WO1993024955A1 - Configuration de transistors de puissance refroidie par fluide - Google Patents

Configuration de transistors de puissance refroidie par fluide Download PDF

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Publication number
WO1993024955A1
WO1993024955A1 PCT/DE1993/000465 DE9300465W WO9324955A1 WO 1993024955 A1 WO1993024955 A1 WO 1993024955A1 DE 9300465 W DE9300465 W DE 9300465W WO 9324955 A1 WO9324955 A1 WO 9324955A1
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WO
WIPO (PCT)
Prior art keywords
cooling fluid
power transistor
arrangement according
cooling
semiconductor element
Prior art date
Application number
PCT/DE1993/000465
Other languages
German (de)
English (en)
Inventor
Dieter Lutz
Original Assignee
Mannesmann Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19924217289 external-priority patent/DE4217289C2/de
Application filed by Mannesmann Ag filed Critical Mannesmann Ag
Priority to US08/341,556 priority Critical patent/US5606201A/en
Priority to EP93909798A priority patent/EP0642698B1/fr
Priority to DE59303891T priority patent/DE59303891D1/de
Publication of WO1993024955A1 publication Critical patent/WO1993024955A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/02—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by influencing fluid boundary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
    • H02K11/30—Structural association with control circuits or drive circuits
    • H02K11/33—Drive circuits, e.g. power electronics
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K9/00—Arrangements for cooling or ventilating
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K9/00—Arrangements for cooling or ventilating
    • H02K9/19—Arrangements for cooling or ventilating for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil
    • H02K9/197—Arrangements for cooling or ventilating for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil in which the rotor or stator space is fluid-tight, e.g. to provide for different cooling media for rotor and stator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • Semiconductor valves are widely used to control electrical devices and machines. Decisive for the type of used. Valve is on the one hand the size of the power to be controlled and on the other hand the maximum operating frequency. Thyristors and triacs are used for mains frequency, i.e. in the order of 50 Hz, and allow power controls up to the order of 10 megawatts. For a large number of application folds, particularly in the control of electrical machines, higher switching frequencies up to close to the mega-hertz range are required. Power transistors are used for this type of application. BIMOS power transistors and IGBT power transistors (unsulated gate bipolar transistor) can be used in the frequency range around 10 kHz with powers in the range between 10 and 100 kW. Towards higher frequencies, but at lower powers, are common
  • MOSFET power transistors used. Power semiconductor elements have to be cooled. The temperatures in the active region of the semiconductor element must not exceed
  • the semiconductor substrate is provided with a base metal plating overlapping the entire active region of the substrate, at least on one side, which, depending on the type, forms the collector or the drain electrode.
  • the remaining electrodes of the transistor, ie base and emitter or gate or source electrode, are on the opposite
  • Power transistors connect to the flat base metal plating a fluid-cooled heat sink arrangement, which dissipates the heat loss of the active region of the transistor through the semiconductor substrate and the base metal plating. Since the temperature in the active region must be kept uniformly within the predetermined limit values, it is important that the heat sink arrangement adjoins the semiconductor substrate of the semiconductor element in a planar manner with uniform heat transfer properties. A direct connection of the heat sink to the semiconductor substrate is generally not possible in view of the high voltages (1000 V and more) and high currents (for example 100 amperes), so that the semiconductor substrate is on an insulating carrier
  • Semiconductor element must be derived in the cooling arrangement. So it is common to apply the semiconductor element on a copper-clad ceramic plate and the ceramic plate with the
  • the steel plate in turn is joined with a Interlayer of a thermal paste on the example
  • the contact brushes each consist of a large number of individual pieces of wire parallel to one another, which are cooled by the cooling fluid flowing along the semiconductor element. However, the contact brushes do not allow a flat heat dissipation, such as that used for cooling the semiconductor element of a power transistor
  • DE-A-41 01 205 proposes water, air, oil or a hydrocarbon-containing coolant as the cooling fluid.
  • the invention is called a fluid-cooled
  • the invention is based on a fluid-cooled power transistor arrangement, in particular for electrical valve arrangements, which comprises:
  • a plate-shaped transistor semiconductor element which has on a first of its flat sides a metal electrode covering the entire flat side, closed surface materially connected to the semiconductor element and on its second flat side several materially spaced from each other on the
  • the semiconductor element has attached connections,
  • control and protective shading for the semiconductor element is also arranged on the insulating support and
  • the invention is based on the idea of conventional
  • the metal electrode should be cohesive and preferably be connected to the insulating support over the entire surface. In terms of its surface area, it should protrude the surface of the semiconductor element as clearly as possible and should preferably be at least 50% larger than the flat side of the semiconductor element. In addition to its electrical function, the metal electrode has a further important function, since it not only has to absorb and transmit the heat quickly, but also has to distribute it over the surface. Call this way, a uniform cooling of the
  • the cooling fluid can be a gas, preferably a pressurized gas, such as nitrogen, or a liquid, such as water or oil, especially mineral-based or paraffin-based oil, or a synthetic oil; but it can also be a gas, preferably a pressurized gas, such as nitrogen, or a liquid, such as water or oil, especially mineral-based or paraffin-based oil, or a synthetic oil; but it can also be a gas, preferably a pressurized gas, such as nitrogen, or a liquid, such as water or oil, especially mineral-based or paraffin-based oil, or a synthetic oil; but it can also be a
  • Act two-phase fluid preferably a refrigerant or CO 2 .
  • Semiconductor element on the same insulating support has a number of advantages. Not only is there a thermal coupling of the components involved, but there is also no need for separate cooling of the control and protective circuitry. The necessary
  • Connection lines are minimized, which is good for interference immunity. Only a small number of connecting lines lead to the outside.
  • the invention is particularly suitable for IGBT power transistors, but also for MOSFET power transistors that operate at high
  • Operating frequencies can switch powers in the range of 100 kW and more and in particular currents of 5 - 100 A at voltages of 100 - 1000 v.
  • the insulating support is used to fasten the semiconductor element.
  • the insulating carrier can be a carrier plate made of insulating material, in particular ceramic, on which the
  • the insulating support can also be designed as a metal plate provided with an insulating layer on at least one flat side, that is to say, for example, as a metal plate provided with an insulating oxide layer.
  • the latter configuration is particularly advantageous because the metal plate can simultaneously form the metal electrode integrally.
  • the semiconductor element can be arranged completely in the cooling fluid channel, so that the cooling fluid both on the side of the insulating carrier, which is expediently designed as a plate, and on that
  • Insulator forms a wall of the cooling fluid channel. This configuration is particularly expedient if the insulating support has several
  • Cooling fluid forced flow arranged behind one another jointly carries, since in this way several electrical valves, for example in the form of one or more half or full bridges, can be constructed in modules.
  • Particularly simple solutions are achieved if at least two opposite walls of the cooling fluid channel are formed by plate-shaped insulating supports each carrying at least one semiconductor element.
  • the two opposite insulating supports preferably carry an equal number of semiconductor elements.
  • it is sufficient if the mutually opposite insulating supports are connected by sealing strips to form a cooling fluid channel which is closed in the circumferential direction.
  • Semiconductor elements can be arranged on the inside of the cooling fluid channel or also on the outside, the latter design having the advantage that it can be connected more easily.
  • the usually plate-shaped insulating support overlaps the semiconductor element in a closed area.
  • the insulating carrier in contrast to insulating carriers of conventional power transistors, can also be designed such that it only partially overlaps with the semiconductor element, preferably just enough that the semiconductor element can be permanently attached to the insulating carrier. This has the advantage that the flat side of the metal electrode
  • the insulating support which in turn can be an insulating material plate, is expediently provided with a continuous soot saving, on the edges of which the semiconductor element is attached and at least with its first
  • the insulating support can also extend transversely to the first flat side of the semiconductor element
  • Insulating carrier only partially with the flat sides of the
  • the insulating support is designed as a profile body which has at least one or more
  • Power transistor includes.
  • the insulating carrier used to form the cooling fluid channel can, in addition to the side walls of the cooling fluid channel running transversely to the semiconductor element, also form parts of the walls running in the plane of the semiconductor element.
  • Semiconductor elements can be attached to the profile body separately and separately from one another. After the semiconductor elements, however According to conventional manufacturing methods, a larger number of common semiconductor substrates are produced, in a preferred embodiment it is provided that a plurality of semiconductor elements connected in one piece to each other are attached to the profile body. This facilitates the sealing of the cooling fluid channel.
  • Semiconductor elements can be combined to form a module, provides that at least two opposite walls of the cooling fluid are essentially completely by at least one
  • sealing strips are connected by sealing strips to form a cooling fluid channel which is closed in the circumferential direction.
  • the sealing strips can be formed by walls, the height of which may exceed the width of the semiconductor elements;
  • the sealing strips can also be comparatively flat strips.
  • the cooling fluid flow is a forced flow to ensure adequate heat transfer.
  • Preventing contamination or contamination of the semiconductor element or the insulating carrier comprises the fluid cooling arrangement
  • cooling fluid expediently a closed cooling fluid circuit in which the cooling fluid successively through the cooling fluid channel and a cooler, i.e. a heat exchanger that emits the heat to the outside.
  • a cooler i.e. a heat exchanger that emits the heat to the outside.
  • Cooling fluid circuit preferably an evaporator and a condenser, the cooling fluid channel forming the evaporator.
  • the cooling capacity can be increased if the insulating support, on its side facing away from the semiconductor element and exposed to the cooling fluid flow, is provided with a structure which increases its heat exchange surface, in particular ribs or projections.
  • a structure which increases its heat exchange surface in particular ribs or projections.
  • Heat exchange surfaces in cooling arrangements such as heat sinks or the like, are known.
  • the invention relates to measures by which the cooling capacity of the fluid cooling arrangement can be increased.
  • Line suUhe fluid cooling design can not only be used in a power transistor arrangement of the type explained above, but is generally suitable for cooling
  • Hat conductor elements possibly also those with indirect cooling via a fluid-cooled heat sink.
  • the second aspect of the invention it is provided that at least part of the wall surface of the cooling fluid channel, which is exposed to the cooling fluid flow, or in the case of a power transistor arrangement according to the type explained above, at least part of the surface of the insulating carrier or the
  • Cooling fluid flow boundary layer reducing surface microstructure is provided.
  • the invention is based on the consideration that the cooling effect of the cooling fluid flow is greater, the smaller the thickness of the flow boundary layer within which the cooling fluid flow is subjected to shear and braked. Surprisingly, it has been shown that microstructures that reduce surface friction bring about an improvement in the cooling effect of a cooling fluid flow since they reduce the boundary layer thickness. Microstructures that reduce the friction of liquids on surfaces are known and have been developed studied on the skin of sharks (D. Bechert and
  • Microstructures have been shown to be formed as a rib pattern with essentially parallel micro-ribs elongated in the flow direction of the cooling fluid flow, in particular when the micro-ribs have backs that taper at least approximately to a cutting edge.
  • the height of the ribs and their transverse distance is
  • the cooling fluid is expediently a one-component system.
  • Figure 1 is a partially sectioned, perspective
  • Figure 5 is a perspective view of a
  • Figure 5 is a sectional view of the module, seen along a line VI-VI in Figure 5;
  • Figure 7 is a sectional view of a variant of the module
  • FIG. 8 shows a sectional view of a structural unit consisting of several modules
  • Figure 9 is a schematic representation of a
  • Figure 10 is a schematic representation of a
  • Figure 11 is a schematic representation of a cooling arrangement with gaseous cooling fluid for one
  • FIG. 12 shows a perspective illustration of a surface
  • FIG. 13 shows a variant of the surface microstructure
  • Figure 14 is a sectional view through the surface microstructure, seen along the line
  • FIG. 1 shows a representation in which the thickness ratios of the individual components are not to scale
  • Power transistor module here an IGBT module, with a first chip or semiconductor element 1 with a transistor circuit comprising a plurality of power transistors and a second chip or
  • Semiconductor element 3 which contains the control electronics and protective circuit for the power transistors and is connected to the first semiconductor element 1 via connecting lines 5.
  • the semiconductor elements 1, 3 are firmly bonded to a metal plating 7, for example eutectically produced, in particular consisting of copper.
  • the metal plating 7 forms the collector of the power transistors of the semiconductor element 1 and is the same as with the semiconductor element 1 with a ceramic insulating plate 9 cohesively, flatly and homogeneously connected.
  • the insulating plate 9 is partially held on the edge in rails 11 of a cooling fluid channel 13 which is closed in the circumferential direction, in such a way that both the flat side of the semiconductor element 1 facing away from the insulating plate 9 and the flat side of the insulating plate 9 facing away from the semiconductor element 1 of a cooling fluid flow indicated by arrows 15 is exposed.
  • Control lines 17 designed as thin wires and designed as copper strips
  • Busbars 19 connect the circuits of the semiconductor elements 1, 3 to connections 21 arranged on the outside of the cooling channel 13.
  • the semiconductor element 1 is essentially directly exposed to the cooling fluid flow 15 as far as the heat transfer is concerned, so that it is from both sides is cooled over the entire surface.
  • a high power density can be achieved in this way. Since only the metal plating 7 is the only one between the semiconductor element 1 and the insulating plate 9
  • the rail 11 is preferably elastic and insulating (e.g. made of an elastomer).
  • a plurality of IGBT modules can be arranged one behind the other in the flow direction 15 on a common insulating plate, as is indicated at 23. It goes without saying that the cooling fluid need not be passed through the cooling channel 13 on both sides of the insulating plate 9. In individual cases, it may be sufficient if a cooling fluid flows through only on the side facing away from the semiconductor elements 1, 3 between the insulating plate 9 and the cooling channel 13. Alternatively, too
  • Cooling channel 13 Only the part of the semiconductor elements 1, 3 covering Cooling channel 13 may be present or used for the cooling fluid flow. It goes without saying that instead of IGBT modules, the semiconductor elements 1, 3 can also be implemented with other types of power transistor, for example bipolar power transistors or
  • control circuit provided on the semiconductor element 3 can optionally also be an external electronic one
  • Figure 2 shows a variant of the IGBT module, which differs from the structure of Figure 1 only in that the material cohesively and completely fixed on the ceramic insulating plate 9a via the metallization 7a, again plate-shaped semiconductor elements 1a, 3a except for the contact points of the 5 control lines or the contact strips 19a are covered with a thin protective layer 25 which protects the active zone of the semiconductor elements 1a, 3a from contamination with the cooling fluid.
  • the protective layer 25 can be, for example
  • FIG. 3 shows a variant of an IGBT module, the semiconductor elements 1b, 3b of which are fixed to a metal surface 7b, for example a copper plate, on a metal plate 7b corresponding to the function after the metallization 7.
  • the metal plate 7b is outside of the regions of the semiconductor elements 1b, 3b, but at least on the flat side facing away from the semiconductor elements 1b, 3b Insulating layer, for example a thin oxide layer 9b.
  • the metal plate 7b takes over in addition to the electrode function
  • FIG. 4 shows a variant in which the semiconductor elements 1c, 3c are arranged over the entire area on a metallization 7c, which at the same time has an electrode function.
  • the insulating plate 9c is provided with a continuous recess 27, at least overlapped by the semiconductor element 1c containing the power transistors, through which the cooling fluid is in direct heat exchange contact with the
  • the cooling duct together with the insulating plate 9c can also have the shape of a profile tube 13c, here a possibly one-piece rectangular tube, on which the semiconductor elements 1c, 3c are subsequently attached and from the outside. It is understood that such
  • Cooling channel designs can also be used in the variants of FIGS. 1 to 3.
  • Figure 5 shows an embodiment that allows several
  • IGBT modules each of which is the same as that previously discussed
  • the module generally designated 29 comprises two mutually parallel, made of ceramic material insulating plates 9d, which along their longitudinal edges by preferably elastic sealing strips 31 to a closed in the circumferential direction Cooling channel 13d are connected. Arrows 15d again indicate the
  • Each of the two insulating plates 9d carries on its flat side remote from the cooling channel a plurality of semiconductor elements 1d arranged one behind the other in the flow direction 15d, each of which forms a separate IGBT valve.
  • the number of semiconductor elements 1d on each of the two insulating plates 9d is the same.
  • semiconductor elements 1d are in turn positively applied over the entire surface of the insulating plates 9d via metallizations 7d.
  • the connections can be seen at 19d.
  • the protection and control circuits for the IGBT modules are not shown separately, as in FIGS. 6-8. It goes without saying that the variants of FIGS. 2 to 4 can also be used with the module 29.
  • Semiconductor elements of the type in question are usually produced several times next to one another on semiconductor substrate wafers in the same design, if necessary, several of the
  • Semiconductor elements 1d can be connected to one another in one piece, as indicated at 33 in FIG.
  • FIG. 7 shows a further variant which is based on semiconductor elements 1e which are integrally connected to one another.
  • the semiconductor elements 1e of several electrical valves in each case are cut out together from the above-mentioned substrate disk and with a
  • metal electrode 7e Metallization (metal electrode 7e) provided.
  • the metal electrodes 7e have an electrical one on the side facing the cooling fluid
  • the semiconductor element plates 1e are arranged parallel to one another and are connected to one another via sealing spacer strips 31e. Together with the spacer strips 31e, the semiconductor element plates 1e delimit a closed one in the circumferential direction Cow channel 13e.
  • the connections of the electric valves are indicated at 19e.
  • FIG. 8 shows schematically how several of the modutes 29 according to FIGS. 5 to 7 can be combined to form one structural unit.
  • the modules 29f are held in a common housing 35 parallel to one another in elastic rails 37. Its cooling duct 13f is connected at one end to a common cooling fluid supply duct 39 and at the other end to a common cooling fluid discharge duct 41. Supporting webs 43, which are arranged in the module level, are assigned to the modules 29f
  • connection organs 45 are provided.
  • the connection elements 45 serve to connect the control lines and busbars and, as indicated by lines 19f, are connected to the semiconductor elements 1f of the modules 29f.
  • the cooling fluid can be a gas under atmospheric pressure, for example nitrogen, a liquid, such as water, or an oil, in particular a mineral-based oil, paraffin-based or a synthetic oil.
  • a liquid such as water
  • an oil in particular a mineral-based oil, paraffin-based or a synthetic oil.
  • two-phase fluids such as refrigerants or CO 2 are also suitable.
  • the cooling fluid is circulated through the cooling channel in a forced flow.
  • FIG. 9 shows an exemplary embodiment of a cooling arrangement with a liquid as the cooling fluid.
  • the coolant is fed by a pump 47 via a cooler or heat exchanger 49 to the cooling channel 13g in the circuit.
  • the cooling arrangement comprises a temperature control circuit 51, which uses a temperature sensor 53 to measure the temperature of 1g
  • an expansion tank for coolant is indicated at 59.
  • FIG. 10 shows a variant in which a two-phase refrigerant is used to cool the semiconductor element 1h.
  • a two-phase refrigerant is used to cool the semiconductor element 1h.
  • Heat pump the refrigerant compressed by a compressor 61 is cooled and liquefied in a condenser 63, for example by means of a fan 65.
  • the cooling channel 13h forms an evaporator in which the liquid refrigerant is introduced via a nozzle 67 or the like and is evaporated by absorbing heat.
  • the use of the refrigerant as the cooling fluid allows a more compact construction of the cooling arrangement.
  • Figure 11 shows a closed one for completeness
  • Compressor 69 is compressed before it is subsequently cooled in a cooler or heat exchanger 72 and then the cooling channel 13i for the
  • Insulating plates can be improved, in particular in the case of liquids as cooling fluid, by surface microstructures which reduce the boundary layer thickness of the cooling fluid.
  • the boundary layer is the area of the cooling fluid flow in which the flow velocity is reduced by the friction and fluid adhesion to the wall surface. It has been shown that "shark skin" -like surface structures not only reduce fluid friction on the wall surface, but also reduce the boundary layer thickness. With decreasing boundary layer thickness the distance between the heat-emitting surfaces and the flowing regions of the heat-absorbing cooling fluid shortens.
  • FIG. 12 shows an example of such a surface microstructure that reduces the boundary layer thickness.
  • the microstructure consists of a plurality of ribs 71 which are parallel to one another and run in the flow direction 15k of the cooling fluid, the side flanks of which taper in a wedge shape to form a cutting-like back 73.
  • the ribs 71 merge into one another in concavely curved grooves.
  • the height of the ribs and their distance from one another is preferably less than the boundary layer thickness.
  • the rib shape shown in FIG. 12 has proven to be expedient; however, other rib shapes are also useful, such as ribs with a rounded back or trapezoidal ribs or the like.
  • FIGS. 13 and 14 show further boundary layer-reducing surface structures. These figures show a plan view of diamond-shaped knobs or elevations 75, which rise in a wedge shape in planes running perpendicular to the surface to be cooled in the flow direction 15 l of the cooling fluid.
  • the roof surfaces formed by the elevations 75 can be flat or can also be provided with micro-ribs similar to FIG. 12, which is indicated at 71 l.
  • the elevations 75 can also have other, generally polygonal contours. Triangular shapes with one of their corners are also suitable
  • valve structures according to the invention are in the order of the boundary layer thickness.
  • a major advantage of valve structures according to the invention is that the overall space requirement can be reduced due to the improved cooling.
  • the electric valves can thus be accommodated better than before in spatial proximity to the electrical devices to be controlled. This is of particular advantage in the case of electrical machines, for example electrical motors or electrical generators which are to be switched by the electrical valves

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Motor Or Generator Cooling System (AREA)

Abstract

L'invention concerne une configuration de transistors de puissance refroidie par fluide, dont l'élément semiconducteur (1) est disposé sur un support isolant (9) se présentant surtout sous forme de plaque, par l'intermédiaire d'une électrode en métal (7). Le côté plat de l'élément semiconducteur (1) opposé au support isolant (9) et/ou le côté du support isolant (9) opposé à l'élément semiconducteur (1) est en contact direct d'échange thermique avec un fluide de refroidissement en circulation forcée dans un canal de fluide de refroidissement (13). Le support isolant (9) tout comme l'élément semiconducteur (1) peuvent constituer des zones de paroi du canal du fluide de refroidissement (13). Les zones de paroi à refroidir qui sont en contact avec le fluide de refroidissement peuvent présenter une microstructure superficielle réduisant l'épaisseur de la couche marginale du flux du fluide de refroidissement, afin d'améliorer la transmission thermique. L'amélioration de l'action réfrigérante réduit l'encombrement requis, de manière à ce que les électrovannes puissent être placées à proximité immédiate de l'appareil électrique à commuter, ce qui présente un avantage notable pour les moteurs électriques, afin de réduire l'inductance d'amenée. Les moteurs électriques et les électrovannes sont avantageusement refroidis par un circuit de fluide de refroidissement commun.
PCT/DE1993/000465 1992-05-25 1993-05-24 Configuration de transistors de puissance refroidie par fluide WO1993024955A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US08/341,556 US5606201A (en) 1992-05-25 1993-05-24 Fluid-cooled power transistor arrangement
EP93909798A EP0642698B1 (fr) 1992-05-25 1993-05-24 Configuration de transistors de puissance refroidie par fluide
DE59303891T DE59303891D1 (de) 1992-05-25 1993-05-24 Fluidgekühlte leistungstransistoranordnung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19924217289 DE4217289C2 (de) 1992-05-25 1992-05-25 Fluidgekühlte Leistungstransistoranordnung
DEP4217289.6 1992-05-25

Publications (1)

Publication Number Publication Date
WO1993024955A1 true WO1993024955A1 (fr) 1993-12-09

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PCT/DE1993/000465 WO1993024955A1 (fr) 1992-05-25 1993-05-24 Configuration de transistors de puissance refroidie par fluide
PCT/DE1993/000466 WO1993024983A1 (fr) 1992-05-25 1993-05-24 Machine electrique munie de valves a semi-conducteurs

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PCT/DE1993/000466 WO1993024983A1 (fr) 1992-05-25 1993-05-24 Machine electrique munie de valves a semi-conducteurs

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US (1) US5606201A (fr)
EP (2) EP0642698B1 (fr)
JP (2) JP2532352B2 (fr)
DE (2) DE59302279D1 (fr)
WO (2) WO1993024955A1 (fr)

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Also Published As

Publication number Publication date
EP0642703B1 (fr) 1996-04-17
JPH07507438A (ja) 1995-08-10
WO1993024983A1 (fr) 1993-12-09
JPH07507658A (ja) 1995-08-24
JP2532352B2 (ja) 1996-09-11
EP0642698A1 (fr) 1995-03-15
EP0642703A1 (fr) 1995-03-15
JP2660879B2 (ja) 1997-10-08
DE59303891D1 (de) 1996-10-24
DE59302279D1 (de) 1996-05-23
EP0642698B1 (fr) 1996-09-18
US5606201A (en) 1997-02-25

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