WO2004067592A1 - レジスト用重合体およびレジスト組成物 - Google Patents
レジスト用重合体およびレジスト組成物 Download PDFInfo
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- WO2004067592A1 WO2004067592A1 PCT/JP2004/000813 JP2004000813W WO2004067592A1 WO 2004067592 A1 WO2004067592 A1 WO 2004067592A1 JP 2004000813 W JP2004000813 W JP 2004000813W WO 2004067592 A1 WO2004067592 A1 WO 2004067592A1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Definitions
- the present invention relates to a resist polymer and a resist composition, and more particularly to a chemically amplified resist composition suitable for fine processing using an excimer laser or an electron beam. Old scenery
- miniaturization has rapidly progressed due to the progress of lithography technology.
- a shorter wavelength of irradiation light is used.
- the KrF excimer laser (wavelength: 248 nm) lithography technology has been introduced to the market, and the ArF excimer laser (wavelength: 193 nm) lithography has been further shortened. A technology is also being introduced.
- F 2 excimer laser one (wavelength: 1 5 7 nm) lithography
- One technique has been studied. Also, as one type of lithography technology, which is slightly different from those described above, electron beam lithography technology is also being vigorously studied.
- Resins used in resists are also changing their structures in response to shorter wavelengths of irradiation light.
- KrF excimer laser lithography use is made of polyhydroxystyrene, which is highly transparent to irradiation light of a wavelength of 248 nm, or one whose hydroxyl group is protected with an acid dissociable, dissolution inhibiting group.
- a r F In malasa-lithography the above resins are not always sufficiently transparent to irradiation light of 193 nm in wavelength, and cannot be used in many cases.
- acryl-based resins that are transparent to light with a wavelength of 193 nm have attracted attention as resist resins used in ArF excimer laser-lithography.
- an acrylic resin for example, a copolymer of a (meth) acrylate having an adamantane skeleton in an ester portion and a (meth) acrylate having a lactone skeleton in an ester portion is disclosed in JP-A-10-319595. And Japanese Patent Publication No. 10-274852.
- the shape of the formed resist pattern is not necessarily satisfactory, and the shape of the resist pattern when viewed from the cross section becomes convex or concave. Accurate pattern transfer to the processing substrate may not be possible.
- the luster contained in the resist composition is aggregated with time to generate insolubles called microgels, which may cause disconnections or defects in the circuit due to the omission of the resist pattern. .
- the size of substrates has increased from 200 mm in diameter to 300 mm.
- the size of the resist pattern to be formed may easily vary.
- PEB post-exposure baking
- PEB temperature the number of heat treatment temperatures between bake units (bake equipment)
- a difference of about C may occur, and under the influence of the temperature difference, the formed resist pattern size may be different for each baking unit to be used. Therefore, there is a need for a resist pattern with low PEB temperature dependence.
- a chemically amplified resist composition containing a resin containing a structural unit having a cyano group is disclosed in, for example, Japanese Patent Publication No. 2002-244295, Japanese Patent Publication No. 2000-258891, and Japanese Patent Publication No. 2002-268222. And Japanese Patent Application Laid-Open No. 2001-264982.
- a cyano group is mentioned as a substituent of an aliphatic hydrocarbon group contained in a group (acid dissociable group) which is eliminated by an acid in a resin.
- 2000-2598915 discloses that a cyano group-containing polymerized unit secures adhesion to a substrate by the presence of a cyano group which is a polar substituent, and performs dry etching of a resist. It is stated to contribute to the improvement of resistance.
- Japanese Patent Application Laid-Open No. 2002-26822 describes that the use of a resin containing a specific structural unit having a cyano group can improve lineage roughness.
- JP 2 0 0 1 - A 2 6 4 9 8 2 discloses, improved permeability to 1 5 7 nm is F 2 excimer one The wave by using a resin to specific structural unit having a Shiano group It states that it can.
- Japanese Patent Application Laid-Open No. 1-101045 discloses an acryl-based monomer which is a raw material of a polymer useful as an optical material having excellent optical properties, low hygroscopicity and heat resistance.
- a (meth) acrylate derivative having an alicyclic skeleton having a cyano group as a substituent is disclosed.
- Japanese Patent Application Laid-Open No. H11-100045 discloses that this (meth) acrylate derivative is used alone or in combination with another unsaturated compound such as (meth) acrylic acid or its ester. It is stated that it can be a copolymer of
- Japanese Patent Application Laid-Open No. 2-193958 discloses a methacrylate having an alicyclic skeleton having a cyano group as a substituent.
- Japanese Patent Application Laid-Open No. 2-189313 / 1995 discloses a monomer composition containing a methacrylic acid ester described in the above-mentioned Japanese Patent Application Laid-Open No. 2-193958, or A monomer composition containing a methacrylic acid ester and a (meth) acrylic acid ester described in JP-A No. A combined thermoplastic resin is disclosed.
- Japanese Patent Application Laid-Open No. 2-189313 discloses that this thermoplastic resin has excellent heat resistance, transparency and moisture absorption resistance, adhesives, paints, fiber treatment agents, release agents, resin modification. It is described as useful for applications such as agents and selective permeable membranes.
- Japanese Patent Application Laid-Open No. 2-216636 describes that a polymer containing a structural unit having a cyano group is useful for an optical disk substrate.
- Japanese Patent Application Laid-Open No. 2-111401 discloses that a polymer containing a structural unit having a cyano group is useful for applications as optical components and optical elements.
- Japanese Patent Application Laid-Open No. 192206/1996 describes that a polymer containing a structural unit having a cyano group is useful as a material for optical disks, plastic lenses, and the like.
- a resist composition comprising a (meth) acrylic copolymer containing a structural unit having a group containing a polar moiety and a structural unit having a group capable of leaving by an acid, and a photoacid generator The resist composition is described, and the polar part (polar group)
- U.S. Patent No. 6,165,678 include examples of a polymer (Example 3) obtained by polymerizing pantolactone methacrylate, isoporyl methacrylate, and methacrylic acid, and 5 — ( 4—) Cyano 2-norbornyl methacrylate, 2,1-acetoxicetyl methacrylate, 1-butyl methyl acrylate, and a polymer obtained by polymerizing methacrylic acid (Example 4); A polymer obtained by polymerizing acrylonitrile, t-butylmethyl acrylate, and methacrylic acid (Example 5), and 5- (4—) cyano-12-norbornyl methacrylate, tert-butylmethyl acrylate, and methacrylic acid Polymer obtained by polymerization of acrylic acid
- Japanese Patent Application Laid-Open No. Hei 11-325 2694 discloses a method for dissolving an alcohol which is protected by a protecting group having at least one moiety containing a nitrile group capable of leaving.
- a structural unit containing a group, and the above-mentioned alkyd soluble group being eliminated by an acid to render the copolymer alkyd soluble; and an alkyl group protected by a protecting group containing an alicyclic hydrocarbon.
- a structural unit containing a soluble group, and having a structure that allows the copolymer to be made soluble by removal of the soluble group by an acid, and a protective group having a lactone structure An acid-sensitive polymer having a constitutional unit containing an alkali-soluble group, and having a structure having a structure that allows the copolymer to be made soluble by elimination of the alkali-soluble group by an acid; and an acid generator. Chemically amplified type containing Resist material is disclosed. Examples of Japanese Patent Application Laid-Open No.
- H11-35252694 include a polymer containing 2-methyl-11-propionitrylcyclohexyl methacrylate as a structural unit having a cyano group (Example 4, Example 5, Example 6, Example 7) and a polymer (Example 8) containing 2-ethyl-11-propionitrylcyclohexyl methacrylate as a structural unit having a cyano group are described.
- the polymers described in the examples of Japanese Patent Application Laid-Open No. H11-3259264 are not necessarily sufficient in stability of the structural unit having a cyano group, and are used as resist resins. In some cases, physical properties may change and handling may be difficult. Further, the resist compositions described in the examples of the above-mentioned JP-A No. 11-352,694 do not always have sufficient dry etching resistance.
- JP-A-2003-222007 published on April 25, 2003 discloses a structural unit having a cyano group and a structural unit having an alicyclic lactone structure. And a resin containing a structural unit having an alicyclic hydrocarbon group, and a photoacid generator. A positive resist composition is disclosed.
- JP-A-2003-122007 discloses a structural unit having cycloaliphatic lactone, a structural unit having cyclohexane lactone, norbornane lactone or adamantan lactone, and more specifically, The following are listed.
- JP-A-2003-122007 mentioned above states that the resin used in the resist composition may further contain a structural unit having a lactone structure.
- Specific examples of the structural unit having a lactone structure include the following.
- JP-A-2003-122007 Contains a polymer containing a structural unit having cyclohexanelactone or norbornane lactone as a structural unit having an alicyclic lactone structure, a structural unit having a cyano group, and a structural unit having an alicyclic hydrocarbon group.
- the resist composition cannot always be said to have a sufficiently good resist pattern shape.
- a polymer containing a structural unit having an adamantine lactone as a structural unit having an alicyclic lactone structure, a structural unit having a cyano group, and a structural unit having an alicyclic hydrocarbon group is usually expensive. In addition, it cannot always be said that it has excellent solubility in organic solvents.
- Invention a polymer containing a structural unit having cyclohexanelactone or norbornane lactone as a structural unit having an alicyclic lactone structure, a structural unit having a cyano group, and a structural unit having an alicyclic hydrocarbon
- the present invention when used as a resist resin in DUV excimer laser lithography or electron beam lithography, has high sensitivity, high resolution, good resist pattern shape, low line edge roughness, It is an object of the present invention to provide a resist polymer that produces less microgel, a resist composition, and a method for producing a pattern using the resist composition.
- the present invention can provide a uniform resist pattern size in a substrate surface even on a large substrate having a diameter of, for example, 30 O mm or more.
- An object of the present invention is to provide a composition and a method for producing a pattern using the resist composition.
- the present invention provides a structural unit represented by the following formula (1), a structural unit having an acid-eliminable group, and the following formulas (4-1), (4-2), (4-3), (4 And (5) a resist polymer comprising a structural unit having a lactone skeleton represented by at least one selected from the group consisting of (4-1-6) and (4-110).
- R Q1 represents a hydrogen atom or a methyl group
- R ° 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
- Z represents a carbon atom having an ester bond and a cyano group. Together with the bonded carbon atom, it represents an atomic group constituting a cyclic hydrocarbon group
- p represents an integer of 1 to 4.
- p is 2 or more, it includes that the cyano group is bonded to the same carbon atom and that it is bonded to a different carbon atom.
- R 41 represents a hydrogen atom or a methyl group
- R 4Q1 and R 4Q2 Each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxy group, a carboxy group or a carboxyl group esterified with an alcohol having 1 to 6 carbon atoms, or R 401 Together with R 4Q2 represents 0—, —S—, —NH— or a methylene chain having 1 to 6 carbon atoms [— (CH 2 ) 5 — (j represents an integer of 1 to 6)].
- I represents 0 or 1
- X 5 represents a hydroxy group, a carboxy group, a C 1-6 acyl group, a C 1-6 alkoxy group, or an esterification with a C 1-6 alcohol as a substituent.
- a linear or branched alkyl group having 1 to 6 carbon atoms which may have at least one group selected from the group consisting of a substituted carboxy group, a cyano group and an amino group, a hydroxy group, a carboxy group, and a carbon number of 1 ⁇ 6 acyl groups, 1-6 carbon alkoxy groups, carbon Represents esterified carboxyl group or an amino group in 1-6 alcohol
- n5 represents an integer of 0 to 4
- m is 1 or represents 2.
- Rukoto which have a plurality of different groups as X 5 in the case of n5 is 2 or more.
- R 42 represents a hydrogen atom or a methyl group
- R 2Q1 and R 2Q2 each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxy group, a carboxy group.
- a 1 and A 2 are joined together to form —0—, one S—, one NH— or a methylene chain having 1 to 6 carbon atoms [— (CH 2 ) k — (k represents an integer of 1 to 6) ].
- X 6 represents, as a substituent, a hydroxy group, a carboxy group, a C 1 to C 6 acyl group, a C 1 to C 6 alkoxy group, a C 1 to C 6 alcohol esterified oxy group, a cyano group and A linear or branched alkyl group having 1 to 6 carbon atoms which may have at least one group selected from the group consisting of amino groups, a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, and a carbon number of 1 Represents a carboxy group or an amino group esterified with an alcohol group having 1 to 6 carbon atoms, an alcohol group having 1 to 6 carbon atoms, and n 6 represents an integer of 0 to 4. When n 6 is 2 or more, X 6 may have a plurality of different groups.
- R 43 represents a hydrogen atom or a methyl group
- R 2Q3, R 2Q4 Waso
- a 3 and A 4 are Each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxy group, a carboxy group or a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, or A 3 and A 4 together form 1 0—, 1 S—, 1 NH— or a methylene chain having 1 to 6 carbon atoms [1 (CH 2 )!-(1 represents an integer of 1 to 6)].
- X 7 is hydroxy group as a substituent, a carboxy group, Ashiru group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a carboxyl group esterified with an alcohol from 1 to 6 carbon, Shiano group and amino A linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, and a carbon number which may have at least one group selected from the group consisting of A carboxy group or an amino group esterified with an alcohol group having 1 to 6 carbon atoms or an alcohol having 1 to 6 carbon atoms, and n7 represents an integer of 0 to 4. When n 7 is 2 or more, X 7 includes a plurality of different groups.
- R 45 represents a hydrogen atom or a methyl group
- R 8 , R 9 each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 8 carbon atoms
- 5 R 62 and R 72 each independently represent a hydrogen atom or a methyl group.
- Y 12 , ⁇ 22 , and ⁇ ⁇ 32 each independently represent one CH 2 — or one CO—0—, at least one of which represents one CO—0—.
- X 9 represents a hydroxy group, a carboxy group, a C 1-6 acyl group, a C 1-6 alkoxy group, a carboxy group esterified with a C 1-6 alcohol, a cyano group,
- a linear or branched alkyl group having 1 to 6 carbon atoms which may have at least one group selected from the group consisting of amino groups, a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, and a carbon number of 1 Represents an alkoxy group of 6 to 6, a carboxy group or an amino group esterified with an alcohol having 1 to 6 carbon atoms, and n9 represents an integer of 0 to 4.
- n 9 is 2 or more, X 9 may have a plurality of different groups.
- R 46 represents a hydrogen atom or a methyl group
- R 1G represents a hydrogen atom.
- R 53 , R 63 , and R 73 each independently represent a hydrogen atom or a methyl group
- ⁇ 13 and ⁇ 2 ⁇ 33 each independently represent _CH 2 — or one CO—0—, at least one of which represents one CO—0—.
- X 1Q represents, as a substituent, a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, a cyano group and A linear or branched alkyl group having 1 to 6 carbon atoms, which may have at least one group selected from the group consisting of amino groups, a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, carbon Represents an alkoxy group having 1 to 6 carbon atoms, a carboxy group or an amino group esterified with an alcohol having 1 to 6 carbon atoms, and n10 represents an integer of 0 to 4. When n 10 is 2 or more, X 10 includes a plurality of different groups.
- R 9 R 92 , R 93 , and R 94 each independently represent a hydrogen atom, a linear or branched alkyl group of carbon to 6, a hydroxy group, a carboxy group, or an alcohol of carbon to ester. Or R 9 i and R 92 together — 0—, — s—, 1 NH— or a methylene chain of 1 to 6 carbon atoms [— (CH 2 ) t — (T represents an integer of 1 to 6)], and ml represents 1 or 2. )
- X 5 , X 6 , X 7 , X 9 and X 1. May be any position in the cyclic structure.
- the structural units represented by the formula (1) do not need to be all the same, and may be a mixture of two or more types.
- the structural units having an acid leaving group do not need to be all the same, and two or more types may be mixed.
- the structural units having a lactone skeleton do not need to be the same, and may be a mixture of two or more types. That is, the structural units (4-1), (4-2), (4-3), (4-5), (4-6) and (4-10) must all be the same. However, two or more types may be mixed.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the present invention relates to the resist polymer, wherein R Q 2 in the formula (1) is a hydrogen atom.
- Z in the above formula (1) represents an atomic group constituting a bridged cyclic hydrocarbon group together with a carbon atom bonded to an ester bond and a carbon atom bonded to a cyano group.
- the present invention relates to a polymer for resist.
- R G 2 in the above formula (1) is a hydrogen atom
- Z represents a bridged cyclic hydrocarbon group together with a carbon atom having an ester bond and a carbon atom having a cyano group. It relates to the above resist polymer in which p represents 1 and represents a constituent atomic group.
- the cyclic hydrocarbon group has a skeleton selected from the group consisting of a cyclic terpene hydrocarbon, an adaman ring, a tetracyclododecane ring, a dicyclopentane ring, and a tricyclodecane group.
- the present invention relates to a polymer for resist.
- the present invention also relates to the resist polymer, wherein the cyclic hydrocarbon group has a norbornane group.
- the present invention also relates to the resist polymer, wherein the structural unit represented by the above formula (1) is a structural unit represented by the following formula (2).
- R Q1 represents a hydrogen atom or a methyl group.
- the structural units represented by the formula (2) need not be all the same, and two or more structural units may be mixed.
- the present invention relates to the resist polymer, wherein the structural unit represented by the formula (1) is a structural unit represented by the following formula (1-1).
- R Q1 represents a hydrogen atom or a methyl group
- R D3 represents a hydrogen atom. Or a linear or branched alkyl group having 1 to 6 carbon atoms.
- a Q 1, A Q2 is or represents it its being a linear or branched alkyl group having a hydrogen atom or a carbon number of 1-4 independently or, A 01 and A 02 and are together a connexion one 0- One S —, —NH— or an alkylene chain having 1 to 6 carbon atoms.
- the structural units represented by the formula (1-1) need not be all the same, and may be a mixture of two or more.
- the present invention relates to the above resist polymer, wherein p in the above formula (1) is 1, and the cyano group is bonded to a carbon atom adjacent to the carbon atom having an ester bond.
- the present invention relates to the resist polymer, wherein the structural unit represented by the formula (1) is a structural unit represented by the following formula (1-2).
- R Q1 represents a hydrogen atom or a methyl group
- R Q4 R ° R °
- R G 7 is or represents it it independently hydrogen atom or a carbon number 1-4 linear or branched alkyl group, or, R G4, R Q5, R. 6,: two of R 07 represents a connexion alkylene chain of 1 to 6 carbon atoms such together. )
- the structural units represented by the formula (1-2) do not need to be all the same, and may be a mixture of two or more types.
- the structural unit having the lactone skeleton may be represented by the formula (4-1):
- the present invention relates to one kind of the above resist polymer.
- the structural units (4-1), (4-2), (4-3) and (4-10) need not all be the same, but two or more types may be used. It may be scattered.
- the ratio of the constitutional unit represented by the above formula (1) is 5 to 3 mol% in total, and the proportion of the constitutional unit having an acid leaving group is 30 to 60 mol% in total. %, And the ratio of the constituent units having a lactone skeleton is 30 to 60 mol% in total.
- the present invention also relates to the above resist polymer, wherein the constituent unit having an acid leaving group has an alicyclic skeleton.
- the structural unit having an alicyclic skeleton is a structural unit having a structure having one or more cyclic hydrocarbon groups.
- the structural unit having an acid leaving group is at least selected from the group consisting of the following formulas (3-1-1), (3-2-1) and (3-3-1).
- the present invention relates to one kind of the above resist polymer.
- R 31 represents a hydrogen atom or a methyl group, and: R 1 represents an alkyl group having 1 to 3 carbon atoms; X 1 represents a hydroxy group, a carboxy group, At least one group selected from the group consisting of an alkoxy group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, and an amino group C1-C6 linear or branched alkyl group, hydroxy group, carboxy group, C1-C6 acyl group, C1-C6 alkoxy group, C1-C6 Represents a carboxy group or an amino group esterified with an alcohol, and n 1 represents an integer of 0 to 4. When n 1 is 2 or more, X 1 has a plurality of different groups. Including.
- R 32 represents a hydrogen atom or a methyl group, represents R 2, R 3 Waso is it independently an alkyl group having 1 to 3 carbon atoms, X 2 is a substituent At least one selected from the group consisting of a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, and an amino group.
- a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, and 1 to 5 carbon atoms which may have one group
- the alcohol esterified with alcohol 6 represents a lipoxy group or an amino group
- n2 represents an integer of 0 to 4.
- X 2 in the case of n2 is 2 or more.
- R 33 represents a hydrogen atom or a methyl group
- R 4 represents an alkyl group having 1 to 3 carbon atoms
- X 3 represents a hydroxy group, a carboxy group, or a carbon number as a substituent. It has at least one group selected from the group consisting of an alkoxy group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a hydroxyl group esterified with an alcohol having 1 to 6 carbon atoms, and an amino group.
- C1-C6 linear or branched alkyl group hydroxy group, carboxy group, C1-C6 acyl group, C1-C6 alkoxy group, C1-C6 alcohol
- n3 represents an integer of 0 to 4
- q represents 0 or 1.
- X 3 represents an integer of 0 to 4.
- the positions substituted with X 1 , X 2, and X 3 are any positions in the cyclic structure. It may be.
- the structural units (3-1-1), (3-2-1) and (3-3-1) do not need to be all the same, and two or more are mixed. It may be something.
- the present invention relates to the resist polymer, wherein the structural unit having an acid-labile group is a structural unit represented by the following formula (3-5).
- R 35 represents a hydrogen atom or a methyl group.
- the structural units (3-5) need not be all the same, and two or more structural units may be mixed.
- the present invention provides at least one of the structural units represented by the above formula (1) and the above formulas (3-1-1), (3-2-1), (3-3-1) and (3-3-1)
- the present invention relates to the above resist polymer, which comprises at least one structural unit selected from the group consisting of 6) and (4-10).
- the structural units represented by one type do not need to be all the same, and may be a mixture of two or more types.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer '.
- the present invention provides at least one of the structural units represented by the above formula (1) and the above formulas (3-1-1), (3-2-1), (3-3-1) and (3-3-1) A structural unit represented by at least one selected from the group consisting of 3-5) and a structural unit represented by the above formulas (4-1), (4-2), (4-3) and (4-10). And a structural unit represented by at least one selected from the group.
- the structural unit represented by the formula (1) and the formulas (3-1-1), (3-2-1), (3-3-1) and (3-5) A structural unit represented by at least one selected from the group consisting of: and at least one selected from the group consisting of the formulas (4-1-1), (4-2), (4-3) and (4-1-10)
- the structural units represented need not all be the same, and may be a mixture of two or more types.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the present invention provides a composition comprising at least one structural unit selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-1-3) — Contains at least one structural unit selected from the group consisting of (1) and (3-5), and at least one structural unit represented by the following formula (4-1-7)
- the present invention relates to the resist polymer.
- R 47 represents a hydrogen atom or a methyl group.
- this polymer a structural unit represented by at least one kind selected from the group consisting of the formula (2) and the formula (1-1), a compound represented by the formula (3-1-1) and a formula (3-3-3) It is necessary that the structural unit represented by at least one selected from the group consisting of 1) and the formula (3-5) and the structural unit represented by the formula (4-1-7) are all the same. Alternatively, two or more types may be mixed. Further, in this polymer, each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of at least one structural unit selected from the group consisting of the above formulas (2) and (1-1) is 5 to 30 mol% in total
- the total ratio of structural units represented by at least one selected from the group consisting of 3-1-1), (3-3-1) and (3-5) is 30 to 60 mol%, Expression (
- the present invention relates to the above resist polymer, wherein the ratio of the constituent units represented by 4-7) is 30 to 60 mol% in total.
- the present invention provides a composition comprising at least one structural unit selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-1-3) — Contains at least one structural unit selected from the group consisting of (1) and (3-5) and at least one structural unit represented by the following formula (4-8)
- the present invention relates to the resist polymer.
- R 48 represents a hydrogen atom or a methyl group.
- the structural unit represented by at least one selected from the group consisting of 1) and formula (3-5) and the structural unit represented by formula (4-8) must all be the same. However, two or more types may be mixed. Further, in this polymer, each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the present invention relates to a method for reducing the number of particles selected from the group consisting of the above formulas (2) and (1-1).
- the ratio of structural units represented by at least one kind is 5 to 30 mol% in total, and the above formula (
- the present invention relates to the above resist polymer, wherein the ratio of the constituent units represented by 4-8) is 30 to 60 mol% in total.
- the present invention provides a composition comprising at least one structural unit selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-1-3) — Contains at least one structural unit selected from the group consisting of (1) and (3-5), and at least one structural unit represented by the following formula (4-11)
- the present invention relates to the resist polymer.
- R 411 represents a hydrogen atom or a methyl group.
- the structural unit represented by at least one selected from the group consisting of 1) and the formula (3-5), and the structural unit represented by the formula (4-11) must all be the same.
- two or more types may be mixed.
- each constituent unit can take an arbitrary sequence. Therefore, this polymer is
- the copolymer may be a copolymer, an alternating copolymer, or a block copolymer.
- the ratio of structural units represented by at least one selected from the group consisting of the above formulas (2) and (1-1) is 5 to 30 mol% in total
- the ratio of at least one structural unit selected from the group consisting of 3-1), (3-3-1) and (3-5) is 30 to 60 mol% in total.
- the present invention relates to the resist polymer, wherein the ratio of the constituent units represented by 4-11) is 30 to 60 mol% in total.
- the present invention provides a composition comprising at least one structural unit selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-1-3) — Contains at least one structural unit selected from the group consisting of (1) and (3-5) and at least one structural unit represented by the following formula (4-9)
- the present invention relates to the resist polymer.
- R 49 represents a hydrogen atom or a methyl group.
- this polymer selected from the group consisting of formula (2) and formula (1-1) And a structure represented by at least one selected from the group consisting of the formula (3-1-1), the formula (3-3-1) and the formula (3-5)
- the unit and the structural unit represented by the formula (4-19) do not need to be all the same, and may be a mixture of two or more types. Further, in this polymer, each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural units represented by at least one kind selected from the group consisting of the above formulas (2) and (1-1) is 5 to 30 mol% in total
- the ratio of at least one structural unit selected from the group consisting of 3-1), (3-3-1) and (3-5) is 30 to 60 mol% in total.
- the present invention relates to the resist polymer, wherein the ratio of the constituent units represented by the formula (4-9) is 30 to 60 mol% in total.
- the present invention provides a composition comprising at least one structural unit selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-1-3) —1) and (3-5) ⁇ at least one structural unit selected from the group consisting of ⁇ and at least one selected from the group consisting of the above formulas (4-1-2) and (4-1-3)
- the present invention relates to the above resist polymer, which comprises a structural unit represented by one kind.
- this polymer a structural unit represented by at least one kind selected from the group consisting of the formula (2) and the formula (—1), a compound represented by the formula (3-1-1), a formula (3-3-1) ) And at least one structural unit selected from the group consisting of formulas (3-5), and at least one structural unit selected from the group consisting of formulas (4-2) and (4-3).
- the constituent units to be used do not need to be all the same, and may be a mixture of two or more types. Further, in this polymer, each constitutional unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the present invention relates to a method for reducing the number of particles selected from the group consisting of the above formulas (2) and (1-1).
- the ratio of structural units represented by at least one kind is 5 to 30 mol% in total, and the group consisting of the above formulas (3-1-1), (3-3-1) and (3-5)
- the ratio of the constituent units represented by at least one kind selected is 30 to 60 mol% in total, and is represented by at least one kind selected from the group consisting of the above formulas (4-2) and (4-1-3).
- the present invention relates to the resist polymer, wherein the ratio of the constituent units is 30 to 60 mol% in total.
- the present invention comprises at least one of the structural units represented by the above formula (1), and the above formulas (3-1-1), (3-2-1) and (3-3-1)
- the above-mentioned comprising a structural unit represented by at least one kind selected from the group and a structural unit represented by at least one kind selected from the group consisting of the above formulas (4-1-7) and (4-8) It relates to a polymer for resist.
- the structural unit represented by the formula (1) is selected from the group consisting of the formulas (3-1-1-1), (3-2-1), and (3-3-1). And at least one of the structural units represented by at least one selected from the group consisting of the formulas (4-7) and (4-1-8) is the same. There is no need to use them, and two or more types may be mixed.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the constituent units represented by the above formula (1) is 5 to 30 mol% in total, and the above formulas (3-1-1), (3-2-1) and (3-2-1)
- the ratio of the constituent units represented by at least one selected from the group consisting of 3-3-1) is 30 to 60 mol% in total, and the ratio is represented by the above formulas (4-1-7) and (4-8)
- the present invention relates to the above resist polymer, wherein the ratio of at least one structural unit selected from the group is 30 to 60 mol% in total.
- the present invention provides at least one of the structural units represented by the above formula (2), at least one of the structural units represented by the above formula (3-1-1), and the above formula (4-8) )
- the resist polymer containing at least one of the structural units represented by In the polymer, the structural unit represented by the formula (2), the structural unit represented by the formula (3-1-1), and the structural unit represented by the formula (4-1) are respectively However, they need not all be the same, and two or more types may be mixed. Further, in this polymer, each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural unit represented by the above formula (2) is 5 to 30 mol% in total
- the ratio of the structural unit represented by the above formula (3-1-1) is The present invention relates to the resist polymer, wherein the total amount is 30 to 60 mol%, and the ratio of the structural units represented by the above formula (4-18) is 30 to 60 mol%.
- the present invention relates to the above resist polymer, which further comprises at least one structural unit selected from the group consisting of the following formulas (3-1-2) and (3-4).
- R 31 represents a hydrogen atom or a methyl group
- R 11 represents a hydrogen atom
- X 1 represents a hydroxy group, a carboxy group, a carbon number of 1 to 1 as a substituent. 6, an alkoxy group having 1 to 6 carbon atoms, a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, a cyano group, and an amino group.
- X 1 may have a plurality of different groups.
- R 3 4 represents a hydrogen atom or a methyl group
- X 4 is a hydroxy group as a substituent, a carboxy group, Ashiru group having 1 to 6 carbon atoms, 1 to 6 carbon atoms
- Al A linear or branched alkyl group having 1 to 6 carbon atoms which may have at least one group selected from the group consisting of a carboxy group, an amino group and a carboxy group esterified with an alcohol having 1 to 6 carbon atoms.
- X 4 includes a plurality of different groups.
- the position substituted by X 1 and X 4 may be any position in the cyclic structure.
- the structural units (3-1-2) and (3-4) do not need to be all the same, and may be a mixture of two or more.
- the present invention also relates to the resist polymer having a mass average molecular weight of 1,000 to 100,000.
- the present invention also relates to the above resist polymer having a mass average molecular weight of 5,000 to 8,000.
- the present invention further relates to the above resist polymer containing a structural unit derived from a chain transfer agent.
- the structural units derived from the chain transfer agent need not be all the same, and two or more structural units may be mixed.
- the present invention relates to the above-mentioned polymer produced by performing polymerization while dropping a solution containing a monomer which is a constituent unit of a target polymer by polymerization into a polymerization vessel.
- the present invention relates to a polymer for resist.
- the present invention also relates to a resist composition containing the resist polymer.
- the present invention also relates to a chemically amplified resist composition containing the resist polymer and a photoacid generator.
- the present invention also relates to the above chemically amplified resist composition further containing a nitrogen-containing compound.
- the present invention provides a pattern manufacturing method comprising: a step of applying the resist composition on a substrate to be processed; a step of exposing to light having a wavelength of 250 nm or less; and a step of developing using a developer. About the method.
- the present invention relates to the above-described pattern manufacturing method, wherein the light used for exposure is an ArF excimer laser.
- the present invention also relates to a method for producing a pattern, comprising a step of applying the resist composition on a substrate to be processed, a step of exposing with an electron beam, and a step of developing using a developer.
- the resist polymer of the present invention includes a structural unit represented by the formula (1), a structural unit having an acid-labile group, and a compound represented by the formulas (4-1-1), (4-2), and (4- 3) a structural unit having a lactone skeleton represented by at least one selected from the group consisting of s (4-5), (4-6) and (4-1-10).
- the term “acid leaving group” refers to a group that decomposes or leaves under the action of an acid.
- the structural unit having a lactone skeleton is, among others, a structural unit represented by the formula (4-1), a structural unit represented by the above (4-2), and a structural unit represented by the above (4-1-3) Structural unit, a structural unit represented by the above (4-10) is preferable.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the resist polymer of the present invention includes a structural unit having a cyano group-containing cyclic hydrocarbon group represented by the formula (1), a structural unit having an acid-labile group, and a compound represented by the formula (4- 1), (4-2), (4-3) (4-5), (4-1-6), and a structure having a lactone skeleton represented by at least one selected from the group consisting of (4-10)
- a structural unit having a cyano group-containing cyclic hydrocarbon group represented by the formula (1) a structural unit having an acid-labile group
- a structure having a lactone skeleton represented by at least one selected from the group consisting of (4-10) By containing the unit, the shape of the formed resist pattern is improved without impairing high sensitivity and high resolution as compared with the conventional resist polymer, and the adhesion to the substrate is improved. And the generation of line edge roughness and the formation of microphone mouth gel are suppressed.
- a uniform resist pattern size can be obtained in a substrate surface even on a large substrate having a diameter of 300 mm or more. Further, the resist pattern to be formed does not change much depending on the PEB temperature, that is, the resist pattern can have a so-called low PEB temperature dependency.
- the structural unit represented by the formula (1) the structural unit having an acid leaving group, the formulas (4_1), (4-2), 4-3), (4-5) All structural units having a lactone skeleton represented by at least one selected from the group consisting of (4-6) and (4-10) are essential. If any one of these constituent units is missing, excellent effects cannot be obtained. ⁇
- the structural unit represented by the above formula (1) of the resist polymer of the present invention is derived from a (meth) acrylate derivative having a cyano group represented by the following formula (5). That is, the resist polymer of the present invention has a cyano group represented by the following formula (5). It is obtained by copolymerizing a monomer composition containing a (meth) acrylate derivative.
- the (meth) acrylate derivative represented by the following formula (5) may be a single type or a mixture of two or more types.
- R Q 1 represents a hydrogen atom or a methyl group
- R Q 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
- Z represents a carbon atom and an cyano group having an ester bond.
- p represents an integer of 1 to 4.
- p is 2 or more, it includes that the cyano group is bonded to the same carbon atom and that it is bonded to a different carbon atom.
- (Meth) acrylic acid is a general term for acrylic acid and methyacrylic acid.
- R Q2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
- the alkyl group may be linear or branched. Examples of such an alkyl group include a methyl group, an ethyl group, a propyl group, and an isopropyl group.
- the R D 2, among others, from the viewpoint of solubility in an organic solvent, preferably a hydrogen atom or a methyl group, and more preferably a hydrogen atom.
- a hydrogen atom is particularly preferable from the viewpoint of the stability of the polymer and the ease of handling.
- Z represents an atomic group constituting a cyclic hydrocarbon group, preferably a bridged cyclic hydrocarbon group, together with the carbon atom bonded to the ester bond and the carbon atom bonded to the cyano group.
- the number of carbon atoms of the cyclic hydrocarbon group is not particularly limited, but is preferably 7 to 20. Good.
- This cyclic hydrocarbon group may have a substituent other than the cyano group. Examples of the substituent include a hydroxy group, a carboxy group, an acyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, and an amino group.
- Z represents a bridged cyclic hydrocarbon group together with an ester-bonded carbon atom and a cyano-bonded carbon atom because of the high dry etching resistance required for the resist. Is preferable.
- Z represents, for example, a cyclic terpene hydrocarbon such as a norbornane ring, an adamantine ring, a tetracyclododecane ring, a dicyclopentane ring, a tricyclodecane ring, a decahydronaphthylene ring, a polyhydrocarbon.
- a cyclic terpene hydrocarbon such as a norbornane ring, an adamantine ring, a tetracyclododecane ring, a dicyclopentane ring, a tricyclodecane ring, a decahydronaphthylene ring, a polyhydrocarbon.
- An atomic group having an anthracene II, a camphor II, a cholesteric ring and the like can be mentioned.
- Z is an atomic group having a cyclic terpene hydrocarbon such as a norbornane ring, an adamantane ring, a tetracyclododecane II, a dicyclopentane ring, or a tricyclodecane ring because of its high dry etching resistance required for a resist.
- an atomic group having a norbornane ring is particularly preferable because of its excellent copolymerizability with other monomers.
- p represents the number of cyano groups of the formula (1) hydrocarbon group, and is an integer of 1 to 4. p is preferably 1 or 2 and more preferably 1 in terms of sensitivity and resolution.
- the cyano group may be bonded to the same carbon atom or to a different carbon atom, but is bonded to a different carbon atom from the viewpoint of adhesion to a metal surface or the like. Preferably.
- the substitution position of the cyano group is not particularly limited.
- Z is a norbornyl ring
- the substitution position of the cyano group is 2-position and / or 3-position.
- monomers represented by the above formula (5) include monomers represented by the following formulas (6-1) to (6-16).
- I represents a hydrogen atom or a methyl group.
- the monomers represented by the above formula (5) are, among others, those having dry etching resistance.
- the monomer represented by the above formula (6-1), the monomer represented by the above formula (6-3), the monomer represented by the above formula (6-4), The monomer represented by the formula (6-6) is preferable, the monomer represented by the above formula (6-1), the monomer represented by the above formula (6-4), and the monomer represented by the above formula (6-4)
- the monomer represented by the formula (6) is more preferable, and the monomer represented by the above formula (6-1) is particularly preferable in view of excellent copolymerizability with other monomers.
- the structural unit represented by the formula (1) of the resist polymer of the present invention includes the structural unit represented by the formula (111).
- the structural unit represented by the formula (1-1) is derived from a (meth) acrylate derivative having a cyano group represented by the following formula (5-1). That is, the resist polymer containing the structural unit represented by the formula (1-1) is a monomer containing a (meth) acrylic ester derivative having a cyano group represented by the following formula (5-1): It is obtained by copolymerizing one composition.
- the (meth) acrylate derivative represented by the following formula (5-1) may be a single type or a mixture of two or more types.
- R Q1 represents a hydrogen atom or a methyl group
- R Q3 represents a hydrogen atom or a linear or branched alkyl group having 1 to 6 carbon atoms.
- a Q1 and A Q2 represent its being independently represent a linear or branched alkyl group having a hydrogen atom or a carbon number 1-4, or connexion one 0-such together with a Q1 and a 02, one S-, one NH- or carbon atoms Represents an alkylene chain of 1 to 6.
- R ° 3 is a hydrogen atom or a linear or branched chain having 1 to 6 carbon atoms. Represents a alkyl group.
- R 3 is preferably an ethyl group, a methyl group, or a hydrogen atom, and more preferably a methyl group, from the viewpoint of excellent copolymerizability with other monomers.
- a Q1 and A Q2 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms, or A Q1 and A Q2 are taken together.
- the A 0 1 and A Q2 from the viewpoint of excellent solubility in solvents, it is preferred that the the A Q1 and A Q2 are both water atom, from the viewpoint of excellent dry etching resistance, and A Q1 and A Q2 Preferably together form one CH 2 — or one CH 2 —CH 2 —.
- monomers represented by the above formula (5-1) include monomers represented by the following formulas (6-17) to (6-18).
- R represents a hydrogen atom or a methyl group.
- p in the formula (1) is 1, and a cyano group is a carbon atom adjacent to a carbon atom having an ester bond. Some are bonded to atoms. The bond between the carbon atom bonded to the ester bond and the carbon atom bonded to the cyano group is usually a single bond.
- Z in the formula (1) is preferably an atomic group having a cyclohexane ring from the viewpoint of excellent copolymerizability with other monomers.
- Z in the formula (1) is a bridged cyclic hydrocarbon because of the high dry etching resistance required for the resist. 4000813
- An atomic group having an elementary group is preferred.
- an atomic group having a cyclohexane ring, an atomic group having an adamantane ring, an atomic group having a camphor ring, an atomic group having a norbornane group, and an atomic group having a pinane ring are particularly preferable.
- the structural unit represented by the formula (112) is derived from a (meth) acrylic acid ester derivative having a cyano group represented by the following formula (5-2). That is, the resist polymer containing the structural unit represented by the formula (1-2) is a monomer containing a (meth) acrylic acid ester derivative having a cyano group represented by the following formula (5-2). It is obtained by copolymerizing the composition.
- the (meth) acrylate derivative represented by the following formula (5-2) may be a single type or a mixture of two or more types.
- R Q1 represents a hydrogen atom or a methyl group
- R G7 each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; 4, R ° R °: represents the two are connexion alkylene chain having 1 to 6 carbon atoms such with the R 07. )
- R in the equation (5-2). 4 , R. 5 , R. 6 , R Q7 each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms, or R Q4 , R Q5 ,
- R 06 and R 07 are taken together to represent an alkylene chain having 1 to 6 carbon atoms.
- R 05, R Q6, R Q7 from the viewpoint of excellent copolymerizability with other monomers, R Q4,
- R 05 , R ° 6 , and R 07 are preferably all hydrogen atoms. Also, R ° 4 , R 05 , 0813
- R 06 and R 07 it is preferable that R and R Q7 together form one CH 2 — or one CH 2 —CH 2 — from the viewpoint of excellent dry etching resistance.
- Specific examples of the monomer represented by the above formula (5-2) include monomers represented by the following formulas (6-19) to (6-20). In the formulas (6-19) to (6-20), R represents a hydrogen atom or a methyl group.
- Such a cyano group-containing (meth) acrylate derivative represented by the above formula (5) can be produced, for example, in the following step (I) or (II).
- C The following step (I) Represents a process for producing a monomer represented by the above formula (6-1), and the following step (II) represents a process for producing a monomer represented by the above formula (6-17)
- step (II) represents a process for producing a monomer represented by the above formula (6-17)
- other monomers represented by the above formula (5) can be produced in the same manner.
- Raw materials such as (meth) acrylonitrile, cyclopentene, 2-methoxib, and (meth) acrylic acid and derivatives thereof can be produced by known methods, and commercially available products can also be used. .
- the addition reaction of acrylic acid or methacrylic acid to the unsaturated bond is preferably carried out using an acid catalyst, using an excess of acrylic acid or methacrylic acid without solvent or in a solvent such as toluene. It is preferred to do so.
- the acid catalyst used in this addition reaction is not particularly limited, and examples thereof include hydrochloric acid, sulfuric acid, nitric acid, p-toluenesulfonic acid, acetic acid, trifluoroacetic acid, and trifluoromethanesulfonic acid. Sulfuric acid, ⁇ -toluenesulfonic acid, and trifluoromethanesulfonic acid are preferred, and trifluoromethanesulfonic acid is more preferred, from the viewpoint of the reaction rate.
- the product of the above reaction may include some structural isomers, geometric isomers, and optical isomers.In the present invention, a mixture of two or more isomers may be used, or the product may be purified. Any of the isomers may be used alone. In the present invention, T / JP2004 / 000813
- the mixture can be used for the polymerization reaction as it is. Further, even if it contains a reaction intermediate, it can be used for the polymerization reaction as it is.
- the product of the above reaction may be purified by simple distillation, thin film distillation, recrystallization or column chromatography, if necessary.
- the cyano group-containing (meth) acrylate derivative represented by the above formula (5-2) can be produced, for example, by the following step (III).
- the following step (III) shows a process for producing the monomer represented by the above formula (6-19), but the same applies to other monomers represented by the above formula (5-2). And can be manufactured.
- R represents a hydrogen atom or a methyl group.
- Epoxides such as cyclohexenoxide, which are raw materials, can be produced by a known method, and commercially available products can also be used.
- an epoxide is reacted with a cyanating agent to synthesize /?-Cyanohydrin.
- sodium cyanide, potassium cyanide and trimethylsilylcyan are preferred from the viewpoint of safety, and hydrogen cyanide, sodium cyanide and potassium cyanide are preferred from the viewpoint of inexpensiveness.
- this cyanation reaction proceeds under both acidic and alkaline conditions. In the present production method, from the viewpoint of the reaction rate, it is preferable to use potassium cyanide as the cyanating agent and carry out the cyanation reaction under alkaline conditions.
- the obtained 5-cyanohydrin can be obtained by known methods such as distillation and column chromatography. It may be purified by the above method, or may be used for the next reaction without purification.
- cyanohydrin is (meth) acrylated.
- the (meth) acrylic acid esterification reaction of ⁇ -siahydrin can be performed by a known method such as esterification and transesterification.
- Esterification agents used in this (meth) acrylic acid esterification reaction include (meth) acrylic acid, (meth) acrylic acid chloride, (meth) acrylic anhydride, and (meth) acrylic acid ester. And so on.
- the esterifying agent (meth) acrylic acid chloride and (meth) acrylic anhydride are preferable from the viewpoint of the reaction rate.
- a catalyst such as a Lewis acid may be used, if necessary.
- the product of the above reaction may include some structural isomers, geometric isomers, and optical isomers.In the present invention, a mixture of two or more isomers may be used, or the product may be purified. Any of the isomers may be used alone. In the present invention, the mixture of isomers can be used for the polymerization reaction as it is. Further, even if it contains a reaction intermediate, it can be used for the polymerization reaction as it is.
- the product of the above reaction may be purified by a known method such as distillation or column chromatography, if necessary.
- the cyano group-containing (meth) acrylic acid ester derivative represented by the above formula (6-18) can be produced, for example, by the following step (IV).
- Cyanorbornene which is a raw material, can be produced by the same method as in the above step (I).
- an epoxidation reaction of cyanonorbornene is performed.
- cyanonorbornene is generally reacted with an oxidizing agent.
- the oxidizing agent used includes hydrogen peroxide, peracetic acid, perbenzoic acid, m-chloroperbenzoic acid and the like.
- hydrogen peroxide is preferable in terms of easy handling, and m-chloroperbenzoic acid is preferable in terms of excellent reactivity.
- the epoxide opening reaction is generally performed under acidic conditions or basic conditions. Further, a catalyst such as a Lewis acid may be used if necessary. In the present production method, a method in which methanol or metal methoxide is added (reacted) under basic conditions is preferred from the viewpoint of excellent reactivity.
- the obtained compound may be purified by a known method such as distillation or column chromatography, or may be used for the next reaction without purification.
- the following (meth) acrylic acid esterification reaction can be carried out by the above-mentioned method, that is, the same method as the (?)-Cyanohydrin (meth) acrylic acid esterification reaction, or the like.
- the product of the above reaction may include some structural isomers, geometric isomers, and optical isomers.
- a mixture of two or more isomers may be used, or the product may be purified. Any of the isomers may be used alone.
- the mixture of isomers can be used for the polymerization reaction as it is. Further, even if it contains a reaction intermediate, it can be used for the polymerization reaction as it is.
- the product of the above reaction may be purified, if necessary, by a known method such as distillation or column chromatography. 2.
- Polymer for resist of the present invention may include some structural isomers, geometric isomers, and optical isomers.
- a mixture of two or more isomers may be used, or the product may be purified. Any of the isomers may be used alone.
- the mixture of isomers can be used for the polymerization reaction as it is. Further, even if it contains a reaction intermediate, it can be used for the polymerization reaction as it is.
- the resist polymer of the present invention comprises at least one cyano group-containing (meth) acrylic acid ester derivative represented by the above formula (5), at least one monomer having an acid leaving group, and a lactone skeleton.
- a preferred resist polymer of the present invention comprises at least one cyano group-containing (meth) acrylate derivative represented by the above formula (6-1) and / or (6-17), It is obtained by copolymerizing a monomer composition containing at least one kind of monomer having a releasing group and at least one kind of monomer having a lactone skeleton, and is particularly preferable as the resist polymer of the present invention.
- a cyano group-containing (meth) acrylate derivative represented by the above formula (6-1) one or more monomers having an acid-labile group, and a monomer having a lactone skeleton.
- a monomer composition containing at least one of the following: a structural unit represented by the above formula (2), a structural unit having an acid-labile group, and a lactone skeleton And a structural unit.
- the resist polymer of the present invention comprises at least one structural unit represented by the above formula (1) other than the structural unit represented by the above formula (2), and a structure represented by the above formula (2).
- One or more units may be contained.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the structural unit represented by the above formula (1) (including the structural unit represented by the above formula (2) and the structural unit represented by the above formula (11-1)) in the resist polymer of the present invention.
- the ratio is preferably 5 mol% or more in total and more preferably 10 mol% or more in view of favorable resist pattern shape.
- the structural unit represented by the above formula (1) (the structural unit represented by the above formula (2) and the structural unit represented by the above formula (1-1)) in the resist polymer of the present invention may also be used.
- the ratio of the constituent units having an acid-labile group in the resist polymer of the present invention is preferably at least 30 mol%, more preferably at least 35 mol%, in view of sensitivity and resolution. .
- the proportion of the structural unit having an acid-labile group in the resist polymer of the present invention is preferably 60 mol% or less in total, and 50 mol% in view of adhesion to a metal surface or the like. The following is more preferred.
- the proportion of the structural unit having a lactone skeleton in the resist polymer of the present invention is preferably at least 30 mol%, more preferably at least 35 mol%, in view of adhesion to metal surfaces and the like. .
- the ratio of the structural unit having a lactone skeleton in the resist polymer of the present invention is preferably 60 mol% or less in total and more preferably 50 mol% or less from the viewpoint of sensitivity and resolution.
- the acid leaving group is not particularly limited as long as it is a group that decomposes or leaves under the action of an acid, and examples thereof include groups represented by the following formulas (12-1) to (12-9) .
- R 101 represents a tertiary alkyl group having 4 to 20 carbon atoms, and s represents an integer of 0 to 10.
- R 1C ⁇ 2 and R 1 () 3 each independently represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 ⁇ • 18 carbon atoms
- R 1Q4 represents Carbon number 1-2
- R 103 , R 1 () 2 and R 1 ( , or R 1D3 and R 104 represent the carbon to which they are attached Represents a cyclic hydrocarbon group together with an atom.
- R 1Q5 , R 1Q6 , and R 1Q7 each independently represent a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, or R 1Q5 and R 1Q6 , R 1Q5 and R 1Q7 , or R 1Q6 and R 1Q7 each represent a cyclic hydrocarbon group together with the carbon atom to which they are bonded.
- R 1Q8 and R 1Q9 , R 108 and R lt5 , or R 1 () 9 and R 110 together with the carbon atom to which they are attached represent a cyclic hydrocarbon group.
- at least two of R 1Q8 , R 1Q9 , and R 110 represent a group other than hydrogen.
- a 1Q1 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent .
- I 111 and R 112 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group, and R 113 represents an alkyl group or an aryl group. Or R 111 and: 112 , and R 113 , or
- R 112 and R 113 represent a cyclic hydrocarbon group or an aliphatic complex together with the carbon atom and oxygen atom to which they are bonded. However, at least two of II 111 , R 112 and R 113 represent groups other than hydrogen.
- a 1 Q 2 represents a divalent aromatic hydrocarbon group which may have one or more substituents.
- R 114 , R 115 and R 116 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- R 114 and R 115 , R 114 and R 116 , or R 115 and R 116 together with the silicon atom to which they are attached represent an aliphatic heterocycle.
- at least two of R 114 , R 115 and R 116 represent groups other than hydrogen.
- a 1 ( ) 3 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent.
- R 117 , R 118 , and R 119 each independently represent a hydrogen atom, Represents a kill group, a cycloalkyl group, an alkenyl group or an aryl group.
- R 117 and R 118 , R 117 and R 119 , or R 118 and R 119 together with the carbon atom to which they are attached represent a cyclic hydrocarbon group.
- R 117, R 1 18 s R 119 represents at least two groups other than hydrogen.
- a 1Q4 represents a divalent aromatic hydrocarbon group which may have a mono- or polycyclic substituent .
- R 12G and R 121 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group, and R 122 represents an alkyl group or an aryl group. Or R 12 . And R 121 , R 12 ° and R 122 , or R 121 and R 122 together with the carbon and oxygen atoms to which they are attached represent a cyclic hydrocarbon group or an aliphatic complex. However, at least two of R 12D , R 121 and R 122 represent groups other than hydrogen.
- A1Q5 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent.
- R 123 , R 124 and R 125 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- R 123 and R 124 , R 123 and R 125 , or R 124 and R 125 together with the silicon atom to which they are attached represent an aliphatic complex.
- at least two of R 123 , R 124 and R 125 represent groups other than hydrogen.
- a 1Q6 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent. )
- R 101 represents a tertiary alkyl group having 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, and s is an integer of 0 to 10.
- Specific examples of the group represented by the formula (12-1) include a tert-butoxycarbonyl group, a tert-butoxycarbonylmethyl group, a tert-amyloxycarbonyl group, a tert-amyloxycarbonylmethyl group, and a 1,1- Getylpropyloxycarbonyl, 1, 1-ethylpropyloxycarbonylmethyl, 1-ethylcyclopentyloxycarbonyl, 1-ethylcyclopentyloxycarbonylmethyl, 1-ethyl-2-cyclopentyl Xycarbonyl group, 1-ethyl-2-cyclopentenyloxycarbonylmethyl group, 1-ethoxy Examples thereof include a rubonylmethyl group, a 2-tetrahydrobiranyloxycarbonylmethyl group, and a 2-tetrahydrofuranyloxycarbonylmethyl group.
- R 1G2 and R 1G3 each independently represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms.
- an alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a t-rt-butyl group, a cyclopentyl group, and a cyclohexyl group , 2-ethylcyclohexyl group, n-octyl group and the like.
- R 1D4 represents a monovalent hydrocarbon group which may contain a heteroatom such as an oxygen atom having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms.
- R 1 (54 is a linear, branched or cyclic alkyl group, or a group in which some of these hydrogen atoms have been substituted with a hydroxyl group, an alkoxy group, an oxo group, an amino group, an alkylamino group, etc. I can do it.
- Specific examples of the group represented by the formula (12-2) include a tetrahydrofuran-2-yl group, a 2-methyltetrahydrofuran-12-yl group, a tetrahydropyran-12-yl group, and a 2-methyltetrahydro group.
- Examples thereof include a pyran-1-yl group and groups shown below. — CH 2 -0-CH 3 -CH 2 -0-CH2CH 3 -CH 2 -0- (CH 2 ) 2 CH 3
- an ethoxyshethyl group, a butoxyethyl group, and an ethoxypropyl group are preferable.
- R 1G5 , R 106 , and R 107 each independently have 1 to 1 carbon atoms.
- R 105 and R 1 () 6 , R 105 and R 1 () 7 , and R 1G6 and R 107 may be bonded to each other to form a ring.
- group represented by the formula (12-3) include tert-butyl group, tert-amyl group, triethylcarbyl group, 1-methylcyclohexyl group, 1-ethylcyclopentyl group, 1-ethylnorbornyl group, 2- (2-methyl) adamantyl group, 2- (2-ethyl) adamantyl group, 1,1,1,1,3,3,3-hexafluoro-2-methyl-1-isopropyl group , 1, 1, 1, 3, 3, 3-hexafluoro-2-cyclohexyl isopropyl group. Further, groups represented by the following formulas (13-1) to (13-17) are also included.
- R 24 , R 251 , and R 252 each independently represent a straight-chain or branched-chain having 1 to 6 carbon atoms. Or a cyclic alkyl group.
- R 26 and R 27 each independently represent a hydrogen atom, a monovalent hydrocarbon group which may contain a heteroatom, or a monovalent hydrocarbon group which may contain a heteroatom.
- the hetero atom includes an oxygen atom, a sulfur atom, a nitrogen atom, and the like.
- R 28 is a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms.
- R 24 , R 251 and R 252 specifically, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, n-pentyl, n-hexyl, cyclo Examples include a propyl group, a cyclopropyl methyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group.
- R 26 and R 27 include, in addition to a hydrogen atom, a linear, branched or cyclic alkyl group, a hydroxyalkyl group, an alkoxy group, an alkoxyalkyl group, and the like.
- R 1 ( ⁇ 8, R 109 s R 11 Q each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or ⁇ Li Ichiru group.
- the alkyl group may be linear or branched.
- the number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 18, and more preferably 1 to 10.
- the number of carbon atoms of the cycloalkyl group is not particularly limited, but is preferably 1 to 18, and more preferably 1 to 10. Examples of such an alkyl group and a cycloalkyl group include the same groups as R 105 and R 10 R 107 in the formula (12-3).
- the number of carbon atoms in the alkenyl group is not particularly limited, but is preferably 2 to 4.
- Examples of such an alkenyl group include a vinyl group, a propenyl group, an aryl group and a butyr group.
- the carbon number of the aryl group is not particularly limited, but is preferably 6 to 14.
- Examples of such aryl groups include phenyl, xylyl, tolyl, cumenyl, naphthyl, and anthracenyl groups.
- R 109 , R 108 and R 110 , and R 1 () 9 may be bonded to each other to form ⁇ .
- Examples of such a ring-forming group include those similar to R 105 and R 106 , R 105 and R 107 , and R 106 and R 107 in formula (12-3).
- a 1Q1 represents a monovalent or polycyclic aromatic hydrocarbon group which may have a substituent.
- the carbon number of the divalent aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 14.
- Examples of such a divalent aromatic hydrocarbon group include a phenyl group, a xylyl group, a tolyl group, a cumenyl group, a naphthyl group and an anthracenyl group.
- the substituent include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, and iodine), a nitro group, a cyano group, a methyl group, an ethyl group, and a propyl group.
- Acyloxy group, alkenyl group mentioned above, vinyloxy group examples include alkenyl groups such as ethoxy group, aryloxy group and butenyloxy group, aryloxy groups such as the above aryl groups and phenoxy groups, and aryloxycarbonyl groups such as benzoyloxy group.
- I 111 and R 112 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- R 111 and R 112 are R 108 and R 109 ⁇ R 11 in the formula (12-4). Similar to And the same applies to preferred ones.
- R 113 represents an alkyl group or an aryl group.
- the alkyl group may be linear or branched.
- the number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 20, and more preferably 1 to 10. Examples of such an alkyl group include those similar to R 102 and R 103 in the formula (12-2).
- the carbon number of the aryl group is not particularly limited, but is preferably 6 to 14.
- Such aryl groups include phenyl, xylyl, tolyl, cumenyl, naphthyl, anthracenyl and the like.
- R 112 and R 113 , and R 112 and R 113 may combine with each other to form ⁇ .
- II 111 , R 112 and R 113 preferably have 1 to 1 carbon atoms. 18, and more preferably an alkylene group which may contain a heteroatom such as an oxygen atom having 1 to 10 carbon atoms. Examples of such a ring the formed group, the formula (12- 2) R 102 in the R 103, R 102 and R 104, R 103 and those similar to R 104 is like et be.
- a 1G2 represents a monovalent or polyvalent aromatic hydrocarbon group which may have a substituent.
- a 1D2 is the same as A 101 in the formula (12-4), and preferred examples are also the same.
- R 114 , R 115 and R 116 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- R 114 , R 115 and R 116 are the same as R 108 and 10 ⁇ 110 in the formula (12-4), and preferred ones are also the same.
- a 1Q3 represents a monovalent or polyvalent aromatic hydrocarbon group which may have a substituent.
- a 1 (33 is the same as A 1Q1 in the formula (12-4), and the preferable ones are also the same.
- R 117 and R 118 R llg each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- a 1Q4 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent.
- R 117 , R 118 , R 119 and A 104 are respectively the same as R 108 , R 109 , R 110 and A 101 in the formula (12-4) The same applies to preferred ones.
- R 12Q and R 121 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- R 122 represents an alkyl group or an aryl group.
- a 105 represents a monovalent or polycyclic aromatic hydrocarbon group which may have a substituent.
- R 12 . , R 121, R 122, A 105 it it, is similar to the I 111, R 112, R 113 , A 102 in formula (12 5), preferable ones are also same.
- R 123 , R 124 and R 125 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
- a 1D6 represents a monovalent or polycyclic aromatic hydrocarbon group which may have a substituent.
- R 123 , R 12 ⁇ R 125 and A 1D6 are respectively the same as R 114 , R 115 R 116 and A 103 in the formula (12-6), The same applies to preferred ones.
- the acid-labile group preferably has an alicyclic skeleton in view of the high dry etching resistance required for the resist, and specifically, is exemplified as the group represented by the formula (12-3) Groups represented by the above formulas (13-1) to (13-17) are preferred.
- Preferred structural units having an acid leaving group include, for example, structural units represented by the following formulas (7-1) to (7-4).
- R 81 to R 84 each represent a hydrogen atom or a methyl group.
- the structural unit represented by the above formula (7-3) and the structural unit represented by the above formula (7-4) are more preferable because of the high dry etching resistance required for the resist. .
- the structural units represented by the above formulas (7-1) to (7-4) can be obtained by copolymerizing monomers represented by the following formulas (8-1) to (8-4). can get.
- R 81 to R 84 each represent a hydrogen atom or a methyl group.
- the structural unit having an acid-labile group is preferably a structural unit having an alicyclic skeleton from the viewpoint of high dry etching resistance required for a resist.
- a structural unit having an alicyclic skeleton has a structure having at least one cyclic hydrocarbon group. Is a structural unit.
- Such a structural unit is usually a group from which a cyclic hydrocarbon group is eliminated by the action of an acid.
- the structural unit represented by the formula (3-1-1) and the formula (3-2-1) represented by the formula (3-1-1) are preferable in terms of high drying resistance required for a resist.
- the structural unit represented by the formula (3) and the structural unit represented by the formula (3-3-1) are particularly preferable.
- R 1 in the formula (3-1-1) is preferably a methyl group, an ethyl group, or an isopropyl group in terms of sensitivity and resolution.
- N 1 in the formula (3-1-1) is preferably 0 from the viewpoint of high dry etching resistance.
- a methyl group, an ethyl group, and an isopropyl group are preferable in terms of sensitivity and resolution.
- N2 in the formula (3-2-1) is preferably 0 from the viewpoint of high dry etching resistance.
- R 4 in the formula (3-3-1) is preferably a methyl group, an ethyl group, or an isopropyl group in terms of sensitivity and resolution.
- N3 in the formula (3-3-1) is preferably 0 from the viewpoint of high dry etching resistance.
- Q in the formula (3-3-1) is preferably 1 from the viewpoint of high dry etching resistance.
- a monomer having an acid leaving group may be copolymerized.
- the monomer having an acid leaving group can be used alone or in combination of two or more as necessary.
- monomers having an acid leaving group include monomers represented by the following formulas (9-1) to (9-18) and (9-23).
- I represents a hydrogen atom or a methyl group.
- monomers represented by the above formula (9-1) and those represented by the above formula (9-2) are preferable in terms of sensitivity and resolution.
- Monomer, monomer represented by the above formula (9-5), monomer represented by the above formula (9-16), monomer represented by the above formula (9-23) or Geometric isomers and these optical isomers are more preferable, and the monomer represented by the above formula (9-11) and the monomer represented by the above formula (9-12) The monomers represented are particularly preferred.
- the monomer represented by the formula (9-23) is not a structural unit having an alicyclic skeleton, but is preferable because high sensitivity and resolution can be obtained.
- examples of the structural unit having an acid leaving group include those shown below.
- R 8 Q represents an acid leaving group
- the structural unit having a lactone skeleton will be described.
- the structural unit having a lactone skeleton When the structural unit having a lactone skeleton has a protecting group that can be eliminated by an acid, it has better sensitivity. In addition, when the structural unit having a lactone skeleton has a high carbon density, that is, when the ratio of the number of carbon atoms to the total number of atoms in the structural unit is high, more excellent dry etching resistance is obtained.
- the structural unit having a lactone skeleton is represented by the above formula (4-1), (4
- the structural unit having a lactone skeleton includes the structural unit represented by the formula (4-1-1), the structural unit represented by the formula (4-1-2), and the formula (4) in view of sensitivity or dry etching resistance.
- a structural unit represented by 3), a structural unit represented by the formula (4-1-5), a structural unit represented by the formula (4-6), and a configuration represented by the formula (4-10) Units are preferred.
- N5 in the formula (4-1) is preferably 0 from the viewpoint of high dry etching resistance.
- M in the formula (4-1) is preferably 1 in terms of sensitivity and resolution.
- AA 2 in the formula (4-2) is preferably 10- in view of high solubility in an organic solvent.
- R 2G 1 and R 2G2 in the formula (4-2) a hydrogen atom, a methyl group, an ethyl group, and an isopropyl group are preferable from the viewpoint of high solubility in an organic solvent.
- N6 in the formula (4-2) is preferably 0 from the viewpoint of high dry etching resistance.
- a 3 and A 4 in the formula (4-3) are preferably —CH 2 — from the viewpoint of high dry etching resistance, and —0— from the viewpoint of high solubility in an organic solvent.
- R 2Q3 and R 2C in the formula (4-3) a hydrogen atom, a methyl group, an ethyl group, and an isopropyl group are preferable from the viewpoint of high solubility in an organic solvent.
- N7 in the formula (4-3) is preferably 0 from the viewpoint of high dry etching resistance.
- R 8 and R 9 in the formula (415) a methyl group, an ethyl group, and an isopropyl group are preferable from the viewpoint of sensitivity and resolution.
- a hydrogen atom is preferable from the viewpoint of high solubility in an organic solvent.
- ⁇ 12 , ⁇ 22 , and ⁇ 32 in the equation (4-1-5) are one CO—0— and the other two are one CH 2 — because of their high adhesion to metal surfaces and the like.
- N9 in the formula (4-1-5) is preferably 0 from the viewpoint of high dry etching resistance.
- R 1Q in the formula ( 416 ) is preferably a methyl group, an ethyl group, or an isopropyl group in terms of sensitivity and resolution.
- a hydrogen atom is preferable from the viewpoint of high solubility in an organic solvent.
- Nl 0 in the formula (4-6) is preferably 0 from the viewpoint of high dry etching resistance.
- R 91 , R 92 , R 93 , and R 94 are preferably a hydrogen atom or a methyl group because of their high solubility in organic solvents.
- Ml in the equation (4-110) is preferably 1 in terms of sensitivity and resolution.
- the structural unit represented by the formula (4-1) and the structural unit represented by the formula (4-1-2) are preferable because they have high solubility in organic solvents and are inexpensive.
- the structural unit, the structural unit represented by (4-1-3), and the structural unit represented by (4-10) are preferable.
- the structural unit represented by the above formula (4-1) is particularly preferable from the viewpoint of obtaining high sensitivity and being inexpensive.
- the structural unit represented by (4-2) and the structural unit represented by (4-1-3) are particularly preferable from the viewpoint of high drying resistance.
- the structural unit represented by the above formula (4-10) is particularly preferable in terms of excellent thermal stability and low cost.
- a monomer having a lactone skeleton may be copolymerized.
- the monomer having a lactone skeleton can be used singly, or in combination of two or more as needed.
- Examples of the monomer having a lactone skeleton include: ( ⁇ -valerolactone) (meth) acrylic acid derivative having an acetylolactone ring (me) acrylic acid derivative, and polycyclic lactone (Meth) acrylic acid derivatives, and derivatives of these compounds having a substituent on the lactone ring are exemplified.
- monomers having a lactone skeleton are represented by the following formulas (10-1) to (10-20), (10-22) to (10-24), and (10-41). Monomers may be mentioned.
- R represents a hydrogen atom or a methyl group.
- a monomer represented by the above formula (101) and a monomer represented by the above formula (10-2) are preferable from the viewpoint of sensitivity.
- the above equation (10 — The monomer represented by the formula (10-6) and the optical isomer thereof are more preferable, and from the viewpoint of dry etching resistance, the monomer represented by the formula (10-6)
- the isomer is more preferable, and from the viewpoint of solubility in a resist solvent, a monomer represented by the above formula (10-7), a monomer represented by the above formula (10-11), —
- the monomer represented by (15), the monomer represented by the above formula (10-19), and geometric isomers and optical isomers thereof are more preferable.
- examples of the monomer having a lactone skeleton include monomers represented by the following formulas (10-25) to (10-40) and (10-44) to (10-50).
- R represents a hydrogen atom or a methyl group.
- a monomer represented by the above formula (10-25), and geometric isomers and optical isomers thereof are preferable because of high solubility in an organic solvent.
- examples of the monomer having a lactone skeleton include monomers represented by the following formulas (10-51) to (10 • 60).
- the monomer represented by 57) and the monomer represented by the above formula (10-58) are preferable, and the monomer represented by the above formula (10-58) is more preferable.
- the resist polymer of the present invention may further contain structural units other than those described above. That is, the resist polymer of the present invention comprises a cyano group-containing (meth) acrylate derivative represented by the above formula (5), a monomer having an acid leaving group, and Represented by at least one selected from the group consisting of the above formulas (4-1), (4-2), (4-3), (4-5), (4-6) and (4-10) It may be a copolymer of another copolymerizable monomer other than the monomer having a lactone skeleton.
- the resist polymer of the present invention can contain, for example, a structural unit having no alicyclic group and having an alicyclic skeleton.
- the structural unit having an alicyclic skeleton is a structural unit having a structure having one or more hydrocarbon groups.
- the structural unit having the aliphatic skeleton may be one type or two or more types.
- a resist polymer containing a structural unit having an alicyclic skeleton has excellent dry etching resistance. Further, when these structural units have a hydroxyl group, a more excellent resist pattern can be obtained.
- a structural unit represented by the following formula (3-1-2) and a structural unit represented by the following formula (3-4) are preferred because of the high dry etching resistance required for a resist.
- the constituent units represented are preferred.
- R 31 represents a hydrogen atom or a methyl group
- R 11 represents a hydrogen atom
- X 1 represents a hydroxy group, a carboxy group, a C 1-6 At least one selected from the group consisting of an alkoxy group having 1 to 6 carbon atoms, a carboxy group esterified with an alcohol having 1 to 6 carbon atoms, a cyano group and an amino group.
- X 1 may have a plurality of different groups.
- R 3 4 represents a hydrogen atom or a methyl group
- X 4 is a hydroxy group as a substituent, a carboxy group, Ashiru group of from 1 to 6 carbon, Al having 1 to 6 carbon atoms
- a linear or branched alkyl group having 1 to 6 carbon atoms which may have at least one group selected from the group consisting of a carboxy group, an amino group and a carboxy group esterified with an alcohol having 1 to 6 carbon atoms.
- n 4 is 2 or more
- X 4 includes a plurality of different groups.
- the position substituted by X 1 and X 4 may be any position in the cyclic structure.
- N 1 in the formula (3-1-2) is preferably 0 from the viewpoint of high dry etching resistance, and is preferably 1 from the viewpoint of good resist pattern shape.
- X 1 is preferably a hydroxy group from the viewpoint of good resist pattern shape.
- N 4 in the formula (3-4) is preferably 0 from the viewpoint of high dry etching resistance, and is preferably 1 from the viewpoint of good resist pattern shape.
- X 4 is preferably a hydroxy group from the viewpoint of good resist pattern shape.
- a monomer having an alicyclic skeleton may be copolymerized.
- the monomer having an alicyclic skeleton is one kind, or If necessary, two or more types can be used in combination.
- Examples of the monomer having an alicyclic skeleton include cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate, tricyclodecanyl (meth) acrylate, and (meth) acrylate. Preference is given to dicyclopentenyl acrylate and derivatives of these compounds having a substituent on the formula II hydrocarbon group.
- monomers having an alicyclic skeleton include monomers represented by the following formulas (9-19) to (9-22).
- R represents a hydrogen atom or a methyl group.
- copolymerizable monomers include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and (meth) methyl acrylate.
- Styrene 1-methylstyrene, vinyltoluene, p-hydroxystyrene, p-t-butoxycarbonylhydroxystyrene, 3,5-di-t-butyl-14-hydroxystyrene, 3,5-dimethyl-14-hydroxystyrene, aromatic alkenyl compounds such as p-t-perfluorobutylbutylstyrene, p- (2-hydroxy-1-i-propyl) styrene;
- Unsaturated carboxylic acids and carboxylic anhydrides such as acrylic acid, methacrylic acid, maleic acid, maleic anhydride, itaconic acid and itaconic anhydride;
- the other monomer is preferably used in a range of 20 mol% or less based on the whole monomer components.
- the structural unit represented by the formula (1) is at least one selected from the group consisting of the structural units represented by the formula (2) and the formula (1-1).
- the structural unit having an acid-eliminable group is a structural unit represented by the above formula (3-1-1), the above formula (3-3-1) and the above formula (3-5) At least one selected from the group is preferable, and the structural unit having a lactone skeleton is represented by the above formula (4-2), the above formula (4-1-3), the following formula (4-7), or the following formula (4-1-8) At least one selected from the group consisting of structural units represented by the following formulas (4-9) and (4-11) is preferable.
- the resist polymer of the present invention among others, the resist pattern shape, line edge roughness and suppression of microgel, sensitivity, resolution and adhesion to metal surfaces and the like, and high solubility in an organic solvent are high.
- a polymer containing at least one structural unit represented by the following formula (4-7) and at least one structural unit represented by the following formula (4-7) is preferable.
- R 47 represents a hydrogen atom or a methyl group.
- a structural unit represented by at least one kind selected from the group consisting of the formulas (2) and (1-1) and a compound represented by the formula (3-1-1), (3-3-1) ) And (3-5), the structural unit represented by at least one selected from the group consisting of: and the structural unit represented by the formula (4-7) need not all be the same. However, two or more kinds may be mixed as long as they are represented by the above general formula.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the proportion of the structural unit represented by one kind is preferably 5 to 30 mol% in total from the viewpoint of resist pattern shape, line edge roughness and microgel suppression. Further, the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (3-1-1), (3-3-1) and (3-5) in the polymer is determined by sensitivity and From the viewpoint of resolution, the total content is preferably 30 to 60 mol%. In addition, the above formula (4-7),
- the total content is preferably 30 to 60 mol%.
- the resist polymer of the present invention includes, among others, resist pattern shape, suppression of lineage roughness and microgel, sensitivity, angularity, adhesion to metal surfaces and the like, and solubility in organic solvents. From a high point, structural units represented by at least one selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-3-1) and A polymer containing at least one structural unit selected from the group consisting of (3-5) and at least one structural unit represented by the following formula (4-8) is preferable.
- R 48 represents a hydrogen atom or a methyl group.
- the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (2) and (11-1) in the polymer is determined in terms of resist pattern shape, lineage roughness, and microgel suppression. Therefore, the total amount is preferably 5 to 30 mol%. Further, the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (3-1-1), (3-3-1) and (3-5) in the polymer is determined by sensitivity and From the viewpoint of resolution, the total content is preferably 30 to 60 mol%. The ratio of the structural unit represented by the above formula (4-8) in the polymer is 30 to 60 mol% in total in view of high adhesion to a metal surface or the like and high solubility in an organic solvent. preferable.
- the resist polymer of the present invention among others, the resist pattern shape, suppression of line edge roughness and microgel, sensitivity, resolution and adhesion to metal surfaces and the like, and high solubility in organic solvents, A structural unit represented by at least one member selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1) (3-3-1) and (3-5) A polymer containing at least one structural unit selected from the group consisting of and at least one structural unit represented by the following formula (4-11) is preferable.
- R 411 represents a hydrogen atom or a methyl group.
- R 411 represents a hydrogen atom or a methyl group.
- this polymer at least one selected from the group consisting of the formulas (2) and (1-1) is used.
- the constituent units represented by 11) do not need to be all the same, and may be a mixture of two or more as long as they are represented by the above general formula.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (2) and (1-1) in the polymer is determined from the viewpoint of resist pattern shape, line edge roughness and microgel suppression.
- the total content is preferably 5 to 30 mol%.
- the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (3-1-1), (3-3-1) and (3-5) in the polymer is determined by sensitivity and From the viewpoint of resolution, the total content is preferably 30 to 60 mol%.
- the ratio of the structural unit represented by the above formula (4-11) in the polymer is 30 to 60 mol in total from the viewpoint of high adhesion to metal surfaces and the like and solubility in organic solvents. % Is preferred.
- the resist polymer of the present invention among others, the resist pattern shape, suppression of line edge roughness and microgel, sensitivity, resolution and adhesion to metal surfaces and the like, and high solubility in organic solvents, A structural unit represented by at least one member selected from the group consisting of the above formulas (2) and (1-1), and the above formulas (3-1-1), (3-3-1) and (3-5) )), And a polymer containing at least one structural unit represented by the following formula (419) and a structural unit represented by at least one selected from the group consisting of:
- R 49 represents a hydrogen atom or a methyl group.
- the structural unit represented by at least one selected from the group consisting of and the structural unit represented by the formula (4-9) need not all be the same. However, two or more kinds may be mixed as long as they are represented by the above general formula.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural units represented by one kind is preferably 5 to 30 mol% in total from the viewpoint of resist pattern shape, lineage roughness and microgel suppression. Further, the ratio of the constitutional unit represented by at least one selected from the group consisting of the above formulas (3-1-1), (3-3-1) and (3-5) in the polymer is determined by sensitivity and From the viewpoint of resolution, the total content is preferably 30 to 60 mol%. In addition, the above formula (4-19) in the polymer
- the total content is preferably 30 to 60 mol%.
- the resist polymer of the present invention includes, among others, the above formula (1) because of its high resist pattern shape, line edge roughness and suppression of microgel, sensitivity, resolution, adhesion to metal surfaces and the like, and high dry etching resistance.
- a structural unit represented by at least one selected from the group consisting of 2) and (1-1), and the above formula (3 -1-1) s (3-3-1) and (3-5) It contains at least one structural unit selected from the group and a structural unit represented by at least one type selected from the group consisting of the above formulas (4-2) and (4-3). Polymers are preferred.
- this polymer a structural unit represented by at least one kind selected from the group consisting of the formulas (2) and (1-1) and a compound represented by the formulas (3-1-1) and (3-3-1) ) And (3-5) a structural unit represented by at least one selected from the group consisting of, and at least one selected from the group consisting of formulas (4-1-2) and (4-3)
- the structural units do not need to be all the same, and two or more types may be mixed as long as they are represented by the above general formula.
- each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (2) and (1-1) in the polymer is determined from the viewpoint of resist pattern shape, line edge roughness and microgel suppression.
- the total content is preferably 5 to 30 mol%.
- the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (3-1-1), (3-3-1) and (3-5) in the polymer is determined by sensitivity and From the viewpoint of resolution, the total content is preferably 30 to 60 mol%.
- the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (4-2) and (4-3) in the polymer is such that adhesion to a metal surface or the like and dry etching resistance are poor. From a high point, the total content is preferably 30 to 60 mol%.
- the weight average molecular weight of the resist polymer of the present invention is not particularly limited. From the viewpoints of resisting resist and the shape of the resist, it is preferably at least 1,000, more preferably at least 2,000, particularly preferably at least 4,000. Further, the mass average molecular weight of the resist polymer of the present invention is preferably 100,000 or less, more preferably 50,000 or less, from the viewpoint of solubility in a resist solution and resolution. , 000 or less is particularly preferred.
- Te is cowpea on the type of structural unit having a lactone structure containing, for example, 2-ex o-menu evening Kuriroiruokishi one 4- Okisatorishikuro [4.2.3 1.0 3 '7] nonane one 5- one
- the weight average molecular weight of the resist polymer is more preferably 8,000 or less from the viewpoint of solubility in a resist solution and a resist pattern shape.
- the mass average molecular weight of the resist polymer is preferably 5,000 or more and 8,000 or less, more preferably 7,000 or less.
- the resist polymer of the present invention at least one of the structural units represented by the above formula (1) and the above formulas (3-1-1), (3-2-1) A structural unit represented by at least one selected from the group consisting of 1) and (3-3-1); and at least one structural unit selected from the group consisting of the above formulas (4-1-7) and (.4-8).
- a polymer containing a structural unit represented by one type Such a polymer has a particularly low PEB temperature dependency in ordinary lithography, and can provide a uniform resist pattern size with little variation in the substrate plane even on a large substrate with a diameter of 300 mm or more. .
- a structural unit represented by the formula (1) and at least one selected from the group consisting of the formulas (3-1-1), (3-2-1) and (3-3-i) 1 The structural units represented by the species and the structural units represented by at least one selected from the group consisting of the formulas (4-7) and (4-8) need not be all the same. In addition, two or more kinds may be used as long as they are represented by the above general formula. Further, in this polymer, each structural unit can take an arbitrary sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural unit represented by the above formula (1) in the polymer is preferably 5 to 30 mol% in total. Further, the ratio of the structural unit represented by at least one selected from the group consisting of the above formulas (3-1-1), (3-2-1) and (3-3-1) in the polymer is as follows: A total of 30 to 60 mol% is preferred. The ratio of the structural units represented by at least one selected from the group consisting of the above formulas (4-7) and (4-8) in the polymer is preferably 30 to 60 mol% in total. By setting the ratio of the constituent units in this range, a higher effect of the present invention can be obtained.
- At least one kind of the structural unit represented by the above formula (2), at least one kind of the structural unit represented by the above formula (3-1-1), and at least one kind represented by the above formula (4-8) A polymer containing at least one structural unit is preferred. Such a polymer has a smaller PEB temperature dependency in ordinary lithography and can obtain a more uniform resist pattern size in the substrate plane even on a large substrate having a diameter of 300 mm or more.
- this polymer also in this polymer, the structural unit represented by the formula (2), the structural unit represented by the formula (3-1-1), and the structural unit represented by the formula (4-8) However, it is not necessary that they are all the same, and two or more kinds may be mixed as long as they are represented by the above general formula. Also, in this polymer, each structural unit can take any sequence. Therefore, this polymer may be a random copolymer, an alternating copolymer, or a block copolymer.
- the ratio of the structural unit represented by the above formula (2) in the polymer is preferably 5 to 30 mol% in total.
- the structure represented by the above formula (3-1-1) in the polymer The ratio of the synthetic units is preferably 30 to 60 mol% in total.
- the ratio of the structural unit represented by the above formula (4-8) in the polymer is preferably 30 to 60 mol% in total.
- the structural units represented by the above formula (3-1-1) include, among others, 2-methyl-12-adamantyl (meth) acrylate, 2-ethyl-12-adamantyl (meth) acrylate, and the like. Structural units derived from 2-lower alkyl-12-adamantyl (meth) acrylate are preferred.
- the polymer can contain a structural unit derived from the chain transfer agent.
- the resist polymer of the present invention containing a structural unit derived from a chain transfer agent may have a higher effect of the present invention.
- Suitable chain transfer agents in this case include, specifically, 1-butanethiol, 1-octanethiol (n-octylmercaptan), cyclohexanethiol, 21-butanethiol, 1-decanethiol, 1-tetradecane Thiol, 2-methyl-1-propanethiol, 2-mercaptoethanol, 1-thioglycerol, and the like.
- the amount of the chain transfer agent used for producing the resist polymer of the present invention is usually preferably at least 0.01 mol%, more preferably at least 0.1 mol%, based on the total amount of the monomers used in the polymerization. It is more preferably at least 1 mol%, particularly preferably at least 1 mol%. Further, the amount of the chain transfer agent used in producing the resist polymer of the present invention is preferably 5 mol% or less, more preferably 2 mol% or less, based on the total amount of the monomers used for the polymerization.
- the polymer of the present invention when it is a copolymer, it may be a random copolymer, an alternating copolymer, or a block copolymer.
- the resist polymer of the present invention usually comprises, in the presence of a polymerization initiator, at least one (meth) acrylate derivative having a cyano group represented by the above formula (5) and an acid-labile group. At least one monomer having a lactone skeleton. Obtained by copolymerizing the monomer composition. In the polymerization using such a polymerization initiator, a radical form of the polymerization initiator is first generated, and chain polymerization of the monomer proceeds from the radical form.
- polymerization initiator used in the production of the resist polymer of the present invention one that efficiently generates radicals by heat is preferable.
- polymerization initiators include, for example, 2,2′-azobisisobutyronitrile, dimethyl-1,2,2′-azobisisobutyrate, 2,2,1-azobis [2- (2-imidazoline Azo compounds such as 2-yl) propane; and organic peroxides such as 2,5-dimethyl-2,5-bis (tert-butylpropoxy) hexane.
- the light transmittance (wavelength: 193 nm) of the resist polymer obtained in lithography As a polymerization initiator to be used, a compound having no aromatic ring in its molecular structure is preferable from the viewpoint of not lowering the transmittance to light as much as possible. Further, in consideration of safety at the time of polymerization, the polymerization initiator to be used preferably has a 10-hour half-life temperature of 60 ° C. or more.
- a chain transfer agent may be used.
- a chain transfer agent it is possible to reduce the amount of the polymerization initiator used when producing a low molecular weight polymer, and to reduce the molecular weight distribution of the obtained polymer.
- the narrower molecular weight distribution is due to the lower production of high molecular weight polymers, which further improves the solubility in resist solvents when used in resists, and also produces microgels and diffuses. Is preferred because it reduces
- Suitable chain transfer agents include, for example, 1-butanethiol, 2-butanethiol, 1-octanethiol, 1-decanethiol, 1-tetradecanethiol, cyclohexanethiol, 2-methyl-11-propane Thiol, 2-mercaptoethanol, 1-thioglycerol and the like.
- a polymer having a radical at the growth terminal is generated, but a chain transfer agent
- the radical at the growth end abstracts the hydrogen of the chain transfer agent, and the growth end becomes a deactivated polymer.
- the chain transfer agent from which hydrogen has been extracted becomes a structure having radicals, that is, a radical form, and the monomer forms chain polymerization again from the radical form. Therefore, a chain transfer residue exists at the terminal of the obtained polymer.
- a r F excimer laser (wavelength: 193 nm)
- the light transmittance of the resulting resist polymer (light of wavelength 193 nm)
- the chain transfer agent to be used one having no aromatic group is preferable from the viewpoint of reducing the transmittance as much as possible.
- the amount of the polymerization initiator to be used is not particularly limited, but is preferably at least 0.3 mol% based on the total amount of the monomers used for copolymerization, in order to increase the yield of the copolymer. From the viewpoint of narrowing the molecular weight distribution, the content is preferably 30 mol% or less based on the total amount of the monomers used for copolymerization. Further, the amount of the polymerization initiator to be used is more preferably at least 0.1 mol%, particularly preferably at least 1 mol%, based on the total amount of monomers used for copolymerization.
- the amount of the chain transfer agent is not particularly limited, but is preferably 0.01% by mole or more based on the total amount of the monomers used in the copolymer, in order to narrow the molecular weight distribution of the copolymer. 0.1 mol% or more is more preferable, and is used for copolymerization because the sensitivity and resolution when using the copolymer as a resist composition and the resist performance such as adhesion to metal surfaces are not reduced. The amount is preferably 30 mol% or less based on the total amount of the monomers. Further, the amount of the chain transfer agent used in producing the resist polymer of the present invention is more preferably 5 mol% or less, particularly preferably 2 mol% or less, based on the total amount of the monomers used for copolymerization.
- the method for producing the polymer of the present invention is not particularly limited, but a polymerization method generally called solution polymerization, in which a monomer is dropped into a polymerization vessel, which is called drop polymerization, is preferable.
- a monomer which becomes a constituent unit of a target polymer by polymerization is used because a polymer having a narrow composition distribution and / or a narrow molecular weight distribution can be easily obtained. May be a solution in which the monomer is dissolved in an organic solvent). It is preferable to produce the polymer of the present invention by a polymerization method called drop polymerization in which the polymerization is carried out under the following conditions.
- an organic solvent is charged into a polymerization vessel in advance, heated to a predetermined polymerization temperature, and then a monomer and a polymerization initiator and, if necessary, a chain transfer agent are dissolved in the organic solvent.
- the monomer solution is dropped into the organic solvent in the polymerization vessel.
- the monomer may be dropped without dissolving in the organic solvent.
- a solution in which the polymerization initiator and, if necessary, the chain transfer agent are dissolved in the monomer is dropped into the organic solvent.
- the monomer may be dropped into the polymerization vessel without previously charging the organic solvent into the polymerization vessel.
- the monomer, the polymerization initiator, and the chain transfer agent can be added alone or in any combination.
- the polymerization temperature in the drop polymerization method is not particularly limited, but is usually preferably in the range of 50 to 150 ° C.
- organic solvent used in the dropping polymerization method a monomer, a polymerization initiator and a polymer to be used, and a solvent capable of dissolving any of the chain transfer agents when a chain transfer agent is used are preferable.
- organic solvent include 1,4-dioxane, isopropyl alcohol, acetone, tetrahydrofuran (hereinafter, also referred to as “THF”), methylethyl ketone (hereinafter, also referred to as “MEK”), and methyliso.
- MIBK butyl ketone
- PGMEA propylene glycol monomethyl ether acetate
- ethyl lactate examples include butyl ketone (hereinafter also referred to as "MIBK”), aptyrolactone, propylene glycol monomethyl ether acetate (hereinafter also referred to as "PGMEA”), and ethyl lactate.
- MIBK butyl ketone
- PGMEA propylene glycol monomethyl ether acetate
- ethyl lactate ethyl lactate
- the monomer concentration of the monomer solution dropped into the organic solvent is not particularly limited, but is preferably in the range of 5 to 50% by mass.
- the amount of the organic solvent to be charged into the polymerization vessel is not particularly limited, and may be appropriately determined. Usually, it is used within the range of 30 to 700% by mass based on the total amount of monomers used for copolymerization.
- the polymer solution produced by a method such as solution polymerization may be used as needed. Dilute to an appropriate solution viscosity with a good solvent such as dioxane, acetone, THF, MEK, MIBK, arptyrolactone, PGMEA, and ethyl lactate, and then add dropwise to a large amount of poor solvents such as methanol and water. To precipitate the polymer. This step is generally called reprecipitation and is very effective for removing unreacted monomers and polymerization initiator remaining in the polymerization solution. If these unreacted substances remain as they are, they may adversely affect the resist performance. Therefore, it is preferable to remove the unreacted substances as much as possible. The reprecipitation step may not be necessary in some cases. Thereafter, the precipitate is separated by filtration and dried sufficiently to obtain the polymer of the present invention. Also, after filtration, the wet powder can be used without drying.
- a good solvent such as dioxane, acetone,
- the produced copolymer solution can be used as a resist composition as it is or after being diluted with an appropriate solvent. At that time, an additive such as a storage stabilizer may be appropriately added.
- the resist composition of the present invention is obtained by dissolving the resist polymer of the present invention as described above in a solvent.
- the chemically amplified resist composition of the present invention is obtained by dissolving the resist polymer and the photoacid generator of the present invention as described above in a solvent.
- the resist polymer of the present invention one type may be used, or two or more types may be used in combination.
- the polymer solution may be used as it is for the resist composition without separating the polymer from the polymer solution obtained by solution polymerization, or the polymer solution may be diluted with an appropriate solvent to form a resist. It can also be used in compositions.
- the solvent for dissolving the resist polymer of the present invention is arbitrarily selected depending on the purpose.
- Solvents that may be restricted by uniformity, appearance or safety include, for example, straight-chain or branched-chain ketones such as methyl ethyl ketone, methyl isobutyl ketone, 2-pentanone, and 2-hexanone.
- Cyclic ketones such as cyclopentanone and cyclohexanone; propylene glycol monomethyl teracetate, propylene glycol monoethyl terecetate, etc.
- Ethylene glycol monoalkyl ether acetates ethylene glycol monoalkyl ether acetates, such as ethylene glycol monomethyl ether acetate; ethylene glycol monoalkyl ether acetate; propylene glycol monomethyl ether Propylene glycol monoalkyl ethers such as propylene glycol monoethyl ether; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, and ethylene glycol monoisopropyl ether; Diethylene glycol alkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol monomethyl ether, diethylene glycol-legetyl ether; ethyl acetate, lactic acid Esters such as ethyl; alcohols such as n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, tert-butyl alcohol, cyclohexanol and 1-o
- the content of the solvent is usually at least 200 parts by mass, more preferably at least 300 parts by mass, based on 100 parts by mass of the resist polymer (polymer of the present invention).
- the content of the solvent is usually 500 parts by mass or less, and 200 parts by mass or less with respect to 100 parts by mass of the resist polymer (the polymer of the present invention). More preferred.
- the resist polymer of the present invention When the resist polymer of the present invention is used for a chemically amplified resist, it is necessary to use a photoacid generator.
- the photoacid generator contained in the chemically amplified resist composition of the present invention can be arbitrarily selected from those usable as an acid generator of the chemically amplified resist composition.
- One photoacid generator may be used, or two or more photoacid generators may be used in combination.
- Examples of such a photoacid generator include an ionic salt compound, a sulfonimide compound, a sulfone compound, a sulfonate compound, a quinonediazide compound, and a diazomethane compound.
- a photoacid generator examples include an ionic salt compound, a sulfonimide compound, a sulfone compound, a sulfonate compound, a quinonediazide compound, and a diazomethane compound.
- sulfonylate Preferred sodium salt compounds such as sodium salt, rhododium salt, phosphonium salt, diazonium salt, and pyridinium salt.
- triphenylsulfonium triflate and triphenylsulfonium hexafluoroantimonate are preferred.
- Trifenyl sulfonium naphthene sulfonate (hydroxyphenyl) benzylmethyl sulfonium toluene sulfonate, diphenyldonium triflate, diphenylodonium pyrene sulfonate, diphenylodonium dodecylbenzenesulfonate, Diphenylbenzene hexafluoroantimonate, P-methylphenyldiphenylsulfonium nonafluoropropane sulfonate, tri (tert-butylphenyl) sulfonium trifluorofluorene sulfate, etc. It is below.
- the content of the photoacid generator is appropriately determined depending on the type of the photoacid generator selected, but is usually 0.1 part by mass with respect to 100 parts by mass of the resist polymer (the polymer of the present invention). And more preferably at least 0.5 part by mass.
- the content of the photoacid generator is usually 20 parts by mass or less, preferably 100 parts by mass or less, based on 100 parts by mass of the resist polymer (polymer of the present invention). More preferred.
- the chemically amplified resist composition of the present invention may contain a nitrogen-containing compound.
- a nitrogen-containing compound By including a nitrogen-containing compound, the resist pattern shape, the stability with time of leaving, and the like are further improved.
- the cross-sectional shape of the resist pattern becomes closer to a rectangle, and the resist film is exposed, heated after exposure (PEB), and left for several hours until the next development process.
- PEB heated after exposure
- the occurrence of deterioration of the cross-sectional shape of the resist pattern when left untreated (elapsed time) is further suppressed.
- any known compounds can be used, but amines are preferable. 2004/000813
- lower aliphatic amine refers to an alkyl or alkyl alcohol amine having 5 or less carbon atoms.
- Examples of the secondary lower aliphatic amine and the tertiary lower aliphatic amine include, for example, trimethylamine, getylamine, triethylamine, di-n-propylamine, tri-n-propylamine, tripentylamine, diethanolamine, triethanolamine. And the like.
- a tertiary alkanolamine such as triethanolamine is more preferable.
- nitrogen-containing compound one kind may be used alone, or two or more kinds may be used in combination.
- the content of the nitrogen-containing compound is appropriately determined depending on the type of the selected nitrogen-containing compound and the like, and is usually 0.1 to 100 parts by mass relative to 100 parts by mass of the resist polymer (the polymer of the present invention).
- the content of the nitrogen-containing compound is preferably at least 1 part by mass.
- the content of the nitrogen-containing compound is usually preferably 2 parts by mass or less based on 100 parts by mass of the resist polymer (the polymer of the present invention).
- the chemically amplified resist composition of the present invention may also contain an organic carboxylic acid, an oxo acid of phosphorus, or a derivative thereof. By incorporating these compounds, it is possible to prevent sensitivity degradation due to the incorporation of the nitrogen-containing compound, and to further improve the resist pattern shape, the stability over time, and the like.
- organic carboxylic acid for example, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are preferable.
- Examples of the oxo acid of phosphorus or a derivative thereof include phosphoric acid such as phosphoric acid, di-n-butyl phosphate and diphenyl phosphate, and derivatives thereof such as ester; phosphonic acid, phosphonic acid Such as phosphonic acids and their esters such as dimethyl ester, di-n-butyl phosphonate, phenylphosphonic acid, diphenyl phosphonate, and dibenzyl phosphonate Derivatives: phosphinic acids such as phosphinic acid and phenylphosphinic acid, and derivatives such as esters thereof, and the like, among which phosphonic acid is preferable.
- One type may be used, or two or more types may be used in combination.
- the content of these compounds is appropriately determined depending on the type of the selected compound and the like, but usually, a resist polymer (a polymer of the present invention) It is preferably 0.01 part by mass or more based on 100 parts by mass. By setting the content of these compounds in this range, the resist pattern shape can be made more rectangular. Further, the content of these compounds (organic rubonic acid, phosphorus oxo acid, or a derivative thereof) is usually 5 parts by mass with respect to 100 parts by mass of the resist polymer (the polymer of the present invention). It is preferred that: By setting the content of these compounds within this range, the enormous loss of the resist pattern can be reduced.
- both the nitrogen-containing compound and the organic carboxylic acid, the oxo acid of phosphorus, or a derivative thereof can be contained in the chemically amplified resist composition of the present invention, or only one of them can be contained. it can.
- the resist composition of the present invention may contain, if necessary, various additives such as a surfactant, other quencher, a sensitizer, an antihalation agent, a storage stabilizer and an antifoaming agent. it can. Any of these additives can be used as long as they are known in the art. The amounts of these additives are not particularly limited, and may be determined as appropriate.
- the copolymer for resist of the present invention may be used as a resist composition for metal etching, photofabrication, plate making, hologram, color filter, retardation film and the like.
- the surface of the substrate to be processed such as a silicon wafer on which a pattern is The bright resist composition is applied by spin coating or the like. Then, the substrate to which the resist composition is applied is dried by a baking process (prebaking) or the like to form a resist film on the substrate.
- the resist film thus obtained is irradiated with light having a wavelength of 25 Onm or less through a photomask (exposure).
- Light used for exposure KrF excimer lasers one, A r F excimer one The one or F 2 excimer one The one in which it is favorable preferred, is especially preferred ArF excimer laser scratch. It is also preferable that the light is exposed by an electron beam.
- the substrate After exposure, the substrate is appropriately heat-treated (post-exposure bake, PEB), the substrate is immersed in an alkaline developer, and the exposed portion is dissolved and removed in the developer (development). Any known alkaline developer may be used. Then, after the development, the substrate is appropriately rinsed with pure water or the like c. Thus, a resist pattern is formed on the substrate to be processed.
- PEB post-exposure bake
- the substrate on which a resist pattern has been formed is appropriately heat-treated (post-baked) to strengthen the resist and selectively etch portions where there is no resist. After the etching, the resist is usually removed using a stripping agent.
- ⁇ 11 Determined by NMR measurement. This measurement was performed using a GSX-400 type FT-NMR (trade name) manufactured by JEOL Ltd., using a deuterated chromate form, deuterated acetone or deuterated sample of about 5% by mass of a resist polymer sample. A solution of hydrogenated dimethyl sulfoxide was placed in a test tube with a diameter of 5 mm0, and the measurement was performed 64 times at a measurement temperature of 40 ° C, an observation frequency of 400 MHz, and single pulse mode.
- a resist composition was prepared as follows, and its physical properties and the like were measured.
- the prepared resist composition solution was spin-coated on a silicon wafer, and prebaked at 120 ° C for 60 seconds using a hot plate to form a resist film having a thickness of 0.4 ⁇ m.
- a post-exposure bake was performed at 120 ° C. for 60 seconds using a photoplate.
- the resist was developed with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide at room temperature, washed with pure water, and dried to form a resist pattern.
- the exposure (mJ / cm 2 ) at which a 0.16 / m line 'and' space pattern mask was transferred to a 0.16 zm line width was measured as sensitivity.
- Minimum size of resist pattern that can be resolved when exposed at the above exposure amount (/ m) Is the resolution.
- JSM-634OF a JM-634 OF product, which covers the 5 m longitudinal edge of a 0.20 ⁇ m resist pattern obtained with the minimum exposure that reproduces a 0.20 ⁇ m resist pattern on the mask.
- a field emission scanning electron microscope (trade name) the distance from the reference line where the pattern side edge should be located was measured at 50 points, and the standard deviation was calculated to calculate 3 ⁇ . A smaller value indicates better performance c
- the vertical cross section of the above 0.20 m resist pattern is observed with a JSM-6340 F-type field emission scanning electron microscope (trade name) manufactured by JEOL Ltd. and has a rectangular cross section. Was evaluated as ⁇ , and those having a convex or concave shape were evaluated as X.
- the number of microgels in the solution immediately after preparation (initial value of microgel) and the number of microgels in the solution after standing at 4 ° C for 1 week (microgel after aging) And were measured using a Rion particle counter. Then, together with the initial value of the microgel, the number of increased microgels calculated by (number of microgels after aging) 1 (initial value of the microgel) was evaluated.
- the number of microgels having a particle size of 0.25 zm or more present in 1 mL of the resist composition solution was measured.
- PGM EA propylene glycol monomethyl ether acetate
- HGBMA Metaloyloxyl-butyrolactone
- MA dMA 2-methacryloyloxy 2-methyladamantane
- THF tetrahydrofuran
- OTD A 4-oxatricyclo [5.2.1. 0 2 ' 6 ] decane-3-one
- EAdMA 2-Ethiladamantane
- CNNA 2- or 3-cyano 5-norbornyl acrylate
- AIBN 2, 2, 1-azobisisobutyronitrile
- Table 1 shows the measurement results of the physical properties of the obtained copolymer A-2.
- E DMA. dodecane 23. 0 parts, CNNMA4. 1 parts, PGMEA79. 4 parts, Apuchi A monomer solution obtained by mixing 34.0 parts of lactone, 0.70 parts of DAIB, and 0.58 parts of n-octylmer force was dropped into the flask at a constant rate over 6 hours using a dropping device. Then, it was kept at 80 ° C for 1 hour. Next, the obtained reaction solution was dropped into about 30 times the amount of methanol while stirring, to obtain a white precipitate (copolymer A-13). The subsequent operations were the same as in Example 1 to obtain a copolymer A-3. Table 1 shows the measurement results of the physical properties of the obtained copolymer A-3.
- Table 1 shows the measurement results of the physical properties of the obtained copolymer A-4.
- Table 1 shows the measurement results of the physical properties of the obtained copolymer A-5.
- PGMEA Under a nitrogen atmosphere, 37.7 parts of PGMEA was placed in a flask equipped with a nitrogen inlet, a stirrer, a condenser, and a thermometer, and the temperature of the hot water bath was raised to 80 ° C with stirring.
- OTDA 18.2 parts, MAdMA 15.9 parts, 1-acryloyloxy-3-hydroxyadaman evening (hereinafter referred to as HAdA) 4.4 parts, CNNMA 6.2 parts, PGMEA67.9 parts, AIBN1
- a monomer solution obtained by mixing 64 parts and 0.58 parts of n-butyl octylmer was dropped into the flask at a constant speed over a period of 6 hours using a dropping device. Hold for 1 hour.
- Table 1 shows the results of measuring the properties of the obtained copolymer A-7.
- Table 1 shows the results of measuring the properties of the obtained copolymer A-8.
- Table 2 shows the measurement results of the properties of the obtained copolymer A-10.
- Table 2 shows the results of measuring the properties of the obtained copolymer A-11.
- PGMEA Under a nitrogen atmosphere, 38.5 parts of PGMEA was placed in a flask equipped with a nitrogen inlet, a stirrer, a condenser, and a thermometer, and the temperature of the hot water bath was raised to 80 ° C with stirring.
- Table 2 shows the results of measuring the properties of the obtained copolymer A-12.
- Table 2 shows the results of measuring the properties of the obtained copolymer A-13.
- DMMB 2-methylene-1,4,4-dimethyl-4-butenolide
- Table 2 shows the results of measuring the properties of the obtained copolymer A-14.
- the monomer solution in which 38 parts were mixed was dropped into the flask at a constant speed over a period of 6 hours using a dropping device, and then kept at 80 ° C for 1 hour.
- the obtained reaction solution was dropped into about 30 times the amount of methanol while stirring, to obtain a white precipitate (copolymer A-15).
- the subsequent operations were the same as in Example 1 to obtain a copolymer A-15.
- Table 2 shows the measurement results of the physical properties of the obtained copolymer A-15.
- TBM t e rt—Petilmer Recipes
- a monomer solution obtained by mixing 32 parts of N1 and 0.18 parts of n-octylmer force drop was dropped into the flask at a constant speed for 6 hours using a dropping device.
- Table 2 shows the measurement results of the physical properties of the obtained copolymer A-16. ⁇ Example 17>
- a monomer solution obtained by mixing 1.32 parts of BN and 0.26 parts of n-butyl octylmer was dropped into the flask at a constant speed over 6 hours using a dropping device.
- Table 3 shows the results of measuring the properties of the obtained copolymer A-19.
- Table 3 shows the results of measuring the properties of the obtained copolymer A-20.
- the monomer solution obtained by mixing 36 parts was dropped into the flask at a constant speed over a period of 6 hours using a dropping device, and then kept at 80 ° C for 1 hour.
- the obtained reaction solution was added dropwise to about 30 times the amount of methanol with stirring to obtain a white precipitate (copolymer A-21).
- Subsequent operations were performed in the same manner as in Example 1 to obtain a copolymer A-21.
- Table 3 shows the measurement results of the physical properties of the obtained copolymer A-21.
- the monomer solution obtained by mixing 50 parts was dropped into the flask at a constant speed over a period of 6 hours using a dropping device, and then kept at 80 ° C for 1 hour. Then, the obtained reaction solution was added dropwise to about 30 times the amount of methanol while stirring to obtain a white precipitate (copolymer A-22). Subsequent operations were performed in the same manner as in Example 1 to obtain a copolymer A-22.
- Table 3 shows the results of measuring the properties of the obtained copolymer A-22.
- Table 3 shows the measurement results of the physical properties of the obtained copolymer A-23.
- Copolymer A-25 was obtained in the same manner as in Example 24 except that the amount of n-octylmercaptan in the monomer solution was changed to 0.58 parts.
- Table 3 shows the measurement results of the properties of the obtained copolymer A-25.
- Copolymer A-26 was obtained in the same manner as in Example 24, except that the amount of n-octyl mercaptan in the monomer solution was changed to 0.38 parts.
- Table 3 shows the measurement results of the properties of the obtained copolymer A-26.
- a monomer solution containing a mixture of 4 parts of PGME A70, 1.32 parts of AIBN, and 0.36 parts of n-butyl dimethyl ether was dropped into the flask over 6 hours at a constant speed using a dropping device. Then, it was kept at 80 ° C for 1 hour. Then, the obtained reaction solution was dropped into about 30 times the amount of methanol while stirring, to obtain a white precipitate (copolymer A-27). Subsequent operations were performed in the same manner as in Example 1 to obtain a copolymer A-27.
- Table 3 shows the measurement results of the physical properties of the obtained copolymer A-27.
- a monomer solution obtained by mixing 2 parts, 0.70 parts of DAIB and 0.58 parts of n-octylmer force drop was dropped into the flask at a constant speed over a period of 6 hours using a dropping device, and then 80 ° C for 1 hour.
- the obtained reaction solution was added dropwise to about 30 times the volume of methanol with stirring to obtain a white precipitate (copolymer B-2).
- the subsequent operations were the same as in Example 1 to obtain a copolymer B-2.
- Table 4 shows the measurement results of the properties of the obtained copolymer B-2.
- Table 4 shows the measurement results of the physical properties of the obtained copolymer B-3.
- AEMA 2'-acetoxylmethacrylate
- Table 4 shows the measurement results of the properties of the obtained copolymer B-4.
- Table 4 shows the results of measuring the properties of the obtained copolymer B-5.
- Table 4 shows the measurement results of the physical properties of the obtained copolymer B-6.
- Copolymer B-7 was obtained in the same manner as in Example 23 except that the amount of n-octyl mercaptan in the monomer solution was changed to 0.14 parts.
- Table 4 shows the measurement results of the properties of the obtained copolymer B-7.
- Sensitivity (mJ m 2 ) 7.1 6.9 7.2 6.9 7,2.6.7 7.0 6.8 7.3.
- Resolution 0.13 0.13 0.13 0.13 0.14 0.13 0.15 0.15 0.13
- Resist pattern Shape OO ⁇ OOO o OO
- the resist composition (Examples 1 to 27) using the resist polymer of the present invention has sufficient sensitivity and resolution, has an excellent resist pattern shape, and has a low line edge roughness. Also, the generation of microgel in the resist solution was small.
- the resist composition using the polymer of Comparative Example 1 containing no structural unit having a cyano group was inferior in line edge roughness, and a lot of gel mouth gel was formed in the resist solution.
- the resist composition using the polymer of Comparative Example 1 containing no structural unit having a cyano group was inferior in line edge roughness, and a lot of gel mouth gel was formed in the resist solution.
- the resist composition using the polymer of Comparative Example 2 containing no structural unit having a cyano group was inferior in the resist pattern shape.
- the resist composition using the polymer of Comparative Example 3 containing no structural unit having a cyano group was inferior in resist pattern shape and line edge roughness, and many microgels were formed in the resist solution. was done.
- the resist composition using the polymer of Comparative Example 4 which did not contain a structural unit having a lactone skeleton was inferior in terms of resist 1, pattern shape and lineage roughness.
- the resist composition using the polymer of Comparative Example 5 in which the constituent unit having a lactone skeleton is different from the resist polymer of the present invention was inferior in the shape of the resist pattern.
- Example 19 comparing Example 19 with Reference Example 1 in which the constituent unit having a lactone skeleton is different, the resist composition using the polymer obtained in Example 19 has a resist pattern shape. It was excellent, and the generation of microgels in the resist solution was also low.
- Example 23 comparing Example 23 with Reference Example 2 having a different mass average molecular weight, the resist composition using the polymer obtained in Example 23 showed less formation of micromouth gel in the resist solution. Was done.
- an organic anti-reflective coating composition (product name: ARC-29A, manufactured by Prue Science) was applied on a silicon wafer (diameter: 200 mm), and was applied on a hot plate. It was baked at 215 ° C for 60 seconds and dried to form an organic antireflection film having a thickness of 7 nm.
- paddle development was performed with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide at 23 ° C. for 30 seconds, washed with pure water for 20 seconds, and dried to form a resist pattern.
- the mask is transferred to 13 onm of Onm (3 OmJ / cm 2) line-and-space upon exposure pattern, resolving power of a trench pattern, it it, 121 nm, a 127 nm, both Good shape
- a maximum dimension and minimum dimension of the trench pattern formed on the wafer were 128 nm, a 125 nm, the difference also was very small c, 120 ° C and a PEB temperature from 125 ° C
- a resist pattern (trench pattern) was formed in the same manner as above except that the temperature was changed to 130 ° C. Then, calculate the average size of the resist pattern formed at each PEB temperature, and When the amount of change in the resist pattern size per unit temperature was determined, it was 1. Onm / ° C, which was extremely small.
- Example 2 was repeated except that the resist polymer (Copolymer A-25) obtained in Example 25 was used instead of the resist polymer (Copolymer A-24) obtained in Example 24.
- a resist pattern was formed in the same manner as in No. 28.
- the resolution of the line and space pattern and the trench pattern when exposed at an exposure dose (3 OmJ / cm 2 ) at which the obtained 130 nm mask is transferred to 130 nm are 119 nm and 13 Onm, respectively, which are both favorable. Shape.
- the maximum and minimum dimensions of the trench pattern formed on the wafer were determined to be 128 nm 131, respectively, and the difference was very small.
- a resist pattern (trench pattern) was formed in the same manner as above except that the PEB temperature was changed from 125 ° C to 120 ° C and 130 ° C. Then, the average size of the resist pattern formed at each PEB temperature was calculated, and the amount of change in the resist pattern size per unit temperature was calculated from that value, which was 1.5 nm / ° C, which was extremely small. .
- Example 11 Except that the resist polymer (copolymer A-26) obtained in Example 26 was used instead of the resist polymer (copolymer A-24) obtained in Example 24. A resist pattern was formed in the same manner as in No. 28.
- the resolution of the line and space pattern and the trench pattern when the obtained 130 nm mask is exposed at the exposure dose (3 OmJ / cm 2 ) transferred to 130 nm is 123 nm 13 Onm, respectively.
- the shape was good.
- the PEB temperature is 125.
- a resist pattern (trench pattern) was formed in the same manner as above except that C was changed to 120 ° C and 130 ° C. Then, the average size of the resist pattern formed at each PEB temperature was calculated, and the amount of change in the resist pattern size per unit temperature was calculated from that value, which was 1.8 nm / ° C, which was very small.
- the resist composition using the resist polymer of the present invention (Examples 28 to 30) has sufficient sensitivity and resolution, is excellent in the shape of the formed resist pattern, and is formed.
- the uniformity of the resist pattern in the wafer surface was also excellent, and the PEB temperature dependence of the resist pattern was small.
- the excellent results as described above were obtained on a substrate having a diameter of 200 mm, and the resist composition using the resist polymer of the present invention (Examples 28-30), A sufficiently uniform resist pattern size can be obtained in the substrate plane.
- Example 24 a copolymer represented by the following formula (20-11) (mass average molecular weight (Mw) 8,800) Using a molecular weight distribution (Mw / Mn) of 1.79), a resist pattern was formed in the same manner as in Example 28 except that the PEB temperature was changed from 125 ° C. to 130 ° C.
- the resolution of the line and space pattern and the trench pattern when exposing the obtained 13 Onm mask at an exposure dose (22 mJ / cm 2 ) transferred to 130 nm are 126 nm and 13 Onm, respectively, which are both favorable.
- the size of each resist pattern formed on the wafer was more varied than those of Examples 28 to 30, and the uniformity over the entire surface of the wafer was poor.
- a resist pattern (trench pattern) was formed in the same manner as above except that the PEB temperature was changed from 130 ° C to 135 ° C. Then, the average size of the resist pattern formed at each PEB temperature was calculated, and the amount of change in the resist pattern size per unit temperature was calculated from that value, which was 5.2 nm / ° C. It was bigger than 28-30. I-no small cow
- the resist composition using the resist polymer of the present invention has high sensitivity, high resolution, good resist pattern shape, low line edge roughness, and low generation of microgel. A fine resist pattern can be stably formed. Therefore, a resist using the resist polymer of the present invention
- the composition can be suitably used for DUV excimer laser lithography or electron beam lithography, particularly lithography using an ArF excimer laser (wavelength: 193 nm).
- the resist composition using the resist polymer of the present invention can obtain a uniform resist pattern size within the substrate surface even on a large substrate having a diameter of 300 mm or more, for example, and the PEB temperature dependence of the resist pattern. Is also small.
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Abstract
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JP2005504741A JP4881002B2 (ja) | 2003-01-31 | 2004-01-29 | レジスト用重合体およびレジスト組成物 |
US10/543,914 US7575846B2 (en) | 2003-01-31 | 2004-01-29 | Resist polymer and resist composition |
US12/496,232 US8092979B2 (en) | 2003-01-31 | 2009-07-01 | Resist polymer and resist composition |
US13/242,879 US8580481B2 (en) | 2003-01-31 | 2011-09-23 | Resist polymer and resist composition |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999050322A1 (fr) * | 1998-03-27 | 1999-10-07 | Mitsubishi Rayon Co., Ltd. | Copolymere, son procede de preparation et composition de produit de reserve |
JPH11352694A (ja) * | 1998-06-10 | 1999-12-24 | Fujitsu Ltd | レジスト材料及びレジストパターンの形成方法 |
JP2000258915A (ja) * | 1999-03-11 | 2000-09-22 | Sumitomo Chem Co Ltd | 化学増幅型ポジ型レジスト組成物 |
JP2001264982A (ja) * | 2000-03-14 | 2001-09-28 | Matsushita Electric Ind Co Ltd | パターン形成材料及びパターン形成方法 |
JP2002202605A (ja) * | 2000-12-28 | 2002-07-19 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2002275215A (ja) * | 2001-01-09 | 2002-09-25 | Mitsubishi Rayon Co Ltd | 重合体、化学増幅型レジスト組成物、および、パターン形成方法 |
JP2003122007A (ja) * | 2001-10-09 | 2003-04-25 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2003233188A (ja) * | 2002-02-08 | 2003-08-22 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0192206A (ja) | 1987-10-02 | 1989-04-11 | Japan Synthetic Rubber Co Ltd | アクリルエステル系重合体 |
JPH01100145A (ja) | 1987-10-13 | 1989-04-18 | Japan Synthetic Rubber Co Ltd | アクリル酸エステル誘導体 |
US5155188A (en) | 1988-12-29 | 1992-10-13 | The B. F. Goodrich Company | Oxide cocatalysts in ring opening polymerization of polycycloolefins |
JPH02189313A (ja) | 1989-01-19 | 1990-07-25 | Hitachi Chem Co Ltd | 単量体組成物及び熱可塑性樹脂の製造法 |
JPH02193958A (ja) | 1989-01-19 | 1990-07-31 | Hitachi Chem Co Ltd | メタルクリル酸エステル及びその製造法 |
JPH02211401A (ja) | 1989-02-13 | 1990-08-22 | Hitachi Chem Co Ltd | 光学部品及び光学素子 |
JP2518037B2 (ja) | 1989-02-15 | 1996-07-24 | 日立化成工業株式会社 | 光ディスク基板 |
KR960003897B1 (ko) * | 1989-03-22 | 1996-03-23 | 유니온 카바이드 케미칼즈 앤드 플라스틱스 캄파니 인코포레이티드 | 희석제인 초임계성 유체와 함께 분무하기에 적합한 전구 피복 조성물 |
JP3008594B2 (ja) | 1990-08-31 | 2000-02-14 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
JP3030672B2 (ja) | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
JP3427133B2 (ja) | 1993-06-01 | 2003-07-14 | 信越化学工業株式会社 | レジスト材料 |
JP3239772B2 (ja) | 1995-10-09 | 2001-12-17 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3546679B2 (ja) | 1997-01-29 | 2004-07-28 | 住友化学工業株式会社 | 化学増幅型ポジ型レジスト組成物 |
JPH10307388A (ja) | 1997-05-06 | 1998-11-17 | Jsr Corp | 感放射線性樹脂組成物 |
JP3819531B2 (ja) | 1997-05-20 | 2006-09-13 | 富士通株式会社 | レジスト組成物及びレジストパターン形成方法 |
US6165678A (en) | 1997-09-12 | 2000-12-26 | International Business Machines Corporation | Lithographic photoresist composition and process for its use in the manufacture of integrated circuits |
JP3693477B2 (ja) | 1997-10-28 | 2005-09-07 | 三井化学株式会社 | 開環メタセシス(共)重合体の水素添加物及びその製造方法 |
TW444027B (en) | 1998-06-30 | 2001-07-01 | Ind Tech Res Inst | Ring-opened polymer prepared from pericyclic olefin and photosensitive composition containing the polymer |
US6692897B2 (en) * | 2000-07-12 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Positive resist composition |
JP4190138B2 (ja) | 2000-08-02 | 2008-12-03 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP2002091003A (ja) * | 2000-09-19 | 2002-03-27 | Tokyo Ohka Kogyo Co Ltd | 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料 |
JP4441104B2 (ja) * | 2000-11-27 | 2010-03-31 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
JP2002244295A (ja) | 2001-02-15 | 2002-08-30 | Jsr Corp | 感放射線性樹脂組成物の溶液および該溶液の保存安定性改善方法 |
JP4517524B2 (ja) | 2001-03-09 | 2010-08-04 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP3642316B2 (ja) * | 2001-06-15 | 2005-04-27 | 日本電気株式会社 | 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法 |
US7005230B2 (en) * | 2003-01-16 | 2006-02-28 | Jsr Corporation | Radiation-sensitive resin composition |
US7575846B2 (en) | 2003-01-31 | 2009-08-18 | Mitsubishi Rayon Co., Ltd. | Resist polymer and resist composition |
WO2005085301A1 (ja) | 2004-03-08 | 2005-09-15 | Mitsubishi Rayon Co., Ltd. | レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物 |
-
2004
- 2004-01-29 US US10/543,914 patent/US7575846B2/en active Active
- 2004-01-29 JP JP2005504741A patent/JP4881002B2/ja not_active Expired - Lifetime
- 2004-01-29 WO PCT/JP2004/000813 patent/WO2004067592A1/ja active Application Filing
- 2004-01-29 KR KR1020057014097A patent/KR100821440B1/ko active IP Right Grant
- 2004-01-30 TW TW093102100A patent/TWI317050B/zh not_active IP Right Cessation
-
2009
- 2009-07-01 US US12/496,232 patent/US8092979B2/en not_active Expired - Lifetime
-
2011
- 2011-09-23 US US13/242,879 patent/US8580481B2/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999050322A1 (fr) * | 1998-03-27 | 1999-10-07 | Mitsubishi Rayon Co., Ltd. | Copolymere, son procede de preparation et composition de produit de reserve |
JPH11352694A (ja) * | 1998-06-10 | 1999-12-24 | Fujitsu Ltd | レジスト材料及びレジストパターンの形成方法 |
JP2000258915A (ja) * | 1999-03-11 | 2000-09-22 | Sumitomo Chem Co Ltd | 化学増幅型ポジ型レジスト組成物 |
JP2001264982A (ja) * | 2000-03-14 | 2001-09-28 | Matsushita Electric Ind Co Ltd | パターン形成材料及びパターン形成方法 |
JP2002202605A (ja) * | 2000-12-28 | 2002-07-19 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2002275215A (ja) * | 2001-01-09 | 2002-09-25 | Mitsubishi Rayon Co Ltd | 重合体、化学増幅型レジスト組成物、および、パターン形成方法 |
JP2003122007A (ja) * | 2001-10-09 | 2003-04-25 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2003233188A (ja) * | 2002-02-08 | 2003-08-22 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006008600A (ja) * | 2004-06-25 | 2006-01-12 | Mitsubishi Rayon Co Ltd | (メタ)アクリル酸エステル、その製造方法、およびその重合体 |
CN1976962B (zh) * | 2004-09-10 | 2010-06-23 | 三菱丽阳株式会社 | 抗蚀剂用聚合物、抗蚀剂用聚合物的制造方法、抗蚀剂组合物、及形成有图案的基板的制造方法 |
JP2006126350A (ja) * | 2004-10-27 | 2006-05-18 | Jsr Corp | 感放射線性樹脂組成物 |
JP4513501B2 (ja) * | 2004-10-27 | 2010-07-28 | Jsr株式会社 | 感放射線性樹脂組成物 |
US7687219B2 (en) | 2005-11-08 | 2010-03-30 | Fujifilm Corporation | Positive resist composition and pattern formation method using the positive resist composition |
EP1783550A1 (en) * | 2005-11-08 | 2007-05-09 | Fujifilm Corporation | Positive resist composition and pattern formation method using the positive resist composition |
EP1835340A1 (en) * | 2006-03-17 | 2007-09-19 | FUJIFILM Corporation | Positive resist composition and pattern formation method using the positive resist composition |
US7442490B2 (en) | 2006-03-17 | 2008-10-28 | Fujifilm Corporation | Positive resist composition and pattern formation method using the positive resist composition |
JP2008214288A (ja) * | 2007-03-06 | 2008-09-18 | Mitsubishi Rayon Co Ltd | (メタ)アクリル酸エステルの製造方法 |
JP2009134088A (ja) * | 2007-11-30 | 2009-06-18 | Jsr Corp | 感放射線性樹脂組成物 |
JP2013195436A (ja) * | 2012-03-15 | 2013-09-30 | Mitsubishi Rayon Co Ltd | レジスト材料、レジスト組成物、パターンが形成された基板の製造方法、およびレジスト材料の評価方法 |
KR20140145986A (ko) | 2013-06-14 | 2014-12-24 | 미쯔비시 레이온 가부시끼가이샤 | 레지스트용 공중합체 및 레지스트용 조성물 |
US9540468B2 (en) | 2013-06-14 | 2017-01-10 | Mitsubishi Rayon Co., Ltd. | Resist copolymer and resist composition |
Also Published As
Publication number | Publication date |
---|---|
US20060127801A1 (en) | 2006-06-15 |
JPWO2004067592A1 (ja) | 2006-05-18 |
US20120034561A1 (en) | 2012-02-09 |
TW200421036A (en) | 2004-10-16 |
KR100821440B1 (ko) | 2008-04-10 |
US8580481B2 (en) | 2013-11-12 |
KR20050101189A (ko) | 2005-10-20 |
US7575846B2 (en) | 2009-08-18 |
TWI317050B (en) | 2009-11-11 |
US20090263743A1 (en) | 2009-10-22 |
US8092979B2 (en) | 2012-01-10 |
JP4881002B2 (ja) | 2012-02-22 |
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