TW286401B - - Google Patents

Info

Publication number
TW286401B
TW286401B TW084111506A TW84111506A TW286401B TW 286401 B TW286401 B TW 286401B TW 084111506 A TW084111506 A TW 084111506A TW 84111506 A TW84111506 A TW 84111506A TW 286401 B TW286401 B TW 286401B
Authority
TW
Taiwan
Application number
TW084111506A
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of TW286401B publication Critical patent/TW286401B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
TW084111506A 1994-10-04 1995-11-01 TW286401B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94202867 1994-10-04

Publications (1)

Publication Number Publication Date
TW286401B true TW286401B (zh) 1996-09-21

Family

ID=8217255

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111506A TW286401B (zh) 1994-10-04 1995-11-01

Country Status (9)

Country Link
US (2) US5744832A (zh)
EP (1) EP0737364B1 (zh)
JP (1) JP3804972B2 (zh)
KR (1) KR100342296B1 (zh)
CA (1) CA2178091A1 (zh)
DE (1) DE69508737T2 (zh)
MX (1) MX9602406A (zh)
TW (1) TW286401B (zh)
WO (1) WO1996010845A2 (zh)

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JP2830845B2 (ja) * 1996-06-26 1998-12-02 日本電気株式会社 半導体記憶装置
DE19640243A1 (de) * 1996-09-30 1998-04-09 Siemens Ag Kondensator mit einer Sauerstoff-Barriereschicht und einer ersten Elektrode aus einem Nichtedelmetall
US5790366A (en) * 1996-12-06 1998-08-04 Sharp Kabushiki Kaisha High temperature electrode-barriers for ferroelectric and other capacitor structures
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US6075264A (en) 1999-01-25 2000-06-13 Samsung Electronics Co., Ltd. Structure of a ferroelectric memory cell and method of fabricating it
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JP3681632B2 (ja) * 2000-11-06 2005-08-10 松下電器産業株式会社 半導体装置及びその製造方法
DE10061580A1 (de) * 2000-12-11 2002-06-27 Infineon Technologies Ag Speichereinrichtung und Verfahren zu deren Betrieb
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
KR100410716B1 (ko) * 2001-03-07 2003-12-18 주식회사 하이닉스반도체 캐패시터의 하부전극을 스토리지노드와 연결할 수 있는강유전체 메모리 소자 및 그 제조 방법
KR20030025671A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 커패시터의 제조방법
KR100431294B1 (ko) * 2001-10-06 2004-05-12 주식회사 하이닉스반도체 반도체소자 제조방법
KR100432882B1 (ko) * 2001-10-12 2004-05-22 삼성전자주식회사 강유전성 메모리 장치 형성 방법
EP1324392B1 (en) * 2001-12-28 2009-12-09 STMicroelectronics S.r.l. Capacitor for semiconductor integrated devices
US6583507B1 (en) * 2002-04-26 2003-06-24 Bum Ki Moon Barrier for capacitor over plug structures
JP3894554B2 (ja) * 2002-08-07 2007-03-22 松下電器産業株式会社 容量素子及びその製造方法
KR100474072B1 (ko) * 2002-09-17 2005-03-10 주식회사 하이닉스반도체 귀금속 박막의 형성 방법
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
US7297602B2 (en) * 2003-09-09 2007-11-20 Sharp Laboratories Of America, Inc. Conductive metal oxide gate ferroelectric memory transistor
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
US7109079B2 (en) * 2005-01-26 2006-09-19 Freescale Semiconductor, Inc. Metal gate transistor CMOS process and method for making
KR100707783B1 (ko) * 2005-10-10 2007-04-17 삼성전기주식회사 컬러 휠 유니트 및 그 제작 방법
US9299643B2 (en) * 2008-09-29 2016-03-29 Cypress Semiconductor Corporation Ruthenium interconnect with high aspect ratio and method of fabrication thereof
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9548348B2 (en) * 2013-06-27 2017-01-17 Cypress Semiconductor Corporation Methods of fabricating an F-RAM
CN104600073B (zh) * 2013-10-30 2017-06-06 上海华虹宏力半导体制造有限公司 Otp器件及制造方法
CN104576648B (zh) * 2014-08-19 2017-03-29 上海华虹宏力半导体制造有限公司 Otp器件及其制造方法
JP6805674B2 (ja) * 2016-09-21 2020-12-23 豊田合成株式会社 発光素子及びその製造方法
KR20190008047A (ko) 2017-07-14 2019-01-23 에스케이하이닉스 주식회사 강유전성 메모리 소자
US10411017B2 (en) * 2017-08-31 2019-09-10 Micron Technology, Inc. Multi-component conductive structures for semiconductor devices

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JPH03256691A (ja) * 1990-03-08 1991-11-15 Fanuc Ltd 産業用ロボットに於ける旋回軸のケーブル処理構造
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DE69404189T2 (de) * 1993-03-31 1998-01-08 Texas Instruments Inc Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
JPH0793969A (ja) * 1993-09-22 1995-04-07 Olympus Optical Co Ltd 強誘電体容量素子
JPH07312365A (ja) * 1994-05-17 1995-11-28 Hitachi Ltd 半導体装置の製造方法
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
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JPH0864767A (ja) * 1994-08-23 1996-03-08 Olympus Optical Co Ltd 半導体装置
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US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Also Published As

Publication number Publication date
KR100342296B1 (ko) 2002-11-29
JPH09507342A (ja) 1997-07-22
DE69508737T2 (de) 1999-10-07
EP0737364B1 (en) 1999-03-31
WO1996010845A2 (en) 1996-04-11
EP0737364A1 (en) 1996-10-16
DE69508737D1 (de) 1999-05-06
CA2178091A1 (en) 1996-04-11
KR970702585A (ko) 1997-05-13
WO1996010845A3 (en) 1996-06-06
US5744832A (en) 1998-04-28
MX9602406A (es) 1997-03-29
US6140173A (en) 2000-10-31
JP3804972B2 (ja) 2006-08-02

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