WO2011037343A3 - 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 - Google Patents
회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 Download PDFInfo
- Publication number
- WO2011037343A3 WO2011037343A3 PCT/KR2010/006183 KR2010006183W WO2011037343A3 WO 2011037343 A3 WO2011037343 A3 WO 2011037343A3 KR 2010006183 W KR2010006183 W KR 2010006183W WO 2011037343 A3 WO2011037343 A3 WO 2011037343A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- door
- shutting
- opening
- crucible
- polycrystalline silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010800428601A CN102648311A (zh) | 2009-09-24 | 2010-09-10 | 具备旋转型门开闭装置的多晶硅铸锭制造装置 |
JP2012530767A JP5569758B2 (ja) | 2009-09-24 | 2010-09-10 | 回転型ドア開閉装置を備えた多結晶シリコン鋳塊製造装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0090382 | 2009-09-24 | ||
KR1020090090382A KR101217458B1 (ko) | 2009-09-24 | 2009-09-24 | 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011037343A2 WO2011037343A2 (ko) | 2011-03-31 |
WO2011037343A3 true WO2011037343A3 (ko) | 2011-07-14 |
Family
ID=43796339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/006183 WO2011037343A2 (ko) | 2009-09-24 | 2010-09-10 | 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5569758B2 (ko) |
KR (1) | KR101217458B1 (ko) |
CN (1) | CN102648311A (ko) |
WO (1) | WO2011037343A2 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101336748B1 (ko) * | 2011-04-14 | 2013-12-04 | 주식회사 글로실 | 다결정 잉곳 성장장치 |
FR2980489B1 (fr) * | 2011-09-28 | 2014-09-19 | Ecm Technologies | Four de solidification dirigee de cristaux |
KR101308318B1 (ko) * | 2011-11-10 | 2013-09-17 | 주식회사 엘지실트론 | 에피텍셜 반응기 및 에피텍셜 반응기의 써셉터 지지장치 |
US9493357B2 (en) | 2011-11-28 | 2016-11-15 | Sino-American Silicon Products Inc. | Method of fabricating crystalline silicon ingot including nucleation promotion layer |
ITTO20130258A1 (it) * | 2013-03-28 | 2014-09-29 | Saet Spa | Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale |
GB201319671D0 (en) | 2013-11-07 | 2013-12-25 | Ebner Ind Ofenbau | Controlling a temperature of a crucible inside an oven |
KR101837159B1 (ko) | 2015-11-16 | 2018-04-19 | 주식회사 한국열기술 | 개폐장치를 포함하는 용융로 및 그 제어방법 |
FR3081173B1 (fr) * | 2018-05-17 | 2020-05-29 | Ecm Greentech | Four de solidification dirigee de cristaux |
KR102557909B1 (ko) * | 2021-05-31 | 2023-07-21 | (주)지에스엠 | 개폐식 회전판을 구비한 다결정 실리콘 주상정 제조장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003327403A (ja) * | 2002-05-09 | 2003-11-19 | Denso Corp | 水素供給装置 |
KR200411950Y1 (ko) * | 2006-01-09 | 2006-03-21 | 박달재 | 자동개폐도어가 부설된 컴퓨터용 배기팬 |
JP2007332022A (ja) * | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
KR20080068423A (ko) * | 2007-01-19 | 2008-07-23 | 주식회사 글로실 | 태양전지용 다결정 실리콘 주괴 제조 장치 |
KR20090035336A (ko) * | 2007-10-05 | 2009-04-09 | 주식회사 글로실 | 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치 |
JP2009533288A (ja) * | 2006-04-14 | 2009-09-17 | ジョンソンディバーシー・インコーポレーテッド | 計量及び供給用密封装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0446099A (ja) * | 1990-06-12 | 1992-02-17 | Nippon Steel Corp | シリコン単結晶体の引上装置 |
JP3520957B2 (ja) * | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
JP3428624B2 (ja) * | 1998-06-12 | 2003-07-22 | 三菱住友シリコン株式会社 | シリコン単結晶の引上げ方法 |
JP2001163697A (ja) * | 1999-12-10 | 2001-06-19 | Sumitomo Metal Ind Ltd | 単結晶育成後の石英るつぼ回収方法およびcz単結晶育成装置 |
JP4444482B2 (ja) * | 2000-10-31 | 2010-03-31 | 三菱マテリアル株式会社 | 結晶シリコン製造装置 |
JP4444483B2 (ja) * | 2000-10-31 | 2010-03-31 | 三菱マテリアル株式会社 | 結晶シリコン製造装置 |
JP3846285B2 (ja) * | 2001-11-26 | 2006-11-15 | 三菱マテリアル株式会社 | 結晶製造装置及び結晶製造方法 |
KR100861412B1 (ko) * | 2006-06-13 | 2008-10-07 | 조영상 | 다결정 실리콘 잉곳 제조장치 |
CN101165226A (zh) * | 2007-08-23 | 2008-04-23 | 浙江精工科技股份有限公司 | 多晶硅铸锭炉的热场节能增效装置 |
-
2009
- 2009-09-24 KR KR1020090090382A patent/KR101217458B1/ko not_active IP Right Cessation
-
2010
- 2010-09-10 CN CN2010800428601A patent/CN102648311A/zh active Pending
- 2010-09-10 JP JP2012530767A patent/JP5569758B2/ja not_active Expired - Fee Related
- 2010-09-10 WO PCT/KR2010/006183 patent/WO2011037343A2/ko active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003327403A (ja) * | 2002-05-09 | 2003-11-19 | Denso Corp | 水素供給装置 |
KR200411950Y1 (ko) * | 2006-01-09 | 2006-03-21 | 박달재 | 자동개폐도어가 부설된 컴퓨터용 배기팬 |
JP2009533288A (ja) * | 2006-04-14 | 2009-09-17 | ジョンソンディバーシー・インコーポレーテッド | 計量及び供給用密封装置 |
JP2007332022A (ja) * | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
KR20080068423A (ko) * | 2007-01-19 | 2008-07-23 | 주식회사 글로실 | 태양전지용 다결정 실리콘 주괴 제조 장치 |
KR20090035336A (ko) * | 2007-10-05 | 2009-04-09 | 주식회사 글로실 | 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치 |
Also Published As
Publication number | Publication date |
---|---|
WO2011037343A2 (ko) | 2011-03-31 |
JP2013505891A (ja) | 2013-02-21 |
JP5569758B2 (ja) | 2014-08-13 |
KR20110032739A (ko) | 2011-03-30 |
KR101217458B1 (ko) | 2013-01-07 |
CN102648311A (zh) | 2012-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011037343A3 (ko) | 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 | |
CN101319366B (zh) | 多晶硅铸锭炉自动控制***及方法 | |
CN102877117B (zh) | 基于多加热器的铸锭炉热场结构及运行方法 | |
WO2012134092A3 (en) | Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby | |
WO2010053915A3 (en) | Methods for preparing a melt of silicon powder for silicon crystal growth | |
TW200833881A (en) | Semiconductor wafers of silicon and method for their production | |
WO2011136479A3 (ko) | 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 | |
WO2008131075A3 (en) | Large grain, multi-crystalline semiconductor ingot formation method and system | |
RU2010130676A (ru) | Способ и устройство для получения монокристалла сапфира | |
WO2014190165A3 (en) | Methods for producing low oxygen silicon ingots | |
CN101624187A (zh) | 一种多晶硅生长铸锭炉 | |
WO2008095111A3 (en) | Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock | |
WO2012099343A3 (en) | Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire sngle crystal ingot, sapphire sngle crystal ingot, and sapphire wafer | |
CN101323969A (zh) | 多元化合物红外晶体生长方法 | |
TW200643233A (en) | Production process of silicon single crystal | |
CN104131345A (zh) | 一种底部气冷的多晶硅半熔铸锭装置及工艺 | |
TW201129730A (en) | Single crystal pulling apparatus and single crystal pulling method | |
WO2011072278A3 (en) | Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same | |
WO2011060905A3 (en) | Device and method for thermal evaporation of silicon | |
WO2008120435A1 (ja) | 単結晶の成長方法および単結晶の引き上げ装置 | |
CN102242390B (zh) | 铸造法生产类似单晶硅锭化料加热方法 | |
WO2010058980A3 (en) | Single crystal growing apparatus | |
TW200500507A (en) | Process for producing single crystal | |
CN102703973B (zh) | 一种生长氧化锌晶体的方法 | |
WO2010053586A3 (en) | Systems, methods and substrates of monocrystalline germanium crystal growth |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080042860.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10818984 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012530767 Country of ref document: JP |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10818984 Country of ref document: EP Kind code of ref document: A2 |