WO2013002540A3 - Apparatus and method for growing silicon carbide single crystal - Google Patents

Apparatus and method for growing silicon carbide single crystal Download PDF

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Publication number
WO2013002540A3
WO2013002540A3 PCT/KR2012/005048 KR2012005048W WO2013002540A3 WO 2013002540 A3 WO2013002540 A3 WO 2013002540A3 KR 2012005048 W KR2012005048 W KR 2012005048W WO 2013002540 A3 WO2013002540 A3 WO 2013002540A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
single crystal
growing
carbide single
crucible
Prior art date
Application number
PCT/KR2012/005048
Other languages
French (fr)
Other versions
WO2013002540A2 (en
Inventor
Young Shol Kim
Sun Hyuk Bae
Sung Wan Hong
Original Assignee
Sk Innovation Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Innovation Co.,Ltd. filed Critical Sk Innovation Co.,Ltd.
Priority to JP2014518794A priority Critical patent/JP5979740B2/en
Publication of WO2013002540A2 publication Critical patent/WO2013002540A2/en
Publication of WO2013002540A3 publication Critical patent/WO2013002540A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material.
PCT/KR2012/005048 2011-06-29 2012-06-26 Apparatus and method for growing silicon carbide single crystal WO2013002540A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014518794A JP5979740B2 (en) 2011-06-29 2012-06-26 Silicon carbide single crystal growth apparatus and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110063656A KR20130007109A (en) 2011-06-29 2011-06-29 Reactor and method for growing silicon carbide single crystal
KR10-2011-0063656 2011-06-29

Publications (2)

Publication Number Publication Date
WO2013002540A2 WO2013002540A2 (en) 2013-01-03
WO2013002540A3 true WO2013002540A3 (en) 2013-04-11

Family

ID=47424654

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005048 WO2013002540A2 (en) 2011-06-29 2012-06-26 Apparatus and method for growing silicon carbide single crystal

Country Status (3)

Country Link
JP (1) JP5979740B2 (en)
KR (1) KR20130007109A (en)
WO (1) WO2013002540A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101636435B1 (en) * 2014-10-22 2016-07-06 한국세라믹기술원 Porous graphite crucible and the manufacturing method of SiC single crystal via solution growth using the same
KR101633183B1 (en) * 2014-10-27 2016-06-24 오씨아이 주식회사 Ingot manufacturing equipment
JP2017119594A (en) * 2015-12-28 2017-07-06 東洋炭素株式会社 PRODUCTION METHOD OF SINGLE CRYSTAL SiC, AND STORAGE CONTAINER
WO2017183747A1 (en) * 2016-04-21 2017-10-26 한국세라믹기술원 Crucible for growing solution and method for growing solution inside crucible
CN105970295B (en) * 2016-06-24 2018-04-10 山东天岳先进材料科技有限公司 A kind of device and method of liquid phase method growth carborundum crystals
KR102103884B1 (en) * 2016-09-30 2020-04-23 주식회사 엘지화학 Manufacturing apparatus for silicon carbide single crystal and manufacturing method of silicon carbide single crystal
KR102088924B1 (en) * 2018-09-06 2020-03-13 에스케이씨 주식회사 Apparatus for growing silicon carbide single crystal ingot
KR102479334B1 (en) * 2018-10-11 2022-12-19 주식회사 엘지화학 Manufacturing apparatus for silicon carbide single crystal and manufacturing method of silicon carbide single crystal
KR102166640B1 (en) * 2018-11-09 2020-10-16 일진디스플레이(주) Jig of the reactor for growing silicon carbide single crystal
CN111676519A (en) * 2020-08-05 2020-09-18 郑红军 Silicon carbide crystal melt growing device
CN114525587B (en) * 2022-04-22 2022-07-19 中电化合物半导体有限公司 Equipment and method for growing silicon carbide single crystal based on PVT method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006347852A (en) * 2005-06-20 2006-12-28 Toyota Motor Corp Method for producing silicon carbide single crystal
JP2008037729A (en) * 2006-08-10 2008-02-21 Shin Etsu Chem Co Ltd Single crystal silicon carbide and method for manufacturing the same
US20080220232A1 (en) * 2004-12-27 2008-09-11 Masashi Nakabayashi Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795893A (en) * 1980-12-03 1982-06-14 Fujitsu Ltd Liquid phase epitaxially growing method
JPH02221187A (en) * 1989-02-20 1990-09-04 Sumitomo Electric Ind Ltd Liquid phase epitaxy
JP3893012B2 (en) * 1999-05-22 2007-03-14 独立行政法人科学技術振興機構 CLBO single crystal growth method
JP4561000B2 (en) * 2001-05-31 2010-10-13 住友金属工業株式会社 Method for producing silicon carbide (SiC) single crystal
JP5304600B2 (en) * 2009-11-09 2013-10-02 トヨタ自動車株式会社 SiC single crystal manufacturing apparatus and manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080220232A1 (en) * 2004-12-27 2008-09-11 Masashi Nakabayashi Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same
JP2006347852A (en) * 2005-06-20 2006-12-28 Toyota Motor Corp Method for producing silicon carbide single crystal
JP2008037729A (en) * 2006-08-10 2008-02-21 Shin Etsu Chem Co Ltd Single crystal silicon carbide and method for manufacturing the same

Also Published As

Publication number Publication date
KR20130007109A (en) 2013-01-18
JP5979740B2 (en) 2016-08-31
WO2013002540A2 (en) 2013-01-03
JP2014518195A (en) 2014-07-28

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