TW200710581A - Protective film-forming material for a process of liquid immersion lithography and method of photoresist patterning with it - Google Patents
Protective film-forming material for a process of liquid immersion lithography and method of photoresist patterning with itInfo
- Publication number
- TW200710581A TW200710581A TW095117501A TW95117501A TW200710581A TW 200710581 A TW200710581 A TW 200710581A TW 095117501 A TW095117501 A TW 095117501A TW 95117501 A TW95117501 A TW 95117501A TW 200710581 A TW200710581 A TW 200710581A
- Authority
- TW
- Taiwan
- Prior art keywords
- protective film
- liquid immersion
- forming material
- immersion lithography
- film formation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005144270A JP2006323002A (ja) | 2005-05-17 | 2005-05-17 | 液浸露光プロセス用ホトレジスト保護膜形成用材料およびこれを用いたホトレジストパターン形成方法 |
| JP2005344644A JP2007148167A (ja) | 2005-11-29 | 2005-11-29 | 液浸露光プロセス用保護膜形成用材料およびこれを用いたホトレジストパターン形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200710581A true TW200710581A (en) | 2007-03-16 |
Family
ID=37431215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095117501A TW200710581A (en) | 2005-05-17 | 2006-05-17 | Protective film-forming material for a process of liquid immersion lithography and method of photoresist patterning with it |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW200710581A (zh) |
| WO (1) | WO2006123643A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3979553B2 (ja) * | 1998-06-12 | 2007-09-19 | 東京応化工業株式会社 | 反射防止膜形成用塗布液組成物およびこれを用いたレジスト材料 |
| TW200424767A (en) * | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
| JP2005099646A (ja) * | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法 |
| JP2005173474A (ja) * | 2003-12-15 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト組成物、該レジスト材料を用いたレジストパターン形成方法 |
-
2006
- 2006-05-16 WO PCT/JP2006/309718 patent/WO2006123643A1/ja active Application Filing
- 2006-05-17 TW TW095117501A patent/TW200710581A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006123643A1 (ja) | 2006-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200504864A (en) | Immersion lithography methods using carbon dioxide | |
| TW200616101A (en) | Method for manufacturing semiconductor device | |
| CN101627337B (zh) | 通过处理印模表面在基底上形成功能性材料的图案的方法 | |
| TW200700924A (en) | A process of imaging a photoresist with multiple antireflective coatings | |
| TW201203318A (en) | Exposure method, exposure device, and device manufacturing method | |
| EP1783821A4 (en) | EXPOSURE SYSTEM AND METHOD FOR PRODUCING THE DEVICE | |
| WO2005003864A3 (en) | Apparatus and method for providing a confined liquid for immersion lithography | |
| TW200736842A (en) | Coating and developing method, coating and developing apparatus, and recording medium | |
| TW200606179A (en) | Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film | |
| EP1596251A4 (en) | IMERSION EXPOSURE USE RESEARCH FILM EDUCATION MATERIAL, COMPILED FILM AND RESISTMAT EDUCATION PROCESS | |
| TW200745764A (en) | Coating compositions for photolithography | |
| TW200518191A (en) | Anti-corrosion layer on objective lens for liquid immersion lithographic application | |
| JP2009283970A5 (zh) | ||
| JP2006520104A5 (zh) | ||
| WO2004013693A3 (en) | Scatterometry alignment for imprint lithography | |
| SG115693A1 (en) | Method for coating a substrate for euv lithography and substrate with photoresist layer | |
| WO2006062930A3 (en) | Method and system for fast filling of templates for imprint lithography using on template dispense | |
| TW200715070A (en) | A method and apparatus for immersion lithography | |
| TW200609683A (en) | Material for forming resist protective film and method for forming resist pattern using the same | |
| CN101198902A (zh) | 具有化学构图表面的软平版印刷印模 | |
| TW200709276A (en) | A system and method for lithography in semiconductor manufacturing | |
| TW200631477A (en) | Method of forming film pattern, device, method of manufacturing device, electro-optical device, and electronic apparatus | |
| TW200615389A (en) | Film forming method, electronic device and electronic apparatus | |
| TW200725897A (en) | Thin film transistor, device electrode thereof and method of formong the same | |
| SG132651A1 (en) | System and method to increase surface tension and contact angle in immersion lithography |