JP6805674B2 - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 65
- 238000010438 heat treatment Methods 0.000 claims description 34
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 229910002704 AlGaN Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Description
図1は、実施の形態に係る発光素子1の垂直断面図である。発光素子1は、基板10と、基板10上のn型半導体層11と、n型半導体層11上の発光層12と、発光層12上のp型半導体層13と、p型半導体層13上の透明電極14と、透明電極14の上面及び側面を覆うDBR(distributed Bragg reflector)膜15と、n型半導体層11に接続されたnコンタクト電極16と、DBR膜15上に形成され、p型半導体層13に接続されるpコンタクト電極17と、nコンタクト電極16に接続されたn配線電極18と、pコンタクト電極17に接続されたp配線電極19と、n配線電極18に接続されたnパッド電極20と、p配線電極19に接続されたpパッド電極21と、を有する。
次の表1〜3は、nコンタクト電極16のTi層の膜厚と発光素子1の順方向電圧VFとの関係を示す。表1はnコンタクト電極16の形成後の熱処理を行う前の順方向電圧VF、表2は315℃の熱処理を行った後の順方向電圧VF、表3は575℃の熱処理を行った後の順方向電圧VFをそれぞれ示す。
図3(a)は、nコンタクト電極16のTi層の成膜レートと発光素子1の熱処理前後の順方向電圧差ΔVFとの関係を示すグラフである。ここで、ΔVFは熱処理前の順方向電圧VFと575℃の熱処理後の順方向電圧VFとの差をいう。
次の表5は、nコンタクト電極16のRu層の反射率とスパッタリング条件との関係を示す。表5の「ガス圧」、「出力」、「T−S距離」は、それぞれスパッタリングガス圧、スパッタリング出力、ターゲット−基板間距離を意味する。
図6(a)は、Ru層、Pt層、Rh層の反射率を比較したグラフである。図6(a)には、Ti/Ru/Au積層膜、Ti/Pt/Au積層膜、及びTi/Rh/Au積層膜の反射率が示されている。各積層膜中のTi層の膜厚は2nm、Au層の膜厚は500nm、Ru層、Pt層、及びRh層の膜厚は100nmである。
11 n型半導体層
12 発光層
13 p型半導体層
15 DBR膜
16 nコンタクト電極
17 pコンタクト電極
Claims (5)
- ガラス封止される発光素子の製造方法であって、
基板上に、n型クラッド層を含む、AlxGa1−xN(0.1≦x≦1)を主成分とするn型半導体層を形成する工程と、
前記n型半導体層上に発光層を形成する工程と、
前記発光層上にAlGaNを主成分とするp型半導体層を形成する工程と、
Ti層とRu層の積層構造を含み、前記Ti層が前記発光層及び前記p型半導体層の一部が除去されることにより露出した前記n型半導体層に接触するnコンタクト電極を形成する工程と、
Ti層とRu層の積層構造を含み、前記p型半導体層に接触するpコンタクト電極を形成する工程と、
熱処理により前記n型半導体層と前記Ti層とをオーミック接触させる工程と、
Ru層を含む積層構造を有し、前記pコンタクト電極に接続されるp配線電極を形成する工程と、
Ru層を含む積層構造を有し、前記nコンタクト電極に接続されるn配線電極を形成する工程と、
Ru層を含む積層構造を有し、前記p配線電極に接続されるpパッド電極を形成する工程と、
Ru層を含む積層構造を有し、前記n配線電極に接続されるnパッド電極を形成する工程と、
を含み、
前記nコンタクト電極の形成において、前記Ti層をRF電源を用いたスパッタリングにより形成し、前記Ru層をガス圧力が0.4Pa以下のスパッタリングにより形成する、発光素子の製造方法。 - 前記n型半導体層がAlxGa1−xN(x≧0.65)を主成分とする、
請求項1に記載の発光素子の製造方法。 - 前記Ti層の厚さが0.5nm以上かつ2.5nm以下である、
請求項1又は2に記載の発光素子の製造方法。 - 前記pコンタクト電極の形成を、前記nコンタクト電極と同時に形成する、
請求項1〜3のいずれか1項に記載の発光素子の製造方法。 - 前記ガラス封止を、屈伏点500℃以上のガラスで行う、
請求項1〜4のいずれか1項に記載の発光素子の製造方法。
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CN201710755921.2A CN107863430B (zh) | 2016-09-21 | 2017-08-29 | 发光元件及其制造方法 |
US15/705,135 US10644204B2 (en) | 2016-09-21 | 2017-09-14 | Light emitting element including contact electrode with laminate structure, and method of manufacturing the same |
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JP7296001B2 (ja) * | 2018-10-17 | 2023-06-21 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6780083B1 (ja) * | 2019-06-11 | 2020-11-04 | 日機装株式会社 | 半導体発光素子 |
JP7318565B2 (ja) * | 2020-03-03 | 2023-08-01 | 信越化学工業株式会社 | 反射型マスクブランクの製造方法 |
CN111969088A (zh) * | 2020-08-31 | 2020-11-20 | 福建兆元光电有限公司 | 一种Mini LED芯片结构及其制造方法 |
CN113451476B (zh) * | 2021-07-01 | 2022-09-16 | 厦门乾照光电股份有限公司 | 一种微型发光元件及其制备方法 |
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