JP2007123725A - Cis系薄膜太陽電池モジュール及びその製造方法 - Google Patents
Cis系薄膜太陽電池モジュール及びその製造方法 Download PDFInfo
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
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- H02S40/38—Energy storage means, e.g. batteries, structurally associated with PV modules
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Abstract
【解決手段】CIS系薄膜太陽電池モジュール1は、ガラス基板2A上に形成されたCIS系薄膜太陽電池サーキット2に、加熱して架橋したエチレンビニルアセテート(以下、EVAという。)樹脂フィルム3(又はシート)を接着剤として、安価で耐久性のある白板半強化ガラス等からなるカバーガラス4を貼着する。EVA樹脂フィルム3を使用することにより、EVA樹脂の使用量を削減する。前記架橋する際に真空吸引してEVA樹脂フィルムから発生するガス分を吸引し、泡等の発生を防止する。ガラス基板のサーキット設置面と反対面に、大容量の蓄電キャパシタ9を設け、その光発電電力を蓄電する。
【選択図】図1
Description
前記CIS系薄膜太陽電池サーキット2上にガラス基板2Aと同サイズのEVA樹脂フィルム3を載せ、更に、四隅に短冊状に切ったEVA樹脂フィルム3A(図示省略)を載せ、その上にカバーガラス4を載せ、このCIS系薄膜太陽電池サーキット2とカバーガラス4の間に前記EVA樹脂フィルム3及び3Aが挟持された構造体STを真空加熱装置に入れ、真空脱気しつつ、80〜120℃まで加熱(ホットプレート)して前記EVA樹脂フィルムをガラス全面に溶融拡散させた後、徐々に大気に戻し加圧した後、140℃〜150℃の温度で加熱(ホットプレート)して前記EVA樹脂フィルム3及び3Aを架橋する。なお、前記四隅に短冊状に切ったEVA樹脂フィルム3Aを載せる理由は、ガラス基板2Aと同サイズのEVA樹脂フィルム3を載せるだけでは、加圧時に溶融したEVA樹脂が四隅からはみ出して端が薄くなりEVA樹脂層の厚みが一定にならないので、これを補充するたのものである。
2 CIS系薄膜太陽電池サーキット
2’ CIS系薄膜太陽電池デバイス部
2A ガラス基板
2B アルカリバリア層
2C 金属裏面電極層
2D 光吸収層
2E バッファ層
2F 窓層
3 EVA樹脂フィルム(又はシート)
3A 短冊状のEVA樹脂フィルム
4 カバーガラス
5 バックシート
6 ケーブル付き接続箱
7 シール材
8 フレーム
9 蓄電用キャパシタ
ST 構造体
Claims (8)
- ガラス基板上に、アルカリバリア層、金属裏面電極層、光吸収層、バッファ層、窓層の順に積層された複数のCIS系薄膜太陽電池デバイス部が導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(又はサブモジュール)に、加熱して重合反応を起こさせて架橋したエチレンビニルアセテート(以下、EVAという。)樹脂フィルム(又はシート)を接着剤として、白板半強化ガラス等からなるカバーガラスを貼着した構造からなることを特徴とするCIS系薄膜太陽電池モジュール。
- 前記CIS系薄膜太陽電池サーキット(又はサブモジュール)のガラス基板の光入射面と反対面(太陽電池サーキット設置面と反対面)の外周部にバックシートを貼着した構造からなることを特徴とする請求項1に記載のCIS系薄膜太陽電池モジュール。
- 前記ガラス基板の所定箇所にCIS系薄膜太陽電池サーキット面からその反対側の面に貫通する穴を設け、その内壁に導電膜を形成し、前記導電膜はCIS系薄膜太陽電池サーキットとその反対側の面に設置される電子部品と接続することを特徴とする請求項1又は2に記載のCIS系薄膜太陽電池モジュール。
- 前記ガラス基板のCIS系薄膜太陽電池サーキット設置面と反対面に、大容量の蓄電キャパシタを設けたことを特徴とする請求項1、2又は3に記載のCIS系薄膜太陽電池モジュール。
- 前記蓄電キャパシタは、昼間に前記CIS系薄膜太陽電池サーキットの光発電電力を蓄電し、夜間に廉価な夜間電力を蓄電することを特徴とする請求項3に記載のCIS系薄膜太陽電池モジュール。
- ガラス基板上に、アルカリバリア層、金属裏面電極層、光吸収層、バッファ層、窓層の順に積層された複数のCIS系薄膜太陽電池デバイス部が導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(又はサブモジュール)に、加熱して重合反応を起こさせて架橋し、接着剤として作用するエチレンビニルアセテート(以下、EVAという。)樹脂フィルム(又はシート)を介して、白板半強化ガラス等からなるカバーガラスを貼着することを特徴とするCIS系薄膜太陽電池モジュールの製造方法。
- 前記EVA樹脂フィルム(又はシート)を架橋する際に発生するガス分を真空吸引して、泡等の発生を防止することを特徴とする請求項6に記載のCIS系薄膜太陽電池モジュールの製造方法。
- 前記CIS系薄膜太陽電池サーキット上にガラス基板と同サイズのフィルム状のEVA樹脂フィルム(又はシート)を載せ、四隅に短冊状に切ったEVA樹脂フィルム(又はシート)を載せ、その上にカバーガラスを載せ、このCIS系薄膜太陽電池サーキットとカバーガラスの間に前記EVA樹脂フィルム(又はシート)が挟持された構造体を真空加熱装置に入れ、真空脱気しつつ、80〜120℃まで加熱(ホットプレート)して前記EVA樹脂フィルム(又はシート)をガラス全面に溶融拡散させた後、徐々に大気に戻し加圧し、140℃〜150℃の温度で加熱(ホットプレート)して前記EVA樹脂フィルム(又はシート)を架橋することを特徴とする請求項6及び7に記載のCIS系薄膜太陽電池モジュールの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2005316846A JP4918247B2 (ja) | 2005-10-31 | 2005-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
US12/092,094 US7960642B2 (en) | 2005-10-31 | 2006-10-31 | CIS based thin-film photovoltaic module and process for producing the same |
CNA2006800408353A CN101300683A (zh) | 2005-10-31 | 2006-10-31 | Cis系薄膜太阳能电池模块及其制造方法 |
TW095140220A TW200729529A (en) | 2005-10-31 | 2006-10-31 | CIS series thin film solar cell module and the making method |
KR1020087010613A KR101275651B1 (ko) | 2005-10-31 | 2006-10-31 | Cis계 박막 태양 전지 모듈 및 이의 제조방법 |
EP06822707.3A EP1947704B1 (en) | 2005-10-31 | 2006-10-31 | Process for producing a cis-type thin-film solar battery module |
PCT/JP2006/321778 WO2007052671A1 (ja) | 2005-10-31 | 2006-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
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JP2005316846A JP4918247B2 (ja) | 2005-10-31 | 2005-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
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JP4918247B2 JP4918247B2 (ja) | 2012-04-18 |
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US (1) | US7960642B2 (ja) |
EP (1) | EP1947704B1 (ja) |
JP (1) | JP4918247B2 (ja) |
KR (1) | KR101275651B1 (ja) |
CN (1) | CN101300683A (ja) |
TW (1) | TW200729529A (ja) |
WO (1) | WO2007052671A1 (ja) |
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WO2009041659A1 (ja) | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | 太陽電池 |
WO2009041657A1 (ja) | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | 太陽電池用基板および太陽電池 |
WO2009041660A1 (ja) | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | 太陽電池用基板および太陽電池 |
WO2010074276A1 (ja) | 2008-12-26 | 2010-07-01 | 京セラ株式会社 | 光電変換モジュール |
KR101163198B1 (ko) | 2011-03-24 | 2012-07-05 | 한국철강 주식회사 | 복층형 광기전력 모듈 및 그 제조 방법 |
JP2013115438A (ja) * | 2011-11-29 | 2013-06-10 | Lg Innotek Co Ltd | 太陽光発電装置 |
JP2013115294A (ja) * | 2011-11-30 | 2013-06-10 | Kyocera Corp | 太陽電池パネル |
JP2015028993A (ja) * | 2013-07-30 | 2015-02-12 | ソーラーフロンティア株式会社 | 薄膜太陽電池モジュールの製造方法 |
WO2018216718A1 (ja) | 2017-05-23 | 2018-11-29 | Agc株式会社 | 太陽電池用カバーガラス及び太陽電池モジュール |
US11563403B2 (en) | 2017-12-11 | 2023-01-24 | AGC Inc. | Coating material, cover glass, solar cell module and outer wall material for building |
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Also Published As
Publication number | Publication date |
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EP1947704B1 (en) | 2017-01-11 |
TW200729529A (en) | 2007-08-01 |
US20090159112A1 (en) | 2009-06-25 |
WO2007052671A1 (ja) | 2007-05-10 |
JP4918247B2 (ja) | 2012-04-18 |
EP1947704A1 (en) | 2008-07-23 |
KR20080075101A (ko) | 2008-08-14 |
CN101300683A (zh) | 2008-11-05 |
EP1947704A4 (en) | 2015-08-19 |
KR101275651B1 (ko) | 2013-06-14 |
US7960642B2 (en) | 2011-06-14 |
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