200 ° C.
- the reaction time is variously selected depending on the reaction temperature, but preferably 30 minutes to 72 hours.
- the polymer obtained by the above polymerization reaction, crosslinking reaction or the like is preferably recovered by a reprecipitation method. That is, after completion of the reaction, the target polymer is recovered as a powder by introducing the reaction solution into a reprecipitation solvent.
- a reprecipitation solvent alcohols and alkanes may be used alone, or two or more kinds may be used in combination.
- the polymer can be recovered by removing low-molecular components such as monomers and oligomers by a liquid separation operation, a column operation, an ultrafiltration operation, or the like.
- the weight average molecular weight (Mw) in terms of polystyrene by gel permeation chromatography (GPC) of the polymer is not particularly limited, but is preferably 1,000 or more and 50,000 or less, and preferably 2,000 or more and 40,000 or less. More preferred.
- Mw of the [A1] polymer is less than 1,000, the film formability when the resist underlayer film is formed tends to be lowered.
- Mw of the [A1] polymer exceeds 50,000, the adhesiveness of the resist underlayer film tends to be lowered.
- Mw is a GPC column (manufactured by Tosoh Corporation, two G2000HXL, two G2000HXL, one G3000HXL), under the analysis conditions of a flow rate of 1.0 ml / min, elution solvent tetrahydrofuran, and column temperature of 40 ° C.
- the polymer is a polymer having a Tg exceeding 180 ° C.
- the polymer is not particularly limited as long as Tg is a polymer exceeding 180 ° C., but the structural unit (V) represented by the above formula (5) and the structural unit represented by the above formula (6).
- V structural unit represented by the above formula (5)
- VI structural unit represented by the above formula (6).
- VI A polymer containing at least one structural unit selected from the group consisting of structural unit (VII) represented by formula (7) and structural unit (VIII) having a fullerene skeleton is preferable. .
- the [A2] polymer contains the specific structural unit, the Tg of the [A2] polymer can be made relatively high.
- the resist underlayer film formed from the composition for forming a resist underlayer film containing the [A2] polymer is more excellent in etching resistance.
- the [A2] polymer may contain 2 or more types of each structural unit, respectively. Hereinafter, each structural unit will be described in detail.
- the structural unit (V) is represented by the above formula (5).
- R 13 and R 14 each independently represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an alkoxycarbonyl having 2 to 10 carbon atoms. Group or an aryl group having 6 to 14 carbon atoms. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- R 15 is an alkyl group having 1 to 6 carbon atoms, an acyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 14 carbon atoms. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- n4 is 0 or 1.
- Examples of the alkyl group having 1 to 6 carbon atoms or the aryl group having 6 to 14 carbon atoms represented by R 13 , R 14 and R 15 are exemplified in the description of the structural units (I) to (IV) described above. And the like.
- Examples of the alkoxycarbonyl group having 2 to 10 carbon atoms represented by R 13 and R 14 include a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, and a butoxycarbonyl group.
- Examples of the acyl group having 2 to 10 carbon atoms represented by R 15 include an acetyl group, a propionyl group, a butyryl group, and an isobutyryl group.
- Examples of the structural unit (V) include a structural unit represented by the following formula.
- the content of the structural unit (V) in the [A2] polymer is preferably 10 mol% to 90 mol% with respect to all the structural units constituting the [A2] polymer.
- the structural unit (VI) is represented by the above formula (6).
- R 16 is a hydroxy group, mercapto group, amino group, halogen atom, hydrocarbon group having 1 to 20 carbon atoms, —OR 18 group or —COOR 19 group.
- R 18 is a monovalent hydrocarbon group having 1 to 20 carbon atoms, and part or all of the hydrogen atoms of the hydrocarbon group may be substituted with a hydroxy group or an epoxy group.
- R 19 is a hydrocarbon group having 1 to 20 carbon atoms.
- n5 is an integer of 0 to 6. If R 16 is plural, plural R 16 may be the same or different.
- R 17 is a single bond, an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group. However, some or all of the hydrogen atoms contained in these groups may be substituted with alkyl groups.
- Examples of the arylene group and alkylene ether include the groups exemplified in the description of the structural units (I) to (IV).
- the content of the structural unit (VI) in the [A2] polymer is preferably 10 mol% to 100 mol% with respect to all the structural units constituting the [A2] polymer.
- the structural unit (VII) is represented by the above formula (7).
- R 18 to R 20 are each independently a single bond or a divalent organic group. However, R 18 to R 20 are not simultaneously a single bond.
- Examples of the divalent organic group represented by R 18 to R 20 include a divalent aromatic group, a divalent saturated aliphatic group, and a divalent unsaturated aliphatic group.
- Examples of the divalent aromatic group include a phenylene group, a tolylene group, a dimethylphenylene group, a trimethylphenylene group, an aminophenylene group, a pyridylene group, an ethynylphenylene group, a biphenylene group, and a naphthylene group.
- divalent saturated aliphatic group examples include linear or branched alkanediyl groups having 1 to 6 carbon atoms such as methanediyl group and ethanediyl group; and those having 1 to 6 carbon atoms such as cyclopentanediyl group and cyclohexanediyl group. 10 alicyclic cycloalkanediyl groups and the like can be mentioned.
- divalent unsaturated aliphatic group examples include linear or branched alkenylene groups having 2 to 6 carbon atoms such as vinylidene group, arylene group, 1-butenediyl group and 2-butenediyl group.
- the content of the structural unit (VII) in the [A2] polymer is preferably 10 mol% to 100 mol% with respect to all the structural units constituting the [A2] polymer.
- the structural unit (VIII) has a fullerene skeleton.
- the structural unit (VIII) is not particularly limited as long as it has a fullerene skeleton.
- the content of the structural unit (VIII) in the polymer is preferably 10 mol% to 100 mol% with respect to all the structural units constituting the [A2] polymer. By making the content rate of a structural unit (VIII) into the said specific range, Tg of a [A2] polymer can be made comparatively high.
- the polymer may contain structural units other than the structural units (V) to (VIII) as long as the effects of the present invention are not impaired.
- the Tg of the [A2] polymer contained in the resist underlayer film forming composition is higher than 180 ° C., preferably 200 ° C. or higher.
- the content of [A2] polymer is preferably 60 parts by mass or more and 90 parts by mass or less with respect to the total of [A1] polymer and [A2] polymer. [A2] By setting the content of the polymer within the specific range, warpage of the substrate to be processed can be further suppressed.
- the [A2] polymer can be synthesized by a method similar to the above-described method for synthesizing the [A1] polymer.
- the Mw of the [A2] polymer is not particularly limited, but is preferably 1,000 or more and 50,000 or less, and more preferably 2,000 or more and 40,000 or less. [A2] If the Mw of the polymer is less than 1,000, the film formability when the resist underlayer film is formed tends to be lowered. On the other hand, when the Mw of the [A2] polymer exceeds 50,000, the adhesiveness when used as a resist underlayer film tends to be lowered.
- the resist underlayer film forming composition preferably contains a [B] acid generator.
- the acid generator is a component that generates an acid upon exposure or heating, and the composition for forming a resist underlayer film contains the [B] acid generator, thereby cross-linking [A1] a polymer or the like. The reaction can be further promoted.
- the content of the [B] acid generator in the resist underlayer film forming composition may be a compound as described below (hereinafter, this mode is also referred to as “[B] acid generator”). It may be an embodiment incorporated as a part or both of these embodiments.
- Examples of the acid generator include onium salt compounds and N-sulfonyloxyimide compounds.
- the acid generator is preferably an onium salt compound.
- onium salt compounds examples include sulfonium salts, tetrahydrothiophenium salts, and iodonium salts.
- sulfonium salt examples include triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluoro-n-butanesulfonate, triphenylsulfonium perfluoro-n-octanesulfonate, triphenylsulfonium 2-bicyclo [2.2.1] hept- 2-yl-1,1,2,2-tetrafluoroethanesulfonate, 4-cyclohexylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-cyclohexylphenyldiphenylsulfonium nonafluoro-n-butanesulfonate, 4-cyclohexylphenyldiphenylsulfonium perfluoro- n-octanesulfonate, 4-cyclohexylphenyldiphenylsulfonium 2-bicyclo [2.
- triphenylsulfonium trifluoromethanesulfonate triphenylsulfonium nonafluoro-n-butanesulfonate and triphenylsulfonium 1,1,2,2-tetrafluoro-6- (1-adamantane carbonyloxy)- Hexane-1-sulfonate is preferred.
- tetrahydrothiophenium salt examples include 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium nona.
- iodonium salt examples include diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium perfluoro-n-octanesulfonate, diphenyliodonium 2-bicyclo [2.2.1] hept-2-yl- 1,1,2,2-tetrafluoroethanesulfonate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-t -Butylphenyl) iodonium perfluoro-n-octanesulfonate, bis (4-t-butylphenyl) iodonium 2-bicyclo [2.2.1] hept-2-yl-1,1,2,
- N-sulfonyloxyimide compounds include N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy).
- [B] acid generators may be used alone or in combination of two or more.
- the content when the acid generator is a [B] acid generator is preferably 0.1 parts by mass or more and 15 parts by mass or less with respect to 100 parts by mass of the polymer [A], and 1 part by mass or more. 10 parts by mass or less is more preferable.
- the resist underlayer film forming composition preferably further contains a [C] crosslinking agent.
- the crosslinking reaction of the [A1] polymer and the [A2] polymer can be further promoted.
- the crosslinking agent include epoxy resins having a condensed polycyclic skeleton, epoxy resins having a biphenyl skeleton, epoxy resins having an oxazolidone ring skeleton, amine-type epoxy resins, compounds having an alkoxymethylated amino group, and the like. Is mentioned.
- the condensed polycyclic skeleton is a cyclic hydrocarbon formed by sharing two or more monocycles with each other, or a cyclic compound containing a hetero atom.
- the single ring may be a ring composed of a saturated bond or a ring having an unsaturated bond.
- the unsaturated bond is a bond selected from a carbon-carbon double bond, a carbon-nitrogen double bond, and a carbon-carbon triple bond.
- Examples of the condensed polycyclic skeleton include naphthalene, fluorene, dicyclopentadiene, anthracene and the like.
- epoxy resins having a naphthalene skeleton include, for example, Epicron (registered trademark) HP4032, HP4032D, HP4700, HP4770 (above, Dainippon Ink and Chemicals), NC-7000, NC-7300 (above, Japan) Kasei), ESN-175, ESN-360 (above, manufactured by Tohto Kasei) and the like.
- Examples of commercially available epoxy resins having a fluorene skeleton include ONCOAT (registered trademark) EX-1010, EX-1011, EX-1012, EX-1020, EX-1030, EX-1030, EX-1040, and EX. -1050, EX-1051 (manufactured by Nagase Sangyo) and the like.
- epoxy resins having a dicyclopentadiene skeleton include, for example, Epicron (registered trademark) HP7200, HP7200L, HP7200H (above, manufactured by Dainippon Ink and Chemicals), Tactix558 (manufactured by Huntsman Advanced Materials), XD- 1000-1L, XD-1000-2L, XD-1000-1L, XD-1000-2L (above, manufactured by Nippon Kayaku).
- Examples of commercially available epoxy resins having an anthracene skeleton include jER (registered trademark) YX8800 (manufactured by Japan Epoxy Resin).
- Examples of commercially available epoxy resins having a biphenyl skeleton include jER (registered trademark) YX4000H, YX4000, YL6616, YL6121H, YL6640 (manufactured by Japan Epoxy Resin), NC3000 (manufactured by Nippon Kayaku). It is done.
- Examples of commercially available epoxy resins having an oxazolidone ring skeleton include AER4152, XAC4151, and the like, manufactured by Asahi Kasei Epoxy.
- the epoxy resin having an oxazolidone ring skeleton can also be obtained by, for example, the method described in JP-A No. 2003-119253, for example, by reacting an epoxy resin with an isocyanate compound in the presence of a catalyst.
- an epoxy resin having an oxazolidone ring skeleton and a naphthalene skeleton is preferable because of a good balance between elastic modulus and toughness.
- amine-type epoxy resins include tetraglycidyldiaminodiphenylmethane, triglycidylaminophenol, triglycidylaminocresol, diglycidylaniline, diglycidyltoluidine, tetraglycidylxylylenediamine, and halogen-substituted products, alkyl-substituted products, and alkoxy-substituted products thereof. , Aryl-substituted, aryloxy-substituted and hydrogenated products.
- Examples of commercially available tetraglycidyldiaminodiphenylmethane include Sumiepoxy (registered trademark) ELM434 (manufactured by Sumitomo Chemical), YH434L (manufactured by Tohto Kasei), jER (registered trademark) 604 (manufactured by Japan Epoxy Resin), and Araldide (registered trademark).
- ELM434 manufactured by Sumitomo Chemical
- YH434L manufactured by Tohto Kasei
- jER registered trademark
- 604 manufactured by Japan Epoxy Resin
- Araldide registered trademark
- MY720, MY721 manufactured by Huntsman Advanced Materials
- triglycidylaminophenol or triglycidylaminocresol Commercially available products of the above-mentioned triglycidylaminophenol or triglycidylaminocresol include Sumiepoxy (registered trademark) ELM100, ELM120 (manufactured by Sumitomo Chemical Co., Ltd.), Araldide (registered trademark) MY0500, MY0510, MY0600 (Huntsman Advanced Materials). And jER (registered trademark) 630 (manufactured by Japan Epoxy Resin) and the like.
- Examples of commercially available diglycidyl aniline include GAN (manufactured by Nippon Kayaku).
- Examples of commercially available diglycidyl toluidine include GOT (manufactured by Nippon Kayaku).
- Examples of commercially available tetraglycidylxylylenediamine and hydrogenated products thereof include TETRAD (registered trademark) -X and TETRAD (registered trademark) -C (manufactured by Mitsubishi Gas Chemical).
- Examples of the compound having an alkoxymethylated amino group include melamine compounds such as hexamethoxymethyl melamine and hexabutoxymethyl melamine, and glycoluril compounds such as tetramethoxymethyl glycoluril and tetrabutoxyglycoluril.
- compounds having an alkoxymethylated amino group are preferred because they give the resist underlayer film high toughness in addition to improving the balance between elastic modulus and plastic deformation ability.
- crosslinking agents that can be used in combination include, for example, phenol novolac type epoxy resins, cresol novolac type epoxy resins, resorcinol type epoxy resins, phenol aralkyl type epoxy resins, triphenylmethane type epoxy resins, tetraphenylethane type epoxy resins. Examples thereof include resins.
- phenol novolac epoxy resins examples include jER (registered trademark) 152, 154 (above, Japan Epoxy Resin), Epicron (registered trademark) N-740, N-770, N-775 (or more). , Manufactured by Dainippon Ink & Chemicals, Inc.).
- cresol novolac type epoxy resin examples include, for example, Epicron (registered trademark) N-660, N-665, N-670, N-673, N-695 (above, manufactured by Dainippon Ink and Chemicals, Inc.). ), EOCN-1020, EOCN-102S, EOCN-104S (above, Nippon Kayaku).
- Examples of commercially available resorcinol-type epoxy resins include Denacol (registered trademark) EX-201 (manufactured by Nagase ChemteX).
- triphenylmethane type epoxy resin examples include, for example, Tactix 742 (manufactured by Huntsman Advanced Materials), EPPN-501H, EPPN-502H (manufactured by Nippon Kayaku Co., Ltd.) and the like.
- Examples of the tetraphenylethane type epoxy resin include jER (registered trademark) 1031S (manufactured by Japan Epoxy Resin).
- Crosslinking agents may be used alone or in combination of two or more.
- the content of the crosslinking agent is preferably 0.1 parts by mass or more and 10 parts by mass or less, and more preferably 0.5 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the polymer [A1].
- the resist underlayer film forming composition usually contains a solvent.
- the solvent is not particularly limited as long as each component can be dissolved or dispersed, and examples thereof include ketone solvents, amide solvents, ether solvents, ester solvents, and mixed solvents thereof. These solvents can be used alone or in combination of two or more.
- ether solvents include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol monophenyl ether, ethylene glycol mono-2-ethylbutyl ether, Diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol mono Chirueteru, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, and the like.
- ketone solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-iso-butyl ketone, methyl-n-pentyl ketone, ethyl-n-butyl ketone, methyl-n- Ketones such as hexyl ketone, di-iso-butyl ketone, trimethylnonanone, cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone, methylcyclohexanone, 2,4-pentanedione, acetonyl acetone, diacetone alcohol, acetophenone A solvent etc. are mentioned.
- amide solvents include N, N′-dimethylimidazolidinone, N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, Examples thereof include N-methylpropionamide and N-methylpyrrolidone.
- ester solvents include diethyl carbonate, propylene carbonate, methyl acetate, ethyl acetate, ⁇ -valerolactone, n-propyl acetate, iso-propyl acetate, n-butyl acetate, iso-butyl acetate, sec-butyl acetate, acetic acid.
- solvents examples include benzene, toluene, xylene, mesitylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, iso-propylbenzene, diethylbenzene, iso-butylbenzene, triethylbenzene, di-iso-propylbenzene, aromatic hydrocarbon solvents such as n-amylnaphthalene; And halogen-containing solvents such as dichloromethane, chloroform, chlorofluorocarbon, chlorobenzene, and dichlorobenzene.
- propylene glycol monomethyl ether acetate propylene glycol monomethyl ether
- propylene glycol monomethyl ether ethyl 3-ethoxypropionate
- methyl 3-methoxypropionate ethyl lactate
- cyclohexanone ethylene glycol monomethyl ether acetate
- propylene glycol monomethyl ether ethyl 3-ethoxypropionate
- methyl 3-methoxypropionate ethyl lactate
- cyclohexanone cyclohexanone
- composition for forming a resist underlayer film can contain other optional components such as a surfactant and an accelerator as long as the effects of the present invention are not impaired.
- these optional components will be described in detail.
- Such other optional components may be used alone or in combination of two or more.
- the compounding quantity of another arbitrary component can be suitably determined according to the objective.
- a surfactant is a component that exhibits an effect of improving coatability, striation and the like.
- the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol diacrylate.
- nonionic surfactants such as stearate
- the following trade names are KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, no.
- the accelerator is a one-electron oxidizer or the like for sufficiently causing a dehydrogenation reaction necessary for oxidative crosslinking.
- a one-electron oxidant refers to an oxidant that itself undergoes one electron transfer.
- cerium (IV) ammonium nitrate cerium ion (IV) acquires one electron and changes to cerium ion (III).
- radical oxidizing agents such as halogen obtain one electron and convert it to an anion.
- the phenomenon of oxidizing the oxide by taking one electron from the oxide (substrate, catalyst, etc.) is called one-electron oxidation, and the component that receives one electron at this time is called one-electron oxidizing agent.
- Examples of the one-electron oxidizing agent include metal compounds, peroxides, diazo compounds, halogen atoms, and halogen acids.
- the metal compound examples include metal compounds containing cerium, lead, silver, manganese, osmium, ruthenium, vanadium, thallium, copper, iron, bismuth, nickel and the like.
- cerium salts such as cerium (IV) ammonium nitrate, cerium (IV) acetate, cerium (IV) nitrate, cerium (IV) sulfate; Lead compounds such as lead tetraacetate and lead (IV) oxide; Silver compounds such as silver oxide (I), silver oxide (II), silver carbonate (Fetizon reagent);
- Manganese compounds such as permanganate, activated manganese dioxide, manganese (III) salt; Osmium compounds such as osmium tetroxide; Ruthenium compounds such as ruthenium tetroxide; Vanadium compounds such as VOCl 3 , VOF 3 , V 2 O 5 , NH 4 VO 3 , NaVO 3 ; Thallium
- peroxide examples include peracids such as peracetic acid and m-chloroperbenzoic acid; Hydroxy peroxides such as hydrogen peroxide, alkyl hydroxy peroxides such as t-butyl hydroperoxide; Examples thereof include diacyl peroxide, peracid ester, peracid ketal, peroxydicarbonate, dialkyl peroxide, and peroxide ketone.
- diazo compound examples include 2,2'-azobisisobutyronitrile.
- halogen or halogen acid examples include halogen atoms such as chlorine, bromine and iodine, and perhalogen acids, halogen acids, halogen acids, hypohalous acids and salts thereof.
- peroxides and diazo compounds are preferred because of the inconvenience that metal residues and the like adhere to the substrate, and m-chloroperbenzoic acid, t-butyl hydroperoxide, 2,2 ′ -Azobisisobutyronitrile is more preferred.
- the composition for forming a resist underlayer film includes, for example, a [A1] polymer, and if necessary, a [A2] polymer, a [B] acid generator, a [C] cross-linking agent, and other optional components in the solvent. It can prepare by mixing in the ratio.
- the solvent is not particularly limited as long as it can dissolve or disperse the [A1] polymer, the [A2] polymer, [B] acid generator, [C] cross-linking agent and other optional components to be contained as necessary. .
- the composition for forming a resist underlayer film is usually prepared by dissolving in a solvent when used and then filtering with a filter having a pore size of about 0.1 ⁇ m, for example.
- the resist underlayer film-forming composition (II) containing the [A1] polymer and the [A2] polymer can be obtained by, for example, combining the [A1] polymer and the [A2] polymer in the above-mentioned solvent as needed.
- a composition for forming a resist underlayer film that can suppress warpage of a substrate to be processed and has improved etching resistance of the resist underlayer film can be easily produced. .
- the pattern forming method of the present invention comprises: (1) forming a resist underlayer film on the substrate to be processed using the resist underlayer film forming composition; (2) forming a silicon-based oxide film on the resist underlayer film surface; (3) applying a resist composition to the surface of the silicon-based oxide film, exposing, heating and developing to form a resist pattern; (4) A step of sequentially dry-etching the silicon oxide film and the resist underlayer film using the resist pattern as a mask, and (5) a dry etching of the substrate to be processed using the resist underlayer film dry-etched in the step (4) as a mask.
- the process of carrying out hereinafter, each process is explained in full detail.
- a resist underlayer film is formed on the substrate to be processed using the resist underlayer film forming composition.
- the substrate to be processed include insulating films such as silicon oxide, silicon nitride, silicon oxynitride, and polysiloxane, and commercially available products such as black diamond (manufactured by AMAT), silk (manufactured by Dow Chemical), LKD5109 (manufactured by JSR), and the like. And an interlayer insulating film such as a wafer coated with a low dielectric insulating film.
- a patterned substrate such as a wiring course (trench) or a plug groove (via) may be used.
- a coating film of the composition for forming a resist underlayer film is formed by applying it to the surface of a substrate to be processed or other underlayer film (antireflection film). Can be formed by curing by heat treatment, or irradiation with ultraviolet light and heat treatment. Examples of the method for applying the resist underlayer film forming composition include spin coating, roll coating, and dipping.
- the heating temperature is usually 150 ° C. to 500 ° C., preferably 180 ° C. to 350 ° C.
- the heating time is usually 30 seconds to 1,200 seconds, preferably 45 seconds to 600 seconds.
- the resist underlayer film forming composition contains [A1] polymer, and its Tg is 0 ° C. or higher and 180 ° C.
- a silicon-based oxide film is formed on the resist underlayer film surface.
- the silicon-based oxide film forming composition include NFC SOG508 (manufactured by JSR).
- a method for forming the silicon-based oxide film is not particularly limited, and examples thereof include a spin coating method, a coating method, and a CVD method.
- the heating temperature is usually 150 ° C. to 500 ° C., preferably 180 ° C. to 350 ° C.
- the heating time is usually 30 seconds to 1200 seconds, preferably 45 seconds to 600 seconds.
- the thickness of the silicon-based oxide film is usually 0.01 ⁇ m to 0.3 ⁇ m, preferably 0.02 ⁇ m to 0.1 ⁇ m.
- a resist composition is applied to the surface of the silicon-based oxide film, exposed, heated and developed to form a resist pattern.
- the resist composition include a positive or negative chemically amplified resist composition containing a photoacid generator, a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, and an alkali-soluble resin and a cross-link.
- negative resist compositions composed of an agent.
- a commercially available resist composition can also be used as such a resist composition.
- a method of applying the resist composition it can be applied by a conventional method such as a spin coating method.
- coat is adjusted so that the resist film obtained may become a desired film thickness.
- the method of forming a pattern includes a method of forming a pattern by a nanoimprint method, a method of forming a pattern using self-organization, and the like. .
- the resist film may be formed by pre-baking a coating film formed by applying the resist composition to volatilize a solvent in the coating film (that is, a solvent contained in the resist composition). it can.
- the pre-baking temperature is appropriately adjusted according to the type of resist composition to be used, but is preferably 30 ° C. to 200 ° C., more preferably 50 ° C. to 150 ° C.
- the heating time is usually 30 seconds to 200 seconds, preferably 45 seconds to 120 seconds.
- another film may be provided on the surface of the resist film.
- the film thickness of the resist film is usually 0.01 ⁇ m to 0.5 ⁇ m, preferably 0.02 ⁇ m to 0.3 ⁇ m.
- the resulting resist film is selectively irradiated with radiation through a photomask to expose the resist film.
- the radiation is appropriately selected from visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, ⁇ -ray, molecular beam, ion beam, etc., depending on the type of acid generator used in the resist composition.
- an immersion exposure method can also be employed.
- post-baking is performed to improve the resolution, pattern profile, developability, etc. of the resist film.
- the post-baking temperature is appropriately adjusted according to the type of resist composition used, but is usually about 30 ° C. to 200 ° C., preferably 50 ° C. to 150 ° C.
- the resist film is developed to form a resist pattern.
- the developer used for development can be appropriately selected depending on the type of resist composition used.
- a positive chemically amplified resist composition or a positive resist composition containing an alkali-soluble resin for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n- Propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo [5.
- alkaline aqueous solution such as 1,5-diazabicyclo [4.3.0] -5-nonene, and the like.
- alkaline aqueous solutions may be those obtained by adding an appropriate amount of a water-soluble organic solvent, for example, alcohols such as methanol and ethanol, and a surfactant.
- a negative chemically amplified resist composition and a negative resist composition containing an alkali-soluble resin for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, etc.
- Inorganic alkalis primary amines such as ethylamine and n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, dimethylethanolamine and triethanolamine Alcohol amines, tetramethylammonium hydroxide, tetraethylammonium hydroxide, quaternary ammonium salts such as choline, and alkaline aqueous solutions such as pyrrole, piperidine and other cyclic amines.
- primary amines such as ethylamine and n-propylamine
- secondary amines such as diethylamine and di-n-butylamine
- tertiary amines such as triethylamine and methyldiethylamine, dimethylethanolamine and triethanolamine
- Alcohol amines tetramethylammonium hydroxide,
- Step (4) the silicon oxide film and the resist underlayer film are sequentially dry etched using the resist pattern as a mask. Dry etching can be performed using a known dry etching apparatus.
- the source gas during dry etching depends on the elemental composition of the object to be etched, but includes oxygen atoms such as O 2 , CO, and CO 2 , inert gases such as He, N 2 , and Ar, Cl 2 , chlorine gas such as BCl 4 , fluorine gas such as CHF 3 and CF 4 , gas of H 2 and NH 3 , etc. can be used. In addition, these gases can also be mixed and used.
- the dry etching step (4) may include a step of etching the remaining silicon-based oxide film.
- the etching method include dry etching and wet etching, but dry etching is preferable. Dry etching can be performed using a known dry etching apparatus.
- a chlorine-based gas such as Cl 2 or BCl 4
- a fluorine-based gas such as CHF 3 or CF 4
- a gas of H 2 or NH 3 or the like can be usually used.
- these gases can also be mixed and used.
- the wet etching can be performed using, for example, a hydrogen fluoride aqueous solution, a hydrofluoric acid buffer solution, or the like.
- a hydrogen fluoride aqueous solution a hydrofluoric acid buffer solution, or the like.
- the hydrofluoric acid buffer solution include a mixed solution of an aqueous hydrogen fluoride solution and a weak alkali ammonium fluoride.
- Step (5) the substrate to be processed is dry-etched using the resist underlayer film etched in step (4) as a mask. Dry etching can be performed using a known dry etching apparatus. As the source gas at the time of dry etching, the examples given in the step (4) can be applied.
- the resist underlayer film is removed by plasma ashing.
- plasma ashing generates a plasma of a reactive gas such as oxygen in a gas phase, and decomposes and removes organic substances such as a resist underlayer film into CO x , H 2 O, and the like by this plasma. Means that.
- the plasma ashing conditions are not particularly limited as long as the resist underlayer film can be removed.
- the high-frequency power applied to the susceptor is preferably 100 W to 1,000 W, more preferably 100 W to 500 W.
- the susceptor temperature is preferably 20 ° C. to 100 ° C., more preferably 20 ° C. to 60 ° C.
- the pressure in the processing vessel is preferably 1 mtorr to 300 mtorr, and more preferably 30 mtorr to 100 mtorr.
- the gas used for plasma ashing is not particularly limited as long as the resist underlayer film can be removed.
- nitrogen, hydrogen, ammonia, and A gas containing at least one selected from the group consisting of argon is preferable, and a mixed gas of nitrogen and hydrogen, a mixed gas of ammonia and argon, and a mixed gas of ammonia, nitrogen and hydrogen are more preferable.
- the volume ratio is preferably 20 or less, more preferably 1 to 10, with respect to 100 nitrogen.
- argon is 10 or less with respect to 100 ammonia by a volume ratio.
- the present invention also includes a resist underlayer film formed from the resist underlayer film forming composition. Since the resist underlayer film is formed from the resist underlayer film forming composition, warpage of the substrate to be processed can be suppressed, and the etching resistance and crack resistance are excellent.
- the resist underlayer film preferably has a static contact angle with water of 70 ° or more.
- the static contact angle of the resist underlayer film is 70 ° or more, the hydrophobicity of the resist underlayer film becomes high.
- external stimulation due to an aqueous solution in wet etching or the like after the resist film formation is reduced, and the resist underlayer film The pattern collapse can be further suppressed.
- Tg was determined using a differential scanning calorimeter (DSC204 F1, manufactured by NETZSCH). It was measured. In addition, when Tg was not observed even if it heated up to 200 degreeC, it was set as "> 200 degreeC.”
- reaction solution was cooled to 30 ° C. or lower by water cooling. After cooling, this polymerization solution was put into a large amount of n-heptane. The precipitated polymer was filtered to obtain a polymer (A2-5). Mw of the obtained polymer (A2-5) was 4,000. Tg was> 200 ° C.
- composition for forming resist underlayer film [Preparation of resist underlayer film forming composition (I)] [Example 1] [A1] 20 parts by mass of a polymer (A1-1) as a polymer, [B] diphenyliodonium trifluoromethanesulfonate (hereinafter referred to as “B-1”) which is a thermal acid generator as an acid generator.
- B-1 diphenyliodonium trifluoromethanesulfonate
- C-1 1,3,4,6-tetrakis (methoxymethyl) glycoluril
- D-1 propylene glycol monomethyl ether acetate
- Example 2 and 3 and Comparative Examples 1 and 2 Each composition for forming a resist underlayer film was prepared in the same manner as in Example 1 except that the components of the types and amounts shown in Table 1 were used.
- the solvent (D-2) in Table 1 represents cyclohexanone. “-” Indicates that the corresponding component was not used.
- RF power 200 W; treatment time: 40 seconds; temperature: 15 ° C.).
- the film thickness before and after the etching treatment is measured to calculate the etching rate.
- the etching rate is 150 nm / min or less, “A” (good), and when the etching rate exceeds 150 nm / min and less than 200 nm / min, “B” ”(Somewhat good) and 200 nm / min or more were judged as“ C ”(bad).
- Each prepared resist underlayer film forming composition was applied by spin coating onto a silicon wafer having a diameter of 8 inches, and then heated at 180 ° C. for 60 seconds in a hot plate having an oxygen concentration of 20% by volume, and subsequently 300 ° C. For 60 seconds to form resist underlayer films having a thickness of 0.7 ⁇ m, 1.0 ⁇ m, 1.2 ⁇ m and 1.5 ⁇ m, respectively.
- a solvent used for the spin-on-glass composition solution for a three-layer resist process was applied onto the obtained resist underlayer film by spin coating and heated on a hot plate at 200 ° C. and 300 ° C. for 60 seconds, respectively.
- the substrate after heating is observed with an optical microscope, and “A” (good) indicates that the resist underlayer film is not cracked, and “B” indicates that one or more cracks can be confirmed in the resist underlayer film ( It was judged as bad).
- the resist underlayer film forming composition can form a pattern excellent in dry etching resistance and crack resistance.
- Examples 5 to 33 and Comparative Examples 3 to 8 Except having used each kind and quantity of each component shown in Table 2, it operated similarly to Example 4 and manufactured each composition for resist underlayer film formation.
- the solvent (D-2) in Table 2 represents cyclohexanone. “-” Indicates that the corresponding component was not used.
- Each resist underlayer film forming composition was applied by spin coating on a 12-inch diameter silicon wafer, and then heated at 250 ° C. for 120 seconds in a hot plate to form a resist underlayer film having a thickness of 0.3 ⁇ m. .
- the etching rate (nm / min) is shown in Table 2. It is considered that the lower the etching rate, the higher the etching resistance.
- the present invention forms a resist underlayer film excellent in dry etching resistance and crack resistance suitable for a multilayer resist process including a process of removing an intermediate film such as an inorganic film by dry etching, which suppresses warpage of a substrate to be processed.
- a resist underlayer film forming composition suitable for transferring a pattern having a deep processing depth in a dry etching process of a substrate to be processed. Therefore, the resist underlayer film forming composition can be suitably used in the manufacture of semiconductor devices and the like that are expected to be further miniaturized in the future.
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Abstract
Description
[A1]Tgが0℃以上180℃以下の重合体(以下、「[A1]重合体」とも称する)を含有するレジスト下層膜形成用組成物である。
[B]酸発生体
をさらに含有することが好ましい。
下記式(1)で表される構造単位(I)、
下記式(2)で表される構造単位(II)、及び
下記式(4)で表される構造単位(IV)からなる群より選択される少なくとも1種の構造単位を含む重合体であることが好ましい。
R9は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR11基又は-COOR12基である。但し、R11は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R12は、炭素数1~20の炭化水素基である。
R10は、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基、又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
n1は、0又は1である。n1が0の場合、n2は1~4の整数である。n1が1の場合、n2は1~6の整数である。n3は、1~4の整数である。但し、n1が0の場合、1≦n2+n3≦4の条件を満たす。n1が1の場合、1≦n2+n3≦6の条件を満たす。また、R9及びR10がそれぞれ複数の場合、複数のR9及びR10はそれぞれ同一でも異なっていてもよい。*は、結合手を示す。)
[A2]Tgが180℃を超える重合体(以下、「[A2]重合体」とも称する)
をさらに含有することが好ましい。
下記式(1)で表される構造単位(I)、
下記式(2)で表される構造単位(II)、
-CH2OH基及び芳香族基を有する構造単位(III)、並びに
下記式(4)で表される構造単位(IV)
からなる群より選択される少なくとも1種の構造単位を含む重合体であることが好ましい。
R9は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR11基又は-COOR12基である。但し、R11は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R12は、炭素数1~20の炭化水素基である。
R10は、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基、又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
n1は、0又は1である。n1が0の場合、n2は1~4の整数である。n1が1の場合、n2は1~6の整数である。n3は、1~4の整数である。但し、n1が0の場合、1≦n2+n3≦4の条件を満たす。n1が1の場合、1≦n2+n3≦6の条件を満たす。また、R9及びR10がそれぞれ複数の場合、複数のR9及びR10はそれぞれ同一でも異なっていてもよい。*は、結合手を示す。)
R13及びR14は、それぞれ独立して、水素原子、ハロゲン原子、炭素数1~6のアルキル基、炭素数1~6のアルコキシ基、炭素数2~10のアルコキシカルボニル基、又は炭素数6~14のアリール基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
R15は、炭素数1~6のアルキル基、炭素数2~10のアシル基、又は炭素数6~14のアリール基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。n4は、0又は1である。)
R16は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR18基又は-COOR19基である。但し、R18は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R19は、炭素数1~20の1価の炭化水素基である。n5は、0~6の整数である。R16が複数の場合、複数のR16は同一でも異なっていてもよい。
R17は、単結合、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。)
[A1]Tgが0℃以上180℃以下である重合体と[A2]Tgが180℃を超える重合体とを混合する工程を有することを特徴とする。
当該レジスト下層膜形成用組成物の製造方法によれば、被加工基板の反りを抑制可能なレジスト下層膜形成用組成物を簡便に製造することができる。
(1)被加工基板上に当該レジスト下層膜形成用組成物を用いてレジスト下層膜を形成する工程、
(2)上記レジスト下層膜表面にシリコン系酸化膜を形成する工程、
(3)上記シリコン系酸化膜表面にレジスト組成物を塗布し、露光、加熱及び現像し、レジストパターンを形成する工程、
(4)上記レジストパターンをマスクとしてシリコン系酸化膜及びレジスト下層膜を順次ドライエッチングする工程、並びに
(5)上記工程(4)においてドライエッチングされたレジスト下層膜をマスクとして被加工基板をドライエッチングする工程
を有する。
本発明のレジスト下層膜形成用組成物は、[A1]Tgが0℃以上180℃以下である重合体を含有する。そのため、上記レジスト下層膜形成用組成物から形成されるレジスト下層膜の膜厚を比較的厚くした場合であっても、加熱に起因するレジスト下層膜の残留応力を小さくすることができ、結果として被加工基板の反りを抑制し、またエッチング耐性及びクラック耐性に優れるレジスト下層膜を形成することができる。従って、当該レジスト下層膜形成用組成物は、レジスト下層膜上に例えば無機膜を形成する工程を含む被加工基板のドライエッチングプロセスにおいてもクラックの発生を抑制しつつ加工深度が深いパターンの転写が可能となる。
[A1]重合体はTgが0℃以上180℃以下である重合体であれば特に限定されないが、上記式(1)で表される構造単位(I)、式(2)で表される構造単位(II)、並びに式(4)で表される構造単位(IV)からなる群より選択される少なくとも1種の構造単位を含む重合体であることが好ましい。[A1]重合体が、上記特定構造単位を含むことで、[A1]重合体のTgを比較的低くすることができる。その結果、[A1]重合体を含有するレジスト下層膜形成用組成物から形成されるレジスト下層膜は、被加工基板の反りをより抑制し、エッチング耐性及びクラック耐性により優れる。また、[A1]重合体は、-CH2OH基及び芳香族基を有する構造単位(III)を含む重合体であることが好ましい。[A1]重合体が、上記構造単位(IV)を含むことで、[A1]重合体の架橋性が向上する。[A1]重合体は、本発明の効果を損なわない限り、構造単位(I)~(IV)以外の構造単位として、後述する構造単位(V)等を含んでいてもよい。なお、[A1]重合体は各構造単位をそれぞれ2種以上含んでいてもよい。以下、各構造単位を詳述する。
構造単位(I)は上記式(1)で表される。上記式(1)中、R1は、水素原子、フッ素原子、メチル基又はトリフルオロメチル基である。R2は、1価の炭化水素基である。
構造単位(II)は上記式(2)で表される。上記式(2)中、R3は、水素原子、フッ素原子、メチル基又はトリフルオロメチル基である。R4は、単結合又は炭素数1~4の鎖状炭化水素基である。R5は、フェニル基、ナフチル基又はアントラニル基である。但し、上記フェニル基、ナフチル基及びアントラニル基が有する水素原子の一部又は全部は、アルキル基で置換されていてもよい。
構造単位(III)は、-CH2OH基及び芳香族基を有する構造単位である。構造単位(III)としては、例えば、下記式(3)で表される構造単位等が挙げられる。
構造単位(IV)は上記式(4)で表される。上記式(4)中、R9は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR11基又は-COOR12基である。但し、R11は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R12は、炭素数1~20の炭化水素基である。
R10は、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基、又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
n1は、0又は1である。n1が0の場合、n2は1~4の整数である。n1が1の場合、n2は1~6の整数である。n3は、1~4の整数である。但し、n1が0の場合、1≦n2+n3≦4の条件を満たす。n1が1の場合、1≦n2+n3≦6の条件を満たす。また、R9及びR10がそれぞれ複数の場合、複数のR9及びR10はそれぞれ同一でも異なっていてもよい。*は、結合手を示す。
エテニル基、プロペニル基、ブテニル基、ペンテニル基、エチニル基、プロピニル基等の1価の不飽和鎖状炭化水素基等が挙げられる。
上記R9で表される-COOR12基としては、例えばメトキシカルボニル基、エトキシカルボニル基、プロポキシカルボニル基、ブトキシカルボニル基等が挙げられる。
上記R10で表される炭素数1~10のアルカンジイル基としては、例えばメタンジイル基、エタンジイル基等が挙げられる。
上記R10で表される炭素数6~14のアリーレン基としては、例えばフェニレン基、ナフチレン基、アントリレン基等が挙げられる。
上記R10で表されるアルキレンエーテル基としては、例えばエチレンエーテル基、プロピレンエーテル基等が挙げられる。なお、アルキレンエーテル基のアルキレン部位の炭素数としては、2~20が好ましい。
[A1]重合体は、例えば所定の各構造単位を与える単量体を、ラジカル重合開始剤を使用し、適当な溶媒中で重合することにより合成できる。又は、所定のフェノール類等の化合物若しくは上記重合により得られた重合体を、アルデヒド類を用いて酸触媒等の存在下で架橋反応させることにより合成できる。上記重合方法としては、単量体及びラジカル開始剤を含有する溶液を、反応溶媒又は単量体を含有する溶液に滴下して重合反応させる方法;単量体を含有する溶液と、ラジカル開始剤を含有する溶液とを各別に、反応溶媒又は単量体を含有する溶液に滴下して重合反応させる方法;各々の単量体を含有する複数種の溶液と、ラジカル開始剤を含有する溶液とを各別に、反応溶媒又は単量体を含有する溶液に滴下して重合反応させる方法等が好ましい。
[A2]重合体は、Tgが180℃を超える重合体である。[A2]重合体としては、Tgが180℃を超える重合体であれば特に限定されないが、上記式(5)で表される構造単位(V)、上記式(6)で表される構造単位(VI)、上記式(7)で表される構造単位(VII)及びフラーレン骨格を有する構造単位(VIII)からなる群より選択される少なくとも1種の構造単位を含む重合体であることが好ましい。[A2]重合体が上記特定構造単位を含むことで、[A2]重合体のTgを比較的高くすることができる。その結果、[A2]重合体を含有するレジスト下層膜形成用組成物から形成されるレジスト下層膜は、エッチング耐性により優れる。なお、[A2]重合体は各構造単位をそれぞれ2種以上含んでいてもよい。以下、各構造単位を詳述する。
構造単位(V)は上記式(5)で表される。上記式(5)中、R13及びR14は、それぞれ独立して水素原子、ハロゲン原子、炭素数1~6のアルキル基、炭素数1~6のアルコキシ基、炭素数2~10のアルコキシカルボニル基、又は炭素数6~14のアリール基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。R15は、炭素数1~6のアルキル基、炭素数2~10のアシル基、又は炭素数6~14のアリール基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。n4は、0又は1である。
上記R13、R14で表される炭素数2~10のアルコキシカルボニル基としては、メトキシカルボニル基、エトキシカルボニル基、プロポキシカルボニル基、ブトキシカルボニル基等が挙げられる。
上記R15で表される炭素数2~10のアシル基としては、アセチル基、プロピオニル基、ブチリル基、イソブチリル基等が挙げられる。
構造単位(VI)は上記式(6)で表される。上記式(6)中、R16は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR18基又は-COOR19基である。但し、R18は、炭素数1~20の1価の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R19は、炭素数1~20の炭化水素基である。n5は、0~6の整数である。R16が複数の場合、複数のR16は同一でも異なっていてもよい。R17は、単結合、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基、又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
構造単位(VII)は上記式(7)で表される。上記式(7)中、R18~R20は、それぞれ独立して単結合又は2価の有機基である。但し、R18~R20が同時に単結合であることはない。
構造単位(VIII)は、フラーレン骨格を有する。構造単位(VIII)としては、フラーレン骨格を有していれば特に限定されない。[A2]重合体における構造単位(VIII)の含有率としては、[A2]重合体を構成する全構造単位に対して、10モル%~100モル%が好ましい。構造単位(VIII)の含有率を上記特定範囲とすることで、[A2]重合体のTgを比較的高くすることができる。
[A2]重合体は、上述の[A1]重合体の合成方法と同様の方法により合成できる。
当該レジスト下層膜形成用組成物は、[B]酸発生体を含有することが好ましい。[B]酸発生体は、露光又は加熱により酸を発生する成分であり、当該レジスト下層膜形成用組成物が、[B]酸発生体を含有することで、[A1]重合体等の架橋反応をより促進させることができる。当該レジスト下層膜形成用組成物における[B]酸発生体の含有形態としては、後述するような化合物の態様(以下、この態様を「[B]酸発生剤」とも称する)でも、重合体の一部として組み込まれた態様でも、これらの両方の態様でもよい。
当該レジスト下層膜形成用組成物は、[C]架橋剤をさらに含有することが好ましい。当該レジスト下層膜形成用組成物が、[C]架橋剤をさらに含有することで、[A1]重合体及び[A2]重合体の架橋反応をより促進させることができる。[C]架橋剤としては、例えば縮合多環骨格を有するエポキシ樹脂、ビフェニル骨格を有するエポキシ樹脂、オキサゾリドン環の骨格を有するエポキシ樹脂、アミン型エポキシ樹脂、アルコキシメチル化されたアミノ基を有する化合物等が挙げられる。上記縮合多環骨格とは、2つ以上の単環がそれぞれの辺を互いに共有して形成される環状炭化水素、又はヘテロ原子を含む環状化合物である。上記単環は、飽和結合からなる環でも、不飽和結合を有する環でもよい。不飽和結合とは、炭素-炭素2重結合、炭素-窒素2重結合及び炭素-炭素3重結合から選ばれる結合である。上記縮合多環骨格としては、例えばナフタレン、フルオレン、ジシクロペンタジエン、アントラセン等が挙げられる。
当該レジスト下層膜形成用組成物は通常、溶媒を含有する。溶媒としては、各成分を溶解又は分散可能であれば特に限定されず、例えばケトン系溶媒、アミド系溶媒、エーテル系溶媒、エステル系溶媒及びその混合溶媒等が挙げられる。これらの溶媒は、単独又は2種以上を併用できる。
ベンゼン、トルエン、キシレン、メシチレン、エチルベンゼン、トリメチルベンゼン、メチルエチルベンゼン、n-プロピルベンゼン、iso-プロピルベンゼン、ジエチルベンゼン、iso-ブチルベンゼン、トリエチルベンゼン、ジ-iso-プロピルベンセン、n-アミルナフタレン等の芳香族炭化水素系溶媒;
ジクロロメタン、クロロホルム、フロン、クロロベンゼン、ジクロロベンゼン等の含ハロゲン溶媒等が挙げられる。
当該レジスト下層膜形成用組成物は、本発明の効果を損なわない範囲で、界面活性剤、促進剤等のその他の任意成分を含有できる。以下、これらの任意成分について詳述する。かかるその他の任意成分は、それぞれを単独で使用してもよく2種以上を併用してもよい。また、その他の任意成分の配合量は、その目的に応じて適宜決定することができる。
界面活性剤は塗布性、ストリエーション等を改良する作用を示す成分である。界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル、ポリオキシエチレンn-オクチルフェニルエーテル、ポリオキシエチレンn-ノニルフェニルエーテル、ポリエチレングリコールジラウレート、ポリエチレングリコールジステアレート等のノニオン系界面活性剤の他、以下商品名として、KP341(信越化学工業製)、ポリフローNo.75、同No.95(以上、共栄社化学製)、エフトップEF301、同EF303、同EF352(以上、トーケムプロダクツ製)、メガファックF171、同F173(以上、大日本インキ化学工業製)、フロラードFC430、同FC431(以上、住友スリーエム製)、アサヒガードAG710、サーフロンS-382、同SC-101、同SC-102、同SC-103、同SC-104、同SC-105、同SC-106(以上、旭硝子製)等が挙げられる。
促進剤は、酸化架橋に必要な脱水素反応を十分に引き起こすための一電子酸化剤等である。一電子酸化剤とは、それ自身が1電子移動を受ける酸化剤をいう。例えば、硝酸セリウム(IV)アンモニウムの場合、セリウムイオン(IV)が一電子を得てセリウムイオン(III)へと変化する。また、ハロゲン等のラジカル性の酸化剤は、一電子を得てアニオンへと転化する。このように、一電子を被酸化物(基質や触媒等)から奪うことにより、被酸化物を酸化する現象を一電子酸化と称し、この時一電子を受け取る成分を一電子酸化剤という。
硝酸セリウム(IV)アンモニウム、酢酸セリウム(IV)、硝酸セリウム(IV)、硫酸セリウム(IV)等のセリウム塩;
四酢酸鉛、酸化鉛(IV)等の鉛化合物;
酸化銀(I)、酸化銀(II)、炭酸銀(Fetizon試薬)等の銀化合物;
過マンガン酸塩、活性二酸化マンガン、マンガン(III)塩等のマンガン化合物;
四酸化オスミウム等のオスミウム化合物;
四酸化ルテニウム等のルテニウム化合物;
VOCl3、VOF3、V2O5、NH4VO3、NaVO3等のバナジウム化合物;
酢酸タリウム(III)、トリフルオロ酢酸タリウム(III)、硝酸タリウム(III)等のタリウム化合物;
酢酸銅(II)、銅(II)トリフルオロメタンスルホネート、銅(II)トリフルオロボレート、塩化銅(II)、酢酸銅(I)等の銅化合物;
塩化鉄(III)、ヘキサシアノ鉄(III)酸カリウム等の鉄化合物;
ビスマス酸ナトリウム等のビスマス化合物;
過酸化ニッケル等のニッケル化合物等が挙げられる。
過酢酸、m-クロロ過安息香酸等の過酸;
過酸化水素、t-ブチルヒドロペルオキシド等のアルキルヒドロキシペルオキシド等のヒドロキシペルオキシド類;
過酸化ジアシル、過酸エステル、過酸ケタール、ペルオキシ二炭酸塩、過酸化ジアルキル、過酸ケトン等が挙げられる。
当該レジスト下層膜形成用組成物は、例えば上記溶媒中で[A1]重合体、必要に応じて[A2]重合体、[B]酸発生体、[C]架橋剤及びその他の任意成分を所定の割合で混合することにより調製できる。溶媒としては、[A1]重合体、必要に応じて含有させる[A2]重合体、[B]酸発生体、[C]架橋剤及びその他の任意成分を溶解又は分散可能であれば特に限定されない。当該レジスト下層膜形成用組成物は通常、その使用に際して溶媒に溶解した後、例えば孔径0.1μm程度のフィルターでろ過することによって、調製される。
[A1]重合体及び[A2]重合体を含有するレジスト下層膜形成用組成物(II)は、例えば上記溶媒中で[A1]重合体と[A2]重合体とを、必要に応じて[B]酸発生体、[C]架橋剤及びその他の任意成分と共に所定の割合で混合する工程により製造することができる。当該レジスト下層膜形成用組成物の製造方法によれば、被加工基板の反りを抑制可能で、かつレジスト下層膜のエッチング耐性が向上したレジスト下層膜形成用組成物を簡便に製造することができる。
本発明のパターン形成方法は、
(1)被加工基板上に当該レジスト下層膜形成用組成物を用いてレジスト下層膜を形成する工程、
(2)上記レジスト下層膜表面にシリコン系酸化膜を形成する工程、
(3)上記シリコン系酸化膜表面にレジスト組成物を塗布し、露光、加熱及び現像し、レジストパターンを形成する工程、
(4)上記レジストパターンをマスクとしてシリコン系酸化膜及びレジスト下層膜を順次ドライエッチングする工程、並びに
(5)上記工程(4)においてドライエッチングされたレジスト下層膜をマスクとして被加工基板をドライエッチングする工程
を有する。以下、各工程を詳述する。
本工程は、被加工基板上にレジスト下層膜形成用組成物を用いてレジスト下層膜を形成する。上記被加工基板としては、例えば酸化シリコン、窒化シリコン、酸窒化シリコン、ポリシロキサン等の絶縁膜、並びに市販品であるブラックダイヤモンド(AMAT製)、シルク(ダウケミカル製)、LKD5109(JSR製)等の低誘電体絶縁膜で被覆したウェハ等の層間絶縁膜などが挙げられる。また、この被加工基板としては、配線講(トレンチ)、プラグ溝(ビア)等のパターン化された基板を用いてもよい。当該レジスト下層膜の形成方法としては、例えば被加工基板や他の下層膜(反射防止膜)等の表面に塗布することにより、レジスト下層膜形成用組成物の塗膜を形成し、この塗膜を加熱処理、又は紫外光の照射及び加熱処理を行うことにより硬化させることで形成できる。レジスト下層膜形成用組成物を塗布する方法としては、例えばスピンコート法、ロールコート法、ディップ法等が挙げられる。また、加熱温度しては、通常150℃~500℃であり、好ましくは180℃~350℃である。加熱時間としては、通常30秒~1,200秒であり、好ましくは45秒~600秒である。当該レジスト下層膜形成用組成物は、[A1]重合体を含有し、そのTgは0℃以上180℃以下であることを特徴とするため、レジスト下層膜の膜厚を比較的厚くした場合であっても、加熱に起因するレジスト下層膜の残留応力を小さくすることができ、結果として被加工基板の反りを抑制しつつエッチング耐性及びクラック耐性に優れるレジスト下層膜を形成することができる。
本工程は、上記レジスト下層膜表面にシリコン系酸化膜を形成する。シリコン系酸化膜形成用組成物としては、例えば、NFC SOG508(JSR製)等が挙げられる。シリコン系酸化膜の形成方法は特に限定されないが、例えばスピンコート法、塗布法、CVD法等が挙げられる。また、加熱温度しては、通常150℃~500℃であり、好ましくは180℃~350℃である。加熱時間としては、通常30秒~1200秒であり、好ましくは45秒~600秒である。シリコン系酸化膜の膜厚としては、通常、0.01μm~0.3μmであり、0.02μm~0.1μmが好ましい。
本工程は、上記シリコン系酸化膜表面にレジスト組成物を塗布し、露光、加熱及び現像し、レジストパターンを形成する。上記レジスト組成物としては、例えば光酸発生剤を含有するポジ型又はネガ型の化学増幅型レジスト組成物、アルカリ可溶性樹脂とキノンジアジド系感光剤とからなるポジ型レジスト組成物、アルカリ可溶性樹脂と架橋剤とからなるネガ型レジスト組成物等が挙げられる。なお、本発明のパターン形成方法においては、このようなレジスト組成物として、市販品のレジスト組成物を使用することもできる。レジスト組成物の塗布方法としては、例えばスピンコート法等の従来の方法によって塗布することができる。なお、レジスト組成物を塗布する際には、得られるレジスト膜が所望の膜厚となるように、塗布するレジスト組成物の量を調整する。また、パターンを形成する方法としては、レジスト組成物を用いてパターンを形成する方法以外にも、ナノインプリント法によりパターンを形成する方法、自己組織化を利用してパターンを形成する方法等が挙げられる。
本工程は、上記レジストパターンをマスクとしてシリコン系酸化膜及びレジスト下層膜を順次ドライエッチングする。ドライエッチングは、公知のドライエッチング装置を用いて行うことができる。また、ドライエッチング時のソースガスとしては、被エッチング物の元素組成にもよるが、O2、CO、CO2等の酸素原子を含むガス、He、N2、Ar等の不活性ガス、Cl2、BCl4等の塩素系ガス、CHF3、CF4等のフッ素系ガス、H2、NH3のガス等を使用することができる。なお、これらのガスは混合して用いることもできる。
また、多層レジストプロセスにおいて、レジスト下層膜表面にシリコン系酸化膜を形成している場合には、上記ドライエッチングする工程(4)において、残存するシリコン系酸化膜をエッチングする工程を含むこともできる。エッチングの方法としては、ドライエッチング、ウエットエッチング等を挙げることができるが、ドライエッチングが好ましい。ドライエッチングは、公知のドライエッチング装置を用いて行うことができる。また、ドライエッチング時のソースガスとしては、通常、Cl2、BCl4等の塩素系ガス、CHF3、CF4等のフッ素系ガス、H2、NH3のガス等を使用することができる。なお、これらのガスは混合して用いることもできる。また、ウエットエッチングは、例えばフッ化水素水溶液、フッ化水素酸系緩衝溶液等を用いて行うことができる。フッ化水素酸系緩衝溶液としては、例えばフッ化水素水溶液と、弱アルカリのフッ化アンモニウムとの混合溶液等が挙げられる。
本工程は、上記工程(4)においてエッチングされたレジスト下層膜をマスクとして被加工基板をドライエッチングする。ドライエッチングは、公知のドライエッチング装置を用いて行うことができる。また、ドライエッチング時のソースガスとしては、工程(4)にて挙げた例示が適用できる。
本発明には、当該レジスト下層膜形成用組成物から形成されるレジスト下層膜も含まれる。当該レジスト下層膜は、当該レジスト下層膜形成用組成物から形成されるため、被加工基板の反りを抑制することができ、またエッチング耐性及びクラック耐性に優れる。
[合成例1]
温度計を備えたセパラブルフラスコに、窒素下で構造単位(II)を与える2-ビニルナフタレン70質量部、構造単位(III)を与えるビニルベンジルアルコール30質量部、メチルエチルケトン300質量部、及び2,2-アゾビス(イソ酪酸)ジメチル5質量部を仕込み、80℃で6時間撹拌した。その後、反応溶液を多量のメタノール中に投入し、沈殿した重合体をろ過して、重合体(A1-1)を得た。得られた重合体(A1-1)のMwは13,000であった。Tgは120℃であった。
温度計を備えたセパラブルフラスコに、窒素下で構造単位(II)を与える2-ビニルナフタレン50質量部、構造単位(III)を与えるビニルベンジルアルコール30質量部、アセナフチレン20質量部、メチルエチルケトン300質量部、並びに2,2-アゾビス(イソ酪酸)ジメチル5質量部を仕込み、80℃で6時間撹拌した。その後、反応溶液を多量のメタノール中に投入し、沈殿した重合体をろ過して重合体(A1-2)を得た。得られた重合体(A1-2)のMwは6,000であった。Tgは140℃であった。
温度計を備えたセパラブルフラスコに、窒素下で構造単位(II)を与える2-ビニルナフタレン50質量部、5-ヒドロキシメチルアセナフチレン50質量部、シクロヘキサノン300質量部、及び2,2-アゾビス(イソ酪酸)ジメチル5質量部を仕込み、80℃で6時間撹拌した。その後、反応溶液を多量のメタノール中に投入し、沈殿した重合体をろ過して、重合体(A1-3)を得た。得られた重合体(A1-3)のMwは30,000であった。Tgは150℃であった。
コンデンサー、温度計及び攪拌装置を備えた反応装置にフェノール100質量部、酢酸プロピレングリコールモノメチルエーテル100質量部及びパラホルムアルデヒド50質量部を仕込み、蓚酸2質量部を添加し、脱水しながら120℃に昇温して、5時間反応させた後、下記式で表される構造単位(IV)を有する重合体(A1-4)を得た。得られた重合体(A1-4)のMwは、7,000であった。Tgは、90℃であった。
温度計を備えたセパラブルフラスコに、窒素下で構造単位(I)を与えるアクリル酸n-ブチル15質量部、構造単位(II)を与える2-ビニルナフタレン50質量部、構造単位(III)を与えるビニルベンジルアルコール35質量部、メチルエチルケトン300質量部、及び2,2-アゾビスイソ酪酸ジメチル5質量部を仕込み、80℃で6時間撹拌した。その後、反応溶液を多量のn-ヘプタン中に投入し、沈殿した重合体をろ過して、重合体(A1-5)を得た。得られた重合体(A1-5)のMwは、5,000であった。Tgは、75℃であった。
[合成例6]
温度計を備えたセパラブルフラスコに、窒素下でアセナフチレン100質量部、トルエン78質量部、ジオキサン52質量部及び2,2-アゾビスブチロニトリル3質量部を仕込み、70℃で5時間撹拌した。ここで得られたMwが10,000の重合体に、p-トルエンスルホン酸1水和物5.2質量部、パラホルムアルデヒド40質量部を添加して、120℃に昇温し、更に6時間撹拌した。その後、反応溶液を多量のイソプロパノール中に投入し、沈殿した重合体をろ過して、重合体(A2-1)を得た。得られた重合体(A2-1)のMwは、20,000であった。Tgは、>200℃であった。
コンデンサー、温度計及び撹拌装置を備えた反応装置に2,7-ジヒドロキシナフタレン100質量部、酢酸プロピレングリコールモノメチルエーテル100質量部及びパラホルムアルデヒド50質量部を仕込み、蓚酸2質量部を添加し、脱水しながら120℃に昇温して、5時間反応させた後、下記式で表される構造単位を有する重合体(A2-2)を得た。得られた重合体(A2-2)のMwは、3,000であった。Tgは、>200℃であった。
構造単位(VII)を与えるメタジエチニルベンゼン6.25g及びフェニルアセチレン10.13gをピリジン200mLに溶解した溶液に、溶液を攪拌しつつ室温で、塩化銅(I)6.3gを加えた。その後反応溶液を1時間攪拌した後、生成物を大量の水/イソプロピルアルコールの1対1(質量比)溶液中で再沈した。生成物を水洗した後、トルエンに溶解させた。この溶液を3質量%シュウ酸で2回、水で2回洗浄した後、溶液を減圧濃縮、固化して、重合体(A2-3)を得た。得られた重合体(A2-3)のMwは1,000であった。Tgは>200℃であった。
温度計を備えたセパラブルフラスコに窒素下で構造単位(V)を与えるアセナフチレン60質量部、構造単位(III)を与えるビニルベンジルアルコール40質量部、メチルエチルケトン450質量部、及び2,2-アゾビスブチロニトリル5質量部を仕込み、70℃で5時間撹拌した。その後、反応溶液を多量のイソプロパノール中に投入し、沈殿した重合体をろ過して、重合体(A2-4)を得た。得られた重合体(A2-4)のMwは、10,000であった。Tgは>200℃であった。
温度計を備えたセパラブルフラスコに構造単位(VI)を与える1-ナフトール10質量部、ホルムアルデヒド10質量部、パラトルエンスルホン酸1質量部及びメチルイソブチルケトン30質量部を仕込み、撹拌しつつ50℃で5時間反応させた。ここで得られた1-ナフトール/ホルムアルデヒド縮合物50質量部に対し、プロパルギルブロミド40質量部、ジアザビシクロウンデセン15質量部、及びN-メチルピロリドン15質量部を温度計を備えたセパラブルフラスコに仕込み、50℃で5時間反応させた。反応終了後、反応溶液を水冷により30℃以下に冷却した。冷却後、この重合溶液を多量のn-ヘプタンに投入した。沈殿した重合体をろ過して、重合体(A2-5)を得た。得られた重合体(A2-5)のMwは4,000であった。Tgは>200℃であった。
塩化カルシウム管を取り付けたフラスコに、ジ-μ-ヒドロキソ-ビス[(N,N,N’,N’-テトラメチルエチレンジアミン)銅(II)]クロリド0.46g、及びメタノール138gを仕込み、15分間攪拌を行った。次いで、構造単位(VI)を与える2,3-ジヒドロキシナフタレン3.20gを加え、再び、8時間攪拌を行った。その後、反応溶液に1M塩酸水を加え、攪拌を行った。次いで、沈殿物を回収した後、水で洗浄し、50℃にて17時間乾燥して、重合体(A2-6)を得た。得られた重合体(A2-6)のMwは6,000であった。Tgは>200℃であった。
[レジスト下層膜形成用組成物(I)の調製]
[実施例1]
[A1]重合体としての重合体(A1-1)20質量部、[B]酸発生剤としての熱酸発生剤であるジフェニルヨードニウムトリフルオロメタンスルホネート(以下、「B-1」と称する)0.6質量部及び下記式で表される[C]架橋剤としての1,3,4,6-テトラキス(メトキシメチル)グリコールウリル(以下、「C-1」と称する)2質量部を溶媒としての酢酸プロピレングリコールモノメチルエーテル(以下、「D-1」と称する)77.4質量部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、実施例1のレジスト下層膜形成用組成物を調製した。
表1に示す種類及び量の各成分を使用した以外は実施例1と同様に操作して、各レジスト下層膜形成用組成物を調製した。なお、表1中の溶媒(D-2)は、シクロヘキサノンを示す。また、「-」は該当する成分を使用しなかったことを示す。
上記のように調製したレジスト下層膜形成用組成物について、以下のようにレジスト下層膜を形成し、各種物性を評価した。結果を表1にあわせて示す。
直径8インチのシリコンウェハー上に、調製した各レジスト下層膜形成用組成物をスピンコートで塗布した後、酸素濃度20容量%のホットプレート内にて180℃で60秒間加熱し、引き続き300℃で60秒間加熱して、膜厚0.1μmのレジスト下層膜を形成した。得られたレジスト下層膜と水との静的接触角(°)を、接触角測定装置(DLA10L2E、KRUS製)を用いて測定した。
直径8インチのシリコンウェハー上に、調製した各レジスト下層膜形成用組成物をスピンコートで塗布した後、酸素濃度20容量%のホットプレート内にて180℃で60秒間加熱し、引き続き300℃で60秒間加熱して、膜厚0.5μmのレジスト下層膜を形成した。このレジスト下層膜について、エッチング装置(EXAM、神鋼精機製)を用いて、CF4/Ar/O2(CF4:40mL/min、Ar:20mL/min、O2:5mL/min;圧力:20Pa;RFパワー:200W;処理時間:40秒;温度:15℃)でエッチング処理した。エッチング処理前後の膜厚を測定して、エッチングレートを算出し、エッチングレートが150nm/min以下の場合を「A」(良好)と、150nm/minを超えて200nm/min未満の場合を「B」(やや良好)と、200nm/min以上の場合を「C」(不良)と判断した。
直径8インチのシリコンウェハー上に、調製した各レジスト下層膜形成用組成物をスピンコートで塗布した後、酸素濃度20容量%のホットプレート内にて180℃で60秒間加熱し、引き続き、300℃で60秒間加熱して、膜厚0.7μm、1.0μm、1.2μm及び1.5μmのレジスト下層膜をそれぞれ形成した。得られたレジスト下層膜上に3層レジストプロセス用スピンオングラス組成物溶液に用いられる溶媒をスピンコートで塗布し、200℃及び300℃のホットプレート上でそれぞれ60秒間加熱した。加熱後の基板を光学顕微鏡により観察し、レジスト下層膜にクラックが確認できない状態の場合を「A」(良好)と、レジスト下層膜にクラックが1つ以上確認できる状態の場合を「B」(不良)と判断した。
[実施例4]
[A1]重合体としての重合体(A1-1)3質量部、[A2]重合体としての重合体(A2-1)7質量部、[B]酸発生剤としての熱酸発生剤であるジフェニルヨードニウムトリフルオロメタンスルホネート(以下、「B-1」と称する)0.3質量部及び上記式で表される[C]架橋剤としての1,3,4,6-テトラキス(メトキシメチル)グリコールウリル(以下、「C-1」と称する)1質量部を、溶媒としての酢酸プロピレングリコールモノメチルエーテル(以下、「D-1」と称する)88.7質量部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、レジスト下層膜形成用組成物を製造した。
表2に示す種類及び量の各成分を使用した以外は実施例4と同様に操作して、各レジスト下層膜形成用組成物を製造した。なお、表2中の溶媒(D-2)は、シクロヘキサノンを示す。また、「-」は該当する成分を使用しなかったことを示す。
上記のように製造した各レジスト下層膜形成用組成物を用いてレジスト下層膜を形成し、以下の評価を実施した。結果を表2に合わせて示す。
基板へのレジスト下層膜形成用組成物塗布前におけるウェハーの反り量について、米国FRONTIER SEMICONDUCTOR製のFSM900TC-vacを用いて測定した。なお、各ウェハーの反り量は、ウェハーの中心とエッチの高さの差の平均値から算出した。次に、直径12インチのシリコンウェハー上に、各レジスト下層膜形成用組成物をスピンコートで塗布した後、ホットプレート内にて250℃で120秒間加熱し、膜厚0.3μmのレジスト下層膜を形成した。続いて、レジスト下層膜形成後におけるウェハーの反り量について、上記装置を用いて測定した。レジスト下層膜形成用組成物塗布前とレジスト下層膜形成後におけるウェハーの反り量の差分が10μm以下であれば「A」(良好)と、この差分が10μm以上であれば「B」(不良)と評価した。
直径12インチのシリコンウェハー上に、各レジスト下層膜形成用組成物をスピンコートで塗布した後、ホットプレート内にて250℃で120秒間加熱し、膜厚0.3μmのレジスト下層膜を形成した。得られたレジスト下層膜付きシリコンウェハーをエッチング装置(EXAM、神鋼精機製)を用い、CHF3/Ar/O2(圧力250mTorr、RF=500W)でエッチングを行った。そのエッチングレート(nm/min)を表2に示した。エッチングレートが低いほど、エッチング耐性が高いと考えられる。
Claims (16)
- [A1]Tgが0℃以上180℃以下の重合体
を含有するレジスト下層膜形成用組成物。 - レジスト下層膜表面にシリコン系酸化膜を形成し、このシリコン系酸化膜をドライエッチングする工程を含む多層レジストプロセスに用いる請求項1に記載のレジスト下層膜形成用組成物。
- [B]酸発生体
をさらに含有する請求項2に記載のレジスト下層膜形成用組成物。 - [A1]重合体が、
下記式(1)で表される構造単位(I)、
下記式(2)で表される構造単位(II)、及び
下記式(4)で表される構造単位(IV)
からなる群より選択される少なくとも1種の構造単位を含む重合体である請求項2又は請求項3に記載のレジスト下層膜形成用組成物。
R9は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR11基又は-COOR12基である。但し、R11は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R12は、炭素数1~20の炭化水素基である。
R10は、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基、又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
n1は、0又は1である。n1が0の場合、n2は1~4の整数である。n1が1の場合、n2は1~6の整数である。n3は、1~4の整数である。但し、n1が0の場合、1≦n2+n3≦4の条件を満たす。n1が1の場合、1≦n2+n3≦6の条件を満たす。また、R9及びR10がそれぞれ複数の場合、複数のR9及びR10はそれぞれ同一でも異なっていてもよい。*は、結合手を示す。) - [A1]重合体が、
-CH2OH基及び芳香族基を有する構造単位(III)を含む重合体である請求項2又は請求項3に記載のレジスト下層膜形成用組成物。 - [A2]Tgが180℃を超える重合体
をさらに含有する請求項1に記載のレジスト下層膜形成用組成物。 - [A2]重合体の含有量が、[A1]重合体と[A2]重合体との合計100質量部に対して、10質量部以上40質量部以下である請求項6に記載のレジスト下層膜形成用組成物。
- [A1]重合体のTgが、70℃以上150℃以下である請求項6又は請求項7に記載のレジスト下層膜形成用組成物。
- [A2]重合体のTgが、200℃以上である請求項6又は請求項7に記載のレジスト下層膜形成用組成物。
- [A1]重合体が、
下記式(1)で表される構造単位(I)、
下記式(2)で表される構造単位(II)、
-CH2OH基及び芳香族基を有する構造単位(III)、並びに
下記式(4)で表される構造単位(IV)
からなる群より選択される少なくとも1種の構造単位を含む重合体である請求項6又は請求項7に記載のレジスト下層膜形成用組成物。
R9は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR11基又は-COOR12基である。但し、R11は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R12は、炭素数1~20の炭化水素基である。
R10は、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基、又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
n1は、0又は1である。n1が0の場合、n2は1~4の整数である。n1が1の場合、n2は1~6の整数である。n3は、1~4の整数である。但し、n1が0の場合、1≦n2+n3≦4の条件を満たす。n1が1の場合、1≦n2+n3≦6の条件を満たす。また、R9及びR10がそれぞれ複数の場合、複数のR9及びR10はそれぞれ同一でも異なっていてもよい。*は、結合手を示す。) - [A2]重合体が、下記式(5)で表される構造単位(V)、下記式(6)で表される構造単位(VI)、下記式(7)で表される構造単位(VII)及びフラーレン骨格を有する構造単位(VIII)からなる群より選択される少なくとも1種の構造単位を含む重合体である請求項6又は請求項7に記載のレジスト下層膜形成用組成物。
R13及びR14は、それぞれ独立して、水素原子、ハロゲン原子、炭素数1~6のアルキル基、炭素数1~6のアルコキシ基、炭素数2~10のアルコキシカルボニル基、又は炭素数6~14のアリール基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。
R15は、炭素数1~6のアルキル基、炭素数2~10のアシル基、又は炭素数6~14のアリール基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。n4は、0又は1である。)
R16は、ヒドロキシ基、メルカプト基、アミノ基、ハロゲン原子、炭素数1~20の炭化水素基、-OR18基又は-COOR19基である。但し、R18は、炭素数1~20の炭化水素基であり、この炭化水素基が有する水素原子の一部又は全部はヒドロキシ基又はエポキシ基で置換されていてもよい。R19は、炭素数1~20の1価の炭化水素基である。n5は、0~6の整数である。R16が複数の場合、複数のR16は同一でも異なっていてもよい。
R17は、単結合、炭素数1~10のアルカンジイル基、炭素数6~14のアリーレン基又はアルキレンエーテル基である。但し、これらの基が有する水素原子の一部又は全部はアルキル基で置換されていてもよい。)
- [B]酸発生体をさらに含有する請求項6又は請求項7に記載のレジスト下層膜形成用組成物。
- [C]架橋剤をさらに含有する請求項6又は請求項7に記載のレジスト下層膜形成用組成物。
- レジスト下層膜形成用組成物の製造方法であって、
[A1]Tgが0℃以上180℃以下である重合体と[A2]Tgが180℃を超える重合体とを混合する工程を有することを特徴とするレジスト下層膜形成用組成物の製造方法。 - (1)被加工基板上に請求項1、請求項2又は請求項6に記載のレジスト下層膜形成用組成物を用いてレジスト下層膜を形成する工程、
(2)上記レジスト下層膜表面にシリコン系酸化膜を形成する工程、
(3)上記シリコン系酸化膜表面にレジスト組成物を塗布し、露光、加熱及び現像し、レジストパターンを形成する工程、
(4)上記レジストパターンをマスクとしてシリコン系酸化膜及びレジスト下層膜を順次ドライエッチングする工程、並びに
(5)上記工程(4)においてドライエッチングされたレジスト下層膜をマスクとして被加工基板をドライエッチングする工程
を有するパターン形成方法。 - 請求項1、請求項2又は請求項6に記載のレジスト下層膜形成用組成物から形成されるレジスト下層膜。
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US20130341304A1 (en) * | 2011-02-28 | 2013-12-26 | Jsr Corporation | Resist underlayer film-forming composition, pattern-forming method and resist underlayer film |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11154638A (ja) * | 1997-11-20 | 1999-06-08 | Toshiba Corp | パターン形成方法 |
JP2000098595A (ja) * | 1998-09-24 | 2000-04-07 | Fuji Photo Film Co Ltd | フォトレジスト用反射防止膜材料組成物 |
JP2000294504A (ja) * | 1999-03-08 | 2000-10-20 | Shipley Co Llc | フォトレジストレリーフイメージの形成方法 |
JP2003057828A (ja) * | 2000-07-12 | 2003-02-28 | Nissan Chem Ind Ltd | リソグラフィー用ギャップフィル材形成組成物 |
JP2004534107A (ja) * | 2001-03-13 | 2004-11-11 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | リトグラフィーに応用するための熱硬化された下部層 |
JP2005241963A (ja) * | 2004-02-26 | 2005-09-08 | Jsr Corp | 反射防止膜形成用組成物および反射防止膜 |
JP2005331951A (ja) * | 2004-05-18 | 2005-12-02 | Rohm & Haas Electronic Materials Llc | オーバーコートされるフォトレジストと共に用いるためのコーティング組成物 |
JP2006285046A (ja) * | 2005-04-01 | 2006-10-19 | Jsr Corp | レジスト下層膜用組成物 |
WO2008047715A1 (fr) * | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un stratifié à quatre couches |
JP2009251130A (ja) * | 2008-04-02 | 2009-10-29 | Jsr Corp | レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法 |
JP2010520930A (ja) * | 2007-02-23 | 2010-06-17 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | リソグラフィー用途のための熱硬化型下層 |
WO2011040340A1 (ja) * | 2009-09-29 | 2011-04-07 | Jsr株式会社 | パターン形成方法及びレジスト下層膜形成用組成物 |
WO2012117948A1 (ja) * | 2011-02-28 | 2012-09-07 | Jsr株式会社 | レジスト下層膜形成用組成物、パターン形成方法及びレジスト下層膜 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS621230A (ja) * | 1985-06-27 | 1987-01-07 | Toshiba Corp | パタ−ン形成方法 |
JPH07114181B2 (ja) * | 1985-12-16 | 1995-12-06 | 株式会社日立製作所 | エツチング方法 |
JPS6316623A (ja) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
DE3810247A1 (de) * | 1987-03-26 | 1988-10-06 | Toshiba Kawasaki Kk | Lichtempfindliche beschichtungsmasse |
JPH05121371A (ja) * | 1991-10-25 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
US6610808B2 (en) | 1999-03-12 | 2003-08-26 | Arch Specialty Chemicals, Inc. | Thermally cured underlayer for lithographic application |
JP2001284209A (ja) | 2000-03-30 | 2001-10-12 | Toshiba Corp | 多層レジストパターン形成方法及び半導体装置の製造方法 |
JP3794991B2 (ja) | 2001-08-08 | 2006-07-12 | 旭化成エポキシ株式会社 | エポキシ樹脂組成物 |
JP2004027184A (ja) * | 2002-05-10 | 2004-01-29 | Ngk Spark Plug Co Ltd | 埋込樹脂組成物及びそれを用いた配線基板 |
TWI317365B (en) * | 2002-07-31 | 2009-11-21 | Jsr Corp | Acenaphthylene derivative, polymer, and antireflection film-forming composition |
JP4179116B2 (ja) * | 2003-09-11 | 2008-11-12 | Jsr株式会社 | 反射防止膜形成組成物及び反射防止膜の製造方法 |
EP1780600B1 (en) * | 2004-07-02 | 2014-02-26 | Nissan Chemical Industries, Ltd. | Lower layer film forming composition for lithography including naphthalene ring having halogen atom |
JP4575220B2 (ja) * | 2005-04-14 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
JP4666166B2 (ja) * | 2005-11-28 | 2011-04-06 | 信越化学工業株式会社 | レジスト下層膜材料及びパターン形成方法 |
TWI414893B (zh) * | 2006-03-14 | 2013-11-11 | Jsr Corp | 底層膜形成用組成物及圖型之形成方法 |
JP4718390B2 (ja) * | 2006-08-01 | 2011-07-06 | 信越化学工業株式会社 | レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法 |
WO2008038544A1 (fr) * | 2006-09-28 | 2008-04-03 | Jsr Corporation | Procédé de formation de film de couche inférieure de résist, composition de film de couche inférieure de résist pour une utilisation dans le procédé, et procédé de formation de motif. |
TWI539238B (zh) * | 2006-11-20 | 2016-06-21 | Jsr股份有限公司 | 光阻下層膜形成用組成物及圖型之形成方法 |
US8334338B2 (en) * | 2007-05-23 | 2012-12-18 | Jsr Corporation | Composition for forming resist lower layer film |
TWI400575B (zh) * | 2008-10-28 | 2013-07-01 | Shinetsu Chemical Co | 光阻劑下層膜形成材料及圖案形成方法 |
JP5842503B2 (ja) * | 2010-09-29 | 2016-01-13 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法 |
JP5485188B2 (ja) * | 2011-01-14 | 2014-05-07 | 信越化学工業株式会社 | レジスト下層膜材料及びこれを用いたパターン形成方法 |
US8513133B2 (en) * | 2011-03-31 | 2013-08-20 | Jsr Corporation | Composition for forming resist underlayer film and method for forming pattern |
US9029069B2 (en) * | 2011-03-31 | 2015-05-12 | Jsr Corporation | Resist underlayer film-forming composition and method for forming pattern |
WO2012147210A1 (ja) * | 2011-04-28 | 2012-11-01 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
JP6160068B2 (ja) * | 2011-12-16 | 2017-07-12 | Jsr株式会社 | レジスト下層膜形成用樹脂組成物、レジスト下層膜、その形成方法及びパターン形成方法 |
-
2012
- 2012-10-02 WO PCT/JP2012/075568 patent/WO2013054702A1/ja active Application Filing
- 2012-10-02 JP JP2013538506A patent/JP6146305B2/ja active Active
- 2012-10-02 KR KR1020147009348A patent/KR101922280B1/ko active IP Right Grant
- 2012-10-11 TW TW101137450A patent/TWI578108B/zh active
-
2014
- 2014-04-10 US US14/249,432 patent/US9607849B2/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11154638A (ja) * | 1997-11-20 | 1999-06-08 | Toshiba Corp | パターン形成方法 |
JP2000098595A (ja) * | 1998-09-24 | 2000-04-07 | Fuji Photo Film Co Ltd | フォトレジスト用反射防止膜材料組成物 |
JP2000294504A (ja) * | 1999-03-08 | 2000-10-20 | Shipley Co Llc | フォトレジストレリーフイメージの形成方法 |
JP2003057828A (ja) * | 2000-07-12 | 2003-02-28 | Nissan Chem Ind Ltd | リソグラフィー用ギャップフィル材形成組成物 |
JP2004534107A (ja) * | 2001-03-13 | 2004-11-11 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | リトグラフィーに応用するための熱硬化された下部層 |
JP2005241963A (ja) * | 2004-02-26 | 2005-09-08 | Jsr Corp | 反射防止膜形成用組成物および反射防止膜 |
JP2005331951A (ja) * | 2004-05-18 | 2005-12-02 | Rohm & Haas Electronic Materials Llc | オーバーコートされるフォトレジストと共に用いるためのコーティング組成物 |
JP2006285046A (ja) * | 2005-04-01 | 2006-10-19 | Jsr Corp | レジスト下層膜用組成物 |
WO2008047715A1 (fr) * | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un stratifié à quatre couches |
JP2010520930A (ja) * | 2007-02-23 | 2010-06-17 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | リソグラフィー用途のための熱硬化型下層 |
JP2009251130A (ja) * | 2008-04-02 | 2009-10-29 | Jsr Corp | レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法 |
WO2011040340A1 (ja) * | 2009-09-29 | 2011-04-07 | Jsr株式会社 | パターン形成方法及びレジスト下層膜形成用組成物 |
WO2012117948A1 (ja) * | 2011-02-28 | 2012-09-07 | Jsr株式会社 | レジスト下層膜形成用組成物、パターン形成方法及びレジスト下層膜 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US20130341304A1 (en) * | 2011-02-28 | 2013-12-26 | Jsr Corporation | Resist underlayer film-forming composition, pattern-forming method and resist underlayer film |
US9170493B2 (en) * | 2011-02-28 | 2015-10-27 | Jsr Corporation | Resist underlayer film-forming composition, pattern-forming method and resist underlayer film |
JP2016133741A (ja) * | 2015-01-21 | 2016-07-25 | 住友ベークライト株式会社 | 感光性樹脂組成物、および電子装置 |
JP2016138945A (ja) * | 2015-01-26 | 2016-08-04 | Jsr株式会社 | 多層レジストプロセス用レジスト下層膜形成組成物及びレジスト下層膜の形成方法 |
TWI679502B (zh) * | 2015-03-03 | 2019-12-11 | 日商Jsr股份有限公司 | 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及圖案化基板的製造方法 |
JP2016161886A (ja) * | 2015-03-04 | 2016-09-05 | Jsr株式会社 | 下層膜形成用組成物、下層膜の形成方法及び自己組織化リソグラフィープロセス |
WO2020162183A1 (ja) * | 2019-02-07 | 2020-08-13 | 三井化学株式会社 | 下層膜形成用材料、レジスト下層膜および積層体 |
CN113365820A (zh) * | 2019-02-07 | 2021-09-07 | 三井化学株式会社 | 下层膜形成用材料、抗蚀剂下层膜及层叠体 |
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JP2022096627A (ja) * | 2020-12-17 | 2022-06-29 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシー | フォトレジスト下層組成物及びパターン形成方法 |
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US9607849B2 (en) | 2017-03-28 |
TW201321901A (zh) | 2013-06-01 |
TWI578108B (zh) | 2017-04-11 |
KR101922280B1 (ko) | 2018-11-26 |
JPWO2013054702A1 (ja) | 2015-03-30 |
US20140220783A1 (en) | 2014-08-07 |
JP6146305B2 (ja) | 2017-06-14 |
KR20140090150A (ko) | 2014-07-16 |
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