TW201213522A - Polishing agent and polishing method - Google Patents

Polishing agent and polishing method Download PDF

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Publication number
TW201213522A
TW201213522A TW100133260A TW100133260A TW201213522A TW 201213522 A TW201213522 A TW 201213522A TW 100133260 A TW100133260 A TW 100133260A TW 100133260 A TW100133260 A TW 100133260A TW 201213522 A TW201213522 A TW 201213522A
Authority
TW
Taiwan
Prior art keywords
polishing
abrasive
polished
group
abrasive according
Prior art date
Application number
TW100133260A
Other languages
English (en)
Chinese (zh)
Inventor
Satoshi Takemiya
Iori Yoshida
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW201213522A publication Critical patent/TW201213522A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW100133260A 2010-09-15 2011-09-15 Polishing agent and polishing method TW201213522A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010206500 2010-09-15

Publications (1)

Publication Number Publication Date
TW201213522A true TW201213522A (en) 2012-04-01

Family

ID=45831550

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100133260A TW201213522A (en) 2010-09-15 2011-09-15 Polishing agent and polishing method

Country Status (3)

Country Link
JP (1) JPWO2012036087A1 (ja)
TW (1) TW201213522A (ja)
WO (1) WO2012036087A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI683895B (zh) * 2015-02-19 2020-02-01 日商福吉米股份有限公司 矽晶圓研磨用組成物及研磨方法
CN113524025A (zh) * 2021-07-30 2021-10-22 河南科技学院 一种SiC单晶片抛光方法
CN113874464A (zh) * 2019-06-04 2021-12-31 昭和电工材料株式会社 研磨液、分散体、研磨液的制造方法及研磨方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY168097A (en) * 2013-03-30 2018-10-11 Hoya Corp Method for manufacturing magnetic-disk glass substrate, magnetic-disk glass substrate, and method for manufacturing magnetic disk
JP6611485B2 (ja) * 2014-11-07 2019-11-27 株式会社フジミインコーポレーテッド 研磨方法およびポリシング用組成物
JP6905836B2 (ja) * 2017-03-02 2021-07-21 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
KR102358134B1 (ko) * 2021-07-08 2022-02-08 영창케미칼 주식회사 표면 결함수 및 헤이즈 저감용 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 그를 이용한 최종 연마 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4284771B2 (ja) * 1999-08-31 2009-06-24 住友化学株式会社 金属研磨用αアルミナ研磨材およびその製法
JP3450247B2 (ja) * 1999-12-28 2003-09-22 Necエレクトロニクス株式会社 金属配線形成方法
JP2001187877A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
MXPA06000251A (es) * 2003-07-11 2006-03-30 Grace W R & Co Particulas abrasivas para pulido quimico mecanico.
JP2005260218A (ja) * 2004-02-12 2005-09-22 Mitsubishi Materials Corp SiC単結晶基材及びその製造方法、半導体膜形成基材
JP5168890B2 (ja) * 2006-11-24 2013-03-27 日亜化学工業株式会社 半導体発光素子及び半導体発光素子の製造方法
JP2010056127A (ja) * 2008-08-26 2010-03-11 Hitachi Chem Co Ltd シリコン膜用cmpスラリー
JP4399611B2 (ja) * 2007-03-29 2010-01-20 大学共同利用機関法人 高エネルギー加速器研究機構 研磨方法および研磨装置
JP2010135472A (ja) * 2008-12-03 2010-06-17 Fujifilm Corp 研磨用組成物および研磨方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI683895B (zh) * 2015-02-19 2020-02-01 日商福吉米股份有限公司 矽晶圓研磨用組成物及研磨方法
CN113874464A (zh) * 2019-06-04 2021-12-31 昭和电工材料株式会社 研磨液、分散体、研磨液的制造方法及研磨方法
TWI759753B (zh) * 2019-06-04 2022-04-01 日商昭和電工材料股份有限公司 研磨液、分散體、研磨液的製造方法及研磨方法
CN113524025A (zh) * 2021-07-30 2021-10-22 河南科技学院 一种SiC单晶片抛光方法

Also Published As

Publication number Publication date
WO2012036087A1 (ja) 2012-03-22
JPWO2012036087A1 (ja) 2014-02-03

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