US5606201A - Fluid-cooled power transistor arrangement - Google Patents
Fluid-cooled power transistor arrangement Download PDFInfo
- Publication number
- US5606201A US5606201A US08/341,556 US34155694A US5606201A US 5606201 A US5606201 A US 5606201A US 34155694 A US34155694 A US 34155694A US 5606201 A US5606201 A US 5606201A
- Authority
- US
- United States
- Prior art keywords
- power transistor
- transistor arrangement
- insulating substrate
- semiconductor component
- cooling fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/02—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by influencing fluid boundary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
- H02K11/33—Drive circuits, e.g. power electronics
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K9/00—Arrangements for cooling or ventilating
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K9/00—Arrangements for cooling or ventilating
- H02K9/19—Arrangements for cooling or ventilating for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil
- H02K9/197—Arrangements for cooling or ventilating for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil in which the rotor or stator space is fluid-tight, e.g. to provide for different cooling media for rotor and stator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Definitions
- the invention relates generally to the field of fluid cooling of semiconductor components and in particular to a fluid-cooled power transistor arrangement.
- valves In order to control electric devices and machines, semiconductor valves are used in great numbers.
- the type of valve to be used is determined, first of all, by the quantity of power to be controlled and, secondly, by the maximum operating frequency.
- Thyristors and triacs are used at network frequencies, i.e., on the order of 50 Hz, and permit power control to on the order of 10 megawatts. In many application cases, however, especially in the control of electric machines, higher switching frequencies up to nearly the megahertz range are required.
- power transistors are used. In the frequency range around 10 kHz at powers on the order of between 10 and 100 kW, BIMOS power transistors and IGBT (Insulated Gate Bipolar Transistor) power transistors are used. Moving toward higher frequencies, but at lower powers, MOSFET power transistors are normally used.
- the semiconductor substrate has, on at least one of its sides, a base metal plating which overlaps in planar fashion the entire active region of the substrate and, depending on the type, forms the collector or the drain electrode.
- the other electrodes of the transistor i.e., the base electrode and emitter or the gate or source electrode, are accessible on the opposite flat side of the semiconductor substrate.
- a fluid-cooled heat sink arrangement is attached to the flat base metal plating and dissipates the waste heat of the active region of the transistor through the semiconductor substrate and the base metal plating. Because the temperature in the active region must be maintained uniformly within the given limit values, it is vital that the heat sink arrangement be attached to the semiconductor substrate of the semiconductor element flatly and with uniform heat exchange characteristics. As a rule, a direct connection of the heat sink to the semiconductor substrate is not possible in view of the high voltages (1000 V and more) and high currents (e.g. 100 amperes), which means that the semiconductor substrate must be arranged on an insulating substrate via which, in previous power transistor arrangements, the waste heat has had to be dissipated from the semiconductor component into the cooling arrangement.
- a method is known of providing the supply bands attached to the side away from the substrate with heat sinks, which strengthen the cooling of the active region of the semiconductor component (EP-A-252 429 and EP-A-449 435).
- a method is known (EP-A-260 370) of attaching a heat sink equipped with cooling ribs in a material-tight fashion to the flat side of the semiconductor component away from the active area and exposing the cooling ribs to a cooling air flow.
- DE-A-41 01 205 a method is known from DE-A-41 01 205 of arranging the boardlike semiconductor component of a power diode or a power thyristor in a coolant channel and contacting it on both sides by flexible contact brushes.
- Each contact brush consists of a multiplicity of wire pieces, individually parallel to one another, which are cooled by the cooling fluid flowing along the semiconductor component.
- the contact brushes do not permit any surface heat dissipation, as would be required for cooling the semiconductor element of a power transistor.
- the cooling fluid be water, air, oil or a cooling agent with hydrocarbon content.
- the object of the invention is to create a fluid-cooled power transistor arrangement in which the uniform cooling of the semiconductor component of the power transistor arrangement is provided for more reliably than in the past.
- the invention starts from a fluid-cooled power transistor arrangement, especially for electric valve arrangements, which includes:
- a boardlike transistor semiconductor component which carries on the first of its flat sides a metal electrode connected to the semiconductor component in closed-surface and material-tight fashion and covering the entire flat side, and on its second flat side carries a plurality of terminals attached to the semiconductor element at a distance from one another and in a material-tight manner;
- a fluid cooling arrangement with a coolant channel and a means to produce a forced flow of a cooling fluid in the coolant channel, which is in direct heat exchange contact with at least one of the flat sides of the semiconductor element.
- control and protective wiring for the semiconductor component is also arranged on the insulating substrate;
- the insulating substrate and/or the semiconductor component is exposed directly with at least one of its flat sides to the forced cooling fluid flow in the coolant channel, whereby the contact with the cooling fluid essentially occurs over the entire surface of the flat side.
- the invention is based on the idea of omitting the supporting plates found in conventional power transistors for the attachment to the heat sink, except for the insulating substrate required for operation, and of instead exposing at least one flat side, preferably the insulating substrate and, in certain cases, the semiconductor component in the region of its metal electrode, to the cooling fluid directly and, to the extent possible, over its entire flat-side surface.
- the semiconductor component in certain cases provided with a thin protective coating, may also be exposed to the cooling fluid on the side away from the insulating substrate.
- the metal electrode should be connected to the insulating substrate in a material-tight manner and preferably in a full-surface fashion.
- the metal electrode here being assigned another important function along with its electric function, since it must not only quickly absorb and pass along the heat which arises, but must also distribute it in the surface. In this way, a uniform cooling of the semiconductor element can be achieved, because material-tight connections between material layers which follow one after the other, for example, of supporting plates or the like, are kept to a minimum.
- the coolant may be a gas, preferably a gas under pressure, e.g., nitrogen, or a liquid, e.g., water or oil, particularly a mineral-base oil or a paraffin-base oil or a synthetic oil; however, the coolant may also be a two-phase fluid, preferably a cooling agent or CO 2 .
- control and protective wiring for the semiconductor element on the same insulating substrate results in a series of advantages. Not only does thermal coupling of the involved components take place, but the separate cooling of the control and protective wiring becomes unnecessary. The required connecting lines are minimized, which helps to promote reliability. Only a small number of connecting lines lead outward.
- the invention is especially suitable for IGBT power transistors; however, it can also switch for MOSFET power transistors, which can switch powers in the range of 100 kW and greater at high operating frequencies and, in particular, currents of 5 to 100 A at voltages of 100 to 1000 V.
- the insulating substrate is used for the attachment of the semiconductor component.
- the insulating substrate may be a supporting plate of insulating material, particularly ceramics, on which the semiconductor component is placed with its metal electrode in a closed-surface, material-tight manner.
- the insulating substrate may also be designed as a metal plate provided on at least one flat side with an insulating layer, e.g., a metal plate with an insulating oxide layer.
- the last-mentioned embodiment is advantageous particularly because the metal plate may at the same time integrally form the metal electrode.
- the semiconductor component may be completely arranged in the coolant channel, so that the coolant flows by in a cooling manner both on the side of the insulating substrate advantageously designed as a plate and on the side of the semiconductor component away from the insulating substrate.
- the insulating substrate forms a wall of the coolant channel. This design is especially advantageous when the insulating substrate carries together a plurality of semiconductor components arranged one behind the other, because in this way a plurality of electric valves can be built up in modular fashion, for example, in the form of one or more half-bridges or full bridges.
- the two insulating substrates located opposite to one another preferably carry an equal number of semiconductor components.
- the semiconductor components may be arranged on the inner side of the coolant channel or on the outer side, whereby the latter design has the advantage of being easier to connect.
- the usually boardlike insulating substrate overlaps the semiconductor component in a closed-surface fashion.
- the insulating substrate in contrast to insulating substrates of conventional power transistors, to also be designed so that it overlaps with the semiconductor component only partially, preferably just to that extent which allows the semiconductor component to be securely attached to the insulating substrate.
- This has the advantage that the flat side of the semiconductor component, which is provided with the metal electrode, can be directly exposed to the flow of the coolant without the interpositioning of the insulating substrate.
- the walls of the coolant channel are here used as an insulating substrate.
- the insulating substrate which in turn may be a plate of insulating material, is advantageously provided with a continuous recess, on the edges of which the semiconductor component is mounted and through which the semiconductor component is exposed, at least with its first flat side, to the flow of coolant.
- the insulating substrate may also have side walls of the coolant channel which run at a right angle to the first flat side of the semiconductor component, e.g., in a form in which the insulating substrate, at least in the area of the recess, has an essentially U-shaped cross-section, so that the semiconductor component rests upon the edges of the prongs formed by the U-shaped cross-section and, all told, a coolant channel with a roughly rectangular cross-section is formed.
- the insulating substrate is designed as a profile body which carries at least one or more semiconductor components arranged one behind the other in the flow direction of the coolant, each of which semiconductor components includes at least one power transistor.
- the insulating substrate used to form the coolant channel may, along with the side walls of the coolant channel running at a right angle to the semiconductor component, also form portions of the walls which run on the plane of the semiconductor component.
- each of the semiconductor components may be mounted on the profile body by itself and separately from the others.
- a preferred embodiment calls for a plurality of semiconductor components connected to one another as one piece are mounted on each profile body. This makes it easier to seal off the coolant channel.
- An especially simple embodiment in which a plurality of semiconductor components may be grouped together into a module, calls for each of at least two walls of the coolant channel located opposite to one another to essentially be formed completely of at least one semiconductor component, and for the semiconductor components located opposite to one another to be connected by sealing strips to a coolant channel closed in the circumferential direction.
- the sealing strips may be formed by walls, the height of which may, in given cases, exceed the width of the semiconductor component; however, the sealing strips may also be comparatively flat strips.
- the coolant flow is a forced flow, in order to ensure an adequate heat transport.
- the fluid cooling arrangement advantageously includes a closed cooling fluid circuit, wherein the cooling fluid circulates in turn through the coolant channel and a cooler, i.e., a heat exchanger which gives off heat towards the outside.
- the cooling fluid circuit preferably includes a vaporizer and a condenser, whereby the coolant channel forms the vaporizer.
- cooling effectiveness can be increased if the insulating substrate, on the side away from the semiconductor element and exposed to the coolant flow, is provided with a structure that enlarges its heat exchange area, in particular, with ribs or projections.
- a structure that enlarges its heat exchange area in particular, with ribs or projections.
- the invention relates to measures through which the cooling performance of the fluid cooling arrangement may be increased.
- a fluid cooling arrangement not only may be used in a power transistor arrangement of the type discussed above, but is suitable generally for cooling semiconductor components, including in certain cases those with indirect cooling via a fluid-cooled cooling body.
- At least one part of the wall surface of the coolant channel that is exposed to the coolant flow, or, in a power transistor arrangement according to the type discussed above, at least one portion of the surface of the insulating substrate or of the semiconductor component, has a surface microstructure which reduces the thickness of the boundary layer of the coolant flow.
- the invention starts from the consideration that the slighter the thickness of the coolant flow boundary layer is, within which the coolant flow is called for and braked on shear, the greater the cooling effect of the coolant flow will be.
- microstructures which reduce surface friction lead to an improvement in the cooling effect of a coolant flow, because they reduce the boundary layer thickness.
- Microstructures that reduce the friction of fluids on surfaces are known and have been studied, among other ways, on the skin of sharks (D. Bechert and M. Bartenwerfer, "The Viscous Flow on Surfaces with Longitudinal Ribs,” J. Fluidmec. 1989, Vol. 206, pp. 105 to 129, and D. Bechert, B. Hoppe, "On the Drag Reduction of the Shark Skin,” AIAA Share Flow Control Conference, Mar. 12-14, 1985, Boulder, Colo.).
- microstructures in the form of a rib pattern with essentially parallel microribs extending lengthwise in the flow direction of the coolant flow are especially suitable for improving cooling effectiveness, particularly when the microribs have tops which taper at least approximately to a blade edge.
- the height of the ribs and their spacing is advantageously on the order of the boundary layer thickness or is less than the boundary layer thickness.
- the cooling fluid is advantageously a one-material system.
- FIG. 1 is a partially sectioned depiction in perspective of a fluid-cooled power transistor arrangement
- FIGS. 2-4 are sectional views of variants of the power transistor arrangement as in FIG. 1;
- FIG. 5 is a depiction in perspective of a fluid-cooled module with a plurality of power transistors
- FIG. 6 is a sectional view of the module seen along a Line VI--VI in FIG. 5;
- FIG. 7 is a sectional view of a variant of the module from FIG. 5;
- FIG. 8 is a sectional view of a component consisting of a plurality of modules
- FIG. 9 is a schematic depiction of a fluid-cooling arrangement for a power transistor
- FIG. 10 is a schematic depiction of a cooling-agent cooling arrangement for a power transistor
- FIG. 11 is a schematic depiction of a cooling arrangement with gaseous coolant for a power transistor
- FIG. 12 is a depiction in perspective of a surface microstructure for improving the cooling performance of a fluid-cooled electric valve.
- FIG. 13 is a variant of the surface microstructure
- FIG. 14 is a sectional view through the surface microstructure, seen along the Line XIV--XIV from FIG. 13.
- FIG. 1 in which the thickness relationships of the individual components are not true to scale, shows a power transistor module, namely an IGBT module, with a first chip or semiconductor component 1, which has a transistor circuit including a plurality of power transistors, as well as a second chip or semiconductor component 3, which contains the control electronics and protective wiring for the power transistors and is connected via connecting lines 5 to the first semiconductor component 1.
- the semiconductor components 1, 3 are rigidly connected in a material-tight fashion to, for example, an eutectically-produced metal plating 7, particularly one consisting of copper.
- the metal plating 7 forms the collector of the power transistors of the semiconductor component 1 and is connected both to the semiconductor component 1 and to a ceramic insulating board 9 in a material-tight, planar and homogeneous manner.
- the insulating board 9 is partially held by the edges in tracks 11 of a coolant channel 13 closed in the circumferential direction, in particular, so that both the flat side of the semiconductor component 1 away from the insulating board 9 as well as the flat side of the insulating board 9 away from the semiconductor component 1 are exposed to a coolant flow, indicated by arrow 15.
- Control lines 17 designed as thin wires and current bars 19 designed as copper bands connect the circuits of the semiconductor components 1, 3 to the terminals 21 arranged on the outer side of the coolant channel 13.
- In respect to heat transmission of the two semiconductor components at least the semiconductor component 1 is essentially exposed directly to the coolant flow 15, so that it is cooled on both sides in a full-area manner. In this way, a high power density can be achieved despite compact dimensions.
- the tracks 11 are preferably executed elastically and in an insulating fashion (e.g., made of an elastomer).
- a plurality of IGBT modules can be arranged in the flow direction 15, one behind the other and on a common insulating plate, as indicated at 23.
- the cooling fluid does not need to circulate through the coolant channel 13 on both sides of the insulating plate 9.
- the semiconductor components 1,3 with other types of power transistor, instead of IGBT modules.
- bipolar power transistors or MOSFET power transistors with or without driving stages or protective wiring can be used.
- the control circuit on the semiconductor 3 may, in certain cases, be replaced by an external electronics circuit.
- FIG. 2 shows a variant of the IGBT module that is distinguished from the structure in FIG. 1 only by the fact that the boardlike semiconductor components 1a, 3a, which are mounted over the metallization 7a in a material-tight and full-area manner on the ceramic insulating board 9a are coated, except for the contact sites of the control lines and/or the contact bands 19a, with a thin protective layer 25, which protects the active region of the semiconductor components 1a, 3a against contamination by the coolant.
- the protective layer 25 may, for example, be a coating of silicone rubber, which is covered by a metal foil from the outside.
- FIG. 3 shows a variant of an IGBT module, the semiconductor components 1b, 3b of which are mounted on a metal plate 7b, which corresponds in respect to function to the metallization 7, e.g., a copper plate, in a closed-surface and material-tight manner.
- the metal plate 7b is outside the region of the semiconductor components 1b, 3b; however, at least on the flat side away from the semiconductor components 1b, 3b there is an insulating layer, for example, a thin oxide layer 9b.
- the metal plate 7b performs, in addition to the electrode function, the attachment function of the insulating plate 9 from FIG. 1.
- FIG. 4 shows a variant in which the semiconductor elements 1c, 3c are arranged in a full-area manner on a metallization 7c, which has, at the same time, an electrode function.
- the insulating plate 9c in contrast, has a continuous recess 27, which is overlapped at least by the semiconductor component 1c that contains the power transistors, through which the cooling fluid may come directly into heat exchange contact with the metallization 7c and thus with the semiconductor component 1c, which facilitates the elimination of waste heat.
- the recess 27 overlaps the semiconductor component 1c completely.
- the semiconductor 1c rests upon the insulating plate 9c solely in the edge region of the recess 27. As indicated in FIG.
- the coolant channel together with the insulating plate 9c may also take the form of a profile tube 13c, here possibly a one-part rectangular pipe, on which the semiconductor components 1c, 3c may be mounted subsequently from the outside.
- coolant channel constructions of this type may also be used in the variants from FIG. 1 to 3.
- FIG. 5 shows an example which permits multiple IGBT modules, each of which, as in the example discussed above, forms an electric valve, to be grouped together into valve modules, particularly in the form of half-bridges or full bridges, partly in parallel or serial connection, and as applicable, a plurality of these bridges.
- the module designated generally by 29 includes two parallel insulating plates 9d consisting of a ceramic material, which are connected along their longitudinal edges by, preferably elastic, sealing strips 31 from the coolant channel 13d closed in the circumferential direction.
- arrow 15d indicates the flow direction of the cooling fluid.
- Each of the two insulating plates 9d carries on its flat side away from the coolant channel a plurality of semiconductor components 1d arranged one behind the other in the flow direction 15d, each of which constitutes a separate IGBT valve.
- the number of semiconductor components 1d on each of the two insulating boards 9d is the same.
- the semiconductor components 1 d are in turn placed via metallizations 7d upon the insulating plates 9d in a full-area and form-fitting manner.
- the terminals are shown at 19d.
- the protective and control circuits for the IGBT modules are not depicted separately. Naturally, the variants in FIGS. 2 to 4 may also be used in the module 29.
- the semiconductor components 1 d of each valve are arranged separately and at a distance from one another on the insulating plates 9. Because semiconductor components of the type under discussion are usually produced repeatedly in the same form next to one another on semiconductor substrate wafers, it is also possible in certain cases for a plurality of semiconductor components 1d to be connected as one piece to one another, as indicated at 33 in FIG. 5.
- FIG. 7 shows another variant, which builds upon the integrally-connected semiconductor components 1e.
- the semiconductor elements 1e of multiple electric valves are cut out together from the aforementioned substrate wafer and provided with a metallization (metal electrode 7e).
- the metal electrodes 7e have an electrically insulating layer on the side toward the cooling fluid.
- the semiconductor component plates 1e are arranged parallel to one another and connected to one another via sealing separation strips 31e. Together with the separation strips 31e, the semiconductor component boards 13 form the boundary of a coolant channel 13e closed in the circumferential direction.
- the terminals of the electric valves are indicated at 19e.
- FIG. 8 shows in schematic fashion how a plurality of the modules 29 as in FIG. 5 to 7 may be combined into a unit.
- the modules 29f are held parallel to one another in elastic tracks 37 in a shared housing 35.
- Their coolant channel 13f is connected at one end to a shared cooling fluid supply channel 39 and at the other end to a shared cooling fluid withdrawal channel 41.
- the modules 29f have associated with them support elements 43 arranged on the module plane, which are provided with attachment organs 45.
- the attachment organs 45 serve for the attachment of the control lines and the current bars and are, as indicated by the lines 19f, connected to the semiconductor components If of the modules 29f.
- the cooling fluid may be a gas under atmospheric overpressure, e.g., nitrogen, or a fluid, e.g., water, or an oil, particularly a mineral-base oil or a paraffin-basis oil or a synthetic oil.
- a fluid e.g., water
- an oil particularly a mineral-base oil or a paraffin-basis oil or a synthetic oil.
- two-phase fluids are also suitable, e.g., cooling agents or CO 2 .
- the cooling fluid is circulated in a forced flow through the coolant channel.
- FIG. 9 shows an example of a cooling arrangement with a liquid as the coolant.
- the coolant is fed by a pump 47 via a cooler or heat exchanger 49 to the coolant channel 13g.
- the cooling arrangement includes a temperature control system 51, which measures the temperature of the semiconductor component (indicated at 1g) in heat exchange contact with the cooling fluid by means of a temperature sensor 53 and, for example, by means of a ventilator 55, influences the cooling effectiveness of the cooler 49, and holds the semiconductor temperature at a target value settable at 57.
- a compensation vessel for the cooling fluid is indicated at 59.
- FIG. 10 shows a variant in which a two-phase cooling agent is used in order to cool the semiconductor component 1h.
- the cooling agent compressed by a compressor 61 in a condenser 63 is cooled and liquified.
- the cooling channel 13h forms a vaporizer in which the fluid cooling agent is introduced via a nozzle 67 or something similar and is evaporated through thermal absorption.
- a cooling agent as the coolant permits a more compact construction of the cooling arrangement.
- FIG. 11 shows a closed cooling agent circuit for a gaseous coolant, which is compressed by a compressor 69 before subsequently being cooled in a cooler or heat exchanger 72 and then supplied to the coolant channel 13i for heat exchange contact with the semiconductor component 1i.
- a compressor 69 a compressor 69 before subsequently being cooled in a cooler or heat exchanger 72 and then supplied to the coolant channel 13i for heat exchange contact with the semiconductor component 1i.
- the variants in FIGS. 10 and 11 also can be executed in a temperature-controlled fashion.
- the heat transfer from the surfaces of the semiconductor components to be cooled and/or the metal platings and insulating plates connected in closed-surface and material-tight fashion to the semiconductor components can be improved, particularly when a fluid is used as the coolant, by means of surface microstructures which reduce the boundary layer thickness of the coolant.
- the boundary layer is the area of the coolant flow in which the flow rate is reduced by friction and fluid adhesion to the wall surface. It has been shown that "sharkskin"-like surface structures not only reduce fluid friction on the wall surface, but also reduce the thickness of the boundary layer. As the boundary layer thickness is reduced, so is the distance between the surfaces emitting waste heat and the flowing areas of the coolant absorbing the heat.
- FIG. 12 shows a example of this type of surface microstructure which reduces the boundary layer thickness.
- the microstructure consists of a great number of ribs 71 running parallel to one another in the flow direction 15k of the coolant, the side flanks of which taper in wedge fashion to a bladelike top 73.
- the ribs 71 merge into one another in concavely curved grooves.
- the height of the ribs and their distance from one another is preferably smaller than the boundary layer thickness.
- the rib form shown in FIG. 12 has proved advantageous; however, other rib forms are also useful, for example, ribs, with rounded tops or trapezoid-form ribs and the like.
- FIGS. 13 and 14 show a top view of diamond-shaped knobs or elevations 75, which rise in wedgelike fashion in the flow direction 15l of the coolant along planes running vertical to the surface to be cooled.
- the roofage surfaces formed by the elevations 75 may be even or may be provided with microribs similar to what is shown in FIG. 12, as indicated at 71l.
- the elevations 75 may also have other, generally polygonal profiles. Those which are suitable include, among others, triangular shapes which point with one of their corners in the flow direction 15l.
- the dimensions of the elevations 75 are also on the order of the boundary layer thickness.
- valve structures according to the invention lies in the fact that due to the overall improvement in cooling the space requirement can be reduced.
- the electric valves can thus be housed better than before in the spatial vicinity to the electric devices to be controlled.
- This is of special advantage in the case of electric machines, for example, electric motors or electric generators, with field windings to be switched by electric valves, because the field windings may be connected via very short leads. By shortening the leads, line inductance may be reduced and thus the response time of the electric valve may be shortened.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Motor Or Generator Cooling System (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4217289.6 | 1992-05-25 | ||
DE19924217289 DE4217289C2 (de) | 1992-05-25 | 1992-05-25 | Fluidgekühlte Leistungstransistoranordnung |
PCT/DE1993/000465 WO1993024955A1 (fr) | 1992-05-25 | 1993-05-24 | Configuration de transistors de puissance refroidie par fluide |
Publications (1)
Publication Number | Publication Date |
---|---|
US5606201A true US5606201A (en) | 1997-02-25 |
Family
ID=6459694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/341,556 Expired - Lifetime US5606201A (en) | 1992-05-25 | 1993-05-24 | Fluid-cooled power transistor arrangement |
Country Status (5)
Country | Link |
---|---|
US (1) | US5606201A (fr) |
EP (2) | EP0642698B1 (fr) |
JP (2) | JP2532352B2 (fr) |
DE (2) | DE59302279D1 (fr) |
WO (2) | WO1993024983A1 (fr) |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999014807A1 (fr) * | 1997-09-17 | 1999-03-25 | Advanced Energy's Voorhees Operations | Module de refroidissement pour composants electroniques |
GB2347020A (en) * | 1999-02-02 | 2000-08-23 | 3Com Technologies Ltd | Cooling equipment |
WO2002028160A2 (fr) * | 2000-09-29 | 2002-04-04 | Nanostream, Inc. | Dispositifs microfluidiques pour transfert thermique |
WO2002062568A2 (fr) * | 2001-02-07 | 2002-08-15 | 3M Innovative Properties Company | Ensemble film de surface microstructure pour acquisition et transport de liquide |
FR2826508A1 (fr) * | 2001-06-20 | 2002-12-27 | Alstom | Module electronique de puissance et composant de puissance destine a equiper un tel module |
WO2003063241A2 (fr) * | 2002-01-22 | 2003-07-31 | Rini Technologies, Inc. | Procede et appareil assurant le transfert thermique d'un flux a haute temperature |
US20030151135A1 (en) * | 2000-01-31 | 2003-08-14 | Noriaki Sakamoto | Circuit device and manufacturing method of circuit device |
US20030155434A1 (en) * | 2002-02-01 | 2003-08-21 | Rini Daniel P. | Spray nozzle apparatus and method of use |
US20030160317A1 (en) * | 2000-01-31 | 2003-08-28 | Noriaki Sakamoto | Circuit device and manufacturing method of circuit device and semiconductor module |
US20030178178A1 (en) * | 2000-04-11 | 2003-09-25 | Norbert Breuer | Cooling device for cooling components of the power electronics, said device comprising a micro heat exchanger |
US20030226371A1 (en) * | 2001-04-26 | 2003-12-11 | Rini Daniel P. | Method and apparatus for high heat flux heat transfer |
US20040208030A1 (en) * | 2002-01-24 | 2004-10-21 | Bhate Suresh K. | High power density inverter and components thereof |
US20040207968A1 (en) * | 2003-04-09 | 2004-10-21 | Alstom | Power switching module and inverter equipped therewith |
US20050046020A1 (en) * | 2003-08-27 | 2005-03-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with pipe for passing refrigerant liquid |
US20050083655A1 (en) * | 2003-10-15 | 2005-04-21 | Visteon Global Technologies, Inc. | Dielectric thermal stack for the cooling of high power electronics |
US20050083652A1 (en) * | 2003-10-15 | 2005-04-21 | Visteon Global Technologies, Inc. | Liquid cooled semiconductor device |
US20050092478A1 (en) * | 2003-10-30 | 2005-05-05 | Visteon Global Technologies, Inc. | Metal foam heat sink |
US20050106360A1 (en) * | 2003-11-13 | 2005-05-19 | Johnston Raymond P. | Microstructured surface building assemblies for fluid disposition |
US20060117782A1 (en) * | 2001-04-26 | 2006-06-08 | Rini Daniel P | Method and apparatus for high heat flux heat transfer |
US20070252268A1 (en) * | 2006-03-31 | 2007-11-01 | Chew Tong F | Thermally controllable substrate |
DE102006037496A1 (de) * | 2006-08-10 | 2008-02-14 | Compact Dynamics Gmbh | Bremsaggregat für ein Landfahrzeug |
US20090244848A1 (en) * | 2008-03-28 | 2009-10-01 | Lim Seung-Won | Power Device Substrates and Power Device Packages Including the Same |
CN1790691B (zh) * | 2004-11-11 | 2011-11-23 | 株式会社电装 | 半导体装置 |
US8243451B2 (en) | 2010-06-08 | 2012-08-14 | Toyota Motor Engineering & Manufacturing North America, Inc. | Cooling member for heat containing device |
US20130061493A1 (en) * | 2010-06-02 | 2013-03-14 | Grenzebach Bsh Gmbh | Method and device for the air-based solar thermal generation of process heat |
DE112008001578B4 (de) * | 2007-06-13 | 2016-10-20 | Toyota Jidosha Kabushiki Kaisha | Antriebsvorrichtung und Fahrzeug mit einer solchen Antriebsvorrichtung |
US20160351356A1 (en) * | 2014-02-21 | 2016-12-01 | Maschinenfabrik Reinhausen Gmbh | Switch |
US20170133913A1 (en) * | 2015-11-05 | 2017-05-11 | Hyundai Motor Company | Blower motor of hvac system for vehicle |
US10424528B2 (en) * | 2018-02-07 | 2019-09-24 | Toyota Motor Engineering & Manufacturing North America, Inc. | Layered cooling structure including insulative layer and multiple metallization layers |
US10462944B1 (en) * | 2018-09-25 | 2019-10-29 | Getac Technology Corporation | Wave absorbing heat dissipation structure |
CN111403365A (zh) * | 2020-02-18 | 2020-07-10 | 广东美的白色家电技术创新中心有限公司 | 智能功率模块 |
US20200258813A1 (en) * | 2017-02-13 | 2020-08-13 | Shindengen Electric Manufacturing Co., Ltd. | Electronic device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3829641B2 (ja) * | 2001-04-17 | 2006-10-04 | 株式会社日立製作所 | パワー半導体モジュール |
JP4305406B2 (ja) | 2005-03-18 | 2009-07-29 | 三菱電機株式会社 | 冷却構造体 |
JP2011216391A (ja) * | 2010-04-01 | 2011-10-27 | Sumitomo Wiring Syst Ltd | 端子圧着電線の製造方法、端子圧着電線、端子圧着装置 |
DE102015220852A1 (de) * | 2015-10-26 | 2017-04-27 | Robert Bosch Gmbh | Elektrische Maschine |
KR20180134348A (ko) * | 2016-04-12 | 2018-12-18 | 티엠4 인코포레이티드 | 밀봉된 고정자를 가진 액체 냉각 전기 머신 |
GB2552342A (en) * | 2016-07-19 | 2018-01-24 | Sevcon Ltd | Electric motor |
DE102017222822A1 (de) | 2017-12-14 | 2019-06-19 | Robert Bosch Gmbh | Elektrische Maschine |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4296455A (en) * | 1979-11-23 | 1981-10-20 | International Business Machines Corporation | Slotted heat sinks for high powered air cooled modules |
US5077601A (en) * | 1988-09-09 | 1991-12-31 | Hitachi, Ltd. | Cooling system for cooling an electronic device and heat radiation fin for use in the cooling system |
US5262921A (en) * | 1990-03-03 | 1993-11-16 | Rheinmetall Gmbh | Directly cooled circuit board for an electronic power circuit |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3250929A (en) * | 1963-10-28 | 1966-05-10 | Syncro Corp | Heat sink construction for generator regulators |
AT282990B (de) * | 1967-11-30 | 1970-07-27 | Siemens Ag | Antrieb für batteriegespeiste Tonwiedergabegeräte, insbesondere Tonbandgeräte |
US3896320A (en) * | 1971-10-19 | 1975-07-22 | United Aircraft Corp | High speed electric generator |
GB1488386A (en) * | 1974-10-04 | 1977-10-12 | Semikron Gleichrichterbau | Semiconductor rectifier arrangement |
DE2828473A1 (de) * | 1978-06-29 | 1980-01-17 | Bosch Gmbh Robert | Oelgekuehlte elektrische maschine |
US4203129A (en) * | 1978-07-11 | 1980-05-13 | International Business Machines Corporation | Bubble generating tunnels for cooling semiconductor devices |
FR2512601B1 (fr) * | 1981-09-08 | 1986-05-16 | Bosch Gmbh Robert | Generateur de courant alternatif avec des redresseurs refroidis par l'air |
FR2538989B1 (fr) * | 1982-12-30 | 1985-10-04 | Thomson Csf | Structure d'assemblage de circuits electroniques complexes, et procede d'amelioration de la fiabilite d'un tel assemblage |
US4879632A (en) * | 1985-10-04 | 1989-11-07 | Fujitsu Limited | Cooling system for an electronic circuit device |
US4739204A (en) * | 1986-01-30 | 1988-04-19 | Mitsubishi Denki Kabushiki Kaisha | Liquid cooled a.c. vehicle generator |
US4883982A (en) * | 1988-06-02 | 1989-11-28 | General Electric Company | Electronically commutated motor, blower integral therewith, and stationary and rotatable assemblies therefor |
US5049982A (en) * | 1989-07-28 | 1991-09-17 | At&T Bell Laboratories | Article comprising a stacked array of electronic subassemblies |
-
1993
- 1993-05-24 WO PCT/DE1993/000466 patent/WO1993024983A1/fr active IP Right Grant
- 1993-05-24 DE DE59302279T patent/DE59302279D1/de not_active Expired - Fee Related
- 1993-05-24 WO PCT/DE1993/000465 patent/WO1993024955A1/fr active IP Right Grant
- 1993-05-24 EP EP93909798A patent/EP0642698B1/fr not_active Expired - Lifetime
- 1993-05-24 DE DE59303891T patent/DE59303891D1/de not_active Expired - Fee Related
- 1993-05-24 JP JP6500085A patent/JP2532352B2/ja not_active Expired - Fee Related
- 1993-05-24 US US08/341,556 patent/US5606201A/en not_active Expired - Lifetime
- 1993-05-24 EP EP93909799A patent/EP0642703B1/fr not_active Expired - Lifetime
- 1993-05-24 JP JP6500086A patent/JP2660879B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4296455A (en) * | 1979-11-23 | 1981-10-20 | International Business Machines Corporation | Slotted heat sinks for high powered air cooled modules |
US5077601A (en) * | 1988-09-09 | 1991-12-31 | Hitachi, Ltd. | Cooling system for cooling an electronic device and heat radiation fin for use in the cooling system |
US5262921A (en) * | 1990-03-03 | 1993-11-16 | Rheinmetall Gmbh | Directly cooled circuit board for an electronic power circuit |
Cited By (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6400012B1 (en) | 1997-09-17 | 2002-06-04 | Advanced Energy Voorhees, Inc. | Heat sink for use in cooling an integrated circuit |
WO1999014807A1 (fr) * | 1997-09-17 | 1999-03-25 | Advanced Energy's Voorhees Operations | Module de refroidissement pour composants electroniques |
US20090014562A1 (en) * | 1997-12-16 | 2009-01-15 | Rini Technologies | Spray Nozzle Apparatus and Method of Use |
GB2347020A (en) * | 1999-02-02 | 2000-08-23 | 3Com Technologies Ltd | Cooling equipment |
US6330154B1 (en) | 1999-02-02 | 2001-12-11 | 3Com Corporation | Cooling equipment |
GB2347020B (en) * | 1999-02-02 | 2003-05-14 | 3Com Technologies Ltd | Cooling equipment |
US20030151135A1 (en) * | 2000-01-31 | 2003-08-14 | Noriaki Sakamoto | Circuit device and manufacturing method of circuit device |
US7091606B2 (en) | 2000-01-31 | 2006-08-15 | Sanyo Electric Co., Ltd. | Circuit device and manufacturing method of circuit device and semiconductor module |
US7125798B2 (en) | 2000-01-31 | 2006-10-24 | Sanyo Electric Co., Ltd. | Circuit device and manufacturing method of circuit device |
US20050056916A1 (en) * | 2000-01-31 | 2005-03-17 | Sanyo Electric Co., Ltd., A Japan Corporation | Circuit device and manufacturing method of circuit device |
US20030160317A1 (en) * | 2000-01-31 | 2003-08-28 | Noriaki Sakamoto | Circuit device and manufacturing method of circuit device and semiconductor module |
US20030178178A1 (en) * | 2000-04-11 | 2003-09-25 | Norbert Breuer | Cooling device for cooling components of the power electronics, said device comprising a micro heat exchanger |
US6501654B2 (en) | 2000-09-29 | 2002-12-31 | Nanostream, Inc. | Microfluidic devices for heat transfer |
WO2002028160A3 (fr) * | 2000-09-29 | 2002-06-27 | Nanostream Inc | Dispositifs microfluidiques pour transfert thermique |
WO2002028160A2 (fr) * | 2000-09-29 | 2002-04-04 | Nanostream, Inc. | Dispositifs microfluidiques pour transfert thermique |
US6746567B2 (en) | 2001-02-07 | 2004-06-08 | 3M Innovative Properties Company | Microstructured surface film assembly for liquid acquisition and transport |
US20030104170A1 (en) * | 2001-02-07 | 2003-06-05 | 3M Innovative Properties Company | Microstructured surface film assembly for liquid acquisition and transport |
US20030102076A1 (en) * | 2001-02-07 | 2003-06-05 | 3M Innovative Properties Company | Microstructured surface film assembly for liquid acquisition and transport |
WO2002062568A3 (fr) * | 2001-02-07 | 2003-09-04 | 3M Innovative Properties Co | Ensemble film de surface microstructure pour acquisition et transport de liquide |
WO2002062568A2 (fr) * | 2001-02-07 | 2002-08-15 | 3M Innovative Properties Company | Ensemble film de surface microstructure pour acquisition et transport de liquide |
US6531206B2 (en) | 2001-02-07 | 2003-03-11 | 3M Innovative Properties Company | Microstructured surface film assembly for liquid acquisition and transport |
US20030226371A1 (en) * | 2001-04-26 | 2003-12-11 | Rini Daniel P. | Method and apparatus for high heat flux heat transfer |
US6993926B2 (en) | 2001-04-26 | 2006-02-07 | Rini Technologies, Inc. | Method and apparatus for high heat flux heat transfer |
US20060117782A1 (en) * | 2001-04-26 | 2006-06-08 | Rini Daniel P | Method and apparatus for high heat flux heat transfer |
US20080210406A1 (en) * | 2001-04-26 | 2008-09-04 | Rini Daniel P | Method and apparatus for high heat flux heat transfer |
US7921664B2 (en) | 2001-04-26 | 2011-04-12 | Rini Technologies, Inc. | Method and apparatus for high heat flux heat transfer |
US7654100B2 (en) | 2001-04-26 | 2010-02-02 | Rini Technologies, Inc. | Method and apparatus for high heat flux heat transfer |
FR2826508A1 (fr) * | 2001-06-20 | 2002-12-27 | Alstom | Module electronique de puissance et composant de puissance destine a equiper un tel module |
US6738253B2 (en) | 2001-06-20 | 2004-05-18 | Alstom | Electronic power module and a power component designed to equip such a module |
EP1271646A2 (fr) * | 2001-06-20 | 2003-01-02 | Alstom | Module électronique de puissance et composant de puissance destiné à équiper un tel module |
EP1271646A3 (fr) * | 2001-06-20 | 2005-12-14 | Alstom | Module électronique de puissance et composant de puissance destiné à équiper un tel module |
WO2003063241A2 (fr) * | 2002-01-22 | 2003-07-31 | Rini Technologies, Inc. | Procede et appareil assurant le transfert thermique d'un flux a haute temperature |
WO2003063241A3 (fr) * | 2002-01-22 | 2004-04-01 | Rini Technologies Inc | Procede et appareil assurant le transfert thermique d'un flux a haute temperature |
US20040208030A1 (en) * | 2002-01-24 | 2004-10-21 | Bhate Suresh K. | High power density inverter and components thereof |
US6980450B2 (en) | 2002-01-24 | 2005-12-27 | Inverters Unlimited, Inc. | High power density inverter and components thereof |
US8100169B2 (en) | 2002-02-01 | 2012-01-24 | Rini Technologies, Inc. | Spray nozzle apparatus and method of use |
US8104533B2 (en) | 2002-02-01 | 2012-01-31 | Rini Technologies, Inc. | Spray nozzle apparatus and method of use |
US20080048052A1 (en) * | 2002-02-01 | 2008-02-28 | Rini Daniel P | Spray Nozzle Apparatus and Method of Use |
US20030155434A1 (en) * | 2002-02-01 | 2003-08-21 | Rini Daniel P. | Spray nozzle apparatus and method of use |
US7042725B2 (en) * | 2003-04-09 | 2006-05-09 | Alstom | Power switching module and inverter equipped therewith |
US20040207968A1 (en) * | 2003-04-09 | 2004-10-21 | Alstom | Power switching module and inverter equipped therewith |
US7304379B2 (en) * | 2003-08-27 | 2007-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with pipe for passing refrigerant liquid |
US20050046020A1 (en) * | 2003-08-27 | 2005-03-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with pipe for passing refrigerant liquid |
US20080006935A1 (en) * | 2003-08-27 | 2008-01-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with pipe for passing refrigerant liquid |
US7705448B2 (en) * | 2003-08-27 | 2010-04-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device for pipe for passing refrigerant liquid |
US20060061965A1 (en) * | 2003-10-15 | 2006-03-23 | Visteon Global Technologies, Inc.: | Semiconductor device |
US6992887B2 (en) | 2003-10-15 | 2006-01-31 | Visteon Global Technologies, Inc. | Liquid cooled semiconductor device |
US20050083652A1 (en) * | 2003-10-15 | 2005-04-21 | Visteon Global Technologies, Inc. | Liquid cooled semiconductor device |
US20050083655A1 (en) * | 2003-10-15 | 2005-04-21 | Visteon Global Technologies, Inc. | Dielectric thermal stack for the cooling of high power electronics |
US20050092478A1 (en) * | 2003-10-30 | 2005-05-05 | Visteon Global Technologies, Inc. | Metal foam heat sink |
US20050106360A1 (en) * | 2003-11-13 | 2005-05-19 | Johnston Raymond P. | Microstructured surface building assemblies for fluid disposition |
CN1790691B (zh) * | 2004-11-11 | 2011-11-23 | 株式会社电装 | 半导体装置 |
US10079226B2 (en) | 2004-11-11 | 2018-09-18 | Denso Corporation | Semiconductor device |
US20070252268A1 (en) * | 2006-03-31 | 2007-11-01 | Chew Tong F | Thermally controllable substrate |
DE102006037496B4 (de) * | 2006-08-10 | 2008-08-14 | Compact Dynamics Gmbh | Bremsaggregat für ein Landfahrzeug |
US20080048493A1 (en) * | 2006-08-10 | 2008-02-28 | Compact Dynamics Gmbh | Braking assembly for a land vehicle |
DE102006037496A1 (de) * | 2006-08-10 | 2008-02-14 | Compact Dynamics Gmbh | Bremsaggregat für ein Landfahrzeug |
US8366208B2 (en) | 2006-08-10 | 2013-02-05 | Compact Dynamics Gmbh | Braking assembly for a land vehicle |
DE112008001578B4 (de) * | 2007-06-13 | 2016-10-20 | Toyota Jidosha Kabushiki Kaisha | Antriebsvorrichtung und Fahrzeug mit einer solchen Antriebsvorrichtung |
US20090244848A1 (en) * | 2008-03-28 | 2009-10-01 | Lim Seung-Won | Power Device Substrates and Power Device Packages Including the Same |
US9546816B2 (en) * | 2010-06-02 | 2017-01-17 | Grenzebach Bsh Gmbh | Method and device for the air-based solar thermal generation of process heat |
US20130061493A1 (en) * | 2010-06-02 | 2013-03-14 | Grenzebach Bsh Gmbh | Method and device for the air-based solar thermal generation of process heat |
US8243451B2 (en) | 2010-06-08 | 2012-08-14 | Toyota Motor Engineering & Manufacturing North America, Inc. | Cooling member for heat containing device |
US9865409B2 (en) * | 2014-02-21 | 2018-01-09 | Maschinenfabrik Reinhausen Gmbh | Switch |
US20160351356A1 (en) * | 2014-02-21 | 2016-12-01 | Maschinenfabrik Reinhausen Gmbh | Switch |
US20170133913A1 (en) * | 2015-11-05 | 2017-05-11 | Hyundai Motor Company | Blower motor of hvac system for vehicle |
CN106685142A (zh) * | 2015-11-05 | 2017-05-17 | 现代自动车株式会社 | 用于车辆的hvac***的鼓风机电机 |
US10170961B2 (en) * | 2015-11-05 | 2019-01-01 | Hyundai Motor Company | Blower motor of HVAC system for vehicle |
US20200258813A1 (en) * | 2017-02-13 | 2020-08-13 | Shindengen Electric Manufacturing Co., Ltd. | Electronic device |
US10950522B2 (en) * | 2017-02-13 | 2021-03-16 | Shindengen Electric Manufacturing Co., Ltd. | Electronic device |
US10424528B2 (en) * | 2018-02-07 | 2019-09-24 | Toyota Motor Engineering & Manufacturing North America, Inc. | Layered cooling structure including insulative layer and multiple metallization layers |
US10462944B1 (en) * | 2018-09-25 | 2019-10-29 | Getac Technology Corporation | Wave absorbing heat dissipation structure |
CN111403365A (zh) * | 2020-02-18 | 2020-07-10 | 广东美的白色家电技术创新中心有限公司 | 智能功率模块 |
CN111403365B (zh) * | 2020-02-18 | 2022-03-22 | 广东美的白色家电技术创新中心有限公司 | 智能功率模块 |
Also Published As
Publication number | Publication date |
---|---|
JP2660879B2 (ja) | 1997-10-08 |
JPH07507438A (ja) | 1995-08-10 |
EP0642698A1 (fr) | 1995-03-15 |
WO1993024983A1 (fr) | 1993-12-09 |
EP0642703A1 (fr) | 1995-03-15 |
EP0642703B1 (fr) | 1996-04-17 |
JP2532352B2 (ja) | 1996-09-11 |
DE59303891D1 (de) | 1996-10-24 |
DE59302279D1 (de) | 1996-05-23 |
JPH07507658A (ja) | 1995-08-24 |
EP0642698B1 (fr) | 1996-09-18 |
WO1993024955A1 (fr) | 1993-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5606201A (en) | Fluid-cooled power transistor arrangement | |
DE4217289C2 (de) | Fluidgekühlte Leistungstransistoranordnung | |
EP0901166B1 (fr) | Module semi-conducteur à haute puissance avec une pluralité de sous-modules comprenant des éléments de refroidissement intégrés | |
JP5434986B2 (ja) | 半導体モジュールおよびそれを備えた半導体装置 | |
US20210265239A1 (en) | Cooling apparatus, semiconductor module, and vehicle | |
US6989592B2 (en) | Integrated power module with reduced thermal impedance | |
EP0777272B1 (fr) | Dispositif semi-conducteur | |
US20080303137A1 (en) | Semiconductor devices with layers having extended perimeters for improved cooling and methods for cooling semiconductor devices | |
KR101914927B1 (ko) | 전력용 반도체의 냉각 모듈 | |
JP6834841B2 (ja) | 半導体装置 | |
JP2009105389A (ja) | パワーモジュール | |
US20200006190A1 (en) | Heat transfer structure, power electronics module, cooling element, method of manufacturing a heat transfer structure and method of manufacturing a power electronics component | |
JP6922450B2 (ja) | 半導体モジュール | |
CN213692016U (zh) | 功率半导体装置 | |
CN116582017A (zh) | 逆变器的开关模块、具有多个这种开关模块的逆变器以及具有逆变器的车辆 | |
US11758700B1 (en) | Indirect impingement liquid cooling for static synchronous series compensator systems | |
US20220084905A1 (en) | Semiconductor device | |
GB2392010A (en) | Semiconductor module cooling device | |
JP5480260B2 (ja) | グラウンディングシステムおよび装置 | |
JPWO2013105456A1 (ja) | 回路基板および電子デバイス | |
US20230178455A1 (en) | Semiconductor device and power conversion device | |
JP2020141023A (ja) | 半導体装置 | |
US12002730B2 (en) | Semiconductor module | |
US20240030096A1 (en) | Power block based on top-side cool surface-mount discrete devices with double-sided heat sinking | |
US11410909B2 (en) | Fluid channel, power semiconductor module and method for fabricating a power semiconductor module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: MANNESMANN AKTIENGESELLSCHAFT MANNESMANNUFER 2, Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LUTZ, DIETER;REEL/FRAME:007262/0639 Effective date: 19941006 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |