TWI389208B - 塗料組成物、使用其之二氧化矽質膜的製法、二氧化矽質膜及附有二氧化矽質膜的基板 - Google Patents
塗料組成物、使用其之二氧化矽質膜的製法、二氧化矽質膜及附有二氧化矽質膜的基板 Download PDFInfo
- Publication number
- TWI389208B TWI389208B TW094127420A TW94127420A TWI389208B TW I389208 B TWI389208 B TW I389208B TW 094127420 A TW094127420 A TW 094127420A TW 94127420 A TW94127420 A TW 94127420A TW I389208 B TWI389208 B TW I389208B
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- Prior art keywords
- group
- aluminum
- oxide film
- cerium oxide
- coating composition
- Prior art date
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- 239000008199 coating composition Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 49
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 49
- 229910052782 aluminium Inorganic materials 0.000 claims description 47
- -1 aluminum compound Chemical class 0.000 claims description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 238000001354 calcination Methods 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 15
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 229910052707 ruthenium Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 5
- 125000000962 organic group Chemical group 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical group CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 description 23
- 239000000243 solution Substances 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- AFABGHUZZDYHJO-UHFFFAOYSA-N 2-Methylpentane Chemical compound CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- WCOATMADISNSBV-UHFFFAOYSA-K diacetyloxyalumanyl acetate Chemical compound [Al+3].CC([O-])=O.CC([O-])=O.CC([O-])=O WCOATMADISNSBV-UHFFFAOYSA-K 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- KDTWXGUXWNBYGS-UHFFFAOYSA-N 1,2,3,3,4,4-hexamethyl-5H-diazepine Chemical compound CC1(C(N(N(C=CC1)C)C)(C)C)C KDTWXGUXWNBYGS-UHFFFAOYSA-N 0.000 description 1
- VIDOPANCAUPXNH-UHFFFAOYSA-N 1,2,3-triethylbenzene Chemical compound CCC1=CC=CC(CC)=C1CC VIDOPANCAUPXNH-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910008072 Si-N-Si Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical group [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- VWCZQUKAVAOZTQ-UHFFFAOYSA-M di(propan-2-yloxy)alumanylium;3-oxohexanoate Chemical group [Al+3].CC(C)[O-].CC(C)[O-].CCCC(=O)CC([O-])=O VWCZQUKAVAOZTQ-UHFFFAOYSA-M 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007970 homogeneous dispersion Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- GGFBICGBDXVAGX-UHFFFAOYSA-N propylaluminum Chemical compound [Al].[CH2]CC GGFBICGBDXVAGX-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- OBROYCQXICMORW-UHFFFAOYSA-N tripropoxyalumane Chemical compound [Al+3].CCC[O-].CCC[O-].CCC[O-] OBROYCQXICMORW-UHFFFAOYSA-N 0.000 description 1
- CNWZYDSEVLFSMS-UHFFFAOYSA-N tripropylalumane Chemical compound CCC[Al](CCC)CCC CNWZYDSEVLFSMS-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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Description
本發明關於二氧化矽質膜之製法。更詳而言之,關於平帶轉移值小、絕緣特性優良的二氧化矽質膜之製法。
通常,於如半導體裝置的電子裝置中,半導體元件,例如電晶體、電阻、及其它者,係配置在基板上,而必須使它們在電氣上絕緣。因此,在此等元件之間,必須有用於分開元件的區域,其被稱為隔離區域。作為用於形成這樣的隔離區域之材料,一般為使用二氧化矽質膜。
用於製造二氧化矽質膜的方法,係有各種的檢討。其中,有檢討藉由將聚矽氮烷薄膜煅燒以製造二氧化矽質膜的技術(例如專利文獻1或2)。
然而,以該等方法所製造的二氧化矽質膜,考量由於起因於原料的聚矽氮烷或溶劑所致的氮、碳、氫之殘留,而使得CV曲線的平帶轉移係比高密度電漿CVD法所形成的二氧化矽質膜高,而在絕緣特性方面係有改良的餘地,特別是在由於適用的基板之耐熱性、耐氧化性的限制而必須壓低加熱溫度的情況中,氮、碳或氫的殘存有增加的傾向。
另一方面,亦已知有對聚矽氮烷化合物添加鋁化合物或是將鋁併入聚矽氮烷化合物的構造中之技術(專利文獻3及4)。但是他們並沒有檢討由其所形成的二氧化矽質膜之平帶轉移。
[專利文獻1]特許第3511024號[專利文獻2]特許第3178412號[專利文獻3]特開平8-5963號明細書[專利文獻4]特開平11-105185號明細書[專利文獻5]特開平4-63833號明細書[專利文獻6]特開平9-31333號明細書[專利文獻7]特開平8-176511號明細書[專利文獻8]特開平8-176512號明細書[專利文獻9]特開平5-345826號明細書
本發明係為解決該等問題而提供平帶轉移值小,即絕緣特性等的電氣特性優良的二氧化矽質膜之製法。
本發明的塗料組成物之特徵為含有包含選自由數量平均分子量為100~50,000的全氫聚矽氮烷及變性全氫聚矽氮烷所組成的族群的1種以上之聚矽氮烷化合物、鋁化合物及溶劑,其中鋁含量就相對於該聚矽氮烷化合物中所有的矽原子而言,以鋁原子的莫耳比計係10ppb至100ppm。
又,依本發明的二氧化矽質膜之製法,其特徵為將一種塗布液塗佈在基板上,於含水蒸氣、氧或它們的混合氣體之氣氛中進行煅燒,其中該塗布液包含選自由數量平均分子量為100~50,000的全氫聚矽氮烷及變性全氫聚矽氮烷所組成的族群的1種以上之聚矽氮烷化合物、鋁化合物及溶劑,該鋁含量就相對於該聚矽氮烷化合物中所有的矽原子而言,以鋁原子的莫耳比計係10ppb至100ppm又,本發明的二氧化矽質膜,係為藉由將一由含聚矽氮烷化合物和鋁化合物所成的塗布液塗佈在基板上,在氧化氣氛下進行煅燒而獲得的二氧化矽質膜,其中鋁含量就相對於矽原子而言,以鋁原子的莫耳比計係10ppb以上100ppm以下。
依本發明,可製造平帶轉移值少的二氧化矽質膜,藉此可形成電氣特性優良的半導體元件,例如絕緣特性優良的元件分離膜或閘絕緣膜。
於本發明的塗料組成物中,由全氫聚矽氮烷或變性全氫聚矽氮烷所組成族群所選出的1種以上之聚矽氮烷化合物係可視需要地使用任意者。於本發明中,全氫聚矽氮烷係為以下通式(I)所表示者。
H-(SiH2
-NH)n
-H (I)其中,n為表示聚合度之數。
於本發明的塗料組成物中,可使用上述通式(I)的全氫聚矽氮烷經由矽氮烷化合物、醇類或胺類所變性的變性全氫聚矽氮烷。於本發明中,為了減低使用塗料組成物所得到的二氧化矽質膜之平帶轉移,較佳為使用全氫聚矽氮烷,其在含有氫以外的有機基在主鏈中且使用含比較多的有機基之聚矽氮烷化合物的情況時,來自該有機基的碳等之原子會殘存在二氧化矽質膜中,而成為減低本發明的效果之原因。
另一方面,從製造時塗布液的塗布性、保存時的安定性等之觀點看,全氫亦有較佳的情況為使用聚矽氮烷的一部分經變性的變性全氫聚矽氮烷。作為如此使全氫聚矽氮烷變性的化合物,例如可為六甲基二矽氮烷、甲醇、乙醇、伸乙二胺等的化合物。使用它們,藉由將全氫聚矽氮烷的氫之一部分取代,特別是末端氫取代,則可以得到變性全氫聚矽氮烷。就該變性全氫聚矽氮烷而言,專利文獻5~9中有記載。
在本發明的塗料組成物中,所使用的上述全氫聚矽氮烷或變性全氫聚矽氮烷之重量平均分子量,從塗料組成物的塗布性,特別是以旋塗法塗佈時的塗布性之觀點看,係100~50,000,較佳500~20,000。
於本發明的塗料組成物中,該等聚矽氮烷化合物係被溶解在溶劑中。此時所用的溶劑較佳為使用不具有活性氫的惰性有機溶劑。該有機溶劑例如為苯、甲苯、二甲苯、乙基苯、二乙基苯、三甲基苯、三乙基苯等的芳香族烴系溶劑;環己烷、環己烯、十氫萘、乙基環己烷、甲基環己烷、對烷、二戊烯(檸檬烯)、蒎烯等的脂環族烴系溶劑;n-戊烷、i、戊烷、n-己烷、i-己烷、n-庚烷、i-庚烷、n-辛烷、i-辛烷、n-壬烷、i-壬烷、n-癸烷、i-癸烷等的飽和烴化合物、二丙基醚、二丁基醚等的醚系溶劑;甲基異丁基酮等的酮系溶劑;丙二醇單甲醚醋酸酯等的酯系溶劑等。此等之中,特佳為能充分溶解後述的鋁化合物者。
本發明中可使用的鋁化合係沒有特別的限定,但較佳為溶存於聚矽氮烷溶液中者。因此,可對應於塗料組成物中所使用的溶劑作適當的選擇。
本發明中可使用的鋁化合例如可以下述通式表示。Al(Z1
)(Z2
)(Z3
) (A)
其中Z1
、Z2
及Z3
係各獨立地為由氫、羥基、鹵素原子、烷基、環烷基、芳基、烯基、環烯基、烷氧基、乙醯丙酮基所選出的基,Z1
、Z2
及Z3
中的2個或3個可形成環狀構造,Z1
、Z2
及Z3
可為含矽的有機基。
在該等之中,本發明中的鋁化合物較佳為下述通式(A-1)~(A-3)所表示者。Al(OR1
)(OR2
)(OR3
) (A-1) Al(R1
)(R2
)(R3
) (A-2) Al(X1
)(X2
)(X3
) (A-3)
其中R1
、R2
及R3
係各獨立地為氫、碳數1~20的烷基、環烷基或芳基,X1
、X2
及X3
係各獨立地為氟、氯或碘。
更具體地,本發明中所用的鋁化合物例如為三甲氧基鋁、三乙氧基鋁、三異丙氧基鋁、三正丙氧基鋁、三甲基鋁、三乙基鋁、三異丙基鋁、三正丙基鋁、氟化鋁、氯化鋁、碘化鋁、三乙醯丙酮化鋁、三乙基乙醯丙酮化鋁及其它者。又,含矽的鋁化合物例如可使用二-s-丁氧基鋁氧基三乙氧基矽烷等。
此等鋁化合物的添加量係沒有特別的限定,只要在不損害本發明的效果之範圍內即可。然而,為了更顯著展現本發明的效果,較佳相對於聚矽氮烷化合物中所含有的矽原子,以鋁原子的莫耳比計係10ppb以上,更佳為100ppb以上。又,從保持良好的耐電壓特性之觀點看,較佳為相對於聚矽氮烷化合物中所含有矽原子,以鋁原子的莫耳比計係100ppm以下,更佳為10ppm以下。再者,該鋁化合物的添加量係遠更少於專利文獻3或4中所記載者,由該極少量的鋁化合物,可令內驚異地劇烈改良所得到的二氧化矽質膜之特性。
於本發明的塗料組成物中,鋁化合物可藉由任意的方法加到塗料組成物中。具體地,可將固體狀的鋁化合物加到塗料組成物中使溶解,或使鋁化合物溶解在溶劑中然後混入塗料組成物中。於使鋁化合物溶解在溶劑中的情況,可使用溶解上述聚矽氮烷化合物時能用的溶劑。此時,聚矽氮烷化合物之溶解時所用的溶劑亦可不同於鋁化合物之溶液的調製時所用的溶劑。鋁化合物之添加時的溫度或壓力係沒有特別的限制,通常於0~200℃、常壓~10kg/cm2
G作添加。
本發明的二氧化矽質膜之製法係為將上述的塗料組成物塗佈在基板上,藉由煅燒以形成二氧化矽質膜。
所使用的基板之表面材質係沒有特別的限定,例如可為裸矽,視需要可為成膜有熱氧化膜或氮化矽膜的矽晶圓等。視需要可於基板上形成隔離溝等的構造。
作為對基板表面塗佈塗料組成物的方法,例如可為習知的方法,如旋塗法、含浸法、噴霧法、轉印法等。
對於基板表面上所形成的塗布膜,在視需要去除過剩的有機溶劑(乾燥)後,於含水蒸氣、氧或其之混合氣體的氣氛中,即在氧化氣氛中進行煅燒。
此處,在不損害本發明之效果的範圍內,於氣氛中亦有混合存在有氮或氦等的惰性氣體。
於本發明的方法中,煅燒條件為了使二氧化矽質膜中所殘留的雜質元素,例如碳、氫、氮等儘可能地少,故較佳為在比較強的氧化條件下進行。於本發明中,特佳為在含氧的氣氛下進行煅燒。此處,氧的含有率以體積為基準時,較佳為1%以上,更佳為10%以上。
又,於本發明的方法中,在含水蒸氣的氣氛下進行煅燒時,以體積為基準,較佳為0.1%以上,更佳為1%以上。於本發明中,特佳為在含氧和水蒸氣的混合氣體氣氛下進行煅燒。
煅燒溫度必須在聚矽氮烷化合物能轉換為二氧化矽質膜中的溫度進行。通常為在100~1,200℃、較佳300~1,000℃進行煅燒。
此處,煅燒溫度愈低,則與習知的製法比較下,平帶轉移改良效果係有愈顯著的傾向。煅燒溫度愈高,則平帶轉移愈小,而有得到具有優良電氣特性的二氧化矽質膜之傾向。
煅燒時間係可對應於煅燒溫度而作適當的選擇,通常為5分鐘~10小時。此處,從製造時的生產效率之觀點看,較佳為1小時以下。
本發明的製法所製造的二氧化矽質膜係平帶轉移值小。推測該特性係由於在所形成的二氧化矽質膜中衍生自鋁化合物的氧化鋁均質分散之故。因此,本發明的二氧化矽質膜係電氣特性例如絕緣特性優良的。
本發明的二氧化矽質膜及附有二氧化矽質膜的基板例如可由上述方法所製造。通常,在上述二氧化矽質膜的製造中,作為原料所使的鋁化合物中之鋁原子與聚矽氮烷化合物中所含有的矽原子之比率係於最終所得到的二氧化矽質膜中也沒有改變。因此,於製造時所用的鋁化合物中,使相對於矽原子,鋁原子的比率為10ppb至100ppm,而能製造本發明的二氧化矽質膜。又,於上述方法中,例如為了形成鋁含量少的二氧化矽質膜,對於該二氧化矽質膜藉由另外的手段,例如離子注入等,而將鋁原子導入膜中,使最終的鋁含量成為10ppb至100ppm。
該等二氧化矽質膜或附有二氧化矽質膜的基板係電氣特性優良,可用於各種半導體元件,例如元件分離膜、預金屬介電膜或間金屬介電膜等的層間絕緣膜、液晶等顯示裝置的閘絕緣膜。
準備一種於內容積2升的四口燒瓶中裝有氣體吹入管、磁攪拌器、杜瓦冷凝器而成的反應器。用乾燥的氮氣置換該反應器內部後,將1500毫升乾燥的吡啶導入四口燒瓶內,將其冰冷。其次,在吡啶中加入100克二氯矽烷,而生成白色固體狀的加成物(SiH2
Cl2
.2C5
H5
N)。再將該反應混合物冰冷,邊攪拌邊將70克氨氣吹入反應混合物中。接著將乾燥的氮氣吹入反應混合物中歷30分鐘,以去除剩餘的氨氣。
使用布氏漏斗,在乾燥的氮氣氛下減壓濾過所得到的反應混合物,得到1200毫升濾液。藉由蒸發器從濾液蒸餾去除吡啶,而得到40克全氫聚矽氮烷。
以CDCl3
當作展開液,藉由凝膠滲透層析術來測定所得到的全氫聚矽氮烷,以聚乙烯換算的數量平均分子量為800。又,藉由紅外線吸收光譜來測定該全氫聚矽氮烷,觀測到有基於波數(cm-1
)3350及1180的N-H鍵之吸收、基於2170的Si-H鍵之吸收、基於1020~820的Si-N-Si鍵之吸收。
將20克參考合成例1所調製的全氫聚矽氮烷溶解在80克經分子篩所脫水的二丁基醚中,以過濾精度0.1μm的ADVANTEC公司製PTFE注射筒式過濾器來過濾它。
於直徑8吋的p型矽晶圓上,準備成膜有10nm的熱氧化膜之基板,於其上使用旋塗機在主旋轉為1000rpm/20秒的條件下塗佈上述聚矽氮烷溶液。塗佈後,將該基板在加熱板上以150℃/3分鐘加熱而使乾燥。接著將該基板加熱,以形成膜厚500nm的二氧化矽質膜。加熱條件係如下。
加熱條件1:水蒸氣濃度80體積%、氧濃度20體積%的氣氛下,400℃加熱15分鐘。
加熱條件2:水蒸氣濃度80體積%、氧濃度20體積%的氣氛下,800℃加熱15分鐘。
加熱條件3:水蒸氣濃度80體積%、氧濃度20體積%的氣氛下,400℃加熱15分鐘後,再於乾燥的氮氣氛下在800℃加熱30分鐘。
加熱條件4:氮氣氛下,400℃加熱30分鐘。
對所得到的各基板,進行平帶轉移的測定。首先,藉由橢圓計(J.A.Woolam公司製Model-M44)來確認各基板的膜厚為500nm,再使用自動水銀探針CV/I V測定裝置(日本ASM株式會社製SSM495型),測定CV曲線及基於其的平帶轉移值。CV測定的外加電壓係在-100~+100V的範圍。
對於高密度電漿CVD膜,與比較例1同樣地作以測定平帶轉移值。
使1克三(異丙氧基)鋁1g混合100克經脫水的二丁基醚,以得到三(異丙氧基)鋁溶液。
將20克參考合成例1所調製的全氫聚矽氮烷溶解在80克經分子篩所脫水的二丁基醚中。於此溶液中加入27毫克上述含三(異丙氧基)鋁的鋁化合物溶液,以過濾精度0.1μm的ADVANTEC公司製PTFE注射筒式過濾器來過濾該混合溶液。
使用此混合溶液,與比較例1同樣地作以測定平帶轉移值。
將三(異丙氧基)鋁換成三(乙醯丙酮基)鋁,將鋁化合物
溶液的添加量換成43毫克,以外係與實施例1同樣地測定平帶轉移值。
將三(異丙氧基)鋁換成(乙基乙醯丙酮基)二(異丙氧基)鋁,將鋁化合物溶液的添加量換成34毫克,以外係與實施例1同樣地測定平帶轉移值。
將三(異丙氧基)鋁換成三(乙醯丙酮基)鋁,將鋁化合物溶液的添加量換成56毫克,以外係與實施例1同樣地測定平帶轉移值。
將三(異丙氧基)鋁換成氯化鋁,將鋁化合物溶液的添加量換成18毫克,以外係與實施例1同樣地測定平帶轉移值。
將三(異丙氧基)鋁換成二-s-鋁氧基三乙氧基矽烷,將鋁化合物溶液的添加量換成47毫克,以外係與實施例1同樣地測定平帶轉移值。
將溶解於二丁基醚中的三(異丙氧基)鋁之量換成0.001克,以外係與實施例1同樣地測定平帶轉移值。
將添加於聚矽氮烷溶液中的三(異丙氧基)鋁溶液之量換成2.7克,以外係與實施例1同樣地測定平帶轉移值。
使10克甲醇與脫水過的90克二丁基醚混合,良好地溶解。取10克該溶液,邊攪拌邊徐徐添加到100克比較例1所調製的全氫聚矽氮烷溶液中。將此混合溶液在氮氣氛中於80℃加熱1小時後,放置冷卻。得到由此反應經乙醇所變性的變性全氫聚矽氮烷溶液。
除了使用此變性全氫聚矽氮烷溶液,以外係與實施例1同樣地測定平帶轉移值。
下表中顯示由比較例1~2及實施例1~6所得到的結果。
而且,於實施例1及4中,藉由二次離子質量分析計(Physical Electronics公司製6650型)及觸針式表面形狀測定器(SLDAN公司製DEKTAK8000型)來測定各煅燒條件所得到的二氧化矽質膜之鋁含量時,測得與塗布液幾乎一致的鋁含量,塗料組成物的鋁含量係與使用該塗料組成物所製造的二氧化矽質膜中的鋁含量成一致。又,鋁含量在二氧化矽質膜的厚度方向係固定的,二氧化矽質膜中鋁原子係均勻分佈著。
本發明之製法能實現平帶轉移值小的二氧化矽質膜,即絕緣特性優良的二氧化矽質膜。由此製法所製造的二氧化矽質膜係可利用於半導體元件,例如元件分離膜、預金屬介電膜或間金屬介電膜等的層間絕緣膜、液晶等顯示裝置的閘絕緣膜等。
Claims (9)
- 一種塗料組成物,其包含經乙醇變性的變性全氫聚矽氮烷、鋁化合物及溶劑,其中鋁含量就相對於該聚矽氮烷化合物中所有的矽原子而言,以鋁原子的莫耳比計係10ppb以上、10ppm以下。
- 如申請專利範圍第1項之塗料組成物,其中該鋁化合物係為下述通式(A)所示者,Al(Z1 )(Z2 )(Z3 ) (A)其中Z1 、Z2 及Z3 係各獨立地為由氫、羥基、鹵素原子、烷基、環烷基、芳基、烯基、環烯基、烷氧基、乙醯丙酮基所選出的基,Z1 、Z2 及Z3 中的2個或3個可形成環狀構造,Z1 、Z2 及Z3 可為含矽的有機基。
- 如申請專利範圍第1項之塗料組成物,其中該鋁化合物係為下述通式(A)所示者,Al(Z1 )(Z2 )(Z3 ) (A)其中Z1 、Z2 及Z3 係各獨立地為由氫、羥基、鹵素原子、烷基、環烷基、芳基、烯基、環烯基、烷氧基、乙醯丙酮基所選出的基,Z1 、Z2 及Z3 中的2個或3個可形成環狀構造,Z1 、Z2 及Z3 可為含矽的有機基。
- 如申請專利範圍第1至3項中任一項之塗料組成物,其中該組成物的鋁含量就相對於該聚矽氮烷化合物中所含有的矽原子而言,以鋁原子的莫耳比計係100ppb以上、10ppm 以下。
- 一種二氧化矽質膜之製法,其特徵為將包含如申請專利範圍第1項之塗料組成物的塗布液塗佈在基板上,於含水蒸氣、氧或它們的混合氣體之氣氛中進行煅燒。
- 如申請專利範圍第5項之二氧化矽質膜之製法,其中在含氧或是氧與水蒸氣的混合氣體之環境下進行煅燒。
- 一種二氧化矽質膜,其係由如申請專利範圍第5或6項之方法所製造。
- 一種附有二氧化矽質膜的基板,其係由在基板表面的至少一側具備由如申請專利範圍第5或6項之方法所製造的二氧化矽質膜而成。
- 如申請專利範圍第8項之附有二氧化矽質膜的基板,其中該二氧化矽質膜係元件分離膜、層間絕緣膜或閘絕緣膜。
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