TW503472B - Epitaxial silicon wafer - Google Patents

Epitaxial silicon wafer Download PDF

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Publication number
TW503472B
TW503472B TW089116434A TW89116434A TW503472B TW 503472 B TW503472 B TW 503472B TW 089116434 A TW089116434 A TW 089116434A TW 89116434 A TW89116434 A TW 89116434A TW 503472 B TW503472 B TW 503472B
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TW
Taiwan
Prior art keywords
concentration
atoms
nitrogen
oxygen concentration
silicon wafer
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Application number
TW089116434A
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English (en)
Inventor
Satoshi Komiya
Shiro Yoshino
Masayoshi Danbata
Kouichirou Hayashida
Original Assignee
Komatsu Denshi Kinzoku Kk
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Publication of TW503472B publication Critical patent/TW503472B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

503472 五、發明說明（5) 最初拉引部分（肩部部分）開始至終端（尾部部 增，另一方面氧濃度為漸減。 ^為止漸 因此，於取得製品s象區域中顯示最冑氮 最終端之部分中，將該氮濃度以前述氮濃度之=直胴π 定，則可使得矽塊錠全體中的氮濃度為未滿3 χ i(j^予以設 atoms/cm3，並且對應於此矽塊錠中氮濃度之微 控制氧濃度，令氧濃度，氮濃度為在上述（6 )所厂、而適田 内，使得拉引之矽塊錠的直胴部分並未形成多^範^ 作成該直胴部分之全部可普遍使用作為象4^ 的矽塊錠。 ， 勹侍對象製品區域 於此情形中，若與氮濃度相比，則氧濃度可較 定’故令石夕塊錠直胴部分幾乎全部可作為石夕 ：、= 象區域、作成直胴部可有效率使用之石夕塊鍵地 ^對 度，或者，配合所得底材晶圓之氧濃度、_ /乳展 制氧濃度即可。 U之氧，辰纟L辰度地適當控 實驗例為將各種條件所育成iCZ_Si單結晶中切 圓，並於施以鏡面研磨加工後施以磊晶成長，且 曰曰曰 基板的氧析出舉動及磊晶表層的缺陷。 一猫曰曰 於此只驗例中，結晶為添加硼作為摻雜物之直秤 、二型、結晶方位<100>，，且氧濃度控制則χΐ〇ΐ7 χ 二toms/cm3，並且添加氮令氮濃度為4. g χ 1 〇ΐ3 -1·24χ 1(P at〇ms/cm3，且比較例為準備未添加氮之社 曰曰 _ 晶成長為以三氯矽烷作為成長氣體、成長溫度為° 1100 c、磊晶膜厚為6 。
503472 五、發明說明（6) 結果示於圖3及圖4。圖3為判定筒、、曲 LPD型式被觀察到的缺陷數/關你^ /辰又與缺陷發生數（以 、旧数）之關係，圖4盔 據，判定氮濃度與氧濃度之關係。 馮板據相同數 首先，由圖3得知“形 亦不會令缺陷數更為増大，於氧濃 y吏亂浪度較高 度變高則缺陷數目變多。因此，由此圖3提月:出中气’，，氮濃 之情形中，則必須降低氮濃度，於 ^出^辰度高 有指定的相關關係。 辰&風^辰度之間具 又，由圖4，若將氧灑疮你曲 軸，則可得知氧濃度與氮"；農'^Ύ描繪於橫轴和縱 此處，是否適於作為指ί的相關關係。 ΛΑΤ on 1 〇 I⑽之界限’若以每2〇〇mm之晶圓 HPD數（0· 12 //m以上）為2〇個以下者為基準，則如圖4所 不將（氧濃度，氮濃度）=(7x 10n atoms/cm3，約3χ 1〇15 atoms/cmO 與（氧濃度，氮濃度）=(1·6>< 1〇18 at〇ms/cm3， 約3 X 1〇14 atoms/cm3)連結線（圖4中傾斜之實線）為界限 線。又，於設定作為製品之更嚴格基準之情形中，提示將 (氧濃度，氮濃度）=(7 X 1 017 a toms/cm3，約 1 X 1 〇15 atoms /(21113)與（氧濃度’氮濃度）=(15\1〇18 31：01113/€1113，約1\ 1 °14 a t oms/cm3)連結線（圖4中之點線）作為界限線。但， 其均為指在目前所得數據之範圍内，故對於數值可允許某 程度的偏差。 因此，由此圖4可知，為了作成製造矽磊晶晶圓所合適的 摻雜氮之底材矽晶圓，乃以實線左侧（更具體而言，氧濃度 為7 X 1 017 a toms/cm3 時之氮濃度為約 3 X 1 015 a toms/era3 以
89116434.ptd 第9頁 503472 圖式簡單說明 圖1為用以說明本發明者等人所發現之「丘狀缺陷」之 形狀圖。 圖2為用以說明伴隨結晶成長之矽塊錠中的氮濃度變化 與氧濃度變化圖。 圖3為示出描繪氮濃度與LPD (Light Point Defect)關 係之圖示。 圖4為示出描繪氮濃度與氧濃度關係之圖示。
89116434.ptd 第11頁

Claims (1)

  1. 503472 六、申請專利範圍 at〇ms/cm3以下、且氧濃度為15x 1〇〗8 at〇ms/cm3時之氮濃 度為約1 X 1 〇14 a toms/cm3以下之範圍内。 8 · 一種秒塊疑’其特徵為：直胴部最終端之氮濃度為在1 X 1〇15 at〇ms/cm3 至1〇15 atoms/cm3 之範圍内。 中HI ; Ϊ 2 :第8項之石夕塊疑’其中根據該石夕塊1定 中…度交化而適當控制該石夕塊鍵中的氧濃度。
    $ 13頁
TW089116434A 1999-08-27 2000-08-15 Epitaxial silicon wafer TW503472B (en)

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JP24118799A JP2001068477A (ja) 1999-08-27 1999-08-27 エピタキシャルシリコンウエハ

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US (2) US20040065250A1 (zh)
EP (1) EP1231301A4 (zh)
JP (1) JP2001068477A (zh)
KR (1) KR100753169B1 (zh)
TW (1) TW503472B (zh)
WO (1) WO2001016408A1 (zh)

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KR101045309B1 (ko) * 2004-02-03 2011-06-29 신에쯔 한도타이 가부시키가이샤 반도체 웨이퍼의 제조 방법 및 반도체 잉곳의 절단 위치결정 시스템
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Publication number Publication date
US20040065250A1 (en) 2004-04-08
JP2001068477A (ja) 2001-03-16
EP1231301A4 (en) 2008-12-17
KR100753169B1 (ko) 2007-08-30
WO2001016408A1 (fr) 2001-03-08
US20070113778A1 (en) 2007-05-24
EP1231301A1 (en) 2002-08-14
KR20020026567A (ko) 2002-04-10

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