US20070020167A1 - Method of preparing catalyst for manufacturing carbon nanotubes - Google Patents

Method of preparing catalyst for manufacturing carbon nanotubes Download PDF

Info

Publication number
US20070020167A1
US20070020167A1 US11/158,047 US15804705A US2007020167A1 US 20070020167 A1 US20070020167 A1 US 20070020167A1 US 15804705 A US15804705 A US 15804705A US 2007020167 A1 US2007020167 A1 US 2007020167A1
Authority
US
United States
Prior art keywords
catalytic metal
metal precursor
precursor solution
substrate
catalyst particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/158,047
Inventor
In-taek Han
Ha-Jin Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Assigned to SAMSUNG SDI CO., LTD., A CORPORATION ORGANIZED UNDER THE LAWS OF THE REPUBLIC OF KOREA reassignment SAMSUNG SDI CO., LTD., A CORPORATION ORGANIZED UNDER THE LAWS OF THE REPUBLIC OF KOREA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAN, IN-TAEK, KIM, HA-JIN
Publication of US20070020167A1 publication Critical patent/US20070020167A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
    • D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
    • D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a method of preparing a catalyst for manufacturing carbon nanotubes and a method of manufacturing carbon nanotubes using the same.
  • a carbon nanotube has a cylindrical structure having a diameter of several nano-meter and a very large aspect ratio of about 10 to 1,000.
  • carbon atoms are generally arranged in a hexagonal honeycomb pattern.
  • One carbon atom bonds to three adjacent carbon atoms.
  • the carbon nanotube may be a conductor or a semiconductor according to its structure.
  • As a conductor the carbon nanotube has high electroconductivity.
  • the carbon nanotube has superior mechanical strength, Young's modulus of tera level, and high heat conductivity.
  • the carbon nanotube having these properties can be advantageously used in various technical fields, such as an emitter of FED, a cathode material for a secondary battery, a catalyst support of a fuel cell, a high strength composite, and the like.
  • Examples of a method of preparing the carbon nanotube include arc discharge, laser deposition, plasma enhanced chemical vapor deposition (PECVD), chemical vapor deposition, vapor phase growth, electrolysis, and the like.
  • the vapor phase growth is suitable for preparing the carbon nanotube in bulk form since it synthesizes the carbon nanotube in a vapor phase by directly supplying a reaction gas and a catalytic metal into a reactor without using a substrate.
  • the arc discharge and the laser deposition have relatively low yields of carbon nanotubes. When using the arc discharge and the laser deposition, It is difficult to control the diameter and the length of the carbon nanotube. Further, in the arc discharge and the laser deposition, clusters of amorphous carbon besides the carbon nanotubes are produced in a large amount, and thus a complicated purifying process must be performed.
  • Chemical vapor deposition (CVD) methods such as thermal chemical vapor deposition, low pressure chemical vapor deposition and PECVD are generally used to form carbon nanotubes on a substrate.
  • the carbon nanotubes can be synthesized at low temperatures by activating gas with a plasma.
  • it is relatively easy to control the diameter, the length, the density, etc. of the carbon nanotube.
  • catalyst particles on which carbon nanotubes grow based, are first dispersed on a substrate in order to obtain a uniform density of the carbon nanotubes formed on the substrate.
  • Korean Patent Laid-Open Publication No. 2001-0049398 discloses a method of forming a plurality of catalyst particles by forming a catalytic metal film on a substrate and etching the catalytic metal film with an etching gas.
  • the uniformity of the catalyst particles formed on the substrate can be evaluated by measuring the uniformity of the particle sizes of the catalyst particles and the uniformity of the production density of the catalyst particles.
  • the uniformity of the catalyst particles formed by the conventional methods is not sufficient.
  • a novel method of forming catalyst particles in order to improve the uniformity of the catalyst particles formed on a substrate is needed.
  • a method of forming catalyst particles including: applying a catalytic metal precursor solution to a substrate, the catalytic metal precursor solution comprising a catalytic metal precursor and a solvent; freeze-drying the catalytic metal precursor solution applied to the substrate; and reducing the freeze-dried catalytic metal precursor to a catalytic metal.
  • the catalytic metal precursor solution is freeze-dried by cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution and evaporating the solvent in the catalytic metal precursor solution under a reduced pressure.
  • the method of forming catalyst particles can minimize the agglomeration and/or recrystallization of the catalytic metal particles when forming the catalytic metal particles by freeze-drying the catalytic metal precursor solution. Therefore, the catalytic metal particles formed by the method of the present invention have particle sizes with very high uniformity and are very uniformly distributed on the substrate.
  • a method of manufacturing carbon nanotubes including: forming catalyst particles, on which carbon nanotubes grow based, on a substrate by applying a catalytic metal precursor solution to the substrate, freeze-drying the catalytic metal precursor solution applied to the substrate, and reducing the freeze-dried catalytic metal precursor to a catalytic metal; and growing carbon nanotubes on the catalyst particles by supplying a carbon source to the catalyst particles.
  • a method of manufacturing carbon nanotubes including: applying a catalytic metal precursor solution to the substrate; cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution; evaporating the solvent in the catalytic metal precursor solution under a reduced pressure to form catalytic metal precursor particles; converting the catalytic metal precursor particles to a catalyst particles; and growing carbon nanotubes on the catalyst particles.
  • the catalytic metal precursor particles is converted into the catalyst particles by heating the catalytic metal precursor particles in an oxidation atmosphere to oxidize the catalytic metal precursor particles and reducing the oxidized catalytic metal precursor particles to the catalyst particles by heat-treatment or plasma-treatment.
  • FIG. 1 is an optical microscopic image illustrating catalyst particles for manufacturing carbon nanotubes, prepared according to an Example of the present invention
  • FIG. 2 is an electron microscopic image illustrating a side view of carbon nanotubes prepared according to an Example of the present invention
  • FIG. 3 is an electron microscopic image illustrating a top view of carbon nanotubes prepared according to an Example of the present invention
  • FIG. 4 is an optical microscopic image illustrating catalyst particles for manufacturing carbon nanotubes, prepared according to a Comparative Example
  • FIG. 5 is an enlarged view of a part of FIG. 4 ;
  • FIG. 6 is an electron microscopic image illustrating a state of carbon nanotubes prepared according to a Comparative Example.
  • the method of forming catalyst particles includes: applying a catalytic metal precursor solution to a substrate; freeze-drying the catalytic metal precursor solution applied to the substrate; and reducing the freeze-dried catalytic metal precursor to catalytic metal.
  • the catalytic metal precursor solution includes a catalytic metal precursor and a solvent for dissolving the catalytic metal precursor.
  • the catalytic metal precursor may be any material that can be converted to metal particles, on which carbon nanotubes can grow based.
  • An example of the catalytic metal precursor includes an organo-metallic compound.
  • the organo-metallic compound can contain at least one metal element selected from the group consisting of Fe, Co, Ni, Y, Mo, Cu, Pt, V, and Ti.
  • Examples of the organo-metallic compound include iron acetate, iron oxalate, cobalt acetate, nickel acetate, ferrocene, or a mixture thereof.
  • the solvent may be any liquid material that can dissolve the catalytic metal precursor.
  • examples of the solvent include ethanol, ethylene glycol, polyethylene glycol, polyvinyl alcohol, and a mixture thereof.
  • the concentration of the catalytic metal precursor in the catalytic metal precursor solution is not particularly limited. If the concentration of the catalytic metal precursor in the catalytic metal precursor solution is too low, the carbon nanotubes may not be generated in a subsequent process of manufacturing. If the concentration of the catalytic metal precursor in the catalytic metal precursor solution is too high, the diameter of the carbon nanotubes generated in a subsequent process of manufacturing may be increased or the crystallinity of the carbon nanotubes generated or carbon nanofibers may be reduced.
  • the concentration of the catalytic metal precursor in the catalytic metal precursor solution can preferably be about 10 mM to 200 mM.
  • the substrate may be composed of any material, to which catalyst particles can be attached, for example, a metal with a high melting point, such as Mo, Cr, and W, silicon, glass, plastic, quartz, and the like.
  • a metal with a high melting point such as Mo, Cr, and W
  • silicon glass, plastic, quartz, and the like.
  • the method of applying the catalytic metal precursor solution to the substrate may be any method capable of uniformly coating the solution on the surface of the substrate. Examples of the method include dip coating, evaporation coating, screen printing, spin coating, and the like. These methods can also be used in a combination.
  • the catalytic metal precursor solution can be applied to the entire surface of the substrate or on only a part of the surface of the substrate.
  • the catalytic metal precursor solution applied to the substrate is freeze-dried.
  • the freeze-drying process includes cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution and evaporating the solvent in the catalytic metal precursor solution under a reduced pressure.
  • the freezing point of the catalytic metal precursor solution may vary depending on a composition of the catalytic metal precursor solution. That is, the freezing point of the catalytic metal precursor solution can be determined by the type of the catalytic metal precursor, the type of the solvent, the concentration of the catalytic metal precursor, and the like. The freezing point of the catalytic metal precursor solution can be easily determined by those skilled in the art through thermodynamical calculation and the method of trial and error. The freezing point of the catalytic metal precursor solution can also be selected by adjusting the composition of the catalytic metal precursor solution.
  • the process of cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalyst solution can be performed using a cooling method suitable for the freezing point of the catalytic metal precursor solution.
  • a cooling method suitable for the freezing point of the catalytic metal precursor solution for example, a freezer, liquid nitrogen, etc. can be used.
  • liquid nitrogen the catalytic metal precursor solution applied to the substrate can be cooled to below the freezing point of the catalytic metal precursor solution by dipping the substrate with the catalytic metal precursor solution applied thereto in liquid nitrogen.
  • the substrate is subjected to a reduced pressure in order to allow the solvent in the frozen catalytic metal precursor solution to evaporate.
  • the substrate with the frozen catalytic metal precursor solution applied thereto is placed in a vacuum chamber, and then the pressure of the inside of the vacuum chamber is reduced.
  • the reduced pressure should be sufficient to allow the solvent in the frozen catalytic metal precursor solution to evaporate.
  • the reduced pressure sufficient to allow the solvent in the frozen catalytic metal precursor solution to evaporate is abbreviated to “evaporation pressure”.
  • the evaporation pressure can vary depending on a composition the used catalytic metal precursor solution. That is, the evaporation pressure can be determined by the type of the catalytic metal precursor, the type of the solvent, the concentration of the catalytic metal precursor, freezing point, and the like.
  • the evaporation pressure of the catalytic metal precursor solution can be easily determined by those skilled in the art through thermodynamical calculation and the method of trial and error.
  • the evaporation pressure of the catalytic metal precursor solution can also be selected by adjusting the composition of the catalytic metal precursor solution, freezing point, and the like.
  • the solvent in the frozen catalytic metal precursor solution is removed through the evaporation.
  • catalytic metal precursor components are formed in a particle form on the substrate. It is noted that the catalytic metal precursor particles formed according to the present method have particle size with high uniformity and a uniform distribution on the substrate.
  • the catalytic metal precursor particles formed on the substrate are reduced to catalytic metal particles.
  • the process of reducing the catalytic metal precursor particles to catalytic metal particles can be performed, for example, as follows. First, the catalytic metal precursor is converted into an oxide through heat-treatment in an oxidation atmosphere, and then the oxide is heat-treated or plasma treated in a reduction atmosphere to be reduced to a metal.
  • the process of reducing the catalytic metal precursor can be performed by various methods known in the art, and thus, the detailed description thereof will be omitted herein.
  • FIG. 1 is an electron microscopic image of catalytic metal particles prepared according to an Example of the present invention. Referring to FIG. 1 , the catalytic metal particles are uniformly distributed on the substrate and the particle sizes thereof are relatively uniform.
  • the method of manufacturing carbon nanotubes includes forming catalyst particles, on which carbon nanotubes grow based, on a substrate by applying a catalytic metal precursor solution to the substrate, freeze-drying the catalytic metal precursor solution applied to the substrate, and reducing the freeze-dried catalytic metal precursor to catalytic metal; and growing carbon nanotubes on the catalyst particles by supplying a carbon source to the catalyst particles.
  • the process of forming catalyst particles on the substrate is performed in the same manner as described in the method of forming catalyst particles.
  • the process of growing carbon nanotubes on the catalyst particles by supplying the carbon source to the catalyst particles may be performed by various methods useful for the manufacture of carbon nanotubes.
  • the process of growing carbon nanotubes on the catalyst particles includes placing the substrate on which the catalyst particles are formed in a reaction chamber, supplying carbon precursor gas into the reaction chamber, and decomposing the carbon precursor gas in the reaction chamber to supply carbon to the catalyst particles.
  • the process of growing the carbon nanotubes can be performed by low pressure chemical vapor deposition, thermal chemical vapor deposition, PECVD, or a combination thereof.
  • Examples of the carbon precursor gas include carbon containing compounds such as acetylene, methane, propane, ethylene, carbon monoxide, carbon dioxide, alcohol, and benzene.
  • the internal temperature of the reaction chamber may preferably be in the range of about 450 to 1100° C.
  • carbon nanotubes grow based on catalyst particles that have a uniform particle size and are uniformly distributed on the substrate, the uniformity of the resulting carbon nanotubes is also highly improved.
  • the uniformity of carbon nanotubes is evaluated by the uniformity of the lengths and diameters of the carbon nanotubes.
  • the lengths and diameters of carbon nanotubes can be measured by an electron microscope and a transmittance electron microscope, respectively.
  • FIG. 2 is an image showing a side view of carbon nanotubes prepared in an Example of the present invention. Referring to FIG. 2 , the carbon nanotubes prepared according to the method of the present embodiment are vertically oriented without being entangled with one another.
  • FIG. 3 is an image showing a top view of carbon nanotubes prepared in an Example of the present invention. Referring to FIG. 3 , the production density of carbon nanotubes prepared according to the method of the present embodiment is uniform.
  • a 40 mM iron acetate solution was prepared using ethanol and ethylene glycol as a solvent. 20 mL of ethanol and 20 mL of ethylene glycol were added to 0.1 g of iron acetate powder to obtain a solution having a proper viscosity. A silicon substrate with a diameter of 20.32 cm was dipped in the obtained solution. The coated substrate was cooled immediately with liquid nitrogen and then transferred into a vacuum chamber. Then, a vacuum less than 0.1 mmHg was applied to the chamber in order to evaporate the solvent. To minimize an amount of the remained solvent, the substrate was further heated at 100° C.
  • the freeze-dried substrate was heat-treated at 300° C. for 10 minutes in order to oxidize the iron acetate. Then, the substrate was subjected to a reduction treatment with hydrogen at 600° C.
  • FIG. 1 is an electron microscopic image of iron particles formed on the silicon substrate according to the present Example. Referring to FIG. 1 , the iron particles are uniformly distributed on the substrate and the particle sizes thereof are relatively uniform.
  • the substrate having iron particles formed thereon was placed in a reaction chamber for chemical vapor deposition (CVD), an internal temperature of which is 600° C., and then a mixed gas of carbon monoxide and hydrogen (weight ratio 1:2) was supplied to the reaction chamber for 20 minutes to synthesize carbon nanotubes based on the iron particles.
  • CVD chemical vapor deposition
  • FIG. 2 is an image showing a side view of carbon nanotubes prepared in the present Example. As is apparent from FIG. 2 , the carbon nanotubes prepared in the present Example are vertically oriented without being entangled with one another.
  • FIG. 3 is an image showing a top view of carbon nanotubes prepared in the present Example. It can be seen from FIG. 3 that the production density of carbon nanotubes prepared in the present Example is uniform.
  • Carbon nanotubes were synthesized in the same manner as in the above Example, except that the iron acetate solution applied to the substrate was not freeze-dried but naturally dried.
  • FIG. 4 is an optical microscopic image showing iron particles prepared in Comparative Example.
  • FIG. 5 is an enlarged view of a part of FIG. 4 . As seen from FIGS. 4 and 5 , iron particles prepared in Comparative Example have no uniformity.
  • FIG. 6 is an electron microscopic image showing a form of carbon nanotube clusters synthesized in Comparative Example. Referring to FIG. 6 , the carbon nanotubes synthesized in Comparative Example are partially lumped on the substrate, are entangled with one another, and not vertically oriented.
  • the method of forming catalyst particles according to an embodiment of the present invention can minimize the agglomeration and/or recrystallization of the catalyst particles when forming the catalyst particles by freeze-drying the catalyst metal precursor solution.
  • the catalyst particles formed by the method of the present embodiment have a very uniform particle size and a very uniform distribution on the substrate.
  • the carbon nanotubes grow based on the catalyst particles having a uniform particle size and a uniform distribution on the substrate, and thus, the synthesized carbon nanotubes have highly improved uniformity.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Textile Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)

Abstract

A novel method of forming catalyst particles, on which carbon nanotubes grow based, on a substrate with increased uniformity, and a method of synthesizing carbon nanotubes having improved uniformity are provided. A catalytic metal precursor solution is applied to a substrate. The applied catalytic metal precursor solution is freeze-dried, and then reduced to catalytic metal. The method of forming catalyst particles can minimize agglomeration and/or recrystallization of catalyst particles when forming the catalyst particles by freeze-drying the catalyst metal precursor solution. The catalyst particles formed by the method has a very uniform particle size and are very uniformly distributed on the substrate.

Description

    CLAIM OF PRIORITY
  • This application claims the priority of Korean Patent Application No. 10-2004-0046552, filed on Jun. 22, 2004, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a method of preparing a catalyst for manufacturing carbon nanotubes and a method of manufacturing carbon nanotubes using the same.
  • 2. Description of the Related Art
  • A carbon nanotube has a cylindrical structure having a diameter of several nano-meter and a very large aspect ratio of about 10 to 1,000. In the carbon nanotube, carbon atoms are generally arranged in a hexagonal honeycomb pattern. One carbon atom bonds to three adjacent carbon atoms. The carbon nanotube may be a conductor or a semiconductor according to its structure. As a conductor, the carbon nanotube has high electroconductivity. Also, the carbon nanotube has superior mechanical strength, Young's modulus of tera level, and high heat conductivity. The carbon nanotube having these properties can be advantageously used in various technical fields, such as an emitter of FED, a cathode material for a secondary battery, a catalyst support of a fuel cell, a high strength composite, and the like.
  • Examples of a method of preparing the carbon nanotube include arc discharge, laser deposition, plasma enhanced chemical vapor deposition (PECVD), chemical vapor deposition, vapor phase growth, electrolysis, and the like. The vapor phase growth is suitable for preparing the carbon nanotube in bulk form since it synthesizes the carbon nanotube in a vapor phase by directly supplying a reaction gas and a catalytic metal into a reactor without using a substrate. The arc discharge and the laser deposition have relatively low yields of carbon nanotubes. When using the arc discharge and the laser deposition, It is difficult to control the diameter and the length of the carbon nanotube. Further, in the arc discharge and the laser deposition, clusters of amorphous carbon besides the carbon nanotubes are produced in a large amount, and thus a complicated purifying process must be performed.
  • Chemical vapor deposition (CVD) methods, such as thermal chemical vapor deposition, low pressure chemical vapor deposition and PECVD are generally used to form carbon nanotubes on a substrate. In the PECVD, the carbon nanotubes can be synthesized at low temperatures by activating gas with a plasma. In the PECVD, it is relatively easy to control the diameter, the length, the density, etc. of the carbon nanotube.
  • In the case of chemical vapor deposition (CVD) methods, catalyst particles, on which carbon nanotubes grow based, are first dispersed on a substrate in order to obtain a uniform density of the carbon nanotubes formed on the substrate.
  • For example, Korean Patent Laid-Open Publication No. 2001-0049398 discloses a method of forming a plurality of catalyst particles by forming a catalytic metal film on a substrate and etching the catalytic metal film with an etching gas.
  • In addition, Chemical Physics Letter, vol. 377 p. 49, 2003 discloses a method of forming catalyst particles on a substrate by applying a catalytic metal precursor solution to the substrate, and then drying and heat-treating the applied catalytic metal precursor solution. However, in this case, recrystallization and agglomeration of the catalytic metals occur during the drying and heat-treatment processes so that uniformity of the catalyst particles formed on the substrate is deteriorated. Due to the deterioration in the uniformity of the catalyst particles formed on the substrate, the uniformity of the diameter and production density of the carbon nanotubes grown on the basis of the catalytic particles are both deteriorated.
  • The uniformity of the catalyst particles formed on the substrate can be evaluated by measuring the uniformity of the particle sizes of the catalyst particles and the uniformity of the production density of the catalyst particles. The uniformity of the catalyst particles formed by the conventional methods is not sufficient. Thus, a novel method of forming catalyst particles in order to improve the uniformity of the catalyst particles formed on a substrate is needed.
    • SUMMARY OF THE INVENTION
  • It is therefore an object of the present invention to provide a novel method of forming catalyst particles.
  • It is a further object of the present invention to provide a novel method of forming catalyst particles with increased uniformity, on which carbon nanotubes grow based, on a substrate.
  • It is also an object of the present invention to provide a method of synthesizing carbon nanotubes with improved uniformity.
  • According to an aspect of the present invention, there is provided a method of forming catalyst particles, the method including: applying a catalytic metal precursor solution to a substrate, the catalytic metal precursor solution comprising a catalytic metal precursor and a solvent; freeze-drying the catalytic metal precursor solution applied to the substrate; and reducing the freeze-dried catalytic metal precursor to a catalytic metal.
  • It is preferred that the catalytic metal precursor solution is freeze-dried by cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution and evaporating the solvent in the catalytic metal precursor solution under a reduced pressure.
  • The method of forming catalyst particles can minimize the agglomeration and/or recrystallization of the catalytic metal particles when forming the catalytic metal particles by freeze-drying the catalytic metal precursor solution. Therefore, the catalytic metal particles formed by the method of the present invention have particle sizes with very high uniformity and are very uniformly distributed on the substrate.
  • According to another aspect of the present invention, there is provided a method of manufacturing carbon nanotubes, the method including: forming catalyst particles, on which carbon nanotubes grow based, on a substrate by applying a catalytic metal precursor solution to the substrate, freeze-drying the catalytic metal precursor solution applied to the substrate, and reducing the freeze-dried catalytic metal precursor to a catalytic metal; and growing carbon nanotubes on the catalyst particles by supplying a carbon source to the catalyst particles.
  • According to another aspect of the present invention, there is provided a method of manufacturing carbon nanotubes, the method including: applying a catalytic metal precursor solution to the substrate; cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution; evaporating the solvent in the catalytic metal precursor solution under a reduced pressure to form catalytic metal precursor particles; converting the catalytic metal precursor particles to a catalyst particles; and growing carbon nanotubes on the catalyst particles.
  • It is preferred that the catalytic metal precursor particles is converted into the catalyst particles by heating the catalytic metal precursor particles in an oxidation atmosphere to oxidize the catalytic metal precursor particles and reducing the oxidized catalytic metal precursor particles to the catalyst particles by heat-treatment or plasma-treatment.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • A more complete appreciation of the present invention, and many of the above and other features and advantages of the present invention, will be readily apparent as the same becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings in which like reference symbols indicate the same or similar components, wherein:
  • FIG. 1 is an optical microscopic image illustrating catalyst particles for manufacturing carbon nanotubes, prepared according to an Example of the present invention;
  • FIG. 2 is an electron microscopic image illustrating a side view of carbon nanotubes prepared according to an Example of the present invention;
  • FIG. 3 is an electron microscopic image illustrating a top view of carbon nanotubes prepared according to an Example of the present invention;
  • FIG. 4 is an optical microscopic image illustrating catalyst particles for manufacturing carbon nanotubes, prepared according to a Comparative Example;
  • FIG. 5 is an enlarged view of a part of FIG. 4; and
  • FIG. 6 is an electron microscopic image illustrating a state of carbon nanotubes prepared according to a Comparative Example.
    • DETAILED DESCRIPTION OF THE INVENTION
  • Hereinafter, a method of forming catalyst particles, on which carbon nanotubes grow based, on a substrate according to an embodiment of the present invention will be described in detail.
  • The method of forming catalyst particles includes: applying a catalytic metal precursor solution to a substrate; freeze-drying the catalytic metal precursor solution applied to the substrate; and reducing the freeze-dried catalytic metal precursor to catalytic metal.
  • The catalytic metal precursor solution includes a catalytic metal precursor and a solvent for dissolving the catalytic metal precursor.
  • The catalytic metal precursor may be any material that can be converted to metal particles, on which carbon nanotubes can grow based. An example of the catalytic metal precursor includes an organo-metallic compound. The organo-metallic compound can contain at least one metal element selected from the group consisting of Fe, Co, Ni, Y, Mo, Cu, Pt, V, and Ti. Examples of the organo-metallic compound include iron acetate, iron oxalate, cobalt acetate, nickel acetate, ferrocene, or a mixture thereof.
  • The solvent may be any liquid material that can dissolve the catalytic metal precursor. Examples of the solvent include ethanol, ethylene glycol, polyethylene glycol, polyvinyl alcohol, and a mixture thereof.
  • The concentration of the catalytic metal precursor in the catalytic metal precursor solution is not particularly limited. If the concentration of the catalytic metal precursor in the catalytic metal precursor solution is too low, the carbon nanotubes may not be generated in a subsequent process of manufacturing. If the concentration of the catalytic metal precursor in the catalytic metal precursor solution is too high, the diameter of the carbon nanotubes generated in a subsequent process of manufacturing may be increased or the crystallinity of the carbon nanotubes generated or carbon nanofibers may be reduced. The concentration of the catalytic metal precursor in the catalytic metal precursor solution can preferably be about 10 mM to 200 mM.
  • The substrate may be composed of any material, to which catalyst particles can be attached, for example, a metal with a high melting point, such as Mo, Cr, and W, silicon, glass, plastic, quartz, and the like.
  • The method of applying the catalytic metal precursor solution to the substrate may be any method capable of uniformly coating the solution on the surface of the substrate. Examples of the method include dip coating, evaporation coating, screen printing, spin coating, and the like. These methods can also be used in a combination.
  • The catalytic metal precursor solution can be applied to the entire surface of the substrate or on only a part of the surface of the substrate.
  • The catalytic metal precursor solution applied to the substrate is freeze-dried. The freeze-drying process includes cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution and evaporating the solvent in the catalytic metal precursor solution under a reduced pressure.
  • The freezing point of the catalytic metal precursor solution may vary depending on a composition of the catalytic metal precursor solution. That is, the freezing point of the catalytic metal precursor solution can be determined by the type of the catalytic metal precursor, the type of the solvent, the concentration of the catalytic metal precursor, and the like. The freezing point of the catalytic metal precursor solution can be easily determined by those skilled in the art through thermodynamical calculation and the method of trial and error. The freezing point of the catalytic metal precursor solution can also be selected by adjusting the composition of the catalytic metal precursor solution.
  • The process of cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalyst solution can be performed using a cooling method suitable for the freezing point of the catalytic metal precursor solution. For example, a freezer, liquid nitrogen, etc. can be used. When using liquid nitrogen, the catalytic metal precursor solution applied to the substrate can be cooled to below the freezing point of the catalytic metal precursor solution by dipping the substrate with the catalytic metal precursor solution applied thereto in liquid nitrogen.
  • After the catalytic metal precursor solution applied to the substrate freezes, the substrate is subjected to a reduced pressure in order to allow the solvent in the frozen catalytic metal precursor solution to evaporate. For example, the substrate with the frozen catalytic metal precursor solution applied thereto is placed in a vacuum chamber, and then the pressure of the inside of the vacuum chamber is reduced.
  • The reduced pressure should be sufficient to allow the solvent in the frozen catalytic metal precursor solution to evaporate. Hereinafter, the reduced pressure sufficient to allow the solvent in the frozen catalytic metal precursor solution to evaporate is abbreviated to “evaporation pressure”. The evaporation pressure can vary depending on a composition the used catalytic metal precursor solution. That is, the evaporation pressure can be determined by the type of the catalytic metal precursor, the type of the solvent, the concentration of the catalytic metal precursor, freezing point, and the like. The evaporation pressure of the catalytic metal precursor solution can be easily determined by those skilled in the art through thermodynamical calculation and the method of trial and error. The evaporation pressure of the catalytic metal precursor solution can also be selected by adjusting the composition of the catalytic metal precursor solution, freezing point, and the like.
  • The solvent in the frozen catalytic metal precursor solution is removed through the evaporation. As a result, catalytic metal precursor components are formed in a particle form on the substrate. It is noted that the catalytic metal precursor particles formed according to the present method have particle size with high uniformity and a uniform distribution on the substrate.
  • Subsequently, the catalytic metal precursor particles formed on the substrate are reduced to catalytic metal particles. The process of reducing the catalytic metal precursor particles to catalytic metal particles can be performed, for example, as follows. First, the catalytic metal precursor is converted into an oxide through heat-treatment in an oxidation atmosphere, and then the oxide is heat-treated or plasma treated in a reduction atmosphere to be reduced to a metal. The process of reducing the catalytic metal precursor can be performed by various methods known in the art, and thus, the detailed description thereof will be omitted herein.
  • FIG. 1 is an electron microscopic image of catalytic metal particles prepared according to an Example of the present invention. Referring to FIG. 1, the catalytic metal particles are uniformly distributed on the substrate and the particle sizes thereof are relatively uniform.
  • A method of manufacturing carbon nanotubes according to an embodiment of the present invention will now be described in more detail.
  • The method of manufacturing carbon nanotubes includes forming catalyst particles, on which carbon nanotubes grow based, on a substrate by applying a catalytic metal precursor solution to the substrate, freeze-drying the catalytic metal precursor solution applied to the substrate, and reducing the freeze-dried catalytic metal precursor to catalytic metal; and growing carbon nanotubes on the catalyst particles by supplying a carbon source to the catalyst particles.
  • The process of forming catalyst particles on the substrate is performed in the same manner as described in the method of forming catalyst particles.
  • The process of growing carbon nanotubes on the catalyst particles by supplying the carbon source to the catalyst particles may be performed by various methods useful for the manufacture of carbon nanotubes.
  • For example, the process of growing carbon nanotubes on the catalyst particles includes placing the substrate on which the catalyst particles are formed in a reaction chamber, supplying carbon precursor gas into the reaction chamber, and decomposing the carbon precursor gas in the reaction chamber to supply carbon to the catalyst particles.
  • The process of growing the carbon nanotubes can be performed by low pressure chemical vapor deposition, thermal chemical vapor deposition, PECVD, or a combination thereof.
  • Examples of the carbon precursor gas include carbon containing compounds such as acetylene, methane, propane, ethylene, carbon monoxide, carbon dioxide, alcohol, and benzene.
  • If the internal temperature of the reaction chamber is too low, the crystallinity of the generated carbon nanotubes may be diminished. If the internal temperature of the reaction chamber is too high, the carbon nanotubes may not be formed. In view of this, the internal temperature of the reaction chamber may preferably be in the range of about 450 to 1100° C.
  • Other conditions in the process of growing carbon nanotubes may typically be those suitable for the growth of carbon nanotubes and be easily selected by those skilled in the art according to specific application purposes. Thus, detailed description of other conditions will be omitted herein.
  • Since in the method of manufacturing carbon nanotubes of the present embodiment, carbon nanotubes grow based on catalyst particles that have a uniform particle size and are uniformly distributed on the substrate, the uniformity of the resulting carbon nanotubes is also highly improved. The uniformity of carbon nanotubes is evaluated by the uniformity of the lengths and diameters of the carbon nanotubes. The lengths and diameters of carbon nanotubes can be measured by an electron microscope and a transmittance electron microscope, respectively.
  • Further, the vertical orientation characteristic of carbon nanotubes manufactured by the method of the present embodiment is very good. This can be confirmed from an electron microscopic image of FIG. 2. FIG. 2 is an image showing a side view of carbon nanotubes prepared in an Example of the present invention. Referring to FIG. 2, the carbon nanotubes prepared according to the method of the present embodiment are vertically oriented without being entangled with one another.
  • FIG. 3 is an image showing a top view of carbon nanotubes prepared in an Example of the present invention. Referring to FIG. 3, the production density of carbon nanotubes prepared according to the method of the present embodiment is uniform.
    • EXAMPLE
  • A 40 mM iron acetate solution was prepared using ethanol and ethylene glycol as a solvent. 20 mL of ethanol and 20 mL of ethylene glycol were added to 0.1 g of iron acetate powder to obtain a solution having a proper viscosity. A silicon substrate with a diameter of 20.32 cm was dipped in the obtained solution. The coated substrate was cooled immediately with liquid nitrogen and then transferred into a vacuum chamber. Then, a vacuum less than 0.1 mmHg was applied to the chamber in order to evaporate the solvent. To minimize an amount of the remained solvent, the substrate was further heated at 100° C.
  • The freeze-dried substrate was heat-treated at 300° C. for 10 minutes in order to oxidize the iron acetate. Then, the substrate was subjected to a reduction treatment with hydrogen at 600° C.
  • As a result, the iron particles were uniformly formed on the substrate. FIG. 1 is an electron microscopic image of iron particles formed on the silicon substrate according to the present Example. Referring to FIG. 1, the iron particles are uniformly distributed on the substrate and the particle sizes thereof are relatively uniform.
  • The substrate having iron particles formed thereon was placed in a reaction chamber for chemical vapor deposition (CVD), an internal temperature of which is 600° C., and then a mixed gas of carbon monoxide and hydrogen (weight ratio 1:2) was supplied to the reaction chamber for 20 minutes to synthesize carbon nanotubes based on the iron particles.
  • FIG. 2 is an image showing a side view of carbon nanotubes prepared in the present Example. As is apparent from FIG. 2, the carbon nanotubes prepared in the present Example are vertically oriented without being entangled with one another. FIG. 3 is an image showing a top view of carbon nanotubes prepared in the present Example. It can be seen from FIG. 3 that the production density of carbon nanotubes prepared in the present Example is uniform.
  • To evaluate the uniformity of the formed carbon nanotubes, the measurements of the lengths and the diameters of the carbon nanotubes using an electron microscope and a transmittance electron microscope, respectively, were performed on the respective parts of the substrate, which were equally divided into 9 parts. As a result, it is confirmed that carbon nanotubes on the substrate equally divided into 9 parts has a uniformity within ±5%.
    • Comparitive Example
  • Carbon nanotubes were synthesized in the same manner as in the above Example, except that the iron acetate solution applied to the substrate was not freeze-dried but naturally dried.
  • FIG. 4 is an optical microscopic image showing iron particles prepared in Comparative Example. FIG. 5 is an enlarged view of a part of FIG. 4. As seen from FIGS. 4 and 5, iron particles prepared in Comparative Example have no uniformity.
  • FIG. 6 is an electron microscopic image showing a form of carbon nanotube clusters synthesized in Comparative Example. Referring to FIG. 6, the carbon nanotubes synthesized in Comparative Example are partially lumped on the substrate, are entangled with one another, and not vertically oriented.
  • The method of forming catalyst particles according to an embodiment of the present invention can minimize the agglomeration and/or recrystallization of the catalyst particles when forming the catalyst particles by freeze-drying the catalyst metal precursor solution. The catalyst particles formed by the method of the present embodiment have a very uniform particle size and a very uniform distribution on the substrate.
  • In the method of manufacturing carbon nanotubes according to another embodiment of the present invention, the carbon nanotubes grow based on the catalyst particles having a uniform particle size and a uniform distribution on the substrate, and thus, the synthesized carbon nanotubes have highly improved uniformity.
  • While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.

Claims (20)

1. A method of preparing catalyst particles for carbon nanotube manufacture, the method comprising:
applying a catalytic metal precursor solution to a substrate, the catalytic metal precursor solution comprising a catalytic metal precursor and a solvent;
freeze-drying the catalytic metal precursor solution applied to the substrate; and
reducing the freeze-dried catalytic metal precursor to catalytic metal.
2. The method of claim 1, wherein the catalytic metal precursor is an organo-metallic compound.
3. The method of claim 2, wherein the catalytic metal precursor is an organo-metallic compound containing at least one metal element selected from the group consisting of Fe, Co, Ni, Y, Mo, Cu, Pt, V, and Ti.
4. The method of claim 1, wherein the solvent of the catalytic metal precursor solution is ethanol, ethylene glycol, polyethylene glycol, polyvinyl alcohol, or a mixture thereof.
5. The method of claim 1, wherein the concentration of the catalytic metal precursor in the catalytic metal precursor solution is 10 mM to 200 mM.
6. The method of claim 1, wherein the step of freeze-drying the catalytic metal precursor solution comprises cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution and evaporating the solvent in the catalytic metal precursor solution under a reduced pressure.
7. The method of claim 6, wherein the step of cooling the catalytic metal precursor solution comprises using a freezer or liquid nitrogen.
8. Catalyst particles prepared by the method of claim 1.
9. A method of manufacturing carbon nanotubes, comprising utilizing the catalyst particles of claim 8.
10. A method of manufacturing carbon nanotubes, the method comprising:
forming catalyst particles on a substrate by applying a catalytic metal precursor solution comprising a catalytic metal precursor and a solvent to the substrate, freeze-drying the catalytic metal precursor solution applied to the substrate, and reducing the freeze-dried catalytic metal precursor to a catalytic metal; and
growing carbon nanotubes on the catalyst particles by supplying a carbon source to the catalyst particles.
11. The method of claim 10, wherein the catalytic metal precursor is an organo-metallic compound, and the solvent is ethanol, ethylene glycol, polyethylene glycol, polyvinyl alcohol, or a mixture thereof.
12. The method of claim 10, wherein the catalytic metal precursor is an organo-metallic compound containing at least one metal element selected from the group consisting of Fe, Co, Ni, Y, Mo, Cu, Pt, V, and Ti.
13. The method of claim 10, wherein the concentration of the catalytic metal precursor in the catalytic metal precursor solution is 10 mM to 200 mM.
14. The method of claim 10, wherein the step of freeze-drying the catalytic metal precursor solution comprises cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution and evaporating the solvent in the catalytic metal precursor solution under a reduced pressure.
15. The method of claim 10, wherein the step of cooling the catalytic metal precursor solution comprises using a freezer or liquid nitrogen.
16. The method of 10, wherein the step of growing the carbon nanotubes comprises placing the substrate on which the catalyst particles are formed in a reaction chamber, supplying carbon precursor gas into the reaction chamber, and decomposing the carbon precursor gas in the reaction chamber to supply carbon to the catalyst particles.
17. The method of 16, wherein the internal temperature of the reaction chamber is in the range of about 450 to 1100° C.
18. The method of claim 10, wherein the reduction of the freeze-dried catalytic metal precursor to a catalytic metal comprises heating the freeze-dried catalytic metal precursor in an oxidation atmosphere to oxidize the catalytic metal precursor, and reducing the oxidized catalytic metal precursor to the catalyst metal by heat-treatment or plasma-treatment.
19. A method of manufacturing carbon nanotubes, the method comprising:
applying a catalytic metal precursor solution to the substrate, the catalytic metal precursor solution comprising a catalytic metal precursor dissolved in a solvent;
cooling the catalytic metal precursor solution applied to the substrate below the freezing point of the catalytic metal precursor solution;
evaporating the solvent in the catalytic metal precursor solution to form catalytic metal precursor particles;
converting the catalytic metal precursor particles to a catalyst particles; and
growing carbon nanotubes on the catalyst particles.
20. The method of claim 19, wherein the step of converting the catalytic metal precursor particles to the catalyst particles comprises heating the catalytic metal precursor particles in an oxidation atmosphere to oxidize the catalytic metal precursor particles, and reducing the oxidized catalytic metal precursor particles to the catalyst particles by heat-treatment or plasma-treatment.
US11/158,047 2004-06-22 2005-06-22 Method of preparing catalyst for manufacturing carbon nanotubes Abandoned US20070020167A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0046552 2004-06-22
KR1020040046552A KR20050121426A (en) 2004-06-22 2004-06-22 Method for preparing catalyst for manufacturing carbon nano tubes

Publications (1)

Publication Number Publication Date
US20070020167A1 true US20070020167A1 (en) 2007-01-25

Family

ID=35775022

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/158,047 Abandoned US20070020167A1 (en) 2004-06-22 2005-06-22 Method of preparing catalyst for manufacturing carbon nanotubes

Country Status (4)

Country Link
US (1) US20070020167A1 (en)
JP (1) JP2006007213A (en)
KR (1) KR20050121426A (en)
CN (1) CN1883807A (en)

Cited By (347)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080164801A1 (en) * 2007-01-05 2008-07-10 Samsung Electronics Co., Ltd Field emission electrode, method of manufacturing the same, and field emission device comprising the same
US20090081441A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Fiber Tow Comprising Carbon-Nanotube-Infused Fibers
US20090081383A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Carbon Nanotube Infused Composites via Plasma Processing
CN101447802A (en) * 2007-11-27 2009-06-03 杰脉通信技术(上海)有限公司 Method for catching the terminal of a mobile subscriber
US20100159240A1 (en) * 2007-01-03 2010-06-24 Lockheed Martin Corporation Cnt-infused metal fiber materials and process therefor
US20100192851A1 (en) * 2007-01-03 2010-08-05 Lockheed Martin Corporation Cnt-infused glass fiber materials and process therefor
US20100221424A1 (en) * 2009-02-27 2010-09-02 Lockheed Martin Corporation Low temperature cnt growth using gas-preheat method
US20100224129A1 (en) * 2009-03-03 2010-09-09 Lockheed Martin Corporation System and method for surface treatment and barrier coating of fibers for in situ cnt growth
US20100260931A1 (en) * 2009-04-10 2010-10-14 Lockheed Martin Corporation Method and apparatus for using a vertical furnace to infuse carbon nanotubes to fiber
US20100260933A1 (en) * 2009-04-10 2010-10-14 Lockheed Martin Corporation Apparatus and method for the production of carbon nanotubes on a continuously moving substrate
US20100272891A1 (en) * 2009-04-10 2010-10-28 Lockheed Martin Corporation Apparatus and method for the production of carbon nanotubes on a continuously moving substrate
US20100271253A1 (en) * 2009-04-24 2010-10-28 Lockheed Martin Corporation Cnt-based signature control material
US20100279010A1 (en) * 2009-04-30 2010-11-04 Lockheed Martin Corporation Method and system for close proximity catalysis for carbon nanotube synthesis
US20100276072A1 (en) * 2007-01-03 2010-11-04 Lockheed Martin Corporation CNT-Infused Fiber and Method Therefor
US20110028308A1 (en) * 2009-08-03 2011-02-03 Lockheed Martin Corporation Incorporation of nanoparticles in composite fibers
US20110024694A1 (en) * 2009-02-17 2011-02-03 Lockheed Martin Corporation Composites comprising carbon nanotubes on fiber
US20110024409A1 (en) * 2009-04-27 2011-02-03 Lockheed Martin Corporation Cnt-based resistive heating for deicing composite structures
US20110123735A1 (en) * 2009-11-23 2011-05-26 Applied Nanostructured Solutions, Llc Cnt-infused fibers in thermoset matrices
US20110124483A1 (en) * 2009-11-23 2011-05-26 Applied Nanostructured Solutions, Llc Ceramic composite materials containing carbon nanotube-infused fiber materials and methods for production thereof
US20110133031A1 (en) * 2009-11-23 2011-06-09 Applied Nanostructured Solutions, Llc Cnt-tailored composite air-based structures
US20110143916A1 (en) * 2009-12-15 2011-06-16 SDCmaterials, Inc. Catalyst production method and system
US20110143087A1 (en) * 2009-12-14 2011-06-16 Applied Nanostructured Solutions, Llc Flame-resistant composite materials and articles containing carbon nanotube-infused fiber materials
US20110171469A1 (en) * 2009-11-02 2011-07-14 Applied Nanostructured Solutions, Llc Cnt-infused aramid fiber materials and process therefor
US20110168089A1 (en) * 2007-01-03 2011-07-14 Lockheed Martin Corporation Cnt-infused carbon fiber materials and process therefor
US20110168083A1 (en) * 2007-01-03 2011-07-14 Lockheed Martin Corporation Cnt-infused ceramic fiber materials and process therefor
US20110174519A1 (en) * 2010-01-15 2011-07-21 Applied Nanostructured Solutions, Llc Cnt-infused fiber as a self shielding wire for enhanced power transmission line
US20110186775A1 (en) * 2010-02-02 2011-08-04 Applied Nanostructured Solutions, Llc. Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom
US20110216476A1 (en) * 2010-03-02 2011-09-08 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
WO2012031037A1 (en) * 2010-09-02 2012-03-08 Applied Nanostructured Solutions, Llc Metal substrates having carbon nanotubes grown thereon and processes for production thereof
US8665581B2 (en) 2010-03-02 2014-03-04 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US8784937B2 (en) 2010-09-14 2014-07-22 Applied Nanostructured Solutions, Llc Glass substrates having carbon nanotubes grown thereon and methods for production thereof
US8815341B2 (en) 2010-09-22 2014-08-26 Applied Nanostructured Solutions, Llc Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US9017854B2 (en) 2010-08-30 2015-04-28 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
US9132404B2 (en) 2005-04-19 2015-09-15 SDCmaterials, Inc. Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9163354B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
US9186663B2 (en) 2007-10-15 2015-11-17 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9216406B2 (en) 2011-02-23 2015-12-22 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9308524B2 (en) 2009-12-15 2016-04-12 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9332636B2 (en) 2009-12-15 2016-05-03 SDCmaterials, Inc. Sandwich of impact resistant material
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9498751B2 (en) 2011-08-19 2016-11-22 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
US9522388B2 (en) 2009-12-15 2016-12-20 SDCmaterials, Inc. Pinning and affixing nano-active material
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10312129B2 (en) 2015-09-29 2019-06-04 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10343920B2 (en) * 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10438965B2 (en) 2014-12-22 2019-10-08 Asm Ip Holding B.V. Semiconductor device and manufacturing method thereof
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US10480072B2 (en) 2009-04-06 2019-11-19 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US10541173B2 (en) 2016-07-08 2020-01-21 Asm Ip Holding B.V. Selective deposition method to form air gaps
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US10566223B2 (en) 2012-08-28 2020-02-18 Asm Ip Holdings B.V. Systems and methods for dynamic semiconductor process scheduling
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
US10604847B2 (en) 2014-03-18 2020-03-31 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10720322B2 (en) 2016-02-19 2020-07-21 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top surface
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10741385B2 (en) 2016-07-28 2020-08-11 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US12051602B2 (en) 2020-05-04 2024-07-30 Asm Ip Holding B.V. Substrate processing system for processing substrates with an electronics module located behind a door in a front wall of the substrate processing system
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
US12087586B2 (en) 2020-04-15 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101185904B (en) * 2007-01-18 2011-01-19 江苏工业学院 Selectivity liquid phase hydrogenation catalyst and preparation method and use thereof
US9309123B2 (en) 2007-09-21 2016-04-12 Taiyo Nippon Sanso Corporation Process for producing a carbon nanostructure
KR100905403B1 (en) 2007-10-18 2009-06-30 한국지질자원연구원 Preparation of IronII Acetate Powder from a Low Grade Magnetite
JP2011068509A (en) * 2009-09-25 2011-04-07 Aisin Seiki Co Ltd Carbon nanotube composite and method for producing the same
JP5571994B2 (en) * 2010-03-30 2014-08-13 株式会社東芝 Carbon nanotube aggregate, solar cell, and substrate with waveguide and carbon nanotube aggregate
CN101816956B (en) * 2010-04-20 2011-10-19 武汉理工大学 Method for improving dispersion of nano metal grains on surface of graphitized carbon carrier
JP2014136167A (en) * 2013-01-15 2014-07-28 Toyota Motor Corp Method for supporting catalyst
KR102190543B1 (en) * 2019-01-03 2020-12-14 한국해양대학교 산학협력단 Method for mass synthesis of carbon nanotube and carbon nanotube synthesized from it

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346023B1 (en) * 1998-09-11 2002-02-12 Futaba Denshi Kogyo Kabushiki Kaisha Method of preparing film of carbon nano-tube and film of carbon nano-tube prepared thereby
US20030012722A1 (en) * 2002-07-02 2003-01-16 Jie Liu High yiel vapor phase deposition method for large scale sing walled carbon nanotube preparation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346023B1 (en) * 1998-09-11 2002-02-12 Futaba Denshi Kogyo Kabushiki Kaisha Method of preparing film of carbon nano-tube and film of carbon nano-tube prepared thereby
US20030012722A1 (en) * 2002-07-02 2003-01-16 Jie Liu High yiel vapor phase deposition method for large scale sing walled carbon nanotube preparation

Cited By (469)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132404B2 (en) 2005-04-19 2015-09-15 SDCmaterials, Inc. Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction
US9180423B2 (en) 2005-04-19 2015-11-10 SDCmaterials, Inc. Highly turbulent quench chamber
US9719727B2 (en) 2005-04-19 2017-08-01 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
US9599405B2 (en) 2005-04-19 2017-03-21 SDCmaterials, Inc. Highly turbulent quench chamber
US9216398B2 (en) 2005-04-19 2015-12-22 SDCmaterials, Inc. Method and apparatus for making uniform and ultrasmall nanoparticles
US20100279569A1 (en) * 2007-01-03 2010-11-04 Lockheed Martin Corporation Cnt-infused glass fiber materials and process therefor
US20100276072A1 (en) * 2007-01-03 2010-11-04 Lockheed Martin Corporation CNT-Infused Fiber and Method Therefor
US20100192851A1 (en) * 2007-01-03 2010-08-05 Lockheed Martin Corporation Cnt-infused glass fiber materials and process therefor
US20100159240A1 (en) * 2007-01-03 2010-06-24 Lockheed Martin Corporation Cnt-infused metal fiber materials and process therefor
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US20110168083A1 (en) * 2007-01-03 2011-07-14 Lockheed Martin Corporation Cnt-infused ceramic fiber materials and process therefor
US8951632B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
US8951631B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
US9573812B2 (en) 2007-01-03 2017-02-21 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
US20110168089A1 (en) * 2007-01-03 2011-07-14 Lockheed Martin Corporation Cnt-infused carbon fiber materials and process therefor
US9574300B2 (en) 2007-01-03 2017-02-21 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
US8158217B2 (en) 2007-01-03 2012-04-17 Applied Nanostructured Solutions, Llc CNT-infused fiber and method therefor
US8294348B2 (en) * 2007-01-05 2012-10-23 Samsung Electronics Co., Ltd. Field emission electrode, method of manufacturing the same, and field emission device comprising the same
US8272914B2 (en) 2007-01-05 2012-09-25 Samsung Electronics Co., Ltd. Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls
US20080164801A1 (en) * 2007-01-05 2008-07-10 Samsung Electronics Co., Ltd Field emission electrode, method of manufacturing the same, and field emission device comprising the same
US20090081383A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Carbon Nanotube Infused Composites via Plasma Processing
US20090081441A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Fiber Tow Comprising Carbon-Nanotube-Infused Fibers
US9592492B2 (en) 2007-10-15 2017-03-14 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US9597662B2 (en) 2007-10-15 2017-03-21 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9186663B2 (en) 2007-10-15 2015-11-17 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9737878B2 (en) 2007-10-15 2017-08-22 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US9302260B2 (en) 2007-10-15 2016-04-05 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
CN101447802A (en) * 2007-11-27 2009-06-03 杰脉通信技术(上海)有限公司 Method for catching the terminal of a mobile subscriber
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US20110024694A1 (en) * 2009-02-17 2011-02-03 Lockheed Martin Corporation Composites comprising carbon nanotubes on fiber
US8585934B2 (en) 2009-02-17 2013-11-19 Applied Nanostructured Solutions, Llc Composites comprising carbon nanotubes on fiber
US8580342B2 (en) 2009-02-27 2013-11-12 Applied Nanostructured Solutions, Llc Low temperature CNT growth using gas-preheat method
US20100221424A1 (en) * 2009-02-27 2010-09-02 Lockheed Martin Corporation Low temperature cnt growth using gas-preheat method
US10138128B2 (en) 2009-03-03 2018-11-27 Applied Nanostructured Solutions, Llc System and method for surface treatment and barrier coating of fibers for in situ CNT growth
US20100224129A1 (en) * 2009-03-03 2010-09-09 Lockheed Martin Corporation System and method for surface treatment and barrier coating of fibers for in situ cnt growth
US20100227134A1 (en) * 2009-03-03 2010-09-09 Lockheed Martin Corporation Method for the prevention of nanoparticle agglomeration at high temperatures
US10480072B2 (en) 2009-04-06 2019-11-19 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US20100272891A1 (en) * 2009-04-10 2010-10-28 Lockheed Martin Corporation Apparatus and method for the production of carbon nanotubes on a continuously moving substrate
US20100260931A1 (en) * 2009-04-10 2010-10-14 Lockheed Martin Corporation Method and apparatus for using a vertical furnace to infuse carbon nanotubes to fiber
US20100260933A1 (en) * 2009-04-10 2010-10-14 Lockheed Martin Corporation Apparatus and method for the production of carbon nanotubes on a continuously moving substrate
US8325079B2 (en) 2009-04-24 2012-12-04 Applied Nanostructured Solutions, Llc CNT-based signature control material
US9241433B2 (en) 2009-04-24 2016-01-19 Applied Nanostructured Solutions, Llc CNT-infused EMI shielding composite and coating
US20100271253A1 (en) * 2009-04-24 2010-10-28 Lockheed Martin Corporation Cnt-based signature control material
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
US20100270069A1 (en) * 2009-04-24 2010-10-28 Lockheed Martin Corporation Cnt-infused emi shielding composite and coating
US20110024409A1 (en) * 2009-04-27 2011-02-03 Lockheed Martin Corporation Cnt-based resistive heating for deicing composite structures
US8664573B2 (en) 2009-04-27 2014-03-04 Applied Nanostructured Solutions, Llc CNT-based resistive heating for deicing composite structures
US20100279010A1 (en) * 2009-04-30 2010-11-04 Lockheed Martin Corporation Method and system for close proximity catalysis for carbon nanotube synthesis
US8969225B2 (en) 2009-08-03 2015-03-03 Applied Nano Structured Soultions, LLC Incorporation of nanoparticles in composite fibers
US20110028308A1 (en) * 2009-08-03 2011-02-03 Lockheed Martin Corporation Incorporation of nanoparticles in composite fibers
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20110171469A1 (en) * 2009-11-02 2011-07-14 Applied Nanostructured Solutions, Llc Cnt-infused aramid fiber materials and process therefor
US8662449B2 (en) 2009-11-23 2014-03-04 Applied Nanostructured Solutions, Llc CNT-tailored composite air-based structures
US8601965B2 (en) 2009-11-23 2013-12-10 Applied Nanostructured Solutions, Llc CNT-tailored composite sea-based structures
US20110123735A1 (en) * 2009-11-23 2011-05-26 Applied Nanostructured Solutions, Llc Cnt-infused fibers in thermoset matrices
US20110124483A1 (en) * 2009-11-23 2011-05-26 Applied Nanostructured Solutions, Llc Ceramic composite materials containing carbon nanotube-infused fiber materials and methods for production thereof
US20110133031A1 (en) * 2009-11-23 2011-06-09 Applied Nanostructured Solutions, Llc Cnt-tailored composite air-based structures
US8168291B2 (en) 2009-11-23 2012-05-01 Applied Nanostructured Solutions, Llc Ceramic composite materials containing carbon nanotube-infused fiber materials and methods for production thereof
US20110135491A1 (en) * 2009-11-23 2011-06-09 Applied Nanostructured Solutions, Llc Cnt-tailored composite land-based structures
US20110132245A1 (en) * 2009-11-23 2011-06-09 Applied Nanostructured Solutions, Llc Cnt-tailored composite sea-based structures
US20110143087A1 (en) * 2009-12-14 2011-06-16 Applied Nanostructured Solutions, Llc Flame-resistant composite materials and articles containing carbon nanotube-infused fiber materials
US8545963B2 (en) 2009-12-14 2013-10-01 Applied Nanostructured Solutions, Llc Flame-resistant composite materials and articles containing carbon nanotube-infused fiber materials
US20110143916A1 (en) * 2009-12-15 2011-06-16 SDCmaterials, Inc. Catalyst production method and system
US9149797B2 (en) * 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US9533289B2 (en) 2009-12-15 2017-01-03 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9522388B2 (en) 2009-12-15 2016-12-20 SDCmaterials, Inc. Pinning and affixing nano-active material
US9308524B2 (en) 2009-12-15 2016-04-12 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9332636B2 (en) 2009-12-15 2016-05-03 SDCmaterials, Inc. Sandwich of impact resistant material
US9167736B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
US20110174519A1 (en) * 2010-01-15 2011-07-21 Applied Nanostructured Solutions, Llc Cnt-infused fiber as a self shielding wire for enhanced power transmission line
US9163354B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
US20110186775A1 (en) * 2010-02-02 2011-08-04 Applied Nanostructured Solutions, Llc. Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom
US8999453B2 (en) 2010-02-02 2015-04-07 Applied Nanostructured Solutions, Llc Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom
US20110216476A1 (en) * 2010-03-02 2011-09-08 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US8665581B2 (en) 2010-03-02 2014-03-04 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
US8787001B2 (en) 2010-03-02 2014-07-22 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US9907174B2 (en) 2010-08-30 2018-02-27 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
US9017854B2 (en) 2010-08-30 2015-04-28 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
WO2012031037A1 (en) * 2010-09-02 2012-03-08 Applied Nanostructured Solutions, Llc Metal substrates having carbon nanotubes grown thereon and processes for production thereof
WO2012031042A1 (en) * 2010-09-02 2012-03-08 Applied Nanostructured Solutions, Llc Metal substrates having carbon nanotubes grown thereon and methods for production thereof
US8784937B2 (en) 2010-09-14 2014-07-22 Applied Nanostructured Solutions, Llc Glass substrates having carbon nanotubes grown thereon and methods for production thereof
US8815341B2 (en) 2010-09-22 2014-08-26 Applied Nanostructured Solutions, Llc Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof
US9216406B2 (en) 2011-02-23 2015-12-22 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9433938B2 (en) 2011-02-23 2016-09-06 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PTPD catalysts
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US9498751B2 (en) 2011-08-19 2016-11-22 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
US10566223B2 (en) 2012-08-28 2020-02-18 Asm Ip Holdings B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9533299B2 (en) 2012-11-21 2017-01-03 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9950316B2 (en) 2013-10-22 2018-04-24 Umicore Ag & Co. Kg Catalyst design for heavy-duty diesel combustion engines
US9566568B2 (en) 2013-10-22 2017-02-14 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10604847B2 (en) 2014-03-18 2020-03-31 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10086356B2 (en) 2014-03-21 2018-10-02 Umicore Ag & Co. Kg Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10413880B2 (en) 2014-03-21 2019-09-17 Umicore Ag & Co. Kg Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10438965B2 (en) 2014-12-22 2019-10-08 Asm Ip Holding B.V. Semiconductor device and manufacturing method thereof
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10312129B2 (en) 2015-09-29 2019-06-04 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11956977B2 (en) 2015-12-29 2024-04-09 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10720322B2 (en) 2016-02-19 2020-07-21 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top surface
US10343920B2 (en) * 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10541173B2 (en) 2016-07-08 2020-01-21 Asm Ip Holding B.V. Selective deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10741385B2 (en) 2016-07-28 2020-08-11 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US10943771B2 (en) 2016-10-26 2021-03-09 Asm Ip Holding B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10644025B2 (en) 2016-11-07 2020-05-05 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11970766B2 (en) 2016-12-15 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US12000042B2 (en) 2016-12-15 2024-06-04 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US12043899B2 (en) 2017-01-10 2024-07-23 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468262B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10950432B2 (en) 2017-04-25 2021-03-16 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11976361B2 (en) 2017-06-28 2024-05-07 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US12033861B2 (en) 2017-10-05 2024-07-09 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11972944B2 (en) 2018-01-19 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US12020938B2 (en) 2018-03-27 2024-06-25 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11296189B2 (en) 2018-06-21 2022-04-05 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11411088B2 (en) 2018-11-16 2022-08-09 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11959171B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11453946B2 (en) 2019-06-06 2022-09-27 Asm Ip Holding B.V. Gas-phase reactor system including a gas detector
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11996304B2 (en) 2019-07-16 2024-05-28 Asm Ip Holding B.V. Substrate processing device
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US12040229B2 (en) 2019-08-22 2024-07-16 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US12033849B2 (en) 2019-08-23 2024-07-09 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US12087586B2 (en) 2020-04-15 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US12051602B2 (en) 2020-05-04 2024-07-30 Asm Ip Holding B.V. Substrate processing system for processing substrates with an electronics module located behind a door in a front wall of the substrate processing system
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12055863B2 (en) 2020-07-17 2024-08-06 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Also Published As

Publication number Publication date
JP2006007213A (en) 2006-01-12
KR20050121426A (en) 2005-12-27
CN1883807A (en) 2006-12-27

Similar Documents

Publication Publication Date Title
US20070020167A1 (en) Method of preparing catalyst for manufacturing carbon nanotubes
EP2543632B1 (en) Method for producing aligned carbon nanotube aggregate
US8101150B2 (en) Control of carbon nanotube diameter using CVD or PECVD growth
US7687109B2 (en) Apparatus and method for making carbon nanotube array
US7157068B2 (en) Varied morphology carbon nanotubes and method for their manufacture
US20060067872A1 (en) Method of preparing catalyst base for manufacturing carbon nanotubes and method of manufacturing carbon nanotubes employing the same
EP1061043A1 (en) Low-temperature synthesis of carbon nanotubes using metal catalyst layer for decomposing carbon source gas
US7682658B2 (en) Method for making carbon nanotube array
US20100227058A1 (en) Method for fabricating carbon nanotube array
JP4730707B2 (en) Catalyst for carbon nanotube synthesis and method for producing the same, catalyst dispersion, and method for producing carbon nanotube
JP2004250306A (en) Method of growing matrix of carbon nanotube
CA2578725A1 (en) Carbon nanotube assembly and manufacturing method thereof
Sengupta Carbon nanotube fabrication at industrial scale: Opportunities and challenges
US7585484B2 (en) Apparatus and method for synthesizing carbon nanotubes
JP2005263564A (en) Method for manufacturing carbon nanotube
US20070071895A1 (en) Method for making carbon nanotube-based device
WO2012057229A1 (en) Process for production of carbon nanotubes
KR20070071177A (en) Method for manufacturing single-walled carbon nanotube on glass
JP4977982B2 (en) Method for producing linear carbon material and method for producing functional device
JP2004051432A (en) Substrate for manufacturing carbon nanotube and method of manufacturing carbon nanotube using the same
JP6623512B2 (en) Carbon nanostructure aggregate and method for producing the same
JP2006239618A (en) Catalyst for carbon nanotube growth and manufacturing method thereof
US7799307B2 (en) Method of growing single-walled carbon nanotubes
Bistamam et al. An overview of selected catalytic chemical vapor deposition parameter for aligned carbon nanotube growth
Srivastava et al. Effect of catalyst film thickness on the growth, microstructure and field emission characteristics of carbon nanotubes

Legal Events

Date Code Title Description
AS Assignment

Owner name: SAMSUNG SDI CO., LTD., A CORPORATION ORGANIZED UND

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HAN, IN-TAEK;KIM, HA-JIN;REEL/FRAME:016771/0580

Effective date: 20050621

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO PAY ISSUE FEE