SG46325A1 - Semiconductor processing apparatus - Google Patents

Semiconductor processing apparatus

Info

Publication number
SG46325A1
SG46325A1 SG1996002937A SG1996002937A SG46325A1 SG 46325 A1 SG46325 A1 SG 46325A1 SG 1996002937 A SG1996002937 A SG 1996002937A SG 1996002937 A SG1996002937 A SG 1996002937A SG 46325 A1 SG46325 A1 SG 46325A1
Authority
SG
Singapore
Prior art keywords
processing apparatus
semiconductor processing
semiconductor
processing
Prior art date
Application number
SG1996002937A
Other languages
English (en)
Inventor
Seishi Murakami
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG46325A1 publication Critical patent/SG46325A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG1996002937A 1993-06-24 1994-06-24 Semiconductor processing apparatus SG46325A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17984593A JP3165938B2 (ja) 1993-06-24 1993-06-24 ガス処理装置

Publications (1)

Publication Number Publication Date
SG46325A1 true SG46325A1 (en) 1998-02-20

Family

ID=16072914

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996002937A SG46325A1 (en) 1993-06-24 1994-06-24 Semiconductor processing apparatus

Country Status (6)

Country Link
US (1) US5462603A (ja)
JP (1) JP3165938B2 (ja)
KR (1) KR100260119B1 (ja)
GB (1) GB2279366B (ja)
SG (1) SG46325A1 (ja)
TW (1) TW280940B (ja)

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
TW254030B (en) * 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
KR100280772B1 (ko) * 1994-08-31 2001-02-01 히가시 데쓰로 처리장치
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
JP3983831B2 (ja) * 1995-05-30 2007-09-26 シグマメルテック株式会社 基板ベーキング装置及び基板ベーキング方法
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US6002109A (en) 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
JP3586031B2 (ja) * 1996-03-27 2004-11-10 株式会社東芝 サセプタおよび熱処理装置および熱処理方法
US5709772A (en) * 1996-03-29 1998-01-20 Applied Materials, Inc. Non-plasma halogenated gas flow to prevent metal residues
US5753566A (en) * 1996-05-23 1998-05-19 Taiwan Semiconductor Manufactured Company, Ltd. Method of spin-on-glass etchback using hot backside helium
US6046439A (en) 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
GB9622177D0 (en) * 1996-10-24 1996-12-18 Xaar Ltd Passivation of ink jet print heads
KR100246963B1 (ko) * 1996-11-22 2000-03-15 윤종용 반도체 제조장치의 웨이퍼 홀더용 스테이지
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US5911896A (en) * 1997-06-25 1999-06-15 Brooks Automation, Inc. Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element
KR100418519B1 (ko) * 1997-07-03 2004-04-21 삼성전자주식회사 확산설비 구조 및 가스 제어 방법
JPH11176902A (ja) * 1997-12-10 1999-07-02 Oki Electric Ind Co Ltd 半導体製造装置及びその製造方法
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
JP3333135B2 (ja) * 1998-06-25 2002-10-07 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US6139640A (en) * 1998-08-12 2000-10-31 Advanced Micro Devices, Inc. Chemical vapor deposition system and method employing a mass flow controller
US6224678B1 (en) 1998-08-12 2001-05-01 Advanced Micro Devices, Inc. Modified thermocouple mounting bushing and system including the same
US6206966B1 (en) 1998-09-30 2001-03-27 The Regents Of The University Of California Pedestal substrate for coated optics
KR20000027189A (ko) * 1998-10-27 2000-05-15 윤종용 반도체 장치 제조를 위한 증착설비의 가스공급장치
DE69931278T2 (de) * 1998-11-13 2007-03-29 Mattson Technology Inc., Fremont Vorrichtung und verfahren zur thermischen behandlung von halbleitersubstraten
US6087632A (en) * 1999-01-11 2000-07-11 Tokyo Electron Limited Heat processing device with hot plate and associated reflector
US6469283B1 (en) * 1999-03-04 2002-10-22 Applied Materials, Inc. Method and apparatus for reducing thermal gradients within a substrate support
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
US6151794A (en) * 1999-06-02 2000-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for heat treating an object
US6307184B1 (en) * 1999-07-12 2001-10-23 Fsi International, Inc. Thermal processing chamber for heating and cooling wafer-like objects
US6406545B2 (en) 1999-07-27 2002-06-18 Kabushiki Kaisha Toshiba Semiconductor workpiece processing apparatus and method
TW476983B (en) * 1999-09-30 2002-02-21 Tokyo Electron Ltd Heat treatment unit and heat treatment method
KR100629255B1 (ko) * 1999-11-12 2006-09-29 삼성전자주식회사 반도체 포토 공정용 베이크 장치
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6303906B1 (en) * 1999-11-30 2001-10-16 Wafermasters, Inc. Resistively heated single wafer furnace
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
US20010035403A1 (en) 2000-05-18 2001-11-01 Albert Wang Method and structure for producing flat wafer chucks
EP1220303B1 (en) * 2000-06-02 2004-09-08 Ibiden Co., Ltd. Hot plate unit
US6652655B1 (en) * 2000-07-07 2003-11-25 Applied Materials, Inc. Method to isolate multi zone heater from atmosphere
US6838115B2 (en) 2000-07-12 2005-01-04 Fsi International, Inc. Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
US6458416B1 (en) * 2000-07-19 2002-10-01 Micron Technology, Inc. Deposition methods
US7192888B1 (en) 2000-08-21 2007-03-20 Micron Technology, Inc. Low selectivity deposition methods
US7094690B1 (en) 2000-08-31 2006-08-22 Micron Technology, Inc. Deposition methods and apparatuses providing surface activation
US6503331B1 (en) * 2000-09-12 2003-01-07 Applied Materials, Inc. Tungsten chamber with stationary heater
CN1278386C (zh) 2000-09-29 2006-10-04 东京毅力科创株式会社 热处理装置和热处理方法
JP2002134592A (ja) * 2000-10-19 2002-05-10 Tokyo Ohka Kogyo Co Ltd 熱処理装置および熱処理方法
US6576572B2 (en) 2000-12-28 2003-06-10 Schott Lithotec Ag Method of heating a substrate using a variable surface hot plate for improved bake uniformity
JP4690368B2 (ja) * 2000-12-28 2011-06-01 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
JP2002313781A (ja) * 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
KR20020080954A (ko) 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
US7368014B2 (en) * 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
EP1293587A1 (en) * 2001-09-14 2003-03-19 Kabushiki Kaisha Kobe Seiko Sho Vacuum coating apparatus with central heater
JP2003100855A (ja) * 2001-09-27 2003-04-04 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ処理装置、シリコン単結晶ウェーハおよびシリコンエピタキシャルウェーハの製造方法
US6887803B2 (en) * 2001-11-08 2005-05-03 Wafermasters, Inc. Gas-assisted rapid thermal processing
KR20030039247A (ko) * 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
TWI245329B (en) * 2001-11-14 2005-12-11 Anelva Corp Heating element CVD device and heating element CVD method using the same
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
JP2003253449A (ja) * 2002-02-27 2003-09-10 Sumitomo Electric Ind Ltd 半導体／液晶製造装置
JP3840990B2 (ja) * 2002-03-05 2006-11-01 住友電気工業株式会社 半導体／液晶製造装置
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6861321B2 (en) 2002-04-05 2005-03-01 Asm America, Inc. Method of loading a wafer onto a wafer holder to reduce thermal shock
AU2003257112A1 (en) 2002-09-10 2004-04-30 Fsi International, Inc. Thermal process station with heated lid
JP3887291B2 (ja) * 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
US6935638B2 (en) * 2003-02-21 2005-08-30 Blue29, Llc Universal substrate holder for treating objects in fluids
JP4251887B2 (ja) * 2003-02-26 2009-04-08 東京エレクトロン株式会社 真空処理装置
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US7718930B2 (en) 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table
KR100890493B1 (ko) 2003-04-18 2009-03-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 제조 장치
US6860944B2 (en) * 2003-06-16 2005-03-01 Blue29 Llc Microelectronic fabrication system components and method for processing a wafer using such components
KR100796051B1 (ko) * 2003-08-18 2008-01-21 동경 엘렉트론 주식회사 기판 유지구조물 및 기판 처리장치
JP4602662B2 (ja) * 2003-12-01 2010-12-22 株式会社ブリヂストン セラミックヒータユニット
JP2006128559A (ja) * 2004-11-01 2006-05-18 Tokyo Electron Ltd 基板処理システム
JP4180637B2 (ja) * 2004-03-26 2008-11-12 株式会社日立国際電気 半導体製造装置および半導体装置の製造方法
JP4710255B2 (ja) * 2004-03-26 2011-06-29 ウシオ電機株式会社 加熱ステージ
US7253107B2 (en) * 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
KR100601956B1 (ko) * 2004-06-28 2006-07-14 삼성전자주식회사 자기장의 변화를 이용한 온도측정장치
JP4486489B2 (ja) * 2004-12-22 2010-06-23 東京エレクトロン株式会社 処理方法及び処理装置
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
WO2007025565A1 (en) * 2005-09-01 2007-03-08 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
US20090301867A1 (en) * 2006-02-24 2009-12-10 Citibank N.A. Integrated system for semiconductor substrate processing using liquid phase metal deposition
JP5041736B2 (ja) * 2006-06-09 2012-10-03 キヤノントッキ株式会社 基板加熱装置及び基板加熱方法
JP5245268B2 (ja) * 2006-06-16 2013-07-24 東京エレクトロン株式会社 載置台構造及び熱処理装置
US20080017116A1 (en) * 2006-07-18 2008-01-24 Jeffrey Campbell Substrate support with adjustable lift and rotation mount
KR101315412B1 (ko) * 2006-09-27 2013-10-07 엘아이지에이디피 주식회사 기판증착기 및 이를 이용한 증착방법
KR100867191B1 (ko) * 2006-11-02 2008-11-06 주식회사 유진테크 기판처리장치 및 기판처리방법
EP2094879A1 (en) * 2006-11-27 2009-09-02 Momentive Performance Materials Inc. Quartz encapsulated heater assembly
JP5029257B2 (ja) 2007-01-17 2012-09-19 東京エレクトロン株式会社 載置台構造及び処理装置
JP5014080B2 (ja) * 2007-11-19 2012-08-29 コバレントマテリアル株式会社 面状ヒータ
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP5476726B2 (ja) * 2009-01-30 2014-04-23 住友電気工業株式会社 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置
JP2011054838A (ja) * 2009-09-03 2011-03-17 Tokyo Electron Ltd 載置台構造及び処理装置
JP5416570B2 (ja) * 2009-12-15 2014-02-12 住友電気工業株式会社 加熱冷却デバイスおよびそれを搭載した装置
JP2011222931A (ja) * 2009-12-28 2011-11-04 Tokyo Electron Ltd 載置台構造及び処理装置
KR101205433B1 (ko) * 2010-07-28 2012-11-28 국제엘렉트릭코리아 주식회사 기판 서셉터 및 그것을 갖는 증착 장치
JP5732284B2 (ja) * 2010-08-27 2015-06-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
US9719169B2 (en) * 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
KR101312592B1 (ko) * 2012-04-10 2013-09-30 주식회사 유진테크 히터 승강형 기판 처리 장치
US9088085B2 (en) * 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US10000847B2 (en) * 2014-09-24 2018-06-19 Applied Materials, Inc. Graphite susceptor
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
KR102441541B1 (ko) * 2017-11-09 2022-09-08 주식회사 미코세라믹스 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69007733T2 (de) * 1989-05-08 1994-09-29 Philips Nv Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
WO1993013241A1 (en) * 1991-12-23 1993-07-08 Genus, Inc. Purge gas in wafer coating area selection

Also Published As

Publication number Publication date
KR950001878A (ko) 1995-01-04
TW280940B (ja) 1996-07-11
GB2279366A (en) 1995-01-04
KR100260119B1 (ko) 2000-07-01
JPH0778766A (ja) 1995-03-20
US5462603A (en) 1995-10-31
GB2279366B (en) 1996-12-18
JP3165938B2 (ja) 2001-05-14
GB9412704D0 (en) 1994-08-17

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