JP2001516510A - 記憶コンデンサを持つ半導体装置及びこのような装置の製造方法 - Google Patents
記憶コンデンサを持つ半導体装置及びこのような装置の製造方法Info
- Publication number
- JP2001516510A JP2001516510A JP54209998A JP54209998A JP2001516510A JP 2001516510 A JP2001516510 A JP 2001516510A JP 54209998 A JP54209998 A JP 54209998A JP 54209998 A JP54209998 A JP 54209998A JP 2001516510 A JP2001516510 A JP 2001516510A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- deposited
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000003990 capacitor Substances 0.000 title claims abstract description 22
- 238000003860 storage Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 8
- 229910006990 Si1-xGex Inorganic materials 0.000 description 7
- 229910007020 Si1−xGex Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.誘電体操と上位電極が設けられ、半導体材料の半球形粒子で形成された粗面 を持つ層を有する下位電極を持つ記憶コンデンサが設けられた半導体基体を 持つ半導体装置において、下位電極が形成される半導体材料が0.2<x<1 のSi1-xGexであることを特徴とする半導体装置。 2.請求項1に記載の半導体装置において、 絶縁材料の層上に存在するポリクリスタリンシリコンの導体上に前記下位電極 が形成されることを特徴とする半導体装置。 3.請求項1に記載の半導体装置の製造方法において、 半導体基体が450℃乃至700℃の温度で加熱されるCVD法で0.2<x<1のS i1-xGexの層が堆積されることを特徴とする半導体装置の製造方法。 4.請求項2に記載の半導体装置の製造方法において、 半導体基体が500℃乃至600℃の温度で加熱されるCVD法で0.2<x<0.5のS i1-xGexの層が堆積されることを特徴とする半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97202105 | 1997-07-08 | ||
EP97202105.9 | 1997-07-08 | ||
PCT/IB1998/000754 WO1999003152A2 (en) | 1997-07-08 | 1998-05-18 | Semiconductor device with memory capacitor and method of manufacturing such a device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001516510A true JP2001516510A (ja) | 2001-09-25 |
JP2001516510A5 JP2001516510A5 (ja) | 2005-12-02 |
Family
ID=8228527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54209998A Ceased JP2001516510A (ja) | 1997-07-08 | 1998-05-18 | 記憶コンデンサを持つ半導体装置及びこのような装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6417536B2 (ja) |
EP (1) | EP0941552B1 (ja) |
JP (1) | JP2001516510A (ja) |
DE (1) | DE69841302D1 (ja) |
WO (1) | WO1999003152A2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100343291B1 (ko) * | 1999-11-05 | 2002-07-15 | 윤종용 | 반도체 장치의 커패시터 형성 방법 |
KR100414204B1 (ko) * | 2001-05-31 | 2004-01-07 | 삼성전자주식회사 | 캐퍼시터 소자를 갖는 반도체 메모리 장치 및 그 형성 방법 |
US20050229015A1 (en) * | 2002-02-28 | 2005-10-13 | Koninklijke Philips Electronics N.V. | Method for controlling the mode of an electronic application |
KR100613281B1 (ko) * | 2004-06-07 | 2006-08-22 | 동부일렉트로닉스 주식회사 | 박막 커패시터의 제조 방법 |
KR100615092B1 (ko) * | 2004-08-16 | 2006-08-23 | 삼성전자주식회사 | 노드 도전막 패턴들에 각각 자기 정렬시킨 하부 전극들을갖는 에프. 램들 및 그 형성방법들 |
US8437174B2 (en) | 2010-02-15 | 2013-05-07 | Micron Technology, Inc. | Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming |
US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
US8634224B2 (en) | 2010-08-12 | 2014-01-21 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5130885A (en) * | 1991-07-10 | 1992-07-14 | Micron Technology, Inc. | Dram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surface |
US5155657A (en) * | 1991-10-31 | 1992-10-13 | International Business Machines Corporation | High area capacitor formation using material dependent etching |
US5245206A (en) * | 1992-05-12 | 1993-09-14 | International Business Machines Corporation | Capacitors with roughened single crystal plates |
US5566045A (en) * | 1994-08-01 | 1996-10-15 | Texas Instruments, Inc. | High-dielectric-constant material electrodes comprising thin platinum layers |
KR100342296B1 (ko) * | 1994-10-04 | 2002-11-29 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 산소장벽이마련된하부전극을가지는강유전성의메모리소자를포함하는반도체장치와그의제조방법 |
US5573979A (en) * | 1995-02-13 | 1996-11-12 | Texas Instruments Incorporated | Sloped storage node for a 3-D dram cell structure |
US5658381A (en) * | 1995-05-11 | 1997-08-19 | Micron Technology, Inc. | Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal |
US5930106A (en) * | 1996-07-11 | 1999-07-27 | Micron Technology, Inc. | DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films |
US6190992B1 (en) * | 1996-07-15 | 2001-02-20 | Micron Technology, Inc. | Method to achieve rough silicon surface on both sides of container for enhanced capacitance/area electrodes |
US5770500A (en) * | 1996-11-15 | 1998-06-23 | Micron Technology, Inc. | Process for improving roughness of conductive layer |
DE19821776C1 (de) * | 1998-05-14 | 1999-09-30 | Siemens Ag | Herstellverfahren für einen Kondensator in einer integrierten Halbleiterschaltung |
DE19821777C1 (de) * | 1998-05-14 | 1999-06-17 | Siemens Ag | Herstellverfahren für einen Kondensator in einer integrierten Speicherschaltung |
TW408486B (en) * | 1999-03-10 | 2000-10-11 | Nanya Technology Corp | The manufacture method of crown shape capacitor with rough surface |
TW429607B (en) * | 1999-04-13 | 2001-04-11 | United Microelectronics Corp | Structure of dynamic random access memory capacitor and its fabricating method |
-
1998
- 1998-05-18 WO PCT/IB1998/000754 patent/WO1999003152A2/en active Application Filing
- 1998-05-18 EP EP98917542A patent/EP0941552B1/en not_active Expired - Lifetime
- 1998-05-18 DE DE69841302T patent/DE69841302D1/de not_active Expired - Fee Related
- 1998-05-18 JP JP54209998A patent/JP2001516510A/ja not_active Ceased
- 1998-07-07 US US09/111,613 patent/US6417536B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6417536B2 (en) | 2002-07-09 |
DE69841302D1 (de) | 2010-01-07 |
EP0941552B1 (en) | 2009-11-25 |
WO1999003152A2 (en) | 1999-01-21 |
US20010019147A1 (en) | 2001-09-06 |
WO1999003152A3 (en) | 1999-04-01 |
EP0941552A2 (en) | 1999-09-15 |
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