WO2008146371A1 - シリコン単結晶引上装置 - Google Patents

シリコン単結晶引上装置 Download PDF

Info

Publication number
WO2008146371A1
WO2008146371A1 PCT/JP2007/060995 JP2007060995W WO2008146371A1 WO 2008146371 A1 WO2008146371 A1 WO 2008146371A1 JP 2007060995 W JP2007060995 W JP 2007060995W WO 2008146371 A1 WO2008146371 A1 WO 2008146371A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
magnetic field
chamber
silicon single
molten silicon
Prior art date
Application number
PCT/JP2007/060995
Other languages
English (en)
French (fr)
Inventor
Jun Furukawa
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to US12/090,031 priority Critical patent/US8795432B2/en
Priority to EP07744408A priority patent/EP2022876A4/en
Priority to PCT/JP2007/060995 priority patent/WO2008146371A1/ja
Priority to CN2007800012505A priority patent/CN101400834B/zh
Priority to KR1020087009678A priority patent/KR101000326B1/ko
Priority to JP2009516108A priority patent/JP5240191B2/ja
Publication of WO2008146371A1 publication Critical patent/WO2008146371A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　シリコン単結晶引上装置であって、シリコン融液を貯溜するルツボと、前記ルツボを加熱するヒータと、前記ルツボを回転／又は昇降させるルツボ駆動機構と、前記ルツボおよびヒータを収容するチャンバと、前記チャンバの外側に設けられて該チャンバに磁場を印加する磁場印加手段とを有し、前記磁場印加手段は、前記チャンバの外周面に沿うように形成され、前記ルツボの中心軸に対し略同心円状の等磁場線を形成可能とされているとともに、シリコン融液の融液面からルツボの底部に向けて磁場強度が一方的に増加又は減少するように磁場を印加可能とすることにより、シリコン融液の不安定な対流を抑制し、シリコン単結晶の酸素濃度およびドーパント濃度の微小な範囲でのばらつきを防止する。
PCT/JP2007/060995 2007-05-30 2007-05-30 シリコン単結晶引上装置 WO2008146371A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US12/090,031 US8795432B2 (en) 2007-05-30 2007-05-30 Apparatus for pulling silicon single crystal
EP07744408A EP2022876A4 (en) 2007-05-30 2007-05-30 APPARATUS FOR TRACING A SILICON MONOCRYSTAL
PCT/JP2007/060995 WO2008146371A1 (ja) 2007-05-30 2007-05-30 シリコン単結晶引上装置
CN2007800012505A CN101400834B (zh) 2007-05-30 2007-05-30 硅单晶提拉装置
KR1020087009678A KR101000326B1 (ko) 2007-05-30 2007-05-30 실리콘 단결정 인상 장치
JP2009516108A JP5240191B2 (ja) 2007-05-30 2007-05-30 シリコン単結晶引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060995 WO2008146371A1 (ja) 2007-05-30 2007-05-30 シリコン単結晶引上装置

Publications (1)

Publication Number Publication Date
WO2008146371A1 true WO2008146371A1 (ja) 2008-12-04

Family

ID=40074654

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060995 WO2008146371A1 (ja) 2007-05-30 2007-05-30 シリコン単結晶引上装置

Country Status (6)

Country Link
US (1) US8795432B2 (ja)
EP (1) EP2022876A4 (ja)
JP (1) JP5240191B2 (ja)
KR (1) KR101000326B1 (ja)
CN (1) CN101400834B (ja)
WO (1) WO2008146371A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
JP4307516B1 (ja) * 2008-11-25 2009-08-05 佑吉 堀岡 結晶成長装置及び結晶成長方法
WO2011076157A1 (de) * 2009-12-21 2011-06-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze
CN102220633B (zh) * 2011-07-15 2012-11-07 西安华晶电子技术股份有限公司 一种半导体级单晶硅生产工艺
US9255343B2 (en) 2013-03-08 2016-02-09 Ut-Battelle, Llc Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal
CN103305905B (zh) * 2013-05-30 2015-08-05 浙江中晶科技股份有限公司 一种变埚比的单晶硅生长方法
JP2016064958A (ja) * 2014-09-25 2016-04-28 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
FR3092656B1 (fr) * 2019-02-07 2021-03-19 Inst Polytechnique Grenoble Creuset froid
JP2023170513A (ja) * 2022-05-19 2023-12-01 株式会社Sumco シリコン単結晶の育成方法、シリコンウェーハの製造方法、および単結晶引き上げ装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09188590A (ja) * 1995-12-29 1997-07-22 Shin Etsu Handotai Co Ltd 単結晶の製造方法および装置
JP2000119095A (ja) * 1998-10-12 2000-04-25 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法およびその製造装置
JP2000247787A (ja) * 1999-02-25 2000-09-12 Toshiba Corp 単結晶の製造方法および製造装置
JP2001158690A (ja) 1999-11-30 2001-06-12 Sumitomo Metal Ind Ltd 高品質シリコン単結晶の製造方法
JP2004051475A (ja) 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP2004315289A (ja) * 2003-04-16 2004-11-11 Shin Etsu Handotai Co Ltd 単結晶の製造方法
WO2006025238A1 (ja) 2004-09-02 2006-03-09 Sumco Corporation 磁場印加式シリコン単結晶の引上げ方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027682A (ja) 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JP2556966B2 (ja) 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
JP2556967Y2 (ja) 1989-07-28 1997-12-08 蛇の目ミシン工業株式会社 ミシン用コントローラ
JP2546736B2 (ja) 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
JP2767074B2 (ja) 1990-07-13 1998-06-18 信越半導体 株式会社 シリコン単結晶の引上方法
JP2694310B2 (ja) 1991-10-02 1997-12-24 三菱マテリアル株式会社 シリコンウェーハの製造方法
JP2688137B2 (ja) 1991-12-04 1997-12-08 信越半導体株式会社 シリコン単結晶の引上げ方法
JP2807594B2 (ja) 1992-03-25 1998-10-08 三菱マテリアル株式会社 単結晶引き上げの印加磁場決定方法
JPH0692776A (ja) 1992-09-07 1994-04-05 Mitsubishi Materials Corp シリコン単結晶引上装置
JP2849537B2 (ja) 1993-09-22 1999-01-20 三菱マテリアル株式会社 単結晶引き上げ方法
JP2940437B2 (ja) 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JPH0920595A (ja) 1995-07-04 1997-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JP3402041B2 (ja) 1995-12-28 2003-04-28 信越半導体株式会社 シリコン単結晶の製造装置
JP3598634B2 (ja) 1996-01-30 2004-12-08 信越半導体株式会社 シリコン単結晶の製造方法
JP3443822B2 (ja) 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
JPH09263491A (ja) 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JPH10120485A (ja) * 1996-10-18 1998-05-12 Mitsubishi Steel Mfg Co Ltd 単結晶製造装置
JPH10279394A (ja) * 1997-03-31 1998-10-20 Sumitomo Sitix Corp 単結晶育成装置及び方法
JPH10279399A (ja) 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶製造方法
JPH11255579A (ja) 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 単結晶引上げ装置
JPH11255578A (ja) 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 単結晶引上げ装置
JPH11268987A (ja) 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
US6077343A (en) 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JP3692812B2 (ja) 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP3601328B2 (ja) 1998-12-14 2004-12-15 信越半導体株式会社 シリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶とシリコンウエーハ
JP2000247788A (ja) 1999-02-26 2000-09-12 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
WO2001057293A1 (en) 2000-01-31 2001-08-09 Shin-Etsu Handotai Co., Ltd. Single crystal growing device and production method of single crystal using the device and single crystal
KR100735902B1 (ko) 2000-02-28 2007-07-04 신에쯔 한도타이 가부시키가이샤 실리콘 단결정의 제조방법 및 실리콘 단결정
JP2001348292A (ja) 2000-05-31 2001-12-18 Shin Etsu Handotai Co Ltd 単結晶成長最高速度を割り出す方法およびそれを用いた高速結晶成長方法
EP1310583B1 (en) 2000-06-30 2008-10-01 Shin-Etsu Handotai Co., Ltd Method for manufacturing of silicon single crystal wafer
WO2002010485A1 (fr) 2000-07-28 2002-02-07 Shin-Etsu Handotai Co.,Ltd. Procede et dispositif pour fabriquer un monocristal de semiconducteur
JP4788029B2 (ja) 2000-08-31 2011-10-05 信越半導体株式会社 半導体単結晶の製造装置及びそれを用いた半導体単結晶の製造方法
JP2002137988A (ja) 2000-10-31 2002-05-14 Super Silicon Kenkyusho:Kk 単結晶引上げ方法
JP3994665B2 (ja) 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
JP3909675B2 (ja) 2001-04-20 2007-04-25 信越半導体株式会社 シリコン単結晶の製造装置及びそれを用いたシリコン単結晶の製造方法
JP2004189559A (ja) 2002-12-12 2004-07-08 Sumitomo Mitsubishi Silicon Corp 単結晶成長方法
KR20050007498A (ko) * 2003-07-08 2005-01-19 주식회사 덕성 굽은 형태의 원형 또는 타원형 초전도 코일을 사용하는수평자계발생용 초전도자석장치
JP2007210865A (ja) * 2006-02-13 2007-08-23 Sumco Corp シリコン単結晶引上装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09188590A (ja) * 1995-12-29 1997-07-22 Shin Etsu Handotai Co Ltd 単結晶の製造方法および装置
JP2000119095A (ja) * 1998-10-12 2000-04-25 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法およびその製造装置
JP2000247787A (ja) * 1999-02-25 2000-09-12 Toshiba Corp 単結晶の製造方法および製造装置
JP2001158690A (ja) 1999-11-30 2001-06-12 Sumitomo Metal Ind Ltd 高品質シリコン単結晶の製造方法
JP2004051475A (ja) 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP2004315289A (ja) * 2003-04-16 2004-11-11 Shin Etsu Handotai Co Ltd 単結晶の製造方法
WO2006025238A1 (ja) 2004-09-02 2006-03-09 Sumco Corporation 磁場印加式シリコン単結晶の引上げ方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2022876A4 *

Also Published As

Publication number Publication date
KR20090012202A (ko) 2009-02-02
US8795432B2 (en) 2014-08-05
EP2022876A1 (en) 2009-02-11
JPWO2008146371A1 (ja) 2010-08-12
US20100170432A1 (en) 2010-07-08
KR101000326B1 (ko) 2010-12-13
JP5240191B2 (ja) 2013-07-17
CN101400834A (zh) 2009-04-01
CN101400834B (zh) 2012-06-27
EP2022876A4 (en) 2010-05-05

Similar Documents

Publication Publication Date Title
WO2008146371A1 (ja) シリコン単結晶引上装置
IN2014DN07279A (ja)
JP2015226782A5 (ja)
EP4252598A3 (en) Cooking vessel with a thermal sensor
WO2011015566A3 (en) Improved stereolithography machine
MX345461B (es) Accionamiento de elementos trituradores rotativos.
WO2014190165A3 (en) Methods for producing low oxygen silicon ingots
WO2013002540A3 (en) Apparatus and method for growing silicon carbide single crystal
WO2011037343A3 (ko) 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치
NZ702432A (en) Starting a smelting process
MX2014000586A (es) Columna de burbujas rodantes de sal fundida, reactores que utilizan la misma y metodos relacionados.
WO2013110926A3 (en) Power generating apparatus
SG11201910063VA (en) Quartz glass crucible and manufacturing method thereof
JP2010059031A (ja) 酸化アルミニウム単結晶、及び、その製造方法
WO2010110615A3 (en) Source supplying unit, method for supplying source, and thin film depositing apparatus
WO2010058980A3 (en) Single crystal growing apparatus
MY168651A (en) Single crystal pulling apparatus and low heat conductive member used for single crystal pulling apparatus
MX2020014285A (es) Un horno, así como también un método para agitar alimentos contenidos en un recipiente dispuesto en la cavidad de cocción de tal horno.
CN203469925U (zh) 涂料搅拌罐
EA201390127A1 (ru) Способ легирования полупроводникового материала
CN204017833U (zh) 一种加工热熔胶使用的电磁加热反应釜
CN204522842U (zh) 一种新型加热搅拌桶
WO2012016422A8 (zh) 保温桶及具有该保温桶的立式热处理装置
CN104635792B (zh) 基于主动温度梯度法控制表面张力驱动对流的方法
CN202626013U (zh) 料盆

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780001250.5

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2007744408

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12090031

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1020087009678

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07744408

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009516108

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE