TW201448123A - 半導體非揮發性記憶體及其製造方法 - Google Patents
半導體非揮發性記憶體及其製造方法 Download PDFInfo
- Publication number
- TW201448123A TW201448123A TW102147523A TW102147523A TW201448123A TW 201448123 A TW201448123 A TW 201448123A TW 102147523 A TW102147523 A TW 102147523A TW 102147523 A TW102147523 A TW 102147523A TW 201448123 A TW201448123 A TW 201448123A
- Authority
- TW
- Taiwan
- Prior art keywords
- tunnel
- drain region
- insulating film
- drain
- floating gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000012535 impurity Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013002908 | 2013-01-10 | ||
| JP2013245289A JP2014150241A (ja) | 2013-01-10 | 2013-11-27 | 半導体不揮発性メモリおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201448123A true TW201448123A (zh) | 2014-12-16 |
Family
ID=51166835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102147523A TW201448123A (zh) | 2013-01-10 | 2013-12-20 | 半導體非揮發性記憶體及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2014150241A (ja) |
| TW (1) | TW201448123A (ja) |
| WO (1) | WO2014109175A1 (ja) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61182267A (ja) * | 1985-02-08 | 1986-08-14 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS61276375A (ja) * | 1985-05-29 | 1986-12-06 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | 集積回路ｅｅｐｒｏｍセルおよびその製作方法 |
| JPS6325980A (ja) * | 1986-07-17 | 1988-02-03 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JPH0536988A (ja) * | 1991-07-25 | 1993-02-12 | Miyazaki Oki Electric Co Ltd | 不揮発性半導体メモリ素子の製造方法 |
-
2013
- 2013-11-27 JP JP2013245289A patent/JP2014150241A/ja active Pending
- 2013-12-13 WO PCT/JP2013/083481 patent/WO2014109175A1/ja active Application Filing
- 2013-12-20 TW TW102147523A patent/TW201448123A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014109175A1 (ja) | 2014-07-17 |
| JP2014150241A (ja) | 2014-08-21 |
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