ES2040914T3 - Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares. - Google Patents
Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares.Info
- Publication number
- ES2040914T3 ES2040914T3 ES198989104129T ES89104129T ES2040914T3 ES 2040914 T3 ES2040914 T3 ES 2040914T3 ES 198989104129 T ES198989104129 T ES 198989104129T ES 89104129 T ES89104129 T ES 89104129T ES 2040914 T3 ES2040914 T3 ES 2040914T3
- Authority
- ES
- Spain
- Prior art keywords
- solar cells
- silicon
- efflux
- elaboration
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Abstract
LA SEPARACION A PARTIR DE LA FASE GASEOSA EN LA QUE SE EXCITA EL COMPUESTO CON EL MATERIAL A SEPARAR COMO GAS DE PROCESO EN UN REACTOR (1) ENTRE ELECTRODOS (8, 6) EN UN PLASMA DE DESCARGA DE GAS (17,7) Y SE APLICAN COMO CAPAS SOLIDAS SOBRE LOS ELECTRODOS O SOBRE LOS SUSTRATOS SITUADOS ALLI (9), TIENE LUGAR DE FORMA QUE EL GAS DE PROCESO SE EXCITA POR EXCITACION INDUCTIVA DE ALTA FRECUENCIA (17) CON UN CAMPO MAGNETICO DEBIL CONSTANTE SUPERPUESTO (15,16), DE FORMA QUE SURJA UNA RESONANCIA DE ONDA ELECTRON-CICLOTRON Y SE IONIZE ALTAMENTE EL GAS DE PROCESO. SE OBTIENEN EN ESPECIAL CAPAS AMORFAS DE SILICIO-GERMANIO CON HIDROGENO Y/O FLUOR, CARACTERIZADAS POR UN REDUCIDO GROSOR DE ESTADO Y RESULTAN ESPECIALMENTE ADECUADAS PARA CELULAS SOLARES TANDEM DE CAPAS FINAS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3810021 | 1988-03-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2040914T3 true ES2040914T3 (es) | 1993-11-01 |
Family
ID=6350618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES198989104129T Expired - Lifetime ES2040914T3 (es) | 1988-03-24 | 1989-03-08 | Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4948750A (es) |
EP (1) | EP0334109B1 (es) |
JP (1) | JPH0210720A (es) |
DE (1) | DE58904540D1 (es) |
ES (1) | ES2040914T3 (es) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5187115A (en) * | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
IT1227877B (it) * | 1988-11-25 | 1991-05-14 | Eniricerche S P A Agip S P A | Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile |
US5421891A (en) * | 1989-06-13 | 1995-06-06 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5122251A (en) * | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
JP3056772B2 (ja) * | 1990-08-20 | 2000-06-26 | 株式会社日立製作所 | プラズマの制御方法ならびにプラズマ処理方法およびその装置 |
US20010054601A1 (en) * | 1996-05-13 | 2001-12-27 | Jian Ding | Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material |
US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5332441A (en) * | 1991-10-31 | 1994-07-26 | International Business Machines Corporation | Apparatus for gettering of particles during plasma processing |
US5521108A (en) * | 1993-09-15 | 1996-05-28 | Lsi Logic Corporation | Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure |
US5849372A (en) * | 1993-09-17 | 1998-12-15 | Isis Innovation Limited | RF plasma reactor and methods of generating RF plasma |
US5460693A (en) * | 1994-05-31 | 1995-10-24 | Texas Instruments Incorporated | Dry microlithography process |
GB9418658D0 (en) * | 1994-09-16 | 1994-11-02 | Central Research Lab Ltd | An apparatus for generating a glow discharge |
DE4443608C1 (de) * | 1994-12-07 | 1996-03-21 | Siemens Ag | Plasmareaktor und Verfahren zu dessen Betrieb |
TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
US6036878A (en) | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
DE19645912C1 (de) * | 1996-11-07 | 1997-08-28 | Dresden Ev Inst Festkoerper | Plasma-CVD-Reaktor |
US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
US6589437B1 (en) | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
CN1460130A (zh) * | 1999-11-19 | 2003-12-03 | 纳米表面***公司 | 无机/有机介电薄膜的沉积***及方法 |
US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
US20090014423A1 (en) * | 2007-07-10 | 2009-01-15 | Xuegeng Li | Concentric flow-through plasma reactor and methods therefor |
WO2008143716A2 (en) * | 2007-01-22 | 2008-11-27 | Innovalight, Inc. | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
US8471170B2 (en) | 2007-07-10 | 2013-06-25 | Innovalight, Inc. | Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor |
US8968438B2 (en) * | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
FR2922358B1 (fr) * | 2007-10-16 | 2013-02-01 | Hydromecanique & Frottement | Procede de traitement de surface d'au moins une piece au moyen de sources elementaires de plasma par resonance cyclotronique electronique |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2904171A1 (de) * | 1979-02-05 | 1980-08-14 | Siemens Ag | Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung |
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
JPH0635323B2 (ja) * | 1982-06-25 | 1994-05-11 | 株式会社日立製作所 | 表面処理方法 |
US4521447A (en) * | 1982-10-18 | 1985-06-04 | Sovonics Solar Systems | Method and apparatus for making layered amorphous semiconductor alloys using microwave energy |
US4583492A (en) * | 1983-12-19 | 1986-04-22 | United Technologies Corporation | High rate, low temperature silicon deposition system |
DE3533146A1 (de) * | 1985-09-17 | 1987-03-26 | Siemens Ag | Farbsensorelement, farbempfindliche sensoranordnung mit derartigen farbsensorelementen, eine anwendung des elements oder der anordnung und ein verfahren zur herstellung eines halbleitermaterials fuer das farbsensorelement |
KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
US4686113A (en) * | 1985-12-18 | 1987-08-11 | Fairchild Semiconductor Corporation | Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method |
US4760008A (en) * | 1986-01-24 | 1988-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrophotographic photosensitive members and methods for manufacturing the same using microwave radiation in magnetic field |
US4859908A (en) * | 1986-09-24 | 1989-08-22 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus for large area ion irradiation |
JPH0676666B2 (ja) * | 1987-02-10 | 1994-09-28 | 株式会社半導体エネルギ−研究所 | 炭素膜作製方法 |
-
1989
- 1989-03-08 DE DE8989104129T patent/DE58904540D1/de not_active Expired - Fee Related
- 1989-03-08 ES ES198989104129T patent/ES2040914T3/es not_active Expired - Lifetime
- 1989-03-08 EP EP89104129A patent/EP0334109B1/de not_active Expired - Lifetime
- 1989-03-13 US US07/322,117 patent/US4948750A/en not_active Expired - Fee Related
- 1989-03-23 JP JP1071606A patent/JPH0210720A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0334109B1 (de) | 1993-06-02 |
DE58904540D1 (de) | 1993-07-08 |
US4948750A (en) | 1990-08-14 |
JPH0210720A (ja) | 1990-01-16 |
EP0334109A1 (de) | 1989-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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