MX9602406A - Mecanismo semiconductor que comprende un elemento de memoria ferroelectrica con un electrodo inferior provisto de una barrera de oxigeno. - Google Patents
Mecanismo semiconductor que comprende un elemento de memoria ferroelectrica con un electrodo inferior provisto de una barrera de oxigeno.Info
- Publication number
- MX9602406A MX9602406A MX9602406A MX9602406A MX9602406A MX 9602406 A MX9602406 A MX 9602406A MX 9602406 A MX9602406 A MX 9602406A MX 9602406 A MX9602406 A MX 9602406A MX 9602406 A MX9602406 A MX 9602406A
- Authority
- MX
- Mexico
- Prior art keywords
- layer
- lower electrode
- semiconductor device
- metal oxide
- conductive metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 title abstract 2
- 229910052760 oxygen Inorganic materials 0.000 title abstract 2
- 239000001301 oxygen Substances 0.000 title abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 7
- 150000004706 metal oxides Chemical class 0.000 abstract 6
- 229910044991 metal oxide Inorganic materials 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 229910052697 platinum Inorganic materials 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
La invencion se refiere a un mecanismo semiconductor que comprende un cuerpo semiconductor (3) con un elemento semiconductor (1) con una region de conduccion eléctrica (5) sobre la cual un capacitor (2) que forma un elemento de memoria está presente con un electrodo inferior (11), un dieléctrico ferroeléctrico de oxido (12), y un electrodo superior (13), cuyo electrodo inferior (11) hace contacto eléctrico con la region de conduccion (5) y comprende una capa con un oxido de metal conductor (112) y una capa (111) que comprende platino. La capa con el oxido de metal conductor (112) actua como una barrera de oxígeno durante la fabricacion. La invencion también se refiere a un método de fabricacion de tal mecanismo semiconductor. De acuerdo con la invencion, el mecanismo se caracteriza porque dicha capa que comprende platino (111) contiene más de 15% atom de un metal capaz de formar un oxido de metal conductor, y en que la capa (112) con el oxido de metal conductor está presente entre la capa (111) que comprende platino y el dieléctrico ferroeléctrico (12). Así se logra un buen contacto eléctrico entre el electrodo inferior (11) y la region de conduccion (5) después de la fabricacion.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94202867 | 1994-10-04 | ||
PCT/IB1995/000799 WO1996010845A2 (en) | 1994-10-04 | 1995-09-26 | Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9602406A true MX9602406A (es) | 1997-03-29 |
Family
ID=8217255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9602406A MX9602406A (es) | 1994-10-04 | 1995-09-26 | Mecanismo semiconductor que comprende un elemento de memoria ferroelectrica con un electrodo inferior provisto de una barrera de oxigeno. |
Country Status (9)
Country | Link |
---|---|
US (2) | US5744832A (es) |
EP (1) | EP0737364B1 (es) |
JP (1) | JP3804972B2 (es) |
KR (1) | KR100342296B1 (es) |
CA (1) | CA2178091A1 (es) |
DE (1) | DE69508737T2 (es) |
MX (1) | MX9602406A (es) |
TW (1) | TW286401B (es) |
WO (1) | WO1996010845A2 (es) |
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KR100200299B1 (ko) * | 1995-11-30 | 1999-06-15 | 김영환 | 반도체 소자 캐패시터 형성방법 |
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KR100410716B1 (ko) * | 2001-03-07 | 2003-12-18 | 주식회사 하이닉스반도체 | 캐패시터의 하부전극을 스토리지노드와 연결할 수 있는강유전체 메모리 소자 및 그 제조 방법 |
KR20030025671A (ko) * | 2001-09-22 | 2003-03-29 | 주식회사 하이닉스반도체 | 커패시터의 제조방법 |
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KR100707783B1 (ko) * | 2005-10-10 | 2007-04-17 | 삼성전기주식회사 | 컬러 휠 유니트 및 그 제작 방법 |
US9299643B2 (en) * | 2008-09-29 | 2016-03-29 | Cypress Semiconductor Corporation | Ruthenium interconnect with high aspect ratio and method of fabrication thereof |
US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
US9548348B2 (en) * | 2013-06-27 | 2017-01-17 | Cypress Semiconductor Corporation | Methods of fabricating an F-RAM |
CN104600073B (zh) * | 2013-10-30 | 2017-06-06 | 上海华虹宏力半导体制造有限公司 | Otp器件及制造方法 |
CN104576648B (zh) * | 2014-08-19 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | Otp器件及其制造方法 |
JP6805674B2 (ja) * | 2016-09-21 | 2020-12-23 | 豊田合成株式会社 | 発光素子及びその製造方法 |
KR20190008047A (ko) | 2017-07-14 | 2019-01-23 | 에스케이하이닉스 주식회사 | 강유전성 메모리 소자 |
US10411017B2 (en) * | 2017-08-31 | 2019-09-10 | Micron Technology, Inc. | Multi-component conductive structures for semiconductor devices |
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-
1995
- 1995-09-26 KR KR1019960702917A patent/KR100342296B1/ko not_active IP Right Cessation
- 1995-09-26 CA CA002178091A patent/CA2178091A1/en not_active Abandoned
- 1995-09-26 WO PCT/IB1995/000799 patent/WO1996010845A2/en active IP Right Grant
- 1995-09-26 DE DE69508737T patent/DE69508737T2/de not_active Expired - Fee Related
- 1995-09-26 JP JP51156396A patent/JP3804972B2/ja not_active Expired - Fee Related
- 1995-09-26 MX MX9602406A patent/MX9602406A/es unknown
- 1995-09-26 EP EP95930695A patent/EP0737364B1/en not_active Expired - Lifetime
- 1995-10-03 US US08/538,515 patent/US5744832A/en not_active Expired - Fee Related
- 1995-11-01 TW TW084111506A patent/TW286401B/zh active
-
1998
- 1998-02-18 US US09/025,372 patent/US6140173A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100342296B1 (ko) | 2002-11-29 |
CA2178091A1 (en) | 1996-04-11 |
JPH09507342A (ja) | 1997-07-22 |
US5744832A (en) | 1998-04-28 |
DE69508737T2 (de) | 1999-10-07 |
KR970702585A (ko) | 1997-05-13 |
DE69508737D1 (de) | 1999-05-06 |
US6140173A (en) | 2000-10-31 |
EP0737364A1 (en) | 1996-10-16 |
JP3804972B2 (ja) | 2006-08-02 |
EP0737364B1 (en) | 1999-03-31 |
WO1996010845A3 (en) | 1996-06-06 |
WO1996010845A2 (en) | 1996-04-11 |
TW286401B (es) | 1996-09-21 |
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