US20160068711A1 - Organic Film CMP Slurry Composition and Polishing Method Using Same - Google Patents
Organic Film CMP Slurry Composition and Polishing Method Using Same Download PDFInfo
- Publication number
- US20160068711A1 US20160068711A1 US14/785,014 US201414785014A US2016068711A1 US 20160068711 A1 US20160068711 A1 US 20160068711A1 US 201414785014 A US201414785014 A US 201414785014A US 2016068711 A1 US2016068711 A1 US 2016068711A1
- Authority
- US
- United States
- Prior art keywords
- group
- substituted
- unsubstituted
- cmp slurry
- slurry composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 132
- 238000005498 polishing Methods 0.000 title claims abstract description 110
- 239000002002 slurry Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 24
- 230000002378 acidificating effect Effects 0.000 claims abstract description 9
- 239000012454 non-polar solvent Substances 0.000 claims abstract description 9
- 239000002798 polar solvent Substances 0.000 claims abstract description 9
- 125000003118 aryl group Chemical group 0.000 claims description 39
- 125000004429 atom Chemical group 0.000 claims description 39
- 125000000524 functional group Chemical group 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims description 21
- 239000007800 oxidant agent Substances 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 19
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 16
- 125000003277 amino group Chemical group 0.000 claims description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 13
- 125000004104 aryloxy group Chemical group 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 13
- 125000003545 alkoxy group Chemical group 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 125000005843 halogen group Chemical group 0.000 claims description 12
- 125000003342 alkenyl group Chemical group 0.000 claims description 11
- 125000005011 alkyl ether group Chemical group 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 125000000304 alkynyl group Chemical group 0.000 claims description 11
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 11
- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 11
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 11
- 125000001188 haloalkyl group Chemical group 0.000 claims description 11
- 125000001072 heteroaryl group Chemical group 0.000 claims description 11
- 125000004446 heteroarylalkyl group Chemical group 0.000 claims description 11
- 125000004366 heterocycloalkenyl group Chemical group 0.000 claims description 11
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 claims description 11
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 11
- 125000004404 heteroalkyl group Chemical group 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 9
- 150000003624 transition metals Chemical class 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000003002 pH adjusting agent Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 7
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- 125000004405 heteroalkoxy group Chemical group 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 125000004663 dialkyl amino group Chemical group 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 239000013522 chelant Substances 0.000 claims 2
- 150000003841 chloride salts Chemical class 0.000 claims 1
- 125000001033 ether group Chemical group 0.000 claims 1
- 150000002823 nitrates Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 194
- 0 CC.C[3*]C.[1*]C.[2*]C1=CC=C2/C=C\C3=CC=CC4=C3C2=C1C=C4 Chemical compound CC.C[3*]C.[1*]C.[2*]C1=CC=C2/C=C\C3=CC=CC4=C3C2=C1C=C4 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000000376 reactant Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000006748 scratching Methods 0.000 description 7
- 230000002393 scratching effect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical class [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- PSFQDWLCESDGPD-UHFFFAOYSA-N CC(C)C1=CC=C(O)C=C1.CC(C)C1=CC=CC=C1.CCC.CCC1=C2C=CC=CC2=C(CC)C2=C1C=CC=C2.CCC1=CC2=C(C=C1)C=C(CC)C=C2.CCC1=CC=C(C2=CC=C(CC)C=C2)C=C1.CCC1=CC=C(CC)C=C1.CCC1=CC=C(CCC2=CC=C(CC)C=C2)C=C1.CCC1=CC=CC2=C1/C=C\C=C/2CC Chemical compound CC(C)C1=CC=C(O)C=C1.CC(C)C1=CC=CC=C1.CCC.CCC1=C2C=CC=CC2=C(CC)C2=C1C=CC=C2.CCC1=CC2=C(C=C1)C=C(CC)C=C2.CCC1=CC=C(C2=CC=C(CC)C=C2)C=C1.CCC1=CC=C(CC)C=C1.CCC1=CC=C(CCC2=CC=C(CC)C=C2)C=C1.CCC1=CC=CC2=C1/C=C\C=C/2CC PSFQDWLCESDGPD-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 4
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003377 acid catalyst Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XAXZKPUQBVJSGC-UHFFFAOYSA-N C1=CC=C2C=CC=CC2=C1.C1CC2CCC1C2.CC.CC.CC(C)C1=CC=C(O)C=C1.CC(C)C1=CC=CC=C1.CCC.CCC.CCC.CCC1=C2C=CC=CC2=C(CC)C2=C1C=CC=C2.CCC1=CC=C(C2=CC=C(CC)C=C2)C=C1.CCC1=CC=C(CC)C=C1.CCC1=CC=C(CCC2=CC=C(CC)C=C2)C=C1 Chemical compound C1=CC=C2C=CC=CC2=C1.C1CC2CCC1C2.CC.CC.CC(C)C1=CC=C(O)C=C1.CC(C)C1=CC=CC=C1.CCC.CCC.CCC.CCC1=C2C=CC=CC2=C(CC)C2=C1C=CC=C2.CCC1=CC=C(C2=CC=C(CC)C=C2)C=C1.CCC1=CC=C(CC)C=C1.CCC1=CC=C(CCC2=CC=C(CC)C=C2)C=C1 XAXZKPUQBVJSGC-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- WETWJCDKMRHUPV-UHFFFAOYSA-N acetyl chloride Chemical compound CC(Cl)=O WETWJCDKMRHUPV-UHFFFAOYSA-N 0.000 description 2
- 239000012346 acetyl chloride Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- -1 alcohol amines Chemical class 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- ZJAOAACCNHFJAH-UHFFFAOYSA-N phosphonoformic acid Chemical compound OC(=O)P(O)(O)=O ZJAOAACCNHFJAH-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 description 1
- DAJPMKAQEUGECW-UHFFFAOYSA-N 1,4-bis(methoxymethyl)benzene Chemical compound COCC1=CC=C(COC)C=C1 DAJPMKAQEUGECW-UHFFFAOYSA-N 0.000 description 1
- CPPFVJLHDNOVTN-UHFFFAOYSA-N 1-Methoxypyrene Chemical compound C1=C2C(OC)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 CPPFVJLHDNOVTN-UHFFFAOYSA-N 0.000 description 1
- NJQJGRGGIUNVAB-UHFFFAOYSA-N 2,4,4,6-tetrabromocyclohexa-2,5-dien-1-one Chemical compound BrC1=CC(Br)(Br)C=C(Br)C1=O NJQJGRGGIUNVAB-UHFFFAOYSA-N 0.000 description 1
- PQHYOGIRXOKOEJ-UHFFFAOYSA-N 2-(1,2-dicarboxyethylamino)butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NC(C(O)=O)CC(O)=O PQHYOGIRXOKOEJ-UHFFFAOYSA-N 0.000 description 1
- KFVIYKFKUYBKTP-UHFFFAOYSA-N 2-n-(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCNC1=NC(N)=NC(N)=N1 KFVIYKFKUYBKTP-UHFFFAOYSA-N 0.000 description 1
- UNHTXHGQQCZHEI-UHFFFAOYSA-N 2-n-butoxy-2-n-methyl-1,3,5-triazine-2,4,6-triamine Chemical compound CCCCON(C)C1=NC(N)=NC(N)=N1 UNHTXHGQQCZHEI-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
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- DRDOWOBXRFRAAI-UHFFFAOYSA-N C1=CC(C2=CC=C(OCC3CO3)C=C2)=CC=C1COC1CO1.C=O.COCN1C(=O)N(COC)C2C1N(C)C(=O)N2COC.OCCNC1=NC(NCCO)=NC(NCCO)=N1 Chemical compound C1=CC(C2=CC=C(OCC3CO3)C=C2)=CC=C1COC1CO1.C=O.COCN1C(=O)N(COC)C2C1N(C)C(=O)N2COC.OCCNC1=NC(NCCO)=NC(NCCO)=N1 DRDOWOBXRFRAAI-UHFFFAOYSA-N 0.000 description 1
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- OVNFNRWNWPRBCO-UHFFFAOYSA-N C1=CC2=CC3=C(C=C2C=C1)CC1=CC2=C(C=CC=C2)C=C1C3.C1=CC2=CC3=C4C(=C2C=C1)C/C1=C/C=C\C2=C1C4=C(C=C3)C=C2.C1=CC=C2C=C3C=C4C=C5C=CC=CC5=CC4=CC3=CC2=C1.C1=CC=C2C=C3C=C4C=CC=CC4=CC3=CC2=C1.C1=CC=C2CC3=C(C=C4C=CC=CC4=C3)CC2=C1.C1=CC=C2CC3=C(C=CC=C3)CC2=C1.C1=C\C2=C\C=C3\C=C\C4=C5\C6=C(C2=C35)C/1=C\C=C6/C=C\4 Chemical compound C1=CC2=CC3=C(C=C2C=C1)CC1=CC2=C(C=CC=C2)C=C1C3.C1=CC2=CC3=C4C(=C2C=C1)C/C1=C/C=C\C2=C1C4=C(C=C3)C=C2.C1=CC=C2C=C3C=C4C=C5C=CC=CC5=CC4=CC3=CC2=C1.C1=CC=C2C=C3C=C4C=CC=CC4=CC3=CC2=C1.C1=CC=C2CC3=C(C=C4C=CC=CC4=C3)CC2=C1.C1=CC=C2CC3=C(C=CC=C3)CC2=C1.C1=C\C2=C\C=C3\C=C\C4=C5\C6=C(C2=C35)C/1=C\C=C6/C=C\4 OVNFNRWNWPRBCO-UHFFFAOYSA-N 0.000 description 1
- YTERHAVXCGVWOL-UHFFFAOYSA-N CC.CCC1=CC=C(CC)C=C1.COC1=CC=C2/C=C\C3=C\C=C/C4=C3C2=C1C=C4 Chemical compound CC.CCC1=CC=C(CC)C=C1.COC1=CC=C2/C=C\C3=C\C=C/C4=C3C2=C1C=C4 YTERHAVXCGVWOL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 150000001370 alpha-amino acid derivatives Chemical class 0.000 description 1
- 235000008206 alpha-amino acids Nutrition 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- PASDCCFISLVPSO-UHFFFAOYSA-N benzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1 PASDCCFISLVPSO-UHFFFAOYSA-N 0.000 description 1
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- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 239000008119 colloidal silica Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- RVOJTCZRIKWHDX-UHFFFAOYSA-N cyclohexanecarbonyl chloride Chemical compound ClC(=O)C1CCCCC1 RVOJTCZRIKWHDX-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- DENRZWYUOJLTMF-UHFFFAOYSA-N diethyl sulfate Chemical compound CCOS(=O)(=O)OCC DENRZWYUOJLTMF-UHFFFAOYSA-N 0.000 description 1
- 229940008406 diethyl sulfate Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229960005102 foscarnet Drugs 0.000 description 1
- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- NSNPSJGHTQIXDO-UHFFFAOYSA-N naphthalene-1-carbonyl chloride Chemical compound C1=CC=C2C(C(=O)Cl)=CC=CC2=C1 NSNPSJGHTQIXDO-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- KJIFKLIQANRMOU-UHFFFAOYSA-N oxidanium;4-methylbenzenesulfonate Chemical compound O.CC1=CC=C(S(O)(=O)=O)C=C1 KJIFKLIQANRMOU-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical compound NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a CMP slurry composition for organic films and a polishing method using the same.
- a method for producing a semiconductor includes a process of forming an inorganic film for example a silicon oxide film or a silicon nitride film on a patterned silicon wafer and a process of gap-filling via-holes formed in the inorganic film.
- the gap-filling process is performed to fill the via-holes with organic film materials, after the gap-filling process, a planarization process is performed to remove excess of the organic film.
- polishing by CMP chemical mechanical polishing
- a typical CMP slurry composition for organic films includes polymer polishing particles in order to allow the organic films to be polished at a high polishing amount per unit time without deterioration in surface conditions such as scratches.
- the typical CMP slurry composition fails to achieve a desired polishing amount while enhancing a degree of planarization on a polished surface, with respect to some kind of organic film.
- a metal oxide abrasive used in polishing of metal films such as silicon and the like is used in polishing of the organic films, it is difficult achieve a desired polishing amount with respect to some kind of organic film, and/or the degree of planarization on a polished surface is lowered due to scratches and the like.
- a CMP slurry composition for organic films according to the present invention may include at least one of polar solvents and non-polar solvents; and a metal oxide abrasive, wherein the composition is acidic, and is capable of being used for polishing organic films having a carbon content of about 50 atm % to 95 atm %.
- a method of polishing an organic film according to the present invention may include polishing an organic film, which has a carbon content of about 50 atm % to 95 atm %, a film density of about 0.5 g/cm 3 to about 2.5 g/cm 3 and a hardness of about 0.4 GPa or more, using the CMP slurry composition for organic films.
- the present invention provides a CMP slurry composition for organic films, which has excellent effects in polishing the organic film having high carbon content, film density and hardness.
- the present invention provides a CMP slurry composition for organic films, which shows an excellent degree of planarization on the polished surface after polishing the organic film having high carbon content, film density and hardness and allows easy removal of residues of the organic film remaining on the polishing stop film, thereby securing more uniform polishing.
- FIG. 1 shows a schematic view of a method for polishing an organic film in accordance with one embodiment of the present invention.
- substituted or unsubstituted means that a hydrogen atom in a functional group is nonsubstituted or substituted with a hydroxyl group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl
- n is 0 or 1
- m is an integer from 0 to 10
- R, R′ are each independently, hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C1 to C20 haloalkyl group, a substituted or unsubstituted C1 to C20 alkylsulfonate group, a substituted or unsubstituted C1 to C20 alkylsulfonyl group, a substituted or unsubstituted C2 to C20 alkylamide group, a substituted or unsubstituted C3 to C20 alkylester group, a substituted or unsubstituted C2 to C20 cyanoalkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted
- R, R′ are linked to each other to form a substituted or unsubstituted C3 to C20 cycloalkyl group or a substituted or unsubstituted C3 to C20 heterocycloalkyl group).
- the “functional group including P” is a functional group including P and O, for example, —P( ⁇ O)(OH) 2 , —O—P( ⁇ O)(OH) 2 , —P( ⁇ O)(OCH 2 CH 3 ) 2 , —P( ⁇ O)(C 2 H 4 C 6 H 5 )(OCH 2 CH 3 ), and the like, for instance, the “functional group including B” is a functional group including B and O, for example, —B(OH) 2 , —B(H)(CH 3 ), —B(CH 2 CH 3 ) 2 .
- an organic film fills via-holes formed therein.
- the CMP slurry composition must be capable of polishing an organic film at a sufficient polishing rate in order to planarize the deposited film and be capable of increasing the degree of planarization on the polished surface, after polishing, the residue remaining on the inorganic film must be easily removable.
- the inorganic film may be film formed with at least one of silicon oxide and silicon nitride, without being limited thereto.
- the organic film may have significantly different polishing amounts per unit time and the degree of planarization after polishing, depending upon the materials for the organic film.
- the CMP slurry composition for organic films according to the present invention is a composition for polishing an organic film having high carbon content. When the CMP slurry composition of the present invention is used for polishing the organic film, it is possible to enhance the polishing amount of the organic film per unit time and the degree of planarization of the organic film and to facilitate removal of residues from the inorganic film after polishing.
- the organic film according to the present invention has relatively higher values in terms of carbon content, film density and hardness, than typical organic films, and thus cannot be polished using a typical CMP slurry composition for organic films including polymer particles.
- the CMP slurry composition according to the present invention is capable of polishing the organic film at a high polishing amount of the organic film per unit time without deteriorating surface conditions due to scratches.
- the polishing amount of the organic film per unit time is about 500 ⁇ /min or more, for example, about 1,000 ⁇ /min or more, for example, about 500 to 5000 ⁇ /min. Within this range, a desired polishing amount can be secured.
- the organic film may have a carbon content from about 50 atom % to 95 atom %, for example, from about 65 atom % to 95 atom %, or, for example, from about 70 atom % to 92 atom %, such as about 65 atom %, 66 atom %, 67 atom %, 68 atom %, 69 atom %, 70 atom %, 71 atom %, 72 atom %, 73 atom %, 74 atom %, 75 atom %, 76 atom %, 77 atom %, 78 atom %, 79 atom %, 80 atom %, 81 atom %, 82 atom %, 83 atom %, 84 atom %, 85 atom %, 86 atom %, 87 atom %, 88 atom %, 89 atom %, 90 atom %, 91 atom %, 92 atom %, such as
- the organic film may have a film density from about 0.5 g/cm 3 to 2.5 g/cm 3 , for example, from about 1.0 g/cm 3 to 2.0 g/cm 3 , for example, from about 1.2 g/cm 3 to 1.6 g/cm 3 , for example, about 0.5 g/cm 3 , 0.6 g/cm 3 , 0.7 g/cm 3 , 0.8 g/cm 3 , 0.9 g/cm 3 , 1.0 g/cm 3 , 1.1 g/cm 3 , 1.2 g/cm 3 , 1.3 g/cm 3 , 1.4 g/cm 3 , 1.5 g/cm 3 , 1.6 g/cm 3 , 1.7 g/cm 3
- the organic film may have a hardness of about 0.4 GPa or more, for example, about 1.0 GPa or more, for example, about 1.3 GPa or more, for example, from about 1.0 GPa to 1.5 GPa, for example, about 0.4 GPa, 0.5 GPa, 0.6 GPa, 0.7 GPa, 0.8 GPa, 0.9 GPa, 1.0 GPa, 1.1 GPa, 1.2 GPa, 1.3 GPa, 1.4 GPa, or 1.5 GPa.
- the polishing amount is high, there is no scratching, and the degree of planarization on the polished surface is high.
- the organic film according to the present invention may have an acid value of substantially about 0 mgKOH/g.
- the CMP slurry composition according to the present invention has a merit that the polishing amount of the organic film per unit time applicable to the CMP process can be secured.
- the term “substantially” includes the cases where the acid value is not only 0 mgKOH/g but also 0 mgKOH/g with an acceptable margin of error.
- the organic film according to the present invention may be produced by applying a composition including a compound having a substituted or unsubstituted aromatic group to an inorganic film, followed by baking at high temperature, for example, at about 200° C. to 400° C.
- the term “compound having a substituted or unsubstituted aromatic group” refers to a compound which is not decomposed after baking and allows an organic film formed of the composition to have high carbon content.
- the unsubstituted aromatic group refers to a single or fused polycyclic aromatic group having C6 to C100, for example, C6 to C50. More particularly, the unsubstituted aromatic group may include units represented by Formulae 1-1 to 1-26:
- Z 1 to Z 18 are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C3 to C20 cycloalkenylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group, —(C ⁇ O)—, —NR a —, —CR b R c —, oxygen (O), sulfur (S), or combinations thereof, and wherein R a to R c are each independently, hydrogen, a substituted or unsubstituted C1 to C10 al
- compositions for forming an organic film which includes a compound having a substituted or unsubstituted aromatic group, will be described in detail hereinafter.
- the composition for forming the organic film may include a material including Formula 2 as the compound having a substituted or unsubstituted aromatic group:
- n 1 ⁇ n ⁇ 190
- R 1 is hydrogen, a hydroxyl group, a halogen atom, an allyl group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubsti
- R 2 is hydrogen, an amino group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C6 to C20 aryloxy group, dialkylamino group (—NRR′, wherein R, R′ are each independently a substituted or unsubstituted C1 to C10 alkyl group or a substituted or unsubstituted C6 to C10 aryl group), a hydroxyl group, a halogen atom, an allyl group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C
- R 3 is one selected from among substituted or unsubstituted
- R 2 may be a substituted or unsubstituted C1 to C10 alkoxy group.
- the material comprising Formula 2 can increase carbon content, film density and hardness of the organic film formed after baking the organic film composition.
- a detailed process of preparing the material comprising Formula 2 can be found in Korean Patent No. 10-0866015.
- the organic film composition according to the first embodiment may further include at least one of a crosslinking component, an acid catalyst and an organic solvent, in addition to the material comprising Formula 2.
- the organic film composition may include about 1 wt % to 20 wt % of the material comprising Formula 2, about 0.1 wt % to 5 wt % of the crosslinking component, about 0.001 wt % to 0.05 wt % of the acid catalyst, and about 75 wt % to 98.8 wt % of the organic solvent.
- the crosslinking component may include at least one of a melamine resin(specific examples may include N-methoxymethyl-melamine resin, N-butoxy methylmelamine resin), a methylated or butylated urea resin, an amino resin, a glycoluril derivative represented by Formula 3, a bisepoxy compound represented by Formula 4, and a melamine derivative represented by Formula 5:
- the acid catalyst may include at least one of p-toluene sulfonate monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, and alkyl esters of organic sulfonic acid.
- Any organic solvent capable of sufficiently dissolving the compound having a substituted or unsubstituted aromatic group may be used as the organic solvent, for example, examples of the organic solvent may include propyleneglycolmonomethyletheracetate, cyclohexanone, ethyl lactate, and the like.
- the organic film composition according to the first embodiment may be coated to a thickness of about 500 ⁇ to 4000 ⁇ , followed by baking at about 200° C. to 400° C. for about 10 seconds to 10 minutes to form an organic film, without being limited thereto.
- the composition for forming the organic film may include a material represented by Formula 6 as the compound having a substituted or unsubstituted aromatic group:
- R 4 to R 9 , X 1 to X 6 are each independently, hydrogen, a hydroxyl group, a halogen atom, an allyl group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstit
- n 1 to n 6 are each independently 0 to 2, 2 ⁇ n 1 +n 2 +n 3 +n 4 +n 5 +n 6 ⁇ 6)
- R 4 to R 9 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a functional group including P, or a functional group including B.
- X 1 to X 6 are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C20 alkylamine group, an amino group, a functional group including P, or a functional group including B.
- the organic film composition according to the second embodiment is substantially the same as the organic film composition according to the first embodiment except that the organic film composition according to the second embodiment includes a material represented by Formula 6 instead of the material comprising Formula 2, as the compound having a substituted or unsubstituted aromatic group.
- a material represented by Formula 6 instead of the material comprising Formula 2, as the compound having a substituted or unsubstituted aromatic group.
- the following is a description of the material represented by Formula 6.
- the material represented by Formula 6 may be a mixture of two or more compounds, in which positions of substituents are different from each other. Further, the material represented by Formula 6 includes an aromatic ring having strong absorption at short wavelength ranges (for example, about 193 nm, about 248 nm), and thus performs crosslinking reaction at high temperature without using a particular catalyst, which prevents contamination by the catalyst, specifically by an acid.
- the compound represented by Formula 6 having an aromatic group may have an average molecular weight from about 500 g/mol to 4000 g/mol. Within this range, the organic film composition can form an organic film having an appropriate thickness or an excellent thin film.
- the material represented by Formula 6 may increase carbon content, film density and hardness of the organic film formed after baking the organic film composition.
- the material represented by Formula 6 may be produced by a typical method, for example, by reacting coronene with acetylchloride, benzoylchloride, naphthoylchloride, or cyclohexanecarbonylchloride, followed by reducing the resultant material, without being limited thereto.
- a more detailed process for producing the material represented by Formula 6 can be found in Korean Patent No. 10-1311942.
- the composition for forming the organic film may include a polymer containing aromatic groups selected from (i) a compound represented by Formula 7, (ii) a mixture of the compound represented by Formula 7 and a compound represented by Formula 8, and (iii) a compound represented by Formula 9, as the compound having a substituted or unsubstituted aromatic group:
- R 10 is one selected from among substituted or unsubstituted
- R 11 is hydrogen, a hydroxyl group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C1 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to
- R 12 is one selected from among substituted or unsubstituted
- R 13 is one selected from among substituted or unsubstituted
- R 14 is one selected from among substituted or unsubstituted
- R 15 is one selected from among substituted or unsubstituted
- R in R 10 , R 13 , and R 15 is each independently hydrogen, a hydroxyl group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C1 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group,
- the organic film composition according to the third embodiment is substantially the same as the organic film composition according to the first embodiment except that the organic film composition according to the third embodiment includes the polymer containing aromatic groups instead of the material comprising Formula 2, as the compound having a substituted or unsubstituted aromatic group.
- the following is a description of the polymer containing aromatic groups.
- the polymer containing aromatic groups may increase carbon content, film density and hardness of the organic film formed after baking the organic film composition.
- the polymer containing aromatic groups may be produced by a typical method. A detailed process for producing the polymer can found in Korean Patent No. 10-0908601.
- a composition for forming the organic film may include at least two of the material comprising Formula 2; the material represented by Formula 6; and the polymers containing aromatic groups selected from (i), (ii), and (iii), as the compounds having a substituted or unsubstituted aromatic group.
- the composition for forming the organic film according to the fourth embodiment is substantially the same as the composition for forming the organic film according to the first embodiment except that the organic film composition according to the fourth embodiment includes at least two the compounds having a substituted or unsubstituted aromatic group.
- the CMP slurry composition for organic films according to one embodiment of the present invention may include at least one of polar solvents and non-polar solvents; and a metal oxide abrasive, and may be acidic.
- the composition can polish the organic film of the present invention at a high polishing amount without scratching and can increase the degree of planarization on a polished surface.
- the polar and/or non-polar solvents may serve to reduce friction when the organic film having high carbon content is polished with the metal oxide abrasive.
- the polar and/or non-polar solvents may include water, for example, ultrapurified water, organic amines, organic alcohols, organic alcohol amines, organic ethers, organic ketones, and the like.
- ultrapurified water may be used as the polar and/or non-polar solvents.
- the polar and/or non-polar solvents may be present in the balance amount in the CMP slurry composition.
- the metal oxide abrasive may serve to polish the organic film having high carbon content, high film density and high hardness at a high polishing amount.
- the metal oxide abrasive may enhance the degree of planarization on the polished surface without scratching when the organic film according to the present invention is polished with the metal oxide abrasive.
- the metal oxide abrasive may include at least one of silica, alumina, ceria, titania, and zirconia. Particularly, silica may have better dispersion stability. Ceria may provide a high polishing rate even in the case where an oxidant is absent or present in an extremely small amount in the slurry composition.
- the metal oxide abrasive is composed of spherical particles and has an average particle size from about 10 nm to about 150 nm, for example, from about 30 nm to 70 nm, for example, about 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, or 70 nm. Within this range, the metal oxide abrasive can secure a sufficient polishing rate with respect the organic film of the present invention without scratching and enhance the degree of planarization.
- the metal oxide abrasive is present in an amount of about 0.1 wt % to 20 wt %, for example about 0.1 wt % to 15 wt %, for example, about 0.1 wt % to 5 wt %, for example, about 0.1 wt %, 0.2 wt %, 0.3 wt %, 0.4 wt %, 0.5 wt %, 0.6 wt %, 0.7 wt %, 0.8 wt %, 0.9 wt %, 1 wt %, 1.1 wt %, 1.2 wt %, 1.3 wt %, 1.4 wt %, 1.5 wt %, 1.6 wt %, 1.7 wt %, 1.8 wt %, 1.9 wt %, 2 wt %, 2.1 wt %, 2.2 wt %, 2.3 wt %, 2.4
- the slurry composition can secure a sufficient polishing rate with respect the organic film of the present invention without scratching and enhance the dispersion stability.
- the slurry composition secures an enhanced polishing rate with respect to the organic film and a low polishing rate with respect to an inorganic film by increasing the average particle size of the metal oxide abrasive while reducing the content of the metal oxide abrasive in the slurry composition.
- the CMP slurry composition may be acidic and thus has high polishing selectivity ratio of the organic film over the inorganic film, and can enhance the polishing amount per unit time with respect to the organic film and the degree of planarization.
- the CMP slurry composition may have a pH value of about 6 or less, for example, about 5 or less, for example, 1 to 5, for example, about 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4, 4.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, or 5.
- the pH of the CMP slurry composition according to one embodiment of the present invention may be adjusted in this range of pH using, for example, a pH adjusting agent.
- a pH adjusting agent may include an inorganic acid, for example, at least one of nitric acid, phosphoric acid, hydrochloric acid, and sulfuric acid, and an organic acid, for example, an organic acid having a pKa value of 6 or less, for example, at least one of acetic acid and citric acid, without being limited thereto.
- the CMP slurry composition may further include an additive.
- the CMP slurry composition may further include a polishing accelerator as an additive.
- the polishing accelerator suppresses the polishing rate of the inorganic film, thereby increasing polishing selectivity ratio of the organic film over the inorganic film.
- the polishing accelerator may include at least one of organic acids such as malic acid, citric acid, formic acid, glutaric acid, oxalic acid, phthalic acid, succinic acid, tartaric acid, maleic acid, and malonic acid.
- the polishing accelerator may be present in an amount of about 0.02 wt % to 0.5 wt % in the CMP slurry composition. Within this range, the composition has no detrimental effect on the polishing rate, dispersion stability of the slurries, and surface properties of organic carbon films.
- the CMP slurry composition may further include a pH adjusting agent in order to make the pH of the composition acidic.
- the pH adjusting agent may be present in an amount such that the pH of the slurry composition can be suitably adjusted, thereby increasing polishing selectivity of the organic film over the inorganic film.
- the CMP slurry composition for organic films according to another embodiment may include a polar and/or non-polar solvent, a metal oxide abrasive, and an oxidant, and thus may be acidic.
- the CMP slurry composition according to the another embodiment may further include an oxidant, thereby increasing polishing selectivity ratio of the organic film over the inorganic film, the polishing rate of the organic film, and the degree of planarization on the polished surface.
- the CMP slurry composition according to this embodiment is substantially the same as the CMP slurry composition according to the one embodiment except that the CMP slurry composition according to this embodiment further includes the oxidant. The following is a description for the oxidant.
- the oxidant oxidizes a surface layer of the organic film to facilitate polishing of the organic film.
- the oxidant can make the surface of the organic film smooth, thereby improving roughness of the organic film even after polishing. Further, the oxidant facilitates removal of residues of the organic film remaining on the inorganic film, thereby securing uniform polishing.
- the oxidant may include at least one of metal salts in a multivalent oxidation state and transition metal chelates.
- multivalent refers to divalent or higher, for example, trivalent or higher, for example, tetravalent or higher.
- the metal salts in a multivalent oxidation state are capable of increasing the polishing rate of the organic film while reducing the polishing rate of the inorganic film.
- the metal salts may include metals such as transition metals, lanthanides, and the like, and may further include halogen, ammonium, nitrate, and the like.
- the metal salts may include ceric ammonium salts, ferric halogen salts, ferric nitrate salts, and the like.
- the metal salts may include ceric ammonium nitrate, ferric nitrate, ferric chloride, and the like.
- the transition metal chelates can increase the polishing rate of the organic film while reducing the polishing rate of the inorganic film.
- the transition metals include typical transition metals belonging to Group III to Group XII of the periodic table, for example, iron, copper, manganese, or chromium.
- chelates may include oxalic acid, a carboxylic acid substituted with an amino group (for example, aminopolycarboxylate such as iminodiacetic acid, ethylenediaminedisuccinic acid, iminodisuccinic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid; alpha-amino acid such as glycine, beta-amino acid), a carboxylic acid substituted with a hydroxyl group (for example, polycarboxylic acids containing a hydroxyl group such as glycolic acid, lactic acid, malic acid, citric acid, and tartaric acid), phosphonocarboxylic acid, aminophosphonic acid, and combinations thereof.
- aminopolycarboxylate such as iminodiacetic acid, ethylenediaminedisucc
- transition metal chelates may include at least one of Fe-containing compounds such as propylene diamine tetraacetic acid-Fe and the like, and Mn-containing compounds such as propylene diamine tetraacetic acid-Mn and the like, without being limited thereto.
- the oxidant may be present in an amount of about 0.001 wt % to 15 wt % in the CMP slurry composition, for example, about 0.01 wt % to 5 wt %, for example, about 0.05 wt % to 3 wt %, for example, about 0.05 wt %, 0.1 wt %, 0.15 wt %, 0.2 wt %, 0.25 wt %, 0.3 wt %, 0.35 wt %, 0.4 wt %, 0.45 wt %, 0.5 wt %, 0.55 wt %, 0.6 wt %, 0.65 wt %, 0.7 wt %, 0.8 wt %, 0.85 wt %, 0.9 wt %, 0.95 wt %, 1 wt %, 1.5 wt %, 2 wt %, 2.5 wt %, or 3 w
- the CMP slurry composition can maintain suitable etching ability with respect to the organic film.
- the CMP slurry composition may be acidic and improve stability of the oxidant, thereby enhancing the polishing rate of the organic film, the degree of planarization on the polished surface, and polishing selectivity ratio of the organic film over the inorganic film.
- the method for polishing an organic film according to the present invention may include polishing an organic film having high carbon content, high film density and high hardness using the CMP slurry composition for organic films according to the present invention.
- the CMP slurry composition may include CMP slurry compositions for organic films according to the embodiments of the present invention.
- FIG. 1 shows a stack structure of a silicon wafer, an inorganic film, and an organic carbon film before polishing.
- a silicon wafer 100 is subjected to patterning to have an engraved portion thereon, followed by deposition of an inorganic film 110 on the silicon wafer 100 .
- an organic carbon film 120 is deposited on the inorganic film, followed by baking at about 200° C. to about 400° C.
- T indicates a virtual polishing stop line.
- a CMP slurry composition is applied to the organic film shown in FIG. 1( a ), followed by placing a polishing pad thereon and rotating the silicon wafer 100 to polish the stack structure. Polishing is performed until the wafer reaches the polishing stop line T, as shown in FIG. 1( b ).
- a 2000 ml three-necked flask provided with a thermometer, a condenser, a mechanical stirrer and a dropping funnel was dipped in an oil bath at 140° C. Heating and stirring by a magnet were performed on a hot plate, and cooling water was set to 40° C.
- 220 g (1 mol) of 1-methoxy pyrene was placed in the flask, followed by adding 138 g (1.0 mol) of 1,4-bismethoxymethylbenzene, which in turn was dissolved in 656 g of propyleneglycol monomethyletheracetate. Thereafter, 4.6 g (0.03 mol) of diethyl sulfate was added to the solution.
- a reaction completion point was determined by measuring the molecular weight of the reactant at certain time intervals during polymerization. Samples for measuring the molecular weight were prepared by cooling 1 g of the reactant to room temperature, obtaining 0.02 g of the mixture therefrom, followed by diluting the reactant with tetrahydrofuran such that the solid content was 4 wt %. In order to finish reaction at a predetermined reaction completion point, 4.48 g (0.03 mol) of triethanolamine was added as a neutralizing agent to the flask, followed by stirring. Subsequently, the reactant was slowly cooled to room temperature.
- the reactant was diluted with 500 g of propyleneglycolmonomethyletheracetate. Next, a solvent was added to a 2000 ml separation funnel. 4 kg of a mixture of methanol and ethylene glycol in a ratio of 90:10 g/g was prepared. The synthesized polymer solution was dropped into the alcohol mixture under severe stirring. The resultant polymer was harvested from the bottom of the flask and the supernatant was separately stored. After removing the supernatant, methanol was removed from the final reactant in a rotary evaporator at 60° C. for 10 minutes under reduced pressure.
- the obtained copolymer included the unit of Formula 10 and had a weight average molecular weight of 4000 and dispersibility of 2.3.
- a solution prepared by dissolving 30.1 g (0.1 mol) of coronene, 47.1 g (0.6 mol) of acetyl chloride, 79.8 g (0.6 mol) of trichloroaluminium in 1000 g of toluene was added to a 2 L four-necked flask provided with a mechanical stirrer and a condenser, followed by stirring the solution with the stirrer and reacting for 10 hours. After completion of the reaction, trichloroaluminium was removed from the reactant using water. 37.83 g (1.0 mol) of sodium borohydride was added to the obtained compound and then reaction was carried out for 17 hours.
- a silica film as a polishing stop film was deposited to a thickness of 5000 on a patterned wafer having an engraved pattern formed on the surface thereof.
- an organic film was formed to a thickness of 2650.
- the organic film was produced by applying the composition prepared in Preparative Example 1 to the silica film, following baking at 400° C.
- the composition prepared in Preparative Example 1 was applied and baked at 400° C. for 120 seconds to obtain a specimen having a thickness of 4700 to 4800.
- Hardness of the specimen was measured using a Nanoindentor (Hysitron TI750 Ubi). Hardness was measured by loading a tip of Nanoindentor on the specimen for 5 seconds, holding the tip for 2 seconds and unloading the tip for 5 seconds. The hardness was 0.9 GPa.
- the carbon content of the same specimen was measured using an element analyzer (EA1112, Thermo). Specifically, the carbon content was measured by burning a sample in a correct amount in the presence of O 2 , and the carbon content was 72 atm %.
- the film density of the same specimen was measured using an XRR (X-RAY REFLECTIVITY) tester (X'Pert PRO, PANalytical). Specifically, the refraction pattern obtained by irradiating X ray was compared with a known refraction pattern. The film density was 1.4 g/cm 3 . The acid value of the same specimen was measured and found to be 0 mg KOH/g.
- CMP slurry compositions including ultrapurified water and components as listed in Table 1 were prepared and used for polishing under following polishing conditions.
- a silica film as a polishing stop film was deposited to a thickness of 5000 on a patterned wafer having an engraved pattern on the surface thereof.
- an organic film was formed to a thickness of 2650.
- the organic film was produced by applying the composition prepared in Preparative Example 2 to the silica film, following baking at 400° C.
- the composition prepared in Preparative Example 2 was applied and baked at 400° C. for 120 seconds to obtain a specimen having a thickness of 4700 to 4800.
- Hardness, carbon content, film density and acid value of the specimen were measured in the same manner as in Example 1.
- the hardness was 1.5 GPa
- the carbon content was 80 atm %
- the film density was 1.7 g/cm 3
- the acid value was 0 mg KOH/g.
- CMP slurry compositions including ultrapurified water and components as listed in Table 2 were prepared and used for polishing under following polishing condition.
- CMP slurry compositions were prepared and used for polishing under following polishing condition in the same manner as in Example 1, except that the CMP slurry compositions having the components as listed in Table 1 were used.
- CMP slurry compositions were prepared and used for polishing under following polishing condition in the same manner as in Example 2, except that the CMP slurry compositions having the components as listed in Table 2 were used.
- A Metal oxide abrasive: (a1) Ceria having an average particle size of 60 nm (SOLVAY Inc.), (a2) Colloidal silica having an average particle size of 35 nm (Evonic Inc.)
- polishing pad As a polishing pad, an H0800 CMP pad manufactured by FUJIBO Inc. was used. Polishing was performed for 1 minute using a 200 mm MIRRA device manufactured by Applied Materials, AMAT Inc., under the condition of a compressing pressure of 1.0 psi, a slurry flow rate of 200 mL/minute, a table and spindle rate of 90 rpm. Polishing amounts were measured and shown in Tables 1 and 2. The degree of planarization on the polished surface was determined by checking whether the CMP slurry composition uniformly polished the organic film, as compared with the inorganic film. After polishing as mentioned above, the thickness of the polished surface was measured using a thin film thickness measuring device (ST4000, K-MAC) (unit:), and standard deviation was calculated from the result.
- ST4000, K-MAC thin film thickness measuring device
- the CMP slurry composition for organic films of the present invention had a high polishing rate and a high degree of planarization on the polished surface of the organic film having high carbon content, film density and hardness. Further, it could also be seen that, as compared with Example 1, Examples 2 to 18 had an enhanced polishing rate and an enhanced degree of planarization on the polished surface of the organic film having high carbon content, film density and hardness by further including a specific oxidant.
- the present invention provides a CMP slurry composition for organic films having excellent effects in polishing the organic film having high carbon content, film density and hardness. Further, the present invention provides a CMP slurry composition for organic films, which shows an excellent degree of planarization on the polished surface after polishing the organic film having high carbon content, film density and hardness and allows easy removal of residues of the organic film remaining on the polishing stop film, thereby securing more uniform polishing.
- compositions of Comparative Examples in which the metal oxide abrasive was included and was not acidic showed a significantly low polishing rate with respect to the organic film having high carbon content, film density and hardness, and a much lower degree of planarization on the polished surface than the composition of Examples.
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KR10-2013-0042551 | 2013-04-17 | ||
KR20130042551 | 2013-04-17 | ||
PCT/KR2014/003367 WO2014171766A1 (ko) | 2013-04-17 | 2014-04-17 | 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
KR10-2014-0045953 | 2014-04-17 | ||
KR1020140045953A KR101659144B1 (ko) | 2013-04-17 | 2014-04-17 | 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
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US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
US10428242B2 (en) | 2017-03-29 | 2019-10-01 | Samsung Electronics Co., Ltd. | Slurry composition for chemical mechanical polishing |
US10723916B2 (en) | 2013-04-17 | 2020-07-28 | Samsung Sdi Co., Ltd. | Organic film CMP slurry composition and polishing method using same |
WO2023032930A1 (ja) * | 2021-08-31 | 2023-03-09 | 株式会社レゾナック | 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020086618A1 (en) * | 2000-12-25 | 2002-07-04 | Nissan Chemical Industries, Ltd. | Cerium oxide sol and abrasive |
US20030228763A1 (en) * | 2002-06-07 | 2003-12-11 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US6830503B1 (en) * | 2002-01-11 | 2004-12-14 | Cabot Microelectronics Corporation | Catalyst/oxidizer-based CMP system for organic polymer films |
US20070069176A1 (en) * | 2005-09-26 | 2007-03-29 | Fuji Photo Film Co., Ltd. | Aqueous polishing liquid and chemical mechanical polishing method |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW274625B (zh) | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
KR100481651B1 (ko) | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
KR100535074B1 (ko) | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
JP2004022748A (ja) | 2002-06-14 | 2004-01-22 | Seimi Chem Co Ltd | 半導体集積回路の有機絶縁膜の研磨方法 |
JP4160569B2 (ja) | 2004-05-31 | 2008-10-01 | 株式会社東芝 | 半導体装置の製造方法 |
JP2006041252A (ja) * | 2004-07-28 | 2006-02-09 | Hitachi Chem Co Ltd | Cmp研磨剤、その製造方法及び基板の研磨方法 |
JP2007138133A (ja) | 2005-10-21 | 2007-06-07 | Hitachi Chem Co Ltd | 有機膜研磨用研磨液及びこれを用いた有機膜の研磨方法 |
KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
JP2007154175A (ja) | 2005-11-11 | 2007-06-21 | Hitachi Chem Co Ltd | 有機膜研磨用研磨液及び有機膜の研磨方法 |
KR100866015B1 (ko) | 2007-05-25 | 2008-10-30 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한 재료의 패턴화방법 |
KR100908601B1 (ko) | 2007-06-05 | 2009-07-21 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법 |
KR20100080070A (ko) * | 2008-12-31 | 2010-07-08 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
JP5515535B2 (ja) | 2009-09-08 | 2014-06-11 | 日立化成株式会社 | 研磨液 |
KR101311942B1 (ko) | 2009-12-31 | 2013-09-26 | 제일모직주식회사 | 레지스트 하층막용 방향족 고리 함유 화합물 및 이를 포함하는 레지스트 하층막용 조성물 |
US8920667B2 (en) * | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
CN105143390B (zh) | 2013-04-17 | 2019-08-13 | 三星Sdi株式会社 | 有机膜化学机械研磨浆料组成物及使用其的研磨方法 |
WO2014171766A1 (ko) | 2013-04-17 | 2014-10-23 | 제일모직 주식회사 | 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
-
2014
- 2014-04-17 CN CN201480021926.7A patent/CN105143390B/zh active Active
- 2014-04-17 KR KR1020140045953A patent/KR101659144B1/ko active IP Right Grant
- 2014-04-17 US US14/785,014 patent/US20160068711A1/en not_active Abandoned
- 2014-04-17 TW TW103114317A patent/TWI655281B/zh active
-
2018
- 2018-08-10 US US16/100,561 patent/US10723916B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020086618A1 (en) * | 2000-12-25 | 2002-07-04 | Nissan Chemical Industries, Ltd. | Cerium oxide sol and abrasive |
US6830503B1 (en) * | 2002-01-11 | 2004-12-14 | Cabot Microelectronics Corporation | Catalyst/oxidizer-based CMP system for organic polymer films |
US20030228763A1 (en) * | 2002-06-07 | 2003-12-11 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US20070069176A1 (en) * | 2005-09-26 | 2007-03-29 | Fuji Photo Film Co., Ltd. | Aqueous polishing liquid and chemical mechanical polishing method |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10723916B2 (en) | 2013-04-17 | 2020-07-28 | Samsung Sdi Co., Ltd. | Organic film CMP slurry composition and polishing method using same |
US9991127B2 (en) | 2016-01-15 | 2018-06-05 | Samsung Electronics Co., Ltd. | Method of fabricating integrated circuit device by using slurry composition |
US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
US10428242B2 (en) | 2017-03-29 | 2019-10-01 | Samsung Electronics Co., Ltd. | Slurry composition for chemical mechanical polishing |
WO2023032930A1 (ja) * | 2021-08-31 | 2023-03-09 | 株式会社レゾナック | 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法 |
WO2023032028A1 (ja) * | 2021-08-31 | 2023-03-09 | 株式会社レゾナック | 研磨液、研磨方法、半導体部品の製造方法、及び、接合体の製造方法 |
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CN105143390B (zh) | 2019-08-13 |
US10723916B2 (en) | 2020-07-28 |
KR101659144B1 (ko) | 2016-09-23 |
KR20140125316A (ko) | 2014-10-28 |
TWI655281B (zh) | 2019-04-01 |
TW201500531A (zh) | 2015-01-01 |
US20180362807A1 (en) | 2018-12-20 |
CN105143390A (zh) | 2015-12-09 |
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