WO2009041659A1 - 太陽電池 - Google Patents

太陽電池 Download PDF

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Publication number
WO2009041659A1
WO2009041659A1 PCT/JP2008/067558 JP2008067558W WO2009041659A1 WO 2009041659 A1 WO2009041659 A1 WO 2009041659A1 JP 2008067558 W JP2008067558 W JP 2008067558W WO 2009041659 A1 WO2009041659 A1 WO 2009041659A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
coating film
photoelectric conversion
conversion layer
oxide coating
Prior art date
Application number
PCT/JP2008/067558
Other languages
English (en)
French (fr)
Inventor
Haruo Yago
Naruhiko Aono
Youichi Hosoya
Tadanobu Sato
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to US12/680,441 priority Critical patent/US20100252110A1/en
Priority to EP08834602A priority patent/EP2197040A1/en
Publication of WO2009041659A1 publication Critical patent/WO2009041659A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

　絶縁性の陽極酸化皮膜を有する金属基板上に光電変換層を有する太陽電池であって、前記陽極酸化皮膜の表面粗さが０．５ｎｍ～２μｍであり、かつ、光電変換層に用いられる半導体が、カルコパイライト型材料であり、その禁制帯幅が１．３～１．５ｅＶである、太陽電池。
PCT/JP2008/067558 2007-09-28 2008-09-26 太陽電池 WO2009041659A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/680,441 US20100252110A1 (en) 2007-09-28 2008-09-26 Solar cell
EP08834602A EP2197040A1 (en) 2007-09-28 2008-09-26 Solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-255664 2007-09-28
JP2007255664 2007-09-28
JP2008-088958 2008-03-30
JP2008088958 2008-03-30

Publications (1)

Publication Number Publication Date
WO2009041659A1 true WO2009041659A1 (ja) 2009-04-02

Family

ID=40511539

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067558 WO2009041659A1 (ja) 2007-09-28 2008-09-26 太陽電池

Country Status (4)

Country Link
US (1) US20100252110A1 (ja)
EP (1) EP2197040A1 (ja)
JP (1) JP2009267337A (ja)
WO (1) WO2009041659A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011082295A (ja) * 2009-10-06 2011-04-21 Fujifilm Corp 太陽電池
JP2011165790A (ja) * 2010-02-08 2011-08-25 Fujifilm Corp 太陽電池およびその製造方法
US20110265865A1 (en) * 2010-04-28 2011-11-03 General Electric Company Photovoltaic cells with cadmium telluride intrinsic layer

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US8017861B2 (en) * 2007-09-18 2011-09-13 Solopower, Inc. Substrate preparation for thin film solar cell manufacturing
JP5498221B2 (ja) * 2009-04-08 2014-05-21 富士フイルム株式会社 半導体装置及びそれを用いた太陽電池
DE102009039777A1 (de) * 2009-09-02 2011-03-03 Forschungszentrum Jülich GmbH Verfahren zur Herstellung und Strukturierung einer Zinkoxidschicht und Zinkoxidschicht
JP5480782B2 (ja) * 2010-01-21 2014-04-23 富士フイルム株式会社 太陽電池および太陽電池の製造方法
JP2011159685A (ja) * 2010-01-29 2011-08-18 Fujifilm Corp 太陽電池の製造方法
JP2011159796A (ja) * 2010-02-01 2011-08-18 Fujifilm Corp 絶縁層付基板および薄膜太陽電池
JP5473885B2 (ja) * 2010-02-08 2014-04-16 富士フイルム株式会社 絶縁層付金属基板およびその製造方法、半導体装置およびその製造方法ならびに太陽電池およびその製造方法
JP5312368B2 (ja) * 2010-02-16 2013-10-09 富士フイルム株式会社 金属複合基板およびその製造方法
US8349626B2 (en) * 2010-03-23 2013-01-08 Gtat Corporation Creation of low-relief texture for a photovoltaic cell
KR101091375B1 (ko) * 2010-09-16 2011-12-07 엘지이노텍 주식회사 태양 전지 및 이의 제조 방법
US9356172B2 (en) 2010-09-16 2016-05-31 Lg Innotek Co., Ltd. Solar cell and method for manufacturing same
CN103329316B (zh) 2010-10-29 2016-04-13 尤米科尔公司 基于Si的负极材料
JP2012136749A (ja) * 2010-12-27 2012-07-19 Fujifilm Corp 光反射基板
KR101219835B1 (ko) * 2011-01-25 2013-01-21 엘지이노텍 주식회사 태양전지 및 이의 제조방법
CN103998232A (zh) * 2011-10-24 2014-08-20 信实工业公司 薄膜及其制备工艺
US8822816B2 (en) * 2012-06-27 2014-09-02 International Business Machines Corporation Niobium thin film stress relieving layer for thin-film solar cells
US10315275B2 (en) * 2013-01-24 2019-06-11 Wisconsin Alumni Research Foundation Reducing surface asperities
JP2015061062A (ja) * 2013-09-20 2015-03-30 株式会社東芝 光電変換素子の製造方法
CN104976802A (zh) * 2014-04-11 2015-10-14 太浩科技有限公司 一种太阳光谱选择性吸收涂层及其制备方法
DE112014007192T5 (de) * 2014-12-25 2017-08-24 Olympus Corporation Osteosynthetisches Implantat und Herstellungsverfahren hierfür
JP2016195162A (ja) * 2015-03-31 2016-11-17 株式会社神戸製鋼所 金属基板

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