TW376531B - Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density - Google Patents

Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density

Info

Publication number
TW376531B
TW376531B TW086115445A TW86115445A TW376531B TW 376531 B TW376531 B TW 376531B TW 086115445 A TW086115445 A TW 086115445A TW 86115445 A TW86115445 A TW 86115445A TW 376531 B TW376531 B TW 376531B
Authority
TW
Taiwan
Prior art keywords
ceiling
ion density
reactor
radial distribution
parallel
Prior art date
Application number
TW086115445A
Other languages
English (en)
Inventor
Kenneth Collins
Michael Rice
John Trow
Douglas Buchberger
Eric Askarinam
Tsui Joshua
Groechel David
Hung Raymond
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW376531B publication Critical patent/TW376531B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
TW086115445A 1996-10-24 1997-10-20 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density TW376531B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/740,124 US6054013A (en) 1996-02-02 1996-10-24 Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density

Publications (1)

Publication Number Publication Date
TW376531B true TW376531B (en) 1999-12-11

Family

ID=24975149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115445A TW376531B (en) 1996-10-24 1997-10-20 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density

Country Status (5)

Country Link
US (2) US6054013A (zh)
EP (1) EP0838843A3 (zh)
JP (1) JPH10189296A (zh)
KR (1) KR19980033120A (zh)
TW (1) TW376531B (zh)

Cited By (11)

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TWI382448B (zh) * 2003-07-14 2013-01-11 Jusung Eng Co Ltd 使用混合耦合電漿之裝置
TWI398926B (zh) * 2006-04-25 2013-06-11 Gen Co Ltd 具有與磁通通道耦合之電漿室的電漿反應器
TWI451468B (zh) * 2007-03-30 2014-09-01 Lam Res Corp 處理基板之方法
TWI468082B (zh) * 2007-09-27 2015-01-01 蘭姆研究公司 用於混合電容耦合及感應耦合電漿處理系統之方法與設備
TWI505753B (zh) * 2009-01-14 2015-10-21 Tokyo Electron Ltd Inductively Coupled Plasma Processing Unit
TWI581673B (zh) * 2011-09-13 2017-05-01
TWI603652B (zh) * 2012-07-20 2017-10-21 應用材料股份有限公司 用於改良後的射頻偏壓信號穩定之高頻濾波器
TWI611457B (zh) * 2015-09-17 2018-01-11 中微半導體設備（上海）有限公司 電漿處理設備、其清洗系統以及控制方法
CN107946162A (zh) * 2016-10-13 2018-04-20 Ap***股份有限公司 衬底处理设备
TWI709995B (zh) * 2015-09-28 2020-11-11 美商應用材料股份有限公司 以電漿點源之陣列處理工件的電漿反應器
TWI758939B (zh) * 2020-11-06 2022-03-21 台灣積體電路製造股份有限公司 感應耦合電漿設備及其操作方法

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