TW200937530A - Silicon substrate and manufacturing method thereof - Google Patents

Silicon substrate and manufacturing method thereof Download PDF

Info

Publication number: TW200937530A
Authority: TW; Taiwan
Prior art keywords: substrate; concentration; heat treatment; carbon; oxygen
Prior art date: 2007-12-11

Application number

TW97147835A

Other languages

English (en)

Chinese (zh)

Inventor

Kazunari Kurita

Shuichi Omote

Original Assignee

Sumco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-12-11

Filing date

2008-12-09

Publication date

2009-09-01

2008-12-09 Application filed by Sumco Corp filed Critical Sumco Corp

2009-09-01 Publication of TW200937530A publication Critical patent/TW200937530A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 152
238000004519 manufacturing process Methods 0.000 title claims abstract description 59
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 6
229910052710 silicon Inorganic materials 0.000 title abstract description 6
239000010703 silicon Substances 0.000 title abstract description 6
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 93
239000013078 crystal Substances 0.000 claims abstract description 93
229910052760 oxygen Inorganic materials 0.000 claims abstract description 93
239000001301 oxygen Substances 0.000 claims abstract description 93
238000010438 heat treatment Methods 0.000 claims abstract description 90
238000000034 method Methods 0.000 claims abstract description 69
238000001556 precipitation Methods 0.000 claims abstract description 18
238000005247 gettering Methods 0.000 claims abstract description 7
230000001737 promoting effect Effects 0.000 claims abstract description 5
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 91
229910052799 carbon Inorganic materials 0.000 claims description 90
229910052707 ruthenium Inorganic materials 0.000 claims description 81
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 79
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 62
229910052796 boron Inorganic materials 0.000 claims description 62
239000002244 precipitate Substances 0.000 claims description 57
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 39
229910052732 germanium Inorganic materials 0.000 claims description 36
229910052739 hydrogen Inorganic materials 0.000 claims description 32
239000001257 hydrogen Substances 0.000 claims description 32
230000008569 process Effects 0.000 claims description 32
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 30
238000003384 imaging method Methods 0.000 claims description 23
229910052715 tantalum Inorganic materials 0.000 claims description 23
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 23
239000007789 gas Substances 0.000 claims description 15
201000006935 Becker muscular dystrophy Diseases 0.000 claims description 11
208000037663 Best vitelliform macular dystrophy Diseases 0.000 claims description 11
239000011261 inert gas Substances 0.000 claims description 11
208000020938 vitelliform macular dystrophy 2 Diseases 0.000 claims description 11
239000002131 composite material Substances 0.000 claims description 10
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
239000004576 sand Substances 0.000 claims description 7
229910052786 argon Inorganic materials 0.000 claims description 4
229910052757 nitrogen Inorganic materials 0.000 claims description 4
239000010410 layer Substances 0.000 description 57
238000011109 contamination Methods 0.000 description 30
229910001385 heavy metal Inorganic materials 0.000 description 29
229910052751 metal Inorganic materials 0.000 description 26
239000002184 metal Substances 0.000 description 26
235000012431 wafers Nutrition 0.000 description 26
125000004429 atom Chemical group 0.000 description 20
230000007547 defect Effects 0.000 description 17
YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 15
229910052805 deuterium Inorganic materials 0.000 description 15
230000000694 effects Effects 0.000 description 15
239000000155 melt Substances 0.000 description 14
238000001179 sorption measurement Methods 0.000 description 12
230000015572 biosynthetic process Effects 0.000 description 11
238000002425 crystallisation Methods 0.000 description 11
230000008025 crystallization Effects 0.000 description 10
238000005468 ion implantation Methods 0.000 description 10
239000012535 impurity Substances 0.000 description 9
239000006104 solid solution Substances 0.000 description 8
238000010586 diagram Methods 0.000 description 7
238000009792 diffusion process Methods 0.000 description 7
238000005259 measurement Methods 0.000 description 6
238000012546 transfer Methods 0.000 description 6
238000000151 deposition Methods 0.000 description 5
230000008021 deposition Effects 0.000 description 5
238000005530 etching Methods 0.000 description 5
239000002994 raw material Substances 0.000 description 5
238000004381 surface treatment Methods 0.000 description 5
238000005054 agglomeration Methods 0.000 description 4
230000002776 aggregation Effects 0.000 description 4
-1 carbon ions Chemical class 0.000 description 4
238000003763 carbonization Methods 0.000 description 4
230000007423 decrease Effects 0.000 description 4
238000011156 evaluation Methods 0.000 description 4
229910052759 nickel Inorganic materials 0.000 description 4
150000004767 nitrides Chemical class 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
238000012545 processing Methods 0.000 description 4
229910052802 copper Inorganic materials 0.000 description 3
230000001419 dependent effect Effects 0.000 description 3
238000003795 desorption Methods 0.000 description 3
238000001514 detection method Methods 0.000 description 3
239000002019 doping agent Substances 0.000 description 3
229910002804 graphite Inorganic materials 0.000 description 3
239000010439 graphite Substances 0.000 description 3
150000002500 ions Chemical class 0.000 description 3
239000000463 material Substances 0.000 description 3
CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 description 3
239000002245 particle Substances 0.000 description 3
239000010453 quartz Substances 0.000 description 3
230000009467 reduction Effects 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
238000007711 solidification Methods 0.000 description 3
230000008023 solidification Effects 0.000 description 3
AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
108091006146 Channels Proteins 0.000 description 2
QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
238000004458 analytical method Methods 0.000 description 2
238000010420 art technique Methods 0.000 description 2
238000001479 atomic absorption spectroscopy Methods 0.000 description 2
229910052797 bismuth Inorganic materials 0.000 description 2
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000001816 cooling Methods 0.000 description 2
DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
238000007872 degassing Methods 0.000 description 2
238000013461 design Methods 0.000 description 2
208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 2
208000035475 disorder Diseases 0.000 description 2
238000009826 distribution Methods 0.000 description 2
239000000428 dust Substances 0.000 description 2
150000002431 hydrogen Chemical class 0.000 description 2
230000006872 improvement Effects 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
239000011229 interlayer Substances 0.000 description 2
239000002923 metal particle Substances 0.000 description 2
238000010327 methods by industry Methods 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
229920005591 polysilicon Polymers 0.000 description 2
238000002360 preparation method Methods 0.000 description 2
238000003672 processing method Methods 0.000 description 2
239000000376 reactant Substances 0.000 description 2
238000012552 review Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
238000006467 substitution reaction Methods 0.000 description 2
238000005406 washing Methods 0.000 description 2
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
206010021143 Hypoxia Diseases 0.000 description 1
102000004129 N-Type Calcium Channels Human genes 0.000 description 1
108090000699 N-Type Calcium Channels Proteins 0.000 description 1
206010036790 Productive cough Diseases 0.000 description 1
240000006394 Sorghum bicolor Species 0.000 description 1
235000011684 Sorghum saccharatum Nutrition 0.000 description 1
PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 description 1
ACZDXRVCACAKLV-UHFFFAOYSA-N [B].[C].[O] Chemical compound [B].[C].[O] ACZDXRVCACAKLV-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
229960001701 chloroform Drugs 0.000 description 1
SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
230000009918 complex formation Effects 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000005261 decarburization Methods 0.000 description 1
210000003298 dental enamel Anatomy 0.000 description 1
230000001877 deodorizing effect Effects 0.000 description 1
238000004043 dyeing Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000007667 floating Methods 0.000 description 1
230000001146 hypoxic effect Effects 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
238000002156 mixing Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000009972 noncorrosive effect Effects 0.000 description 1
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
239000012071 phase Substances 0.000 description 1
QYMMJNLHFKGANY-UHFFFAOYSA-N profenofos Chemical compound CCCSP(=O)(OCC)OC1=CC=C(Br)C=C1Cl QYMMJNLHFKGANY-UHFFFAOYSA-N 0.000 description 1
FTIMWVSQXCWTAW-UHFFFAOYSA-N ruthenium Chemical compound [Ru].[Ru] FTIMWVSQXCWTAW-UHFFFAOYSA-N 0.000 description 1
238000005204 segregation Methods 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
230000003595 spectral effect Effects 0.000 description 1
210000003802 sputum Anatomy 0.000 description 1
208000024794 sputum Diseases 0.000 description 1
239000007858 starting material Substances 0.000 description 1
238000003860 storage Methods 0.000 description 1
238000005728 strengthening Methods 0.000 description 1
230000003746 surface roughness Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Computer Hardware Design (AREA)
General Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Electromagnetism (AREA)
Thermal Sciences (AREA)
Solid State Image Pick-Up Elements (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

TW97147835A 2007-12-11 2008-12-09 Silicon substrate and manufacturing method thereof TW200937530A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007320129		2007-12-11

Publications (1)

Publication Number	Publication Date
TW200937530A true TW200937530A (en)	2009-09-01

Family

ID=40755530

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW97147835A TW200937530A (en)	2007-12-11	2008-12-09	Silicon substrate and manufacturing method thereof

Country Status (3)

Country	Link
JP (1)	JPWO2009075288A1 (ja)
TW (1)	TW200937530A (ja)
WO (1)	WO2009075288A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011054821A (ja) *	2009-09-03	2011-03-17	Sumco Corp	エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JP2011096979A (ja) *	2009-11-02	2011-05-12	Sumco Corp	シリコンウェーハ及びその製造方法
JP2012059849A (ja) *	2010-09-08	2012-03-22	Shin Etsu Handotai Co Ltd	シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法
US9634098B2 (en) *	2013-06-11	2017-04-25	SunEdison Semiconductor Ltd. (UEN201334164H)	Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
JP6848900B2 (ja) *	2018-02-27	2021-03-24	株式会社Sumco	半導体ウェーハのゲッタリング能力の評価方法および該評価方法を用いた半導体ウェーハの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH1050715A (ja) *	1996-07-29	1998-02-20	Sumitomo Sitix Corp	シリコンウェーハとその製造方法
JPH11204534A (ja) *	1998-01-14	1999-07-30	Sumitomo Metal Ind Ltd	シリコンエピタキシャルウェーハの製造方法
JP3988307B2 (ja) *	1999-03-26	2007-10-10	株式会社Ｓｕｍｃｏ	シリコン単結晶、シリコンウェーハ及びエピタキシャルウェーハ
JP2005522879A (ja) *	2002-04-10	2005-07-28	エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド	理想的酸素析出シリコンウエハにおいてデヌーデッドゾーン深さを制御する方法
JP4360208B2 (ja) *	2003-11-21	2009-11-11	信越半導体株式会社	シリコン単結晶の製造方法
JP5023451B2 (ja) *	2004-08-25	2012-09-12	株式会社Ｓｕｍｃｏ	シリコンウェーハの製造方法、シリコン単結晶育成方法
JP4604889B2 (ja) *	2005-05-25	2011-01-05	株式会社Ｓｕｍｃｏ	シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
JP4983161B2 (ja) *	2005-10-24	2012-07-25	株式会社Ｓｕｍｃｏ	シリコン半導体基板およびその製造方法
JP2007273959A (ja) *	2006-03-06	2007-10-18	Matsushita Electric Ind Co Ltd	光検出素子及びその製造方法

2008
- 2008-12-09 TW TW97147835A patent/TW200937530A/zh unknown
- 2008-12-10 WO PCT/JP2008/072400 patent/WO2009075288A1/ja active Application Filing
- 2008-12-10 JP JP2009545430A patent/JPWO2009075288A1/ja active Pending

Also Published As

Publication number	Publication date
WO2009075288A1 (ja)	2009-06-18
JPWO2009075288A1 (ja)	2011-04-28

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