TW200710608A - Photoresist stripping solution - Google Patents

Photoresist stripping solution

Info

Publication number
TW200710608A
TW200710608A TW095116976A TW95116976A TW200710608A TW 200710608 A TW200710608 A TW 200710608A TW 095116976 A TW095116976 A TW 095116976A TW 95116976 A TW95116976 A TW 95116976A TW 200710608 A TW200710608 A TW 200710608A
Authority
TW
Taiwan
Prior art keywords
photoresist
causing damage
stripping solution
photoresist stripping
organic solvent
Prior art date
Application number
TW095116976A
Other languages
English (en)
Other versions
TWI332126B (en
Inventor
Shigeru Yokoi
Atsushi Yamanouchi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200710608A publication Critical patent/TW200710608A/zh
Application granted granted Critical
Publication of TWI332126B publication Critical patent/TWI332126B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW095116976A 2005-05-12 2006-05-12 Photoresist stripping solution TWI332126B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005140384A JP4678673B2 (ja) 2005-05-12 2005-05-12 ホトレジスト用剥離液

Publications (2)

Publication Number Publication Date
TW200710608A true TW200710608A (en) 2007-03-16
TWI332126B TWI332126B (en) 2010-10-21

Family

ID=37484044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116976A TWI332126B (en) 2005-05-12 2006-05-12 Photoresist stripping solution

Country Status (5)

Country Link
US (2) US20070078072A1 (zh)
JP (1) JP4678673B2 (zh)
KR (1) KR100730521B1 (zh)
CN (1) CN1873543B (zh)
TW (1) TWI332126B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607284B (zh) * 2013-05-20 2017-12-01 富士軟片股份有限公司 圖案剝離方法、電子元件及其製造方法

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KR101344168B1 (ko) * 2006-12-21 2013-12-20 동우 화인켐 주식회사 폴리이미드 리무버 조성물
CN101286016A (zh) * 2007-04-13 2008-10-15 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂
KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
US8357646B2 (en) 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
CN102473638B (zh) * 2009-07-30 2015-02-18 巴斯夫欧洲公司 用于高级半导体应用的离子植入后剥离剂
KR20110018775A (ko) * 2009-08-18 2011-02-24 삼성전자주식회사 컬러 필터 박리용 조성물 및 이를 이용한 컬러 필터 재생 방법
JP5404459B2 (ja) * 2010-02-08 2014-01-29 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
KR101397251B1 (ko) * 2011-12-06 2014-05-21 주식회사 엘지화학 박리액 조성물
JP6144468B2 (ja) * 2012-08-22 2017-06-07 富士フイルム株式会社 レジスト剥離方法および半導体基板製品の製造方法
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
ES2628098T3 (es) * 2013-01-11 2017-08-01 Sachem, Inc. Inhibidor de color para hidróxido de amonio cuaternario en disolvente no acuoso
JP6165665B2 (ja) 2013-05-30 2017-07-19 信越化学工業株式会社 基板の洗浄方法
JP2017026645A (ja) * 2013-12-03 2017-02-02 Jsr株式会社 レジスト除去剤およびレジスト除去方法
KR20150108984A (ko) * 2014-03-18 2015-10-01 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
CN104195560A (zh) * 2014-09-10 2014-12-10 昆山欣谷微电子材料有限公司 四甲基氢氧化铵无水剥离液
KR20170127527A (ko) * 2015-04-10 2017-11-21 후지필름 가부시키가이샤 레지스트 제거액, 레지스트 제거 방법, 재생 반도체 기판의 제조 방법
JPWO2017065153A1 (ja) * 2015-10-13 2018-07-26 ナガセケムテックス株式会社 フォトレジスト剥離液
US20220033343A1 (en) 2018-09-28 2022-02-03 Tokuyama Corporation Method for producing organic solvent solution of quaternary ammonium hydroxide
CN110161812A (zh) * 2019-06-06 2019-08-23 成都中电熊猫显示科技有限公司 重工药液及其制备方法、重工装置
CN110967946A (zh) * 2019-12-04 2020-04-07 苏州博洋化学股份有限公司 一种高效碱性光刻胶剥离液
CN113594024B (zh) * 2021-07-30 2024-01-30 中国电子科技集团公司第四十四研究所 金属电极剥离胶膜的制作方法及金属剥离电极的制作方法

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US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
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JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
KR100822236B1 (ko) * 2000-11-30 2008-04-16 토소가부시키가이샤 레지스트 박리제
JP3403187B2 (ja) * 2001-08-03 2003-05-06 東京応化工業株式会社 ホトレジスト用剥離液
JP2003129089A (ja) * 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
US20040256358A1 (en) * 2001-11-02 2004-12-23 Hidetaka Shimizu Method for releasing resist
KR101017738B1 (ko) * 2002-03-12 2011-02-28 미츠비시 가스 가가쿠 가부시키가이샤 포토레지스트 박리제 조성물 및 세정 조성물
JP3516446B2 (ja) * 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
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US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607284B (zh) * 2013-05-20 2017-12-01 富士軟片股份有限公司 圖案剝離方法、電子元件及其製造方法

Also Published As

Publication number Publication date
CN1873543A (zh) 2006-12-06
KR100730521B1 (ko) 2007-06-20
TWI332126B (en) 2010-10-21
JP2006317714A (ja) 2006-11-24
US20100022426A1 (en) 2010-01-28
US20070078072A1 (en) 2007-04-05
CN1873543B (zh) 2012-02-08
KR20060117219A (ko) 2006-11-16
JP4678673B2 (ja) 2011-04-27
US8114825B2 (en) 2012-02-14

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