WO2011037343A3 - 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 - Google Patents

회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 Download PDF

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Publication number
WO2011037343A3
WO2011037343A3 PCT/KR2010/006183 KR2010006183W WO2011037343A3 WO 2011037343 A3 WO2011037343 A3 WO 2011037343A3 KR 2010006183 W KR2010006183 W KR 2010006183W WO 2011037343 A3 WO2011037343 A3 WO 2011037343A3
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WIPO (PCT)
Prior art keywords
door
shutting
opening
crucible
polycrystalline silicon
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PCT/KR2010/006183
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English (en)
French (fr)
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WO2011037343A2 (ko
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김한성
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주식회사 글로실
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Priority to CN2010800428601A priority Critical patent/CN102648311A/zh
Priority to JP2012530767A priority patent/JP5569758B2/ja
Publication of WO2011037343A2 publication Critical patent/WO2011037343A2/ko
Publication of WO2011037343A3 publication Critical patent/WO2011037343A3/ko

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00Unidirectional solidification of eutectic materials
    • C30B21/02Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 진공챔버, 도가니와, 히터와, 써셉터, 냉각판과, 상기 도가니와 냉각판 사이에 구비되어 실리콘 용융 또는 성장시키기 위해 열방출을 구속하는 도어 개폐장치와, 온도센서 및 상기 온도센서의 출력값을 받아 도가니 내의 실리콘의 용융 및 균일한 성장이 이루어지도록 도가니 내의 온도를 제어하는 제어부를 포함하는 다결정 실리콘 주괴 제조장치에 있어서, 상기 도어 개폐장치는 소정간격을 두고 개방부가 형성된 제 1도어와 제 2도어로 구성되고, 상기 제 1도어와 제 2도어 간에 상대회전을 통해 개방부를 선택적으로 개폐하는 구동부를 포함하여 구성된다.
PCT/KR2010/006183 2009-09-24 2010-09-10 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치 WO2011037343A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800428601A CN102648311A (zh) 2009-09-24 2010-09-10 具备旋转型门开闭装置的多晶硅铸锭制造装置
JP2012530767A JP5569758B2 (ja) 2009-09-24 2010-09-10 回転型ドア開閉装置を備えた多結晶シリコン鋳塊製造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0090382 2009-09-24
KR1020090090382A KR101217458B1 (ko) 2009-09-24 2009-09-24 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치

Publications (2)

Publication Number Publication Date
WO2011037343A2 WO2011037343A2 (ko) 2011-03-31
WO2011037343A3 true WO2011037343A3 (ko) 2011-07-14

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PCT/KR2010/006183 WO2011037343A2 (ko) 2009-09-24 2010-09-10 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치

Country Status (4)

Country Link
JP (1) JP5569758B2 (ko)
KR (1) KR101217458B1 (ko)
CN (1) CN102648311A (ko)
WO (1) WO2011037343A2 (ko)

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* Cited by examiner, † Cited by third party
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KR101336748B1 (ko) * 2011-04-14 2013-12-04 주식회사 글로실 다결정 잉곳 성장장치
FR2980489B1 (fr) * 2011-09-28 2014-09-19 Ecm Technologies Four de solidification dirigee de cristaux
KR101308318B1 (ko) * 2011-11-10 2013-09-17 주식회사 엘지실트론 에피텍셜 반응기 및 에피텍셜 반응기의 써셉터 지지장치
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
GB201319671D0 (en) 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
KR101837159B1 (ko) 2015-11-16 2018-04-19 주식회사 한국열기술 개폐장치를 포함하는 용융로 및 그 제어방법
FR3081173B1 (fr) * 2018-05-17 2020-05-29 Ecm Greentech Four de solidification dirigee de cristaux
KR102557909B1 (ko) * 2021-05-31 2023-07-21 (주)지에스엠 개폐식 회전판을 구비한 다결정 실리콘 주상정 제조장치

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JP2003327403A (ja) * 2002-05-09 2003-11-19 Denso Corp 水素供給装置
KR200411950Y1 (ko) * 2006-01-09 2006-03-21 박달재 자동개폐도어가 부설된 컴퓨터용 배기팬
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Also Published As

Publication number Publication date
WO2011037343A2 (ko) 2011-03-31
JP2013505891A (ja) 2013-02-21
JP5569758B2 (ja) 2014-08-13
KR20110032739A (ko) 2011-03-30
KR101217458B1 (ko) 2013-01-07
CN102648311A (zh) 2012-08-22

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