SG162699A1 - Inline vacuum processing apparatus, method of controlling the same, and information recording medium manufacturing method - Google Patents
Inline vacuum processing apparatus, method of controlling the same, and information recording medium manufacturing methodInfo
- Publication number
- SG162699A1 SG162699A1 SG200908476-5A SG2009084765A SG162699A1 SG 162699 A1 SG162699 A1 SG 162699A1 SG 2009084765 A SG2009084765 A SG 2009084765A SG 162699 A1 SG162699 A1 SG 162699A1
- Authority
- SG
- Singapore
- Prior art keywords
- deposition
- deposition chamber
- processing apparatus
- vacuum processing
- unit
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008335157 | 2008-12-26 | ||
JP2009284468A JP5431901B2 (ja) | 2008-12-26 | 2009-12-15 | インライン真空処理装置、インライン真空処理装置の制御方法、情報記録媒体の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG162699A1 true SG162699A1 (en) | 2010-07-29 |
Family
ID=42285292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200908476-5A SG162699A1 (en) | 2008-12-26 | 2009-12-18 | Inline vacuum processing apparatus, method of controlling the same, and information recording medium manufacturing method |
Country Status (4)
Country | Link |
---|---|
US (1) | US8900363B2 (ja) |
JP (1) | JP5431901B2 (ja) |
CN (1) | CN101768732B (ja) |
SG (1) | SG162699A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104950828B (zh) * | 2014-03-28 | 2018-07-06 | 北京北方华创微电子装备有限公司 | 工艺控制的方法及*** |
US20160359080A1 (en) * | 2015-06-07 | 2016-12-08 | Solarcity Corporation | System, method and apparatus for chemical vapor deposition |
CN112126910B (zh) * | 2020-08-04 | 2022-11-18 | 山西云矽电子科技有限公司 | 一种基于plc在金刚石生长***中的控制方法 |
Family Cites Families (42)
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US5110249A (en) * | 1986-10-23 | 1992-05-05 | Innotec Group, Inc. | Transport system for inline vacuum processing |
JP2537822B2 (ja) * | 1986-11-20 | 1996-09-25 | 松下電器産業株式会社 | プラズマcvd方法 |
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JP2948842B2 (ja) * | 1989-11-24 | 1999-09-13 | 日本真空技術株式会社 | インライン型cvd装置 |
US5256204A (en) * | 1991-12-13 | 1993-10-26 | United Microelectronics Corporation | Single semiconductor water transfer method and manufacturing system |
US6290824B1 (en) * | 1992-10-28 | 2001-09-18 | Hitachi, Ltd. | Magnetic film forming system |
TW276353B (ja) * | 1993-07-15 | 1996-05-21 | Hitachi Seisakusyo Kk | |
KR100291971B1 (ko) * | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | 기판처리장치및방법과박막반도체디바이스제조방법 |
KR100198477B1 (ko) * | 1994-04-08 | 1999-06-15 | 이시다 아키라 | 기판처리장치 및 방법 |
DE9407482U1 (de) * | 1994-05-05 | 1994-10-06 | Balzers und Leybold Deutschland Holding AG, 63450 Hanau | Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken |
JPH08193271A (ja) | 1995-01-13 | 1996-07-30 | Aneruba Kk | その場クリーニング処理後の予備的処理完了点検出装置および完了点検出法 |
US6273955B1 (en) * | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
US5763010A (en) * | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers |
US5928389A (en) * | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
US6152070A (en) * | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
IT1290911B1 (it) * | 1997-02-03 | 1998-12-14 | Siv Soc Italiana Vetro | Procedimento e dispositivo per l'alimentazione di impianti da vuoto atti al deposito di rivestimenti superficiali su substrati. |
US6017414A (en) * | 1997-03-31 | 2000-01-25 | Lam Research Corporation | Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers |
GB2343550A (en) * | 1997-07-29 | 2000-05-10 | Silicon Genesis Corp | Cluster tool method and apparatus using plasma immersion ion implantation |
US6534007B1 (en) * | 1997-08-01 | 2003-03-18 | Applied Komatsu Technology, Inc. | Method and apparatus for detecting the endpoint of a chamber cleaning |
JPH1192931A (ja) * | 1997-09-19 | 1999-04-06 | Fujitsu Ltd | 真空成膜方法及び装置 |
JP4268234B2 (ja) * | 1998-02-16 | 2009-05-27 | キヤノンアネルバ株式会社 | 情報記録ディスク用成膜装置 |
US6245149B1 (en) * | 1999-07-01 | 2001-06-12 | Applied Materials, Inc. | Inert barrier for high purity epitaxial deposition systems |
US6889110B1 (en) * | 1999-10-01 | 2005-05-03 | Novellus Systems, Inc. | Operational lists for simultaneous wafer scheduling and system event scheduling |
JP2001351868A (ja) * | 2000-06-07 | 2001-12-21 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP4227720B2 (ja) * | 2000-06-21 | 2009-02-18 | キヤノンアネルバ株式会社 | 情報記録ディスク製造装置及び製造方法並びにプラズマアッシング方法 |
JP4502159B2 (ja) * | 2000-07-12 | 2010-07-14 | キヤノンアネルバ株式会社 | 情報記録ディスク用成膜装置 |
JP2002057106A (ja) * | 2000-08-08 | 2002-02-22 | Tokyo Electron Ltd | 処理装置のクリーニング方法及び処理装置 |
JP4567867B2 (ja) | 2000-10-24 | 2010-10-20 | キヤノンアネルバ株式会社 | 磁気記録ディスク用成膜装置及び磁気記録ディスク製作方法 |
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US7028696B2 (en) * | 2001-05-04 | 2006-04-18 | Lam Research Corporation | Plasma cleaning of deposition chamber residues using duo-step wafer-less auto clean method |
JP4704605B2 (ja) * | 2001-05-23 | 2011-06-15 | 淳二 城戸 | 連続蒸着装置、蒸着装置及び蒸着方法 |
JP2004043910A (ja) * | 2002-07-12 | 2004-02-12 | Canon Inc | 堆積膜形成方法および形成装置 |
JP2004221313A (ja) * | 2003-01-15 | 2004-08-05 | Kawasaki Microelectronics Kk | 半導体製造工程の管理方法および半導体製造ラインの管理システム |
JP4372443B2 (ja) * | 2003-04-01 | 2009-11-25 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
JP4447279B2 (ja) * | 2003-10-15 | 2010-04-07 | キヤノンアネルバ株式会社 | 成膜装置 |
US7709814B2 (en) * | 2004-06-18 | 2010-05-04 | Axcelis Technologies, Inc. | Apparatus and process for treating dielectric materials |
JP2006086325A (ja) * | 2004-09-16 | 2006-03-30 | Tokyo Electron Ltd | クリーニングの終点検出方法 |
DE602007006147D1 (de) * | 2007-02-02 | 2010-06-10 | Applied Materials Inc | Prozesskammer, Inline-Beschichtungsanlage und Verfahren zur Behandlung eines Substrats |
DE102009018700B4 (de) * | 2008-09-01 | 2020-02-13 | Singulus Technologies Ag | Beschichtungsanlage und Verfahren zum Beschichten |
-
2009
- 2009-12-15 JP JP2009284468A patent/JP5431901B2/ja active Active
- 2009-12-18 SG SG200908476-5A patent/SG162699A1/en unknown
- 2009-12-22 US US12/644,995 patent/US8900363B2/en active Active
- 2009-12-25 CN CN 200910262659 patent/CN101768732B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8900363B2 (en) | 2014-12-02 |
JP5431901B2 (ja) | 2014-03-05 |
JP2010170652A (ja) | 2010-08-05 |
CN101768732A (zh) | 2010-07-07 |
CN101768732B (zh) | 2012-05-30 |
US20100166980A1 (en) | 2010-07-01 |
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