TW200741860A - Plasma processing apparatus, plasma processing method, focus ring, and focus ring component - Google Patents

Plasma processing apparatus, plasma processing method, focus ring, and focus ring component

Info

Publication number
TW200741860A
TW200741860A TW096109199A TW96109199A TW200741860A TW 200741860 A TW200741860 A TW 200741860A TW 096109199 A TW096109199 A TW 096109199A TW 96109199 A TW96109199 A TW 96109199A TW 200741860 A TW200741860 A TW 200741860A
Authority
TW
Taiwan
Prior art keywords
plasma processing
focus ring
processed
substrate
edge portion
Prior art date
Application number
TW096109199A
Other languages
Chinese (zh)
Other versions
TWI411034B (en
Inventor
Akira Koshiishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741860A publication Critical patent/TW200741860A/en
Application granted granted Critical
Publication of TWI411034B publication Critical patent/TWI411034B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Abstract

When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a lower surface of a peripheral edge portion of the substrate to be processed placed on the mounting table is formed under the peripheral edge portion of the substrate to be processed, and the ions consequently collide with the lower surface of the peripheral edge portion, which reduces the occurrence of deposition.
TW096109199A 2006-03-17 2007-03-16 A plasma processing apparatus and a method and a focusing ring TWI411034B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006074372A JP2007250967A (en) 2006-03-17 2006-03-17 Plasma treating apparatus and method, and focus ring

Publications (2)

Publication Number Publication Date
TW200741860A true TW200741860A (en) 2007-11-01
TWI411034B TWI411034B (en) 2013-10-01

Family

ID=38594919

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109199A TWI411034B (en) 2006-03-17 2007-03-16 A plasma processing apparatus and a method and a focusing ring

Country Status (4)

Country Link
JP (1) JP2007250967A (en)
KR (2) KR20070094522A (en)
CN (2) CN101038849B (en)
TW (1) TWI411034B (en)

Cited By (1)

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TWI496511B (en) * 2008-10-31 2015-08-11 Lam Res Corp Lower electrode assembly of plasma processing chamber

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JP2009187673A (en) * 2008-02-01 2009-08-20 Nec Electronics Corp Plasma treatment device and method
CN102017057B (en) * 2008-05-02 2012-11-28 欧瑞康太阳能股份公司(特吕巴赫) Plasma treatment apparatus and method for plasma-assisted treatment of substrates
JP2010045200A (en) * 2008-08-13 2010-02-25 Tokyo Electron Ltd Focus ring, and plasma processing apparatus and method
JP2010278166A (en) * 2009-05-27 2010-12-09 Tokyo Electron Ltd Annular component for plasma treatment, and plasma treatment device
JP5227264B2 (en) 2009-06-02 2013-07-03 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, program
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2013149634A (en) * 2010-05-11 2013-08-01 Sharp Corp Dry etching device
JP2013149635A (en) * 2010-05-11 2013-08-01 Sharp Corp Dry etching device
JP5690596B2 (en) 2011-01-07 2015-03-25 東京エレクトロン株式会社 Focus ring and substrate processing apparatus having the focus ring
JP2012169552A (en) * 2011-02-16 2012-09-06 Tokyo Electron Ltd Cooling mechanism, processing chamber, component in processing chamber, and cooling method
JP5741124B2 (en) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 Plasma processing equipment
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
CN105074869A (en) * 2013-06-26 2015-11-18 应用材料公司 Single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP5767373B2 (en) * 2014-07-29 2015-08-19 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, and storage medium for storing program for implementing the same
CN104715997A (en) * 2015-03-30 2015-06-17 上海华力微电子有限公司 Focusing ring and plasma processing device provided with same
JP6570971B2 (en) * 2015-05-27 2019-09-04 東京エレクトロン株式会社 Plasma processing apparatus and focus ring
KR102382823B1 (en) * 2015-09-04 2022-04-06 삼성전자주식회사 ring unit having air holes and substrate processing apparatus including the same
JP6607795B2 (en) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 Substrate processing equipment
JP6698502B2 (en) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 Mounting table and plasma processing device
KR102581226B1 (en) * 2016-12-23 2023-09-20 삼성전자주식회사 Plasma processing device
WO2018183245A1 (en) 2017-03-31 2018-10-04 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
KR102063108B1 (en) * 2017-10-30 2020-01-08 세메스 주식회사 Apparatus and method for treating substrate
JP7055040B2 (en) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 Placement device and processing device for the object to be processed
WO2019199822A2 (en) * 2018-04-10 2019-10-17 Applied Materials, Inc. Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition
JP6851706B2 (en) * 2018-05-30 2021-03-31 東芝三菱電機産業システム株式会社 Inert gas generator
JP2019220497A (en) * 2018-06-15 2019-12-26 東京エレクトロン株式会社 Mounting table and plasma processing device
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
JP7258562B2 (en) * 2019-01-11 2023-04-17 東京エレクトロン株式会社 Processing method and plasma processing apparatus
JP7278160B2 (en) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 Etching method and plasma processing apparatus
JP7278896B2 (en) * 2019-07-16 2023-05-22 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI496511B (en) * 2008-10-31 2015-08-11 Lam Res Corp Lower electrode assembly of plasma processing chamber

Also Published As

Publication number Publication date
CN101807509A (en) 2010-08-18
CN101038849A (en) 2007-09-19
KR20090026321A (en) 2009-03-12
TWI411034B (en) 2013-10-01
JP2007250967A (en) 2007-09-27
KR100959706B1 (en) 2010-05-25
CN101807509B (en) 2012-07-25
KR20070094522A (en) 2007-09-20
CN101038849B (en) 2010-05-26

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