WO2014171766A1 - 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 - Google Patents
유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 Download PDFInfo
- Publication number
- WO2014171766A1 WO2014171766A1 PCT/KR2014/003367 KR2014003367W WO2014171766A1 WO 2014171766 A1 WO2014171766 A1 WO 2014171766A1 KR 2014003367 W KR2014003367 W KR 2014003367W WO 2014171766 A1 WO2014171766 A1 WO 2014171766A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substituted
- group
- unsubstituted
- organic film
- cmp slurry
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 120
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- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- NSNPSJGHTQIXDO-UHFFFAOYSA-N naphthalene-1-carbonyl chloride Chemical compound C1=CC=C2C(C(=O)Cl)=CC=CC2=C1 NSNPSJGHTQIXDO-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- ZJAOAACCNHFJAH-UHFFFAOYSA-N phosphonoformic acid Chemical class OC(=O)P(O)(O)=O ZJAOAACCNHFJAH-UHFFFAOYSA-N 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical class NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
Definitions
- the present invention relates to an organic film CMP slurry composition and a polishing method using the same.
- the semiconductor manufacturing method includes forming an inorganic film such as a silicon oxide film and a silicon nitride film on a patterned silicon wafer, and gap-filling via-holes formed in the inorganic film. It includes a process to make.
- the gap-filling process is a process for filling the via-holes with the organic film material, and after the gap-filling process, a process of removing and planarizing the excessively formed organic film should be accompanied.
- the current spotlight is polishing by chemical mechanical polishing (CMP).
- the conventional organic film CMP slurry composition includes polymer abrasive particles because the organic film should be polished with a high polishing amount per unit time so as not to deteriorate surface conditions such as scratches.
- the organic film does not have the same material, depending on the organic film, when polishing with the conventional organic film CMP slurry composition, the flatness of the polished surface was also increased and the desired polishing amount could not be obtained.
- a metal oxide abrasive used for polishing a metal film such as silicon is used for polishing an organic film, a desired polishing amount may not be obtained depending on the organic film, and / or scratches may occur, resulting in low polishing surface flatness. .
- An object of the present invention is to provide an organic film CMP slurry composition having an excellent polishing effect on an organic film having high carbon content, film density and hardness.
- Another object of the present invention is that after polishing the surface of the organic film having high carbon content, film density and hardness, the polishing surface flatness is good, and the residue of the organic film material present in the polishing stop film layer can be easily removed. It is to provide an organic film CMP slurry composition capable of more uniform polishing.
- the organic film CMP slurry composition of the present invention comprises at least one of a polar solvent and a nonpolar solvent; And a metal oxide abrasive, which is acidic, and can polish an organic film having a carbon content of about 50 to 95 atom%.
- organic film polishing method of the present invention using the organic film CMP slurry composition, polishing an organic film having a carbon content of about 50 to 95 atm%, a film density of about 0.5 to 2.5 g / cm 3, and a hardness of about 0.4 GPa or more. It may include.
- the present invention provides an organic film CMP slurry composition having excellent polishing effect on an organic film having high carbon content, film density, and hardness.
- the present invention provides a more uniform surface after polishing for organic films having high carbon content, film density, and hardness, and can more easily remove residues of organic film materials present in the polishing stop film layer.
- An organic film CMP slurry composition capable of polishing was provided.
- 1 is a schematic diagram of an organic film polishing method of an embodiment of the present invention.
- substituted or unsubstituted means that a hydrogen atom in a functional group is a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted A substituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 Aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C1
- the "functional group including P” may be represented by the following Chemical Formula A
- the “functional group including B” may be represented by the following Chemical Formula B:
- R, R ' are each independently hydrogen, hydroxyl, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or Unsubstituted C1 known C20 haloalkyl group, substituted or unsubstituted C1 to C20 alkylsulfonate group, substituted or unsubstituted C1 to C20 alkylsulfonyl group, substituted or unsubstituted C2 to C20 alkylamide group, Substituted or unsubstituted C3 to C20 alkyl ester group, substituted or unsubstituted C2 to C20 cyanoalkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C30 aryl group, substituted Or an
- R, R ' are linked to each other to form a substituted or unsubstituted C3 to C20 cycloalkyl group or a substituted or unsubstituted C3 to C20 heterocycloalkyl group).
- “functional group comprising B” The functional group containing O may be, for example, -B (OH) 2 , -B (H) (CH 3 ), -B (CH 2 CH 3 ) 2 .
- the organic film fills the generated via-holes.
- the CMP slurry composition should be able to polish the organic film to a sufficient polishing rate and increase the flatness of the polished surface to remove the residues remaining in the inorganic film after polishing.
- the inorganic film may be a film formed of at least one of silicon oxide and silicon nitride, but is not limited thereto.
- the organic film may have a large difference in polishing amount per unit time and flatness after polishing depending on the material of the organic film.
- the organic film CMP slurry composition of the present invention is a composition for polishing an organic film having a high carbon content.
- the organic film CMP slurry composition can increase the amount and flatness of the organic film per unit time when the organic film is polished, and can easily remove residues remaining in the inorganic film after polishing. have.
- the organic film to be polished of the present invention has a relatively high carbon content, film density, and degree of cure compared to a conventional organic film, and thus cannot be polished with an organic film CMP slurry composition including conventional polymer particles.
- the CMP slurry composition of the present invention can polish the organic film with a high polishing amount per unit time without deteriorating the surface state due to scratching.
- the amount of polishing per unit time for the organic film may be about 500 kPa / min or more, for example, about 1,000 kPa / min or more, for example, about 500 to 5000 kPa / min, and may be applied to the process in the above range. Amount of polishing can be secured.
- the organic film has a carbon content of about 50 to 95 atom% such as about 65 to 95 atom% or about 70 to 92 atom%, such as about 65,66,67,68,69,70,71, 72,73,74,75,76,77,78,79,80,81,82,83,84,85,86,87,88,89,90,91,92,93,94 or 95 atom%
- the polishing amount is high, scratches do not occur, and the flatness of the polishing surface may be high.
- the organic film has a film density of about 0.5 to 2.5 g / cm 3 , for example about 1.0 to 2.0 g / cm 3 , for example about 1.2 to 1.6 g / cm 3 , for example about 0.5, 0.6, 0.7, 0.8, 0.9 , 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5 g / cm 3 , when polishing with a metal oxide abrasive in the above range
- the polishing amount is high, no scratch occurs, and the flatness of the polishing surface may be high.
- the organic film has a hardness of about 0.4 GPa or more, for example about 1.0 GPa or more, for example about 1.3 GPa or more, for example about 1.0 to 1.5 GPa, for example about 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, It may be 1.0, 1.1, 1.2, 1.3, 1.4, 1.5GPa, and in the above range when polishing with a metal oxide abrasive, the polishing amount is high, no scratches may occur and the flatness of the polishing surface may be high.
- the organic film to be polished of the present invention may have an acid value of about 0 mgKOH / g substantially.
- an organic film CMP slurry composition including a conventional polymer abrasive there is a problem that the polishing rate is lowered.
- the CMP slurry composition of the present invention can secure the amount of polishing per unit time of the organic film applicable to the CMP process.
- substantially includes not only the case where the acid value is 0 mgKOH / g but also a slight error at 0 mgKOH / g.
- the organic film to be polished of the present invention may be prepared by applying a composition containing a compound having a substituted or unsubstituted aromatic group on the inorganic film and then thermosetting (baking) at a high temperature, for example, about 200 to 400 ° C. .
- the "compound having a substituted or unsubstituted aromatic group” refers to a compound that does not decompose even after thermal curing so that the organic film formed of the composition can exhibit a high carbon content.
- the unsubstituted aromatic group means a single or fused polycyclic aromatic group having 6 to 100 carbon atoms, for example, 6 to 50 carbon atoms, and specifically, may include units of the following Chemical Formulas 1-1 to 1-26.
- the composition for forming an organic film may be a compound having a substituted or unsubstituted aromatic group may include a material including the following formula (2):
- n 1 ⁇ n ⁇ 190
- R 1 is hydrogen, a hydroxy group, a halogen atom, an allyl group, thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalky
- R 2 is hydrogen, an amino group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C6 to C20 aryloxy group, a dialkylamino group (-NRR ', where R and R' are independently substituted with each other) Or unsubstituted C1 to C10 alkyl group or substituted or unsubstituted C6 to C10 aryl group), hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or Unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C
- R 3 is substituted or unsubstituted
- R 2 may be a substituted or unsubstituted C 1 to C 10 alkoxy group.
- the material including Chemical Formula 2 may increase carbon content, film density, and hardness after thermal curing of the organic film composition, and refer to Korean Patent No. 10-0866015 for a more detailed method of manufacturing the same.
- the composition of the first embodiment may further include at least one of a crosslinking component, an acid catalyst, and an organic solvent, in addition to the material including Chemical Formula 2. Specifically, about 1 to 20 wt% of the material represented by Formula 2, about 0.1 to 5 wt% of the crosslinking component, about 0.001 to 0.05 wt% of the acid catalyst, and about 75 to 98.8 wt% of the organic solvent.
- the crosslinking component may be a melamine resin (eg, N-methoxymethyl-melamine resin, N-butoxymethylmelamine resin), methylated or butylated urea resin, amino resin, glycoluril derivative of Formula 3, Bisepoxy compound, may include one or more of the melamine derivative of formula (5):
- Acid catalysts include p-toluenesulfonic acid monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl of euphonic acid It may include one or more of the esters.
- the organic solvent is not particularly limited as long as it is an organic solvent having sufficient solubility in a compound having a substituted or unsubstituted aromatic group, and examples thereof include propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate and the like.
- composition for forming an organic film of the first embodiment may be coated with a thickness of about 500 to 4000 kPa, and thermally cured at about 200 to 400 ° C. for about 10 seconds to 10 minutes to form an organic film, but is not limited thereto.
- the composition for forming an organic film may be a compound having a substituted or unsubstituted aromatic group and may include a material represented by the following formula (6):
- X 1 To X 6 are each independently hydrogen, hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted Or an unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 Cycloalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C
- n 1 to n 6 are each independently in a range of 0 to 2, and 2 ⁇ n 1 + n 2 + n 3 + n 4 + n 5 + n 6 ⁇ 6 ).
- R 4 to R 9 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or It may be an unsubstituted C3 to C20 cycloalkenyl group, a functional group including P, or a functional group including B.
- X 1 to X 6 may be each independently hydrogen, a hydroxy group, a substituted or unsubstituted C 1 to C 20 alkylamine group, an amino group, a functional group including P, a functional group including B.
- the compound having a substituted or unsubstituted aromatic group is substantially the same as the organic film composition of the first embodiment except that the compound represented by Chemical Formula 6 is used instead of the material represented by Chemical Formula 2. Therefore, hereinafter, only the substance represented by Chemical Formula 6 will be described.
- the material represented by Chemical Formula 6 may be a mixture of two or more compounds having different positions of substituents, and may include an aromatic ring having strong absorption in a short wavelength region (for example, about 193 nm and 248 nm), and thus do not use a special catalyst. If not, the crosslinking reaction may be performed at a high temperature, thereby preventing contamination by a catalyst, particularly an acid, and the aromatic group compound of Formula 6 may have an average molecular weight of about 500 to 4000 g / mol, and the thickness of the organic film may be implemented or A good thin film can be formed.
- the material represented by Chemical Formula 6 may increase carbon content, film density, and hardness after thermal curing of the organic film composition.
- the material represented by Chemical Formula 6 may be prepared by a conventional method, for example, it may be prepared by reacting and reducing acetyl chloride, benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited.
- acetyl chloride benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited.
- Korea Patent Registration No. 10-1311942 For more detailed manufacturing method refer to Korea Patent Registration No. 10-1311942.
- the organic film composition may include an aromatic group-containing polymer selected from (i), (ii) and (iii) as a compound having a substituted or unsubstituted aromatic group:
- n and n are each 1 ⁇ n ⁇ 750, 1 ⁇ m ⁇ 750, and 2 ⁇ m + n ⁇ 1500,
- R 10 is substituted or unsubstituted
- R 11 is hydrogen, a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or Unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or
- R 12 is substituted or unsubstituted
- R 13 is substituted or unsubstituted
- R 14 is substituted or unsubstituted
- R 15 is substituted or unsubstituted
- R at R 10 , R 13 and R 15 are each independently hydrogen, hydroxy group, halogen atom, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted or Unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 Heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstitute
- the compound having a substituted or unsubstituted aromatic group is substantially the same as the organic film composition of the first embodiment except that the aromatic group-containing polymer is included in place of the material represented by Chemical Formula 2. Therefore, hereinafter, only the aromatic group-containing polymer will be described.
- the aromatic group-containing polymer may increase carbon content, film density and hardness after thermal curing of the organic film composition, and may be prepared by a conventional method, and refer to Korean Patent No. 10-0908601 for more details.
- the organic film composition is a compound having a substituted or unsubstituted aromatic group material comprising the formula (2); A substance represented by Chemical Formula 6; It may contain two or more of the aromatic group-containing polymers selected from the above (i), (ii) and (iii). It is substantially the same as the composition of the first embodiment except that it contains two or more kinds.
- the organic film CMP slurry composition of one embodiment of the present invention comprises at least one of a polar solvent and a nonpolar solvent; And a metal oxide abrasive, and may be acidic.
- the organic film to be polished of the present invention can be polished with a high polishing amount without scratching, and the flatness of the polishing surface can be increased.
- Polar and / or non-polar solvents reduce friction when polishing high-carbon organic films with metal oxide abrasives, and can be water, for example ultrapure water, organic amines, organic alcohols, organic alcohol amines, organic ethers, organic ketones, and the like.
- ultrapure water can be used.
- Polar and / or nonpolar solvents may be included in the balance in the CMP slurry composition.
- the metal oxide abrasive can polish the organic film having a high carbon content, film density and hardness with a high polishing amount.
- the polishing surface flatness could be increased by preventing scratches and the like from occurring during polishing of the organic film, which is the polishing target of the present invention.
- the metal oxide abrasive may include one or more of silica, alumina, ceria, titania, zirconia.
- silica may have a further effect of good dispersion stability
- ceria may have a further effect of no oxidizing agent or at least extremely high polishing rate.
- the metal oxide abrasive may be spherical particles having an average particle diameter of about 10 to 150 nm, for example, about 30 to 70 nm, for example, about 30, 35, 40, 45, 50, 55, 60, 65, 70 nm, Within this range, it is possible to achieve a sufficient polishing rate with respect to the organic film to be polished of the present invention, prevent scratches from occurring, and increase flatness.
- the metal oxide abrasive is about 0.1 to 20% by weight, for example about 0.1 to 15% by weight, for example about 0.1 to 5% by weight, for example about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 in the CMP slurry composition.
- a sufficient polishing rate can be given to the organic film to be polished, a scratch can be prevented from occurring, and dispersion stability can be good.
- a sufficient polishing rate can be given to the organic film to be polished, a scratch can be prevented from occurring, and dispersion stability can be good.
- the present invention in the above range
- a sufficient polishing rate can be given to the organic film to be polished, a scratch can be prevented from occurring, and dispersion stability can be good.
- the CMP slurry composition is acidic, the CMP slurry composition has an effect of realizing a high polishing selectivity of the organic film with respect to the inorganic film, increasing the polishing amount per unit time with respect to the organic film, and increasing the flatness.
- the CMP slurry composition has a pH of about 6 or less, for example about 5 or less, for example about 1 to 5, for example about 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4, 4.1, 4.2, 4.3, Can be 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, 5.
- the CMP slurry composition of one embodiment of the present invention can be adjusted to the pH in the above-described range.
- the pH adjusting agent may include one or more of inorganic acids such as nitric acid, phosphoric acid, hydrochloric acid, and sulfuric acid, and organic acids such as organic acids having a pKa value of about 6 or less, and may include, for example, one or more of acetic acid and citric acid. It is not limited.
- the CMP slurry composition may further comprise an additive.
- the CMP slurry composition may further include a polishing accelerator as an additive.
- the polishing rate for the inorganic film can be suppressed to increase the polishing selectivity for the inorganic film.
- the abrasive promoter may comprise one or more of organic acids such as malic acid, citric acid, formic acid, glutaric acid, oxalic acid, phthalic acid, succinic acid, tartaric acid, maleic acid, malonic acid.
- the polishing accelerator may be included in about 0.02 to 0.5% by weight of the CMP slurry composition, and may have no adverse effect on the polishing rate, the dispersion stability of the slurry, and the surface properties of the organic carbon film in the above range.
- the CMP slurry composition may further comprise the pH adjuster described above to make the pH acidic.
- the pH adjusting agent may be included to adjust the pH of the whole composition in the CMP slurry composition at an appropriate line to further increase the polishing selectivity for the inorganic film.
- the organic film CMP slurry composition of another embodiment of the present invention includes a polar and / or nonpolar solvent, a metal oxide abrasive, and an oxidizing agent, and may be acidic.
- the organic film CMP slurry composition of another embodiment of the present invention further includes an oxidizing agent as compared to the composition of the embodiment of the present invention, thereby increasing the polishing selectivity of the organic film to the inorganic film, increasing the polishing rate to the organic film, and There may be further effects of increasing the flatness.
- it further comprises an oxidizing agent is substantially the same as the organic film CMP slurry composition of one embodiment of the present invention. Therefore, hereinafter, only the oxidant will be described further.
- the oxidizing agent oxidizes the surface layer of the organic film to facilitate polishing of the organic carbon film having a high carbon content, film density, and curing degree, and facilitates polishing of the organic film, and evenly polishes the surface of the organic film when the inorganic film is exposed by polishing.
- the surface roughness can be made good.
- the residue of the organic film present in the inorganic film can be easily removed to allow a more uniform polishing.
- the oxidizing agent may include at least one of a metal salt having a multivalent oxidation state and a chelate compound of a transition metal.
- Multivalent means divalent or more, for example trivalent or more, for example tetravalent or more.
- Metal salts having a polyvalent oxidation state can increase the polishing rate for the organic film and lower the polishing rate for the inorganic film.
- the metal salt may include a metal such as a transition metal, a lanthanide element, and may further include halogen, ammonium, nitrate, or the like.
- the metal salt may include ceric ammonium salt, ferric halogen salt, ferric nitrate salt, and the like, and may include, for example, ceric ammonium nitrate, ferric nitrate, ferric chloride, and the like.
- the chelating compound of the transition metal can increase the polishing rate for the organic film and lower the polishing rate for the inorganic film.
- the transition metals include conventionally known transition metals of groups 3 to 12 of the periodic table, which may be iron, copper, manganese or chromium, for example.
- Chelates are oxalic acid, amino-substituted carboxylic acids (e.g., iminodiacetic acid, ethylenediaminedisuccinic acid, iminodisuccinic acid, aminopolycarboxylates such as ethylenediaminetetraacetic acid, nitrilotriacetic acid, alpha-amino acids such as glycine, beta- Amino acids), hydroxyl-substituted carboxylic acids (eg, polycarboxylic acids including recipients such as glycolic acid, lactic acid, malic acid, citric acid, tartaric acid), phosphonocarboxylic acids, aminophosphonic acids; Combinations thereof.
- amino-substituted carboxylic acids e.g., iminodiacetic acid, ethylenediaminedisuccin
- the chelating compound of the transition metal may include, but is not limited to, one or more of Fe-containing compounds including propylenediaminetetraacetic acid-Fe and the like, Mn-containing compounds including propylenediaminetetraacetic acid-Mn and the like.
- the oxidant is about 0.001 to 15% by weight, for example about 0.01 to 5% by weight, for example about 0.05 to 3% by weight, for example about 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35 in the CMP slurry composition , 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.8, 0.85, 0.9, 0.95, 1, 1.5, 2, 2.5, 3 wt%, and the proper etching property for the organic film in the above range I can keep it.
- the stability of the oxidant may be increased to increase the polishing amount per unit time for the organic film, to improve the flatness of the polishing surface, and to increase the polishing selectivity for the inorganic film.
- the organic film polishing method of the present invention includes polishing an organic film having a high carbon content, a film density, and a high degree of curing by using an organic film CMP slurry composition, wherein the organic film CMP slurry composition comprises the organic film CMP slurry composition according to an embodiment of the present invention. It may include.
- FIG. 1A illustrates a lamination state of a silicon wafer, an inorganic film, and an organic carbon film before polishing an organic film, and the silicon wafer 100 is intaglio patterned locally.
- T represents an imaginary polishing stop line.
- a 2000 ml three-necked flask equipped with a thermometer, a condenser, a mechanical stirrer, and a dropping funnel was prepared, and then immersed in an oil bath at 140 ° C. Heating and stirring by magnets were performed on a hotplate and the cooling water temperature of the condenser was fixed at 40 ° C. 220 g of 1 mol of 1-methoxypyrene was added to the reactor, and 138 g of 1.0 mol of 1,4-bismethoxymethylbenzene was added and then dissolved in 656 g of propylene glycol monomethyl ether acetate. Then 4.6 g of 0.03 mol of diethylsulfate were added.
- the temperature of the reactor was maintained at 130 ° C.
- the molecular weight was measured at regular time intervals to determine the completion time of the reaction.
- the sample for measuring the molecular weight was prepared by diluting 1 g of the reactant, quenching to room temperature, 0.02 g of the sample was diluted to 4% by weight using tetrahydrofuran as a solvent.
- 0.03 mol of triethanolamine 4.48 g was added to the reactor as a neutralizing agent and terminated.
- the reaction was then slowly cooled to room temperature.
- the reaction was diluted with 500 g of propylene glycol monomethyl ether acetate.
- the solvent was then added to a 2000 ml separatory funnel.
- the molecular weight and the dispersity of the obtained copolymer were measured by GPC under tetrahydrofuran, and as a result, a polymer containing a unit represented by the following Chemical Formula 10 having a weight average molecular weight of 4000 dispersion of 2.3 was obtained.
- a mechanical stirrer, a cooling tube, a 2 L four-necked flask containing 30.1 g (0.1 mol) of coronene, 47.1 g (0.6 mol) of acetyl chloride, and 79.8 g (0.6 mol) of trichloroaluminum were dissolved in 1000 g of toluene.
- the reaction was terminated after stirring for 10 hours.
- 37.83 g (1.0 mol) of sodium borohydride was added to the obtained compound, and the reaction was carried out for 17 hours.
- a 5000 mm thick silica film was deposited on the pattern wafer having the negative pattern formed on the surface thereof, and an organic film of 2650 mm thick was formed to fill the negative pattern formed on the surface of the silica film.
- the organic film was prepared by applying the composition for forming an organic film of Preparation Example 1 onto a silica film and thermosetting at 400 ° C.
- the hardness was measured using a Nanoindentor (Hysitron TI750 Ubi) for the specimen of the thickness of 4700 ⁇ 4800 ⁇ prepared by coating the composition for forming an organic film of Preparation Example 1 and thermosetting at 400 °C for 120 seconds.
- the tip of the nanoindentor was measured by loading the specimen for 5 seconds, holding for 2 seconds and then unloading for 5 seconds, and the hardness was 0.9 GPa.
- the carbon content was measured using an elemental analyzer (EA1112, Thermo) on the same specimen. Specifically, the exact amount of the sample was burned in O 2 coexistence to measure the carbon content, the carbon content was 72atm%.
- Membrane density was measured on the same specimen using an X-RAY REFLECTIVITY (XRR) instrument (X'Pert PRO, PANalytical). Specifically, the diffraction pattern irradiated with X-rays was measured by comparing with a known diffraction pattern, and the film density was 1.4 g / cm 3 . The acid value was measured for the same specimen, and the acid value was 0 mg KOH / g.
- XRR X-RAY REFLECTIVITY
- a CMP slurry composition comprising ultrapure water and the components of Table 1 below was prepared and polished under the following polishing conditions.
- a 5000 mm thick silica film was deposited on the pattern wafer having the negative pattern formed on the surface thereof, and an organic film of 2650 mm thick was formed to fill the negative pattern formed on the surface of the silica film.
- the organic film was prepared by applying the composition for forming an organic film of Preparation Example 2 onto a silica film and thermosetting at 400 ° C.
- the composition for forming an organic film of Preparation Example 2 was applied and thermally cured at 400 ° C. for 120 seconds to prepare a specimen having a thickness of 4700 to 4800 mm 3.
- Hardness, carbon content, film density, and acid value were measured in the same manner as in Example 1. The hardness was 1.5 GPa, the carbon content was 80 atm%, the film density was 1.7 g / cm 3 , and the acid value was 0 mg KOH / g.
- a CMP slurry composition comprising ultrapure water and the components of Table 2 below was prepared and polished under the following polishing conditions.
- Example 1 the same procedure was followed except that the CMP slurry composition having the composition of Table 1 was used.
- Example 2 the same procedure was followed except that the CMP slurry composition having the composition of Table 2 was used.
- A Metal oxide abrasive: (a1) Ceria (SOLVAY company) with an average particle diameter of 60 nm, (a2) Colloidal silica (Evonic company) with an average particle diameter of 35 nm
- pH regulator potassium hydroxide (Samjeon Pure Chemical Co., Ltd.)
- polishing accelerator Formic acid (Daejunghwa Gold Co., Ltd.)
- polishing pad flatness is to evaluate whether the CMP slurry composition has balanced the polishing on the organic film compared to the inorganic film, and after performing the polishing as described above, a thin film thickness meter (ST4000, K-MAC) is applied to the polishing surface. It is a value obtained by measuring the thickness (unit: mm) of the polishing film, and calculating the standard deviation from the measured thickness.
- the organic film CMP slurry composition of the present invention has a high polishing amount per unit time and a high polishing surface flatness for the organic film having a high carbon content, film density, and hardness.
- Examples 2 to 18 further include a specific oxidizing agent as compared to Example 1, thereby confirming that the polishing rate is higher or the polishing surface flatness is higher for the organic film having a higher carbon content, film density, and hardness.
- the present invention provides an organic film CMP slurry composition having excellent polishing effect on an organic film having high carbon content, film density, and hardness.
- the present invention provides a more uniform surface after polishing for organic films having high carbon content, film density, and hardness, and can more easily remove residues of organic film materials present in the polishing stop film layer.
- An organic film CMP slurry composition capable of polishing was provided.
- the comparative example having a non-acidic pH even when the metal oxide abrasive was included it was confirmed that the polishing rate of the organic film having a high carbon content, film density and hardness is significantly lower than the embodiment, or the polishing surface flatness is lower .
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Abstract
Description
실시예 | 비교예 | ||||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 1 | 2 | 3 | ||
(A)연마제 | (a1) | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 |
(B)산화제 | (b1) | - | 0.4 | 0.4 | 2.5 | 0.05 | 2.5 | - | - | - | - | - | 0.4 |
(b2) | - | - | - | - | - | - | 0.4 | 2.5 | 0.05 | - | - | - | |
(b3) | - | - | - | - | - | - | - | - | - | 3 | - | - | |
(b4) | - | - | - | - | - | - | - | - | - | - | 0.5 | - | |
(C)pH 조절제 | - | - | - | - | - | - | - | - | - | - | - | 0.3 | |
슬러리 pH값 | 4.5 | 1.8 | 1.9 | 1.3 | 1.9 | 1.4 | 2.1 | 1.4 | 2.6 | 8.2 | 10.3 | 7 | |
유기막 연마량(Å/min) | 1000 | 1600 | 2000 | 1400 | 1500 | 1100 | 1900 | 1300 | 1400 | 42 | 100 | 30 | |
연마면 평탄도 | 23 | 12 | 11 | 10 | 15 | 12 | 16 | 12 | 14 | 90 | 140 | 80 |
실시예 | 비교예 | ||||||||||||
10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 4 | 5 | 6 | ||
(A)연마제 | (a2) | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
(B)산화제 | (b1) | 0.4 | 0.4 | 2.5 | 0.05 | 2.5 | - | - | - | 0.4 | - | - | 0.4 |
(b2) | - | - | - | - | - | 0.4 | 2.5 | 0.05 | - | - | - | - | |
(b3) | - | - | - | - | - | - | - | - | - | 3 | - | - | |
(b4) | - | - | - | - | - | - | - | - | - | - | 0.5 | - | |
(C)pH 조절제 | - | - | - | - | - | - | - | - | - | - | - | 0.3 | |
(D)연마 촉진제 | - | - | - | - | - | - | - | - | 0.4 | - | - | - | |
슬러리 pH값 | 1.7 | 1.7 | 1.2 | 2.0 | 1.2 | 2.2 | 1.3 | 2.5 | 1.8 | 8 | 10 | 8 | |
유기막 연마량(Å/min) | 1500 | 1900 | 1300 | 1200 | 1000 | 1800 | 1100 | 1200 | 2500 | 10 | 10 | 5 | |
연마면 평탄도 | 10 | 7 | 6 | 2 | 8 | 5 | 3 | 2 | 1 | 70 | 90 | 60 |
Claims (21)
- 극성 용매, 비극성 용매 중 하나 이상; 및 금속산화물 연마제를 포함하고, 산성이고, 탄소 함량이 약 50 내지 95atom%인 유기막을 연마하기 위한 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 유기막은 막 밀도가 약 0.5 내지 2.5g/cm3이고 경도(hardness)가 약 0.4GPa 이상인 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 유기막은 막 밀도가 약 1.0 내지 2.0g/cm3이고 경도가 약 1.0GPa 이상인 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 금속산화물 연마제는 실리카, 알루미나, 세리아, 티타니아, 지르코니아 중 하나 이상을 포함하는 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 금속산화물 연마제는 상기 조성물 중 약 0.1 내지 20중량%로 포함되는 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 산성은 pH 약 6 이하인 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 산성은 pH 약 5 이하인 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 다가의 산화상태를 갖는 금속염, 전이금속의 킬레이트 중 하나 이상의 산화제를 더 포함하는 유기막 CMP 슬러리 조성물.
- 제8항에 있어서, 상기 산화제는 상기 조성물 중 약 0.001 내지 15중량%로 포함되는 유기막 CMP 슬러리 조성물.
- 제8항에 있어서, 상기 산화제는 상기 조성물 중 약 0.01 내지 5중량%로 포함되는 유기막 CMP 슬러리 조성물.
- 제8항에 있어서, 상기 다가의 산화상태를 갖는 금속염은 세릭 암모늄염, 페릭 니트레이트, 페릭 클로라이드 중 하나 이상을 포함하는 유기막 CMP 슬러리 조성물.
- 제8항에 있어서, 상기 전이금속의 킬레이트는 프로필렌디아민테트라아세트산-Fe 등의 Fe화합물 또는 프로필렌디아민테트라아세트산-Mn 등 Mn 화합물 중 하나 이상을 포함하는 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 조성물은 pH 조절제를 더 포함하는 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 조성물은 말산, 시트르산, 포름산, 글루타르산, 옥살산, 프탈산, 숙신산, 타르타르산, 말레산, 말론산 중 하나 이상의 연마촉진제를 더 포함하는 유기막 CMP 슬러리 조성물.
- 제1항에 있어서, 상기 유기막은 치환 또는 비치환된 방향족기를 갖는 화합물을 포함하는 유기막 형성용 조성물로 형성된 유기막 CMP 슬러리 조성물.
- 제15항에 있어서, 상기 치환된 방향족기를 갖는 화합물은 하기 화학식 A로 표시되는 작용기, 하기 화학식 B로 표시되는 작용기 중 하나 이상으로 치환된 것인 유기막 CMP 슬러리 조성물:<화학식 A>*-(O)n-(CH2)m-P(=O)(R)(R')<화학식 B>*-B(R)(R')(상기 화학식 A, 화학식 B에서, n은 0 또는 1이고, m은 0 내지 10의 정수이고,R, R'은 각각 독립적으로, 수소, 수산기, 치환 또는 비치환된 C1 내지 C20의 알킬기, 치환 또는 비치환된 C2 내지 C20의 알케닐기, 치환 또는 비치환된 C3 내지 C20의 시클로알킬기, 치환 또는 비치환된 C1 기지 C20의 할로알킬기, 치환 또는 비치환된 C1 내지 C20의 알킬술포네이트기, 치환 또는 비치환된 C1 내지 C20의 알킬술포닐기, 치환 또는 비치환된 C2 내지 C20의 알킬아미드기, 치환 또는 비치환된 C3 내지 C20의 알킬에스테르기, 치환 또는 비치환된 C2 내지 C20의 시아노알킬기, 치환 또는 비치환된 C1 내지 C20의 알콕시기, 치환 또는 비치환된 C6 내지 C30 아릴기, 치환 또는 비치환된 C6 내지 C30 아릴알킬기, 치환 또는 비치환된 C6 내지 C30 아릴옥시기이거나, 또는R, R'은 서로 연결되어 치환 또는 비치환된 C3 내지 C20의 시클로알킬기 또는 치환 또는 비치환된 C3 내지 C20의 헤테로시클로알킬기를 형성한다).
- 제1항에 있어서, 상기 유기막은 하기 화학식 2를 포함하는 물질을 포함하는 유기막 형성용 조성물로 형성되는 유기막 CMP 슬러리 조성물:<화학식 2>(상기 화학식 2에서, n은 1≤n<190이고,R1은 수소, 히드록시기, 할로겐 원자, 알릴기, 티오닐기, 티올기, 시아노기, 치환 또는 비치환된 아미노기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 치환 또는 비치환된 C7 내지 C30 아릴알킬기, 치환 또는 비치환된 C1 내지 C20 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알케닐기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴알킬기, 치환 또는 비치환된 C1 내지 C20 알킬아민기, 치환 또는 비치환된 C1 내지 C30 알콕시기, 치환 또는 비치환된 C1 내지 C30 헤테로알콕시기, 치환 또는 비치환된 C6 내지 C30 아릴옥시기, 치환 또는 비치환된 C1 내지 C20 알데히드기, 치환 또는 비치환된 C1 내지 C40 알킬에테르기, 치환 또는 비치환된 C7 내지 C20 아릴알킬렌에테르기, 치환 또는 비치환된 C1 내지 C30 할로알킬기, P를 포함하는 작용기, B를 포함하는 작용기 또는 이들의 조합이고,R2는 수소, 아미노기, 치환 또는 비치환된 C1 내지 C10의 알콕시기, 치환 또는 비치환된 C6 내지 C10의 아릴옥시기, 디알킬아미노기(-NRR', 여기서 R, R'은 서로 독립적으로 치환 또는 비치환된 C1 내지 C10의 알킬기 또는 치환 또는 비치환된 C6 내지 C10의 아릴기), 히드록시기, 할로겐 원자, 알릴기, 티오닐기, 티올기, 시아노기, 치환 또는 비치환된 아미노기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 치환 또는 비치환된 C7 내지 C30 아릴알킬기, 치환 또는 비치환된 C1 내지 C20 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알케닐기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴알킬기, 치환 또는 비치환된 C1 내지 C20 알킬아민기, 치환 또는 비치환된 C1 내지 C30 알콕시기, 치환 또는 비치환된 C1 내지 C30 헤테로알콕시기, 치환 또는 비치환된 C6 내지 C30 아릴옥시기, 치환 또는 비치환된 C1 내지 C20 알데히드기, 치환 또는 비치환된 C1 내지 C40 알킬에테르기, 치환 또는 비치환된 C7 내지 C20 아릴알킬렌에테르기, 치환 또는 비치환된 C1 내지 C30 할로알킬기, P를 포함하는 작용기, B를 포함하는 작용기 또는 이들의 조합이고,R3은 치환 또는 비치환된,중 어느 하나이다).
- 제1항에 있어서, 상기 유기막은 하기 화학식 6으로 표시되는 물질을 포함하는 유기막 형성용 조성물로 형성되는 유기막 CMP 슬러리 조성물:<화학식 6>(상기 화학식 6에서, R4 내지 R9, X1 내지 X6은 각각 독립적으로, 수소, 히드록시기, 할로겐 원자, 알릴기, 티오닐기, 티올기, 시아노기, 치환 또는 비치환된 아미노기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 치환 또는 비치환된 C7 내지 C30 아릴알킬기, 치환 또는 비치환된 C1 내지 C20 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알케닐기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴알킬기, 치환 또는 비치환된 C1 내지 C20 알킬아민기, 치환 또는 비치환된 C1 내지 C30 알콕시기, 치환 또는 비치환된 C1 내지 C30 헤테로알콕시기, 치환 또는 비치환된 C6 내지 C30 아릴옥시기, 치환 또는 비치환된 C1 내지 C20 알데히드기, 치환 또는 비치환된 C1 내지 C40 알킬에테르기, 치환 또는 비치환된 C7 내지 C20 아릴알킬렌에테르기, 치환 또는 비치환된 C1 내지 C30 할로알킬기, P를 포함하는 작용기, B를 포함하는 작용기 또는 이들의 조합이고,n1 내지 n6은 각각 독립적으로 0 내지 2의 범위에 있고, 2≤ n1+n2+n3+n4+n5+n6≤6이다).
- 제1항에 있어서, 상기 유기막은 하기 (i), (ii), (iii) 중에서 선택되는 방향족기 함유 중합체를 포함하는 유기막 형성용 조성물로 형성되는 유기막 CMP 슬러리 조성물:(i) 하기 화학식 7로 표시되는 화합물,(ii) 하기 화학식 7로 표시되는 화합물과 하기 화학식 8로 표시되는 화합물과의 혼합물,(iii) 하기 화학식 9로 표시되는 화합물<화학식 7><화학식 8><화학식 9>(상기 화학식 7 내지 9에서, m, n은 각각 1≤n<750, 1≤m<750, 2≤m+n<1500이고,R10은 치환 또는 비치환된,중 어느 하나이고R11은 수소, 히드록시기, 할로겐 원자, 티오닐기, 티올기, 시아노기, 치환 또는 비치환된 아미노기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 치환 또는 비치환된 C7 내지 C30 아릴알킬기, 치환 또는 비치환된 C1 내지 C20 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알케닐기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴알킬기, 치환 또는 비치환된 C1 내지 C20 알킬아민기, 치환 또는 비치환된 C1 내지 C30 알콕시기, 치환 또는 비치환된 C6 내지 C30 아릴옥시기, 치환 또는 비치환된 C1 내지 C20 알데히드기, 치환 또는 비치환된 C1 내지 C40 알킬에테르기, 치환 또는 비치환된 C7 내지 C20 아릴알킬렌에테르기, 치환 또는 비치환된 C1 내지 C30 할로알킬기, P를 포함하는 작용기, B를 포함하는 작용기 또는 이들의 조합이고,R12는 치환 또는 비치환된,중 어느 하나이고,R13은 치환 또는 비치환된,중 어느 하나이고,R14은 치환 또는 비치환된,중 어느 하나이고,R15는 치환 또는 비치환된,중 어느 하나이고,R10, R13, R15에서 R은 각각 독립적으로 수소, 히드록시기, 할로겐 원자, 티오닐기, 티올기, 시아노기, 치환 또는 비치환된 아미노기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C1 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 치환 또는 비치환된 C7 내지 C30 아릴알킬기, 치환 또는 비치환된 C1 내지 C20 헤테로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알킬기, 치환 또는 비치환된 C2 내지 C30 헤테로사이클로알케닐기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴기, 치환 또는 비치환된 C2 내지 C30 헤테로아릴알킬기, 치환 또는 비치환된 C1 내지 C20 알킬아민기, 치환 또는 비치환된 C1 내지 C30 알콕시기, 치환 또는 비치환된 C6 내지 C30 아릴옥시기, 치환 또는 비치환된 C1 내지 C20 알데히드기, 치환 또는 비치환된 C1 내지 C40 알킬에테르기, 치환 또는 비치환된 C7 내지 C20 아릴알킬렌에테르기, 치환 또는 비치환된 C1 내지 C30 할로알킬기, P를 포함하는 작용기, B를 포함하는 작용기 또는 이들의 조합이다.
- 제1항에 있어서, 상기 유기막은 산가가 약 0mgKOH/g인 유기막 CMP 슬러리 조성물.
- 제1항 내지 제20항 중 어느 한 항의 유기막 CMP 슬러리 조성물을 사용하여, 탄소 함량이 약 50 내지 95atm%이고 막 밀도가 약 0.5 내지 2.5g/cm3이고 경도가 약 0.4GPa 이상인 유기막을 연마하는 단계를 포함하는 유기막 연마방법.
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US14/785,014 US20160068711A1 (en) | 2013-04-17 | 2014-04-17 | Organic Film CMP Slurry Composition and Polishing Method Using Same |
CN201480021926.7A CN105143390B (zh) | 2013-04-17 | 2014-04-17 | 有机膜化学机械研磨浆料组成物及使用其的研磨方法 |
US16/100,561 US10723916B2 (en) | 2013-04-17 | 2018-08-10 | Organic film CMP slurry composition and polishing method using same |
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KR1020140045953A KR101659144B1 (ko) | 2013-04-17 | 2014-04-17 | 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
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US16/100,561 Division US10723916B2 (en) | 2013-04-17 | 2018-08-10 | Organic film CMP slurry composition and polishing method using same |
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US10723916B2 (en) | 2013-04-17 | 2020-07-28 | Samsung Sdi Co., Ltd. | Organic film CMP slurry composition and polishing method using same |
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