TW200710581A - Protective film-forming material for a process of liquid immersion lithography and method of photoresist patterning with it - Google Patents
Protective film-forming material for a process of liquid immersion lithography and method of photoresist patterning with itInfo
- Publication number
- TW200710581A TW200710581A TW095117501A TW95117501A TW200710581A TW 200710581 A TW200710581 A TW 200710581A TW 095117501 A TW095117501 A TW 095117501A TW 95117501 A TW95117501 A TW 95117501A TW 200710581 A TW200710581 A TW 200710581A
- Authority
- TW
- Taiwan
- Prior art keywords
- protective film
- liquid immersion
- forming material
- immersion lithography
- film formation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This invention provides a material for protective film formation for a liquid immersion exposure process, suitable for use in a liquid immersion exposure process, particularly a local exposure liquid immersion process for filling a liquid immersion medium into only between an exposure lens and a substrate comprising a protective film provided on a photoresist layer, the material for protective film formation being formed on a photoresist film, wherein the material for protective film formation comprises a cyclic fluoroalkyl polyether and a fluoro organic solvent, and a method for photoresist pattern formation using the material for protective film formation.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005144270A JP2006323002A (en) | 2005-05-17 | 2005-05-17 | Material for forming photoresist protective film for liquid immersion exposure process, and photoresist pattern forming method using the material |
JP2005344644A JP2007148167A (en) | 2005-11-29 | 2005-11-29 | Material for protective film formation for liquid immersion exposure process, and method for photoresist pattern formation using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200710581A true TW200710581A (en) | 2007-03-16 |
Family
ID=37431215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095117501A TW200710581A (en) | 2005-05-17 | 2006-05-17 | Protective film-forming material for a process of liquid immersion lithography and method of photoresist patterning with it |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200710581A (en) |
WO (1) | WO2006123643A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3979553B2 (en) * | 1998-06-12 | 2007-09-19 | 東京応化工業株式会社 | Coating liquid composition for forming antireflection film and resist material using the same |
TW200424767A (en) * | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
JP2005099646A (en) * | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | Resist composition for liquid immersion lithography process, and resist pattern forming method using it |
JP2005173474A (en) * | 2003-12-15 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | Resist composition for liquid immersion exposure process and method for forming resist pattern by using the resist material |
-
2006
- 2006-05-16 WO PCT/JP2006/309718 patent/WO2006123643A1/en active Application Filing
- 2006-05-17 TW TW095117501A patent/TW200710581A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2006123643A1 (en) | 2006-11-23 |
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