WO2006123643A1 - Matériau pour la formation d’une pellicule protectrice pour un processus d’exposition par immersion et procédé de formation d’un motif photorésistant utilisant ce matériau - Google Patents

Matériau pour la formation d’une pellicule protectrice pour un processus d’exposition par immersion et procédé de formation d’un motif photorésistant utilisant ce matériau Download PDF

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Publication number
WO2006123643A1
WO2006123643A1 PCT/JP2006/309718 JP2006309718W WO2006123643A1 WO 2006123643 A1 WO2006123643 A1 WO 2006123643A1 JP 2006309718 W JP2006309718 W JP 2006309718W WO 2006123643 A1 WO2006123643 A1 WO 2006123643A1
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WO
WIPO (PCT)
Prior art keywords
protective film
photoresist
immersion exposure
exposure process
film
Prior art date
Application number
PCT/JP2006/309718
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English (en)
Japanese (ja)
Inventor
Masaaki Yoshida
Keita Ishiduka
Tomoyuki Hirano
Tomoyuki Ando
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005144270A external-priority patent/JP2006323002A/ja
Priority claimed from JP2005344644A external-priority patent/JP2007148167A/ja
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Publication of WO2006123643A1 publication Critical patent/WO2006123643A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Definitions

  • the present invention relates to a protective film forming material applied to a liquid immersion lithography process and a photoresist pattern forming method using the same.
  • the present invention is suitably applied to a local exposure liquid immersion process in which only a space between a lens of an exposure apparatus and a substrate having a protective film formed on a photoresist layer is filled with an immersion medium.
  • Measures such as shortening the wavelength of the light source and increasing the numerical aperture (NA) of the lens.
  • Measures using photoresist materials include measures to develop new materials that can cope with shorter exposure light wavelengths.
  • an exposure optical path between an exposure apparatus (lens) and a photoresist film on a substrate exposes the photoresist film by interposing an immersion medium having a predetermined thickness on at least the photoresist film.
  • a pattern is formed.
  • an exposure optical path space which has conventionally been an inert gas such as air or nitrogen, has a refractive index (that is larger than the refractive index of these spaces (gas) and smaller than the refractive index of the photoresist film ( By substituting with an immersion medium with n) (e.g.
  • the above Patent Document 1 is a technique proposed by the applicant of the present application.
  • the protective film includes a fluorine-containing resin, specifically, a cyclic perfluoroalkyl polyether and a chain perfluoroalkyl polyether.
  • a protective film was formed using a mixture of a mixture of grease, and it was confirmed that a good profile photoresist pattern with a rectangular cross-section was obtained by this protective film.
  • Non-Patent Document 1 “Journal of Vacuum Science & Technology B” J, (USA), 1999, Vol. 17, No. 6, 330 6 — Page 3309
  • Non-Patent Document 2 “Journal of Vacuum Science & Technology B” J, (USA), 2001, Vol. 19, No. 6, pp. 235 3-2356
  • Non-Patent Document 3 “Proceedings of SPIE”.
  • Patent Document 1 International Publication No. 2004Z074937 Pamphlet
  • the protective film described in Patent Document 1 described above is a simulated immersion exposure dew experiment in a state where a substrate having a protective film formed on a photoresist film is exposed and then immersed in an immersion medium.
  • the evaluation was performed by immersion exposure using a simple method using a prism, and the evaluation of such an immersion exposure process was sufficiently effective.
  • a local immersion exposure method has been adopted in which only the space between the exposure lens that scans at a predetermined speed or more and the substrate is filled with an immersion medium.
  • a substrate provided with a protective film Z photoresist layer is placed on a wafer stage, an exposure lens is arranged above the protective film at a predetermined interval, and a wafer stage.
  • the immersion medium is continuously dropped onto one nozzle force protective film while being moved at a high speed, and exposure is performed while suctioning from the other nozzle.
  • Patent Document 1 the above-described conventional evaluation method is used, and such a conventional immersion exposure method can provide a photoresist pattern with a good profile and has an excellent effect.
  • Predetermined speed The above points in the local immersion exposure using the scanning lens have not been studied.
  • one object of the present invention is to solve the above-mentioned new problems, and in particular to suppress the occurrence of photoresist pattern defects ("water one 'mark defects") due to local immersion, etc.
  • a material for forming a protective film that is widely applicable to commercially available photoresists, has excellent versatility, and has the basic characteristics required for a protective film used in an immersion exposure process.
  • the object is to provide a method for forming a photoresist pattern.
  • another object of the present invention is to provide a protective film forming material that further reduces manufacturing costs and improves product throughput, and a photoresist pattern forming method using the same. Is to provide.
  • the present inventors have made the surface of the protective film more uniform, reduced the contact angle between the water droplet and the protective film, and improved the water repellency of the protective film. As a result of the improvement, the inventors have obtained knowledge that the above problems can be solved, thereby completing the present invention. Furthermore, by using a protective film containing a specific low molecular weight polymer, it is highly soluble in a protective film removal liquid such as a fluorine-based organic solvent that does not impair the characteristics of the protective film. The inventor has obtained the knowledge that the cost can be reduced and the product throughput can be improved, thereby completing the present invention.
  • the present invention is a material for forming a protective film that is used in an immersion exposure process and is stacked on a photoresist film on a substrate, and includes a cyclic fluoroalkyl polyether and a fluorine-based material.
  • a material for forming a protective film for an immersion exposure process containing an organic solvent is provided.
  • the present invention is a photoresist pattern forming method using an immersion exposure process, wherein a photoresist film is provided on a substrate, and the protective film is formed on the photoresist film using the protective film forming material. Thereafter, an immersion medium is disposed on at least the protective film of the substrate, and the photoresist film is selectively exposed by an exposure apparatus through the immersion medium and the protective film, and then the protective film is removed from the photoresist film. Then, the photoresist film is developed, and a photoresist pattern is obtained by developing the photoresist film.
  • the immersion exposure process uses an immersion medium only between the lens of the exposure apparatus and the substrate on which the protective film is formed on the photoresist layer. It is preferably applied to the local immersion exposure process to be filled.
  • the material for forming a protective film of the present invention can achieve further uniformization of the surface of the protective film, and can improve water repellency characteristics between the fine water droplets and the protective film. In particular, it is possible to suppress the occurrence of photoresist pattern defects (“water mark defects”) that are likely to occur in the local immersion exposure process.
  • water mark defects photoresist pattern defects
  • the material for forming a protective film of the present invention further reduces the amount of the protective film removal liquid used for removing the protective film from the photoresist film after the immersion exposure step.
  • the manufacturing cost can be reduced and the product throughput can be improved.
  • the present invention is widely applicable to photoresists currently on the market and is versatile.
  • the present invention is a basic property required as a protective film, and has high resistance to an immersion medium. Low compatibility with the photoresist film provided in the lower layer, immersion medium force Prevention of elution of components into the photoresist film, prevention of elution of components from the photoresist film into the immersion medium, inhibition of gas permeation of the protective film A material for forming a protective film having the above characteristics is provided.
  • fluoroalkyl group refers to a group in which part to all of the hydrogen atoms of the alkyl group are substituted with fluorine atoms.
  • a group in which all of the hydrogen atoms of the alkyl group are substituted with fluorine atoms is also referred to as a perfluoroalkyl group.
  • the "fluoroalkyl ether group” refers to a group in which part to all of the hydrogen atoms of the alkyl ether group are substituted with fluorine atoms.
  • a group in which all of the hydrogen atoms of the alkyl ether group are substituted with fluorine atoms is also referred to as a perfluoroalkyl ether group.
  • the material for forming a protective film according to the present invention contains a cyclic fluoroalkyl polyether and a fluorine-based organic solvent. In the present invention, a chain-type fluoroalkyl polyether is not contained.
  • cyclic fluoroalkyl polyether a polymer having a structural unit represented by the following formula (I) is preferably used.
  • Rf represents a fluorine atom, a fluoroalkyl group having 1 to 5 carbon atoms, or
  • a fluoroalkyl ether group, Rf may or may not be present
  • Y is — O— or — (CF) ⁇ (where V represents a number of 1 or more), and Z
  • the polymer having the structural unit represented by the formula (II) is a Cytop series (Asahi Glass Co., Ltd.). C which is commercially available as Ltd.) and the like, can be suitably used
  • Rf represents a fluorine atom, a fluoroalkyl group having 1 to 5 carbon atoms or a fluorine atom.
  • Fluoroalkyl ether group, Rf may or may not be present
  • the case (which may be present in plural) is a fluoroalkyl group or a fluoroalkyl ether group having 1 to 5 carbon atoms, t is a number from 0 to 3, and m is a repeating unit.
  • the polymer having the structural unit represented by the formula (III) is commercially available as "Teflon AF1600", “Teflon A F2400J (all of which are manufactured by DuPont)" and can be suitably used.
  • a cyclic fluoroalkyl polyether having a mass average molecular weight (MW) of a low molecular weight in the range of 5,000 to 200,000 is used.
  • the protective film using the low molecular weight polymer exhibits extremely high solubility in the protective film removing liquid such as a fluorine-based organic solvent, a small amount of the protective film removing liquid is used and the thickness of the protective film is short.
  • the protective film can be removed in time, and the protective film characteristics are not impaired at all, thereby reducing the manufacturing cost and improving the product throughput.
  • m is within the range where Mw of the polymer satisfies 5,000-200,000.
  • Such a low molecular weight polymer is commercially available as “Cytop” series (manufactured by Asahi Glass Co., Ltd.) as a polymer having a structural unit represented by the above formula (II)! This is not limited to the force that can be used for a low molecular weight product.
  • Examples of the polymer having the structural unit represented by the above formula (II I) include low molecular weight polymers such as “Teflon AF1600”, “Teflon AF 2400” (all of which are manufactured by DuPont). ⁇ The power that can be used is not limited to this.
  • the present invention it is preferable to use only one type of polymer as the cyclic fluoroalkyl polyether, even though the above! In this way, with a protective film using a single kind of cyclic fluoroalkyl polyether, the surface of the protective film becomes even more uniform, and the penetration of droplets into the protective film is more effectively suppressed. As a result, water mark defects generated in the photoresist pattern can be more effectively suppressed.
  • the fluorinated organic solvent is not particularly limited as long as it can dissolve the cyclic fluoroalkylpolyether used in the present invention.
  • perfluoroalkanes such as perfluorinated hexane and perfluoroheptane or perfluorocycloalkanes, perfluoroalkenes in which some of the double bonds remain, and perfluoroalkanes.
  • perfluoro cyclic ethers such as tetrahydrofuran and perfluoro (2-butyltetrahydrofuran), and fluorine-based organic solvents such as perfluorotributylamine, perfluorotetrapentylamine, and perfluorotetrahexylamine. These may be used alone or in admixture of two or more. It is also possible to improve solubility by adding other compatible organic solvents or surfactants as additives.
  • the protective film-forming material in which the cyclic fluoroalkyl polyether is dissolved in a fluorine-based organic solvent includes a preservative, a stabilizer, and a surfactant as long as the effects of the present invention are not impaired. You may mix various additives such as ⁇ .
  • the protective film-forming material of the present invention can be produced by a conventional method.
  • the material for forming a protective film of the present invention is used in an immersion exposure process, and is particularly preferably used for local immersion exposure.
  • the refractive index of the photoresist film provided on the substrate is larger than the refractive index of air and smaller than the refractive index of the photoresist film on at least the photoresist film in the path through which the exposure light reaches the photoresist film.
  • a method for improving the resolution of a photoresist pattern by exposing a photoresist film in a state where a liquid (immersion medium) having a predetermined thickness having a refractive index is interposed.
  • the immersion medium water (pure water, deionized water, etc.), a fluorinated solvent, or the like is preferably used. Above all, water is regarded as the most preferable because of optical requirements for immersion exposure (good refractive index characteristics, etc.), ease of handling, and lack of environmental pollution.
  • the protective film-forming material according to the present invention can be directly formed on the photoresist film, and does not hinder non-turn exposure.
  • it since it is insoluble in water, it is possible to obtain a photoresist pattern with good characteristics by using water as an immersion medium and sufficiently protecting photoresist films of various compositions during the immersion exposure process. it can.
  • exposure light with a wavelength of 157 nm such as F excimer laser
  • the absorption of exposure light into the immersion medium is reduced.
  • fluorinated media are considered to be promising as immersion media, but even when such a fluorinated solvent is used, a photoresist film is used in the immersion exposure process as in the case of the water described above. While being provided, it is possible to obtain a photoresist pattern with sufficient protection and good characteristics.
  • An immersion exposure method using the material for forming a protective film of the present invention, in particular, a photoresist pattern formation method by a local immersion exposure method is performed as follows, for example.
  • a conventional photoresist composition is applied onto a substrate such as a silicon wafer with a spinner or the like, and then pre-beta (PAB treatment) to form a photoresist film.
  • PAB treatment pre-beta
  • a photoresist film may be formed after an organic or inorganic antireflection film (lower antireflection film) is provided on the substrate.
  • the photoresist composition is not particularly limited, and any photoresist that can be developed with an aqueous alkaline solution, including negative and positive photoresists, can be used.
  • photoresists include: (i) a positive photoresist containing naphthoquinone diazide compound and novolac resin; (ii) a compound that generates an acid upon exposure; (Iii) A compound that generates an acid upon exposure, an alkali-soluble resin having a group that decomposes with an acid and increases the solubility in an alkaline aqueous solution. And (iv) a force that includes a compound that generates an acid or radical by light, a negative photoresist that contains a crosslinking agent and an alkali-soluble resin, and the like.
  • the protective film-forming material according to the present invention is uniformly applied to the surface of the photoresist film, the protective film is formed by curing by heating or the like.
  • the substrate on which the photoresist film and the protective film are laminated is placed on a wafer stage for local immersion exposure.
  • An exposure apparatus (lens) is disposed above the protective film with a predetermined distance from the protective film.
  • the photoresist layer is selectively exposed through the protective film while continuously dropping the immersion medium onto the nozzle force protective film while moving the wafer stage at a high speed.
  • the immersion medium is dropped on the protective film and moves at a predetermined speed or higher, so that very fine water droplets are scattered on the surface of the protective film.
  • the surface of the protective film is more uniform than in the case of the mixed resin with the chain fluoroalkyl polyether. (Uniformity of water repellency, etc.) could be achieved, and the contact angle between the protective film and the droplet could be reduced. [0060] This will be described below.
  • Equation 1 it is known that the stress (difference between internal pressure and external pressure) applied to a microdroplet is proportional to the surface tension of the droplet and inversely proportional to its sphere radius! / Speak.
  • Equation 1 P represents the internal pressure of the droplet (unit: Pa), P represents the external pressure of the droplet (unit: Pa), y represents the surface tension of the droplet (unit: NZm 2 ), r Indicates the sphere radius (unit: m). ]
  • the spherical radius (r) of the droplet is determined by the amount of the droplet and the contact angle with the material (protective film) that comes into contact with the liquid.
  • the contact angle is high, the internal pressure (P) of the droplet increases. Therefore, in order to reduce the internal pressure, it is required to reduce the contact angle.
  • the protective film Z photoresist film on the substrate in the continuous dropping state is selectively exposed through a mask pattern. Therefore, at this time, the exposure light passes through the immersion medium and the protective film and reaches the photoresist film.
  • the photoresist film is shielded from the immersion medium by the protective film, and is subjected to alteration such as swelling due to the invasion of the immersion medium, or conversely, the components are eluted in the immersion medium.
  • alteration of optical characteristics such as the refractive index of the immersion medium itself is prevented.
  • the protective film maintains uniformity as described above, and also has a low contact angle and high water repellency, so that the dropped microdroplet does not remain on the upper surface of the protective film. Also, it does not penetrate inward from the interface with the photoresist on the periphery.
  • the exposure light is not particularly limited, and can be performed using radiation generally used in the field of photolithography, such as ArF excimer laser, KrF excimer laser, and VUV (vacuum ultraviolet).
  • the immersion medium is not particularly limited as long as it is a liquid having a refractive index larger than that of air and smaller than that of the photoresist film to be used. Examples of such an immersion medium include water (pure water, deionized water), a fluorine-based inert liquid, and the like, but an immersion medium having a high refractive index characteristic that is expected to be developed in the near future can also be used. is there. Specific examples of fluorinated inert liquids include C HC1 F
  • liquids mainly composed of 5 3 7 fluorine-based compounds examples thereof include liquids mainly composed of 5 3 7 fluorine-based compounds.
  • water pure water, deionized water
  • the substrate is taken out of the exposure stage, the substrate force liquid is removed, and then the protective film is brought into contact with the protective film removing liquid to be peeled off.
  • a fluorine-based solvent that dissolves the cyclic fluoroalkyl polyether can be used as it is.
  • Perfluoro (2-propyltetrahydrofuran) (boiling point 102 ° C) is preferable.
  • the dissolution rate of the protective film can be greatly improved as shown in the following examples.
  • the contact time to the protective film protection film peeling time
  • the throughput of the product that does not affect the pattern forming ability can be greatly improved.
  • PEB post-exposure heating
  • an alkali developer a conventional one can be arbitrarily used.
  • a force for suitably using an aqueous solution of tetramethylammonium hydroxide (TMAH) or the like is not limited thereto.
  • TMAH tetramethylammonium hydroxide
  • a post-beta may be performed following the development process.
  • rinsing is performed using pure water or the like. In this water rinse, for example, water is dropped or sprayed on the surface of the substrate while rotating the substrate to wash away the developer on the substrate and the photoresist composition dissolved by the developer. Then, by performing drying, the photoresist pattern is patterned into a shape corresponding to the mask pattern. Can be obtained.
  • the protective film is uniform and the contact angle can be reduced, so that the immersion medium does not penetrate into the protective film even in local exposure immersion, Generation of water mark defects and pattern defects derived therefrom can be prevented in advance.
  • the protective film formed of the protective film forming material of the present invention is excellent in water repellency, the amount of the immersion medium that adheres easily after the completion of the exposure is reduced.
  • a photoresist pattern with a fine line width, particularly a line “and” space pattern with a small pitch can be produced with good resolution.
  • the pitch in the line “and” space pattern means the total distance of the photoresist pattern width and the space width in the line width direction of the pattern.
  • an immersion medium that is widely applicable to currently marketed photoresists (especially, ArF photoresists), has excellent versatility, and is a basic characteristic required as a protective film.
  • High resistance, low compatibility with the underlying photoresist film, prevention of elution of components from the immersion medium to the photoresist film, prevention of elution of components from the photoresist film to the immersion medium, protective film Thus, a material for forming a protective film having characteristics such as inhibition of gas permeation was obtained.
  • Target-P6111 manufactured by Tokyo Ohka Kogyo Co., Ltd.
  • a positive photoresist composition is applied on a silicon wafer by a spinner method and dried on a hot plate at 130 ° C. for 90 seconds. A 200 nm thick photoresist layer was formed.
  • FIG. 1 shows a photomicrograph of the air-dried droplets over time (photo taken from above).
  • a white broken line in the figure indicates a dropping center line.
  • Target-P6111 (manufactured by Tokyo Ohka Kogyo Co., Ltd.), which is a positive photoresist composition, is applied onto a silicon wafer by a spinner method, and is pre-betaned at 130 ° C. for 90 seconds on a hot plate. A photoresist layer having a thickness of 200 nm was formed by drying.
  • FIG. 3 shows a photomicrograph (taken from above) showing the time course of air-dried droplets.
  • a white broken line in the figure indicates a dropping center line.
  • the protective film of Fig. 1 (Example 1) has an initial contact angle of 114.7 °
  • the protective film of Fig. 3 (Comparative Example 1)
  • the initial contact angle was 118. 0 °. That is, by using the protective film forming material of the present invention, the initial contact angle can be reduced by 3.3 °, the assumed radius of the same volume droplet can be increased, and the internal pressure of the droplet can be reduced, As a result, the droplets seem to have penetrated into the protective film.
  • an organic antireflective coating composition “ARC-29 ⁇ ” (Nissan Chemical Industry Co., Ltd.) onto a silicon wafer by the spinner method, and baked on a hot plate at 210 ° C for 60 seconds to dry.
  • An organic liquid antireflection film with a film thickness of 77 nm was formed from Tsuji.
  • a positive photoresist composition “TARF-P6111” (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the antireflection film by a spinner method, and pre-beta was applied on a hot plate at 130 ° C for 90 seconds. Then, a photoresist layer having a film thickness of 200 nm was formed on the antireflection film.
  • the substrate on which this protective film was formed was subjected to immersion exposure using an experimental apparatus manufactured by Nikon Corporation using a prism, liquid, and two-beam interference exposure with a wavelength of 193 nm (the bottom surface of this prism is Contact with the protective film via water!
  • PEB treatment was performed at 115 ° C for 90 seconds, and then the protective film was removed using perfluoro (2-butyltetrahydrofuran). Thereafter, it was further developed with an alkaline developer at 23 ° C for 60 seconds.
  • alkali developer 2.38 mass 0/0 tetramethylammonium - ⁇ beam An aqueous hydroxide solution was used.
  • Cyclic fluoroalkyl polyethers having a structural formula represented by the following formula (Il-a) and having different mass average molecular weights (Mw) as shown in Table 1 below are converted into perfluorotributylamine.
  • the dissolved solution (solid content concentration 1.0 mass%) was used as Samples 1-6.
  • Samples 1 to 6 shown in Table 1 below were each applied onto a substrate by a spinner, and then soft beta at 90 ° C. for 60 seconds to form a protective film having a thickness of 28 nm.
  • Silicone anti-reflective coating composition “ARC29” (Brewer Co.) using a spinner
  • An antireflection film with a thickness of 77 nm was formed by coating on a wafer, baking on a hot plate at 225 ° C for 60 seconds and drying.
  • ArF positive photoresist (“TARF-P6111ME”; manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied, pre-betaed at 130 ° C for 90 seconds on a hot plate, and dried.
  • a 225 nm thick photoresist film was formed on the antireflection film.
  • each of the above samples 2 to 6 (however, the solid content concentration was adjusted to 1.1% by mass) was applied and heated at 90 ° C for 60 seconds to protect the film with a thickness of 28 nm. A film was formed.
  • NSR-S302A ArF exposure machine
  • pure water was dropped for 1 minute and placed in a simulated immersion environment.
  • PEB treatment was performed at 130 ° C. for 90 seconds, and then the protective film was peeled off by indirect contact with perfluoro (2-ptyltetrahydrofuran) for 30 seconds. Thereafter, development was further performed at 23 ° C. for 60 seconds using a 2.38 mass% TMAH aqueous solution.
  • the material for forming a protective film of the present invention is extremely excellent in the uniformity of the film surface and can reduce the contact angle with respect to a droplet dropped during the local liquid immersion exposure.
  • a photoresist pattern free from pattern defects can be obtained. Therefore, it is particularly preferably used for local liquid immersion exposure.
  • FIG. 1 is a graph showing a change with time of a contact angle between a protective film and a droplet used in Example 1.
  • FIG. 2 is a photomicrograph (drawing substitute photo) showing a change with time of a droplet dropped on the protective film used in Example 1.
  • FIG. 3 is a graph showing the change over time in the contact angle between the protective film and the droplet used in Comparative Example 1. ⁇ 4] A photomicrograph (drawing substitute photo) showing the change over time of the droplet dropped on the protective film used in Comparative Example 1.

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne un matériau de formation d’une pellicule protectrice pour un processus d’exposition par immersion, adapté à l’utilisation dans un processus d’exposition par immersion, en particulier un processus d’exposition par immersion locale pour remplir un milieu d'immersion liquide seulement entre une lentille d'exposition et un substrat comprenant une pellicule protectrice placée sur une couche de photorésistance, le matériau de formation d'une pellicule protectrice étant formé d'une pellicule photorésistante, le matériau de formation d’une pellicule protectrice comprenant un polyéther de fluoroalkyle cyclique et un solvant fluoro-organique, ainsi qu’un procédé pour former un motif photorésistant utilisant ce matériau de formation d'une pellicule protectrice.
PCT/JP2006/309718 2005-05-17 2006-05-16 Matériau pour la formation d’une pellicule protectrice pour un processus d’exposition par immersion et procédé de formation d’un motif photorésistant utilisant ce matériau WO2006123643A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005144270A JP2006323002A (ja) 2005-05-17 2005-05-17 液浸露光プロセス用ホトレジスト保護膜形成用材料およびこれを用いたホトレジストパターン形成方法
JP2005-144270 2005-05-17
JP2005344644A JP2007148167A (ja) 2005-11-29 2005-11-29 液浸露光プロセス用保護膜形成用材料およびこれを用いたホトレジストパターン形成方法
JP2005-344644 2005-11-29

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11352697A (ja) * 1998-06-12 1999-12-24 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたレジスト材料
WO2004074937A1 (fr) * 2003-02-20 2004-09-02 Tokyo Ohka Kogyo Co., Ltd. Materiau formant un film protecteur en resine et destine a une exposition en immersion, film composite et procede de formation de motifs en resine
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP2005173474A (ja) * 2003-12-15 2005-06-30 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物、該レジスト材料を用いたレジストパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11352697A (ja) * 1998-06-12 1999-12-24 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたレジスト材料
WO2004074937A1 (fr) * 2003-02-20 2004-09-02 Tokyo Ohka Kogyo Co., Ltd. Materiau formant un film protecteur en resine et destine a une exposition en immersion, film composite et procede de formation de motifs en resine
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP2005173474A (ja) * 2003-12-15 2005-06-30 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物、該レジスト材料を用いたレジストパターン形成方法

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