TWI456731B - 半導體裝置、固體攝像裝置及電子機器 - Google Patents

半導體裝置、固體攝像裝置及電子機器 Download PDF

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TWI456731B
TWI456731B TW099147359A TW99147359A TWI456731B TW I456731 B TWI456731 B TW I456731B TW 099147359 A TW099147359 A TW 099147359A TW 99147359 A TW99147359 A TW 99147359A TW I456731 B TWI456731 B TW I456731B
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wafer
circuit
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semiconductor device
wiring
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TW201143020A (en
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Shunichi Sukegawa
Noriyuki Fukushima
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Sony Corp
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    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)

Claims (18)

  1. 一種半導體裝置，其包含：第1晶圓；及第2晶圓；且具有將上述第1晶圓與上述第2晶圓貼合之積層構造，上述第1晶圓係搭載高耐壓電晶體系統電路，上述第2晶圓係搭載較上述高耐壓電晶體系統電路為低耐壓之低耐壓電晶體系統電路，上述第1晶圓與上述第2晶圓之配線係電性連接。
  2. 如請求項1之半導體裝置，其中上述第1晶圓與上述第2晶圓之配線係使用貫通上述第1晶圓之通孔而電性連接。
  3. 如請求項1之半導體裝置，其中上述第1晶圓係搭載類比系統電路，上述第2晶圓係搭載數位系統電路。
  4. 如請求項1之半導體裝置，其中於上述第2晶圓上配置有接合墊及輸入輸出電路，於上述第1晶圓上形成有用以打線接合於上述第2晶圓之開口部。
  5. 如請求項1之半導體裝置，其中上述第1晶圓係以於所搭載之電路區塊之角部具有電源及信號之端口的方式佈局，信號及電力供給用之通孔係配置於上述電路區塊之角部附近。
  6. 如請求項5之半導體裝置，其中於上述第1晶圓上形成有：電力供給用通孔；及信號用通孔；且自電力供給用通孔供給之電力之電源配線係連接於電路區塊之端口，信號配線係連接於第1晶圓之電路區塊之角部附近之通孔。
  7. 如請求項5之半導體裝置，其中上述第1晶圓中，將電力供給用通孔間之空間以與連接配線層不同之配線層予以配線，並連接於電路區塊。
  8. 如請求項5之半導體裝置，其中於上述第1晶圓中，電力供給用通孔係配置於較信號供給用通孔相對於晶圓之緣部更內側。
  9. 如請求項5之半導體裝置，其中使用上述第2晶圓之配線，強化上述第1晶圓之電源配線。
  10. 如請求項5之半導體裝置，其中將電路區塊分割為複數個，且於電路區塊間配置有上述通孔。
  11. 如請求項10之半導體裝置，其中於上述第2晶圓中，藉由與上述第1晶圓之電源配線平行地配線之電源線作為內襯。
  12. 一種固體攝像裝置，其包含： 像素部，其係將進行光電轉換之複數個像素排列為矩陣狀而成；及像素信號讀出電路，其自上述像素部進行像素信號之讀出；上述像素信號讀出電路包含：比較器，其將讀出信號電位與參照電壓進行比較判定；計數器，其計數上述比較器之比較時間；第1晶圓；及第2晶圓；且具有將上述第1晶圓與上述第2晶圓貼合之積層構造，上述第1晶圓至少搭載上述像素部及比較器，上述第2晶圓至少搭載上述計數器，上述第1晶圓與上述第2晶圓間之配線係電性連接。
  13. 如請求項12之固體攝像裝置，其中上述第1晶圓與上述第2晶圓之配線係藉由貫通上述第1晶圓之通孔而電性連接。
  14. 如請求項12之固體攝像裝置，其中上述第1晶圓係搭載類比系統電路，上述第2晶圓係搭載數位系統電路。
  15. 如請求項12之固體攝像裝置，其中於上述第2晶圓上配置有接合墊及輸入輸出電路，於上述第1晶圓上，在上述像素部之周圍形成有用以打線接合於上述第2晶圓之開口部。
  16. 如請求項12之固體攝像裝置，其中上述第1晶圓係以於所搭載之電路區塊之角部具有電源及信號之端口的方式佈局，信號及電力供給用之通孔係配置於上述電路區塊之角部附近。
  17. 如請求項16之固體攝像裝置，其中於上述第1晶圓上形成有：電力供給用通孔；及信號用通孔；且自電力供給用通孔供給之電力之電源配線係連接於電路區塊之端口，信號配線係連接於第1晶圓之電路區塊之角部附近之通孔。
  18. 一種電子機器，其包含：固體攝像元件；及光學系統，其將被攝體像成像於上述攝像元件；上述固體攝像元件包含：像素部，其係將進行光電轉換之複數個像素排列為矩陣狀而成；及像素信號讀出電路，其自上述像素部進行像素信號之讀出；上述像素信號讀出電路包含：比較器，其將讀出信號電位與參照電壓進行比較判定，並輸出該判定信號； 計數器，其計數上述比較器之比較時間；第1晶圓；及第2晶圓；且具有將上述第1晶圓與上述第2晶圓貼合之積層構造，上述第1晶圓至少搭載上述像素部及上述比較器，上述第2晶圓至少搭載上述計數器，上述第1晶圓與上述第2晶圓間之配線係電性連接。
TW099147359A 2010-01-08 2010-12-31 半導體裝置、固體攝像裝置及電子機器 TWI456731B (zh)

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JP2010255934A JP5685898B2 (ja) 2010-01-08 2010-11-16 半導体装置、固体撮像装置、およびカメラシステム

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TW201143020A (en) 2011-12-01
US20170180668A1 (en) 2017-06-22
KR101775860B1 (ko) 2017-09-06
KR20160106782A (ko) 2016-09-12
JP2011159958A (ja) 2011-08-18
US10396115B2 (en) 2019-08-27
US10319773B2 (en) 2019-06-11
US20170330912A1 (en) 2017-11-16

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